WO2014208365A3 - エッチング方法及び記録媒体 - Google Patents
エッチング方法及び記録媒体 Download PDFInfo
- Publication number
- WO2014208365A3 WO2014208365A3 PCT/JP2014/065736 JP2014065736W WO2014208365A3 WO 2014208365 A3 WO2014208365 A3 WO 2014208365A3 JP 2014065736 W JP2014065736 W JP 2014065736W WO 2014208365 A3 WO2014208365 A3 WO 2014208365A3
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- oxide film
- silicon oxide
- etching method
- gas
- recording medium
- Prior art date
Links
- 238000005530 etching Methods 0.000 title abstract 2
- 238000000034 method Methods 0.000 title abstract 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 4
- 229910052814 silicon oxide Inorganic materials 0.000 abstract 4
- 230000001131 transforming effect Effects 0.000 abstract 3
- 239000007795 chemical reaction product Substances 0.000 abstract 2
- 229910052736 halogen Inorganic materials 0.000 abstract 2
- 150000002367 halogens Chemical class 0.000 abstract 2
- 238000010438 heat treatment Methods 0.000 abstract 1
- 230000009466 transformation Effects 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
- H01L21/31105—Etching inorganic layers
- H01L21/31111—Etching inorganic layers by chemical means
- H01L21/31116—Etching inorganic layers by chemical means by dry-etching
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Inorganic Chemistry (AREA)
- Drying Of Semiconductors (AREA)
Abstract
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020157035913A KR101725711B1 (ko) | 2013-06-25 | 2014-06-13 | 에칭 방법 및 기록 매체 |
US14/900,877 US9466507B2 (en) | 2013-06-25 | 2014-06-13 | Etching method, and recording medium |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2013132530A JP6161972B2 (ja) | 2013-06-25 | 2013-06-25 | エッチング方法及び記録媒体 |
JP2013-132530 | 2013-06-25 |
Publications (2)
Publication Number | Publication Date |
---|---|
WO2014208365A2 WO2014208365A2 (ja) | 2014-12-31 |
WO2014208365A3 true WO2014208365A3 (ja) | 2015-03-05 |
Family
ID=52142786
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/JP2014/065736 WO2014208365A2 (ja) | 2013-06-25 | 2014-06-13 | エッチング方法及び記録媒体 |
Country Status (5)
Country | Link |
---|---|
US (1) | US9466507B2 (ja) |
JP (1) | JP6161972B2 (ja) |
KR (1) | KR101725711B1 (ja) |
TW (1) | TWI620245B (ja) |
WO (1) | WO2014208365A2 (ja) |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN108701612B (zh) * | 2016-02-01 | 2023-05-16 | 东京毅力科创株式会社 | 确定干法蚀刻工艺的后热处理的工艺完成的系统和方法 |
JP6692202B2 (ja) * | 2016-04-08 | 2020-05-13 | 東京エレクトロン株式会社 | 基板処理方法及び基板処理装置 |
JP6812284B2 (ja) * | 2017-03-28 | 2021-01-13 | 東京エレクトロン株式会社 | エッチング方法及び記録媒体 |
JP7113681B2 (ja) * | 2018-06-28 | 2022-08-05 | 株式会社日立ハイテク | エッチング処理方法およびエッチング処理装置 |
JP7398493B2 (ja) * | 2022-03-18 | 2023-12-14 | 株式会社Kokusai Electric | 基板処理方法、半導体装置の製造方法、プログラム、および基板処理装置 |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2010245512A (ja) * | 2009-03-19 | 2010-10-28 | Tokyo Electron Ltd | 基板のエッチング方法及びシステム |
WO2012063901A1 (ja) * | 2010-11-11 | 2012-05-18 | 東京エレクトロン株式会社 | 半導体装置の製造方法および製造装置 |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20000046774A (ko) * | 1998-12-31 | 2000-07-25 | 메리 이. 보울러 | 내화학성이 향상된 아크릴계 마블칩의 제조방법 |
JP4890025B2 (ja) | 2005-12-28 | 2012-03-07 | 東京エレクトロン株式会社 | エッチング方法及び記録媒体 |
JP4913485B2 (ja) * | 2006-06-29 | 2012-04-11 | 東京エレクトロン株式会社 | エッチング方法及び記録媒体 |
JP2009094307A (ja) | 2007-10-10 | 2009-04-30 | Tokyo Electron Ltd | エッチング方法及び記録媒体 |
JP5544343B2 (ja) * | 2010-10-29 | 2014-07-09 | 東京エレクトロン株式会社 | 成膜装置 |
-
2013
- 2013-06-25 JP JP2013132530A patent/JP6161972B2/ja active Active
-
2014
- 2014-06-13 US US14/900,877 patent/US9466507B2/en active Active
- 2014-06-13 KR KR1020157035913A patent/KR101725711B1/ko active IP Right Grant
- 2014-06-13 WO PCT/JP2014/065736 patent/WO2014208365A2/ja active Application Filing
- 2014-06-23 TW TW103121542A patent/TWI620245B/zh active
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2010245512A (ja) * | 2009-03-19 | 2010-10-28 | Tokyo Electron Ltd | 基板のエッチング方法及びシステム |
WO2012063901A1 (ja) * | 2010-11-11 | 2012-05-18 | 東京エレクトロン株式会社 | 半導体装置の製造方法および製造装置 |
Also Published As
Publication number | Publication date |
---|---|
KR20160022826A (ko) | 2016-03-02 |
KR101725711B1 (ko) | 2017-04-10 |
JP2015008199A (ja) | 2015-01-15 |
WO2014208365A2 (ja) | 2014-12-31 |
JP6161972B2 (ja) | 2017-07-12 |
TWI620245B (zh) | 2018-04-01 |
US20160163562A1 (en) | 2016-06-09 |
US9466507B2 (en) | 2016-10-11 |
TW201517161A (zh) | 2015-05-01 |
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