DE602007013326D1 - Elektrische Sicherungsschaltung, Speichervorrichtung und elektronisches Bauteil - Google Patents

Elektrische Sicherungsschaltung, Speichervorrichtung und elektronisches Bauteil

Info

Publication number
DE602007013326D1
DE602007013326D1 DE602007013326T DE602007013326T DE602007013326D1 DE 602007013326 D1 DE602007013326 D1 DE 602007013326D1 DE 602007013326 T DE602007013326 T DE 602007013326T DE 602007013326 T DE602007013326 T DE 602007013326T DE 602007013326 D1 DE602007013326 D1 DE 602007013326D1
Authority
DE
Germany
Prior art keywords
storage device
electronic component
fuse circuit
electrical fuse
electrical
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
DE602007013326T
Other languages
English (en)
Inventor
Shusaku Yamaguchi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Semiconductor Ltd
Original Assignee
Fujitsu Semiconductor Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Semiconductor Ltd filed Critical Fujitsu Semiconductor Ltd
Publication of DE602007013326D1 publication Critical patent/DE602007013326D1/de
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C17/00—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards
    • G11C17/14—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards in which contents are determined by selectively establishing, breaking or modifying connecting links by permanently altering the state of coupling elements, e.g. PROM
    • G11C17/16—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards in which contents are determined by selectively establishing, breaking or modifying connecting links by permanently altering the state of coupling elements, e.g. PROM using electrically-fusible links
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C17/00—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards
    • G11C17/14—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards in which contents are determined by selectively establishing, breaking or modifying connecting links by permanently altering the state of coupling elements, e.g. PROM
    • G11C17/18—Auxiliary circuits, e.g. for writing into memory
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/10—Input/output [I/O] data interface arrangements, e.g. I/O data control circuits, I/O data buffers
    • G11C7/1078—Data input circuits, e.g. write amplifiers, data input buffers, data input registers, data input level conversion circuits
    • G11C7/109—Control signal input circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/10—Input/output [I/O] data interface arrangements, e.g. I/O data control circuits, I/O data buffers
    • G11C7/1078—Data input circuits, e.g. write amplifiers, data input buffers, data input registers, data input level conversion circuits
    • G11C7/1096—Write circuits, e.g. I/O line write drivers
DE602007013326T 2006-08-18 2007-08-13 Elektrische Sicherungsschaltung, Speichervorrichtung und elektronisches Bauteil Active DE602007013326D1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2006223427A JP5082334B2 (ja) 2006-08-18 2006-08-18 電気ヒューズ回路、メモリ装置及び電子部品

Publications (1)

Publication Number Publication Date
DE602007013326D1 true DE602007013326D1 (de) 2011-05-05

Family

ID=38935943

Family Applications (1)

Application Number Title Priority Date Filing Date
DE602007013326T Active DE602007013326D1 (de) 2006-08-18 2007-08-13 Elektrische Sicherungsschaltung, Speichervorrichtung und elektronisches Bauteil

Country Status (6)

Country Link
US (1) US7688664B2 (de)
EP (1) EP1895544B1 (de)
JP (1) JP5082334B2 (de)
KR (1) KR20080016443A (de)
CN (1) CN101127245B (de)
DE (1) DE602007013326D1 (de)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7936582B1 (en) * 2008-03-19 2011-05-03 Xilinx, Inc. E-fuse read circuit with dual comparators
JP2009245511A (ja) * 2008-03-31 2009-10-22 Nec Electronics Corp 半導体記憶装置
KR101459786B1 (ko) * 2008-10-28 2014-11-10 삼성전자주식회사 카메라 렌즈 어셈블리 및 그의 자동 초점조절 방법
JP2010146636A (ja) * 2008-12-18 2010-07-01 Toshiba Corp 半導体集積回路装置及びメモリシステム
KR101562985B1 (ko) 2009-02-25 2015-10-23 삼성전자주식회사 반도체 장치 및 그것의 퓨즈 프로그램 방법
WO2010099622A1 (en) 2009-03-04 2010-09-10 Microbridge Technologies Inc. Passive resistive-heater addressing network
KR101204665B1 (ko) * 2010-03-31 2012-11-26 에스케이하이닉스 주식회사 퓨즈회로
US9362001B2 (en) * 2014-10-14 2016-06-07 Ememory Technology Inc. Memory cell capable of operating under low voltage conditions
KR20160148347A (ko) * 2015-06-16 2016-12-26 에스케이하이닉스 주식회사 셀프 리페어 장치 및 방법
CN107464585B (zh) 2016-06-06 2020-02-28 华邦电子股份有限公司 电子式熔丝装置以及电子式熔丝阵列

Family Cites Families (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5689455A (en) * 1995-08-31 1997-11-18 Micron Technology, Inc. Circuit for programming antifuse bits
KR0173946B1 (ko) 1995-12-18 1999-04-01 김광호 동기형 반도체 메모리 장치의 컬럼 리던던시 회로
KR100359855B1 (ko) 1998-06-30 2003-01-15 주식회사 하이닉스반도체 가변전압발생기를이용한앤티퓨즈의프로그래밍회로
JP2000123592A (ja) * 1998-10-19 2000-04-28 Mitsubishi Electric Corp 半導体装置
KR100687848B1 (ko) 1999-01-09 2007-02-27 주식회사 하이닉스반도체 앤티퓨즈의 프로그램/리드 장치를 갖는 리페어회로
US6346846B1 (en) * 1999-12-17 2002-02-12 International Business Machines Corporation Methods and apparatus for blowing and sensing antifuses
KR100317490B1 (ko) * 1999-12-29 2001-12-24 박종섭 안티퓨즈 회로
JP2002025292A (ja) * 2000-07-11 2002-01-25 Hitachi Ltd 半導体集積回路
JP2002134620A (ja) * 2000-10-27 2002-05-10 Mitsubishi Electric Corp 半導体装置
US6552960B2 (en) * 2001-06-04 2003-04-22 Kabushiki Kaisha Toshiba Semiconductor integrated circuit device
JP2003007081A (ja) * 2001-06-25 2003-01-10 Mitsubishi Electric Corp 半導体集積回路装置
US6751150B2 (en) * 2002-08-29 2004-06-15 Micron Technology, Inc. Circuits and method to protect a gate dielectric antifuse
JP4108519B2 (ja) * 2003-03-31 2008-06-25 エルピーダメモリ株式会社 制御回路、半導体記憶装置、及び制御方法
JP2005116048A (ja) * 2003-10-07 2005-04-28 Elpida Memory Inc アンチフューズプログラミング回路
JP4478980B2 (ja) * 2004-10-05 2010-06-09 エルピーダメモリ株式会社 ヒューズ回路及びそれを利用した半導体装置
JP2006147651A (ja) 2004-11-16 2006-06-08 Toshiba Corp 半導体集積回路
JP3923982B2 (ja) * 2005-01-12 2007-06-06 株式会社東芝 半導体集積回路
JP4614775B2 (ja) * 2005-01-14 2011-01-19 パナソニック株式会社 電気ヒューズ回路

Also Published As

Publication number Publication date
US20080043551A1 (en) 2008-02-21
CN101127245B (zh) 2012-11-07
EP1895544A1 (de) 2008-03-05
CN101127245A (zh) 2008-02-20
EP1895544B1 (de) 2011-03-23
KR20080016443A (ko) 2008-02-21
JP5082334B2 (ja) 2012-11-28
JP2008047247A (ja) 2008-02-28
US7688664B2 (en) 2010-03-30

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