TWI346956B - Semiconductor memory device containing antifuse write voltage generation circuit - Google Patents

Semiconductor memory device containing antifuse write voltage generation circuit

Info

Publication number
TWI346956B
TWI346956B TW096127524A TW96127524A TWI346956B TW I346956 B TWI346956 B TW I346956B TW 096127524 A TW096127524 A TW 096127524A TW 96127524 A TW96127524 A TW 96127524A TW I346956 B TWI346956 B TW I346956B
Authority
TW
Taiwan
Prior art keywords
memory device
semiconductor memory
generation circuit
voltage generation
device containing
Prior art date
Application number
TW096127524A
Other languages
English (en)
Other versions
TW200814073A (en
Inventor
Hiroyoshi Tomita
Original Assignee
Fujitsu Semiconductor Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Semiconductor Ltd filed Critical Fujitsu Semiconductor Ltd
Publication of TW200814073A publication Critical patent/TW200814073A/zh
Application granted granted Critical
Publication of TWI346956B publication Critical patent/TWI346956B/zh

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
    • G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
    • G11C11/4074—Power supply or voltage generation circuits, e.g. bias voltage generators, substrate voltage generators, back-up power, power control circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C17/00—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards
    • G11C17/14—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards in which contents are determined by selectively establishing, breaking or modifying connecting links by permanently altering the state of coupling elements, e.g. PROM
    • G11C17/16—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards in which contents are determined by selectively establishing, breaking or modifying connecting links by permanently altering the state of coupling elements, e.g. PROM using electrically-fusible links
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/005—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor comprising combined but independently operative RAM-ROM, RAM-PROM, RAM-EPROM cells
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/406—Management or control of the refreshing or charge-regeneration cycles
    • G11C11/40615—Internal triggering or timing of refresh, e.g. hidden refresh, self refresh, pseudo-SRAMs
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C17/00—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards
    • G11C17/14—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards in which contents are determined by selectively establishing, breaking or modifying connecting links by permanently altering the state of coupling elements, e.g. PROM
    • G11C17/16—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards in which contents are determined by selectively establishing, breaking or modifying connecting links by permanently altering the state of coupling elements, e.g. PROM using electrically-fusible links
    • G11C17/165—Memory cells which are electrically programmed to cause a change in resistance, e.g. to permit multiple resistance steps to be programmed rather than conduct to or from non-conduct change of fuses and antifuses
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C17/00—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards
    • G11C17/14—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards in which contents are determined by selectively establishing, breaking or modifying connecting links by permanently altering the state of coupling elements, e.g. PROM
    • G11C17/18—Auxiliary circuits, e.g. for writing into memory
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/70—Masking faults in memories by using spares or by reconfiguring
    • G11C29/78—Masking faults in memories by using spares or by reconfiguring using programmable devices
    • G11C29/785—Masking faults in memories by using spares or by reconfiguring using programmable devices with redundancy programming schemes
    • G11C29/787—Masking faults in memories by using spares or by reconfiguring using programmable devices with redundancy programming schemes using a fuse hierarchy
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C5/00—Details of stores covered by group G11C11/00
    • G11C5/14—Power supply arrangements, e.g. power down, chip selection or deselection, layout of wirings or power grids, or multiple supply levels
    • G11C5/145—Applications of charge pumps; Boosted voltage circuits; Clamp circuits therefor
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C5/00—Details of stores covered by group G11C11/00
    • G11C5/14—Power supply arrangements, e.g. power down, chip selection or deselection, layout of wirings or power grids, or multiple supply levels
    • G11C5/147—Voltage reference generators, voltage or current regulators; Internally lowered supply levels; Compensation for voltage drops
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/406—Management or control of the refreshing or charge-regeneration cycles

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • For Increasing The Reliability Of Semiconductor Memories (AREA)
  • Dram (AREA)
  • Read Only Memory (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Design And Manufacture Of Integrated Circuits (AREA)
TW096127524A 2006-08-16 2007-07-27 Semiconductor memory device containing antifuse write voltage generation circuit TWI346956B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2006221774A JP4946260B2 (ja) 2006-08-16 2006-08-16 アンチヒューズ書込電圧発生回路を内蔵する半導体メモリ装置

Publications (2)

Publication Number Publication Date
TW200814073A TW200814073A (en) 2008-03-16
TWI346956B true TWI346956B (en) 2011-08-11

Family

ID=38640091

Family Applications (1)

Application Number Title Priority Date Filing Date
TW096127524A TWI346956B (en) 2006-08-16 2007-07-27 Semiconductor memory device containing antifuse write voltage generation circuit

Country Status (6)

Country Link
US (1) US7626881B2 (zh)
EP (1) EP1890295B1 (zh)
JP (1) JP4946260B2 (zh)
KR (1) KR20080015728A (zh)
CN (1) CN101127244B (zh)
TW (1) TWI346956B (zh)

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KR100940198B1 (ko) * 2008-05-26 2010-02-10 창원대학교 산학협력단 멀티비트 ｏｔｐ 셀
JP5571303B2 (ja) 2008-10-31 2014-08-13 ピーエスフォー ルクスコ エスエイアールエル 半導体装置
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US11144824B2 (en) * 2019-01-29 2021-10-12 Silicon Storage Technology, Inc. Algorithms and circuitry for verifying a value stored during a programming operation of a non-volatile memory cell in an analog neural memory in deep learning artificial neural network
CN110070903B (zh) * 2019-04-22 2021-04-13 北京时代民芯科技有限公司 一种先进的超低功耗的多晶电阻型熔丝电路及方法
US10790007B1 (en) 2019-11-22 2020-09-29 Winbond Electronics Corp. Memory device and method for assiting read operation
JP2021149996A (ja) * 2020-03-23 2021-09-27 株式会社東芝 半導体記憶装置、及び半導体記憶装置の制御方法
CN113470710B (zh) * 2020-03-31 2024-03-26 长鑫存储技术有限公司 半导体存储器
CN111798911B (zh) * 2020-07-10 2022-07-05 中国电子科技集团公司第二十四研究所 一种反熔丝存储器阵列的电压控制方法及电路
US11094388B1 (en) * 2020-07-20 2021-08-17 Winbond Electronics Corp. Anti-fuse device and program method using the same
JP2022138607A (ja) 2021-03-10 2022-09-26 キヤノン株式会社 基板、記録装置及び製造方法

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Also Published As

Publication number Publication date
EP1890295B1 (en) 2012-11-21
US7626881B2 (en) 2009-12-01
EP1890295A2 (en) 2008-02-20
EP1890295A3 (en) 2008-11-19
JP2008047215A (ja) 2008-02-28
CN101127244B (zh) 2010-09-22
JP4946260B2 (ja) 2012-06-06
KR20080015728A (ko) 2008-02-20
US20080043510A1 (en) 2008-02-21
CN101127244A (zh) 2008-02-20
TW200814073A (en) 2008-03-16

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