JP2017188632A - 基板処理方法及び基板処理装置 - Google Patents
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- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 abstract description 55
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract description 34
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Abstract
Description
(NH4)2SiF6(固体) → 2NH3↑+SiF4↑+2HF↑
10 基板処理システム
14 エッチング装置
25 チャンバ
58 昇華ガス
59 不活性ガスの流れ
60 不活性ガス貯蔵タンク
61 ヒータ
Claims (12)
- 基板の表面に形成された酸化膜を除去する基板処理方法であって、
処理室の内部に収容された前記基板に対してハロゲン元素含有ガス及び塩基性ガスを供給することにより、前記酸化膜を反応生成物に変質させる反応工程と、
前記処理室の内部への前記ハロゲン元素含有ガスの供給を停止することにより、前記反応生成物を昇華させて前記基板から除去する昇華工程とを有し、
前記処理室の内部へ不活性ガスを供給することによって前記昇華工程における前記処理室の内部の圧力を、前記反応工程における前記処理室の内部の圧力よりも高くすることを特徴とする基板処理方法。 - 前記昇華工程における前記処理室の内部への前記不活性ガスの供給量を、前記反応工程における前記処理室の内部への前記不活性ガスの供給量よりも大きくすることを特徴とする請求項1記載の基板処理方法。
- 前記昇華工程における前記処理室の内部への前記不活性ガスの供給量を、前記反応工程における前記処理室の内部への前記不活性ガスの供給量の3倍以上とすることを特徴とする請求項2記載の基板処理方法。
- 前記反応工程と前記昇華工程が、複数回、繰り返し実行されることを特徴とする請求項1乃至3のいずれか1項に記載の基板処理方法。
- 前記昇華工程において前記処理室の内部へ供給される前記不活性ガスの温度を80℃以上に保つことを特徴とする請求項1乃至4のいずれか1項に記載の基板処理方法。
- 前記昇華工程において前記処理室の内部へ供給される前記不活性ガスの温度を120℃以上に保つことを特徴とする請求項5記載の基板処理方法。
- 前記昇華工程における前記処理室の内部の圧力と、前記反応工程における前記処理室の内部の圧力との差は4Torr以内であることを特徴とする請求項1乃至6のいずれか1項に記載の基板処理方法。
- 前記不活性ガスを予め貯蔵し、前記昇華工程において前記貯蔵された不活性ガスを前記処理室の内部へ供給することを特徴とする請求項1乃至7のいずれか1項に記載の基板処理方法。
- 基板を収容する処理室と、
ハロゲン元素含有ガス、塩基性ガス及び不活性ガスを選択的に前記処理室の内部へ供給するガス供給ユニットを備え、
前記ガス供給ユニットは、前記処理室の内部へ前記ハロゲン元素含有ガス及び前記塩基性ガスを供給することにより、前記処理室に収容された基板に形成された酸化膜を反応生成物に変質させる反応工程を実行し、さらに、前記処理室の内部への前記ハロゲン元素含有ガスの供給を停止することにより、前記反応生成物を昇華させて前記基板から除去する昇華工程を実行し、
前記ガス供給ユニットは、さらに、前記処理室の内部へ不活性ガスを供給することによって前記昇華工程における前記処理室の内部の圧力を、前記反応工程における前記処理室の内部の圧力よりも高くすることを特徴とする基板処理装置。 - 前記ガス供給ユニットは、前記昇華工程における前記処理室の内部への前記不活性ガスの供給量を、前記反応工程における前記処理室の内部への前記不活性ガスの供給量よりも大きくすることを特徴とする請求項9記載の基板処理装置。
- 前記不活性ガスを加熱するガス加熱ユニットをさらに備え、
前記ガス加熱ユニットは、前記昇華工程において前記処理室の内部へ供給される前記不活性ガスの温度を80℃以上に保つことを特徴とする請求項9又は10記載の基板処理装置。 - 前記不活性ガスを予め貯蔵するガス貯蔵ユニットをさらに備え、
前記ガス貯蔵ユニットは、前記昇華工程において前記貯蔵された不活性ガスを前記処理室の内部へ供給することを特徴とする請求項9乃至11のいずれか1項に記載の基板処理装置。
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TW106110342A TWI727023B (zh) | 2016-04-08 | 2017-03-28 | 基板處理方法及基板處理裝置 |
CN201710209577.7A CN107275184B (zh) | 2016-04-08 | 2017-03-31 | 基板处理方法和基板处理装置 |
US15/480,707 US20170294319A1 (en) | 2016-04-08 | 2017-04-06 | Substrate processing method and substrate processing apparatus |
KR1020170044829A KR102030232B1 (ko) | 2016-04-08 | 2017-04-06 | 기판 처리 방법 및 기판 처리 장치 |
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JPWO2019235196A1 (ja) * | 2018-06-08 | 2021-06-17 | 株式会社アルバック | 酸化膜除去方法、および、酸化膜除去装置 |
JP7362258B2 (ja) * | 2019-02-08 | 2023-10-17 | 東京エレクトロン株式会社 | 基板処理方法及び成膜システム |
US10937659B2 (en) * | 2019-04-09 | 2021-03-02 | Tokyo Electron Limited | Method of anisotropically etching adjacent lines with multi-color selectivity |
JP7415594B2 (ja) * | 2020-01-24 | 2024-01-17 | 東京エレクトロン株式会社 | 基板処理方法及び基板処理装置 |
US20220020615A1 (en) * | 2020-07-19 | 2022-01-20 | Applied Materials, Inc. | Multiple process semiconductor processing system |
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US20170294319A1 (en) | 2017-10-12 |
US20190181015A1 (en) | 2019-06-13 |
KR20170115962A (ko) | 2017-10-18 |
TWI727023B (zh) | 2021-05-11 |
CN107275184A (zh) | 2017-10-20 |
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KR102030232B1 (ko) | 2019-10-08 |
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