TWI311817B - Avalanche photodiode - Google Patents

Avalanche photodiode Download PDF

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Publication number
TWI311817B
TWI311817B TW095130224A TW95130224A TWI311817B TW I311817 B TWI311817 B TW I311817B TW 095130224 A TW095130224 A TW 095130224A TW 95130224 A TW95130224 A TW 95130224A TW I311817 B TWI311817 B TW I311817B
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TW
Taiwan
Prior art keywords
layer
type
window layer
semiconductor
window
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TW095130224A
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English (en)
Chinese (zh)
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TW200715595A (en
Inventor
Eiji Yagyu
Eitaro Ishimura
Masaharu Nakaji
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Mitsubishi Electric Corp
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Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Publication of TW200715595A publication Critical patent/TW200715595A/zh
Application granted granted Critical
Publication of TWI311817B publication Critical patent/TWI311817B/zh

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H10F30/21—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
    • H10F30/22—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes
    • H10F30/225—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes the potential barrier working in avalanche mode, e.g. avalanche photodiodes

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  • Light Receiving Elements (AREA)
TW095130224A 2005-09-12 2006-08-17 Avalanche photodiode TWI311817B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2005263470A JP4956944B2 (ja) 2005-09-12 2005-09-12 アバランシェフォトダイオード

Publications (2)

Publication Number Publication Date
TW200715595A TW200715595A (en) 2007-04-16
TWI311817B true TWI311817B (en) 2009-07-01

Family

ID=37878900

Family Applications (1)

Application Number Title Priority Date Filing Date
TW095130224A TWI311817B (en) 2005-09-12 2006-08-17 Avalanche photodiode

Country Status (4)

Country Link
US (1) US7538367B2 (enExample)
JP (1) JP4956944B2 (enExample)
CN (2) CN101431118B (enExample)
TW (1) TWI311817B (enExample)

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI552371B (zh) * 2009-09-07 2016-10-01 Sumitomo Electric Industries A group III-V compound semiconductor light-receiving element, a method for fabricating a III-V compound semiconductor light-receiving element, a light-receiving element, and an epitaxial wafer

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JP4721147B1 (ja) * 2011-02-21 2011-07-13 住友電気工業株式会社 生体成分検出装置
JP4737478B2 (ja) * 2011-02-21 2011-08-03 住友電気工業株式会社 食品品質検査装置、食品成分検査装置、異物成分検査装置、食味検査装置および変移状態検査装置
JP4743458B2 (ja) * 2011-03-17 2011-08-10 住友電気工業株式会社 水分検出装置、生体中水分検出装置、自然産物中水分検出装置、および製品・材料中水分検出装置
GB2504977B (en) 2012-08-16 2017-10-04 Airbus Defence & Space Gmbh Laser power converter
CN103107231A (zh) * 2013-02-05 2013-05-15 武汉电信器件有限公司 一种基于非N型InP衬底的雪崩光电二极管及其制备方法
JP5776745B2 (ja) * 2013-10-15 2015-09-09 住友電気工業株式会社 受光素子及びエピタキシャルウェハ
JP6332096B2 (ja) * 2015-03-23 2018-05-30 三菱電機株式会社 半導体受光素子
US20190157479A1 (en) * 2017-09-15 2019-05-23 Kabushiki Kaisha Toshiba Photodetection element, photodetector, photodetection system and laser imaging detection and ranging apparatus
CN111066157B (zh) * 2017-09-15 2023-05-02 三菱电机株式会社 半导体受光元件及其制造方法
CN109216495B (zh) * 2018-10-24 2023-12-29 芯思杰技术(深圳)股份有限公司 雪崩光电探测器、制作方法以及激光雷达系统
CN113366656B (zh) * 2019-03-20 2025-03-25 索尼半导体解决方案公司 光接收元件、光接收元件的制造方法以及摄像装置
CN111755555B (zh) * 2020-07-06 2022-01-07 武汉光谷量子技术有限公司 台面型二极管及其制作方法、阵列芯片的制作方法
KR102314915B1 (ko) * 2020-11-16 2021-10-20 주식회사 우리로 암전류의 발생을 최소화한 단일광자 검출장치 및 시스템
TWI886929B (zh) * 2024-04-29 2025-06-11 聯亞光電工業股份有限公司 光檢測元件

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI552371B (zh) * 2009-09-07 2016-10-01 Sumitomo Electric Industries A group III-V compound semiconductor light-receiving element, a method for fabricating a III-V compound semiconductor light-receiving element, a light-receiving element, and an epitaxial wafer

Also Published As

Publication number Publication date
CN101431118B (zh) 2011-04-20
CN101431118A (zh) 2009-05-13
CN100521255C (zh) 2009-07-29
US7538367B2 (en) 2009-05-26
CN1933187A (zh) 2007-03-21
JP2007080920A (ja) 2007-03-29
JP4956944B2 (ja) 2012-06-20
TW200715595A (en) 2007-04-16
US20070096236A1 (en) 2007-05-03

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