TWI528384B - 使用各向異性導電材料的連接方法及各向異性導電接合體 - Google Patents

使用各向異性導電材料的連接方法及各向異性導電接合體 Download PDF

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TWI528384B
TWI528384B TW102107605A TW102107605A TWI528384B TW I528384 B TWI528384 B TW I528384B TW 102107605 A TW102107605 A TW 102107605A TW 102107605 A TW102107605 A TW 102107605A TW I528384 B TWI528384 B TW I528384B
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metal portion
hardness
anisotropic conductive
conductive particles
electronic component
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TW102107605A
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English (en)
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TW201337959A (zh
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工藤克哉
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迪睿合股份有限公司
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    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/30—Assembling printed circuits with electric components, e.g. with resistor
    • H05K3/32—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits
    • H05K3/321—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits by conductive adhesives
    • H05K3/323—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits by conductive adhesives by applying an anisotropic conductive adhesive layer over an array of pads
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Description

使用各向異性導電材料的連接方法及各向異性導電接合體
本發明係關於使用各向異性導電材料的連接方法及各向異性導電接合體。
過去，就將電子構件與基板連接的手段而言，已使用將分散導電性粒子的熱硬化性樹脂塗佈於剝離薄膜的帶狀之連接材料(例如，各向異性導電薄膜(ACF,Anisotropic Conductive Film)等之各向異性導電材料)。
舉例來說，此各向異性導電材料係以連接撓性印刷基板(FPC)(或IC晶片之端子)與LCD面板的玻璃基板上形成的氧化銦錫(ITO,Indium Tin Oxide)電極的情形作為開始，被用於與將各種端子彼此接著的同時加以電氣連接的情形。
近年來，電子構件正持續進展更小型化、積體化。因此，前述電子構件具有的電極，其彼此相鄰的電極間的節距正持續變的更小(微細節距(fine pitch))。於微細節距之配線為了對應高電壓及高電流，一般使用具有高硬度的配線(例如，鋁(Al)、銅(Cu)、非結晶氧化銦錫(非結晶ITO)、銦錫氧化物(IZO)等)。然而使用高硬度之配線的情形，有必要於前述各向異性導電材料使用高硬度之導電性粒子。若如此，如習知的各種端子僅由金(Au)而成的情形，因為金為 軟金屬，前述導電性粒子會被埋沒於前述端子中，前述導電性粒子的崩塌不會充分地進行，各向異性導電連接之初期後連接電阻值會變高，而有所謂連接信賴性降低的問題。另一方面，提高前述端子之硬度時，前述導電性粒子之崩塌變的過剩的緣故，各向異性導電連接之期間的粒子排斥變大，有所謂連接信賴性降低的問題。
就防止各種端子埋沒之技術而言，已揭示黏著於第一基板所形成的第一金製突起狀電極、及於第二基板所形成的第二金製突起狀電極的電子裝置，與前述第二金製突起狀電極中的硬度相比，前述第一金製突起狀電極中的硬度係形成較高值者(參照專利文献1)。又，就前述第一金製突起狀電極而言，已揭示於較金更高硬度的金屬之接合面側或全表面上被覆金的電極。
然而，此情形，因直接黏著前述第一金製突起狀電極與前述第二金製突起狀電極，未預定使用前述各向異性導電材料，依然殘留導電性粒子會埋沒於端子，導電性粒子之崩塌未充分進行，各向異性導電連接之初期後連接電阻值變高，連接信賴性會降低的問題，及粒子排斥變大，各向異性導電連接之期間的連接信賴性會降低的問題。
因此，關於微細節距之各向異性導電連接，目前正為冀求提供使用導電性粒子的崩塌會良好地進行、各向異性導電連接之初期後連接電阻值低、且各向異性導電連接之期間的導電性粒子之粒子排斥變小、連接信賴性提升的各向異性導電材料的連接方法及各向異性導電接合體。
[先前技術文獻]
[專利文獻]
[專利文獻1]特開2004-193161號公報
本發明係以解決過去的諸多問題，而達成以下目的為課題。即，本發明係提供使用各向異性導電材料的連接方法及各向異性導電接合體，以於微細節距之各向異性導電連接上，使導電性粒子的崩塌會良好地進行，各向異性導電連接之初期後的連接電阻值低、且各向異性導電連接之期間的導電性粒子之粒子排斥變小、連接信賴性提升。
就用以解決前述課題之手段而言，係如以下所示。即，
<1>一種各向異性導電接合體，其係藉由各向異性導電材料使第一電子構件之端子與第二電子構件之端子連接的各向異性導電接合體，其中：前述第一電子構件之端子具有硬金屬部及較前述硬金屬部更柔軟的軟金屬部；前述各向異性導電材料具有導電性粒子；前述軟金屬部係與前述導電性粒子連接；前述硬金屬部係與前述第一電子構件之配線連接；前述硬金屬部之硬度為Hv100~Hv650；前述軟金屬部之硬度為Hv10~Hv100；前述導電性粒子之粒子硬度為5,880N/mm2~26,460N/mm2。
<2>如前述<1>記載之各向異性導電接合體，其中硬金屬部為平板狀，連接前之硬金屬部之平均厚度為3.0μm~12.0μm，軟金屬部為平板狀，且連接前之軟金屬部之平均厚度為0.1μm~9.0μm。
<3>如前述<1>至<2>項中任一項記載之各向異性導電接合體，其中 連接前之導電性粒子之個數平均粒子徑為3.0μm~10.0μm。
<4>如前述<2>至<3>項中任一項記載之各向異性導電接合體，其中連接前之平板狀之軟金屬部的平均厚度〔A(μm)〕與連接前之導電性粒子之個數平均粒子徑〔D(μm)〕的比(A/D)為0.02~1.00。
<5>如前述<1>至<4>項中任一項記載之各向異性導電接合體，其中硬金屬部之硬度(H)與軟金屬部之硬度(S)的差(H-S)為Hv40以上。
<6>如前述<2>至<5>項中任一項記載之各向異性導電接合體，其中連接前之平板狀之軟金屬部的平均厚度〔A(μm)〕與連接前之導電性粒子之個數平均粒子徑〔D(μm)〕的比(A/D)為0.07~0.70，硬金屬部之硬度(H)與軟金屬部之硬度(S)的差(H-S)為Hv50~Hv350。
<7>一種連接方法，其係使第一電子構件之端子與第二電子構件之端子作各向異性導電連接的連接方法，其中：前述第一電子構件之端子具有硬金屬部及較前述硬金屬部更柔軟的軟金屬部；前述硬金屬部係與前述第一電子構件之配線連接；該方法包含：配置步驟，於前述第一電子構件之端子及前述第二電子構件之端子之任一者上，配置含有導電性粒子的各向異性導電材料；載置步驟，於前述各向異性導電材料上載置另一個前述電子構件；加熱押壓步驟，為使前述軟金屬部與前述導電性粒子連接，將前述第一電子構件及前述第二電子構件之任一者，加以加熱及押壓；前述硬金屬部之硬度為Hv100~Hv650； 前述軟金屬部之硬度為Hv10~Hv100；前述導電性粒子之粒子硬度為5,880N/mm2~26,460N/mm2。
<8>如前述<7>記載之連接方法，其中硬金屬部為平板狀，連接前之硬金屬部之平均厚度為3.0μm~12.0μm，軟金屬部為平板狀，連接前之軟金屬部之平均厚度為0.1μm~9.0μm。
<9>如前述<7>至<8>項中任一項記載之連接方法，其中連接前之導電性粒子之個數平均粒子徑為3.0μm~10.0μm。
<10>如前述<8>至<9>項中任一項記載之連接方法，其中連接前之平板狀之軟金屬部的平均厚度〔A(μm)〕與連接前之導電性粒子之個數平均粒子徑〔D(μm)〕的比(A/D)為0.02~1.00。
<11>如前述<7>至<10>項中任一項記載之連接方法，其中硬金屬部之硬度(H)與軟金屬部之硬度(S)的差(H-S)為Hv40以上。
<12>如前述<8>至<11>項中任一項記載之連接方法，其中連接前之平板狀之軟金屬部的平均厚度〔A(μm)〕與連接前之導電性粒子之個數平均粒子徑〔D(μm)〕的比(A/D)為0.07~0.70，硬金屬部之硬度(H)與軟金屬部之硬度(S)的差(H-S)為Hv50~Hv350。
<13>一種各向異性導電接合體，其係藉由如前述<7>至<12>項中任一項記載之連接方法所製造。
依據本發明，可提供一種各向異性導電材料之連接方法及各向異性導電接合體，其可解決過去的諸多問題，而達成前述目的，於微細節距之各向異性導電連接上，導電性粒子的崩塌會良好地進行，由各向異性導電連接之初期之連 接電阻值低，且各向異性導電連接之期間的導電性粒子之粒子排斥變小，連接信賴性提升。
1‧‧‧第二電子構件
2‧‧‧第二電子構件之端子
3‧‧‧導電性粒子
4‧‧‧各向異性導電材料
5‧‧‧軟金屬部
6‧‧‧硬金屬部
7‧‧‧第一電子構件
8‧‧‧各向異性導電接合體
9‧‧‧基板
第1圖係用以說明本發明所使用的第一電子構件之一例的概略剖面圖。
第2A圖係用以說明本發明之連接方法之一例的概略剖面圖。
第2B圖係用以說明本發明之連接方法之一例的概略剖面圖。
第2C圖係用以說明本發明之連接方法之一例的概略剖面圖。
(各向異性導電接合體)
本發明之各向異性導電接合體係至少具有第一電子構件、第二電子構件及各向異性導電材料，更因應必要，具有其他構件。
前述各向異性導電接合體係藉由前述各向異性導電材料使前述第一電子構件之端子與前述第二電子構件之端子加以連接的接合體。
<第一電子構件>
就前述第一電子構件而言，只要具有端子，且成為使用前述各向異性導電材料的各向異性導電連接之對象的電子構件即可，並未特別限制，可因應目的加以適宜選擇，例如，可舉例IC晶片、標記膠帶(TAB帶)、液晶面板等。就前述IC晶片而言，例如，可舉例平板顯示器(FPD)中的液晶畫面控制用IC晶片等。
-第一電子構件之端子-
就前述第一電子構件之端子而言，其係成為使用前述各向異性導電材料的各向異性導電連接之對象的電子構件之端子，只要具有硬金屬部及較前述硬金 屬部更柔軟的軟金屬部即可，並未特別限制，可因應目的加以適宜選擇。
--硬金屬部--
就前述硬金屬部而言，只要與前述第一電子構件之配線連接，硬度為Hv100~Hv650者即可，並未特別限制，可因應目的加以適宜選擇。
就前述硬金屬部之材質而言，例如，可舉例鎳(Ni)、鈀(Pd)、銅(Cu)、鈦(Ti)、鐵(Fe)、鉻(Cr)、鋁(Al)、銦(In)等。此等可單獨使用一種，亦可併用二種以上。
就前述硬金屬部之硬度而言，Hv100~Hv450為較佳。
--硬度(Hv)--
前述硬度係維克氏硬度(Vickers hardness)。就前述維克氏硬度之測定方法而言，可舉例JIS Z2244記載之方法等。
---硬金屬部之形狀等---
就前述硬金屬部之形狀而言，並未特別限制，可因應目的加以適宜選擇，例如，可舉例平板狀、凹板狀、凸板狀、凹凸板狀、波板狀等。此等中，以平板狀為較佳。
就前述硬金屬部之構造而言，並未特別限制，可因應目的加以適宜選擇，例如，可舉例以一種單獨的構件所形成的構造、以二種以上的構件所形成的構造等。
就前述硬金屬部之平均厚度而言，並未特別限制，可因應目的加以適宜選擇，但於前述各向異性導電接合體之耐久性及各向異性導電連接時之導電性的觀點來看，3.0μm~12.0μm為較佳，5.0μm~11.0μm為更佳，10.0μm~11.0μm為特佳。又，前述硬金屬部之平均厚度係前述第一電子構件之端子與前述第二電子構件之端子連接前所測定的平均厚度。
前述硬金屬部之平均厚度可藉由例如，自前述硬金屬部選擇任意十點，測定各別點的厚度，並藉由算出測定結果的厚度平均值而求得。
--軟金屬部--
就前述軟金屬部而言，只要與導電性粒子連接，且硬度為Hv10~Hv100即可，並未特別限制，可因應目的加以適宜選擇。
就前述軟金屬部之材質而言，例如，可舉例金(Au)、銀(Ag)、焊料等。此等可使用單獨一種，亦可併用二種以上。
就前述硬金屬部之硬度(H)與前述軟金屬部之硬度(S)的差(H-S)而言，Hv40以上為較佳，Hv50~Hv350為更佳。
---軟金屬部之形狀等---
就前述軟金屬部的形狀而言，並未特別限制，可因應目的加以適宜選擇，例如，可舉例平板狀、凹板狀、凸板狀、凹凸板狀、波板狀等。此等中以平板狀為較佳。
就前述軟金屬部之構造而言，並未特別限制，可因應目的加以適宜選擇，例如，可舉例一種單獨之構件所形成的構造、二種以上之構件所形成的構造等。
就前述軟金屬部之平均厚度而言，並未特別限制，可因應目的加以適宜選擇，但於前述各向異性導電接合體之耐久性及各向異性導電連接時之導電性的觀點來看，0.1μm~9.0μm為較佳，0.2μm~7.0μm為更佳，1.0μm~2.0μm為特佳。又，前述軟金屬部之平均厚度係於前述第一電子構件之端子與前述第二電子構件之端子連接之前所測定的平均厚度。
就前述軟金屬部之平均厚度之測定方法而言，例如，自前述軟金屬部選擇任意十點，並測定各別點的厚度，可藉由算出測定結果之厚度之平均值而求得。
<第二電子構件>
就前述第二電子構件而言，只要具有端子，且成為使用前述各向異性導電材料的各向異性導電連接的對象的電子構件即可，並未特別限制，可因應目的加以適宜選擇，例如，可舉例與前述第一電子構件同樣的電子構件、氧化銦錫(ITO)玻璃基板、非結晶氧化銦錫(ITO)玻璃基板、銦錫氧化物(IZO)玻璃基板、其他玻璃圖案基板等。其中以非結晶氧化銦錫(ITO)玻璃基板、銦錫氧化物(IZO)玻璃基板為較佳。
-第二電子構件之端子-
就前述第二電子構件之端子而言，只要成為使用前述各向異性導電材料的各向異性導電連接的對象的電子構件的端子即可，並未特別限制，可因應目的加以適宜選擇，例如，可舉例與前述第一電子構件之端子同樣之端子等。
<各向異性導電材料>
前述各向異性導電材料係至少含有導電性粒子，且更因應必要，含有其他成分。
就前述各向異性導電材料之形態而言，並未特別限制，可因應目的加以適宜選擇，例如，可舉例薄膜狀、液體狀等。
-導電性粒子-
就前述導電性粒子而言，只要粒子硬度為5,880N/mm2~26,460N/mm2(600kgf/mm2~2,700kgf/mm2)即可，並未特別限制，可因應目的加以適宜選擇。
就前述導電性粒子而言，並未特別限制，可因應目的加以適宜 選擇，例如，可舉例金屬粒子(鎳(Ni)、鐵(Fe)、銅(Cu)、鋁(Al)、(Sn)、鉛(Pb)、 鉻(Cr)、鈷(Co)等)、樹脂核鍍金屬粒子等。就前述樹脂核鍍金屬粒子中的樹脂核的材質而言，例如，可舉例二乙烯苯聚合物、聚苯乙烯樹脂、環氧樹脂、苯酚樹脂、丙烯酸樹脂、丙烯腈．苯乙烯(AS)樹脂、苯胍胺樹脂等。此等可使用單獨一種，亦可併用二種以上。
前述導電性粒子之粒子硬度係呈20%K值(壓縮彈性變形特性K20)所求得的粒子硬度，例如，可藉由以下方法來測定。
前述粒子硬度係前述導電性粒子之粒子直徑為20%位移時之壓縮彈性變形特性K20，使用微小壓縮試驗機(MCT-W201，島津製作所股份有限公司製)，以直徑50μm的鑽石製圓柱的平滑端面，壓縮速度0.225g/秒，以壓縮獲得的粒子時之荷重值，測定壓縮位移等，由下述式所求得的值。即，20%K值係測定於粒子之20%位移所必要的荷重及壓縮變形量而求得。
F20：粒子之20%位移所必要的荷重(N)
S20：粒子之20%位移的壓縮變形量(mm)
R：粒子之半徑(mm)
又，前述K20值係普遍且定量地表示粒子之粒子硬度者。
--導電性粒子之形狀等--
就前述導電性粒子之形狀而言，並未特別限制，可因應目的加以適宜選擇。
就前述導電性粒子之個數平均粒子徑而言，並未特別限制，可因應目的加以適宜選擇，但由前述各向異性導電接合體之耐久性及各向異性導電連接時之導電性的觀點來看，3.0μm~12.0μm為較佳。
又，前述導電性粒子之個數平均粒子徑係為各向異性導電連接前所測定的 個數平均粒子徑。
前述導電性粒子之個數平均粒子徑可例如，藉由使用雷射繞射所測定的粒度分佈來測定。
就前述軟金屬部之平均厚度〔A(μm)〕與前述導電性粒子之個數平均粒子徑〔D(μm)〕的比(A/D)而言，並未特別限制，可因應目的加以適宜選擇，但0.02~1.00為較佳，0.07~0.70為更佳。於前述更佳範圍內時，由連接信賴性較優異的觀點來看，係為有利的。
-其他成分-
就前述其他成分而言，並未特別限制，可因應目的加以適宜選擇，例如，可舉例膜形成樹脂、熱硬化性樹脂、硬化劑、矽烷耦合劑等。
--膜形成樹脂--
就前述膜形成樹脂而言，並未特別限制，可因應目的加以適宜選擇，例如，苯氧基樹脂、不飽和聚酯樹脂、飽和聚酯樹脂、胺基甲酸酯樹脂、丁二烯樹脂、聚醯亞胺樹脂、聚醯胺樹脂、聚烯烴樹脂等。前述膜形成樹脂係可使用單獨一種，亦可併用二種以上。此等中，由製膜性、加工性、連接信賴性的觀點來看，以苯氧基樹脂為特佳。
前述苯氧基樹脂係指雙酚A與表氯醇合成的樹脂，可使用適宜合成者，亦可使用市售品。
就前述各向異性導電材料中的膜形成樹脂之含量而言，並未特別限制，可因應目的加以適宜選擇。
--熱硬化性樹脂--
就前述熱硬化性樹脂而言，並未特別限制，可因應目的加以適宜選擇，例 如，環氧樹脂、丙烯酸樹脂等。
---環氧樹脂---
就前述環氧樹脂而言，並未特別限制，可因應目的加以適宜選擇，例如，可舉例雙酚A型環氧樹脂、雙酚F型環氧樹脂、酚醛清漆型環氧樹脂、萘型環氧樹脂、上述此等之變性環氧樹脂等之熱硬化性環氧樹脂等。此等可使用單獨一種，亦可併用二種以上。
就前述各向異性導電材料中的前述環氧樹脂之含量，並未特別限制，可因應目的加以適宜選擇。
---丙烯酸樹脂---
就前述丙烯酸樹脂而言，並未特別限制，可因應目的加以適宜選擇，例如，可舉例(甲基)丙烯酸甲酯、(甲基)丙烯酸乙酯、(甲基)丙烯酸異丙酯、(甲基)丙烯酸異丁酯、含有磷酸基之(甲基)丙烯酸酯、乙二醇二(甲基)丙烯酸酯、二乙二醇二(甲基)丙烯酸酯、三羥甲基丙烷三(甲基)丙烯酸酯、二羥甲基三環癸烷二(甲基)丙烯酸酯、四亞甲基二醇四(甲基)丙烯酸酯、2-羥基-1,3-二(甲基)丙烯醯氧基丙烷、2,2-雙[4-((甲基)丙烯醯氧基甲氧基)苯基]丙烷、2,2-雙[4-((甲基)丙烯醯氧基乙氧基)苯基]丙烷、二環戊烯基(甲基)丙烯酸酯、三環癸基(甲基)丙烯酸酯、參((甲基)丙烯醯氧基乙基)三聚異氰酸酯、胺甲酸酯(甲基)丙烯酸酯、環氧基(甲基)丙烯酸酯等。此等可使用單獨一種，亦可併用二種以上。
就前述各向異性導電材料中的丙烯酸樹脂之含量而言，並未特別限制，可因應目的加以適宜選擇。
--硬化劑--
就前述硬化劑而言，並未特別限制，可因應目的加以適宜選擇，例如，可 舉例陽離子系硬化劑、自由基系硬化劑等。
---陽離子系硬化劑---
就前述陽離子系硬化劑而言，並未特別限制，可因應目的加以適宜選擇，例如，可舉例鋶鹽、鎓鹽、三乙基胺等之烷基胺、吡啶、咪唑等。
前述陽離子系硬化劑係併用作為前述熱硬化性樹脂之環氧樹脂為較佳。
就前述各向異性導電材料中的陽離子系硬化劑之含量而言，並未特別限制，可因應目的加以適宜選擇。
---自由基系硬化劑---
就前述自由基系硬化劑而言，並未特別限制，可因應目的加以適宜選擇，例如，可舉例有機過氧化物等。
就前述有機過氧化物而言，並未特別限制，可因應目的加以適宜選擇，例如，可舉例月桂醯基過氧化物、丁基過氧化物、苄基過氧化物等。
前述自由基系硬化劑係併用作為前述熱硬化性樹脂之丙烯酸樹脂為較佳。
就前述各向異性導電材料中的自由基系硬化劑之含量而言，並未特別限制，可因應目的加以適宜選擇。
--矽烷耦合劑--
就前述矽烷耦合劑而言，並未特別限制，可因應目的加以適宜選擇，例如，可舉例環氧基系矽烷耦合劑、丙烯酸系矽烷耦合劑、硫醇系矽烷耦合劑、胺系矽烷耦合劑等。
就前述各向異性導電材料中的矽烷耦合劑之含量而言，並未特別限制，可因應目的加以適宜選擇。
本發明之各向異性導電接合體係，前述第一電子構件之端子具 有前述硬金屬部及前述軟金屬部，且因前述硬金屬部之硬度、前述軟金屬部之硬度及前述導電性粒子之粒子硬度於特定範圍，藉由使前述導電性粒子適度埋沒於前述軟金屬部，可適度崩塌前述各向異性導電材料所含有的導電性粒子，來抑制崩塌不足及崩塌過剩。如此，可解決過去的問題，即，為使前述軟金屬部與前述各向異性導電材料連接所載置的第一電子構件之端子塞進前述各向異性導電材料之際，前述導電性粒子經由埋沒至前述第一電子構件之端子，不能充分獲得前述導電性粒子的崩塌，會有高電阻的問題；及由於前述導電性粒子過度崩塌，前述導電性粒子的排斥變大，連接信賴性會惡化的問題可被解決。此結果，於微細節距之各向異性導電連接，導電性粒子的崩塌會良好地進行，自各向異性導電連接的初期後連接電阻值會降低，且各向異性導電連接之期間中的導電性粒子之粒子排斥會變小，可使連接信賴性提升。
(使用各向異性導電材料的連接方法)
使用本發明之各向異性導電材料的連接方法係至少包含配置步驟、載置步驟及加熱押壓步驟，更因應必要含有其他步驟。
前述連接方法係使第一電子構件之端子與第二電子構件之端子作各向異性導電連接的連接方法，藉由各向異性導電材料使前述第一電子構件之端子與前述第二電子構件之端子連接的方法。
前述連接方法可適當使用於本發明之各向異性導電接合體之製造。
<配置步驟>
就前述配置步驟而言，於前述第一電子構件之端子及前述第二電子構件之端子之任一者上，配置含有導電性粒子的各向異性導電材料的步驟即可，並未特別限制，可因應目的加以適宜選擇，例如，可舉例貼附、塗佈等。
-第一電子構件-
就前述第一電子構件而言，並未特別限制，可因應目的加以適宜選擇，例如，可舉例與於本發明之各向異性導電接合體之說明所記載的第一電子構件同樣者等。
即，前述第一電子構件具有端子。前述端子係具有硬金屬部及較前述硬金屬部柔軟的軟金屬部。前述硬金屬部係與前述第一電子構件之配線連接。前述硬金屬部之硬度為Hv100~Hv650。前述軟金屬部之硬度為Hv10~Hv100。
-第二電子構件-
就前述第二電子構件而言，並未特別限制，可因應目的加以適宜選擇，例如，可舉例與本發明之各向異性導電接合體之說明所記載的第二電子構件同樣者等。
-各向異性導電材料-
就前述各向異性導電材料而言，只要為具有導電性粒子的各向異性導電材料即可，並未特別限制，可因應目的加以適宜選擇，例如，可舉例與於本發明之各向異性導電接合體之說明所記載的各向異性導電材料同樣者等。
前述導電性粒子之粒子硬度係5,880N/mm2~26,460N/mm2。
於前述配置步驟，在前述第一電子構件之端子上，配置含有前述導電性粒子的各向異性導電材料的情形，使前述軟金屬部與前述各向異性導電材料連接的方式來配置。
<載置步驟>
就前述載置步驟而言，只要將於前述配置步驟未配置的電子構件(另一電子構件)載置於前述各向異性導電材料上的步驟即可，並未特別限制，可因應目的 加以適宜選擇。
於前述載置步驟，使用作為另一電子構件的第一電子構件的情形，前述第一電子構件係為使前述軟金屬部與前述各向異性導電材料連接而被載置。
此時，因前述導電性粒子未被加熱及押壓，前述導電性粒子未崩塌，故未進行各向異性導電連接。
<加熱押壓步驟>
就前述加熱押壓步驟而言，為使前述軟金屬部與前述導電性粒子連接，將前述第一電子構件及前述第二電子構件之任一者加以加熱及押壓的步驟即可，並未特別限制，可因應目的加以適宜選擇，例如，可藉由加熱押壓構件而加熱及押壓。
就前述加熱押壓構件而言，例如，可舉例具有加熱機構的押壓構件等。就具有前述加熱機構的押壓構件而言，例如，可舉例加熱工具等。
就前述加熱之溫度而言，並未特別限制，可因應目的加以適宜選擇，但140℃~200℃為較佳。
就前述押壓之壓力而言，並未特別限制，可因應目的加以適宜選擇，但0.1MPa~80MPa為較佳。
就前述加熱及押壓之時間而言，並未特別限制，可因應目的加以適宜選擇，例如，可舉例0.5秒~120秒。
將第一電子構件之端子與第二電子構件之端子，藉由各向異性導電材料來連接的本發明連接方法之一例係參照圖式來說明。
第2A圖至第2C圖係用以說明藉由本發明之連接方法(各向異性導電接合體之製造方法)製造本發明之各向異性導電接合體的一例之概略剖面圖。首先，於 第二電子構件1之端子2之上，配置含有導電性粒子3的各向異性導電材料4(第2A圖)。接著，於各向異性導電材料4之上載置第一電子構件7使具有硬金屬部6及軟金屬部5的第一電子構件7之端子的軟金屬部5與各向異性導電材料4連接。於此時點，第二電子構件1之端子2與第一電子構件7之端子，因導電性粒子3並未被加熱及押壓，故導電性粒子3未崩塌，又未被各向異性導電連接(第2B圖)。而且，由第一電子構件7之上藉由加熱押壓構件(圖未呈示)加以加熱及押壓下，第一電子構件7之軟金屬部5與各向異性導電材料4所含有的導電性粒子3會接觸，第二電子構件1與第一電子構件7會藉由各向異性導電材料4而被各向異性導電連接，各向異性導電接合體8會被製造(第2C圖)。
[實施例]
以下，說明本發明之實施例，但本發明並未受此等實施例任何限定。
〔硬度(Hv)〕
第一電子構件之端子中的硬金屬部及軟金屬部之硬度係使用維克氏硬度計(品號：VMT-X、Matsuzawa公司製)來測定。
具體而言，使用無電解電鍍法，來製作測定樣品，選擇測定對象之任意十點，依據JIS Z2244記載之測定方法，使用前述維克氏硬度計來測定硬度。藉由算出上述十點中的維克氏硬度之平均值而求得前述硬度。
〔粒子硬度(N/mm2(kgf/mm2))〕
各向異性導電材料所含有的導電性粒子之粒子硬度(20%K值)係藉由以下之方法來測定。
前述粒子硬度係前述導電性粒子之粒子直徑為20%位移時之壓縮彈性變形特性K20，使用微小壓縮試驗機(品號：MCT-W201，島津製作所股份有限公司 製)，以直徑50μm之鑽石製圓柱之平滑端面，以壓縮速度0.225g/秒，測定壓縮時所獲得的粒子之荷重值、壓縮位移等，由下述式而求得。即，20%K值係測定粒子之20%位移所必要的荷重及壓縮變形量而求得。
F20：粒子之20%位移所必要的荷重(N)
S20：粒子之20%位移中的壓縮變形量(mm)
R：粒子之半徑(mm)
〔平均厚度〕
各向異性導電連接前之第一電子構件之端子中的軟金屬部之厚度及硬金屬部之厚度係將第一電子構件之剖面使用金屬顯微鏡(品號：MX51，Olympus股份有限公司製)來觀察而測定。選擇任意之十點，測定各點的厚度，算出測定結果之厚度之平均值，而求得平均厚度。
〔導電性粒子之個數平均粒子徑(D)〕
導電性粒子之個數平均粒子徑係使用雷射繞射而由測定的粒度分佈來測定。
〔硬金屬部及軟金屬部之硬度(Hv)之調整方法〕
如特開2009-71093號公報之段落〔0030〕所記載，進行熱處理，適宜調整凸塊硬度。又，於軟金屬部，使用將硬度調整為Hv10~100的金(Au)。於硬金屬部，使用將硬度調整為Hv100~650的鈀(Pd)。
(導電性粒子1之製造例)
<樹脂核粒子1之製作>
於調整二乙烯苯、苯乙烯、及甲基丙烯酸丁酯之混合比的溶液中，投入作 為聚合開始劑之過氧化苯甲醯基，一邊均勻攪拌一邊進行加熱，藉由進行聚合反應而獲得微粒子分散液。經過濾前述微粒子分散液並減壓乾燥而獲得為微粒子之凝集體的集團體。此外，藉由粉碎前述集團體，製作為樹脂核粒子1之個數平均粒子徑3.0μm之二乙烯苯系樹脂粒子。
<樹脂核鍍鎳粒子(導電性粒子1)之製作>
藉由浸漬法使鈀觸媒負載於個數平均粒子徑3.0μm之二乙烯苯系樹脂粒子(5.0g)。其次，對此樹脂粒子，使用由硫酸鎳六水合物、次亞磷酸鈉、檸檬酸鈉、三乙醇胺及硝酸鉈所調製的無電解鍍鎳液(pH12，電鍍液溫50℃)，進行無電解鍍鎳，製作具有各種磷含量的鍍鎳層(金屬層)於表面形成的導電性粒子1。所獲得的導電性粒子1之個數平均粒子徑為3.0μm，粒子硬度為7,840N/mm2。
(導電性粒子2~3之製造例)
除適宜變更樹脂核粒子1之製作中的均勻攪拌的回轉數以外，與導電性粒子1之製造例同樣地，製作個數平均粒子徑為5.0μm、及粒子硬度為7,840N/mm2的導電性粒子2。
除適宜變更樹脂核粒子1之製作中的均勻攪拌的回轉數以外，與導電性粒子1之製造例同樣地，製作個數平均粒子徑為10.0μm、及粒子硬度為7,840N/mm2的導電性粒子3。
(導電性粒子4~10之製造例)
除適宜變更二乙烯苯、苯乙烯、及甲基丙烯酸丁酯之混合比以外，與導電性粒子1之製造例同樣地，製作個數平均粒子徑為3.0μm、及粒子硬度為3,920N/mm2的導電性粒子4。
除適宜變更二乙烯苯、苯乙烯、及甲基丙烯酸丁酯之混合比以外，與導電 性粒子1之製造例同樣地，製作個數平均粒子徑為3.0μm、及粒子硬度為5,880N/mm2的導電性粒子5。
除適宜變更二乙烯苯、苯乙烯、及甲基丙烯酸丁酯之混合比以外，與導電性粒子1之製造例同樣地，製作個數平均粒子徑為3.0μm、及粒子硬度為13,720N/mm2的導電性粒子6。
除適宜變更二乙烯苯、苯乙烯、及甲基丙烯酸丁酯之混合比以外，與導電性粒子1之製造例同樣地，製作個數平均粒子徑為3.0μm、及粒子硬度為19,600N/mm2的導電性粒子7。
除適宜變更二乙烯苯、苯乙烯、及甲基丙烯酸丁酯之混合比以外，與導電性粒子1之製造例同樣地，製作個數平均粒子徑為3.0μm、及粒子硬度為24,500N/mm2的導電性粒子8。
除適宜變更二乙烯苯、苯乙烯、及甲基丙烯酸丁酯之混合比以外，與導電性粒子1之製造例同樣地，製作個數平均粒子徑為3.0μm、及粒子硬度為26,460N/mm2的導電性粒子9。
除適宜變更二乙烯苯、苯乙烯、及甲基丙烯酸丁酯之混合比以外，與導電性粒子1之製造例同樣地，製作個數平均粒子徑為3.0μm、及粒子硬度為29,400N/mm2的導電性粒子10。
(實施例1)
<各向異性導電材料之製作>
於作為前述膜形成樹脂之苯氧基樹脂(品名：PKHH、Phenoxy Associates公司製)30質量份、作為前述熱硬化性樹脂之萘型環氧樹脂(品名：HP4032D、DIC股份有限公司製)30質量份、作為前述硬化劑之咪唑硬化劑(品名：Novacure 3941HP、旭化成E Materials股份有限公司製)30質量份、及矽烷耦合劑(品名：A-187、Momentive Performance Materials公司製)1質量份所構成的接著劑中，使35質量份的導電性粒子1分散，獲得不揮發分量50質量%之乙酸乙酯-甲苯混合溶液。
其次，將此混合溶液塗佈於厚度50μm之聚酯薄膜(PET薄膜)上後，於80℃之烘箱乾燥5分鐘，製作平均厚度20μm之各向異性導電薄膜(各向異性導電材料)。
<第一電子構件之端子之製作>
使用作為半導體元件之IC晶片(外形1.8mm×20.0mm、厚度0.5mm、凸塊高度12.0μm、凸塊外形85.0μm×30.0μm)。藉由網版印刷於前述半導體元件之凸塊上，將作為硬金屬部之硬度為Hv250的鈀(Pd)以平均厚度成為9.0μm的方式電鍍。接著，於前述硬金屬部上將為軟金屬部之硬度為Hv100的金(Au)以成為平均厚度為3.0μm的方式電鍍，製作具有高度24.0μm、外形97.0μm×42.0μm而成的端子的第一電子構件。
又，將製作的第一電子構件之概略剖面圖示於第1圖。於第1圖，第一電子構件7係依序於基板9上積層平板狀之硬金屬部6及平板狀之軟金屬部5的構造。
<各向異性導電接合體之製造>
於厚度0.7mm之玻璃基板(品號：1737F、Corning公司製)藉由濺鍍使非結晶氧化銦錫製膜的氧化銦錫塗佈玻璃基板(第二電子構件)上，配置實施例1所製作的各向異性導電材料，將實施例1製作的第一電子構件載置於前述各向異性導電材料上，以壓著條件200℃、60MPa、5秒，進行各向異性導電連接，而製 造各向異性導電接合體。
具體而言，於前述氧化銦錫塗佈玻璃基板上配置各向異性導電材料後，進一步於前述各向異性導電材料上暫時固定前述第一電子構件，以加熱工具於25mm寬，使用緩衝材(厚度50μm之Teflon(註冊商標))，由前述第一電子構件上以壓著條件200℃、60MPa、5秒(工具速度30mm/sec、平台溫度40℃)進行各向異性導電連接，而製造各向異性導電接合體。又，前述工具速度係由前述第一電子構件上藉由前述加熱工具加以押壓時的押壓速度。
<評價>
關於製作的各向異性導電材料，進行以下之評價。結果示於表1-1。
〔導電性粒子之崩塌程度〕
於各向異性導電材料所含的導電性粒子，使用金屬顯微鏡(品號：MX51、Olympus股份有限公司製)，測定各向異性導電連接前之導電性粒子之直徑，其次於各向異性導電連接後初期、85℃、85%RH下500小時經過後，測定前述導電性粒子之短徑方向的長度，由下述式(1)求得初期、85℃、85%RH下500小時經過後之導電性粒子之崩塌程度。
導電性粒子之崩塌程度(%)=(各向異性導電連接後之導電性粒子之短徑方向之長度/各向異性導電連接前之導電性粒子之直徑)×100．．．．．式(1)
又，各向異性導電連接後之導電性粒子之短徑方向的長度係作為各向異性導電連接時的第一電子構件與氧化銦錫塗佈玻璃基板正交方向的導電性粒子之長度。
基於上述評價結果，前述導電性粒子之崩塌程度以下列五階段加以評價。
強：導電性粒子之崩塌程度(%)為50%以上
稍強：導電性粒子之崩塌程度(%)為40%以上且低於50%
良好：導電性粒子之崩塌程度(%)為30%以上且低於40%
稍弱：導電性粒子之崩塌程度(%)為20%以上且低於30%
弱：導電性粒子之崩塌程度(%)為低於10%
〔導通電阻值〕
關於實施例1所製造的各向異性導電接合體，使用數位萬用電表(品號：digital multimeter 7555、横河電機股份有限公司製)來測定16ch之端子間的電阻值(導通電阻值、Ω)。具體而言，以四端子法流通電流1mA時，測定初期、85℃、85%RH經過500小時後之電阻值(導通電阻值、Ω)。
(實施例2~6)
除了將於實施例1的第一電子構件之端子的硬金屬部之平均厚度及軟金屬部之平均厚度作成表1-1記載之平均厚度以外，與實施例1同樣地，製作各向異性導電接合體，並實施評價。結果示於表1-1。
(比較例1)
除了未製作於實施例1的第一電子構件之端子中的硬金屬部、並將軟金屬部之平均厚度作成12.0μm以外，與實施例1同樣地，製作各向異性導電接合體，實施評價。結果示於表1-1。
(比較例2)
除了將於實施例1的第一電子構件之端子中的硬金屬部之平均厚度作成12.0μm、且未製作軟金屬部以外，與實施例1同樣地，製作各向異性導電接合體，並實施評價。結果示於表1-1。
[表1-1]
於實施例1~6及比較例1~2，導電性粒子之個數平均粒子徑(D)、導電性粒子之粒子硬度、硬金屬部之硬度、軟金屬部之硬度、及硬金屬部之硬度(H)與軟金屬部之硬度(S)的硬度差(H-S)係如以下所示。
導電性粒子之個數平均粒子徑(D)：3.0μm
導電性粒子之粒子硬度：7,840N/mm2(800kgf/mm2)
硬金屬部之硬度：Hv250
軟金屬部之硬度：Hv100
硬金屬部之硬度(H)與軟金屬部之硬度(S)的硬度差(H-S)：Hv150
(實施例7)
除了將於實施例1的導電性粒子1作為前述導電性粒子2，且將第一電子構件之端子中的硬金屬部的平均厚度作成7.5μm及軟金屬部之平均厚度作成4.5μm以外，與實施例1同樣地，製作各向異性導電接合體，實施評價。結果示於表1-2。
(實施例8~13)
除了將於實施例7的第一電子構件之端子中的硬金屬部之平均厚度及軟金屬部之平均厚度作成表1-2記載之平均厚度以外，與實施例7同樣地，製作各向異性導電接合體，實施評價。結果示於表1-2。
(比較例3)
除了未製作於實施例7的第一電子構件之端子中的硬金屬部，並將軟金屬部之平均厚度作成12.0μm以外，與實施例7同樣地，製作各向異性導電接合體，並實施評價。結果示於表1-2。
(比較例4)
除了將於實施例7的第一電子構件之端子中的硬金屬部之平均厚度作成12.0μm，且未製作軟金屬部以外，與實施例7同樣地，製作各向異性導電接體，並實施評價。結果示於表1-2。
於實施例7~13及比較例3~4，導電性粒子之個數平均粒子徑(D)、導電性粒 子之粒子硬度、硬金屬部之硬度、軟金屬部之硬度、及硬金屬部之硬度(H)與軟金屬部之硬度(S)的硬度差(H-S)係如以下所示。
導電性粒子之個數平均粒子徑(D)：5.0μm
導電性粒子之粒子硬度：7,840N/mm2(800kgf/mm2)
硬金屬部之硬度：Hv250
軟金屬部之硬度：Hv100
硬金屬部之硬度(H)與軟金屬部之硬度(S)的硬度差(H-S)：Hv150
(實施例14)
除了將於實施例1的導電性粒子1作為前述導電性粒子3，且將第一電子構件之端子中的硬金屬部之平均厚度作成3.0μm及軟金屬部之平均厚度作成9.0μm以外，與實施例1同樣地，製作各向異性導電接合體，並實施評價。結果示於表1-3。
(實施例15~23)
除了將於實施例14的第一電子構件之端子中的硬金屬部之平均厚度及軟金屬部之平均厚度作成表1-3記載之平均厚度以外，與實施例14同樣地，製作各向異性導電接合體，並實施評價。結果示於表1-3。
(比較例5)
除了未製作於實施例14的第一電子構件之端子中的硬金屬部，並將軟金屬部之平均厚度作成12.0μm以外，與實施例14同樣地，製作各向異性導電接合體，並實施評價。結果示於表1-3。
(比較例6)
除了將於實施例14的第一電子構件之端子中的硬金屬部之平均厚度作成 12.0μm，並未製作軟金屬部以外，與實施例14同樣地，製作各向異性導電接合體，並實施評價。結果示於表1-3。
於實施例14~23及比較例5~6，導電性粒子之個數平均粒子徑(D)、導電性粒子之粒子硬度、硬金屬部之硬度、軟金屬部之硬度、及硬金屬部之硬度(H)與軟金屬部之硬度(S)的硬度差(H-S)係如以下所示。
導電性粒子之個數平均粒子徑(D)：10.0μm
導電性粒子之粒子硬度：7,840N/mm2(800kgf/mm2)
硬金屬部之硬度：Hv250
軟金屬部之硬度：Hv100
硬金屬部之硬度(H)與軟金屬部之硬度(S)的硬度差(H-S)：Hv150
(比較例7)
除了將於實施例1的導電性粒子1作為前述導電性粒子4，更將第一電子構件之端子中的硬金屬部之平均厚度作成3.0μm及軟金屬部之平均厚度作成9.0μm以外，與實施例1同樣地，製作各向異性導電接合體，並實施評價。結果示於表1-4。
(比較例8~12)
除了將於比較例7的第一電子構件之端子中的硬金屬部之平均厚度及軟金屬部之平均厚度作成表1-4記載之平均厚度以外，與比較例7同樣地，製作各向異性導電接合體，並實施評價。結果示於表1-4。
於表1-4，導電性粒子之個數平均粒子徑(D)、導電性粒子之粒子硬度、硬金屬部之硬度、軟金屬部之硬度、及硬金屬部之硬度(H)與軟金屬部之硬度(S)的硬度差(H-S)係如以下所示。
導電性粒子之個數平均粒子徑(D)：3.0μm
導電性粒子之粒子硬度：3,920N/mm2(400kgf/mm2)
硬金屬部之硬度：Hv250
軟金屬部之硬度：Hv100
硬金屬部之硬度(H)與軟金屬部之硬度(S)的硬度差(H-S)：Hv150
(實施例24)
除了將於實施例4的第一電子構件之端子中的硬金屬部之硬度作成Hv100及軟金屬部之硬度作成Hv10以外，與實施例4同樣地，製作各向異性導電接合體，並評價。結果示於表1-5。
(實施例25~29、及比較例13)
除了將於實施例24的第一電子構件之端子中的軟金屬部之硬度作成表1-5記載之硬度以外，與實施例24同樣地，製作各向異性導電接合體，並實施評價。結果示於表1-5。
於實施例24~29及比較例13，導電性粒子之個數平均粒子徑(D)、導電性粒子之粒子硬度、硬金屬部之平均厚度、軟金屬部之平均厚度、及軟金屬部之平均厚度〔A(μm)〕與導電性粒子之個數平均粒子徑〔D(μm)〕的比(A/D)係如以下所示。
導電性粒子之個數平均粒子徑：3.0μm
導電性粒子之粒子硬度：7,840N/mm2(800kgf/mm2)
硬金屬部之平均厚度：11.0μm
軟金屬部之平均厚度：1.0μm
軟金屬部之平均厚度〔A(μm)〕與導電性粒子之個數平均粒子徑〔D(μm)〕的比(A/D)：0.33
(實施例30)
除了將於實施例4的第一電子構件之端子中的硬金屬部之硬度作成Hv150及軟金屬部之硬度作成Hv100以外，與實施例4同樣地，製作各向異性導電接合體，並實施評價。結果示於表1-6。
(實施例31~35、及比較例14~15)
除了將於實施例30的第一電子構件之端子中的硬金屬部之硬度作成表1-6記載之硬度以外，與實施例30同樣地，製作各向異性導電接合體，並實施評價。結果示於表1-6。
於實施例30~35及比較例14~15，導電性粒子之個數平均粒子徑(D)、導電性粒子之粒子硬度、硬金屬部之平均厚度、軟金屬部之平均厚度、及軟金屬部之平均厚度〔A(μm)〕與導電性粒子之個數平均粒子徑〔D(μm)〕的比(A/D)如以下所示。
導電性粒子之個數平均粒子徑(D)：3.0μm
導電性粒子之粒子硬度：7,840N/mm2(800kgf/mm2)
硬金屬部之平均厚度：11.0μm
軟金屬部之平均厚度：1.0μm
軟金屬部之平均厚度〔A(μm)〕與導電性粒子之個數平均粒子徑〔D(μm)〕的比(A/D)：0.33
(實施例36)
除了將於實施例4第一電子構件之端子中的硬金屬部之硬度作成Hv200及軟金屬部之軟度作成Hv100以外，與實施例4同樣地，製作各向異性導電接合體，並實施評價。結果示於表1-7。
(比較例16~20)
除了將於實施例36的第一電子構件之端子中的軟金屬部之硬度作成表1-7 記載之硬度以外，與實施例36同樣地，製作各向異性導電接合體，並實施評價。結果示於表1-7。
於實施例36及比較例16~20，導電性粒子之個數平均粒子徑(D)、導電性粒子之粒子硬度、硬金屬部之平均厚度、軟金屬部之平均厚度、及軟金屬部之平均厚度〔A(μm)〕與導電性粒子之個數平均粒子徑〔D(μm)〕的比(A/D)如以下所示。
導電性粒子之個數平均粒子徑(D)：3.0μm
導電性粒子之粒子硬度：7,840N/mm2(800kgf/mm2)
硬金屬部之平均厚度：11.0μm
軟金屬部之平均厚度：1.0μm
軟金屬部之平均厚度〔A(μm)〕與導電性粒子之個數平均粒子徑〔D(μm)〕的比(A/D)：0.33
(實施例37)
除了將於實施例4的導電性粒子1作為前述導電性粒子5以外，與實施例4 同樣地，製作各向異性導電接合體，並實施評價。結果示於表1-8。
(實施例38)
除了將於實施例4的導電性粒子1作為前述導電性粒子6以外，與實施例4同樣地，製作各向異性導電接合體，並實施評價。結果示於表1-8。
(實施例39)
除了將於實施例4的導電性粒子1作為前述導電性粒子7以外，與實施例4同樣地，製作各向異性導電接合體，並實施評價。結果示於表1-8。
(實施例40)
除了將於實施例4的導電性粒子1作為前述導電性粒子8以外，與實施例4同樣地，製作各向異性導電接合體，並實施評價。結果示於表1-8。
(實施例41)
除了將於實施例4的導電性粒子1作為前述導電性粒子9以外，與實施例4同樣地，製作各向異性導電接合體，並實施評價。結果示於表1-8。
(比較例21)
除了將於實施例4的導電性粒子1作為前述導電性粒子10以外，與實施例4同樣地，製作各向異性導電接合體，並實施評價。結果示於表1-8。
於實施例37~41及比較例21，導電性粒子之個數平均粒子徑(D)、硬金屬部之硬度、軟金屬部之硬度、硬金屬部之硬度(H)與軟金屬部之硬度(S)的硬度差(H-S)、及軟金屬部之平均厚度〔A(μm)〕與導電性粒子之個數平均粒子徑〔D(μm)〕的比(A/D)如以下所示。
導電性粒子之個數平均粒子徑：3.0μm
硬金屬部之硬度：Hv250
軟金屬部之硬度：Hv100
硬金屬部之硬度(H)與軟金屬部之硬度(S)的硬度差(H-S)：Hv150
軟金屬部之平均厚度〔A(μm)〕與導電性粒子之個數平均粒子徑〔D(μm)〕的比(A/D)：0.33
由表1~1~表1-8可知，實施例1~41之各向異性導電接合體因各 向異性導電材料所含有的導電性粒子之崩塌為適當的，故可確認導通電阻值(Ω)低、連接信賴性優異。尤其，實施例3~5、9~11、16~22、24~28、30~33、36之各向異性導電接合體，導電性粒子之崩塌於85℃、85%RH經過500小時後亦為良好，且導通電阻值(Ω)為0.8~1.顯示較低值，可知更為優異。
另一方面，由表1-1~表1-3可知，比較例1~6之各向異性導電接合體，作為第一電子構件的端子，因使用僅由軟金屬部而成的端子、或僅使用硬金屬部 而成的端子，於85℃、85%RH經過500小時後之導電性粒子之崩塌為弱的，此外，導通電阻值變高。又，由表1-4可知，導電性粒子之粒子硬度為低於5,880N/mm2(600kgf/mm2)時，粒子崩塌即使為良好，導通電阻值會變高。此外，由表1-5~表1-7可知，比較例13~20之各向異性導電接合體的硬金屬部之硬度與前述軟金屬部之硬度上無差異，金屬部之硬度較Hv100大，又硬金屬部之硬度較Hv650大，故於85℃、85%RH經過500小時後之粒子崩塌弱，且導通電阻值變高。
[產業上之利用可能性]
使用本發明之各向異性導電材料的連接方法及各向異性導電接合體因導電性粒子之崩塌會良好地進行、連接電阻值低、且導電性粒子之粒子排斥小、連接信賴性提升，故可適當地利用於各向異性導電材料之連接方法及各向異性導電接合體。
1‧‧‧第二電子構件
2‧‧‧第二電子構件之端子
3‧‧‧導電性粒子
4‧‧‧各向異性導電材料
5‧‧‧軟金屬部
6‧‧‧硬金屬部
7‧‧‧第一電子構件
8‧‧‧各向異性導電接合體

Claims (13)

  1. 一種各向異性導電接合體，其係藉由各向異性導電材料使第一電子構件之端子與第一電子構件之端子連接的各向異性導電接合體，其中：前述第一電子構件之端子具有硬金屬部及較前述硬金屬部柔軟的軟金屬部；前述各向異性導電材料係具有導電性粒子；前述軟金屬部係與前述導電性粒子連接；前述硬金屬部係與前述第一電子構件之配線連接；前述硬金屬部之硬度為Hv100~Hv650；前述軟金屬部之硬度為Hv10~Hv100；前述導電性粒子之粒子硬度為5,880N/mm2~26,460N/mm2。
  2. 如申請專利範圍第1項所述之各向異性導電接合體，其中該硬金屬部為平板狀，且連接前之硬金屬部之平均厚度為3.0μm~12.0μm，軟金屬部為平板狀，連接前之軟金屬部之平均厚度為0.1μm~9.0μm。
  3. 如申請專利範圍第1項所述之各向異性導電接合體，其中連接前之導電性粒子之個數平均粒子徑為3.0μm~10.0μm。
  4. 如申請專利範圍第2項所述之各向異性導電接合體，其中連接前之平板狀之軟金屬部的平均厚度〔A(μm)〕與連接前之導電性粒子之個數平均粒子徑〔D(μm)〕的比(A/D)為0.02~1.00。
  5. 如申請專利範圍第1項所述之各向異性導電接合體，其中硬金屬部之硬度(H)與軟金屬部之硬度(S)的差(H-S)為Hv40以上。
  6. 如申請專利範圍第2項所述之各向異性導電接合體，其中連接前之平板狀之 軟金屬部的平均厚度〔A(μm)〕與連接前之導電性粒子之個數平均粒子徑〔D(μm)〕的比(A/D)為0.07~0.70，硬金屬部之硬度(H)與軟金屬部之硬度(S)的差(H-S)為Hv50~Hv350。
  7. 一種連接方法，其係使第一電子構件之端子與第二電子構件之端子作各向異性導電連接的連接方法，其中：前述第一電子構件之端子具有硬金屬部及較前述硬金屬部柔軟的軟金屬部；前述硬金屬部係與前述第一電子構件之配線連接；該方法包含：配置步驟，於前述第一電子構件之端子及前述第二電子構件之端子之任一者之上，配置含有導電性粒子的各向異性導電材料；載置步驟，於前述各向異性導電材料上載置另一個前述電子構件；加熱押壓步驟，為使前述軟金屬部與前述導電性粒子連接，將前述第一電子構件及前述第二電子構件之任一者加以加熱及押壓；前述硬金屬部之硬度為Hv100~Hv650；前述軟金屬部之硬度為Hv10~Hv100；前述導電性粒子之粒子硬度為5,880N/mm2~26,460N/mm2。
  8. 如申請專利範圍第7項所述之連接方法，其中硬金屬部為平板狀，連接前之硬金屬部之平均厚度為3.0μm~12.0μm，軟金屬部為平板狀，連接前之軟金屬部之平均厚度為0.1μm~9.0μm。
  9. 如申請專利範圍第7項所述之連接方法，其中連接前之導電性粒子之個數平均粒子徑為3.0μm~10.0μm。
  10. 如申請專利範圍第8項所述之連接方法，其中連接前之導電性粒子之個數平均粒子徑〔D(μm)〕與連接前之平板狀之軟金屬部的平均厚度〔A(μm)〕的比(A/D)為0.02~1.00。
  11. 如申請專利範圍第7項所述之連接方法，其中硬金屬部之硬度(H)與軟金屬部之硬度(S)的差(H-S)為Hv40以上。
  12. 如申請專利範圍第8項所述之連接方法，其中連接前之平板狀之軟金屬部的平均厚度〔A(μm)〕與連接前之導電性粒子之個數平均粒子徑〔D(μm)〕的比(A/D)為0.07~0.70，硬金屬部之硬度(H)與軟金屬部之硬度(S)的差(H-S)為Hv50~Hv350。
  13. 一種各向異性導電接合體，其係藉由一種連接方法所製造，其中：該連接方法係使第一電子構件之端子與第二電子構件之端子作各向異性導電連接的連接方法；前述第一電子構件之端子具有硬金屬部及較前述硬金屬部柔軟的軟金屬部；前述硬金屬部係與前述第一電子構件之配線連接；該方法包含：配置步驟，前述第一電子構件之端子及前述第二電子構件之端子之任一者上，配置含有導電性粒子的各向異性導電材料；載置步驟，於前述各向異性導電材料上載置另一個前述電子構件；加熱押壓步驟，為使前述軟金屬部與前述導電性粒子連接，將前述第一電子構件及前述第二電子構件之任一者加以加熱及押壓；前述硬金屬部之硬度為Hv100~Hv650； 前述軟金屬部之硬度為Hv10~Hv100；前述導電性粒子之粒子硬度為5,880N/mm2~26,460N/mm2。
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