CN104145329B - 使用各向异性导电材料的连接方法及各向异性导电接合体 - Google Patents

使用各向异性导电材料的连接方法及各向异性导电接合体 Download PDF

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CN104145329B
CN104145329B CN201380012602.2A CN201380012602A CN104145329B CN 104145329 B CN104145329 B CN 104145329B CN 201380012602 A CN201380012602 A CN 201380012602A CN 104145329 B CN104145329 B CN 104145329B
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metal portion
anisotropic conductive
hardness
electroconductive particle
mentioned
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CN104145329A (zh
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工藤克哉
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Dexerials Corp
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Dexerials Corp
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    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/30—Assembling printed circuits with electric components, e.g. with resistor
    • H05K3/32—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits
    • H05K3/321—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits by conductive adhesives
    • H05K3/323—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits by conductive adhesives by applying an anisotropic conductive adhesive layer over an array of pads
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Abstract

本发明提供一种各向异性导电接合体，其为经由各向异性导电材料将第一电子零件的端子和第二电子零件的端子连接的各向异性导电接合体，其中，所述第一电子零件的端子具有硬金属部及比所述硬金属部更柔软的软金属部，所述各向异性导电材料具有导电性粒子，所述软金属部与所述导电性粒子连接，所述硬金属部与所述第一电子零件的配线连接，所述硬金属部的硬度为Hv100～650，所述软金属部的硬度为Hv10～100，所述导电性粒子的硬度为5,880N/mm2～26,460N/mm2。

Description

使用各向异性导电材料的连接方法及各向异性导电接合体
技术领域
本发明涉及使用各向异性导电材料的连接方法及各向异性导电接合体。
背景技术
目前，作为将电子零件与基板连接的手段，使用将分散有导电性粒子的热固化性树脂涂布于剥离膜上的带状的连接材料(例如，各向异性导电膜(ACF：AnisotropicConductive Film)等各向异性导电材料)。
例如，该各向异性导电材料以将挠性印刷基板(FPC)或IC芯片的端子与形成于LCD面板的玻璃基板上的(ITO(Indium Tin Oxide)电极连接的情况为主，被用于与将各种端子彼此粘接并同时电连接的情况。
近年来，电子零件正持续更小型化、集成化。因此，上述电子零件具有的电极，其彼此相邻的电极间的间距正持续变得更小(微细间距)。作为微细间距的配线，为了对应高电压及高电流，使用具有高硬度的配线(例如，Al、Cu、非结晶ITO、IZO等)。但是，在使用高硬度的配线的情况下，需要在上述各向异性导电材料中使用高硬度的导电性粒子。于是，在如目前那样各种端子仅由Au形成的情况下，因为Au为软金属，所以上述导电性粒子会被埋没于上述端子中，不能充分进行上述导电性粒子的崩塌，从各向异性导电连接的初期开始连接电阻值就变高，存在连接可靠性降低这样的问题。另一方面，如果提高上述端子的硬度，则上述导电性粒子的崩塌变得过剩，因此，各向异性导电连接的期间的粒子排斥变大，存在连接可靠性降低这样的问题。
作为防止各种端子埋没的技术，公开有一种将形成于第一基板的第一金制突起状电极和形成于第二基板的第二金制突起状电极粘着的电子器件，与上述第二金制突起状电极的硬度相比，上述第一金制突起状电极的硬度为形成较高值者(参照专利文献1)。另外，作为上述第一金制突起状电极，公开有在硬度比金高的金属的接合面侧或全表面上被覆金的电极。
但是，该情况下，因直接粘着上述第一金制突起状电极和上述第二金制突起状电极，所以不能预见使用上述各向异性导电材料，依然残留导电性粒子会埋没于端子，导电性粒子的崩塌不能充分进行，从各向异性导电连接的初期连接电阻值就变高，连接可靠性会降低的问题，及粒子排斥变大，各向异性导电连接的期间的连接可靠性会降低的问题。
因此，在微细间距的各向异性导电连接中，目前正寻求提供使用导电性粒子的崩塌会良好地进行、从各向异性导电连接的初期连接电阻值就低、且各向异性导电连接的期间的导电性粒子的粒子排斥变小、连接可靠性提高的各向异性导电材料的连接方法及各向异性导电接合体。
现有技术文献
专利文献
专利文献1：日本专利公开第2004-193161号公报
发明内容
发明所要解决的课题
本发明以解决现有的所述诸多问题，实现以下目的为课题。即，本发明的目的在于，提供使用各向异性导电材料的连接方法及各向异性导电接合体，在微细间距的各向异性导电连接中，导电性粒子的崩塌会良好地进行，从各向异性导电连接的初期连接电阻值就低，且各向异性导电连接的期间的导电性粒子的粒子排斥变小，连接可靠性提高。
作为用于解决上述课题的手段，如下。即：
<1>一种各向异性导电接合体，其为经由各向异性导电材料将第一电子零件的端子和第二电子零件的端子连接的各向异性导电接合体，其特征在于，
所述第一电子零件的端子具有硬金属部及比所述硬金属部柔软的软金属部，
所述各向异性导电材料具有导电性粒子，
所述软金属部与所述导电性粒子连接，
所述硬金属部与所述第一电子零件的配线连接，
所述硬金属部的硬度为Hv100～Hv650，
所述软金属部的硬度为Hv10～Hv100，
所述导电性粒子的硬度为5,880N/mm2～26,460N/mm2。
<2>根据所述<1>所述的各向异性导电接合体，其中，
硬金属部为平板状，且连接前的所述硬金属部的平均厚度为3.0μm～12.0μm，
软金属部为平板状，且连接前的所述软金属部的平均厚度为0.1μm～9.0μm。
<3>根据所述<1>或<2>所述的各向异性导电接合体，其中，
连接前的导电性粒子的个数平均粒径为3.0μm～10.0μm。
<4>根据所述<2>或<3>所述的各向异性导电接合体，其中，
连接前的平板状的软金属部的平均厚度[A(μm)]和连接前的导电性粒子的个数平均粒径[D(μm)]之比(A/D)为0.02～1.00。
<5>根据所述<1>～<4>中任一项所述的各向异性导电接合体，其中，
硬金属部的硬度(H)和软金属部的硬度(S)之差(H-S)为Hv40以上。
<6>根据所述<2>～<5>中任一项所述的各向异性导电接合体，其中，
连接前的平板状的软金属部的平均厚度[A(μm)]和连接前的导电性粒子的个数平均粒径[D(μm)]之比(A/D)为0.07～0.70，
硬金属部的硬度(H)和软金属部的硬度(S)之差(H-S)为Hv50～Hv350。
<7>一种连接方法，将第一电子零件的端子和第二电子零件的端子进行各向异性导电连接，其特征在于，
所述第一电子零件的端子具有硬金属部及比所述硬金属部柔软的软金属部，
所述硬金属部与所述第一电子零件的配线连接，
该方法包含：
配置工序，在所述第一电子零件的端子及所述第二电子零件的端子的任一方上配置含有导电性粒子的各向异性导电材料；
载置工序，在所述各向异性导电材料上载置另一所述电子零件：
加热挤压工序，以所述软金属部和所述导电性粒子连接的方式对所述第一电子零件及所述第二电子零件的任一方进行加热及挤压，
所述硬金属部的硬度为Hv100～Hv650，
所述软金属部的硬度为Hv10～Hv100，
所述导电性粒子的硬度为5,880N/mm2～26,460N/mm2。
<8>根据所述<7>所述的连接方法，其中，
硬金属部为平板状，且连接前的所述硬金属部的平均厚度为3.0μm～12.0μm，
软金属部为平板状，且连接前的所述软金属部的平均厚度为0.1μm～9.0μm。
<9>根据所述<7>或<8>所述的连接方法，其中，
连接前的导电性粒子的个数平均粒径为3.0μm～10.0μm。
<10>根据所述<8>或<9>所述的连接方法，其中，
连接前的平板状的软金属部的平均厚度[A(μm)]和连接前的导电性粒子的个数平均粒径[D(μm)]之比(A/D)为0.02～1.00。
<11>根据所述<7>～<10>中任一项所述的连接方法，其中，
硬金属部的硬度(H)和软金属部的硬度(S)之差(H-S)为Hv40以上。
<12>根据所述<8>～<11>中任一项所述的连接方法，其中，
连接前的平板状的软金属部的平均厚度[A(μm)]和连接前的导电性粒子的个数平均粒径[D(μm)]之比(A/D)为0.07～0.70，
硬金属部的硬度(H)和软金属部的硬度(S)之差(H-S)为Hv50～Hv350。
<13>一种各向异性导电接合体，其特征在于，通过所述<7>～<12>中任一项所述的连接方法制造。
发明效果
根据本发明，可提供一种各向异性导电材料的连接方法及各向异性导电接合体，其可解决现有的所述诸多问题，实现所述目的，在微细间距的各向异性导电连接中，导电性粒子的崩塌会良好地进行，从各向异性导电连接的初期连接电阻值就低，且各向异性导电连接的期间的导电性粒子的粒子排斥变小，连接可靠性提高。
附图说明
图1是用于说明用于本发明的第一电子零件的一个实例的概略剖面图。
图2A是用于说明本发明的连接方法的一个实例的概略剖面图。
图2B是用于说明本发明的连接方法的一个实例的概略剖面图。
图2C是用于说明本发明的连接方法的一个实例的概略剖面图。
具体实施方式
(各向异性导电接合体)
本发明的各向异性导电接合体至少具有第一电子零件、第二电子零件、各向异性导电材料，进而根据需要具有其它部件。
上述各向异性导电接合体是经由上述各向异性导电材料将上述第一电子零件的端子和上述第二电子零件的端子连接的接合体。
<第一电子零件>
作为上述第一电子零件，只要是具有端子，且成为使用上述各向异性导电材料的各向异性导电连接的对象的电子零件，则就没有特别限制，可以根据目的适宜选择，例如可举出IC芯片、TAB带、液晶面板等。作为上述IC芯片，例如可举出平板显示器(FPD)中的液晶画面控制用IC芯片等。
-第一电子零件的端子-
作为上述第一电子零件的端子，是成为使用上述各向异性导电材料的各向异性导电连接的对象的电子零件的端子，只要具有硬金属部及比上述硬金属部更柔软的软金属部，就没有特别限制，可根据目的适宜选择。
--硬金属部--
作为上述硬金属部，只要与上述第一电子零件的配线连接，且硬度为Hv100～Hv650，就没有特别限制，可根据目的适宜选择。
作为上述硬金属部的材质，例如可举出Ni、Pd、Cu、Ti、Fe、Cr、铝Al、In等。它们可以单独使用一种，也可以并用两种以上。
作为上述硬金属部的硬度，优选为Hv100～Hv450。
--硬度(Hv)--
上述硬度是维氏硬度。作为上述维氏硬度的测定方法，可举例JISZ2244所记载的方法等。
---硬金属部的形状等---
作为上述硬金属部的形状，没有特别限制，可根据目的适宜选择，例如可举出平板状、凹板状、凸板状、凹凸板状、波板状等。其中优选平板状。
作为上述硬金属部的结构，没有特别限制，可根据目的适宜选择，例如可举出由一种单独的部件形成的结构、由两种以上的部件形成的结构等。
作为上述硬金属部的平均厚度，没有特别限制，可根据目的适宜选择，但从上述各向异性导电接合体的耐久性及各向异性导电连接时的导电性的观点来看，优选为3.0μm～12.0μm，更优选为5.0μm～11.0μm，特别优选为10.0μm～11.0μm。另外，上述硬金属部的平均厚度是上述第一电子零件的端子和上述第二电子零件的端子连接之前所测定的平均厚度。
上述硬金属部的平均厚度例如可通过从上述硬金属部选择任意十点，测定各个点的厚度，并算出测定结果的厚度平均值而求得。
--软金属部--
作为上述软金属部，只要与导电性粒子连接，且硬度为Hv10～Hv100，就没有特别限制，可根据目的适宜选择。
作为上述软金属部的材质，例如可举出An、Ag、焊料等。它们可以单独使用一种，也可以并用两种以上。
作为上述硬金属部的硬度(H)和上述软金属部的硬度(S)之差(H-S)，优选为Hv40以上，更优选为Hv50～Hv350。
--软金属部的形状等--
作为上述软金属部的形状，没有特别限制，可根据目的适宜选择，例如可举出平板状、凹板状、凸板状、凹凸板状、波板状等。其中优选平板状。
作为上述软金属部的结构，没有特别限制，可根据目的适宜选择，例如可举出由一种单独的部件形成的结构、由两种以上的部件形成的结构等。
作为上述软金属部的平均厚度，没有特别限制，可根据目的适宜选择，但从上述各向异性导电接合体的耐久性及各向异性导电连接时的导电性的观点来看，优选为0.1μm～9.0μm，更优选为0.2μm～7.0μm，特别优选为1.0μm～2.0μm。此外，上述软金属部的平均厚度是在上述第一电子零件的端子和上述第二电子零件的端子连接之前所测定的平均厚度。
作为上述软金属部的平均厚度的测定方法，例如可通过从上述软金属部选择任意十点，测定各个点的厚度，并算出测定结果的厚度的平均值而求得。
<第二电子零件>
作为上述第二电子零件，只要是具有端子，且成为使用上述各向异性导电材料的各向异性导电连接的对象的电子零件，就没有特别限制，可根据目的适宜选择，例如可举出与上述第一电子零件同样的电子零件、ITO玻璃基板、非结晶ITO玻璃基板、IZO玻璃基板、其它玻璃图案基板等。其中优选非结晶ITO玻璃基板、IZO玻璃基板。
-第二电子零件的端子-
作为上述第二电子零件的端子，只要是成为使用上述各向异性导电材料的各向异性导电连接的对象的电子零件的端子，就没有特别限制，可根据目的适宜选择，例如可举出与上述第一电子零件的端子同样的端子等。
<各向异性导电材料>
上述各向异性导电材料至少含有导电性粒子，进而根据需要还含有其它成分。
作为上述各向异性导电材料的形态，没有特别限制，可根据目的适宜选择，例如可举出膜状、液体状等。
-导电性粒子-
作为上述导电性粒子，只要硬度为5,880N/mm2～26,460N/mm2(600kgf/mm2～2,700kgf/mm2)，就没有特别限制，可根据目的适宜选择。
作为上述导电性粒子，没有特别限制，可根据目的适宜选择，例如可举出金属粒子(Ni、Fe、Cu、Al、Sn、Pb、Cr、Co等)、树脂核镀金属粒子等。作为上述树脂核镀金属粒子中的树脂核的材质，例如可举出二乙烯基苯聚合物、聚苯乙烯树脂、环氧树脂、苯酚树脂、丙烯酸树脂、丙烯腈·苯乙烯(AS)树脂、苯胍胺树脂等。它们可以单独使用一种，也可以并用两种以上。
上述导电性粒子的硬度是作为20％K值(压缩弹性变形特性K20)求得的硬度，例如可通过以下方法来测定。
上述硬度是上述导电性粒子的粒子直径位移20％时的压缩弹性变形特性K20，使用微小压缩试验机(MCT-W201，株式会社岛津制作所制)，以直径50μm的金刚石制圆柱的平滑端面，压缩速度0.225g/秒，测定压缩获得的粒子时的荷重值、压缩位移等，由下述式求得的值。即，20％K值通过测定粒子的20％位移所需的荷重及压缩变形量而求得。
K20＝(3/√2)×(S20 -3/2)×(R-1/2)×F20
F20：粒子的20％位移所需的荷重(N)
S20：粒子的20％位移下的压缩变形量(mm)
R：粒子的半径(mm)
另外，上述K20值是普遍且定量地表示粒子的硬度的值。
--导电性粒子的形状等--
作为上述导电性粒子的形状，没有特别限制，可根据目的适宜选择。
作为上述导电性粒子的个数平均粒径，没有特别限制，可根据目的适宜选择，但从上述各向异性导电接合体的耐久性及各向异性导电连接时的导电性的观点来看，优选为3.0μm～12.0μm。
另外，上述导电性粒子的个数平均粒径为各向异性导电连接前所测定的个数平均粒径。
上述导电性粒子的个数平均粒径例如可以由使用激光衍射测得的粒度分布来测定。
作为上述软金属部的平均厚度[A(μm)]和上述导电性粒子的个数平均粒径[D(μm)]之比(A/D)，没有特别限制，可根据目的适宜选择，但优选为0.02～1.00，更优选为0.07～0.70。如果上述比在上述更优选的范围内，则从连接可靠性更优异的观点来看，是有利的。
-其它成分-
作为上述其它成分，没有特别限制，可根据目的适宜选择，例如可举出膜形成树脂、热固化性树脂、固化剂、硅烷偶联剂等。
--膜形成树脂--
作为上述膜形成树脂，没有特别限制，可根据目的适宜选择，例如可举出苯氧基树脂、不饱和聚酯树脂、饱和聚酯树脂、氨基甲酸酯树脂、丁二烯树脂、聚酰亚胺树脂、聚酰胺树脂、聚烯烃树脂等。上述膜形成树脂系可以单独使用一种，也可以并用两种以上。其中，从制膜性、加工性、连接可靠性的观点来看，优选苯氧基树脂。
上述苯氧基树脂是指由双酚A和表氯醇合成的树脂，可以使用适宜合成的物质，也可以使用市售品。
作为上述各向异性导电材料中的膜形成树脂的含量，没有特别限制，可根据目的适宜选择。
--热固化性树脂--
作为上述热固化性树脂，没有特别限制，可根据目的适宜选择，例如可举出环氧树脂、丙烯酸树脂等。
---环氧树脂---
作为上述环氧树脂，没有特别限制，可根据目的适宜选择，例如可举出双酚A型环氧树脂、双酚F型环氧树脂、酚醛清漆型环氧树脂、萘型环氧树脂、它们的改性环氧树脂等的热固化性环氧树脂等。它们可以单独使用一种，也可以并用两种以上。
作为上述各向异性导电材料中的上述环氧树脂的含量，没有特别限制，可根据目的适宜选择。
---丙烯酸树脂---
作为上述丙烯酸树脂，没有特别限制，可根据目的适宜选择，例如可举出(甲基)丙烯酸甲酯、(甲基)丙烯酸乙酯、(甲基)丙烯酸异丙酯、(甲基)丙烯酸异丁酯、含磷酸基的(甲基)丙烯酸酯、乙二醇二(甲基)丙烯酸酯、二乙二醇二(甲基)丙烯酸酯、三羟甲基丙烷三(甲基)丙烯酸酯、二羟甲基三环癸烷二(甲基)丙烯酸酯、四亚甲基二醇四(甲基)丙烯酸酯、2-羟基-1,3-二(甲基)丙烯酰氧基丙烷、2,2-双[4-((甲基)丙烯酰氧基甲氧基)苯基]丙烷、2,2-双[4-((甲基)丙烯酰氧基乙氧基)苯基]丙烷、(甲基)丙烯酸二环戊烯酯、(甲基)丙烯酸三环癸酯、三((甲基)丙烯酰氧乙基)异氰脲酸酯、氨基甲酸酯(甲基)丙烯酸酯、环氧(甲基)丙烯酸酯等。它们可以单独使用一种，也可以并用两种以上。
作为上述各向异性导电材料中的丙烯酸树脂的含量，没有特别限制，可根据目的适宜选择。
--固化剂--
作为上述固化剂，没有特别限制，可根据目的适宜选择，例如可举出阳离子类固化剂、自由基类固化剂等。
---阳离子类固化剂---
作为上述阳离子类固化剂，没有特别限制，可根据目的适宜选择，例如可举出锍盐、盐、三乙基胺等烷基胺、吡啶、咪唑等。
上述阳离子类固化剂优选与作为上述热固化性树脂的环氧树脂并用。
作为上述各向异性导电材料中的阳离子类固化剂的含量，没有特别限制，可根据目的适宜选择。
---自由基类固化剂---
作为上述自由基类固化剂，没有特别限制，可根据目的适宜选择，例如可举出有机过氧化物等。
作为上述有机过氧化物，没有特别限制，可根据目的适宜选择，例如可举出月桂酰基过氧化物、丁基过氧化物、苄基过氧化物等。
上述自由基类固化剂优选与作为上述热固化性树脂的丙烯酸树脂并用。
作为上述各向异性导电材料中的自由基类固化剂的含量，没有特别限制，可根据目的适宜选择。
--硅烷偶联剂--
作为上述硅烷偶联剂，没有特别限制，可根据目的适宜选择，例如可举出环氧基类硅烷偶联剂、丙烯酸类硅烷偶联剂、硫醇类硅烷偶联剂、胺类硅烷偶联剂等。
作为上述各向异性导电材料中的硅烷偶联剂的含量，没有特别限制，可根据目的适宜选择。
本发明的各向异性导电接合体中，上述第一电子零件的端子具有上述硬金属部及上述软金属部，且由于上述硬金属部的硬度、上述软金属部的硬度及上述导电性粒子的硬度在特定范围内，所以通过将上述导电性粒子适度埋没于上述软金属部等，可适度崩塌上述各向异性导电材料中所含的导电性粒子，可以抑制崩塌不足及崩塌过剩。由此，可解决现有的问题，即在将以上述软金属部和上述各向异性导电材料连接的方式载置的上述第一电子零件的端子压入上述各向异性导电材料时，由于上述导电性粒子埋没于上述第一电子零件的端子，从而不能充分获得上述导电性粒子的崩塌，会成为高电阻的问题；及由于上述导电性粒子过度崩塌，从而上述导电性粒子的排斥变大，连接可靠性会恶化的问题。其结果，在微细间距的各向异性导电连接中，导电性粒子的崩塌可以良好地进行，从各向异性导电连接的初期连接电阻值就降低，且各向异性导电连接的期间的导电性粒子的粒子排斥变小，可使连接可靠性提升。
(使用各向异性导电材料的连接方法)
使用本发明的各向异性导电材料的连接方法至少包含配置工序、载置工序及加热挤压工序，进而根据需要还含有其它工序。
上述连接方法是将第一电子零件的端子和第二电子零件的端子进行各向异性导电连接的连接方法，经由各向异性导电材料将上述第一电子零件的端子和上述第二电子零件的端子连接的方法。
上述连接方法可适当用于本发明的各向异性导电接合体的制造。
<配置工序>
作为上述配置工序，只要是在上述第一电子零件的端子及上述第二电子零件的端子的任一方上配置含有导电性粒子的上述各向异性导电材料的工序，就没有特别限制，可根据目的适宜选择，例如可举出贴附、涂布等。
-第一电子零件-
作为上述第一电子零件，没有特别限制，可根据目的适宜选择，例如可举出与本发明的各向异性导电接合体的说明中所记载的上述第一电子零件相同的零件等。
即，上述第一电子零件具有端子。上述端子具有硬金属部及比上述硬金属部柔软的软金属部。上述硬金属部与上述第一电子零件的配线连接。上述硬金属部的硬度为Hv100～Hv650。上述软金属部的硬度为Hv10～Hv100。
-第二电子零件-
作为上述第二电子零件，没有特别限制，可根据目的适宜选择，例如可举出与本发明的各向异性导电接合体的说明中所记载的第二电子零件相同的零件等。
-各向异性导电材料-
作为上述各向异性导电材料，只要是具有导电性粒子的各向异性导电材料，就没有特别限制，可根据目的适宜选择，例如可举出与本发明的各向异性导电接合体的说明中所记载的各向异性导电材料相同的材料等。
上述导电性粒子的硬度为5,880N/mm2～26,460N/mm2。
在上述配置工序中，在上述第一电子零件的端子上配置含有上述导电性粒子的上述各向异性导电材料的情况下，以将上述软金属部和上述各向异性导电材料连接的方式进行配置。
<载置工序>
作为上述载置工序，只要是将在上述配置工序中未配置的电子零件(另一电子零件)载置于上述各向异性导电材料上的工序，就没有特别限制，可根据目的适宜选择。
在上述载置工序中，在使用上述第一电子零件作为另一电子零件的情况下，上述第一电子零件以上述软金属部和上述各向异性导电材料连接的方式进行载置。
此时，上述导电性粒子未被加热及挤压，上述导电性粒子未崩塌，因此，未进行各向异性导电连接。
<加热挤压工序>
作为上述加热挤压工序，只要是以上述软金属部和上述导电性粒子连接的方式对上述第一电子零件及上述第二电子零件的任一方进行加热及挤压的工序，就没有特别限制，可根据目的适宜选择，例如，可通过加热挤压部件进行加热及挤压。
作为上述加热挤压部件，例如可举出具有加热机构的挤压部件等。作为具有上述加热机构的挤压部件，例如可举出加热工具等。
作为上述加热的温度，没有特别限制，可根据目的适宜选择，但优选为140℃～200℃。
作为上述挤压的压力，没有特别限制，可根据目的适宜选择，但优选为0.1MPa～80MPa。
作为上述加热及挤压的时间，没有特别限制，可根据目的适宜选择，例如可举出0.5秒～120秒。
参照附图对将第一电子零件的端子和第二电子零件的端子经由各向异性导电材料连接的本发明连接方法的一个实例进行说明。
图2A～图2C是用于说明通过本发明的连接方法(各向异性导电接合体的制造方法)制造本发明的各向异性导电接合体的一个实例的概略剖面图。首先，在第二电子零件1的端子2上配置含有导电性粒子3的各向异性导电材料4(图2A)。接着，在各向异性导电材料4上，以具有硬金属部6及软金属部5的第一电子零件7的端子的软金属部5与各向异性导电材料4连接的方式载置第一电子零件7。在该时刻，第二电子零件1的端子2和第一电子零件7的端子因导电性粒子3未被加热及挤压，导电性粒子3未崩塌，所以尚未进行各向异性导电连接(图2B)。而且，通过从第一电子零件7上利用加热挤压部件(未图示)进行加热及挤压，第一电子零件7的软金属部5和各向异性导电材料4所含的导电性粒子3会接触，第二电子零件1和第一电子零件7经由各向异性导电材料4被各向异性导电连接，制造各向异性导电接合体8(图2C)。
[实施例]
下面，说明本发明的实施例，但本发明并不受这些实施例任何限定。
[硬度(Hv)]
第一电子零件的端子中的硬金属部及软金属部的硬度使用维氏硬度计(商品名：VMT-X，Matsuzawa社制)来测定。
具体而言，使用无电解镀敷法来制作测定样品，选择测定对象的任意十点，依据JIS Z2244记载的测定方法，使用上述维氏硬度计来测定硬度。通过算出上述十点中的维氏硬度的平均值，求得上述硬度。
[硬度(N/mm2(kgf/mm2))]
各向异性导电材料中所含的导电性粒子的硬度(20％K值)通过以下的方法测定。
上述硬度是上述导电性粒子的粒子直径位移20％时的压缩弹性变形特性K20，使用微小压缩试验机(商品名：MCT-W201、株式会社岛津制作所制)，用直径50μm的金刚石制圆柱的平滑端面，以压缩速度0.225g/秒，测定压缩得到的粒子时的荷重值、压缩位移等，并由下述式求得。即，20％K值通过测定粒子的20％位移所需的荷重及压缩变形量而求得。
K20＝(3/√2)×(S20 -3/2)×(R-1/2)×F20
F20：粒子的20％位移所需的荷重(N)
S20：粒子的20％位移下的压缩变形量(mm)
R：粒子的半径(mm)
[平均厚度]
各向异性导电连接前的第一电子零件的端子中的软金属部的厚度及硬金属部的厚度使用金属显微镜(商品名：MX51，奥林巴斯株式会社制)观察第一电子零件的剖面而测得。选择任意的十点，测定各点的厚度，算出测定结果的厚度的平均值，求得平均厚度。
[导电性粒子的个数平均粒径(D)]
导电性粒子的个数平均粒径由使用激光衍射测定的粒度分布来测定。
[硬金属部及软金属部的硬度(Hv)的调整方法]
如日本专利公开第2009-71093号公报的第[0030]段所记载，进行热处理，适宜调整凸块硬度。另外，关于软金属部，使用将硬度调整为Hv10～100的金(Au)。关于硬金属部，使用将硬度调整为Hv100～650的钯(Pd)。
(导电性粒子1的制造例)
<树脂核粒子1的制作>
在调整了二乙烯苯、苯乙烯及甲基丙烯酸丁酯的混合比的溶液中，投入作为聚合引发剂的过氧化苯甲酰基，一边均匀搅拌一边进行加热，通过进行聚合反应而获得微粒子分散液。将上述微粒子分散液进行过滤并减压干燥，由此获得作为微粒子的凝集体的嵌段(ブロック)体。另外，通过粉碎上述嵌段体，制作作为树脂核粒子1的个数平均粒径3.0μm的二乙烯苯类树脂粒子。
<树脂核镀镍粒子(导电性粒子1)的制作>
通过浸渍法使钯催化剂负载于个数平均粒径3.0μm的二乙烯苯类树脂粒子(5.0g)。其次，使用由硫酸镍六水合物、次亚磷酸钠、柠檬酸钠、三乙醇胺及硝酸铊调制的无电解镀镍液(pH12，电镀液温50℃)对该树脂粒子进行无电解镀镍，制作表面形成有各种磷含量的镀镍层(金属层)的导电性粒子1。所获得的导电性粒子1的个数平均粒径为3.0μm，硬度为7,840N/mm2。
(导电性粒子2～3的制造例)
除适宜变更树脂核粒子1的制作中的均匀搅拌的旋转数以外，与导电性粒子1的制造例同样地制作个数平均粒径为5.0μm及硬度为7,840N/mm2的导电性粒子2。
除适宜变更树脂核粒子1的制作中的均匀搅拌的旋转数以外，与导电性粒子1的制造例同样地制作个数平均粒径为10.0μm及硬度为7,840N/mm2的导电性粒子3。
(导电性粒子4～10的制造例)
除适宜变更二乙烯苯、苯乙烯及甲基丙烯酸丁酯的混合比以外，与导电性粒子1的制造例同样地制作个数平均粒径为3.0μm及硬度为3,920N/mm2的导电性粒子4。
除适宜变更二乙烯苯、苯乙烯及甲基丙烯酸丁酯的混合比以外，与导电性粒子1的制造例同样地制作个数平均粒径为3.0μm及硬度为5,880N/mm2的导电性粒子5。
除适宜变更二乙烯苯、苯乙烯及甲基丙烯酸丁酯的混合比以外，与导电性粒子1的制造例同样地制作个数平均粒径为3.0μm及硬度为13,720N/mm2的导电性粒子6。
除适宜变更二乙烯苯、苯乙烯及甲基丙烯酸丁酯的混合比以外，与导电性粒子1的制造例同样地制作个数平均粒径为3.0μm及硬度为19,600N/mm2的导电性粒子7。
除适宜变更二乙烯苯、苯乙烯及甲基丙烯酸丁酯的混合比以外，与导电性粒子1的制造例同样地制作个数平均粒径为3.0μm及硬度为24,500N/mm2的导电性粒子8。
除适宜变更二乙烯苯、苯乙烯及甲基丙烯酸丁酯的混合比以外，与导电性粒子1的制造例同样地制作个数平均粒径为3.0μm及硬度为26,460N/mm2的导电性粒子9。
除适宜变更二乙烯苯、苯乙烯及甲基丙烯酸丁酯的混合比以外，与导电性粒子1的制造例同样地制作个数平均粒径为3.0μm及硬度为29,400N/mm2的导电性粒子10。
(实施例1)
<各向异性导电材料的制作>
在由作为上述膜形成树脂的苯氧基树脂(商品名：PKHH，フェノキシアソシエーツ社制)30质量份、作为上述热固化性树脂的萘型环氧树脂(商品名：HP4032DD，DIC株式会社制)30质量份、作为上述固化剂的咪唑固化剂(商品名：ノバキュア3941HP，旭化成イーマテリアルズ株式会社制)30质量份及硅烷偶联剂(商品名：A-187，モメンティブ·パフォーマンス·マテリアルズ社制)1质量份构成的粘接剂中，分散35质量份的上述导电性粒子1，获得不挥发分量50质量％的乙酸乙酯-甲苯混合溶液。
接着，将该混合溶液涂布于厚度50μm的PET膜上之后，在80℃的烘箱中干燥5分钟，制作平均厚度20μm的各向异性导电膜(各向异性导电材料)。
<第一电子零件的端子的制作>
作为半导体元件，使用IC芯片(外形1.8mm×20.0mm、厚度0.5mm、凸块高度12.0μm、凸块外形85.0μm×30.0μm)。通过丝网印刷在上述半导体元件的凸块上，以平均厚度成为9.0μm的方式镀敷硬度为Hv250的钯(Pd)作为硬金属部。接着，在上述硬金属部上，以平均厚度成为3.0μm的方式镀敷硬度为Hv100的金(Au)作为软金属部，制作具有高度24.0μm、外形97.0μm×42.0μm的端子的第一电子零件。
此外，图1表示制作的第一电子零件的概略剖面图。在图1中，第一电子零件7为在基板9上依次层叠平板状的硬金属部6及平板状的软金属部5的结构。
<各向异性导电接合体的制造>
在通过溅镀而于厚度0.7mm的玻璃基板(商品名：1737F，Corning社制)上使非结晶ITO制膜的ITO涂层玻璃基板(第二电子零件)上，配置实施例1中制作的各向异性导电材料，将实施例1中制作的第一电子零件载置于上述各向异性导电材料上，以压装条件200℃、60MPa、5秒进行各向异性导电连接，制造各向异性导电接合体。
具体而言，在上述ITO涂层玻璃基板上配置各向异性导电材料之后，进一步在上述各向异性导电材料上暂时固定上述第一电子零件，以加热工具25mm宽度，使用缓冲材料(厚度50μm的特氟龙(注册商标))从上述第一电子零件上以压装条件200℃、60MPa、5秒(工具速度30mm/sec、平台温度40℃)进行各向异性导电连接，制造各向异性导电接合体。另外，上述工具速度是从上述第一电子零件上通过上述加热工具进行挤压时的挤压速度。
<评价>
对制作的各向异性导电材料进行以下的评价。结果示于表1-1。
[导电性粒子的崩塌程度]
使用金属显微镜(商品名：MX51，奥林巴斯株式会社制)对各向异性导电材料中所含的导电性粒子测定各向异性导电连接前的导电性粒子的直径，接着，在各向异性导电连接后，在初期、85℃、85％RH下经过500小时后，测定上述导电性粒子的宽度方向的长度，由下述式(1)求得初期、85℃、85％RH下经过500小时后的导电性粒子的崩塌程度。
导电性粒子的崩塌程度(％)＝(各向异性导电连接后的导电性粒子的宽度方向的长度/各向异性导电连接前的导电性粒子的直径)×100……式(1)
另外，各向异性导电连接后的导电性粒子的宽度方向的长度为与各向异性导电连接时的第一电子零件和ITO涂层玻璃基板正交方向的上述导电性粒子的长度。
基于上述评价结果，上述导电性粒子的崩塌程度以下列五阶段进行评价。
强：导电性粒子的崩塌程度(％)为50％以上
稍强：导电性粒子的崩塌程度(％)为40％以上且低于50％
良好：导电性粒子的崩塌程度(％)为30％以上且低于40％
稍弱：导电性粒子的崩塌程度(％)为20％以上且低于30％
弱：导电性粒子的崩塌程度(％)低于10％
[导通电阻值]
使用数字万用表(商品名：数字万用表7555，横河电机株式会社制)对实施例1中制造的各向异性导电接合体测定16ch的端子间的电阻值(导通电阻值，Ω)。具体而言，以四端子法流通电流1mA时，测定初期、85℃、85％RH下经过500小时后的电阻值(导通电阻值，Ω)。
(实施例2～6)
除了将实施例1的第一电子零件的端子的硬金属部的平均厚度及软金属部的平均厚度设为表1-1所记载的平均厚度以外，与实施例1同样地制作各向异性导电接合体，并实施评价。结果示于表1-1。
(比较例1)
除了未制作实施例1的第一电子零件的端子的硬金属部并将软金属部的平均厚度设为12.0μm以外，与实施例1同样地制作各向异性导电接合体，实施评价。结果示于表1-1。
(比较例2)
除了将实施例1的第一电子零件的端子的硬金属部的平均厚度设为12.0μm且未制作软金属部以外，与实施例1同样地制作各向异性导电接合体，并实施评价。结果示于表1-1。
[表1-1]
在实施例1～6及比较例1～2中，导电性粒子的个数平均粒径(D)、导电性粒子的硬度、硬金属部的硬度、软金属部的硬度及硬金属部的硬度(H)和软金属部的硬度(S)的硬度差(H-S)如下。
导电性粒子的个数平均粒径(D)：3.0μm
导电性粒子的硬度：7,840N/mm2(800kgf/mm2)
硬金属部的硬度：Hv250
软金属部的硬度：Hv100
硬金属部的硬度(H)和软金属部的硬度(S)的硬度差(H-S)：Hv150
(实施例7)
除了将实施例1的导电性粒子1作为上述导电性粒子2，且将第一电子零件的端子的硬金属部的平均厚度设为7.5μm及软金属部的平均厚度设为4.5μm以外，与实施例1同样地制作各向异性导电接合体，实施评价。结果示于表1-2。
(实施例8～13)
除了将实施例7的第一电子零件的端子的硬金属部的平均厚度及软金属部的平均厚度设为表1-2所记载的平均厚度以外，与实施例7同样地制作各向异性导电接合体，实施评价。结果示于表1-2。
(比较例3)
除了未制作实施例7的第一电子零件的端子中的硬金属部，并将软金属部的平均厚度设为12.0μm以外，与实施例7同样地制作各向异性导电接合体，并实施评价。结果示于表1-2。
(比较例4)
除了将实施例7的第一电子零件的端子的硬金属部的平均厚度设为12.0μm，且未制作软金属部以外，与实施例7同样地制作各向异性导电接体，并实施评价。结果示于表1-2。
[表1-2]
在实施例7～13及比较例3～4中，导电性粒子的个数平均粒径(D)、导电性粒子的硬度、硬金属部的硬度、软金属部的硬度及硬金属部的硬度(H)和软金属部的硬度(S)的硬度差(H-S)如下。
导电性粒子的个数平均粒径(D)：5.0μm
导电性粒子的硬度：7,840N/mm2(800kgf/mm2)
硬金属部的硬度：Hv250
软金属部的硬度：Hv100
硬金属部的硬度(H)和软金属部的硬度(S)的硬度差(H-S)：Hv150
(实施例14)
除了将实施例1的导电性粒子1设为上述导电性粒子3，且将第一电子零件的端子的硬金属部的平均厚度设为3.0μm及软金属部的平均厚度设为9.0μm以外，与实施例1同样地制作各向异性导电接合体，并实施评价。结果示于表1-3。
(实施例15～23)
除了将实施例14的第一电子零件的端子的硬金属部的平均厚度及软金属部的平均厚度设为表1-3所记载的平均厚度以外，与实施例14同样地制作各向异性导电接合体，并实施评价。结果示于表1-3。
(比较例5)
除了未制作实施例14的第一电子零件的端子的硬金属部，并将软金属部的平均厚度设为12.0μm以外，与实施例14同样地制作各向异性导电接合体，并实施评价。结果示于表1-3。
(比较例6)
除了将实施例14的第一电子零件的端子的硬金属部的平均厚度设为12.0μm，并未制作软金属部以外，与实施例14同样地制作各向异性导电接合体，并实施评价。结果示于表1-3。
[表1-3]
在实施例14～23及比较例5～6中，导电性粒子的个数平均粒径(D)、导电性粒子的硬度、硬金属部的硬度、软金属部的硬度及硬金属部的硬度(H)和软金属部的硬度(S)的硬度差(H-S)如下。
导电性粒子的个数平均粒径(D)：10.0μm
导电性粒子的硬度：7,840N/mm2(800kgf/mm2)
硬金属部的硬度：Hv250
软金属部的硬度：Hv100
硬金属部的硬度(H)和软金属部的硬度(S)的硬度差(H-S)：Hv150
(比较例7)
除了将实施例1的上述导电性粒子1设为上述导电性粒子4，进而将第一电子零件的端子的硬金属部的平均厚度设为3.0μm及软金属部的平均厚度设为9.0μm以外，与实施例1同样地制作各向异性导电接合体，并实施评价。结果示于表1-4。
(比较例8～12)
除了将比较例7的第一电子零件的端子的硬金属部的平均厚度及软金属部的平均厚度设为表1-4中记载的平均厚度以外，与比较例7同样地制作各向异性导电接合体，并实施评价。结果示于表1-4。
[表1-4]
在表1-4中，导电性粒子的个数平均粒径(D)、导电性粒子的硬度、硬金属部的硬度、软金属部的硬度及硬金属部的硬度(H)和软金属部的硬度(S)的硬度差(H-S)如下。
导电性粒子的个数平均粒径(D)：3.0μm
导电性粒子的硬度：3,920N/mm2(400kgf/mm2)
硬金属部的硬度：Hv250
软金属部的硬度：Hv100
硬金属部的硬度(H)和软金属部的硬度(S)的硬度差(H-S)：Hv150
(实施例24)
除了将实施例4的第一电子零件的端子的硬金属部的硬度设为Hv100及软金属部的硬度设为Hv10以外，与实施例4同样地制作各向异性导电接合体，并实施评价。结果示于表1-5。
(实施例25-29及比较例13)
除了将实施例24的第一电子零件的端子的软金属部的硬度设为表1-5中记载的硬度以外，与实施例24同样地制作各向异性导电接合体，并实施评价。结果示于表1-5。
[表1-5]
在实施例24～29及比较例13中，导电性粒子的个数平均粒径(D)、导电性粒子的硬度、硬金属部的平均厚度、软金属部的平均厚度及软金属部的平均厚度[A(μm)]和导电性粒子的个数平均粒径[D(μm)]之比(A/D)如下。
导电性粒子的个数平均粒径：3.0μm
导电性粒子的硬度：7,840N/mm2(800kgf/mm2)
硬金属部的平均厚度：11.0μm
软金属部的平均厚度：1.0μm
软金属部的平均厚度[A(μm)]和导电性粒子的个数平均粒径[D(μm)]之比(A/D)：0.33
(实施例30)
除了将实施例4的第一电子零件的端子的硬金属部的硬度设为Hv150及软金属部的硬度设为Hv100以外，与实施例4同样地制作各向异性导电接合体，并实施评价。结果示于表1-6。
(实施例31～35及比较例14～15)
除了将实施例30的第一电子零件的端子的硬金属部的硬度设为表1-6中记载的硬度以外，与实施例30同样地制作各向异性导电接合体，并实施评价。结果示于表1-6。
[表1-6]
在实施例30～35及比较例14～15中，导电性粒子的个数平均粒径(D)、导电性粒子的硬度、硬金属部的平均厚度、软金属部的平均厚度及软金属部的平均厚度[A(μm)]和导电性粒子的个数平均粒径[D(μm)]之比(A/D)如下。
导电性粒子的个数平均粒径(D)：3.0μm
导电性粒子的硬度：7,840N/mm2(800kgf/mm2)
硬金属部的平均厚度：11.0μm
软金属部的平均厚度：1.0μm
软金属部的平均厚度[A(μm)]和导电性粒子的个数平均粒径[D(μm)]之比(A/D)：0.33
(实施例36)
除了将实施例4的第一电子零件的端子的硬金属部的硬度设为Hv200及软金属部的软度设为Hv100以外，与实施例4同样地制作各向异性导电接合体，并实施评价。结果示于表1-7。
(比较例16-20)
除了将实施例36的第一电子零件的端子的软金属部的硬度设为表1-7中记载的硬度以外，与实施例36同样地制作各向异性导电接合体，并实施评价。结果示于表1-7。
[表1-7]
在实施例36及比较例16～20中，导电性粒子的个数平均粒径(D)、导电性粒子的硬度、硬金属部的平均厚度、软金属部的平均厚度及软金属部的平均厚度[A(μm)]和导电性粒子的个数平均粒径[D(μm)]之比(A/D)如下。
导电性粒子的个数平均粒径(D)：3.0μm
导电性粒子的硬度：7,840N/mm2(800kgf/mm2)
硬金属部的平均厚度：11.0μm
软金属部的平均厚度：1.0μm
软金属部的平均厚度[A(μm)]和导电性粒子的个数平均粒径[D(μm)]之比(A/D)：0.33
(实施例37)
除了将实施例4的上述导电性粒子1设为上述导电性粒子5以外，与实施例4同样地制作各向异性导电接合体，并实施评价。结果示于表1-8。
(实施例38)
除了将实施例4的导电性粒子1设为上述导电性粒子6以外，与实施例4同样地制作各向异性导电接合体，并实施评价。结果示于表1-8。
(实施例39)
除了将实施例4的导电性粒子1设为上述导电性粒子7以外，与实施例4同样地制作各向异性导电接合体，并实施评价。结果示于表1-8。
(实施例40)
除了将实施例4的导电性粒子1设为上述导电性粒子8以外，与实施例4同样地制作各向异性导电接合体，并实施评价。结果示于表1-8。
(实施例41)
除了将实施例4的导电性粒子1设为上述导电性粒子9以外，与实施例4同样地制作各向异性导电接合体，并实施评价。结果示于表1-8。
(比较例21)
除了将实施例4的导电性粒子1设为上述导电性粒子10以外，与实施例4同样地制作各向异性导电接合体，并实施评价。结果示于表1-8。
[表1-8]
在实施例37～41及比较例21中，导电性粒子的个数平均粒径(D)、硬金属部的硬度、软金属部的硬度、硬金属部的硬度(H)和软金属部的硬度(S)的硬度差(H-S)及软金属部的平均厚度[A(μm)]和导电性粒子的个数平均粒径[D(μm)]之比(A/D)如下。
导电性粒子的个数平均粒径：3.0μm
硬金属部的硬度：Hv250
软金属部的硬度：Hv100
硬金属部的硬度(H)和软金属部的硬度(S)的硬度差(H-S)：Hv150
软金属部的平均厚度[A(μm)]和导电性粒子的个数平均粒径[D(μm)]之比(A/D)：0.33
由表1-1～表1-8可知，实施例1～41的各向异性导电接合体因各向异性导电材料中所含的导电性粒子的崩塌适当，所以可确认导通电阻值(Ω)低，连接可靠性优异。特别是实施例3～5、9～11、16～22、24～28、30～33、36的各向异性导电接合体，导电性粒子的崩塌在85℃、85％RH经过500小时后也为良好，且导通电阻值(Ω)显示0.8～1.3这样较低的值，可知更优异。
另一方面，由表1-1～表1-3可知，比较例1～6的各向异性导电接合体，作为第一电子零件的端子，使用仅由软金属部构成的端子或仅由硬金属部构成的端子，因此，在85℃、85％RH经过500小时后的导电性粒子的崩塌弱，而且导通电阻值变高。另外，由表1-4可知，如果导电性粒子的硬度低于5,880N/mm2(600kgf/mm2)，则粒子崩塌即使为良好，导通电阻值也会变高。此外，由表1-5～表1-7可知，比较例13～20的各向异性导电接合体的上述硬金属部的硬度和上述软金属部的硬度无差异，软金属部的硬度比Hv100大，或者硬金属部的硬度比Hv650大，因此，在85℃、85％RH经过500小时后的粒子崩塌弱，且导通电阻值变高。
产业上的可利用性
使用本发明的各向异性导电材料的连接方法及各向异性导电接合体，因导电性粒子的崩塌良好地进行、连接电阻值低、且导电性粒子的粒子排斥小、连接可靠性提升，所以可适当地用作各向异性导电材料的连接方法及各向异性导电接合体。
符号说明
1 第二电子零件
2 第二电子零件的端子
3 导电性粒子
4 各向异性导电材料
5 软金属部
6 硬金属部
7 第一电子零件
8 各向异性导电接合体
9 基板

Claims (13)

1.一种各向异性导电接合体，其为经由各向异性导电材料将第一电子零件的端子和第二电子零件的端子连接的各向异性导电接合体，其特征在于，
所述第一电子零件的端子具有硬金属部及比所述硬金属部柔软的软金属部，
所述各向异性导电材料具有导电性粒子，
所述软金属部与所述导电性粒子连接，
所述硬金属部与所述第一电子零件的配线连接，
所述硬金属部的硬度为Hv100～Hv650，
所述软金属部的硬度为Hv10～Hv100，
所述导电性粒子的硬度为5,880N/mm2～26,460N/mm2，
与所述软金属部连接的所述导电性粒子崩塌。
2.根据权利要求1所述的各向异性导电接合体，其中，
硬金属部为平板状，且连接前的所述硬金属部的平均厚度为3.0μm～12.0μm，
软金属部为平板状，且连接前的所述软金属部的平均厚度为0.1μm～9.0μm。
3.根据权利要求1所述的各向异性导电接合体，其中，
连接前的导电性粒子的个数平均粒径为3.0μm～10.0μm。
4.根据权利要求2所述的各向异性导电接合体，其中，
连接前的平板状的软金属部的平均厚度[A(μm)]和连接前的导电性粒子的个数平均粒径[D(μm)]之比(A/D)为0.02～1.00。
5.根据权利要求1所述的各向异性导电接合体，其中，
硬金属部的硬度(H)和软金属部的硬度(S)之差(H-S)为Hv40以上。
6.根据权利要求2所述的各向异性导电接合体，其中，
连接前的平板状的软金属部的平均厚度[A(μm)]和连接前的导电性粒子的个数平均粒径[D(μm)]之比(A/D)为0.07～0.70，
硬金属部的硬度(H)和软金属部的硬度(S)之差(H-S)为Hv50～Hv350。
7.一种连接方法，其为将第一电子零件的端子和第二电子零件的端子进行各向异性导电连接的连接方法，其特征在于，
所述第一电子零件的端子具有硬金属部及比所述硬金属部柔软的软金属部，
所述硬金属部与所述第一电子零件的配线连接，
该方法包含：
配置工序，在所述第一电子零件的端子及所述第二电子零件的端子的任一方上配置含有导电性粒子的各向异性导电材料；
载置工序，在所述各向异性导电材料上载置另一所述电子零件：
加热挤压工序，以所述软金属部和所述导电性粒子连接的方式对所述第一电子零件及所述第二电子零件的任一方进行加热及挤压，
所述硬金属部的硬度为Hv100～Hv650，
所述软金属部的硬度为Hv10～Hv100，
所述导电性粒子的硬度为5,880N/mm2～26,460N/mm2，
在所述加热挤压工序中，与所述软金属部连接的所述导电性粒子崩塌。
8.根据权利要求7所述的连接方法，其中，
硬金属部为平板状，且连接前的所述硬金属部的平均厚度为3.0μm～12.0μm，
软金属部为平板状，且连接前的所述软金属部的平均厚度为0.1μm～9.0μm。
9.根据权利要求7所述的连接方法，其中，
连接前的导电性粒子的个数平均粒径为3.0μm～10.0μm。
10.根据权利要求8所述的连接方法，其中，
连接前的导电性粒子的个数平均粒径[D(μm)]和连接前的平板状的软金属部的平均厚度[A(μm)]之比(A/D)为0.02～1.00。
11.根据权利要求7所述的连接方法，其中，
硬金属部的硬度(H)和软金属部的硬度(S)之差(H-S)为Hv40以上。
12.根据权利要求8所述的连接方法，其中，
连接前的平板状的软金属部的平均厚度[A(μm)]和连接前的导电性粒子的个数平均粒径[D(μm)]之比(A/D)为0.07～0.70，
硬金属部的硬度(H)和软金属部的硬度(S)之差(H-S)为Hv50～Hv350。
13.一种各向异性导电接合体，其特征在于，通过权利要求7～12中任一项所述的连接方法制造。
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