KR101994507B1 - 이방성 도전 재료를 사용한 접속 방법 및 이방성 도전 접합체 - Google Patents

이방성 도전 재료를 사용한 접속 방법 및 이방성 도전 접합체 Download PDF

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KR101994507B1
KR101994507B1 KR1020147027523A KR20147027523A KR101994507B1 KR 101994507 B1 KR101994507 B1 KR 101994507B1 KR 1020147027523 A KR1020147027523 A KR 1020147027523A KR 20147027523 A KR20147027523 A KR 20147027523A KR 101994507 B1 KR101994507 B1 KR 101994507B1
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hardness
conductive particles
light metal
electronic component
anisotropic conductive
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KR1020147027523A
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Korean (ko)
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KR20140138822A (ko
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가쯔야 구도
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데쿠세리아루즈 가부시키가이샤
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    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/30—Assembling printed circuits with electric components, e.g. with resistor
    • H05K3/32—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits
    • H05K3/321—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits by conductive adhesives
    • H05K3/323—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits by conductive adhesives by applying an anisotropic conductive adhesive layer over an array of pads
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    • H01L2224/8319—Arrangement of the layer connectors prior to mounting
    • H01L2224/83192—Arrangement of the layer connectors prior to mounting wherein the layer connectors are disposed only on another item or body to be connected to the semiconductor or solid-state body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/832—Applying energy for connecting
    • H01L2224/83201—Compression bonding
    • H01L2224/83203—Thermocompression bonding, e.g. diffusion bonding, pressure joining, thermocompression welding or solid-state welding
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/838—Bonding techniques
    • H01L2224/8385—Bonding techniques using a polymer adhesive, e.g. an adhesive based on silicone, epoxy, polyimide, polyester
    • H01L2224/83851—Bonding techniques using a polymer adhesive, e.g. an adhesive based on silicone, epoxy, polyimide, polyester being an anisotropic conductive adhesive
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
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    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/838—Bonding techniques
    • H01L2224/8385—Bonding techniques using a polymer adhesive, e.g. an adhesive based on silicone, epoxy, polyimide, polyester
    • H01L2224/83855—Hardening the adhesive by curing, i.e. thermosetting
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    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/83905—Combinations of bonding methods provided for in at least two different groups from H01L2224/838 - H01L2224/83904
    • H01L2224/83907—Intermediate bonding, i.e. intermediate bonding step for temporarily bonding the semiconductor or solid-state body, followed by at least a further bonding step
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    • H01L2224/91—Methods for connecting semiconductor or solid state bodies including different methods provided for in two or more of groups H01L2224/80 - H01L2224/90
    • H01L2224/92—Specific sequence of method steps
    • H01L2224/921—Connecting a surface with connectors of different types
    • H01L2224/9211—Parallel connecting processes
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    • H01L24/10—Bump connectors ; Manufacturing methods related thereto
    • H01L24/11—Manufacturing methods
    • H—ELECTRICITY
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    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/10—Bump connectors ; Manufacturing methods related thereto
    • H01L24/15—Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L24/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • H—ELECTRICITY
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    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L24/27—Manufacturing methods
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    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L24/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L24/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
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    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/151—Die mounting substrate
    • H01L2924/156—Material
    • H01L2924/15786—Material with a principal constituent of the material being a non metallic, non metalloid inorganic material
    • H01L2924/15788—Glasses, e.g. amorphous oxides, nitrides or fluorides
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    • H01L2924/30—Technical effects
    • H01L2924/38—Effects and problems related to the device integration
    • H01L2924/381—Pitch distance

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  • Manufacturing & Machinery (AREA)
  • Wire Bonding (AREA)
  • Conductive Materials (AREA)
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JP6945276B2 (ja) 2016-03-31 2021-10-06 デクセリアルズ株式会社 異方性導電接続構造体
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Publication number Priority date Publication date Assignee Title
JP2005311293A (ja) 2004-03-26 2005-11-04 Seiko Epson Corp 半導体チップ、半導体装置、半導体装置の製造方法及び電子機器

Family Cites Families (12)

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Publication number Priority date Publication date Assignee Title
JP3766123B2 (ja) * 1995-10-03 2006-04-12 積水化学工業株式会社 電極間の導電接続方法及び導電性微粒子
JPH10107072A (ja) * 1996-10-02 1998-04-24 Oki Electric Ind Co Ltd 半導体素子の接続構造および接続方法
WO1999004424A1 (en) * 1997-07-15 1999-01-28 Hitachi, Ltd. Semiconductor device, mounting structure thereof and method of fabrication thereof
JP3486346B2 (ja) * 1998-07-16 2004-01-13 ソニーケミカル株式会社 ベアチップ実装構造
JP2000286299A (ja) * 1999-03-30 2000-10-13 Matsushita Electric Ind Co Ltd 半導体装置の接続方法
JP3624818B2 (ja) * 1999-10-12 2005-03-02 ソニーケミカル株式会社 異方性導電接続材料、接続体、およびその製造方法
JP3810064B2 (ja) * 2002-03-15 2006-08-16 松下電器産業株式会社 液晶表示装置
JP4608178B2 (ja) 2002-12-06 2011-01-05 旭化成エレクトロニクス株式会社 電子デバイスおよび電子デバイス形成方法
JP2005072262A (ja) * 2003-08-25 2005-03-17 Seiko Epson Corp 回路基板およびその製造方法、電気光学装置、電子機器
JP2005191541A (ja) * 2003-12-05 2005-07-14 Seiko Epson Corp 半導体装置、半導体チップ、半導体装置の製造方法及び電子機器
KR100877264B1 (ko) * 2007-05-09 2009-01-09 엘에스엠트론 주식회사 저압 본딩용 전극을 구비한 반도체 디바이스 및 이를이용한 반도체 패키지
KR101041146B1 (ko) * 2009-09-02 2011-06-13 삼성모바일디스플레이주식회사 표시 장치

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005311293A (ja) 2004-03-26 2005-11-04 Seiko Epson Corp 半導体チップ、半導体装置、半導体装置の製造方法及び電子機器

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