TWI343605B - A method of base formation in a bicmos process - Google Patents

A method of base formation in a bicmos process Download PDF

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Publication number
TWI343605B
TWI343605B TW094110758A TW94110758A TWI343605B TW I343605 B TWI343605 B TW I343605B TW 094110758 A TW094110758 A TW 094110758A TW 94110758 A TW94110758 A TW 94110758A TW I343605 B TWI343605 B TW I343605B
Authority
TW
Taiwan
Prior art keywords
base
emitter
semiconductor region
heterogeneous
insulator
Prior art date
Application number
TW094110758A
Other languages
English (en)
Chinese (zh)
Other versions
TW200534401A (en
Inventor
Peter J Geiss
Alvin J Joseph
Qizhi Liu
Bradley A Orner
Original Assignee
Ibm
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ibm filed Critical Ibm
Publication of TW200534401A publication Critical patent/TW200534401A/zh
Application granted granted Critical
Publication of TWI343605B publication Critical patent/TWI343605B/zh

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/13—Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
    • H10D62/133—Emitter regions of BJTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D10/00—Bipolar junction transistors [BJT]
    • H10D10/01—Manufacture or treatment
    • H10D10/051—Manufacture or treatment of vertical BJTs
    • H10D10/054—Forming extrinsic base regions on silicon substrate after insulating device isolation in vertical BJTs having single crystalline emitter, collector or base regions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
    • H10D62/177—Base regions of bipolar transistors, e.g. BJTs or IGBTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/0107—Integrating at least one component covered by H10D12/00 or H10D30/00 with at least one component covered by H10D8/00, H10D10/00 or H10D18/00, e.g. integrating IGFETs with BJTs
    • H10D84/0109—Integrating at least one component covered by H10D12/00 or H10D30/00 with at least one component covered by H10D8/00, H10D10/00 or H10D18/00, e.g. integrating IGFETs with BJTs the at least one component covered by H10D12/00 or H10D30/00 being a MOS device
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/02—Manufacture or treatment characterised by using material-based technologies
    • H10D84/03—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology
    • H10D84/038—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology using silicon technology, e.g. SiGe
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/40—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00 with at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of IGFETs with BJTs
    • H10D84/401—Combinations of FETs or IGBTs with BJTs

Landscapes

  • Bipolar Transistors (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Bipolar Integrated Circuits (AREA)
TW094110758A 2004-04-14 2005-04-04 A method of base formation in a bicmos process TWI343605B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US10/709,113 US6911681B1 (en) 2004-04-14 2004-04-14 Method of base formation in a BiCMOS process

Publications (2)

Publication Number Publication Date
TW200534401A TW200534401A (en) 2005-10-16
TWI343605B true TWI343605B (en) 2011-06-11

Family

ID=34677064

Family Applications (1)

Application Number Title Priority Date Filing Date
TW094110758A TWI343605B (en) 2004-04-14 2005-04-04 A method of base formation in a bicmos process

Country Status (7)

Country Link
US (2) US6911681B1 (https=)
EP (1) EP1754253A4 (https=)
JP (1) JP5182797B2 (https=)
KR (2) KR20110049896A (https=)
CN (1) CN101076896B (https=)
TW (1) TWI343605B (https=)
WO (1) WO2005104680A2 (https=)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
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US6911681B1 (en) 2004-04-14 2005-06-28 International Business Machines Corporation Method of base formation in a BiCMOS process
US7709338B2 (en) * 2006-12-21 2010-05-04 International Business Machines Corporation BiCMOS devices with a self-aligned emitter and methods of fabricating such BiCMOS devices
DE102008010323A1 (de) * 2008-02-21 2009-09-10 Texas Instruments Deutschland Gmbh Verfahren zur Herstellung einer elektronischen Vorrichtung, die einen bipolaren PNP-Transistor umfasst
US20090250785A1 (en) * 2008-04-02 2009-10-08 Thomas Joseph Krutsick Methods of forming a shallow base region of a bipolar transistor
US8853796B2 (en) * 2011-05-19 2014-10-07 GLOBALFOUNDIERS Singapore Pte. Ltd. High-K metal gate device
US20120313146A1 (en) 2011-06-08 2012-12-13 International Business Machines Corporation Transistor and method of forming the transistor so as to have reduced base resistance
US8546230B2 (en) 2011-11-15 2013-10-01 International Business Machines Corporation Bipolar transistor with a collector having a protected outer edge portion for reduced based-collector junction capacitance and a method of forming the transistor
US8603883B2 (en) 2011-11-16 2013-12-10 International Business Machines Corporation Interface control in a bipolar junction transistor
US20130277804A1 (en) * 2012-04-20 2013-10-24 International Business Machines Corporation Bipolar junction transistors with reduced base-collector junction capacitance
US9887278B2 (en) 2015-09-28 2018-02-06 International Business Machines Corporation Semiconductor-on-insulator lateral heterojunction bipolar transistor having epitaxially grown intrinsic base and deposited extrinsic base
US11508354B2 (en) * 2020-05-04 2022-11-22 Rovi Guides, Inc. Method and apparatus for correcting failures in automated speech recognition systems
US11855196B2 (en) * 2021-10-25 2023-12-26 Globalfoundries Singapore Pte. Ltd. Transistor with wrap-around extrinsic base

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US4808548A (en) 1985-09-18 1989-02-28 Advanced Micro Devices, Inc. Method of making bipolar and MOS devices on same integrated circuit substrate
DE3886062T2 (de) * 1987-01-30 1994-05-19 Texas Instruments Inc Verfahren zum Herstellen integrierter Strukturen aus bipolaren und CMOS-Transistoren.
US5144403A (en) 1989-02-07 1992-09-01 Hewlett-Packard Company Bipolar transistor with trench-isolated emitter
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US5017990A (en) 1989-12-01 1991-05-21 International Business Machines Corporation Raised base bipolar transistor structure and its method of fabrication
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EP0709894B1 (en) 1994-10-28 2001-08-08 Consorzio per la Ricerca sulla Microelettronica nel Mezzogiorno High-frequency bipolar transistor structure, and related manufacturing process
US5541121A (en) 1995-01-30 1996-07-30 Texas Instruments Incorporated Reduced resistance base contact method for single polysilicon bipolar transistors using extrinsic base diffusion from a diffusion source dielectric layer
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US6492238B1 (en) 2001-06-22 2002-12-10 International Business Machines Corporation Bipolar transistor with raised extrinsic base fabricated in an integrated BiCMOS circuit
US6911681B1 (en) 2004-04-14 2005-06-28 International Business Machines Corporation Method of base formation in a BiCMOS process

Also Published As

Publication number Publication date
CN101076896B (zh) 2011-07-13
EP1754253A4 (en) 2008-10-22
WO2005104680A3 (en) 2007-07-05
KR20070003976A (ko) 2007-01-05
US6911681B1 (en) 2005-06-28
JP5182797B2 (ja) 2013-04-17
EP1754253A2 (en) 2007-02-21
CN101076896A (zh) 2007-11-21
TW200534401A (en) 2005-10-16
US7625792B2 (en) 2009-12-01
US20070207567A1 (en) 2007-09-06
WO2005104680A2 (en) 2005-11-10
KR20110049896A (ko) 2011-05-12
JP2007536724A (ja) 2007-12-13

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