TWI306423B - Method for bonding between electrical devices using ultrasonic vibration - Google Patents

Method for bonding between electrical devices using ultrasonic vibration Download PDF

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Publication number
TWI306423B
TWI306423B TW095143148A TW95143148A TWI306423B TW I306423 B TWI306423 B TW I306423B TW 095143148 A TW095143148 A TW 095143148A TW 95143148 A TW95143148 A TW 95143148A TW I306423 B TWI306423 B TW I306423B
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Taiwan
Prior art keywords
bonding
electrical devices
adhesive
substrate
resin
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TW095143148A
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English (en)
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TW200724272A (en
Inventor
Kyung Wook Paik
Myung-Jin Yim
Hyoung-Joon Kim
Ki-Won Lee
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Korea Advanced Inst Sci & Tech
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Publication of TW200724272A publication Critical patent/TW200724272A/zh
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Publication of TWI306423B publication Critical patent/TWI306423B/zh

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  • Condensed Matter Physics & Semiconductors (AREA)
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  • Wire Bonding (AREA)
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  • Electric Connection Of Electric Components To Printed Circuits (AREA)

Description

'1306423 % 九、發明說明： 本申凊案主張於2005年11月24日向韓國智慧財產局 申請的韓國專利申請案第2005-1 1 31 05號的優先權，其整 個内容在此被一併供做參考。 【發明所屬之技術領域】 本發明係有關於一種在電氣裝置之間黏合的方法，且 ^特別地，係有關於一種在電氣裝置之間黏合的方法，其 田在電氣裝置之間黏合時，在硬化黏著劑的過程中能除去 從外部施加熱或者施加較低溫度的熱的需要，且在熱壓黏 合過程的情況中能降低過程的壓力。 * 【先前技術】 π隨著目前對於例如輕薄短小、高性能、高整合、及對 衣土兄無害的半導體封裝技術的要求，I晶技術的重要性已 曰曰片等、、及黏合方法中引起注意。覆晶技術目前已將盆使 用領域擴大至顯示器封裝，諸如對於_智慧卡、lp 等等者、電腦、行動電話、通信系統、或諸如此類。被用 在覆晶技術中的相互遠接好 連接材科主要可被分成焊錫和非焊錫 ’ 則，主要使用的是使用焊錫的覆晶技術。但是， 焊錫具有成本效益^1 、> 的問喊和禝雜的黏合過程，例如助焊劑
k層、晶月/基板對準、P姐π A 旱烊錫凸塊回流、助焊劑移除、底部 填充、及硬化。此外，告日 - 製作谭錫球…膜二 她更小時，變得更難 4 Μ1程和微影製程等的處理成本也增
5140-8488-PF 5 '1306423 力所以，隨者對於細微間距黏合技術及低成本覆晶技術 、/、之θ加增加了對於非烊錫材料的興趣。因此，與使 般的焊錫覆晶者相比’覆晶黏合技術已發展出使用具 有低成本、極細微間距能力、無鉛製程、對環境無害的無 助焊劑製程、及低溫製程等優點的黏著劑。 作為半導體封裝的互連材料的黏著劑主要包括等 NCA)4等。通f，黏著劑是由導電金屬粒子與具有絕緣特 ^黏=的聚合物樹脂組成的複合材料’並根據導電粒 躍=二二A_ ICA。特別地’當產生電性 \夺導電粒子的内容值被稱為展透閾值。根據導電粒子 的内谷’沒有導電粒子的黏著劑s NCA，而 :值的導電粒子之黏著劑是似。此外，具有高於二； 著劑是ICA，其材料本身具有導電特性。做為 可為不/之互連材枓的㈣、功能和㈣就其特徵而言 作為非焊錫覆晶封裝的互連材料 ⑽)的-個應用例係被顯示於圖卜參考圖心 施加於非焊錫凸塊之後，諸如金線成形凸塊、或 2 塊、及無電解鎳/金凸塊’其被形成在半導體晶片上，非r 錫凸塊及基板電極的對準被執行。然後，熱被施加亍 以將其硬化，使得在非惶雜 在非烊錫凸塊及基板電極之間的電性互
連被H在此時’雖然其可能根據ICA的硬化 同’但是加熱大約係在180。。進行10到3。分鐘。然後不 5140-8488-PF '1306423 在晶片和基板間的底部填充裳程被執行以改進覆晶 可靠性。 我的 # 一非等向導電薄膜（ACF)係具有電性非等向特性和黏 著特性的一聚合物薄膜。ACF在膜厚方向具有導電特性1 f表面方向具有絕緣特性，並且基本上係由例如鎳、金/ 聚口物、銀等的導電粒子和具有熱固特性或熱塑性的絕緣 樹脂構成。電性互連係以導電粒子被製作在上面的電極和 下面的電極之間。這些導電粒子透過在熱和壓力之下 被放在一晶片或具有被安裝在其上的-晶片之-可撓式電 與-玻璃基板或—硬式基板（圖2)之間而被分散在 此時’絕緣樹脂的硬化係經由施加的熱被產生以產生 更大的黏著強度。為了發展低成本黏著劑的生產過 ^此黏著劑的低成本覆晶過程，使用具有高速硬化特性的 …固性樹脂或丙埽酸系樹脂之ACF已被商品化。似 形式(非等向導電薄膜，acf)和-膠形式 =向性導電膠，ACP)。近來，為了簡化黏合過程和黏著 %、產過私，膠形式的黏著劑已被開發。再者，& 成極細微間距黏合和低成本，及以膠形式製造的NCP,而 有用於除去導電粒子的非導電薄膜(ncf)。 圖3顯示使用NCF志μγρ a a ^ -過程。，… 為一互連材料的-覆晶黏 並且使它對準-晶片，並ΐ 周遭施加NCF或Ncp 凸塊被形成，且然後當經由埶 ’’、、、成形 ”、、壓黏&過程將非焊錫凸塊
5140-8488-PF 1306423 接與基板電極接觸時經由施加熱而使NCA變硬。 諸如 iCA、ACAUCF、ACP)、NCA(JVCF、NCP)等的互連 材料已被用於諸如LCD、PDP、0LED等的平板顯示模塊的安 裝、電氣裝置的表面安裝、和半導體覆晶黏合。再者，互 連材料已被廣泛地使用在平板顯示模組安裝領域中之外引 腳黏合（0LB)過程、pcb過程、玻璃覆晶（c〇G)過程、薄膜 设日日（C0F)過程，且已將他們的市場擴大至非焊錫覆晶黏合 過程及表面設備安裝技術。 為了裝配電或電子裝置或電路導線，ICA是可取代在 黏合過程中使用的現有焊錫的㈣。其應用㈣類似於焊 錫黏合領域。也就是說，其可被用於裝配表面安裝裝置， 其要求回焊或使用焊錫黏合覆晶，並可經由在比回焊過程 低的溫度熱固似而達成黏合。不過，在過程溫度高且硬 化時間長的情況中有一種弱點。 在ACA的情況中，盆p姑田+ , ”匕破用在顯示模組的安裝中。acf 被最廣泛地用於當黏合一可揍彳Α Λ 視式基板至一玻璃基板時被使 用的0LB黏合及當黏合一可搪彳|上 j撓式基板至一 PCB基板時被使 用的PCB黏合。根據應用領域， '、畀有不同種類的導電粒 子，且其需要低溫快速硬化_ 机人 欠化_，其中當黏合時間變快時 黏合溫度變低。 越多驅動電路IC晶片變杰古〜 ^, 羑成焉密度和高整合性，在驅動 电路IC晶片直接黏合至基板站链从 —丄 反坡螭的COG過程中，及在一驅 動電路IC晶片經由覆晶方法勤人 ,w a 4合至可撓式基板的C0F過程 中，對極細微間距的需要增加的越多 枉
5140-8488-PF '1306423 化類二“】需要ACF的極細微間距黏合及低溫快速硬 細微間距黏合能力的要求設::：康插座或得錫的極 庚沾、ui、 ^ °又汁自由度、及黏合面積與高 :及硬二：了顯示模組安裝之外’ ACF #合在可撓式基 Μ基板的安裝中將被取代。其效用由 黏合過程取代使用«的料之“黏合㈣㈣= 因此’NCA快速的出現做為似的代用材料。做為被用於 非焊錫覆晶黏合過程中的非焊錫凸塊，有金線成形凸塊、 鑛金凸塊、無電解錄凸塊、及銅凸塊等。在此情況中，因 為經由回流的覆晶黏合由於高炼點無法被執行，覆晶黏合 過程已使用ACF經由熱壓黏合過程被執行。 不過，使用ACF的OLB、PCB、COG、C〇F、及可撓式一 對-硬式黏合過程、及覆晶黏合過程係基於使用熱麗黏^^過 程及與其鄰接的聚合物樹脂之熱固化的導電粒子與電極及 非烊錫凸塊的機械接觸。因此，解決黏合壓力、聚合物樹 脂的均勻熱固化、快速熱固操作的高過程溫度、且因此、 封裝的熱變形、及基板的可平面性等的各種應用問題是必 要的。特別地，假如複合物半導體晶片或矽晶片的厚度薄， 因為其對於過程壓力變得較為易碎，則由於產生的黏合壓 力的限制’使用ACF黏合技術是非常困難的。 因此’如果可解決在半導體黏合過程中或在使用ICA、 ACF、NCF、ACP和NCP的安裝過程中之上述問題的新材料 或過程被開發，使用ICA、ACA和NCA等的聚合物互連材料、 及使用他們的低温黏合過程、及低成本黏合技術的可能性
5140-8488-PF 9
1306423 非常高。 、、主、再者’在因為電子產品的環保問題（由於使用助焊劑、 清潔、含鉛的焊錫等）被視為嚴重問題而嚴密地限制的 使用及Pb的使用的情況下’關於做為對環境無害的替代材 料之這些材料的強烈興趣增加。 【發明内容】
本發明已被提出以解決該習知技藝 的問題。本發明之 目的 在電 時， 係在於移除該習知技藝的問題，特別係在於提供一種 乳裝置之間黏合的方法，其當在電氣裝置之間黏合 在硬化黏著劑的步驟中能移除從外部施加熱或者施加 較低溫度的熱的需I，且在熱壓黏合過程m中能降低 過程的壓力。 為了元成目的，本發明提供一種在電氣裝置之間黏合 的方法，其包括下列步驟：對準在將被黏合的一上面的電 Φ氣裝置和一下面的電氣裝置的—黏合區域的電極；及經由 施加超音波能量至在上面的電氣裝置及下面的電氣裝置之 間的黏著劑而硬化黏著劑，從而加熱黏著劑本身。 【實施方式】 下面，本發明將被更詳細說明。 在本發明中，將被黏合的電氣裝置意指被用在諸如半 導體晶片或基板等的電性產品中的裝置，且在電氣裝置之 間的黏合意指在半導體晶片和基板之間、在半導體晶片和 5140-8488-PF 10 1306423 半導體晶片之間、或者在基板和基板之間的電氣連接 -種這樣的半導體晶片未被特別限制，並且例如，顯 :器驅動電路1C、影像感測器IC、記憶IC、非記憶〗;、 起馬頻或RF 1C、具有矽作為主要組成部分的半導體丨[和 化合物半導體1C可被包括。 口 半導體晶片可在黏合區域上的電極（或輸入/輸出墊） 中不具有非焊錫凸塊，或者可具有從由例如金線成形凸塊、 銅線成形凸塊、鍍金的凸塊、鍍銅的凸塊、無電解鎳/金凸 塊、及無電解鎳/銅/金凸塊中選出的一種凸塊，做為金屬 打線成形凸塊或金屬電鍍凸塊。 ' 此外，基板可為可撓式基板或硬式基板。這些基板之 可形成與半導體晶片的電性連接，或可形成與其它美板 的電性連接，所以包括在可撓式基板之間、在硬式基二之 間、或在可撓式基板和硬式基板之間的電性連接。例如， 可撓式基板意味具有可撓性的基板，諸如 航 板，心屬線。同時，硬式基板可為在環氧:::胺璃基 陶益、玻璃和矽半導體的基板。 黏著劑可為導電黏著劑或非導電黏著劑， 劑可再為似或ACA。 者 ICA包括導電粒子。可使用的導電粒子未被特 =包括由銀、銅、金、碳、錄、飽'具有-低炼點的 干’；々以及其結合組成的群組中選出者。 "“使用聚合物樹脂作為主要組成部分的ICA ’例如，可 攸4如％氧樹月曰匕、聚醋樹脂、丙稀酸樹脂、聚亞醯胺樹脂
5140-8488-PF 11 1306423 和聚砜樹脂等的熱塑性樹脂或熱固性樹脂中被選出。 / ACA包括非等向導電薄膜（ACF)或非等向導電膠（Acp) 的形式。當黏著劑是薄膜類型時，黏著層可經由將具有黏 性的-表面在約80°C以5kgf /cra2預麼在基板且然後除去 隔離紙薄膜的方法而被施加至基板。再者，#黏著劑是膠 類型時，其經由使用喷塗設備或網印機而可將固定量的黏 著劑施加於想要的形狀。
攻些黏著劑包括導電粒子。可使用的導電粒子未被特 別限制’且例如可包括從由塗金的聚合物粒子、塗金的錄 粒子、塗金的銅粒子、塗有低炫點焊錫層的銅粒子、低溶 占:fcf錫粒子、及其結合組成的—群組中選出者。 此外，ACA可更包括尺寸比導電粒子小的非導電粒子。 作為非導電粒子關子，可包括_或更小的二氧化石夕、 乳化链、氧倾、碳切、鑽石、氮㈣等。黏著劑的敎 膨脹係數可經由如上述加入非導電粒子而被降低。 …、
舉例而s，使用聚合物樹脂做為主要組成部分的A" 可從諸如環氧樹月旨、聚酯樹脂、丙烯酸樹脂、聚亞酿胺朽 脂和聚砜樹脂等的熱塑性樹脂或熱固性樹脂中被選出/ NCA包括非導電薄膜（NCF)或非導電膠（Ncp)的形式 當黏著劑是薄膜類型時，黏著層可/ 面在一 一預壓在基板且然後除去二: 膜的方法而被施加至基板。再者，當黏著劑是勝類型時 二由使用喷塗设備或網印機而可將固定量的黏著劑 於想要的形狀。 v
5140-8488-PF 12 1306423 包括Γ以㈣導電粒子。作為料電粒子的例子，可 μπι或更小的二氧化矽、氧化鋁、氧化鈹山 鑽石、氮化蝴等。黏著劑的熱膨脹 、爾、 非導電粒子而被降低由如上述加入 舉例而言’使用聚合物樹 可從諸如…虹 物树月曰做為主要組成部分的腸 脂”砸/ “曰、聚酿樹脂、丙烯酸樹脂、聚亞酸胺樹 刀曰矛鬈石風樹腊等的埶塑枓# ㈣…、塑性树月曰或熱固性樹脂中被選出。 過程本:：包括可被施加至各種黏合架構的黏著劑的硬化 :據本發明之黏著劑的硬化過程包括用以將超音波 加於黏著劑的過程。透過使用超音波能量，降低過 红手間和溫度是可能的。 超音波振動可使用縱向或水平方向或其結合。為此目 用’-縱向超音波轉換器及/或一水平超音波轉換器可被使 入/所周知縱向超音波轉換器的特徵是經由使被施加於 王《合區域的振動均“改進生產良率及黏合可靠性。 若甚至在上面電極與下面電極接觸之後仍繼續振 ’則：損害晶片的危險。在此情況中，其透過使用一 Μ帽覆蓋超音波喇叭形輻射體的末端以減輕影響。 同時’在水平超音波轉換器的情況中，因為振動被施加在 水平方向，由縱向轉換器引起的損害可被減到最小。但是， 在使用晶粒筒失等的情況中，為了固定晶片，在晶片末端 、·^ «特n心由產生錐形振動而變壞，所以發生生產良率 及黏合可靠性的劣化。 在本發明中，就ICA，ACA，NCA的特徵而言，適當的
5140-8488-PF 13 1306423 =範圍是2G〇^6GKHz。如果頻率在 里時被增加，振幅可能與其反比例地降低 同的能 或晶片的損宝。s 土 、 丨牛低對位不準 卞不同胜。 ’因為黏著劑的加熱操作根據頻率表 的特徵’所以需要執行最佳化過程以與過… 條件匹配。同時，因為振動/的 的質量和形狀o h 田早儀益中的振動器 必要的。’、，為了改變頻率，修改或者替換儀器是 =本發明經由使用單—儀器而固定並使用頻率，則被 Μ立/黏合的超音波能量係由超音波振動振幅決定。因為 超音波振動振幅係由被施加至振動器的電源之電壓決定’、、、 =可經由改變電壓被控制。如果被應用於黏合的超音波 能量太大，因為發生晶片的損害或黏著劑的過&，最：化 超音波振動振幅是必要的。特別地，在使帛似、ACA和 NCA的覆晶黏合中，對凸塊和概塾的損害可能在凸塊㈣ 墊的接觸發生之後被引起或者對晶片的損害可能在黏著劑 被硬化之後被引起。為了防止這些，可使用振幅可變的方 法’在黏合過程被進行的期Μ，當黏合幾乎被完成時，其 順利地降低被施加以降低超音波振動振幅的電壓。 ^ 如果超音波振動頻率和振動振幅被決定，根據時間之 在黏著劑中的加熱值被決定。因為本發明實現使用ica、 ACA和NAC的熱超音波黏合，在適當的溫度以適當的時間 硬化黏著劑是非常重要的。於此，考慮到黏著劑的硬化溫 度和分解溫度，適當的溫度大約是18〇它到4〇(rc。如果溫 度低，則硬化不會發生，使得黏合無法發生。並且如果溫
5140-8488-PF 14 I3〇6423 ^ ’由於黏著劑的分解或在黏著劑内的空隙 的時間很聋。適，的時間意味著到黏著劑被完全硬化為止 根據本發明’超音波能量可以對 定頻率的古土彳土 疋之時間鉍加固 就2 者以脈衝的形式施加它的方法被施加。也 的條件下姑、……7超曰波振動頻率和振動振幅 保件下被連續地施加日夺，如果 範圍，埶立、“,a ㈣的-度不超過溫度 3圍熱曰波黏合可僅控制超音波振動時間而被實現。作 I:著:果ΐ音波振動頻率及/或振動振幅具有大的值，使得 ^劑的溫度超過溫度範圍，黏著劑的®埶"T i f 以腑淑^ i 他書d的過熱可由電源供應 形式間歇地提供能量而被防止。 “ ΠΚΘΑ ^脱根據溫度具有流變學的特徵。因為經 變；徵能量而在黏著劑本身内產生的熱根據黏著劑的流 子特徵而變化’當溫度經由將熱施加於全部或一些的上 和下面的黏合部分而上升夺， a 才匙始皿度上升率可被改 之a、、當熱施加至黏著劑以使黏著劑的黏性在其硬化 别減到最小，使得黏著劑樹脂能順利流動時 黏合區域夕pq ΛΑ ^ β 7} ^ 4的黏性且進而降低過程壓力的效果。 以:’根據本發明之經由使用超音波能量硬化黏著劑 電孔裝置間的黏合過程將參考實施例更詳細地被說 明〇 過程 圖4顯示使用ICA之在半導體晶片和基板之間的黏合 護層且然後以1_的厚 黏合過程在矽晶片上完成Si〇:
5140-8488-PF 15 Ί306423 度^其上沉㈣導線。在此之後，其執行抓或抓護層 過知且然後形成1/0直徑100μιη及間距18。_之μ導孔。 其在I/O襯墊上形成金線成形凸塊且然後執行一平坦化過 :以降低各自凸塊的高度的偏差。在此時，其可形成銅線 、形凸塊以取代金線成形凸塊，並且同樣執行平坦化過程。 、基板是厚度1賴的FR-4有機基板，具有錄/銅/金導線 以做為金導線並且除了電極外以焊錫罩幕保護。
ICA係與諸如聚合物樹脂等的矩陣材料和諸如銀、碳 粒：等的導電填料混合’且其一般的形式是膠。作為聚合 物樹脂’有諸如丙烯酸樹脂、聚亞醯胺樹脂、聚砜樹脂等 :熱塑性樹脂、諸如環氧樹脂、酚醛樹脂、三聚氰胺樹脂、 聚酯樹脂等的熱固性樹脂、或者其混合樹脂。料導電填 料’有銀、銅、金、把、銀把合金、碳、錄或其混合物。 其他添加劑和固化劑等被同時混合。 透過上述過程獲得的ICA以大約1〇_的高度被均勻地 施加在諸如玻璃等的平面基板上。在這之後，測試晶片下 降在經由使用覆晶黏合機被施加的ICA層上。透過此過 ° CA被轉移至形成於測試晶片上的金線成形凸塊的末 端0
$成在孟線成形凸塊的末端之ICA係經由將測試晶片 對準有機基板的電極且然後對其施加超音波能量而被硬 化。在此時，ICA的硬化在幾秒中被完成且測試晶片的金 、、·袁成形凸塊係經由在其間被硬化的ICA而被電性連接至有 機基板上的電極。在這之後，底部填充，其係下面的填料， 5140-8488-PF 16 .1306423 被施加在晶片和基板之間底部填充是熱固化，使得使用ica 的覆晶黏合被完成。 在目前的實施例中，其可能透過使用超音波能量增加 硬化脈度並把硬化時間減少幾秒，以取代使用用於硬化！ 的現有的熱固化過程。 圖5顯示未在半導體晶片的各自的1/〇中形成金線成 形凸塊或銅線成形凸塊而直接使用ICA形成聚合物凸塊的 例子。覆晶黏合過程可經由以超音波能量硬化聚合物凸塊 而被完成。 也就是說，ICA $合物凸塊係經自Ια㈣射製程或 網印製程被形成在測試晶片的各自的ί/〇上且然後超音波 能量被施加於形成的凸塊以们CA聚合物凸塊變硬，使得 覆晶黏合被完成。在這之後，用於改進可#性的底部填充 過程可透過把下面的填料充滿在晶片和基板之間被完成。
再者，表面安裝黏合過程在使用ICA的表面安裝裝置 的黏合過程中可經由使用超音波能量被進行。 首先，ICA透過網印製程被均勻地施加在基板電極上。 在這之後’ ICA經由對準在被施力口似的黏合區域中的表 面安裝框架裝置或被動元件裝置且然後在安裝他們時施加 超音波能量而被硬化。如果表面安裝裝置的黏合過輕係瘦 由加上超音波能量、给ICA而被執行，表面安裝黏合過程可 沒有進-步的硬化過程而被完成，不像經由使用現有的取 放裝置安裝表面安裝裝置且，然後進行ICA的硬化過 面安裝黏合過程。
5140-S4SS-PF 17 1306423 m 圖6顯示使用ACA之半導體晶片和基板的黏合過程。 首先，黏合過程在矽晶片上完成以〇2護層並以1μιη的 厚度在其上沉積鋁導線。其執行SiNx或Si〇2護層過程且然 後形成I/O直徑ΙΟΟμιη及間距ΐ80μιη之I/O導孔。用於Aca 黏合的非焊錫凸塊可被形成如下。 金線成形凸塊或銅線成形凸塊經由使用金線裝置以約 60到80 μιη的咼度被形成在I/O襯塾上。在這之後，為了 降低各別的凸塊的高度偏差，平坦化過程被進行。這個過 程是使凸塊的末端部分的變形量當黏合ACA時报大，然後 擴大黏合區域，使得許多導電粒子被黏合在凸塊和基板之 間且在其間電性接觸電阻降低。再者，由於凸塊的高度的 不均句性，當過大的壓力被施加於特定的1/〇時，此過程 可防止晶片的損害。 無電解凸塊可經由使用無電解鎳/銅/金電鍍過程以2〇 到30μιη的高度被形成。在此情況中，鋅酸鹽過程被進行以 .使鋁活化，然後當在適當溫度下把它浸入無電解鎳電鑛液 中適當的時間時，一鎳凸塊被形成。若有必要，具有弱的 硬度之無電解銅層可被形成。在這之後，為了防止鎳和銅 的氧化並且改進電傳導性，薄的鍍金使用無電解鍍金溶液 被執行經由ACA的覆晶黏合過程係經由使用無電解鎳/ 金凸塊或鎳/銅/金凸塊被執行，使得在ACA中的導電粒子 被連接於凸塊和基板電極之間以具有低的接觸電阻。 、此外，在包括測試晶片的各自的I/O之整個區域上形 成Ή/Au的種子層並且把光阻（pR)施加於除了各自的
5140-8488-PF 18 •1306423 襯墊部分以外的部分之後，金電解凸塊可被形成。具有固 定厚度的鍍金凸塊係經由使用電解的鍍金方法被形成。然 後，PR被移除且種子層被蝕刻，使得電解的鍍金凸塊可在 各自的I/O部分内被形成。 使用的基板是厚度lmm的FR-4有機基板，以鎳/銅/ 盃導線做為金導線並且除了 ACA被施加的基板電極外被一 烊錫罩幕保護。 ACA包括絕緣樹脂和導電粒子。在薄膜的情況中，作 鲁為聚合物樹脂，可使用固態環氧樹脂、液態環氧樹脂、苯 氧基樹脂和丁酮/曱苯溶劑的混合物。作為代表性的固化 劑，可使用微膠囊咪唑固化劑。此外，在膠的情況中，固 化劑可被加至液態環氧樹脂。表面處理的導電粒子被同時 混合以產生ACA溶液。如有必要，為了在硬化Αα之後降 低熱膨脹係數，有1μιη或更小的厚度之非導電粒子可被混 合。為了形成薄膜，薄膜係經由刮刀法被形成在隔離紙薄 鲁膜上且被在留在8(rc 一分鐘，以移除溶劑。雖然薄膜的厚 度係根據晶片的凸塊大小變化，其具有1〇到5〇μιη的厚度 以接受不同的凸塊。在勝的情況中，其將液態環氧樹脂和 添加的混合物最佳化以具有適於網印過程或喷塗過程的流 變學特性。 在將通過該過程獲得的ACA施加在有機基板等上之 後，其中形成非焊錫凸塊的晶片被對準。然後，覆晶黏合 經由同時施加熱、壓力和超音波能量至晶片或者僅施加超 音波能量和壓力至晶片而被進行。在基板上施加心的過
5140-8488-PF 19 •1306423 程如下。如果ACA是薄膜類型的ACA，Αα可經由以5kgf /cm2 在80°C將具有薄膜的表面預壓在基板之後移除隔離紙薄膜 而鈿加在基板上。如果ACA是膠類型的ACA，經由使用喷 塗裝置或網印裝置，ACA可用固定的量以想要的形狀施加 在基板上。ACA的溫度在使用超音波振動的熱壓黏合過程 或使用超音波振動的壓縮黏合過程中比在現有的熱壓黏合 過程中更快地上升。如圖7所示，其可發現在用超音波能 量的覆晶黏合結構中，ACA的溫度在2秒内上升至27〇。〇且 達到最大值305。(：，然後在超音波能量被除去之後，溫度 迅速降低。 、另外不同於在現有的熱壓黏合過程中給與過程壓力 為每凸塊100克的情況，雖然給與每凸塊2〇〜5〇克，可獲 '旱穩疋的黏合電阻，使得過程壓力可通過超音波黏合過 耘在使用ACA之覆晶黏合中被顯著減低。 圖8顯示使用NCA之在半導體晶片和基板間的黏合過 程。 、’·τ由在石夕曰B片上完成S i Os護層，以1m的厚度在其上 '儿積銘導線，然後完成SiNx或SiCh護層，-具有1/〇直徑 ΟΟμηι及間距ι8〇μηι之1/〇導孔被形成。因為對於隐黏 合其被直接機械地黏合至基板電極，非焊錫凸塊最好是金 線成形凸塊。 口此至線成形凸塊或銅線成形凸塊也經由使用金線 裝置以60〜80_的高度被形成在I/O襯墊上。秋後一 平坦化過程被執行以減少各凸塊的高度的偏差。：是經由
5140-8488-PF 20 1306423 容許凸塊的末端部分的變形量在NCA黏合中报大以使一黏 合區域變寬。再者，由於凸塊的高度的不均勻性，當過大 的壓力被施加於特定的1/0時，此過程可防止晶片的損害。 另外，晶片和基板容易被排列及黏合，使得黏合區域 可被加寬。 使用的基板是厚度1mm的FR-4有機基板，且具有鎳/ 銅/金導線，並且除了電極外被焊錫罩幕保護。 NCA包括絕緣樹脂和非導電粒子。在薄膜的情況中， 作為聚合物樹脂，可使用固態環氧樹脂、液態環氧樹脂、 苯氧基樹脂和丁町甲苯溶劑的混合物，且作為固化劑，可 使用-微膠囊畔唾固化劑。在踢的情況中，固化劑可被用 在液態環氧樹脂中。在此，為了控制諸如_的熱膨服係 數等的物理特性，經由混合具有低於_的厚度之表面處 理非導電粒子，NCA可被產生。為了形成薄膜，薄膜係: 由刮刀法被形成在隔離紙薄膜上，且被在留在8〇。〇一分 鐘，以移除溶劑。雖然薄膜的厚度係根據晶片的凸塊大: 變化，薄膜具有在1〇〜5〇μπ]的範圍中之厚度，使得不同 的凸塊可被接受。 在將通過該過程獲得的NCA施加在有機基板上之後， 其中形成諸如金線成形凸塊的非焊錫凸塊的測試晶片被對 準。然後，覆晶黏合經由同時施加熱、屢力和超音波能量 至晶片或者僅施加超音波能量和壓力至晶片而被進行此= 基板上施加NCA的過程如下。如果NCA是薄膜類型的心， NCA可經由以5kgf /cm、8(rc將具有薄膜的表面預壓在
5140-8488-PF 21 Ί306423 基板之後移除隔離紙薄膜而施加在基板上。如果N c a是取 類型的NCA，經由使用喷塗裝置或網印裝置，NCA可用固定 的量以想要的形狀施加在基板上。因為NCA較為透明，基 板的電極和晶片的凸塊之對準容易被達成。 NCA的溫度在使用超音波振動的熱壓黏合過程或使用 超音波振動的壓縮黏合過程中，如同在ACA超音波黏合過 程中，比在現有的壓縮過程中可更快地上升。結果，在未 從外部施加熱的狀態中，NCA的硬化僅透過超音波能量被 >迅速完成。另外，不同於將被應用於現有的NCA熱壓黏合 過程的過程壓力施加為每凸塊1〇〇〜15〇克的情況，雖然 給與每凸塊20至70克，經由穩定的NCA黏合可獲得黏合 電阻，使得過程壓力可通過超音波黏合過程在使用NCA之 覆日日黏合中被顯者減低。 圖9顯示使用超音波能量經由ACA或NCA之在一可撓 式基板和一硬式基板之間的黏合過程。
) 對於可撓式基板和硬式基板的電性連接，使用ACF/ACP 或ncf/ncp的黏合方法根據微間距黏合方法的趨勢係從使 用知錫或插座的現有方法提升。因此，對於微間距黏合增 ^對使銅導線直接形成在聚亞醯胺系薄膜上之無黏著劑型 可撓式基板的利用。而且，即使對於黏著劑層存在於現有 的來亞胺基底薄膜和銅導線之間的可撓式基板，經由使 用ACA或者NCA，進行黏合是可能的。因此，在此實施例 中具有攸200_的間距到500μπι的間距之不同間距的益 點著劑型可撓式基板被提供’且具有lmm厚度的fR —4基板
5140-8488-PF 22 1306423 被提供做為硬式基板。 一般的可熱固型將使用厚度40μπι的ACF做為互連材料 且使用8μηι的鍍金鎳粒子做為導電粒子。為了在黏合期間 於可撓式基板與硬式基板間施加超音波能量以及過程壓 力’ OLD或PCB黏合機方法的超音波黏合裝置必須被使用， 而非使用一般的覆晶黏合機。也就是說，ACF的硬化係經 由預壓縮及將ACF施加於硬式基板的黏合區域並在可撓式 基板的電極和硬式基板的電極之間對準，且然後在壓縮過 程令在其上施加熱超音波能量。再者，在可撓式基板和硬 式基板之間的黏合係經由以一般的〇LB或pcB黏合機通過 ACF首先預壓縮可撓式基板和硬式基板，然後把超音波能 量施加於可撓式基板而獲得。 “硬式基板可被加熱且超音波能量可對於黏合過程以脈 衝的方式被施加在使用有效且可靠的ACF之可撓式基板和 硬式基板之間。另彳，各縱向超音波能量和橫向超音波能 量顯然可被獨立地使用。 的，置間黏合時’本發明可除去在硬化黏著劑 ，匕王#外部施_加熱或者施加較低溫的熱的需要。 此外’本發明具有在熱壓黏合過程 壓力的效果。έ士果，士找 月几〒降低過私 六…丛 纟發明之黏合過程可改進良率和生產 力並提供具優良之斑芏 κ千不生座 -耆強度和可靠性的黏合過程。 【圖式簡單說明】 劑的覆晶黏合過 圖1顯不使用傳統的等向導電黏著
5140-8488-PF 23 ♦1306423 程； 圖2顯示使用傳統的非等向導電黏著劑的覆晶黏合過 晶黏合過程； 著劑的覆晶黏 圖3顯示使用傳統的非導電黏著劑的覆 圖4顯示根據本發明之使用等向導電黏 σ過程（若使用凸塊做為黏合的媒介物）； 黏著劑的覆晶黏 ， 電黏著劑的覆晶
圖5顯示根據本發明之使用等向導電 合過程（若不使用凸塊做為黏合的媒介物） 圖6顯示根據本發明之使用非等向導 黏合過程； θ 7顯示在以超音波能量處理非 ^ ^ φ ± 非4向性導電黏著齋 的匱况中根據時間之黏著劑的溫度變化； 圖8顯示根據本發明之使用非 過程；以丨 卜導電黏者劑的覆晶黏令
圖9顯示根據本發明之使用非等向 式-硬式基板黏合過程。 導電黏著劑的可撓 【主要元件符號說明】 益
t\w 5140-8488-PF 24

Claims (1)

1306423 、申請專利範圍： 驟： h —種用於在電氣裝置之間黏合的方法，包括下列步 對準在將被黏合的—上面的電氣裝置和一下面的電氣 、置的一黏合區域的電極；及 e、工由她加超音波能量至在上面的電氣裝置及下面的電 fI置之間_著劑而硬化黏著劑，如此使用來自黏著劑 本身的熱。 、2·如申明專利範圍帛1項的在電氣裝置之間黏合的 /、中黏著劑疋導電黏著劑或者非導電黏著劑。 、3.如申3月專利範圍帛2項的在電氣裝置之間黏合的 方法’其中’導電黏著劑是等向導電黏著劑。 •如申°月專利範圍帛3項的在電氣裝置之間黏合的 方法，其中’等向導電黏著劑包括從由銀、銅、金、碳、 錄、麵、具有-低炫點的鲜錫粉、以及其結合組成料电 中選出者’作為導電的粒子。 方去5·:中申：專利乾圍第3項的在電氣裝置之間黏合的 方法，其中，專向導雷卖卜# 等電黏者劑包括從由環氧樹脂、 脂、丙烯酸樹脂、聚κ船μ u 曰树 選出的一樹脂^ ㈣脂和聚肅組成的群組中 、6·如申請專利範圍第2項的在電氣裝置之間 方法，其中’ f電黏著劑是非等向導電薄膜、 膠。. F寺向導電 7.如申請專利範圍第6項的在電氣裝置之間龜合的 5140-8488-PF 25 -3». 1306423 方法’其中，導電黏著劑包 金的44加v 蜊匕括攸由塗金的聚合物粒子、塗 涂右^塗有低熔點焊錫層的鎳粒子、 坪场層的銅拉子、低熔點焊錫粒子、及其結合 組成的—群組中選出者，作為導電的粒子。 8·如申請專利範圍笫7 τε ΛΛ 方法…“ 的在電氣裴置之間黏合的 電粒子。 職包括尺寸比導電粒子小的非導 9.如申請專利範圍第7 τ5 ΛΑ + 方法^ Λ , 第7項的在電氣裝置之間黏合的 方去，其中，導電黏著劑包括 的 名比Α 枯由辰乳樹脂、聚酯樹脂、 丙烯馱樹脂、聚亞醯胺樹脂 來的一樹脂。 料和㈣樹脂組成的群組中選出 I 〇.如申請專利範圍第？ 方 '丰# . 員的在電氣裝置之間黏合的 方法’其中，非導電黏著劑是— 非導f相或—非導電膠。 II ·如申請專利範圍第 的方本甘士 弟10項的在電氣裝置之間黏合 去，其中，非導電黏著劑包括非導電粒子。 的方味· Γ申°'專利範圍第1 °項的在電氣裝置之間黏合 的方法’其中，非莫雷點益七 σ st 者劑包括從由環氧樹脂、聚酯料 月曰、丙烯酸樹脂、聚亞醯胺樹 u #屮_ Μ & t f月曰和聚碾树脂組成的群組中 選出來的一樹脂。 τ 13.如申請專利範圍第丨Ig沾从+ + γ 的太冰甘士 乐1項的的在電氣裝置之間黏合 ，/ 〃 ’上面和下面的電氣裝置係 一基板或一半導體晶片和—半導體晶片。¥體曰曰片和 “·如申請專利範圍第13項的在 的方法，其中，半導體晶片是之間黏合 疋從由一顯不窃驅動電路Ϊ C、 5140-8488-PF 1306423 一影像感測器ic、一記憶IC、一非記憶IC、一超高頻或 RF IC、一具有矽作為主要組成部分的半導體I [和一化合 物半導體IC組成的群組中選出的一半導體晶片。 15_如申請專利範圍第丨項的的在電氣裝置之間黏合 的方法’其中’在-黏合區域上的電極具有從由金線成形 凸塊、銅線成形凸塊、鍍金的凸塊、鍍銅的凸塊、無電解 鎳/金凸塊、及無電解鎳/銅/金凸塊組成的群組中選出的一 凸塊。 16.如申請專利範圍第卜貝的的在電氣裝置之間黏合 的方法’纟中’上面和下面的電氣裝置是一可撓式基板和 -硬式基板、、或-可撓式基板和—可撓式基板、或一硬式 基板和一硬式基板。 的的在電氣裝置之間黏 一金屬導線被形成在聚 17.如申請專利範圍第16項 合的方法，其中，可撓式基板表示 亞醯·胺基底上。
19.如申請專利範圍第 方法’其中，超音波是縱向 或其結合。 1項的在電氣裝置之間黏合的 超音波振動、水平超音波振動 18 ·如申睛專利範圍第 合的方法’其中’硬式基板係 或矽的一半導體基板。 Μ項的的在電氣裝置之間黏 環氧樹脂/玻璃、陶器、破璃、 20.如申請專利範圍第；| g mo a 1項的的在電氣裝置之間#人 的方法，其中，當超音波 间黏合 或-些的上面和下面的黏合區域。…、錢加於全部 5140-8488-PF
27 ' 1306423 方$ 21· %申4專利範圍第1項的在電氣裝置之間黏a的 方法’其中，超音波振動頻率是2GkHz到⑽恤的 的乂2·，二申請專利範圍第1項的的在電氣裝置之間黏合 ，/八，超音波振動的頻率和振幅根據黏著劑的硬 化程度變化。 23·如申清專利範圍第j項的的在電氣裝置之間黏合 的方法中’超音波能量係、對於確定的時間以預先決定 的頻率或者以-脈衝的形式被固定地施加。
5140-8488-PF
28
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TWI787685B (zh) * 2020-12-11 2022-12-21 力成科技股份有限公司 三維積體電路構裝及其製造方法

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