TWI348699B - Non-volatile memory with background data latch caching during read operations and methods therefor - Google Patents

Non-volatile memory with background data latch caching during read operations and methods therefor

Info

Publication number
TWI348699B
TWI348699B TW096115918A TW96115918A TWI348699B TW I348699 B TWI348699 B TW I348699B TW 096115918 A TW096115918 A TW 096115918A TW 96115918 A TW96115918 A TW 96115918A TW I348699 B TWI348699 B TW I348699B
Authority
TW
Taiwan
Prior art keywords
read
data
memory
volatile memory
data latch
Prior art date
Application number
TW096115918A
Other languages
English (en)
Other versions
TW200811866A (en
Inventor
Yan Li
Original Assignee
Sandisk Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US11/381,997 external-priority patent/US7480181B2/en
Application filed by Sandisk Corp filed Critical Sandisk Corp
Publication of TW200811866A publication Critical patent/TW200811866A/zh
Application granted granted Critical
Publication of TWI348699B publication Critical patent/TWI348699B/zh

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F12/00—Accessing, addressing or allocating within memory systems or architectures
    • G06F12/02—Addressing or allocation; Relocation
    • G06F12/08—Addressing or allocation; Relocation in hierarchically structured memory systems, e.g. virtual memory systems
    • G06F12/0802—Addressing of a memory level in which the access to the desired data or data block requires associative addressing means, e.g. caches
    • G06F12/0893—Caches characterised by their organisation or structure
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/26—Sensing or reading circuits; Data output circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/22—Read-write [R-W] timing or clocking circuits; Read-write [R-W] control signal generators or management 
    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F2212/00—Indexing scheme relating to accessing, addressing or allocation within memory systems or architectures
    • G06F2212/20—Employing a main memory using a specific memory technology
    • G06F2212/202—Non-volatile memory
    • G06F2212/2022—Flash memory
    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F2212/00—Indexing scheme relating to accessing, addressing or allocation within memory systems or architectures
    • G06F2212/30—Providing cache or TLB in specific location of a processing system
    • G06F2212/304—In main memory subsystem
    • G06F2212/3042—In main memory subsystem being part of a memory device, e.g. cache DRAM
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2207/00—Indexing scheme relating to arrangements for writing information into, or reading information out from, a digital store
    • G11C2207/22—Control and timing of internal memory operations
    • G11C2207/2245—Memory devices with an internal cache buffer

Landscapes

  • Engineering & Computer Science (AREA)
  • Theoretical Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Read Only Memory (AREA)
  • Electrophonic Musical Instruments (AREA)
  • Lock And Its Accessories (AREA)
TW096115918A 2006-05-05 2007-05-04 Non-volatile memory with background data latch caching during read operations and methods therefor TWI348699B (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US11/381,994 US7447078B2 (en) 2005-04-01 2006-05-05 Method for non-volatile memory with background data latch caching during read operations
US11/381,997 US7480181B2 (en) 2005-04-01 2006-05-05 Non-volatile memory with background data latch caching during read operations

Publications (2)

Publication Number Publication Date
TW200811866A TW200811866A (en) 2008-03-01
TWI348699B true TWI348699B (en) 2011-09-11

Family

ID=40227503

Family Applications (1)

Application Number Title Priority Date Filing Date
TW096115918A TWI348699B (en) 2006-05-05 2007-05-04 Non-volatile memory with background data latch caching during read operations and methods therefor

Country Status (6)

Country Link
US (1) US7447078B2 (zh)
JP (1) JP4814995B2 (zh)
KR (1) KR101400999B1 (zh)
CN (1) CN101438353B (zh)
AT (1) ATE531048T1 (zh)
TW (1) TWI348699B (zh)

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JP2009536424A (ja) 2009-10-08
CN101438353B (zh) 2012-10-03
US20060221696A1 (en) 2006-10-05
TW200811866A (en) 2008-03-01
US7447078B2 (en) 2008-11-04
KR101400999B1 (ko) 2014-05-29
KR20090026748A (ko) 2009-03-13
JP4814995B2 (ja) 2011-11-16
CN101438353A (zh) 2009-05-20
ATE531048T1 (de) 2011-11-15

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