JP4890025B2 - エッチング方法及び記録媒体 - Google Patents

エッチング方法及び記録媒体 Download PDF

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Publication number
JP4890025B2
JP4890025B2 JP2005379494A JP2005379494A JP4890025B2 JP 4890025 B2 JP4890025 B2 JP 4890025B2 JP 2005379494 A JP2005379494 A JP 2005379494A JP 2005379494 A JP2005379494 A JP 2005379494A JP 4890025 B2 JP4890025 B2 JP 4890025B2
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Japan
Prior art keywords
gas
wafer
film
oxide film
hydrogen fluoride
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JP2005379494A
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English (en)
Japanese (ja)
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JP2007180418A (ja
JP2007180418A5 (enrdf_load_stackoverflow
Inventor
茂樹 戸澤
雄介 村木
正 飯野
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Tokyo Electron Ltd
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Tokyo Electron Ltd
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Priority to JP2005379494A priority Critical patent/JP4890025B2/ja
Priority to PCT/JP2006/325369 priority patent/WO2007074695A1/ja
Priority to TW095149517A priority patent/TW200739711A/zh
Publication of JP2007180418A publication Critical patent/JP2007180418A/ja
Publication of JP2007180418A5 publication Critical patent/JP2007180418A5/ja
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Publication of JP4890025B2 publication Critical patent/JP4890025B2/ja
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/311—Etching the insulating layers by chemical or physical means
    • H01L21/31105—Etching inorganic layers
    • H01L21/31111—Etching inorganic layers by chemical means
    • H01L21/31116—Etching inorganic layers by chemical means by dry-etching

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  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Inorganic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Drying Of Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
JP2005379494A 2005-12-28 2005-12-28 エッチング方法及び記録媒体 Active JP4890025B2 (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2005379494A JP4890025B2 (ja) 2005-12-28 2005-12-28 エッチング方法及び記録媒体
PCT/JP2006/325369 WO2007074695A1 (ja) 2005-12-28 2006-12-20 エッチング方法及び記録媒体
TW095149517A TW200739711A (en) 2005-12-28 2006-12-28 Etching method and recording medium

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2005379494A JP4890025B2 (ja) 2005-12-28 2005-12-28 エッチング方法及び記録媒体

Publications (3)

Publication Number Publication Date
JP2007180418A JP2007180418A (ja) 2007-07-12
JP2007180418A5 JP2007180418A5 (enrdf_load_stackoverflow) 2009-02-19
JP4890025B2 true JP4890025B2 (ja) 2012-03-07

Family

ID=38217915

Family Applications (1)

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JP2005379494A Active JP4890025B2 (ja) 2005-12-28 2005-12-28 エッチング方法及び記録媒体

Country Status (3)

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JP (1) JP4890025B2 (enrdf_load_stackoverflow)
TW (1) TW200739711A (enrdf_load_stackoverflow)
WO (1) WO2007074695A1 (enrdf_load_stackoverflow)

Families Citing this family (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009094307A (ja) * 2007-10-10 2009-04-30 Tokyo Electron Ltd エッチング方法及び記録媒体
JP5374039B2 (ja) * 2007-12-27 2013-12-25 東京エレクトロン株式会社 基板処理方法、基板処理装置及び記憶媒体
JP5344824B2 (ja) * 2008-01-31 2013-11-20 東京エレクトロン株式会社 レジストパターンの形成方法および記録媒体
JP4553049B2 (ja) 2008-02-29 2010-09-29 エルピーダメモリ株式会社 半導体装置の製造方法
KR100870914B1 (ko) 2008-06-03 2008-11-28 주식회사 테스 실리콘 산화막의 건식 식각 방법
KR101146118B1 (ko) * 2008-12-09 2012-05-16 주식회사 테스 실리콘 산화막의 건식 식각 방법
JP4968861B2 (ja) 2009-03-19 2012-07-04 東京エレクトロン株式会社 基板のエッチング方法及びシステム
JP6161972B2 (ja) 2013-06-25 2017-07-12 東京エレクトロン株式会社 エッチング方法及び記録媒体
JP2015056519A (ja) 2013-09-12 2015-03-23 東京エレクトロン株式会社 エッチング方法、エッチング装置及び記憶媒体
JP6405958B2 (ja) * 2013-12-26 2018-10-17 東京エレクトロン株式会社 エッチング方法、記憶媒体及びエッチング装置
KR101874822B1 (ko) * 2016-04-01 2018-07-06 주식회사 테스 실리콘산화막의 선택적 식각 방법
JP6692202B2 (ja) * 2016-04-08 2020-05-13 東京エレクトロン株式会社 基板処理方法及び基板処理装置
JP6812284B2 (ja) 2017-03-28 2021-01-13 東京エレクトロン株式会社 エッチング方法及び記録媒体
JP2020043180A (ja) 2018-09-07 2020-03-19 東京エレクトロン株式会社 基板処理装置及び基板処理方法
TWI881595B (zh) 2018-09-13 2025-04-21 日商中央硝子股份有限公司 矽氧化物之蝕刻方法及蝕刻裝置
JP7606109B2 (ja) 2020-03-13 2024-12-25 セントラル硝子株式会社 ドライエッチング方法、半導体デバイスの製造方法及びドライエッチングガス組成物
US11762293B2 (en) 2021-05-11 2023-09-19 United Microelectronics Corp. Fabricating method of reducing photoresist footing
KR102837958B1 (ko) 2021-10-27 2025-07-25 도쿄엘렉트론가부시키가이샤 성막 방법 및 성막 시스템
JP2023087228A (ja) 2021-12-13 2023-06-23 東京エレクトロン株式会社 ガス処理方法およびガス処理装置

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5282925A (en) * 1992-11-09 1994-02-01 International Business Machines Corporation Device and method for accurate etching and removal of thin film
US6858532B2 (en) * 2002-12-10 2005-02-22 International Business Machines Corporation Low defect pre-emitter and pre-base oxide etch for bipolar transistors and related tooling
US7029536B2 (en) * 2003-03-17 2006-04-18 Tokyo Electron Limited Processing system and method for treating a substrate
WO2004084281A1 (ja) * 2003-03-17 2004-09-30 Nikon Corporation 投影光学系、露光装置、および露光方法
JP4039385B2 (ja) * 2003-04-22 2008-01-30 東京エレクトロン株式会社 ケミカル酸化膜の除去方法
JP4833512B2 (ja) * 2003-06-24 2011-12-07 東京エレクトロン株式会社 被処理体処理装置、被処理体処理方法及び被処理体搬送方法
JP4495470B2 (ja) * 2004-01-13 2010-07-07 三星電子株式会社 エッチング方法

Also Published As

Publication number Publication date
WO2007074695A1 (ja) 2007-07-05
TWI333674B (enrdf_load_stackoverflow) 2010-11-21
JP2007180418A (ja) 2007-07-12
TW200739711A (en) 2007-10-16

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