TW200739711A - Etching method and recording medium - Google Patents
Etching method and recording mediumInfo
- Publication number
- TW200739711A TW200739711A TW095149517A TW95149517A TW200739711A TW 200739711 A TW200739711 A TW 200739711A TW 095149517 A TW095149517 A TW 095149517A TW 95149517 A TW95149517 A TW 95149517A TW 200739711 A TW200739711 A TW 200739711A
- Authority
- TW
- Taiwan
- Prior art keywords
- silicon oxide
- oxide film
- etching method
- reaction product
- gas
- Prior art date
Links
- 238000005530 etching Methods 0.000 title abstract 3
- 238000000034 method Methods 0.000 title abstract 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 7
- 229910052814 silicon oxide Inorganic materials 0.000 abstract 7
- 239000007789 gas Substances 0.000 abstract 4
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 abstract 3
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 abstract 2
- 230000004075 alteration Effects 0.000 abstract 2
- 239000007795 chemical reaction product Substances 0.000 abstract 2
- 238000010438 heat treatment Methods 0.000 abstract 2
- 229910000040 hydrogen fluoride Inorganic materials 0.000 abstract 2
- 229910000069 nitrogen hydride Inorganic materials 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
- H01L21/31105—Etching inorganic layers
- H01L21/31111—Etching inorganic layers by chemical means
- H01L21/31116—Etching inorganic layers by chemical means by dry-etching
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Inorganic Chemistry (AREA)
- Physics & Mathematics (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Drying Of Semiconductors (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2005379494A JP4890025B2 (ja) | 2005-12-28 | 2005-12-28 | エッチング方法及び記録媒体 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW200739711A true TW200739711A (en) | 2007-10-16 |
| TWI333674B TWI333674B (enrdf_load_stackoverflow) | 2010-11-21 |
Family
ID=38217915
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW095149517A TW200739711A (en) | 2005-12-28 | 2006-12-28 | Etching method and recording medium |
Country Status (3)
| Country | Link |
|---|---|
| JP (1) | JP4890025B2 (enrdf_load_stackoverflow) |
| TW (1) | TW200739711A (enrdf_load_stackoverflow) |
| WO (1) | WO2007074695A1 (enrdf_load_stackoverflow) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI727023B (zh) * | 2016-04-08 | 2021-05-11 | 日商東京威力科創股份有限公司 | 基板處理方法及基板處理裝置 |
Families Citing this family (18)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2009094307A (ja) * | 2007-10-10 | 2009-04-30 | Tokyo Electron Ltd | エッチング方法及び記録媒体 |
| JP5374039B2 (ja) * | 2007-12-27 | 2013-12-25 | 東京エレクトロン株式会社 | 基板処理方法、基板処理装置及び記憶媒体 |
| JP5344824B2 (ja) * | 2008-01-31 | 2013-11-20 | 東京エレクトロン株式会社 | レジストパターンの形成方法および記録媒体 |
| JP4553049B2 (ja) | 2008-02-29 | 2010-09-29 | エルピーダメモリ株式会社 | 半導体装置の製造方法 |
| KR100870914B1 (ko) | 2008-06-03 | 2008-11-28 | 주식회사 테스 | 실리콘 산화막의 건식 식각 방법 |
| KR101146118B1 (ko) * | 2008-12-09 | 2012-05-16 | 주식회사 테스 | 실리콘 산화막의 건식 식각 방법 |
| JP4968861B2 (ja) | 2009-03-19 | 2012-07-04 | 東京エレクトロン株式会社 | 基板のエッチング方法及びシステム |
| JP6161972B2 (ja) | 2013-06-25 | 2017-07-12 | 東京エレクトロン株式会社 | エッチング方法及び記録媒体 |
| JP2015056519A (ja) | 2013-09-12 | 2015-03-23 | 東京エレクトロン株式会社 | エッチング方法、エッチング装置及び記憶媒体 |
| JP6405958B2 (ja) * | 2013-12-26 | 2018-10-17 | 東京エレクトロン株式会社 | エッチング方法、記憶媒体及びエッチング装置 |
| KR101874822B1 (ko) * | 2016-04-01 | 2018-07-06 | 주식회사 테스 | 실리콘산화막의 선택적 식각 방법 |
| JP6812284B2 (ja) | 2017-03-28 | 2021-01-13 | 東京エレクトロン株式会社 | エッチング方法及び記録媒体 |
| JP2020043180A (ja) | 2018-09-07 | 2020-03-19 | 東京エレクトロン株式会社 | 基板処理装置及び基板処理方法 |
| TWI881595B (zh) | 2018-09-13 | 2025-04-21 | 日商中央硝子股份有限公司 | 矽氧化物之蝕刻方法及蝕刻裝置 |
| JP7606109B2 (ja) | 2020-03-13 | 2024-12-25 | セントラル硝子株式会社 | ドライエッチング方法、半導体デバイスの製造方法及びドライエッチングガス組成物 |
| US11762293B2 (en) | 2021-05-11 | 2023-09-19 | United Microelectronics Corp. | Fabricating method of reducing photoresist footing |
| KR102837958B1 (ko) | 2021-10-27 | 2025-07-25 | 도쿄엘렉트론가부시키가이샤 | 성막 방법 및 성막 시스템 |
| JP2023087228A (ja) | 2021-12-13 | 2023-06-23 | 東京エレクトロン株式会社 | ガス処理方法およびガス処理装置 |
Family Cites Families (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5282925A (en) * | 1992-11-09 | 1994-02-01 | International Business Machines Corporation | Device and method for accurate etching and removal of thin film |
| US6858532B2 (en) * | 2002-12-10 | 2005-02-22 | International Business Machines Corporation | Low defect pre-emitter and pre-base oxide etch for bipolar transistors and related tooling |
| US7029536B2 (en) * | 2003-03-17 | 2006-04-18 | Tokyo Electron Limited | Processing system and method for treating a substrate |
| WO2004084281A1 (ja) * | 2003-03-17 | 2004-09-30 | Nikon Corporation | 投影光学系、露光装置、および露光方法 |
| JP4039385B2 (ja) * | 2003-04-22 | 2008-01-30 | 東京エレクトロン株式会社 | ケミカル酸化膜の除去方法 |
| JP4833512B2 (ja) * | 2003-06-24 | 2011-12-07 | 東京エレクトロン株式会社 | 被処理体処理装置、被処理体処理方法及び被処理体搬送方法 |
| JP4495470B2 (ja) * | 2004-01-13 | 2010-07-07 | 三星電子株式会社 | エッチング方法 |
-
2005
- 2005-12-28 JP JP2005379494A patent/JP4890025B2/ja active Active
-
2006
- 2006-12-20 WO PCT/JP2006/325369 patent/WO2007074695A1/ja active Application Filing
- 2006-12-28 TW TW095149517A patent/TW200739711A/zh unknown
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI727023B (zh) * | 2016-04-08 | 2021-05-11 | 日商東京威力科創股份有限公司 | 基板處理方法及基板處理裝置 |
Also Published As
| Publication number | Publication date |
|---|---|
| JP4890025B2 (ja) | 2012-03-07 |
| WO2007074695A1 (ja) | 2007-07-05 |
| TWI333674B (enrdf_load_stackoverflow) | 2010-11-21 |
| JP2007180418A (ja) | 2007-07-12 |
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