WO2013133116A1 - 異方性導電材料を用いた接続方法及び異方性導電接合体 - Google Patents

異方性導電材料を用いた接続方法及び異方性導電接合体 Download PDF

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WO2013133116A1
WO2013133116A1 PCT/JP2013/055335 JP2013055335W WO2013133116A1 WO 2013133116 A1 WO2013133116 A1 WO 2013133116A1 JP 2013055335 W JP2013055335 W JP 2013055335W WO 2013133116 A1 WO2013133116 A1 WO 2013133116A1
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hardness
metal part
anisotropic conductive
electronic component
conductive particles
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PCT/JP2013/055335
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English (en)
French (fr)
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克哉 工藤
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デクセリアルズ株式会社
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Priority to CN201380012602.2A priority Critical patent/CN104145329B/zh
Priority to KR1020147027523A priority patent/KR101994507B1/ko
Publication of WO2013133116A1 publication Critical patent/WO2013133116A1/ja

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    • H01L2224/83905—Combinations of bonding methods provided for in at least two different groups from H01L2224/838 - H01L2224/83904
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    • H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
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    • H01L2924/381—Pitch distance

Definitions

  • the present invention relates to a connection method using an anisotropic conductive material and an anisotropic conductive joined body.
  • a tape-like connection material for example, anisotropic conductive film (ACF)
  • ACF anisotropic conductive film
  • thermosetting resin thermosetting resin in which conductive particles are dispersed
  • This anisotropic conductive material can be used for various purposes, for example, when connecting a terminal of a flexible printed circuit board (FPC) or an IC chip and an ITO (Indium Tin Oxide) electrode formed on a glass substrate of an LCD panel. These terminals are used for bonding and electrically connecting the terminals.
  • FPC flexible printed circuit board
  • ITO Indium Tin Oxide
  • connection resistance value increases from the initial stage of the anisotropic conductive connection, and the connection reliability decreases.
  • the conductive particles are crushed excessively, so that the particle repulsion over time of the anisotropic conductive connection is increased and the connection reliability is lowered.
  • an electronic device in which a first gold protruding electrode formed on a first substrate and a second gold protruding electrode formed on a second substrate are fixed
  • the hardness of the first gold protruding electrode is higher than the hardness of the second gold protruding electrode (see Patent Document 1).
  • money is disclosed as said 1st gold
  • An object of the present invention is to provide a connection method using an anisotropic conductive material and an anisotropic conductive joined body, in which particle repulsion of conductive particles is reduced and connection reliability is improved.
  • Means for solving the problems are as follows. That is, ⁇ 1> An anisotropic conductive joint in which a terminal of a first electronic component and a terminal of a second electronic component are connected via an anisotropic conductive material, The terminal of the first electronic component has a hard metal part and a soft metal part softer than the hard metal part, The anisotropic conductive material has conductive particles; The soft metal portion is in contact with the conductive particles; The hard metal portion is in contact with the wiring of the first electronic component; The hardness of the hard metal part is Hv100 to Hv650, The soft metal part has a hardness of Hv10 to Hv100, The anisotropic conductive joint is characterized in that the conductive particles have a hardness of 5,880 N / mm 2 to 26,460 N / mm 2 .
  • the hard metal portion has a flat plate shape, and the average thickness of the hard metal portion before connection is 3.0 ⁇ m to 12.0 ⁇ m
  • ⁇ 4> The ratio (A / D) between the average thickness [A ( ⁇ m)] of the flat soft metal part before connection and the number average particle diameter [D ( ⁇ m)] of the conductive particles before connection,
  • ⁇ 5> The anisotropy according to any one of ⁇ 1> to ⁇ 4>, wherein a difference (HS) between the hardness (H) of the hard metal portion and the hardness (S) of the soft metal portion is Hv40 or more.
  • ⁇ 6> The ratio (A / D) between the average thickness [A ( ⁇ m)] of the flat soft metal part before connection and the number average particle diameter [D ( ⁇ m)] of the conductive particles before connection, 0.07 to 0.70,
  • a connection method for anisotropically connecting the terminals of the first electronic component and the terminals of the second electronic component The terminal of the first electronic component has a hard metal part and a soft metal part softer than the hard metal part, The hard metal portion is in contact with the wiring of the first electronic component; An arrangement step of arranging an anisotropic conductive material containing conductive particles on either one of the terminal of the first electronic component and the terminal of the second electronic component; A placing step of placing the other electronic component on the anisotropic conductive material; A heating and pressing step of heating and pressing either the first electronic component or the second electronic component so that the soft metal portion and the conductive particles are in contact with each other,
  • the hardness of the hard metal part is Hv100 to Hv650,
  • the soft metal part has a hardness of Hv10 to Hv100
  • the connection method is characterized in that the conductive particles have a hardness of 5,880 N / mm 2 to 26,460 N / mm 2 .
  • the hard metal portion has a flat plate shape, and the average thickness of the hard metal portion before connection is 3.0 ⁇ m to 12.0 ⁇ m
  • connection method according to any one of ⁇ 8> to ⁇ 9>, wherein the connection method is 0.02 to 1.00.
  • ⁇ 11> The connection method according to any one of ⁇ 7> to ⁇ 10>, wherein the difference (HS) between the hardness (H) of the hard metal part and the hardness (S) of the soft metal part is Hv40 or more. It is.
  • ⁇ 12> The ratio (A / D) between the average thickness [A ( ⁇ m)] of the flat soft metal part before connection and the number average particle diameter [D ( ⁇ m)] of the conductive particles before connection, 0.07 to 0.70,
  • ⁇ 13> An anisotropic conductive joined body produced by the connection method according to any one of ⁇ 7> to ⁇ 12>.
  • connection method of anisotropic conductive material and anisotropic conductive joint in which the connection resistance value is low from the initial stage, the particle repulsion of the conductive particles over time of anisotropic conductive connection is reduced, and the connection reliability is improved Can be provided.
  • FIG. 1 is a schematic cross-sectional view for explaining an example of a first electronic component used in the present invention.
  • FIG. 2A is a schematic cross-sectional view for explaining an example of the connection method of the present invention.
  • FIG. 2B is a schematic cross-sectional view for explaining an example of the connection method of the present invention.
  • FIG. 2C is a schematic cross-sectional view for explaining an example of the connection method of the present invention.
  • the anisotropic conductive joint of the present invention includes at least a first electronic component, a second electronic component, and an anisotropic conductive material, and further includes other members as necessary.
  • the anisotropic conductive joined body is a joined body in which the terminal of the first electronic component and the terminal of the second electronic component are connected via the anisotropic conductive material.
  • the first electronic component is not particularly limited as long as it is an electronic component that has terminals and is an object of anisotropic conductive connection using the anisotropic conductive material, and is appropriately selected according to the purpose.
  • an IC chip, a TAB tape, a liquid crystal panel, and the like can be given.
  • the IC chip include a liquid crystal screen control IC chip in a flat panel display (FPD).
  • the terminal of the first electronic component is a terminal of an electronic component that is a target of anisotropic conductive connection using the anisotropic conductive material, and is a hard metal portion and a soft metal portion that is softer than the hard metal portion. If it has, there will be no restriction
  • the hard metal portion is in contact with the wiring of the first electronic component and has a hardness of Hv100 to Hv650, and is not particularly limited and can be appropriately selected depending on the purpose.
  • Examples of the material of the hard metal part include Ni, Pd, Cu, Ti, Fe, Cr, Al, and In. These may be used individually by 1 type and may use 2 or more types together.
  • the hardness of the hard metal part is preferably Hv100 to Hv450.
  • the hardness is Vickers hardness. Examples of the method for measuring the Vickers hardness include the method described in JIS Z2244.
  • Shape of hard metal part There is no restriction
  • limiting in particular as a structure of the said hard metal part According to the objective, it can select suitably, For example, the structure formed with the 1 type single member, the structure formed with 2 or more types of members, etc. Can be mentioned.
  • the average thickness of the hard metal part is not particularly limited and may be appropriately selected depending on the purpose.
  • the average thickness of the said hard metal part is an average thickness measured before the terminal of a said 1st electronic component and the terminal of a said 2nd electronic component connect.
  • the average thickness of the hard metal part can be obtained, for example, by selecting arbitrary 10 points from the hard metal part, measuring the thickness at each point, and calculating the average value of the thicknesses of the measurement results.
  • the soft metal portion is not particularly limited as long as it is in contact with the conductive particles and has a hardness of Hv10 to Hv100, and can be appropriately selected according to the purpose.
  • Examples of the material of the soft metal part include Au, Ag, and solder. These may be used individually by 1 type and may use 2 or more types together.
  • the difference (HS) between the hardness (H) of the hard metal part and the hardness (S) of the soft metal part is preferably Hv40 or more, more preferably Hv50 to Hv350.
  • the average thickness of the soft metal part is an average thickness measured before the terminal of the first electronic component and the terminal of the second electronic component are connected.
  • a method for measuring the average thickness of the soft metal part for example, any 10 points are selected from the soft metal part, the thickness at each point is measured, and the average value of the thicknesses of the measurement results is calculated. Can do.
  • the second electronic component is not particularly limited as long as it is an electronic component that has a terminal and is an object of anisotropic conductive connection using the anisotropic conductive material, and is appropriately selected according to the purpose.
  • Examples thereof include electronic components similar to the first electronic component, ITO glass substrate, amorphous ITO glass substrate, IZO glass substrate, and other glass pattern substrates. Among these, an amorphous ITO glass substrate and an IZO glass substrate are preferable.
  • the terminal of the second electronic component is not particularly limited as long as it is a terminal of an electronic component that is an object of anisotropic conductive connection using the anisotropic conductive material, and is appropriately selected according to the purpose.
  • a terminal similar to the terminal of the first electronic component may be used.
  • the anisotropic conductive material contains at least conductive particles, and further contains other components as necessary.
  • the conductive particles are not particularly limited as long as they have a hardness of 5,880 N / mm 2 to 26,460 N / mm 2 (600 kgf / mm 2 to 2,700 kgf / mm 2 ), and are appropriately selected according to the purpose. can do.
  • said electroconductive particle there is no restriction
  • metal particles Ni, Fe, Cu, Al, Sn, Pb, Cr, Co etc.
  • resin core metal plating And particles examples of the material of the resin core in the resin core metal plating particles include divinylbenzene polymer, polystyrene resin, epoxy resin, phenol resin, acrylic resin, acrylonitrile / styrene (AS) resin, and benzoguanamine resin. These may be used individually by 1 type and may use 2 or more types together.
  • the hardness of the conductive particles is a hardness obtained as a 20% K value (compression elastic deformation characteristic K 20 ), and can be measured, for example, by the following method.
  • the hardness is a compression elastic deformation characteristic K 20 when the particle diameter of the conductive particles is displaced by 20%, and is made of diamond having a diameter of 50 ⁇ m using a micro compression tester (MCT-W201, manufactured by Shimadzu Corporation). It is a value obtained from the following equation by measuring the load value, compression displacement and the like when the obtained particles are compressed at a smooth end face of a cylinder at a compression rate of 0.225 g / sec. That is, the 20% K value is obtained by measuring the load and the amount of compressive deformation necessary for 20% displacement of particles.
  • K 20 (3 / ⁇ 2) ⁇ (S 20 ⁇ 3/2 ) ⁇ (R ⁇ 1/2 ) ⁇ F 20
  • F 20 Load required for 20% displacement of particles (N)
  • S 20 amount of compressive deformation at 20% displacement of particles (mm)
  • R radius of particle (mm)
  • the K 20 value represents the hardness of the particles universally and quantitatively.
  • the number average particle diameter of the conductive particles is not particularly limited and can be appropriately selected according to the purpose. However, the durability of the anisotropic conductive joint and the conductivity at the time of anisotropic conductive connection can be selected. In view of this, 3.0 to 12.0 ⁇ m is preferable.
  • the number average particle size of the conductive particles is a number average particle size measured before anisotropic conductive connection. The number average particle diameter of the conductive particles can be measured from, for example, a particle size distribution measured using laser diffraction.
  • the ratio (A / D) between the average thickness [A ( ⁇ m)] of the soft metal part and the number average particle diameter [D ( ⁇ m)] of the conductive particles is not particularly limited, and is appropriately determined depending on the purpose. Although it can be selected, it is preferably 0.02 to 1.00, more preferably 0.07 to 0.70. When the ratio is within the more preferable range, it is advantageous in that the connection reliability is more excellent.
  • Film-forming resin-- There is no restriction
  • the film forming resin may be used alone or in combination of two or more. Among these, phenoxy resin is particularly preferable from the viewpoints of film formability, processability, and connection reliability.
  • the said phenoxy resin is resin synthesize
  • thermosetting resin- There is no restriction
  • epoxy resin there is no restriction
  • acrylic resin There is no restriction
  • the curing agent is not particularly limited and may be appropriately selected depending on the intended purpose. Examples thereof include a cationic curing agent and a radical curing agent.
  • curing agent there is no restriction
  • the radical curing agent is preferably used in combination with an acrylic resin as the thermosetting resin.
  • the silane coupling agent is not particularly limited and may be appropriately selected depending on the intended purpose. Examples thereof include an epoxy silane coupling agent, an acrylic silane coupling agent, a thiol silane coupling agent, and an amine silane. A coupling agent etc. are mentioned. There is no restriction
  • the terminal of the first electronic component has the hard metal portion and the soft metal portion, and the hardness of the hard metal portion, the hardness of the soft metal portion, and Since the hardness of the conductive particles is in a specific range, the conductive particles contained in the anisotropic conductive material are appropriately crushed by appropriately burying the conductive particles in the soft metal portion. It is possible to suppress crushing shortage and excessive crushing. By doing so, the conventional problem, that is, when the terminal of the first electronic component placed so that the soft metal portion and the anisotropic conductive material are in contact with each other is pushed into the anisotropic conductive material.
  • the conductive particles are buried in the terminals of the first electronic component, the conductive particles are not sufficiently crushed, resulting in high resistance, and the conductive particles are crushed. By being too much, the repulsion of the said electroconductive particle becomes large and the problem that connection reliability deteriorates can be eliminated. As a result, in the anisotropic conductive connection of fine pitch, the conductive particles are crushed well, the connection resistance value is low from the initial stage of the anisotropic conductive connection, and the conductive particles over time of the anisotropic conductive connection The particle repulsion is reduced, and the connection reliability can be improved.
  • connection method using the anisotropic conductive material of the present invention includes at least an arrangement step, a placement step, and a heating and pressing step, and further includes other steps as necessary.
  • the connection method is a connection method in which a terminal of a first electronic component and a terminal of a second electronic component are anisotropically conductively connected, and the first electronic component is interposed via an anisotropic conductive material. And a terminal of the second electronic component.
  • the said connection method can be used suitably for manufacture of the anisotropic conductive assembly of this invention.
  • the placement step is a step of placing the anisotropic conductive material containing conductive particles on one of the terminal of the first electronic component and the terminal of the second electronic component.
  • the placement step can be appropriately selected according to the purpose. Examples thereof include sticking and coating.
  • the first electronic component has a terminal.
  • the terminal includes a hard metal portion and a soft metal portion that is softer than the hard metal portion.
  • the hard metal portion is in contact with the wiring of the first electronic component.
  • the hardness of the hard metal part is Hv100 to Hv650.
  • the soft metal part has a hardness of Hv10 to Hv100.
  • the anisotropic conductive material is not particularly limited as long as it is an anisotropic conductive material having conductive particles, and can be appropriately selected according to the purpose.
  • the anisotropic conductive joint of the present invention Examples similar to the anisotropic conductive material described in the description of the above.
  • the conductive particles have a hardness of 5,880 N / mm 2 to 26,460 N / mm 2 .
  • the soft metal portion, the anisotropic conductive material are arranged to touch.
  • the placement step is not particularly limited as long as it is a step of placing the electronic component (the other electronic component) that is not the electronic component placed in the placement step on the anisotropic conductive material. It can be selected as appropriate according to the conditions.
  • the first electronic component when used as the other electronic component, the first electronic component is placed so that the soft metal portion and the anisotropic conductive material are in contact with each other. Is done. At this time, since the conductive particles are not heated and pressed and the conductive particles are not crushed, anisotropic conductive connection is not performed.
  • the heating and pressing step is a step of heating and pressing either the first electronic component or the second electronic component so that the soft metal portion and the conductive particles are in contact with each other.
  • a heating press member examples include a pressing member having a heating mechanism.
  • the pressing member having the heating mechanism examples include a heat tool.
  • the heating temperature is not particularly limited and may be appropriately selected depending on the intended purpose, but is preferably 140 ° C. to 200 ° C.
  • the pressing pressure is not particularly limited and may be appropriately selected depending on the intended purpose, but is preferably 0.1 MPa to 80 MPa.
  • the heating and pressing time is not particularly limited and may be appropriately selected depending on the intended purpose. Examples thereof include 0.5 seconds to 120 seconds.
  • connection method of the present invention for connecting the terminal of the first electronic component and the terminal of the second electronic component via an anisotropic conductive material
  • FIG. 2C are schematic cross-sectional views for explaining an example of manufacturing the anisotropic conductive joint of the present invention by the connection method of the present invention (manufacturing method of the anisotropic conductive joint).
  • an anisotropic conductive material 4 containing conductive particles 3 is disposed on the terminal 2 of the second electronic component 1 (FIG. 2A).
  • the soft metal portion 5 of the terminal of the first electronic component 7 having the hard metal portion 6 and the soft metal portion 5 is in contact with the anisotropic conductive material 4.
  • Hardness (Hv) The hardness of the hard metal part and the soft metal part in the terminal of the first electronic component was measured using a Vickers hardness meter (product number: VMT-X, manufactured by Matsuzawa). Specifically, a measurement sample was prepared using an electroless plating method, arbitrary 10 points to be measured were selected, and the hardness was measured using the Vickers hardness tester according to the measurement method described in JIS Z2244. . The said hardness was calculated
  • the hardness (20% K value) of the conductive particles contained in the anisotropic conductive material was measured by the following method.
  • the hardness is the compressive elastic deformation characteristic K 20 when the particle diameter of the conductive particles is displaced by 20%, and the diameter is 50 ⁇ m using a micro compression tester (product number: MCT-W201, manufactured by Shimadzu Corporation).
  • the load value, compression displacement, and the like when the obtained particles were compressed at a compression speed of 0.225 g / second on a smooth end face of a diamond cylinder were measured and obtained from the following formula. That is, the 20% K value was obtained by measuring the load and the amount of compressive deformation necessary for 20% displacement of particles.
  • K 20 (3 / ⁇ 2) ⁇ (S 20 ⁇ 3/2 ) ⁇ (R ⁇ 1/2 ) ⁇ F 20 F 20 : Load required for 20% displacement of particles (N) S 20 : amount of compressive deformation at 20% displacement of particles (mm) R: radius of particle (mm)
  • the number average particle diameter is 5.0 ⁇ m and the hardness is 7,840 N / mm 2 in the same manner as in the production example of the conductive particles 1 except that the number of rotations for uniform stirring in the production of the resin core particles 1 is appropriately changed.
  • a certain conductive particle 2 was produced.
  • the number average particle diameter is 10.0 ⁇ m and the hardness is 7,840 N / mm 2 in the same manner as in the production example of the conductive particles 1 except that the number of rotations of uniform stirring in the production of the resin core particles 1 is appropriately changed.
  • a certain conductive particle 3 was produced.
  • the number average particle diameter is 3.0 ⁇ m and the hardness is 3,920 N / mm 2 in the same manner as in the production example of the conductive particles 1 except that the mixing ratio of divinylbenzene, styrene, and butyl methacrylate is appropriately changed.
  • Conductive particles 4 were produced.
  • the number average particle diameter is 3.0 ⁇ m and the hardness is 5,880 N / mm 2 in the same manner as in the production example of the conductive particles 1 except that the mixing ratio of divinylbenzene, styrene, and butyl methacrylate is appropriately changed.
  • Conductive particles 5 were produced.
  • the number average particle diameter is 3.0 ⁇ m and the hardness is 13,720 N / mm 2 in the same manner as in the production example of the conductive particles 1 except that the mixing ratio of divinylbenzene, styrene, and butyl methacrylate is appropriately changed.
  • Conductive particles 6 were produced.
  • the number average particle diameter is 3.0 ⁇ m and the hardness is 19,600 N / mm 2 in the same manner as in the production example of the conductive particles 1 except that the mixing ratio of divinylbenzene, styrene, and butyl methacrylate is appropriately changed.
  • Conductive particles 7 were produced.
  • the number average particle diameter is 3.0 ⁇ m and the hardness is 24,500 N / mm 2 in the same manner as in the production example of the conductive particles 1 except that the mixing ratio of divinylbenzene, styrene, and butyl methacrylate is appropriately changed.
  • Conductive particles 8 were produced.
  • the number average particle diameter is 3.0 ⁇ m and the hardness is 26,460 N / mm 2 in the same manner as in the production example of the conductive particles 1 except that the mixing ratio of divinylbenzene, styrene, and butyl methacrylate is appropriately changed.
  • Conductive particles 9 were produced.
  • the number average particle diameter is 3.0 ⁇ m and the hardness is 29,400 N / mm 2 in the same manner as in the production example of the conductive particles 1 except that the mixing ratio of divinylbenzene, styrene, and butyl methacrylate is appropriately changed.
  • Conductive particles 10 were produced.
  • Example 1 ⁇ Production of anisotropic conductive material> 30 parts by mass of phenoxy resin (product name: PKHH, manufactured by Phenoxy Associates) as the film forming resin, 30 parts by mass of naphthalene type epoxy resin (product name: HP4032D, manufactured by DIC Corporation) as the thermosetting resin, 30 parts by mass of an imidazole curing agent (product name: Novacure 3941HP, manufactured by Asahi Kasei E-Materials Co., Ltd.) as a curing agent, and 1 mass of silane coupling agent (product name: A-187, manufactured by Momentive Performance Materials)
  • the conductive particles 1 were dispersed in 35 parts by mass in an adhesive composed of 5 parts by mass to obtain an ethyl acetate-toluene mixed solution having a nonvolatile content of 50% by mass.
  • this mixed solution was applied onto a PET film having a thickness of 50 ⁇ m, and then dried in an oven at 80 ° C. for 5 minutes to produce an anisotropic conductive film (anisotropic conductive material) having an average thickness of 20 ⁇ m.
  • an IC chip (outer shape 1.8 mm ⁇ 20.0 mm, thickness 0.5 mm, bump height 12.0 ⁇ m, bump outer shape 85.0 ⁇ m ⁇ 30.0 ⁇ m) was used.
  • palladium (Pd) having a hardness of Hv250 as a hard metal part was plated by screen printing so as to have an average thickness of 9.0 ⁇ m.
  • a first electronic component having a terminal made of was produced.
  • a schematic cross-sectional view of the manufactured first electronic component is shown in FIG. In FIG. 1, the first electronic component 7 has a structure in which a flat hard metal portion 6 and a flat soft metal portion 5 are laminated on a substrate 9 in this order.
  • Example 1 Anisotropic conductivity prepared in Example 1 on an ITO-coated glass substrate (second electronic component) in which a non-crystalline ITO film was formed by sputtering on a 0.7 mm thick glass substrate (product number: 1737F, manufactured by Corning) The material was placed, the first electronic component produced in Example 1 was placed on the anisotropic conductive material, and anisotropic conductive connection was performed under pressure bonding conditions of 200 ° C., 60 MPa for 5 seconds. A conductive assembly was produced.
  • second electronic component ITO-coated glass substrate
  • product number: 1737F manufactured by Corning
  • the first electronic component is temporarily fixed on the anisotropic conductive material, and a cushioning material having a heat tool width of 25 mm is provided.
  • Teflon registered trademark
  • the anisotropic conductive joined body was manufactured.
  • the tool speed is a speed at which the tool is pushed from above the first electronic component by the heat tool.
  • the diameter of the conductive particles before anisotropic conductive connection is measured using a metal microscope (product number: MX51, manufactured by Olympus Corporation), and then anisotropic Measure the length of the conductive particles in the short direction after the lapse of 500 hours at 85 ° C. and 85% RH at the initial stage after conductive conductive connection, and at the initial and 85 ° C. and 85% RH from the following formula (1). The degree of crushing of the conductive particles after 500 hours was determined.
  • Crushing state of conductive particles (%) (length of conductive particles after anisotropic conductive connection in the short direction / diameter of conductive particles before anisotropic conductive connection) ⁇ 100 ..Formula (1)
  • the length in the short direction of the conductive particles after anisotropic conductive connection is the length of the conductive particles in the direction orthogonal to the first electronic component and the ITO coated glass substrate at the time of anisotropic conductive connection. Say it. Based on the evaluation results, the degree of collapse of the conductive particles was evaluated in the following five stages.
  • the degree of crushing of conductive particles (%) is 50% or more
  • Slightly strong The degree of crushing of conductive particles (%) is 40% or more and less than 50%
  • Good The degree of crushing of conductive particles (%) is 30% or more 40
  • Slightly weak The degree of crushing of conductive particles (%) is 20% or more and less than 30%
  • Weak The degree of crushing of conductive particles (%) is less than 10%
  • Example 2 (Examples 2 to 6) In Example 1, except that the average thickness of the hard metal part and the average thickness of the soft metal part in the terminal of the first electronic component were the average thicknesses described in Table 1-1, An anisotropic conductive assembly was prepared and evaluated. The results are shown in Table 1-1.
  • Example 1 the anisotropic conductive bonding was performed in the same manner as in Example 1 except that the hard metal part in the terminal of the first electronic component was not produced and the average thickness of the soft metal part was 12.0 ⁇ m. A body was prepared and evaluated. The results are shown in Table 1-1.
  • Example 2 In Example 1, the anisotropic conductive joint was obtained in the same manner as in Example 1 except that the average thickness of the hard metal part in the terminal of the first electronic component was 12.0 ⁇ m and no soft metal part was produced. Were prepared and evaluated. The results are shown in Table 1-1.
  • the number average particle diameter (D) of the conductive particles, the hardness of the conductive particles, the hardness of the hard metal part, the hardness of the soft metal part, and the hardness of the hard metal part is as follows.
  • Hardness of soft metal part Hv100
  • Hv150 Hardness difference between the hardness (H) of the hard metal part and the hardness (S) of the soft metal part: Hv150
  • Example 7 In Example 1, the conductive particles 1 were the conductive particles 2, and the average thickness of the hard metal part in the terminal of the first electronic component was 7.5 ⁇ m and the average thickness of the soft metal part was 4.5 ⁇ m. Except for the above, an anisotropic conductive joined body was prepared and evaluated in the same manner as in Example 1. The results are shown in Table 1-2.
  • Example 7 the average thickness of the hard metal part and the average thickness of the soft metal part in the terminal of the first electronic component were the same as in Example 7 except that the average thickness described in Table 1-2 was used. An anisotropic conductive assembly was prepared and evaluated. The results are shown in Table 1-2.
  • Example 7 (Comparative Example 3) In Example 7, the anisotropic conductive bonding was performed in the same manner as in Example 7 except that the hard metal portion in the terminal of the first electronic component was not manufactured and the average thickness of the soft metal portion was 12.0 ⁇ m. A body was prepared and evaluated. The results are shown in Table 1-2.
  • Example 7 (Comparative Example 4) In Example 7, the anisotropic conductive joint was obtained in the same manner as in Example 7 except that the average thickness of the hard metal part in the terminal of the first electronic component was 12.0 ⁇ m and no soft metal part was produced. Were prepared and evaluated. The results are shown in Table 1-2.
  • the number average particle diameter (D) of the conductive particles, the hardness of the conductive particles, the hardness of the hard metal part, the hardness of the soft metal part, and the hardness of the hard metal part is as follows.
  • Hardness of soft metal part Hv100
  • Hv150 Hardness difference between the hardness (H) of the hard metal part and the hardness (S) of the soft metal part: Hv150
  • Example 14 In Example 1, the conductive particles 1 are the conductive particles 3, and the average thickness of the hard metal portion in the terminal of the first electronic component is 3.0 ⁇ m, and the average thickness of the soft metal portion is 9.0 ⁇ m. Except for the above, an anisotropic conductive joined body was prepared and evaluated in the same manner as in Example 1. The results are shown in Table 1-3.
  • Example 14 In Example 14, except that the average thickness of the hard metal part and the average thickness of the soft metal part in the terminal of the first electronic component were the average thicknesses described in Table 1-3, An anisotropic conductive assembly was prepared and evaluated. The results are shown in Table 1-3.
  • Example 14 the anisotropic conductive bonding was performed in the same manner as in Example 14 except that the hard metal portion in the terminal of the first electronic component was not manufactured and the average thickness of the soft metal portion was 12.0 ⁇ m. A body was prepared and evaluated. The results are shown in Table 1-3.
  • Example 14 the anisotropic conductive joint was obtained in the same manner as in Example 14 except that the average thickness of the hard metal portion in the terminal of the first electronic component was 12.0 ⁇ m and no soft metal portion was produced. Were prepared and evaluated. The results are shown in Table 1-3.
  • the number average particle diameter (D) of the conductive particles, the hardness of the conductive particles, the hardness of the hard metal part, the hardness of the soft metal part, and the hardness of the hard metal part is as follows.
  • Hardness of soft metal part Hv100
  • Hv150 Hardness difference between the hardness (H) of the hard metal part and the hardness (S) of the soft metal part: Hv150
  • Example 7 (Comparative Example 7)
  • the conductive particle 1 is the conductive particle 4, and the average thickness of the hard metal portion in the terminal of the first electronic component is 3.0 ⁇ m and the average thickness of the soft metal portion is 9.0 ⁇ m. Except for the above, an anisotropic conductive joint was produced and evaluated in the same manner as in Example 1. The results are shown in Table 1-4.
  • Comparative Examples 8-12 In Comparative Example 7, the average thickness of the hard metal part and the average thickness of the soft metal part in the terminal of the first electronic component were the same as in Comparative Example 7, except that the average thickness described in Table 1-4 was used. An anisotropic conductive assembly was prepared and evaluated. The results are shown in Table 1-4.
  • the number average particle diameter (D) of the conductive particles, the hardness of the conductive particles, the hardness of the hard metal part, the hardness of the soft metal part, and the hardness (H) of the hard metal part and the soft metal part is as follows.
  • Hardness of soft metal part Hv100
  • Hv150 Hardness difference between the hardness (H) of the hard metal part and the hardness (S) of the soft metal part: Hv150
  • Example 24 an anisotropic conductive joined body was fabricated in the same manner as in Example 4 except that the hardness of the hard metal portion in the terminal of the first electronic component was Hv100 and the hardness of the soft metal portion was Hv10. ,evaluated. The results are shown in Table 1-5.
  • Example 24 an anisotropic conductive joint was produced in the same manner as in Example 24 except that the hardness of the soft metal part in the terminal of the first electronic component was changed to the hardness shown in Table 1-5. The evaluation was carried out. The results are shown in Table 1-5.
  • the number average particle diameter (D) of the conductive particles, the hardness of the conductive particles, the average thickness of the hard metal part, the average thickness of the soft metal part, and the average thickness of the soft metal part is as follows.
  • Number average particle diameter of conductive particles 3.0 ⁇ m
  • Hardness of conductive particles 7,840 N / mm 2 (800 kgf / mm 2 )
  • Average thickness of hard metal part 11.0 ⁇ m
  • Average thickness of soft metal part 1.0 ⁇ m Ratio (A / D) of the average thickness [A ( ⁇ m)] of the soft metal part to the number average particle diameter [D ( ⁇ m)] of the conductive particles: 0.33
  • Example 30 In Example 4, an anisotropic conductive joint was produced in the same manner as in Example 4 except that the hardness of the hard metal part in the terminal of the first electronic component was Hv150 and the hardness of the soft metal part was Hv100. The evaluation was carried out. The results are shown in Table 1-6.
  • Example 30 An anisotropic conductive joint was produced in the same manner as in Example 30, except that the hardness of the hard metal part in the terminal of the first electronic component was changed to the hardness shown in Table 1-6. The evaluation was carried out. The results are shown in Table 1-6.
  • the number average particle diameter (D) of the conductive particles, the hardness of the conductive particles, the average thickness of the hard metal part, the average thickness of the soft metal part, and the soft metal part is as follows.
  • Example 36 the anisotropic conductive joint was obtained in the same manner as in Example 4 except that the hardness of the hard metal part in the terminal of the first electronic component was Hv200 and the softness of the soft metal part was Hv100. Fabricated and evaluated. The results are shown in Table 1-7.
  • Example 36 an anisotropic conductive joint was produced in the same manner as in Example 36 except that the hardness of the soft metal part in the terminal of the first electronic component was changed to the hardness shown in Table 1-7. The evaluation was carried out. The results are shown in Table 1-7.
  • Example 36 the number average particle diameter (D) of the conductive particles, the hardness of the conductive particles, the average thickness of the hard metal part, the average thickness of the soft metal part, and the average thickness of the soft metal part
  • the ratio (A / D) between [A ( ⁇ m)] and the number average particle diameter [D ( ⁇ m)] of the conductive particles is as follows.
  • Example 37 An anisotropic conductive joined body was prepared and evaluated in the same manner as in Example 4 except that the conductive particle 1 was changed to the conductive particle 5. The results are shown in Table 1-8.
  • Example 38 In Example 4, an anisotropic conductive joined body was prepared and evaluated in the same manner as in Example 4 except that the conductive particle 1 was changed to the conductive particle 6. The results are shown in Table 1-8.
  • Example 39 In Example 4, an anisotropic conductive joined body was prepared and evaluated in the same manner as in Example 4 except that the conductive particle 1 was changed to the conductive particle 7. The results are shown in Table 1-8.
  • Example 40 In Example 4, an anisotropic conductive joined body was prepared and evaluated in the same manner as in Example 4 except that the conductive particle 1 was changed to the conductive particle 8. The results are shown in Table 1-8.
  • Example 41 In Example 4, an anisotropic conductive joined body was prepared and evaluated in the same manner as in Example 4 except that the conductive particle 1 was changed to the conductive particle 9. The results are shown in Table 1-8.
  • Example 21 An anisotropic conductive joined body was produced and evaluated in the same manner as in Example 4 except that the conductive particle 1 was changed to the conductive particle 10. The results are shown in Table 1-8.
  • the number average particle diameter (D) of the conductive particles, the hardness of the hard metal part, the hardness of the soft metal part, the hardness (H) of the hard metal part and the hardness of the soft metal part are: It is as follows.
  • Hardness of hard metal part Hv250 Hardness of soft metal part: Hv100 Hardness difference (HS) between the hardness (H) of the hard metal part and the hardness (S) of the soft metal part: Hv150 Ratio (A / D) of the average thickness [A ( ⁇ m)] of the soft metal part to the number average particle diameter [D ( ⁇ m)] of the conductive particles: 0.33
  • the anisotropic conductive joints of Examples 1-41 are suitable for the collapse of the conductive particles contained in the anisotropic conductive material, the conduction resistance value ( ⁇ ) was low, and it was confirmed that the connection reliability was excellent.
  • the conductive particles were crushed at 85 ° C. and 85% RH for 500 hours. It can be seen that it is still better, and the conduction resistance value ( ⁇ ) is 0.8 to 1.3, which is a lower value.
  • the anisotropic conductive joints of Comparative Examples 1 to 6 are composed of only the soft metal part or the hard metal part as the first electronic component and terminal. Therefore, it can be seen that the conductive particles are weakly crushed after a lapse of 500 hours at 85 ° C. and 85% RH, and the conduction resistance value is high. Further, from Table 1-4, when the hardness of the conductive particles is less than 5,880 N / mm 2 (600 kgf / mm 2 ), even if the particle crushing is good, the conduction resistance value is high. I understand.
  • the anisotropic conductive joints of Comparative Examples 13 to 20 have no difference in hardness of the hard metal portion and the hardness of the soft metal portion. Since the hardness is larger than Hv100 or the hardness of the hard metal part is larger than Hv650, it is understood that the particle collapse after 500 hours at 85 ° C. and 85% RH is weak and the conduction resistance value is high.
  • connection method using the anisotropic conductive material of the present invention and the anisotropic conductive joint the conductive particles are crushed well, the connection resistance value is low, and the particle repulsion of the conductive particles is small, Since connection reliability improves, it can be suitably used as a method for connecting an anisotropic conductive material and an anisotropic conductive joined body.

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Abstract

　第１の電子部品の端子と第２の電子部品の端子とを、異方性導電材料を介して接続した異方性導電接合体であって、前記第１の電子部品の端子が、硬金属部及び前記硬金属部よりも柔らかい軟金属部を有し、前記異方性導電材料が導電性粒子を有し、前記軟金属部が、前記導電性粒子と接しており、前記硬金属部が、前記第１の電子部品の配線と接しており、前記硬金属部の硬度が、Ｈｖ１００～６５０であり、前記軟金属部の硬度が、Ｈｖ１０～１００であり、前記導電性粒子の硬度が、５，８８０Ｎ／ｍｍ２～２６，４６０Ｎ／ｍｍ２である異方性導電接合体である。

Description

異方性導電材料を用いた接続方法及び異方性導電接合体
　本発明は、異方性導電材料を用いた接続方法及び異方性導電接合体に関する。
　従来より、電子部品を基板と接続する手段として、導電性粒子が分散された熱硬化性樹脂を剥離フィルムに塗布したテープ状の接続材料（例えば、異方性導電フィルム（ＡＣＦ；Ａｎｉｓｏｔｒｏｐｉｃ　Ｃｏｎｄｕｃｔｉｖｅ　Ｆｉｌｍ）などの異方性導電材料）が用いられている。
　この異方性導電材料は、例えば、フレキシブルプリント基板（ＦＰＣ）やＩＣチップの端子と、ＬＣＤパネルのガラス基板上に形成されたＩＴＯ（Ｉｎｄｉｕｍ　Ｔｉｎ　Ｏｘｉｄｅ）電極とを接続する場合を始めとして、種々の端子同士を接着すると共に電気的に接続する場合に用いられている。
　近年、電子部品は、より小型化、集積化が進んでいる。そのため、前記電子部品の有する電極は、隣り合う電極間のピッチがより小さく（ファインピッチ）なりつつある。ファインピッチの配線には、高電圧及び高電流に対応する為に高硬度を有する配線（例えば、Ａｌ、Ｃｕ、非結晶ＩＴＯ、ＩＺＯなど）が使用されている。ところが、高硬度の配線を使用する場合は、前記異方性導電材料に高硬度の導電性粒子を使用する必要がある。そうすると、従来のように、種々の端子がＡｕのみからなる場合は、Ａｕが軟金属であることから、前記導電性粒子が前記端子に埋没してしまい、前記導電性粒子の潰れが十分に行われず、異方性導電接続の初期から接続抵抗値が高くなり、接続信頼性が低下するという問題がある。一方、前記端子の硬度を高くすると、前記導電性粒子の潰れが過剰になる為に、異方性導電接続の経時における粒子反発が大きくなり、接続信頼性が低下するという問題がある。
　種々の端子の埋没を防ぐ技術として、第１の基板に形成された第１の金製突起状電極と、第２の基板に形成された第２の金製突起状電極とを固着した電子デバイスであって、前記第１の金製突起状電極における硬度を、前記第２の金製突起状電極における硬度に比べて高く形成することが開示されている（特許文献１参照）。また、前記第１の金製突起状電極として、金より硬度が高い金属の接合面側又は全表面上に金を被覆した電極が開示されている。
　しかし、この場合は、前記第１の金製突起状電極と前記第２の金製突起状電極とを直接固着することから、前記異方性導電材料を使用することが想定されておらず、導電性粒子が端子に埋没してしまい、導電性粒子の潰れが十分に行われず、異方性導電接続の初期から接続抵抗値が高くなり、接続信頼性が低下する問題及び、粒子反発が大きくなり、異方性導電接続の経時における接続信頼性が低下してしまうという問題が依然として残る。
　したがって、ファインピッチの異方性導電接続において、導電性粒子の潰れが良好に行われ、異方性導電接続の初期から接続抵抗値が低く、かつ異方性導電接続の経時における導電性粒子の粒子反発が小さくなり、接続信頼性が向上する、異方性導電材料を用いた接続方法及び異方性導電接合体の提供が求められているのが現状である。
特開２００４－１９３１６１号公報
　本発明は、従来における前記諸問題を解決し、以下の目的を達成することを課題とする。即ち、本発明は、ファインピッチの異方性導電接続において、導電性粒子の潰れが良好に行われ、異方性導電接続の初期から接続抵抗値が低く、かつ異方性導電接続の経時における導電性粒子の粒子反発が小さくなり、接続信頼性が向上する、異方性導電材料を用いた接続方法及び異方性導電接合体を提供することを目的とする。
　前記課題を解決するための手段としては、以下の通りである。即ち、
　＜１＞　第１の電子部品の端子と第２の電子部品の端子とを、異方性導電材料を介して接続した異方性導電接合体であって、
　前記第１の電子部品の端子が、硬金属部及び前記硬金属部よりも柔らかい軟金属部を有し、
　前記異方性導電材料が導電性粒子を有し、
　前記軟金属部が、前記導電性粒子と接しており、
　前記硬金属部が、前記第１の電子部品の配線と接しており、
　前記硬金属部の硬度が、Ｈｖ１００～Ｈｖ６５０であり、
　前記軟金属部の硬度が、Ｈｖ１０～Ｈｖ１００であり、
　前記導電性粒子の硬度が、５，８８０Ｎ／ｍｍ２～２６，４６０Ｎ／ｍｍ２であることを特徴とする異方性導電接合体である。
　＜２＞　硬金属部が、平板状であり、接続前の前記硬金属部の平均厚みが、３．０μｍ～１２．０μｍであり、
　軟金属部が、平板状であり、接続前の前記軟金属部の平均厚みが、０．１μｍ～９．０μｍである前記＜１＞に記載の異方性導電接合体である。
　＜３＞　接続前の導電性粒子の個数平均粒子径が、３．０μｍ～１０．０μｍである前記＜１＞から＜２＞のいずれかに記載の異方性導電接合体である。
　＜４＞　接続前の平板状の軟金属部の平均厚み〔Ａ（μｍ）〕と、接続前の導電性粒子の個数平均粒子径〔Ｄ（μｍ）〕との比（Ａ／Ｄ）が、０．０２～１．００である前記＜２＞から＜３＞のいずれかに記載の異方性導電接合体である。
　＜５＞　硬金属部の硬度（Ｈ）と軟金属部の硬度（Ｓ）との差（Ｈ－Ｓ）が、Ｈｖ４０以上である前記＜１＞から＜４＞のいずれかに記載の異方性導電接合体である。
　＜６＞　接続前の平板状の軟金属部の平均厚み〔Ａ（μｍ）〕と、接続前の導電性粒子の個数平均粒子径〔Ｄ（μｍ）〕との比（Ａ／Ｄ）が、０．０７～０．７０であり、
　硬金属部の硬度（Ｈ）と軟金属部の硬度（Ｓ）との差（Ｈ－Ｓ）が、Ｈｖ５０～Ｈｖ３５０である前記＜２＞から＜５＞のいずれかに記載の異方性導電接合体である。
　＜７＞　第１の電子部品の端子と第２の電子部品の端子とを、異方性導電接続させる接続方法であって、
　前記第１の電子部品の端子が、硬金属部及び前記硬金属部よりも柔らかい軟金属部を有し、
　前記硬金属部が、前記第１の電子部品の配線と接しており、
　前記第１の電子部品の端子及び前記第２の電子部品の端子のいずれか一方の上に、導電性粒子を含有する異方性導電材料を配置する配置工程と、
　前記異方性導電材料上に他方の前記電子部品を載置する載置工程と、
　前記軟金属部と前記導電性粒子とが接するように、前記第１の電子部品及び前記第２の電子部品のいずれか一方を、加熱及び押圧する加熱押圧工程とを含み、
　前記硬金属部の硬度が、Ｈｖ１００～Ｈｖ６５０であり、
　前記軟金属部の硬度が、Ｈｖ１０～Ｈｖ１００であり、
　前記導電性粒子の硬度が、５，８８０Ｎ／ｍｍ２～２６，４６０Ｎ／ｍｍ２であることを特徴とする接続方法である。
　＜８＞　硬金属部が、平板状であり、接続前の前記硬金属部の平均厚みが、３．０μｍ～１２．０μｍであり、
　軟金属部が、平板状であり、接続前の前記軟金属部の平均厚みが、０．１μｍ～９．０μｍである前記＜７＞に記載の接続方法である。
　＜９＞　接続前の導電性粒子の個数平均粒子径が、３．０μｍ～１０．０μｍである前記＜７＞から＜８＞のいずれかに記載の接続方法である。
　＜１０＞　接続前の平板状の軟金属部の平均厚み〔Ａ（μｍ）〕と、接続前の導電性粒子の個数平均粒子径〔Ｄ（μｍ）〕との比（Ａ／Ｄ）が、０．０２～１．００である前記＜８＞から＜９＞のいずれかに記載の接続方法である。
　＜１１＞　硬金属部の硬度（Ｈ）と軟金属部の硬度（Ｓ）との差（Ｈ－Ｓ）が、Ｈｖ４０以上である前記＜７＞から＜１０＞のいずれかに記載の接続方法である。
　＜１２＞　接続前の平板状の軟金属部の平均厚み〔Ａ（μｍ）〕と、接続前の導電性粒子の個数平均粒子径〔Ｄ（μｍ）〕との比（Ａ／Ｄ）が、０．０７～０．７０であり、
　硬金属部の硬度（Ｈ）と軟金属部の硬度（Ｓ）との差（Ｈ－Ｓ）が、Ｈｖ５０～Ｈｖ３５０である前記＜８＞から＜１１＞のいずれかに記載の接続方法である。
　＜１３＞　前記＜７＞から＜１２＞のいずれかに記載の接続方法により製造されたことを特徴とする異方性導電接合体である。
　本発明によれば、従来における前記諸問題を解決し、前記目的を達成することができ、ファインピッチの異方性導電接続において、導電性粒子の潰れが良好に行われ、異方性導電接続の初期から接続抵抗値が低く、かつ異方性導電接続の経時における導電性粒子の粒子反発が小さくなり、接続信頼性が向上する、異方性導電材料の接続方法及び異方性導電接合体を提供することができる。
図１は、本発明に用いる第１の電子部品の一例を説明するための概略断面図である。 図２Ａは、本発明の接続方法の一例を説明するための概略断面図である。 図２Ｂは、本発明の接続方法の一例を説明するための概略断面図である。 図２Ｃは、本発明の接続方法の一例を説明するための概略断面図である。
（異方性導電接合体）
　本発明の異方性導電接合体は、第１の電子部品と、第２の電子部品と、異方性導電材料とを少なくとも有し、更に必要に応じて、その他の部材を有する。
　前記異方性導電接合体は、前記第１の電子部品の端子と前記第２の電子部品の端子とを、前記異方性導電材料を介して接続した接合体である。
＜第１の電子部品＞
　前記第１の電子部品としては、端子を有し、前記異方性導電材料を用いた異方性導電接続の対象となる電子部品であれば、特に制限はなく、目的に応じて適宜選択することができ、例えば、ＩＣチップ、ＴＡＢテープ、液晶パネルなどが挙げられる。前記ＩＣチップとしては、例えば、フラットパネルディスプレイ（ＦＰＤ）における液晶画面制御用ＩＣチップなどが挙げられる。
－第１の電子部品の端子－
　前記第１の電子部品の端子としては、前記異方性導電材料を用いた異方性導電接続の対象となる電子部品の端子であり、硬金属部及び前記硬金属部よりも柔らかい軟金属部を有していれば、特に制限はなく、目的に応じて適宜選択することができる。
－－硬金属部－－
　前記硬金属部としては、前記第１の電子部品の配線と接しており、硬度がＨｖ１００～Ｈｖ６５０であれば、特に制限はなく、目的に応じて適宜選択することができる。
　前記硬金属部の材質としては、例えば、Ｎｉ、Ｐｄ、Ｃｕ、Ｔｉ、Ｆｅ、Ｃｒ、Ａｌ、Ｉｎなどが挙げられる。これらは、１種単独で使用してもよいし、２種以上を併用してもよい。
　前記硬金属部の硬度としては、Ｈｖ１００～Ｈｖ４５０が好ましい。
－－硬度（Ｈｖ）－－
　前記硬度は、ビッカース硬さである。前記ビッカース硬さの測定方法としては、ＪＩＳ　Ｚ２２４４に記載の方法などが挙げられる。
－－－硬金属部の形状等－－－
　前記硬金属部の形状としては、特に制限はなく、目的に応じて適宜選択することができ、例えば、平板状、凹板状、凸板状、凹凸板状、波板状などが挙げられる。これらの中でも、平板状が好ましい。
　前記硬金属部の構造としては、特に制限はなく、目的に応じて適宜選択することができ、例えば、１種単独の部材で形成された構造、２種以上の部材で形成された構造などが挙げられる。
　前記硬金属部の平均厚みとしては、特に制限はなく、目的に応じて適宜選択することができるが、前記異方性導電接合体の耐久性及び異方性導電接続時の導電性の点で、３．０μｍ～１２．０μｍが好ましく、５．０μｍ～１１．０μｍがより好ましく、１０．０μｍ～１１．０μｍが特に好ましい。なお、前記硬金属部の平均厚みは、前記第１の電子部品の端子と前記第２の電子部品の端子とが接続する前に測定される平均厚みである。
　前記硬金属部の平均厚みは、例えば、前記硬金属部から任意の１０点を選び、それぞれの点における厚みを測定し、測定結果の厚みの平均値を算出することにより求めることができる。
－－軟金属部－－
　前記軟金属部としては、導電性粒子と接しており、硬度がＨｖ１０～Ｈｖ１００であれば、特に制限はなく、目的に応じて適宜選択することができる。
　前記軟金属部の材質としては、例えば、Ａｕ、Ａｇ、ハンダなどが挙げられる。これらは、１種単独で使用してもよいし、２種以上を併用してもよい。
　前記硬金属部の硬度（Ｈ）と前記軟金属部の硬度（Ｓ）との差（Ｈ－Ｓ）としては、Ｈｖ４０以上が好ましく、Ｈｖ５０～Ｈｖ３５０がより好ましい。
－－－軟金属部の形状等－－－
　前記軟金属部の形状としては、特に制限はなく、目的に応じて適宜選択することができ、例えば、平板状、凹板状、凸板状、凹凸板状、波板状などが挙げられる。これらの中でも、平板状が好ましい。
　前記軟金属部の構造としては、特に制限はなく、目的に応じて適宜選択することができ、例えば、１種単独の部材で形成された構造、２種以上の部材で形成された構造などが挙げられる。
　前記軟金属部の平均厚みとしては、特に制限はなく、目的に応じて適宜選択することができるが、前記異方性導電接合体の耐久性及び異方性導電接続時の導電性の点で、０．１μｍ～９．０μｍが好ましく、０．２μｍ～７．０μｍがより好ましく、１．０μｍ～２．０μｍが特に好ましい。なお、前記軟金属部の平均厚みは、前記第１の電子部品の端子と前記第２の電子部品の端子とが接続する前に測定される平均厚みである。
　前記軟金属部の平均厚みの測定方法としては、例えば、前記軟金属部から任意の１０点を選び、それぞれの点における厚みを測定し、測定結果の厚みの平均値を算出することにより求めることができる。
＜第２の電子部品＞
　前記第２の電子部品としては、端子を有し、前記異方性導電材料を用いた異方性導電接続の対象となる電子部品であれば、特に制限はなく、目的に応じて適宜選択することができ、例えば、前記第１の電子部品と同様な電子部品、ＩＴＯガラス基板、非結晶ＩＴＯガラス基板、ＩＺＯガラス基板、その他ガラスパターン基板などが挙げられる。この中でも、非結晶ＩＴＯガラス基板、ＩＺＯガラス基板が好ましい。
－第２の電子部品の端子－
　前記第２の電子部品の端子としては、前記異方性導電材料を用いた異方性導電接続の対象となる電子部品の端子であれば、特に制限はなく、目的に応じて適宜選択することができ、例えば、前記第１の電子部品の端子と同様の端子などが挙げられる。
＜異方性導電材料＞
　前記異方性導電材料は、導電性粒子を少なくとも含有し、更に必要に応じて、その他の成分を含有する。
　前記異方性導電材料の形態としては、特に制限はなく、目的に応じて適宜選択することができ、例えば、フィルム状、液体状などが挙げられる。
－導電性粒子－
　前記導電性粒子としては、硬度が５，８８０Ｎ／ｍｍ２～２６，４６０Ｎ／ｍｍ２（６００ｋｇｆ／ｍｍ２～２，７００ｋｇｆ／ｍｍ２）であれば、特に制限はなく、目的に応じて適宜選択することができる。
　前記導電性粒子としては、特に制限はなく、目的に応じて適宜選択することができ、例えば、金属粒子（Ｎｉ、Ｆｅ、Ｃｕ、Ａｌ、Ｓｎ、Ｐｂ、Ｃｒ、Ｃｏなど）、樹脂コア金属メッキ粒子などが挙げられる。前記樹脂コア金属メッキ粒子における樹脂コアの材質としては、例えば、ジビニルベンゼン重合体、ポリスチレン樹脂、エポキシ樹脂、フェノール樹脂、アクリル樹脂、アクリロニトリル・スチレン（ＡＳ）樹脂、ベンゾグアナミン樹脂などが挙げられる。これらは、１種単独で使用してもよいし、２種以上を併用してもよい。
　前記導電性粒子の硬度は、２０％Ｋ値（圧縮弾性変形特性Ｋ２０）として求められる硬度であり、例えば、以下の方法により測定することができる。
　前記硬度は、前記導電性粒子の粒子直径が２０％変位したときの圧縮弾性変形特性Ｋ２０であり、微小圧縮試験機（ＭＣＴ－Ｗ２０１、株式会社島津製作所製）を用い、直径５０μｍのダイヤモンド製円柱の平滑端面で、圧縮速度０．２２５ｇ／秒間にて、得られた粒子を圧縮した際の荷重値、圧縮変位等を測定し、下記式から求められる値である。即ち、２０％Ｋ値は、粒子の２０％変位に必要な荷重及び圧縮変形量を測定して求める。
　Ｋ２０＝（３／√２）×（Ｓ２０ －３／２）×（Ｒ－１／２）×Ｆ２０
　Ｆ２０：粒子の２０％変位に必要な荷重（Ｎ）
　Ｓ２０：粒子の２０％変位における圧縮変形量（ｍｍ）
　Ｒ：粒子の半径（ｍｍ）
　なお、前記Ｋ２０値は、粒子の硬さを普遍的かつ定量的に表すものである。
－－導電性粒子の形状等－－
　前記導電性粒子の形状としては、特に制限はなく、目的に応じて適宜選択することができる。
　前記導電性粒子の個数平均粒子径としては、特に制限はなく、目的に応じて適宜選択することができるが、前記異方性導電接合体の耐久性及び異方性導電接続時の導電性の点で、３．０μｍ～１２．０μｍが好ましい。
　なお、前記導電性粒子の個数平均粒子径は、異方性導電接続前に測定される個数平均粒子径である。
　前記導電性粒子の個数平均粒子径は、例えば、レーザー回折を用いて測定した粒度分布より測定することができる。
　前記軟金属部の平均厚み〔Ａ（μｍ）〕と前記導電性粒子の個数平均粒子径〔Ｄ（μｍ）〕との比（Ａ／Ｄ）としては、特に制限はなく、目的に応じて適宜選択することができるが、０．０２～１．００が好ましく、０．０７～０．７０がより好ましい。前記比が、前記より好ましい範囲内であると、接続信頼性により優れる点で有利である。
－その他の成分－
　前記その他の成分としては、特に制限はなく、目的に応じて適宜選択することができ、例えば、膜形成樹脂、熱硬化性樹脂、硬化剤、シランカップリング剤などが挙げられる。
－－膜形成樹脂－－
　前記膜形成樹脂としては、特に制限はなく、目的に応じて適宜選択することができ、例えば、フェノキシ樹脂、不飽和ポリエステル樹脂、飽和ポリエステル樹脂、ウレタン樹脂、ブタジエン樹脂、ポリイミド樹脂、ポリアミド樹脂、ポリオレフィン樹脂などが挙げられる。前記膜形成樹脂は、１種単独で使用してもよいし、２種以上を併用してもよい。これらの中でも、製膜性、加工性、接続信頼性の点からフェノキシ樹脂が特に好ましい。
　前記フェノキシ樹脂とは、ビスフェノールＡとエピクロルヒドリンより合成される樹脂であって、適宜合成したものを使用してもよいし、市販品を使用してもよい。
　前記異方性導電材料における前記膜形成樹脂の含有量としては、特に制限はなく、目的に応じて適宜選択することができる。
－－熱硬化性樹脂－－
　前記熱硬化性樹脂としては、特に制限はなく、目的に応じて適宜選択することができ、例えば、エポキシ樹脂、アクリル樹脂などが挙げられる。
－－－エポキシ樹脂－－－
　前記エポキシ樹脂としては、特に制限はなく、目的に応じて適宜選択することができ、例えば、ビスフェノールＡ型エポキシ樹脂、ビスフェノールＦ型エポキシ樹脂、ノボラック型エポキシ樹脂、ナフタレン型エポキシ樹脂、それらの変性エポキシ樹脂等の熱硬化性エポキシ樹脂などが挙げられる。これらは、１種単独で使用してもよいし、２種以上を併用してもよい。
　前記異方性導電材料における前記エポキシ樹脂の含有量としては、特に制限はなく、目的に応じて適宜選択することができる。
－－－アクリル樹脂－－－
　前記アクリル樹脂としては、特に制限はなく、目的に応じて適宜選択することができ、例えば、メチル（メタ）アクリレート、エチル（メタ）アクリレート、イソプロピル（メタ）アクリレート、イソブチル（メタ）アクリレート、リン酸基含有（メタ）アクリレート、エチレングリコールジ（メタ）アクリレート、ジエチレングリコールジ（メタ）アクリレート、トリメチロールプロパントリ（メタ）アクリレート、ジメチロールトリシクロデカンジ（メタ）アクリレート、テトラメチレングリコールテトラ（メタ）アクリレート、２－ヒドロキシ－１，３－ジ（メタ）アクリロキシプロパン、２，２－ビス［４－（（メタ）アクリロキシメトキシ）フェニル］プロパン、２，２－ビス［４－（（メタ）アクリロキシエトキシ）フェニル］プロパン、ジシクロペンテニル（メタ）アクリレート、トリシクロデカニル（メタ）アクリレート、トリス（（メタ）アクリロキシエチル）イソシアヌレート、ウレタン（メタ）アクリレート、エポキシ（メタ）アクリレートなどが挙げられる。これらは、１種単独で使用してもよいし、２種以上を併用してもよい。
　前記異方性導電材料における前記アクリル樹脂の含有量としては、特に制限はなく、目的に応じて適宜選択することができる。
－－硬化剤－－
　前記硬化剤としては、特に制限はなく、目的に応じて適宜選択することができ、例えば、カチオン系硬化剤、ラジカル系硬化剤などが挙げられる。
－－－カチオン系硬化剤－－－
　前記カチオン系硬化剤としては、特に制限はなく、目的に応じて適宜選択することができ、例えば、スルホニウム塩、オニウム塩、トリエチルアミン等のアルキルアミン、ピリジン、イミダゾールなどが挙げられる。
　前記カチオン系硬化剤は、前記熱硬化性樹脂としてのエポキシ樹脂と併用することが好ましい。
　前記異方性導電材料における前記カチオン系硬化剤の含有量としては、特に制限はなく、目的に応じて適宜選択することができる。
－－－ラジカル系硬化剤－－－
　前記ラジカル系硬化剤としては、特に制限はなく、目的に応じて適宜選択することができ、例えば、有機過酸化物などが挙げられる。
　前記有機過酸化物としては、特に制限はなく、目的に応じて適宜選択することができ、例えば、ラウロイルパーオキサイド、ブチルパーオキサイド、ベンジルパーオキサイドなどが挙げられる。
　前記ラジカル系硬化剤は、前記熱硬化性樹脂としてのアクリル樹脂と併用することが好ましい。
　前記異方性導電材料における前記ラジカル系硬化剤の含有量としては、特に制限はなく、目的に応じて適宜選択することができる。
－－シランカップリング剤－－
　前記シランカップリング剤としては、特に制限はなく、目的に応じて適宜選択することができ、例えば、エポキシ系シランカップリング剤、アクリル系シランカップリング剤、チオール系シランカップリング剤、アミン系シランカップリング剤などが挙げられる。
　前記異方性導電材料における前記シランカップリング剤の含有量としては、特に制限はなく、目的に応じて適宜選択することができる。
　本発明の異方性導電接合体は、前記第１の電子部品の端子が、前記硬金属部及び前記軟金属部を有し、かつ前記硬金属部の硬度、前記軟金属部の硬度、及び前記導電性粒子の硬度が特定の範囲であるため、前記軟金属部に前記導電性粒子を適度に埋没させることなどにより、前記異方性導電材料に含有された前記導電性粒子を適度に潰すことができ、潰れ不足及び過剰な潰れを抑制できる。そうすることにより、従来の問題、即ち、前記軟金属部と、前記異方性導電材料とが接するように載置した前記第１の電子部品の端子を、前記異方性導電材料に押し込む際に、前記導電性粒子が、前記第１の電子部品の端子に埋没することにより、前記導電性粒子の潰れが十分に得られず、高抵抗になってしまう問題、及び前記導電性粒子が潰れすぎることにより、前記導電性粒子の反発が大きくなり、接続信頼性が悪化してしまう問題を解消できる。その結果、ファインピッチの異方性導電接続において、導電性粒子の潰れが良好に行われ、異方性導電接続の初期から接続抵抗値が低く、かつ異方性導電接続の経時における導電性粒子の粒子反発が小さくなり、接続信頼性を向上させることができる。
（異方性導電材料を用いた接続方法）
　本発明の異方性導電材料を用いた接続方法は、配置工程と、載置工程と、加熱押圧工程とを少なくとも含み、更に必要に応じて、その他の工程を含む。
　前記接続方法は、第１の電子部品の端子と第２の電子部品の端子とを、異方性導電接続させる接続方法であって、異方性導電材料を介して、前記第１の電子部品の端子と前記第２の電子部品の端子とを接続させる方法である。
　前記接続方法は、本発明の異方性導電接合体の製造に好適に用いることができる。
＜配置工程＞
　前記配置工程としては、前記第１の電子部品の端子及び前記第２の電子部品の端子のいずれか一方の上に、導電性粒子を含有する前記異方性導電材料を配置する工程であれば、特に制限はなく、目的に応じて適宜選択することができ、例えば、貼付、塗布などが挙げられる。
－第１の電子部品－
　前記第１の電子部品としては、特に制限はなく、目的に応じて適宜選択することができ、例えば、本発明の異方性導電接合体の説明において記載した前記第１の電子部品と同様のものなどが挙げられる。
　即ち、前記第１の電子部品は、端子を有する。前記端子は、硬金属部及び前記硬金属部よりも柔らかい軟金属部を有する。前記硬金属部は、前記第１の電子部品の配線と接している。前記硬金属部の硬度は、Ｈｖ１００～Ｈｖ６５０である。前記軟金属部の硬度は、Ｈｖ１０～Ｈｖ１００である。
－第２の電子部品－
　前記第２の電子部品としては、特に制限はなく、目的に応じて適宜選択することができ、例えば、本発明の異方性導電接合体の説明において記載した前記第２の電子部品と同様のものなどが挙げられる。
－異方性導電材料－
　前記異方性導電材料としては、導電性粒子を有する異方性導電材料であれば、特に制限はなく、目的に応じて適宜選択することができ、例えば、本発明の異方性導電接合体の説明において記載した前記異方性導電材料と同様のものなどが挙げられる。
　前記導電性粒子の硬度は、５，８８０Ｎ／ｍｍ２～２６，４６０Ｎ／ｍｍ２である。
　前記配置工程において、前記第１の電子部品の端子の上に、前記導電性粒子を含有する前記異方性導電材料を配置する場合には、前記軟金属部と、前記異方性導電材料とが接するように配置される。
＜載置工程＞
　前記載置工程としては、前記配置工程において配置した電子部品でない方の電子部品（他方の電子部品）を、前記異方性導電材料上に載置する工程であれば、特に制限はなく、目的に応じて適宜選択することができる。
　前記載置工程において、他方の電子部品として前記第１の電子部品を用いる場合には、前記第１の電子部品は、前記軟金属部と、前記異方性導電材料とが接するように載置される。
　この際、前記導電性粒子は加熱及び押圧されずに、前記導電性粒子は潰れていないため、異方性導電接続は行われていない。
＜加熱押圧工程＞
　前記加熱押圧工程としては、前記軟金属部と前記導電性粒子とが接するように、前記第１の電子部品及び前記第２の電子部品のいずれか一方を、加熱及び押圧する工程であれば、特に制限はなく、目的に応じて適宜選択することができ、例えば、加熱押圧部材により加熱及び押圧することができる。
　前記加熱押圧部材としては、例えば、加熱機構を有する押圧部材などが挙げられる。前記加熱機構を有する押圧部材としては、例えば、ヒートツールなどが挙げられる。
　前記加熱の温度としては、特に制限はなく、目的に応じて適宜選択することができるが、１４０℃～２００℃が好ましい。
　前記押圧の圧力としては、特に制限はなく、目的に応じて適宜選択することができるが、０．１ＭＰａ～８０ＭＰａが好ましい。
　前記加熱及び押圧の時間としては、特に制限はなく、目的に応じて適宜選択することができ、例えば、０．５秒間～１２０秒間が挙げられる。
　第１の電子部品の端子と第２の電子部品の端子とを、異方性導電材料を介して接続する本発明の接続方法について、その一例を、図を参照して説明する。
　図２Ａ～図２Ｃは、本発明の接続方法（異方性導電接合体の製造方法）により本発明の異方性導電接合体を製造する一例を説明するための概略断面図である。まず、第２の電子部品１の端子２の上に、導電性粒子３を含有する異方性導電材料４を配置する（図２Ａ）。続いて、異方性導電材料４の上に、硬金属部６及び軟金属部５を有する第１の電子部品７の端子の軟金属部５が異方性導電材料４と接するように、第１の電子部品７を載置する。この時点では、第２の電子部品１の端子２と第１の電子部品７の端子とは、導電性粒子３が加熱及び押圧されずに、導電性粒子３が潰れていないため、まだ異方性導電接続されていない（図２Ｂ）。そして、第１の電子部品７の上から加熱押圧部材（図示せず）により加熱及び押圧することで、第１の電子部品７の軟金属部５と、異方性導電材料４に含有される導電性粒子３とが接触し、第２の電子部品１と第１の電子部品７とが、異方性導電材料４を介して異方性導電接続され、異方性導電接合体８が製造される（図２Ｃ）。
　以下、本発明の実施例を説明するが、本発明は、これらの実施例に何ら限定されるものではない。
〔硬度（Ｈｖ）〕
　第１の電子部品の端子における、硬金属部及び軟金属部の硬度は、ビッカース硬度計（品番：ＶＭＴ－Ｘ、マツザワ社製）を用いて測定した。
　具体的には、無電解メッキ法を用いて、測定サンプルを作製し、測定対象の任意の１０点を選択し、ＪＩＳ　Ｚ２２４４に記載の測定方法に従って、前記ビッカース硬度計を用いて硬度を測定した。上記１０点におけるビッカース硬度の平均値を算出することにより前記硬度を求めた。
〔硬度（Ｎ／ｍｍ２（ｋｇｆ／ｍｍ２））〕
　異方性導電材料に含有される導電性粒子の硬度（２０％Ｋ値）は、以下の方法により測定した。
　前記硬度は、前記導電性粒子の粒子直径が２０％変位したときの圧縮弾性変形特性Ｋ２０であり、微小圧縮試験機（品番：ＭＣＴ－Ｗ２０１、株式会社島津製作所製）を用い、直径５０μｍのダイヤモンド製円柱の平滑端面で、圧縮速度０．２２５ｇ／秒間にて、得られた粒子を圧縮した際の荷重値、圧縮変位等を測定し、下記式から求めた。即ち、２０％Ｋ値は、粒子の２０％変位に必要な荷重及び圧縮変形量を測定して求めた。
　Ｋ２０＝（３／√２）×（Ｓ２０ －３／２）×（Ｒ－１／２）×Ｆ２０
　Ｆ２０：粒子の２０％変位に必要な荷重（Ｎ）
　Ｓ２０：粒子の２０％変位における圧縮変形量（ｍｍ）
　Ｒ：粒子の半径（ｍｍ）
〔平均厚み〕
　異方性導電接続前の第１の電子部品の端子における軟金属部の厚み及び硬金属部の厚みは、第１の電子部品の断面を金属顕微鏡（品番：ＭＸ５１、オリンパス株式会社製）を用いて観察して測定した。任意の１０点を選び、それぞれの点における厚みを測定し、測定結果の厚みの平均値を算出することで、平均厚みを求めた。
〔導電性粒子の個数平均粒子径（Ｄ）〕
　導電性粒子の個数平均粒子径は、レーザー回折を用いて測定した粒度分布より測定した。
〔硬金属部及び軟金属部の硬度（Ｈｖ）の調整方法〕
　特開２００９－７１０９３号公報の段落〔００３０〕に記載のように、熱処理を行い、バンプ硬度を適宜調整した。なお、軟金属部については、硬度をＨｖ１０～１００に調整した金（Ａｕ）を使用した。硬金属部については、硬度をＨｖ１００～６５０に調整したパラジウム（Ｐｄ）を使用した。
（導電性粒子１の製造例）
＜樹脂コア粒子１の作製＞
　ジビニルベンゼン、スチレン、及びブチルメタクリレートの混合比を調整した溶液に、重合開始剤としてベンゾイルパーオキサイドを投入して、均一攪拌しながら加熱を行い、重合反応を行うことにより微粒子分散液を得た。前記微粒子分散液をろ過し減圧乾燥することにより微粒子の凝集体であるブロック体を得た。更に、前記ブロック体を粉砕することにより、樹脂コア粒子１として個数平均粒子径３．０μｍのジビニルベンゼン系樹脂粒子を作製した。
＜樹脂コアニッケルメッキ粒子（導電性粒子）１の作製＞
　個数平均粒子経３．０μｍのジビニルベンゼン系樹脂粒子（５．０ｇ）に、パラジウム触媒を浸漬法により担持させた。次いで、この樹脂粒子に対し、硫酸ニッケル六水和物、次亜リン酸ナトリウム、クエン酸ナトリウム、トリエタノールアミン及び硝酸タリウムから調製された無電解ニッケルメッキ液（ｐＨ１２、メッキ液温５０℃）を用いて無電解ニッケルメッキを行い、種々のリン含有量を有するニッケルめっき層（金属層）が表面に形成された導電性粒子１を作製した。得られた導電性粒子１の個数平均粒子径は３．０μｍであり、硬度は、７，８４０Ｎ／ｍｍ２であった。
（導電性粒子２～３の製造例）
　樹脂コア粒子１の作製における均一攪拌の回転数を適宜変更した以外は、導電性粒子１の製造例と同様にして、個数平均粒子径が５．０μｍ、及び硬度が７，８４０Ｎ／ｍｍ２である導電性粒子２を作製した。
　樹脂コア粒子１の作製における均一攪拌の回転数を適宜変更した以外は、導電性粒子１の製造例と同様にして、個数平均粒子径が１０．０μｍ、及び硬度が７，８４０Ｎ／ｍｍ２である導電性粒子３を作製した。
（導電性粒子４～１０の製造例）
　ジビニルベンゼン、スチレン、及びブチルメタクリレートの混合比を適宜変更した以外は、導電性粒子１の製造例と同様にして、個数平均粒子径が３．０μｍ、及び硬度が３，９２０Ｎ／ｍｍ２である導電性粒子４を作製した。
　ジビニルベンゼン、スチレン、及びブチルメタクリレートの混合比を適宜変更した以外は、導電性粒子１の製造例と同様にして、個数平均粒子径が３．０μｍ、及び硬度が５，８８０Ｎ／ｍｍ２である導電性粒子５を作製した。
　ジビニルベンゼン、スチレン、及びブチルメタクリレートの混合比を適宜変更した以外は、導電性粒子１の製造例と同様にして、個数平均粒子径が３．０μｍ、及び硬度が１３，７２０Ｎ／ｍｍ２である導電性粒子６を作製した。
　ジビニルベンゼン、スチレン、及びブチルメタクリレートの混合比を適宜変更した以外は、導電性粒子１の製造例と同様にして、個数平均粒子径が３．０μｍ、及び硬度が１９，６００Ｎ／ｍｍ２である導電性粒子７を作製した。
　ジビニルベンゼン、スチレン、及びブチルメタクリレートの混合比を適宜変更した以外は、導電性粒子１の製造例と同様にして、個数平均粒子径が３．０μｍ、及び硬度が２４，５００Ｎ／ｍｍ２である導電性粒子８を作製した。
　ジビニルベンゼン、スチレン、及びブチルメタクリレートの混合比を適宜変更した以外は、導電性粒子１の製造例と同様にして、個数平均粒子径が３．０μｍ、及び硬度が２６，４６０Ｎ／ｍｍ２である導電性粒子９を作製した。
　ジビニルベンゼン、スチレン、及びブチルメタクリレートの混合比を適宜変更した以外は、導電性粒子１の製造例と同様にして、個数平均粒子径が３．０μｍ、及び硬度が２９，４００Ｎ／ｍｍ２である導電性粒子１０を作製した。
（実施例１）
＜異方性導電材料の作製＞
　前記膜形成樹脂としてのフェノキシ樹脂（品名：ＰＫＨＨ、フェノキシアソシエーツ社製）を３０質量部、前記熱硬化性樹脂としてのナフタレン型エポキシ樹脂（品名：ＨＰ４０３２Ｄ、ＤＩＣ株式会社製）を３０質量部、前記硬化剤としてのイミダゾール硬化剤（品名：ノバキュア３９４１ＨＰ、旭化成イーマテリアルズ株式会社製）を３０質量部、及びシランカップリング剤（品名：Ａ－１８７、モメンティブ・パフォーマンス・マテリアルズ社製）を１質量部で構成された接着剤中に、前記導電性粒子１を３５質量部で分散させて、不揮発分５０質量％の酢酸エチル－トルエン混合溶液を得た。
　次に、この混合溶液を厚み５０μｍのＰＥＴフィルム上に塗布した後、８０℃のオーブンで５分間乾燥することで、平均厚み２０μｍの異方性導電フィルム（異方性導電材料）を作製した。
＜第１の電子部品の端子の作製＞
　半導体素子としてＩＣチップ（外形１．８ｍｍ×２０．０ｍｍ、厚さ０．５ｍｍ、バンプ高さ１２．０μｍ、バンプ外形８５．０μｍ×３０．０μｍ）を用いた。前記半導体素子のバンプ上にスクリーン印刷によって、硬金属部として硬度がＨｖ２５０であるパラジウム（Ｐｄ）を平均厚みが９．０μｍとなるようにメッキした。続いて、前記硬金属部上に軟金属部として硬度がＨｖ１００である金（Ａｕ）を平均厚みが３．０μｍとなるようにメッキし、高さ２４．０μｍ、外形９７．０μｍ×４２．０μｍからなる端子を有する第１の電子部品を作製した。
　なお、作製した第１の電子部品の概略断面図を図１に示す。図１において、第１の電子部品７は、基板９上に平板状の硬金属部６及び平板状の軟金属部５がこの順で積層された構造をしている。
＜異方性導電接合体の製造＞
　厚み０．７ｍｍのガラス基板（品番：１７３７Ｆ、コーニング社製）にスパッタにより非結晶ＩＴＯを製膜させたＩＴＯコーティングガラス基板（第２の電子部品）上に実施例１で作製した異方性導電材料を配置し、実施例１で作製した第１の電子部品を前記異方性導電材料上に載置し、圧着条件２００℃、６０ＭＰａ、５秒間で異方性導電接続を行い、異方性導電接合体を製造した。
　具合的には、前記ＩＴＯコーティングガラス基板上に異方性導電材料を配置した後、更に、前記異方性導電材料上に前記第１の電子部品を仮固定し、ヒートツール２５ｍｍ幅で緩衝材（厚み５０μｍのテフロン（登録商標））を用いて、前記第１の電子部品上から圧着条件２００℃、６０ＭＰａ、５秒間（ツールスピード３０ｍｍ／ｓｅｃ、ステージ温度４０℃）で異方性導電接続を行い、異方性導電接合体を製造した。なお、前記ツールスピードとは、前記第１の電子部品上から前記ヒートツールによって押圧する際の押し込む速度である。
＜評価＞
　作製した異方性導電材料について、以下の評価を行った。結果を表１－１に示す。
〔導電性粒子の潰れ具合〕
　異方性導電材料に含まれる導電性粒子について、金属顕微鏡（品番：ＭＸ５１、オリンパス株式会社製）を用いて、異方性導電接続前の前記導電性粒子の直径を測定し、次に異方性導電接続後初期、及び８５℃、８５％ＲＨで５００時間経過後の前記導電性粒子の短手方向の長さを測定し、下記式（１）から初期、及び８５℃、８５％ＲＨで５００時間経過後の導電性粒子の潰れ具合を求めた。
　導電性粒子の潰れ具合（％）＝（異方性導電接続後の導電性粒子の短手方向の長さ／異方性導電接続前の導電性粒子の直径）×１００・・・・・・・・式（１）
　なお、異方性導電接続後の導電性粒子の短手方向の長さは、異方性導電接続時における第１の電子部品とＩＴＯコーティングガラス基板とに直交する方向の前記導電性粒子の長さとした。
　上記評価結果に基づき、前記導電性粒子の潰れ具合を以下の５段階で評価した。
　強：導電性粒子の潰れ具合（％）が５０％以上
　やや強：導電性粒子の潰れ具合（％）が４０％以上５０％未満
　良好：導電性粒子の潰れ具合（％）が３０％以上４０％未満
　やや弱：導電性粒子の潰れ具合（％）が２０％以上３０％未満
　弱：導電性粒子の潰れ具合（％）が１０％未満
〔導通抵抗値〕
　実施例１において製造した異方性導電接合体について、デジタルマルチメータ（品番：デジタルマルチメータ７５５５、横河電機株式会社製）を用いて１６ｃｈの端子間の抵抗値（導通抵抗値、Ω）を測定した。具体的には、４端子法にて電流１ｍＡを流したときの、初期、及び８５℃、８５％ＲＨで５００時間経過後の抵抗値（導通抵抗値、Ω）を測定した。
（実施例２～６）
　実施例１において、第１の電子部品の端子における硬金属部の平均厚み及び軟金属部の平均厚みを、表１－１に記載の平均厚みとした以外は、実施例１と同様にして、異方性導電接合体を作製し、評価を実施した。結果を表１－１に示す。
（比較例１）
　実施例１において、第１の電子部品の端子における硬金属部を作製せずに、軟金属部の平均厚みを１２．０μｍとした以外は、実施例１と同様にして、異方性導電接合体を作製し、評価を実施した。結果を表１－１に示す。
（比較例２）
　実施例１において、第１の電子部品の端子における硬金属部の平均厚みを１２．０μｍとし、軟金属部を作製しなかった以外は、実施例１と同様にして、異方性導電接合体を作製し、評価を実施した。結果を表１－１に示す。
Figure JPOXMLDOC01-appb-T000001
 　実施例１～６及び比較例１～２において、導電性粒子の個数平均粒子径（Ｄ）、導電性粒子の硬度、硬金属部の硬度、軟金属部の硬度、及び硬金属部の硬度（Ｈ）と軟金属部の硬度（Ｓ）との硬度差（Ｈ－Ｓ）は、以下の通りである。
　導電性粒子の個数平均粒子径（Ｄ）：３．０μｍ
　導電性粒子の硬度：７，８４０Ｎ／ｍｍ２（８００ｋｇｆ／ｍｍ２）
　硬金属部の硬度：Ｈｖ２５０
　軟金属部の硬度：Ｈｖ１００
　硬金属部の硬度（Ｈ）と軟金属部の硬度（Ｓ）との硬度差（Ｈ－Ｓ）：Ｈｖ１５０
（実施例７）
　実施例１において、前記導電性粒子１を前記導電性粒子２とし、かつ第１の電子部品の端子における硬金属部の平均厚みを７．５μｍ及び軟金属部の平均厚みを４．５μｍとした以外は、実施例１と同様にして、異方性導電接合体を作製し、評価を実施した。結果を表１－２に示す。
（実施例８～１３）
　実施例７において、第１の電子部品の端子における硬金属部の平均厚み及び軟金属部の平均厚みを、表１－２に記載の平均厚みとした以外は、実施例７と同様にして、異方性導電接合体を作製し、評価を実施した。結果を表１－２に示す。
（比較例３）
　実施例７において、第１の電子部品の端子における硬金属部を作製せずに、軟金属部の平均厚みを１２．０μｍとした以外は、実施例７と同様にして、異方性導電接合体を作製し、評価を実施した。結果を表１－２に示す。
（比較例４）
　実施例７において、第１の電子部品の端子における硬金属部の平均厚みを１２．０μｍとし、軟金属部を作製しなかった以外は、実施例７と同様にして、異方性導電接合体を作製し、評価を実施した。結果を表１－２に示す。
Figure JPOXMLDOC01-appb-T000002
 　実施例７～１３及び比較例３～４において、導電性粒子の個数平均粒子径（Ｄ）、導電性粒子の硬度、硬金属部の硬度、軟金属部の硬度、及び硬金属部の硬度（Ｈ）と軟金属部の硬度（Ｓ）との硬度差（Ｈ－Ｓ）は、以下の通りである。
　導電性粒子の個数平均粒子径（Ｄ）：５．０μｍ
　導電性粒子の硬度：７，８４０Ｎ／ｍｍ２（８００ｋｇｆ／ｍｍ２）
　硬金属部の硬度：Ｈｖ２５０
　軟金属部の硬度：Ｈｖ１００
　硬金属部の硬度（Ｈ）と軟金属部の硬度（Ｓ）との硬度差（Ｈ－Ｓ）：Ｈｖ１５０
（実施例１４）
　実施例１において、前記導電性粒子１を前記導電性粒子３とし、かつ第１の電子部品の端子における硬金属部の平均厚みを３．０μｍ及び軟金属部の平均厚みを９．０μｍとした以外は、実施例１と同様にして、異方性導電接合体を作製し、評価を実施した。結果を表１－３に示す。
（実施例１５～２３）
　実施例１４において、第１の電子部品の端子における硬金属部の平均厚み及び軟金属部の平均厚みを、表１－３に記載の平均厚みとした以外は、実施例１４と同様にして、異方性導電接合体を作製し、評価を実施した。結果を表１－３に示す。
（比較例５）
　実施例１４において、第１の電子部品の端子における硬金属部を作製せずに、軟金属部の平均厚みを１２．０μｍとした以外は、実施例１４と同様にして、異方性導電接合体を作製し、評価を実施した。結果を表１－３に示す。
（比較例６）
　実施例１４において、第１の電子部品の端子における硬金属部の平均厚みを１２．０μｍとし、軟金属部を作製しなかった以外は、実施例１４と同様にして、異方性導電接合体を作製し、評価を実施した。結果を表１－３に示す。
Figure JPOXMLDOC01-appb-T000003
 　実施例１４～２３及び比較例５～６において、導電性粒子の個数平均粒子径（Ｄ）、導電性粒子の硬度、硬金属部の硬度、軟金属部の硬度、及び硬金属部の硬度（Ｈ）と軟金属部の硬度（Ｓ）との硬度差（Ｈ－Ｓ）は、以下の通りである。
　導電性粒子の個数平均粒子径（Ｄ）：１０．０μｍ
　導電性粒子の硬度：７，８４０Ｎ／ｍｍ２（８００ｋｇｆ／ｍｍ２）
　硬金属部の硬度：Ｈｖ２５０
　軟金属部の硬度：Ｈｖ１００
　硬金属部の硬度（Ｈ）と軟金属部の硬度（Ｓ）との硬度差（Ｈ－Ｓ）：Ｈｖ１５０
（比較例７）
　実施例１において、前記導電性粒子１を前記導電性粒子４とし、更に、第１の電子部品の端子における硬金属部の平均厚みを３．０μｍ及び軟金属部の平均厚みを９．０μｍとした以外は、実施例１と同様にして、異方性導電接合体を作製し、評価を実施した。結果を表１－４に示す。
（比較例８～１２）
　比較例７において、第１の電子部品の端子における硬金属部の平均厚み及び軟金属部の平均厚みを、表１－４に記載の平均厚みとした以外は、比較例７と同様にして、異方性導電接合体を作製し、評価を実施した。結果を表１－４に示す。
Figure JPOXMLDOC01-appb-T000004
 　表１－４において、導電性粒子の個数平均粒子径（Ｄ）、導電性粒子の硬度、硬金属部の硬度、軟金属部の硬度、及び硬金属部の硬度（Ｈ）と軟金属部の硬度（Ｓ）との硬度差（Ｈ－Ｓ）は、以下の通りである。
　導電性粒子の個数平均粒子径（Ｄ）：３．０μｍ
　導電性粒子の硬度：３，９２０Ｎ／ｍｍ２（４００ｋｇｆ／ｍｍ２）
　硬金属部の硬度：Ｈｖ２５０
　軟金属部の硬度：Ｈｖ１００
　硬金属部の硬度（Ｈ）と軟金属部の硬度（Ｓ）との硬度差（Ｈ－Ｓ）：Ｈｖ１５０
（実施例２４）
　実施例４において、第１の電子部品の端子における硬金属部の硬度をＨｖ１００及び軟金属部の硬度をＨｖ１０とした以外は、実施例４と同様にして、異方性導電接合体を作製し、評価した。結果を表１－５に示す。
（実施例２５～２９、及び比較例１３）
　実施例２４において、第１の電子部品の端子における軟金属部の硬度を、表１－５に記載の硬度とした以外は、実施例２４と同様にして、異方性導電接合体を作製し、評価を実施した。結果を表１－５に示す。
Figure JPOXMLDOC01-appb-T000005
 　実施例２４～２９及び比較例１３において、導電性粒子の個数平均粒子径（Ｄ）、導電性粒子の硬度、硬金属部の平均厚み、軟金属部の平均厚み、及び軟金属部の平均厚み〔Ａ（μｍ）〕と導電性粒子の個数平均粒子径〔Ｄ（μｍ）〕との比（Ａ／Ｄ）は、以下の通りである。
　導電性粒子の個数平均粒子径：３．０μｍ
　導電性粒子の硬度：７，８４０Ｎ／ｍｍ２（８００ｋｇｆ／ｍｍ２）
　硬金属部の平均厚み：１１．０μｍ
　軟金属部の平均厚み：１．０μｍ
　軟金属部の平均厚み〔Ａ（μｍ）〕と導電性粒子の個数平均粒子径〔Ｄ（μｍ）〕との比（Ａ／Ｄ）：０．３３
（実施例３０）
　実施例４において、第１の電子部品の端子における硬金属部の硬度をＨｖ１５０及び軟金属部の硬度をＨｖ１００とした以外は、実施例４と同様にして、異方性導電接合体を作製し、評価を実施した。結果を表１－６に示す。
（実施例３１～３５、及び比較例１４～１５）
　実施例３０において、第１の電子部品の端子における硬金属部の硬度を、表１－６に記載の硬度とした以外は、実施例３０と同様にして、異方性導電接合体を作製し、評価を実施した。結果を表１－６に示す。
Figure JPOXMLDOC01-appb-T000006
 　実施例３０～３５及び比較例１４～１５において、導電性粒子の個数平均粒子径（Ｄ）、導電性粒子の硬度、硬金属部の平均厚み、軟金属部の平均厚み、及び軟金属部の平均厚み〔Ａ（μｍ）〕と導電性粒子の個数平均粒子径〔Ｄ（μｍ）〕との比（Ａ／Ｄ）は、以下の通りである。
　導電性粒子の個数平均粒子径（Ｄ）：３．０μｍ
　導電性粒子の硬度：７，８４０Ｎ／ｍｍ２（８００ｋｇｆ／ｍｍ２）
　硬金属部の平均厚み：１１．０μｍ
　軟金属部の平均厚み：１．０μｍ
　軟金属部の平均厚み〔Ａ（μｍ）〕と導電性粒子の個数平均粒子径〔Ｄ（μｍ）〕との比（Ａ／Ｄ）：０．３３
（実施例３６）
　実施例４において、第１の電子部品の端子における硬金属部の硬度をＨｖ２００及び、軟金属部の軟度をＨｖ１００とした以外は、実施例４と同様にして、異方性導電接合体を作製し、評価を実施した。結果を表１－７に示す。
（比較例１６～２０）
　実施例３６において、第１の電子部品の端子における軟金属部の硬度を、表１－７に記載の硬度とした以外は、実施例３６と同様にして、異方性導電接合体を作製し、評価を実施した。結果を表１－７に示す。
Figure JPOXMLDOC01-appb-T000007
 　実施例３６及び比較例１６～２０において、導電性粒子の個数平均粒子径（Ｄ）、導電性粒子の硬度、硬金属部の平均厚み、軟金属部の平均厚み、及び軟金属部の平均厚み〔Ａ（μｍ）〕と導電性粒子の個数平均粒子径〔Ｄ（μｍ）〕との比（Ａ／Ｄ）は、以下の通りである。
　導電性粒子の個数平均粒子径（Ｄ）：３．０μｍ
　導電性粒子の硬度：７，８４０Ｎ／ｍｍ２（８００ｋｇｆ／ｍｍ２）
　硬金属部の平均厚み：１１．０μｍ
　軟金属部の平均厚み：１．０μｍ
　軟金属部の平均厚み〔Ａ（μｍ）〕と導電性粒子の個数平均粒子径〔Ｄ（μｍ）〕との比（Ａ／Ｄ）：０．３３
（実施例３７）
　実施例４において、前記導電性粒子１を前記導電性粒子５とした以外は、実施例４と同様にして、異方性導電接合体を作製し、評価を実施した。結果を表１－８に示す。
（実施例３８）
　実施例４において、前記導電性粒子１を前記導電性粒子６とした以外は、実施例４と同様にして、異方性導電接合体を作製し、評価を実施した。結果を表１－８に示す。
（実施例３９）
　実施例４において、前記導電性粒子１を前記導電性粒子７とした以外は、実施例４と同様にして、異方性導電接合体を作製し、評価を実施した。結果を表１－８に示す。
（実施例４０）
　実施例４において、前記導電性粒子１を前記導電性粒子８とした以外は、実施例４と同様にして、異方性導電接合体を作製し、評価を実施した。結果を表１－８に示す。
（実施例４１）
　実施例４において、前記導電性粒子１を前記導電性粒子９とした以外は、実施例４と同様にして、異方性導電接合体を作製し、評価を実施した。結果を表１－８に示す。
（比較例２１）
　実施例４において、前記導電性粒子１を前記導電性粒子１０とした以外は、実施例４と同様にして、異方性導電接合体を作製し、評価を実施した。結果を表１－８に示す。
Figure JPOXMLDOC01-appb-T000008
 　実施例３７～４１及び比較例２１において、導電性粒子の個数平均粒子径（Ｄ）、硬金属部の硬度、軟金属部の硬度、硬金属部の硬度（Ｈ）と軟金属部の硬度（Ｓ）との硬度差（Ｈ－Ｓ）、及び軟金属部の平均厚み〔Ａ（μｍ）〕と導電性粒子の個数平均粒子径〔Ｄ（μｍ）〕との比（Ａ／Ｄ）は、以下の通りである。
　導電性粒子の個数平均粒子径：３．０μｍ
　硬金属部の硬度：Ｈｖ２５０
　軟金属部の硬度：Ｈｖ１００
　硬金属部の硬度（Ｈ）と軟金属部の硬度（Ｓ）との硬度差（Ｈ－Ｓ）：Ｈｖ１５０
　軟金属部の平均厚み〔Ａ（μｍ）〕と、導電性粒子の個数平均粒子径〔Ｄ（μｍ）〕との比（Ａ／Ｄ）：０．３３
　表１－１～表１－８より、実施例１～４１の異方性導電接合体は、異方性導電材料に含有される導電性粒子の潰れが好適であることから、導通抵抗値（Ω）が低く、接続信頼性に優れることが確認できた。特に、実施例３～５、９～１１、１６～２２、２４～２８、３０～３３、３６の異方性導電接合体は、導電性粒子の潰れが８５℃、８５％ＲＨで５００時間経過後においても良好であり、かつ導通抵抗値（Ω）が０．８～１．３とより低い値を示しているため、より優れていることがわかる。
　一方、表１－１～表１－３より、比較例１～６の異方性導電接合体は、第１の電子部品と端子として、軟金属部のみからなる端子、又は、硬金属部のみからなる端子を使用しているため、８５℃、８５％ＲＨで５００時間経過後の導電性粒子の潰れが弱く、更に、導通抵抗値が高くなっていることがわかる。また、表１－４より、導電性粒子の硬度が５，８８０Ｎ／ｍｍ２（６００ｋｇｆ／ｍｍ２）未満であると、粒子潰れは、良好であっても、導通抵抗値が高くなっていることがわかる。更に、表１－５～表１－７より、比較例１３～２０の異方性導電接合体は、前記硬金属部の硬度と前記軟金属部の硬度とに差異がない、軟金属部の硬度がＨｖ１００よりも大きい、又は、硬金属部の硬度がＨｖ６５０より大きいため、８５℃、８５％ＲＨで５００時間経過後の粒子潰れが弱く、導通抵抗値が高くなっていることがわかる。
　本発明の異方性導電材料を用いた接続方法及び異方性導電接合体は、導電性粒子の潰れが良好に行われ、接続抵抗値が低く、かつ導電性粒子の粒子反発が小さくなり、接続信頼性が向上するため、異方性導電材料の接続方法及び異方性導電接合体として、好適に利用可能である。
　　１　　　第２の電子部品
　　２　　　第２の電子部品の端子
　　３　　　導電性粒子
　　４　　　異方性導電材料
　　５　　　軟金属部
　　６　　　硬金属部
　　７　　　第１の電子部品
　　８　　　異方性導電接合体
　　９　　　基板

Claims (13)

  1. 　第１の電子部品の端子と第２の電子部品の端子とを、異方性導電材料を介して接続した異方性導電接合体であって、
    　前記第１の電子部品の端子が、硬金属部及び前記硬金属部よりも柔らかい軟金属部を有し、
    　前記異方性導電材料が、導電性粒子を有し、
    　前記軟金属部が、前記導電性粒子と接しており、
    　前記硬金属部が、前記第１の電子部品の配線と接しており、
    　前記硬金属部の硬度が、Ｈｖ１００～Ｈｖ６５０であり、
    　前記軟金属部の硬度が、Ｈｖ１０～Ｈｖ１００であり、
    　前記導電性粒子の硬度が、５，８８０Ｎ／ｍｍ２～２６，４６０Ｎ／ｍｍ２であることを特徴とする異方性導電接合体。
  2. 　硬金属部が、平板状であり、接続前の前記硬金属部の平均厚みが、３．０μｍ～１２．０μｍであり、
    　軟金属部が、平板状であり、接続前の前記軟金属部の平均厚みが、０．１μｍ～９．０μｍである請求項１に記載の異方性導電接合体。
  3. 　接続前の導電性粒子の個数平均粒子径が、３．０μｍ～１０．０μｍである請求項１から２のいずれかに記載の異方性導電接合体。
  4. 　接続前の平板状の軟金属部の平均厚み〔Ａ（μｍ）〕と、接続前の導電性粒子の個数平均粒子径〔Ｄ（μｍ）〕との比（Ａ／Ｄ）が、０．０２～１．００である請求項２から３のいずれかに記載の異方性導電接合体。
  5. 　硬金属部の硬度（Ｈ）と軟金属部の硬度（Ｓ）との差（Ｈ－Ｓ）が、Ｈｖ４０以上である請求項１から４のいずれかに記載の異方性導電接合体。
  6. 　接続前の平板状の軟金属部の平均厚み〔Ａ（μｍ）〕と、接続前の導電性粒子の個数平均粒子径〔Ｄ（μｍ）〕との比（Ａ／Ｄ）が、０．０７～０．７０であり、
    　硬金属部の硬度（Ｈ）と軟金属部の硬度（Ｓ）との差（Ｈ－Ｓ）が、Ｈｖ５０～Ｈｖ３５０である請求項２から５のいずれかに記載の異方性導電接合体。
  7. 　第１の電子部品の端子と第２の電子部品の端子とを、異方性導電接続させる接続方法であって、
    　前記第１の電子部品の端子が、硬金属部及び前記硬金属部よりも柔らかい軟金属部を有し、
    　前記硬金属部が、前記第１の電子部品の配線と接しており、
    　前記第１の電子部品の端子及び前記第２の電子部品の端子のいずれか一方の上に、導電性粒子を含有する異方性導電材料を配置する配置工程と、
    　前記異方性導電材料上に他方の前記電子部品を載置する載置工程と、
    　前記軟金属部と前記導電性粒子とが接するように、前記第１の電子部品及び前記第２の電子部品のいずれか一方を、加熱及び押圧する加熱押圧工程とを含み、
    　前記硬金属部の硬度が、Ｈｖ１００～Ｈｖ６５０であり、
    　前記軟金属部の硬度が、Ｈｖ１０～Ｈｖ１００であり、
    　前記導電性粒子の硬度が、５，８８０Ｎ／ｍｍ２～２６，４６０Ｎ／ｍｍ２であることを特徴とする接続方法。
  8. 　硬金属部が、平板状であり、接続前の前記硬金属部の平均厚みが、３．０μｍ～１２．０μｍであり、
    　軟金属部が、平板状であり、接続前の前記軟金属部の平均厚みが、０．１μｍ～９．０μｍである請求項７に記載の接続方法。
  9. 　接続前の導電性粒子の個数平均粒子径が、３．０μｍ～１０．０μｍである請求項７から８のいずれかに記載の接続方法。
  10. 　接続前の導電性粒子の個数平均粒子径〔Ｄ（μｍ）〕と、接続前の平板状の軟金属部の平均厚み〔Ａ（μｍ）〕との比（Ａ／Ｄ）が、０．０２～１．００である請求項８から９のいずれかに記載の接続方法。
  11. 　硬金属部の硬度（Ｈ）と軟金属部の硬度（Ｓ）との差（Ｈ－Ｓ）が、Ｈｖ４０以上である請求項７から１０のいずれかに記載の接続方法。
  12. 　接続前の平板状の軟金属部の平均厚み〔Ａ（μｍ）〕と、接続前の導電性粒子の個数平均粒子径〔Ｄ（μｍ）〕との比（Ａ／Ｄ）が、０．０７～０．７０であり、
    　硬金属部の硬度（Ｈ）と軟金属部の硬度（Ｓ）との差（Ｈ－Ｓ）が、Ｈｖ５０～Ｈｖ３５０である請求項８から１１のいずれかに記載の接続方法。
  13. 　請求項７から１２のいずれかに記載の接続方法により製造されたことを特徴とする異方性導電接合体。
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