TWI333674B - - Google Patents
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- Publication number
- TWI333674B TWI333674B TW95149517A TW95149517A TWI333674B TW I333674 B TWI333674 B TW I333674B TW 95149517 A TW95149517 A TW 95149517A TW 95149517 A TW95149517 A TW 95149517A TW I333674 B TWI333674 B TW I333674B
- Authority
- TW
- Taiwan
- Prior art keywords
- oxide film
- gas
- wafer
- film
- partial pressure
- Prior art date
Links
- 238000012545 processing Methods 0.000 claims description 137
- 239000007789 gas Substances 0.000 claims description 120
- 238000005530 etching Methods 0.000 claims description 96
- 238000000034 method Methods 0.000 claims description 84
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 claims description 69
- 229910000040 hydrogen fluoride Inorganic materials 0.000 claims description 67
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 claims description 60
- 230000008569 process Effects 0.000 claims description 46
- BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 claims description 43
- 229910001936 tantalum oxide Inorganic materials 0.000 claims description 43
- 239000007795 chemical reaction product Substances 0.000 claims description 34
- 238000005229 chemical vapour deposition Methods 0.000 claims description 32
- 230000006866 deterioration Effects 0.000 claims description 15
- 238000005268 plasma chemical vapour deposition Methods 0.000 claims description 15
- 229910001925 ruthenium oxide Inorganic materials 0.000 claims description 15
- WOCIAKWEIIZHES-UHFFFAOYSA-N ruthenium(iv) oxide Chemical compound O=[Ru]=O WOCIAKWEIIZHES-UHFFFAOYSA-N 0.000 claims description 15
- 239000000758 substrate Substances 0.000 claims description 14
- 238000010438 heat treatment Methods 0.000 claims description 12
- 238000012986 modification Methods 0.000 claims description 6
- 230000004048 modification Effects 0.000 claims description 6
- 239000004576 sand Substances 0.000 claims description 2
- 239000005380 borophosphosilicate glass Substances 0.000 claims 1
- 238000007373 indentation Methods 0.000 claims 1
- 235000012431 wafers Nutrition 0.000 description 118
- 238000006243 chemical reaction Methods 0.000 description 36
- 239000010410 layer Substances 0.000 description 35
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 30
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 24
- 229910004298 SiO 2 Inorganic materials 0.000 description 22
- 230000007246 mechanism Effects 0.000 description 21
- 238000012546 transfer Methods 0.000 description 21
- 230000015572 biosynthetic process Effects 0.000 description 19
- 229910052786 argon Inorganic materials 0.000 description 15
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 14
- 229910052681 coesite Inorganic materials 0.000 description 12
- 229910052906 cristobalite Inorganic materials 0.000 description 12
- 238000002474 experimental method Methods 0.000 description 12
- 229910052682 stishovite Inorganic materials 0.000 description 12
- 229910052905 tridymite Inorganic materials 0.000 description 12
- 229910001873 dinitrogen Inorganic materials 0.000 description 11
- 239000000126 substance Substances 0.000 description 11
- 229910021529 ammonia Inorganic materials 0.000 description 10
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical class [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 8
- 230000032258 transport Effects 0.000 description 8
- 229920006395 saturated elastomer Polymers 0.000 description 7
- 238000001312 dry etching Methods 0.000 description 6
- 239000011261 inert gas Substances 0.000 description 6
- 229910052757 nitrogen Inorganic materials 0.000 description 6
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 6
- 239000003990 capacitor Substances 0.000 description 5
- 230000003247 decreasing effect Effects 0.000 description 5
- 230000003647 oxidation Effects 0.000 description 5
- 238000007254 oxidation reaction Methods 0.000 description 5
- 239000000047 product Substances 0.000 description 5
- 239000011229 interlayer Substances 0.000 description 4
- 239000007788 liquid Substances 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 4
- -1 ammonia fluoroantimonate Chemical compound 0.000 description 3
- 239000001307 helium Substances 0.000 description 3
- 229910052734 helium Inorganic materials 0.000 description 3
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 3
- 150000002431 hydrogen Chemical class 0.000 description 3
- 239000012212 insulator Substances 0.000 description 3
- 229910000069 nitrogen hydride Inorganic materials 0.000 description 3
- 238000001020 plasma etching Methods 0.000 description 3
- 239000000377 silicon dioxide Substances 0.000 description 3
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 2
- 229910052770 Uranium Inorganic materials 0.000 description 2
- 230000001276 controlling effect Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 229910052731 fluorine Inorganic materials 0.000 description 2
- 239000011737 fluorine Substances 0.000 description 2
- 239000001257 hydrogen Substances 0.000 description 2
- 229910052739 hydrogen Inorganic materials 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 229920002120 photoresistant polymer Polymers 0.000 description 2
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 2
- 230000001105 regulatory effect Effects 0.000 description 2
- 238000000859 sublimation Methods 0.000 description 2
- 230000008022 sublimation Effects 0.000 description 2
- 238000002230 thermal chemical vapour deposition Methods 0.000 description 2
- 230000007723 transport mechanism Effects 0.000 description 2
- JFALSRSLKYAFGM-UHFFFAOYSA-N uranium(0) Chemical compound [U] JFALSRSLKYAFGM-UHFFFAOYSA-N 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- 238000001039 wet etching Methods 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- HDDMREWZGLZQMX-UHFFFAOYSA-N azanium;carbonofluoridate Chemical compound [NH4+].[O-]C(F)=O HDDMREWZGLZQMX-UHFFFAOYSA-N 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 229910000420 cerium oxide Inorganic materials 0.000 description 1
- 238000003889 chemical engineering Methods 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000000593 degrading effect Effects 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 238000007599 discharging Methods 0.000 description 1
- 239000003814 drug Substances 0.000 description 1
- 235000013399 edible fruits Nutrition 0.000 description 1
- 210000003746 feather Anatomy 0.000 description 1
- 230000006870 function Effects 0.000 description 1
- 238000002309 gasification Methods 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 229910052736 halogen Inorganic materials 0.000 description 1
- 150000002367 halogens Chemical class 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 238000010327 methods by industry Methods 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- BMMGVYCKOGBVEV-UHFFFAOYSA-N oxo(oxoceriooxy)cerium Chemical compound [Ce]=O.O=[Ce]=O BMMGVYCKOGBVEV-UHFFFAOYSA-N 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 239000005360 phosphosilicate glass Substances 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 238000002203 pretreatment Methods 0.000 description 1
- 238000003672 processing method Methods 0.000 description 1
- 230000036632 reaction speed Effects 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 150000003839 salts Chemical class 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 description 1
- 238000005496 tempering Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
- H01L21/31105—Etching inorganic layers
- H01L21/31111—Etching inorganic layers by chemical means
- H01L21/31116—Etching inorganic layers by chemical means by dry-etching
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Inorganic Chemistry (AREA)
- Physics & Mathematics (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Drying Of Semiconductors (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2005379494A JP4890025B2 (ja) | 2005-12-28 | 2005-12-28 | エッチング方法及び記録媒体 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW200739711A TW200739711A (en) | 2007-10-16 |
| TWI333674B true TWI333674B (enrdf_load_stackoverflow) | 2010-11-21 |
Family
ID=38217915
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW095149517A TW200739711A (en) | 2005-12-28 | 2006-12-28 | Etching method and recording medium |
Country Status (3)
| Country | Link |
|---|---|
| JP (1) | JP4890025B2 (enrdf_load_stackoverflow) |
| TW (1) | TW200739711A (enrdf_load_stackoverflow) |
| WO (1) | WO2007074695A1 (enrdf_load_stackoverflow) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US11762293B2 (en) | 2021-05-11 | 2023-09-19 | United Microelectronics Corp. | Fabricating method of reducing photoresist footing |
Families Citing this family (18)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2009094307A (ja) * | 2007-10-10 | 2009-04-30 | Tokyo Electron Ltd | エッチング方法及び記録媒体 |
| JP5374039B2 (ja) * | 2007-12-27 | 2013-12-25 | 東京エレクトロン株式会社 | 基板処理方法、基板処理装置及び記憶媒体 |
| JP5344824B2 (ja) * | 2008-01-31 | 2013-11-20 | 東京エレクトロン株式会社 | レジストパターンの形成方法および記録媒体 |
| JP4553049B2 (ja) | 2008-02-29 | 2010-09-29 | エルピーダメモリ株式会社 | 半導体装置の製造方法 |
| KR100870914B1 (ko) | 2008-06-03 | 2008-11-28 | 주식회사 테스 | 실리콘 산화막의 건식 식각 방법 |
| KR101146118B1 (ko) * | 2008-12-09 | 2012-05-16 | 주식회사 테스 | 실리콘 산화막의 건식 식각 방법 |
| JP4968861B2 (ja) | 2009-03-19 | 2012-07-04 | 東京エレクトロン株式会社 | 基板のエッチング方法及びシステム |
| JP6161972B2 (ja) | 2013-06-25 | 2017-07-12 | 東京エレクトロン株式会社 | エッチング方法及び記録媒体 |
| JP2015056519A (ja) | 2013-09-12 | 2015-03-23 | 東京エレクトロン株式会社 | エッチング方法、エッチング装置及び記憶媒体 |
| JP6405958B2 (ja) * | 2013-12-26 | 2018-10-17 | 東京エレクトロン株式会社 | エッチング方法、記憶媒体及びエッチング装置 |
| KR101874822B1 (ko) * | 2016-04-01 | 2018-07-06 | 주식회사 테스 | 실리콘산화막의 선택적 식각 방법 |
| JP6692202B2 (ja) * | 2016-04-08 | 2020-05-13 | 東京エレクトロン株式会社 | 基板処理方法及び基板処理装置 |
| JP6812284B2 (ja) | 2017-03-28 | 2021-01-13 | 東京エレクトロン株式会社 | エッチング方法及び記録媒体 |
| JP2020043180A (ja) | 2018-09-07 | 2020-03-19 | 東京エレクトロン株式会社 | 基板処理装置及び基板処理方法 |
| TWI881595B (zh) | 2018-09-13 | 2025-04-21 | 日商中央硝子股份有限公司 | 矽氧化物之蝕刻方法及蝕刻裝置 |
| JP7606109B2 (ja) | 2020-03-13 | 2024-12-25 | セントラル硝子株式会社 | ドライエッチング方法、半導体デバイスの製造方法及びドライエッチングガス組成物 |
| KR102837958B1 (ko) | 2021-10-27 | 2025-07-25 | 도쿄엘렉트론가부시키가이샤 | 성막 방법 및 성막 시스템 |
| JP2023087228A (ja) | 2021-12-13 | 2023-06-23 | 東京エレクトロン株式会社 | ガス処理方法およびガス処理装置 |
Family Cites Families (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5282925A (en) * | 1992-11-09 | 1994-02-01 | International Business Machines Corporation | Device and method for accurate etching and removal of thin film |
| US6858532B2 (en) * | 2002-12-10 | 2005-02-22 | International Business Machines Corporation | Low defect pre-emitter and pre-base oxide etch for bipolar transistors and related tooling |
| US7029536B2 (en) * | 2003-03-17 | 2006-04-18 | Tokyo Electron Limited | Processing system and method for treating a substrate |
| WO2004084281A1 (ja) * | 2003-03-17 | 2004-09-30 | Nikon Corporation | 投影光学系、露光装置、および露光方法 |
| JP4039385B2 (ja) * | 2003-04-22 | 2008-01-30 | 東京エレクトロン株式会社 | ケミカル酸化膜の除去方法 |
| JP4833512B2 (ja) * | 2003-06-24 | 2011-12-07 | 東京エレクトロン株式会社 | 被処理体処理装置、被処理体処理方法及び被処理体搬送方法 |
| JP4495470B2 (ja) * | 2004-01-13 | 2010-07-07 | 三星電子株式会社 | エッチング方法 |
-
2005
- 2005-12-28 JP JP2005379494A patent/JP4890025B2/ja active Active
-
2006
- 2006-12-20 WO PCT/JP2006/325369 patent/WO2007074695A1/ja active Application Filing
- 2006-12-28 TW TW095149517A patent/TW200739711A/zh unknown
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US11762293B2 (en) | 2021-05-11 | 2023-09-19 | United Microelectronics Corp. | Fabricating method of reducing photoresist footing |
Also Published As
| Publication number | Publication date |
|---|---|
| JP4890025B2 (ja) | 2012-03-07 |
| WO2007074695A1 (ja) | 2007-07-05 |
| JP2007180418A (ja) | 2007-07-12 |
| TW200739711A (en) | 2007-10-16 |
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