CN101221982B - 异质结双极晶体管及其形成方法 - Google Patents
异质结双极晶体管及其形成方法 Download PDFInfo
- Publication number
- CN101221982B CN101221982B CN200810002829XA CN200810002829A CN101221982B CN 101221982 B CN101221982 B CN 101221982B CN 200810002829X A CN200810002829X A CN 200810002829XA CN 200810002829 A CN200810002829 A CN 200810002829A CN 101221982 B CN101221982 B CN 101221982B
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- CN
- China
- Prior art keywords
- metal
- bipolar transistor
- extrinsic base
- heterojunction bipolar
- emitter
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Links
- 238000000034 method Methods 0.000 title claims abstract description 30
- 229910052751 metal Inorganic materials 0.000 claims abstract description 97
- 239000002184 metal Substances 0.000 claims abstract description 97
- 239000004065 semiconductor Substances 0.000 claims abstract description 87
- 229910045601 alloy Inorganic materials 0.000 claims abstract description 38
- 239000000956 alloy Substances 0.000 claims abstract description 38
- 125000006850 spacer group Chemical group 0.000 claims abstract description 5
- 238000000407 epitaxy Methods 0.000 claims abstract 3
- 238000005530 etching Methods 0.000 claims description 29
- 229910021332 silicide Inorganic materials 0.000 claims description 24
- 239000012212 insulator Substances 0.000 claims description 22
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical group [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 claims description 22
- 238000002955 isolation Methods 0.000 claims description 14
- 238000001259 photo etching Methods 0.000 claims description 13
- 229910000577 Silicon-germanium Inorganic materials 0.000 claims description 9
- 230000015572 biosynthetic process Effects 0.000 claims description 5
- 229910019001 CoSi Inorganic materials 0.000 claims description 4
- 238000005498 polishing Methods 0.000 claims description 4
- 229910052759 nickel Inorganic materials 0.000 claims description 3
- 229910052697 platinum Inorganic materials 0.000 claims description 3
- 229910052721 tungsten Inorganic materials 0.000 claims description 3
- 238000007665 sagging Methods 0.000 claims description 2
- VLJQDHDVZJXNQL-UHFFFAOYSA-N 4-methyl-n-(oxomethylidene)benzenesulfonamide Chemical compound CC1=CC=C(S(=O)(=O)N=C=O)C=C1 VLJQDHDVZJXNQL-UHFFFAOYSA-N 0.000 claims 3
- 229910005883 NiSi Inorganic materials 0.000 claims 3
- 229910021340 platinum monosilicide Inorganic materials 0.000 claims 3
- 238000003475 lamination Methods 0.000 claims 2
- 230000000873 masking effect Effects 0.000 claims 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract description 11
- 229910052710 silicon Inorganic materials 0.000 abstract description 11
- 239000010703 silicon Substances 0.000 abstract description 11
- 238000012545 processing Methods 0.000 abstract description 9
- 229910001092 metal group alloy Inorganic materials 0.000 abstract 1
- 239000000463 material Substances 0.000 description 7
- 229910004298 SiO 2 Inorganic materials 0.000 description 6
- 238000005516 engineering process Methods 0.000 description 6
- 239000011435 rock Substances 0.000 description 6
- 239000013078 crystal Substances 0.000 description 4
- 238000000151 deposition Methods 0.000 description 4
- 238000004151 rapid thermal annealing Methods 0.000 description 4
- 238000006243 chemical reaction Methods 0.000 description 3
- 230000008021 deposition Effects 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 239000002019 doping agent Substances 0.000 description 3
- SCCCLDWUZODEKG-UHFFFAOYSA-N germanide Chemical compound [GeH3-] SCCCLDWUZODEKG-UHFFFAOYSA-N 0.000 description 3
- 239000000203 mixture Substances 0.000 description 3
- 230000004224 protection Effects 0.000 description 3
- 239000000758 substrate Substances 0.000 description 3
- 230000008719 thickening Effects 0.000 description 3
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 238000000137 annealing Methods 0.000 description 2
- 238000007630 basic procedure Methods 0.000 description 2
- 230000014509 gene expression Effects 0.000 description 2
- 238000011065 in-situ storage Methods 0.000 description 2
- 150000004767 nitrides Chemical class 0.000 description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 2
- 238000012797 qualification Methods 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- -1 tetramethyl oxyammonia Chemical compound 0.000 description 2
- 229910018565 CuAl Inorganic materials 0.000 description 1
- 239000004642 Polyimide Substances 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- XZWYZXLIPXDOLR-UHFFFAOYSA-N metformin Chemical compound CN(C)C(=N)NC(N)=N XZWYZXLIPXDOLR-UHFFFAOYSA-N 0.000 description 1
- 230000010355 oscillation Effects 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 230000003071 parasitic effect Effects 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- LENZDBCJOHFCAS-UHFFFAOYSA-N tris Chemical compound OCC(N)(CO)CO LENZDBCJOHFCAS-UHFFFAOYSA-N 0.000 description 1
- 238000009736 wetting Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
- H01L29/73—Bipolar junction transistors
- H01L29/737—Hetero-junction transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/1004—Base region of bipolar transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66234—Bipolar junction transistors [BJT]
- H01L29/66242—Heterojunction transistors [HBT]
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Bipolar Transistors (AREA)
- Electrodes Of Semiconductors (AREA)
Abstract
Description
Claims (20)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US11/621,864 US7952165B2 (en) | 2007-01-10 | 2007-01-10 | Heterojunction bipolar transistor (HBT) with self-aligned sub-lithographic metal-semiconductor alloy base contacts |
US11/621,864 | 2007-01-10 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN101221982A CN101221982A (zh) | 2008-07-16 |
CN101221982B true CN101221982B (zh) | 2010-12-01 |
Family
ID=39593502
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN200810002829XA Active CN101221982B (zh) | 2007-01-10 | 2008-01-09 | 异质结双极晶体管及其形成方法 |
Country Status (3)
Country | Link |
---|---|
US (1) | US7952165B2 (zh) |
CN (1) | CN101221982B (zh) |
TW (1) | TW200840043A (zh) |
Families Citing this family (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP2327089A1 (en) * | 2008-08-19 | 2011-06-01 | Nxp B.V. | Gringo heterojunction bipolar transistor with a metal extrinsic base region |
KR101026384B1 (ko) * | 2008-12-26 | 2011-04-07 | 주식회사 하이닉스반도체 | 반도체 소자의 배선을 절연시키는 방법 |
CN102386219B (zh) * | 2010-08-31 | 2013-07-24 | 上海华虹Nec电子有限公司 | SiGe HBT工艺中的寄生横向型PNP三极管及制造方法 |
US8501572B2 (en) * | 2010-09-02 | 2013-08-06 | Taiwan Semiconductor Manufacturing Company, Ltd. | Spacer structure for transistor device and method of manufacturing same |
CN102412280B (zh) * | 2010-09-21 | 2013-09-11 | 上海华虹Nec电子有限公司 | 锗硅hbt工艺中的横向型寄生pnp器件 |
CN102969349B (zh) * | 2011-09-01 | 2015-04-08 | 上海华虹宏力半导体制造有限公司 | 锗硅hbt工艺中的横向寄生型pnp器件及制造方法 |
US8975146B2 (en) | 2013-05-01 | 2015-03-10 | International Business Machines Corporation | Trench isolation structures and methods for bipolar junction transistors |
US20230197787A1 (en) * | 2021-12-22 | 2023-06-22 | Globalfoundries Singapore Pte. Ltd. | Bipolar transistors |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1630937A (zh) * | 2002-04-09 | 2005-06-22 | 马克西姆综合产品公司 | 具有凸起的非本征基极的自对准npn晶体管 |
CN1667834A (zh) * | 2004-03-13 | 2005-09-14 | 国际商业机器公司 | 在BiCMOS工艺中形成基极的方法 |
Family Cites Families (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100270965B1 (ko) * | 1998-11-07 | 2000-12-01 | 윤종용 | 고속 바이폴라 트랜지스터 및 그 제조방법 |
US6346453B1 (en) * | 2000-01-27 | 2002-02-12 | Sige Microsystems Inc. | Method of producing a SI-GE base heterojunction bipolar device |
US6489211B1 (en) * | 2000-03-01 | 2002-12-03 | Motorola, Inc. | Method of manufacturing a semiconductor component |
US6417058B1 (en) * | 2000-06-14 | 2002-07-09 | Sony Corporation | SiGe/poly for low resistance extrinsic base npn transistor |
US6492238B1 (en) * | 2001-06-22 | 2002-12-10 | International Business Machines Corporation | Bipolar transistor with raised extrinsic base fabricated in an integrated BiCMOS circuit |
US6861323B2 (en) * | 2003-02-21 | 2005-03-01 | Micrel, Inc. | Method for forming a SiGe heterojunction bipolar transistor having reduced base resistance |
US6864560B2 (en) * | 2003-03-28 | 2005-03-08 | International Business Machines Corporation | Bipolar transistor structure with a shallow isolation extension region providing reduced parasitic capacitance |
TW200620478A (en) * | 2004-08-20 | 2006-06-16 | Koninkl Philips Electronics Nv | Self-aligned epitaxially grown bipolar transistor |
US7390720B2 (en) * | 2006-10-05 | 2008-06-24 | International Business Machines Corporation | Local collector implant structure for heterojunction bipolar transistors and method of forming the same |
-
2007
- 2007-01-10 US US11/621,864 patent/US7952165B2/en not_active Expired - Fee Related
-
2008
- 2008-01-07 TW TW097100564A patent/TW200840043A/zh unknown
- 2008-01-09 CN CN200810002829XA patent/CN101221982B/zh active Active
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1630937A (zh) * | 2002-04-09 | 2005-06-22 | 马克西姆综合产品公司 | 具有凸起的非本征基极的自对准npn晶体管 |
CN1667834A (zh) * | 2004-03-13 | 2005-09-14 | 国际商业机器公司 | 在BiCMOS工艺中形成基极的方法 |
Also Published As
Publication number | Publication date |
---|---|
US20080164495A1 (en) | 2008-07-10 |
US7952165B2 (en) | 2011-05-31 |
CN101221982A (zh) | 2008-07-16 |
TW200840043A (en) | 2008-10-01 |
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C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
TR01 | Transfer of patent right | ||
TR01 | Transfer of patent right |
Effective date of registration: 20171123 Address after: Grand Cayman, Cayman Islands Patentee after: GLOBALFOUNDRIES INC. Address before: American New York Patentee before: Core USA second LLC Effective date of registration: 20171123 Address after: American New York Patentee after: Core USA second LLC Address before: American New York Patentee before: International Business Machines Corp. |