JP4956944B2 - アバランシェフォトダイオード - Google Patents

アバランシェフォトダイオード Download PDF

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Publication number
JP4956944B2
JP4956944B2 JP2005263470A JP2005263470A JP4956944B2 JP 4956944 B2 JP4956944 B2 JP 4956944B2 JP 2005263470 A JP2005263470 A JP 2005263470A JP 2005263470 A JP2005263470 A JP 2005263470A JP 4956944 B2 JP4956944 B2 JP 4956944B2
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Japan
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JP2005263470A
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Japanese (ja)
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JP2007080920A (ja
JP2007080920A5 (enExample
Inventor
栄治 柳生
栄太郎 石村
雅晴 中路
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Mitsubishi Electric Corp
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Mitsubishi Electric Corp
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Priority to JP2005263470A priority Critical patent/JP4956944B2/ja
Priority to TW095130224A priority patent/TWI311817B/zh
Priority to US11/515,857 priority patent/US7538367B2/en
Priority to CN2008101885986A priority patent/CN101431118B/zh
Priority to CNB2006101539306A priority patent/CN100521255C/zh
Publication of JP2007080920A publication Critical patent/JP2007080920A/ja
Publication of JP2007080920A5 publication Critical patent/JP2007080920A5/ja
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H10F30/21—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
    • H10F30/22—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes
    • H10F30/225—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes the potential barrier working in avalanche mode, e.g. avalanche photodiodes

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  • Light Receiving Elements (AREA)
JP2005263470A 2005-09-12 2005-09-12 アバランシェフォトダイオード Expired - Lifetime JP4956944B2 (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP2005263470A JP4956944B2 (ja) 2005-09-12 2005-09-12 アバランシェフォトダイオード
TW095130224A TWI311817B (en) 2005-09-12 2006-08-17 Avalanche photodiode
US11/515,857 US7538367B2 (en) 2005-09-12 2006-09-06 Avalanche photodiode
CN2008101885986A CN101431118B (zh) 2005-09-12 2006-09-12 雪崩光电二极管
CNB2006101539306A CN100521255C (zh) 2005-09-12 2006-09-12 雪崩光电二极管

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2005263470A JP4956944B2 (ja) 2005-09-12 2005-09-12 アバランシェフォトダイオード

Publications (3)

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JP2007080920A JP2007080920A (ja) 2007-03-29
JP2007080920A5 JP2007080920A5 (enExample) 2008-02-21
JP4956944B2 true JP4956944B2 (ja) 2012-06-20

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JP2005263470A Expired - Lifetime JP4956944B2 (ja) 2005-09-12 2005-09-12 アバランシェフォトダイオード

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US (1) US7538367B2 (enExample)
JP (1) JP4956944B2 (enExample)
CN (2) CN100521255C (enExample)
TW (1) TWI311817B (enExample)

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WO2008011617A2 (en) * 2006-07-21 2008-01-24 The Regents Of The University Of California Shallow-trench-isolation (sti)-bounded single-photon avalanche photodetectors
CN100483650C (zh) * 2007-06-14 2009-04-29 中山大学 一种抑止雪崩光电二极管边缘击穿的方法
US7834379B2 (en) * 2007-07-18 2010-11-16 Jds Uniphase Corporation Avalanche photodiode with edge breakdown suppression
US7795064B2 (en) * 2007-11-14 2010-09-14 Jds Uniphase Corporation Front-illuminated avalanche photodiode
JP4662188B2 (ja) * 2008-02-01 2011-03-30 住友電気工業株式会社 受光素子、受光素子アレイおよびそれらの製造方法
JP5195172B2 (ja) 2008-08-29 2013-05-08 住友電気工業株式会社 水分検出装置、生体中水分検出装置、自然産物中水分検出装置、および製品・材料中水分検出装置
JP5233535B2 (ja) * 2008-09-11 2013-07-10 住友電気工業株式会社 撮像装置、視界支援装置、暗視装置、航海支援装置および監視装置
JP5233549B2 (ja) * 2008-09-22 2013-07-10 住友電気工業株式会社 食品品質検査装置、食品成分検査装置、異物成分検査装置、食味検査装置および変移状態検査装置
JP2010135360A (ja) * 2008-12-02 2010-06-17 Mitsubishi Electric Corp アバランシェフォトダイオード
JP4728386B2 (ja) * 2008-12-17 2011-07-20 Ｎｔｔエレクトロニクス株式会社 アバランシ・フォトダイオード
JP5422990B2 (ja) 2008-12-22 2014-02-19 住友電気工業株式会社 生体成分検出装置
JP4743453B2 (ja) * 2008-12-25 2011-08-10 住友電気工業株式会社 気体モニタリング装置、燃焼状態モニタリング装置、経年変化モニタリング装置、および不純物濃度モニタリング装置
CN102265411B (zh) * 2008-12-26 2014-06-11 住友电气工业株式会社 受光元件、受光元件阵列、制造受光元件的方法以及制造受光元件阵列的方法
JP5271104B2 (ja) 2009-02-13 2013-08-21 浜松ホトニクス株式会社 リニアイメージセンサ
JP5091886B2 (ja) 2009-02-13 2012-12-05 浜松ホトニクス株式会社 イメージセンサ
JP5391945B2 (ja) * 2009-09-07 2014-01-15 住友電気工業株式会社 受光素子及びエピタキシャルウェハ
CN102292833B (zh) 2009-09-07 2015-07-29 住友电气工业株式会社 Iii-v族化合物半导体受光元件
JP4706805B2 (ja) * 2011-01-21 2011-06-22 住友電気工業株式会社 撮像装置、視界支援装置、暗視装置、航海支援装置および監視装置
JP4737478B2 (ja) * 2011-02-21 2011-08-03 住友電気工業株式会社 食品品質検査装置、食品成分検査装置、異物成分検査装置、食味検査装置および変移状態検査装置
JP4721147B1 (ja) * 2011-02-21 2011-07-13 住友電気工業株式会社 生体成分検出装置
JP4743458B2 (ja) * 2011-03-17 2011-08-10 住友電気工業株式会社 水分検出装置、生体中水分検出装置、自然産物中水分検出装置、および製品・材料中水分検出装置
GB2504977B (en) 2012-08-16 2017-10-04 Airbus Defence & Space Gmbh Laser power converter
CN103107231A (zh) * 2013-02-05 2013-05-15 武汉电信器件有限公司 一种基于非N型InP衬底的雪崩光电二极管及其制备方法
JP5776745B2 (ja) * 2013-10-15 2015-09-09 住友電気工業株式会社 受光素子及びエピタキシャルウェハ
JP6332096B2 (ja) * 2015-03-23 2018-05-30 三菱電機株式会社 半導体受光素子
US20190157479A1 (en) * 2017-09-15 2019-05-23 Kabushiki Kaisha Toshiba Photodetection element, photodetector, photodetection system and laser imaging detection and ranging apparatus
US11329179B2 (en) * 2017-09-15 2022-05-10 Mitsubishi Electric Corporation Semiconductor light-receiving device and method for manufacturing the same
CN109216495B (zh) * 2018-10-24 2023-12-29 芯思杰技术(深圳)股份有限公司 雪崩光电探测器、制作方法以及激光雷达系统
CN113366656B (zh) * 2019-03-20 2025-03-25 索尼半导体解决方案公司 光接收元件、光接收元件的制造方法以及摄像装置
CN111755555B (zh) * 2020-07-06 2022-01-07 武汉光谷量子技术有限公司 台面型二极管及其制作方法、阵列芯片的制作方法
KR102314915B1 (ko) * 2020-11-16 2021-10-20 주식회사 우리로 암전류의 발생을 최소화한 단일광자 검출장치 및 시스템
TWI886929B (zh) * 2024-04-29 2025-06-11 聯亞光電工業股份有限公司 光檢測元件

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Also Published As

Publication number Publication date
US7538367B2 (en) 2009-05-26
TWI311817B (en) 2009-07-01
CN1933187A (zh) 2007-03-21
JP2007080920A (ja) 2007-03-29
CN101431118A (zh) 2009-05-13
US20070096236A1 (en) 2007-05-03
TW200715595A (en) 2007-04-16
CN101431118B (zh) 2011-04-20
CN100521255C (zh) 2009-07-29

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