JPH1197480A - 導電性接着剤による相互接続構造物 - Google Patents
導電性接着剤による相互接続構造物Info
- Publication number
- JPH1197480A JPH1197480A JP10195296A JP19529698A JPH1197480A JP H1197480 A JPH1197480 A JP H1197480A JP 10195296 A JP10195296 A JP 10195296A JP 19529698 A JP19529698 A JP 19529698A JP H1197480 A JPH1197480 A JP H1197480A
- Authority
- JP
- Japan
- Prior art keywords
- conductive
- bonding
- conductive adhesive
- polymer resin
- particles
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000000853 adhesive Substances 0.000 title claims description 48
- 230000001070 adhesive effect Effects 0.000 title claims description 48
- 239000000463 material Substances 0.000 claims abstract description 41
- 239000002245 particle Substances 0.000 claims abstract description 36
- 229910052737 gold Inorganic materials 0.000 claims abstract description 32
- 239000010949 copper Substances 0.000 claims abstract description 28
- 239000011159 matrix material Substances 0.000 claims abstract description 26
- 238000000034 method Methods 0.000 claims abstract description 25
- 229910052802 copper Inorganic materials 0.000 claims abstract description 20
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims abstract description 19
- 229920000642 polymer Polymers 0.000 claims abstract description 13
- 239000004642 Polyimide Substances 0.000 claims abstract description 10
- 229920001721 polyimide Polymers 0.000 claims abstract description 10
- 239000004973 liquid crystal related substance Substances 0.000 claims abstract description 9
- 229920001187 thermosetting polymer Polymers 0.000 claims abstract description 6
- 229920000728 polyester Polymers 0.000 claims abstract description 4
- 239000004634 thermosetting polymer Substances 0.000 claims abstract 4
- 229910000679 solder Inorganic materials 0.000 claims description 28
- 239000011248 coating agent Substances 0.000 claims description 22
- 238000000576 coating method Methods 0.000 claims description 22
- 239000002952 polymeric resin Substances 0.000 claims description 19
- 229910052718 tin Inorganic materials 0.000 claims description 17
- 229920003002 synthetic resin Polymers 0.000 claims description 16
- 239000011521 glass Substances 0.000 claims description 14
- 229910052738 indium Inorganic materials 0.000 claims description 9
- PPBRXRYQALVLMV-UHFFFAOYSA-N Styrene Chemical compound C=CC1=CC=CC=C1 PPBRXRYQALVLMV-UHFFFAOYSA-N 0.000 claims description 8
- 229910052763 palladium Inorganic materials 0.000 claims description 8
- 229910052787 antimony Inorganic materials 0.000 claims description 7
- 230000004907 flux Effects 0.000 claims description 7
- 239000004033 plastic Substances 0.000 claims description 7
- 229910052697 platinum Inorganic materials 0.000 claims description 7
- 229920001169 thermoplastic Polymers 0.000 claims description 7
- 229910052782 aluminium Inorganic materials 0.000 claims description 6
- 229910052797 bismuth Inorganic materials 0.000 claims description 6
- 239000010409 thin film Substances 0.000 claims description 6
- 239000004593 Epoxy Substances 0.000 claims description 5
- 229910045601 alloy Inorganic materials 0.000 claims description 5
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 5
- 229920005989 resin Polymers 0.000 claims description 5
- 239000011347 resin Substances 0.000 claims description 5
- 238000007650 screen-printing Methods 0.000 claims description 5
- 229910052709 silver Inorganic materials 0.000 claims description 5
- 239000004416 thermosoftening plastic Substances 0.000 claims description 5
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims description 4
- 239000000956 alloy Substances 0.000 claims description 4
- 125000003118 aryl group Chemical group 0.000 claims description 4
- 229920002678 cellulose Polymers 0.000 claims description 4
- 239000001913 cellulose Substances 0.000 claims description 4
- 229920005610 lignin Polymers 0.000 claims description 4
- 239000003921 oil Substances 0.000 claims description 4
- 235000019198 oils Nutrition 0.000 claims description 4
- 125000000951 phenoxy group Chemical group [H]C1=C([H])C([H])=C(O*)C([H])=C1[H] 0.000 claims description 4
- 229910052698 phosphorus Inorganic materials 0.000 claims description 4
- 235000015112 vegetable and seed oil Nutrition 0.000 claims description 4
- 239000008158 vegetable oil Substances 0.000 claims description 4
- 239000002023 wood Substances 0.000 claims description 4
- 229910052725 zinc Inorganic materials 0.000 claims description 4
- 238000000151 deposition Methods 0.000 claims description 3
- 230000008021 deposition Effects 0.000 claims description 3
- 229910052745 lead Inorganic materials 0.000 claims description 2
- 238000001465 metallisation Methods 0.000 claims description 2
- 229910052719 titanium Inorganic materials 0.000 claims description 2
- KPUWHANPEXNPJT-UHFFFAOYSA-N disiloxane Chemical class [SiH3]O[SiH3] KPUWHANPEXNPJT-UHFFFAOYSA-N 0.000 claims 3
- 238000007639 printing Methods 0.000 claims 2
- 229910052796 boron Inorganic materials 0.000 claims 1
- 238000004100 electronic packaging Methods 0.000 claims 1
- 238000004519 manufacturing process Methods 0.000 claims 1
- 229910052757 nitrogen Inorganic materials 0.000 claims 1
- 239000004065 semiconductor Substances 0.000 claims 1
- 239000010931 gold Substances 0.000 abstract description 37
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 abstract description 23
- 238000006243 chemical reaction Methods 0.000 abstract description 6
- 239000011231 conductive filler Substances 0.000 abstract description 4
- 239000004020 conductor Substances 0.000 abstract description 2
- 238000007747 plating Methods 0.000 abstract 4
- 239000007767 bonding agent Substances 0.000 abstract 2
- 239000012815 thermoplastic material Substances 0.000 abstract 1
- 239000000758 substrate Substances 0.000 description 17
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 9
- 230000005496 eutectics Effects 0.000 description 6
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 5
- 239000000919 ceramic Substances 0.000 description 5
- 229910052759 nickel Inorganic materials 0.000 description 5
- 239000000843 powder Substances 0.000 description 5
- 230000008569 process Effects 0.000 description 5
- 239000000945 filler Substances 0.000 description 4
- 238000010406 interfacial reaction Methods 0.000 description 4
- 230000008018 melting Effects 0.000 description 4
- 238000002844 melting Methods 0.000 description 4
- KDLHZDBZIXYQEI-UHFFFAOYSA-N palladium Substances [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 4
- 230000008646 thermal stress Effects 0.000 description 4
- 230000008901 benefit Effects 0.000 description 3
- 238000004140 cleaning Methods 0.000 description 3
- 229910000765 intermetallic Inorganic materials 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 239000000203 mixture Substances 0.000 description 3
- 239000007787 solid Substances 0.000 description 3
- 239000002904 solvent Substances 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 2
- 229910001128 Sn alloy Inorganic materials 0.000 description 2
- 230000004075 alteration Effects 0.000 description 2
- 210000001787 dendrite Anatomy 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 239000010408 film Substances 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 238000004806 packaging method and process Methods 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 239000004332 silver Substances 0.000 description 2
- 229910015363 Au—Sn Inorganic materials 0.000 description 1
- 229910016338 Bi—Sn Inorganic materials 0.000 description 1
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- 229910017755 Cu-Sn Inorganic materials 0.000 description 1
- 229910017927 Cu—Sn Inorganic materials 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- 229910018100 Ni-Sn Inorganic materials 0.000 description 1
- 229910018532 Ni—Sn Inorganic materials 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 238000004026 adhesive bonding Methods 0.000 description 1
- 238000010420 art technique Methods 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- JWVAUCBYEDDGAD-UHFFFAOYSA-N bismuth tin Chemical compound [Sn].[Bi] JWVAUCBYEDDGAD-UHFFFAOYSA-N 0.000 description 1
- 150000001732 carboxylic acid derivatives Chemical class 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 239000011651 chromium Substances 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- KUNSUQLRTQLHQQ-UHFFFAOYSA-N copper tin Chemical compound [Cu].[Sn] KUNSUQLRTQLHQQ-UHFFFAOYSA-N 0.000 description 1
- 238000005336 cracking Methods 0.000 description 1
- 238000002788 crimping Methods 0.000 description 1
- 230000006735 deficit Effects 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 239000006185 dispersion Substances 0.000 description 1
- 238000004090 dissolution Methods 0.000 description 1
- 125000003700 epoxy group Chemical group 0.000 description 1
- 239000012530 fluid Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000007731 hot pressing Methods 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- RHZWSUVWRRXEJF-UHFFFAOYSA-N indium tin Chemical compound [In].[Sn] RHZWSUVWRRXEJF-UHFFFAOYSA-N 0.000 description 1
- LQBJWKCYZGMFEV-UHFFFAOYSA-N lead tin Chemical compound [Sn].[Pb] LQBJWKCYZGMFEV-UHFFFAOYSA-N 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 238000005272 metallurgy Methods 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000004377 microelectronic Methods 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Substances [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 239000003566 sealing material Substances 0.000 description 1
- -1 siloxanes Chemical class 0.000 description 1
- 238000005476 soldering Methods 0.000 description 1
- 230000035882 stress Effects 0.000 description 1
- 239000004094 surface-active agent Substances 0.000 description 1
- 238000005382 thermal cycling Methods 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- MAKDTFFYCIMFQP-UHFFFAOYSA-N titanium tungsten Chemical compound [Ti].[W] MAKDTFFYCIMFQP-UHFFFAOYSA-N 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L24/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L24/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
- H01L24/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/30—Assembling printed circuits with electric components, e.g. with resistor
- H05K3/32—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits
- H05K3/321—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits by conductive adhesives
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K35/00—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting
- B23K35/02—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by mechanical features, e.g. shape
- B23K35/0222—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by mechanical features, e.g. shape for use in soldering, brazing
- B23K35/0244—Powders, particles or spheres; Preforms made therefrom
- B23K35/025—Pastes, creams, slurries
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- H—ELECTRICITY
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- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
- H01L2224/05001—Internal layers
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- H01L2224/02—Bonding areas; Manufacturing methods related thereto
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- H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
- H01L2224/05001—Internal layers
- H01L2224/0502—Disposition
- H01L2224/05022—Disposition the internal layer being at least partially embedded in the surface
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- H01L2224/0502—Disposition
- H01L2224/05026—Disposition the internal layer being disposed in a recess of the surface
- H01L2224/05027—Disposition the internal layer being disposed in a recess of the surface the internal layer extending out of an opening
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- H01L2224/05001—Internal layers
- H01L2224/05075—Plural internal layers
- H01L2224/0508—Plural internal layers being stacked
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- H01L2224/0554—External layer
- H01L2224/0556—Disposition
- H01L2224/05571—Disposition the external layer being disposed in a recess of the surface
- H01L2224/05572—Disposition the external layer being disposed in a recess of the surface the external layer extending out of an opening
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- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
- H01L2224/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
- H01L2224/13001—Core members of the bump connector
- H01L2224/13099—Material
- H01L2224/131—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2224/13101—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of less than 400°C
- H01L2224/13109—Indium [In] as principal constituent
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- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
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- H01L2224/29101—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of less than 400°C
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- H01L2224/291—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
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- H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
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- H01L2224/291—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
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Abstract
接合を形成する。 【解決手段】 テープ自動化ボンディング(TAB)パ
ッケージ、フリップ・チップ・パッケージ、及びアクテ
ィブ・マトリックス液晶ディスプレイ(AMLCD)パ
ネルのための相互接続方式が開示される。能動的な電子
装置とその要素との間に電気的相互接続を形成するため
に導電性接着剤が用いられる。導電性接着剤はポリマ樹
脂、ノー・クリーンはんだフラックス、及び複数の導電
整流子から成る混合物であって良い。導電整流子は導電
性の可融被覆を有し、これは導電性粒子相互間、及び基
板に対して冶金接合を与える。導電性接着剤を用いる利
点にはボンディング圧力及びボンディング温度の低減、
界面反応の抑制冶金接合の促進、接合の信頼性の強化、
その他が含まれる。
Description
次の出願に含まれる内容を含んでいる。
理番号 YO997-212)、はめ込み可能なボールの格子アレ
イ相互接続のための構造物、材料及び方法、2.米国特
許出願番号052,175(出願人整理番号 YO997-213)、ボー
ル格子アレイ相互接続のための構造物、材料及び用途。
集積回路装置を外部回路に接続する手法に関し、更に具
体的に言えば、導電性接着材料を用いるテープ自動化ボ
ンディング(TAB)相互接続、及び導電性接着材料を
用いる崩壊制御チップ接続(controlled collapse chip
connection、C4)またはフリップ・チップ相互接続
に関するものである。
気的相互接続はマイクロエレクトロニック・パッケージ
ングの重要な技術であり、これはコンピュータ・システ
ム等の電子的システム全体の性能及び信頼性を示してい
ることが屡々ある。現在の所、シリコンICを回路の次
のレベルに電気的に相互接続するために、3つの技術が
一般に実施されている。これらは、ワイア・ボンディン
グ、テープ自動化ボンディング、及びフリップ・チップ
または崩壊制御チップ接続(C4)である。
ための最も広く用いられる方法である。ボンディングの
エネルギ供給源如何に応じてワイア・ボンディング手法
は3つの方法に分けられる。これらは熱加圧、超音波、
及びサーモソニック・ボンディングである。熱加圧にお
いては熱及び圧力がボンディング・エネルギの主要なエ
ネルギ原として加えられ、ボール及びウエッジ(楔)ボ
ンディングのために金線が一般に用いられる。金線は線
の先端でボールを形成するように最初溶融される。ボー
ルがボンディングの毛細管を通して加熱される間にボー
ルはチップの上のアルミ・パッドに押しつけられる。金
線の他端は次いで金メッキされたリード・フレームまた
は基板に熱圧着によりボンディングされる。調節される
べきボンディングのパラメータは、工具の温度、垂直の
力、及びボンディングの時間である。垂直の力は主とし
てワイアに可塑性ひずみを生じ、これはボンディングの
界面に密接な接触が生じることを可能にする。300な
いし500°Cという比較的高いボンディング温度はボ
ンディング界面における内部拡散を促進して冶金性の接
合を形成する。この温度はまたワイアにおける可塑性ひ
ずみを促進する働きも持つ。しかしながら、2つの異な
る金属が接合されると、相互接続の所に好ましくない金
属間相が形成されることがある。
は加熱されない。ボンディング工具に取り付けられた変
換器から与えられる振動エネルギが垂直の力と結合して
2つの金属表面の間に接合を形成する。超音波ボンディ
ングにおいて最も一般的に用いられる冶金はチップ上の
アルミ・パッド或いはリード・フレームまたは基板上の
金メッキされたパッドへのアルミ・ワイアのボンディン
グである。超音波ボンディングによりボンディングされ
たワイアには相当な程度の可塑性ひずみも観察される。
ワイアが加熱される熱圧着ボンディングと異なり、接合
段階は150°Cまで加熱されるのが普通である。この
接合段階での加熱は接合しにくい表面の接合性を改善す
るものとして知られている。超音波ボンディングと比べ
ると、サーモソニック・ボンディングは装置の機械的損
傷、例えばチップのひび割れ、を受けやすいために最小
の超音波エネルギまたは垂直力が必要とされる場合に用
いられる。
ための最も簡単で経済的な方法であるが、それは2つの
基本的な制限を持っている。a)それは所与寸法のチッ
プに対して設けることのできる相互接続の最大数がチッ
プの周辺長により制限されること、及びb)それは逐次
的なプロセスであり、作られる相互接続の数にスループ
ットが依存する事である。TAB技術はこれらの制限を
緩和する。それはそのボンディング方式が大量のまたは
多重のボンディングであり、より精細なピッチの相互接
続を可能にするからである。TABでは2種類の相互接
続が作られる。1つは内側リード・ボンド(ILB)で
あり、これはチップをテープに接続する。もう1つは外
側リード・ボンド(OLB)であり、これはテープを基
板またはボードに接続する。TAB ILB接合に最も
一般的に用いられる冶金構造は錫メッキされた銅/ポリ
イミドのテープとチップ上の電気メッキされた金のバン
プとである。図1はチップ11上の金のバンプ13にボ
ンディングされた銅17/ポリイミド15のテープを用
いたILBボンディングを示す。銅表面を保護するため
に錫または金の薄い層がその上に被覆される。サーモー
ド19により熱及び力が加えられ、銅のビーム17を加
熱すると同時にそれを金のバンプ13に押しつける。テ
ープが錫で被覆される場合、ボンディングは錫層が溶融
して金のバンプと反応する事によって形成される。所要
のボンディング温度は250ないし300°Cの範囲で
数秒間である。所要のボンディング圧力は20ないし3
0kpsiであり、従って加えられる力の総量は作られ
る相互接続の数に比例する。ボンディングは流体状の錫
と固体状の金との反応によって生じるので、金被覆テー
プと金のバンプとの金対金熱圧着ボンディングと比べて
非常に少ない力しか必要とされない。金対金のボンディ
ングの場合、固体状のボンディングを得るためには相当
な大きさの圧力及び300ないし500°Cの範囲の高
温が必要とされる。
パッケージング・アプリケーションのために現在用いら
れる最も効率的なチップ相互接続法である。このボンデ
ィング法は高性能チップをセラミックまたは有機基板に
直接接続するためにはんだバンプを利用する。鉛−錫合
金のはんだバンプは各チップ上でマスクを介してウエハ
ー上に2次元アレイ状に付着される。はんだバンプを有
するダイスされたチップがひっくり返され(フリップさ
れ)基板上のボンディング・パッドに大略整合される。
はんだ接合は、チップまたは基板のアセンブリをはんだ
バンプの融点以上の温度に保たれたリフロー炉に入れる
ことによって形成される。
板の両方に薄膜界面層を有するはんだバンプの断面を示
す図である。チップ21の側には代表的なものとしてC
r24/Cu25/Au26の薄膜層がはんだバンプ付
着に先立って付着され、また代表的なものとしてNi2
9/AU28層がセラミック基板30の側のボンディン
グ・パッドに付着される。これらの界面層は下側の材料
への接着及び良好なはんだ付け可能表面を与える。はん
だバンプはリフロー中液状であるので両界面において迅
速な反応が生じることができる。つまり、Au層の溶
解、及びAu−Sn,Cu−Sn,Ni−Sn、等の金
属間化合物及びその他の3元化合物の生成である。
はんだバンプは電気的相互接続として役立つだけでなく
チップ及び基板の間の機械的、物理的相互接続としても
役立つものである。電子的システムが動作するとき、チ
ップ温度が上下して熱的サイクルを繰り返す。はんだバ
ンプは異なる熱膨張係数の2つの物質系を接続するの
で、チップと基板材料との間の熱膨張の差がはんだ相互
接続に熱応力を誘起する。この種の熱的応力が繰り返し
加えられるとはんだ接合の疲労に至り、最終的にはシス
テムの電気的障害を生じる。熱的疲労の寿命は、殆どの
機械材料における低サイクルの疲労挙動と同じく、はん
だ接合に誘起される熱的応力の大きさによって強く影響
されることが知られている。熱的応力及びはんだ接合の
障害の危険を低減または抑制するため、幾つかの手段が
講じられている。つまり、チップの熱膨張係数により良
くマッチする新たな基板材料を選ぶこと、能動装置とそ
の環境との間の温度差を低減するための熱管理を改善す
ること、より順応性がある背の高いはんだ接合を作るこ
と、はんだ接合の周りに封止材料を適用すること等であ
る。
つ順応性があるTABパッケージチップとの相互接続が
可能とされる。更に、本発明は接合部において過剰な界
面間の反応を生じない安定なTAB接合構造を与えるこ
とを可能にする。更に本発明によれば、疲労寿命の長い
TAB構造を得ることができる。
力でのボンディングを可能にし、ひいては回路に対する
どのような障害をも低減することができる接合材料及び
方法を提供する。本発明の幾つかの側面によれば従来方
法でパッケージされたものより大きなチップ寸法のもの
をTABパッケージについて扱うことができる接合材料
及び方法を提供することができる。
るフリップ・チップ・パッケージとの相互接続が可能と
される。更に、本発明は接合部において過剰な界面間の
反応を生じない安定なフリップ・チップ接合構造を与え
ることを可能にする。更に本発明によれば、疲労寿命の
長いフリップ・チップ構造を得ることができる。本発明
の幾つかの側面によれば従来方法でパッケージされたも
のより大きなチップ寸法のものをフリップ・チップパッ
ケージについて扱うことができる接合材料及び方法を提
供することができる。
るアクティブ・マトリックス液晶ディスプレイ(AML
CD)パッケージとの相互接続が可能とされる。更に、
本発明は接合部において過剰な界面間の反応を生じない
安定なAMLCDの接合構造を与えることを可能にす
る。更に本発明によれば、疲労寿命が長くよりよい電気
的性能を与えるAMLCDパッケージが実現される。本
発明の幾つかの側面によれば従来方法でパッケージされ
たものより大きなチップ寸法のものをAMLCDパッケ
ージにおいて扱うことができる接合材料及び方法を提供
することができる。
本発明の一面は複数の導電性粒子から作られる導電性材
料を用いてテープ自動化ボンディング(TAB)、フリ
ップ・チップ・パッケージ、及びアクティブ・マトリッ
クス液晶ディスプレイ・パネルの相互接続を行う方式に
ある。各導電性粒子は導電性被覆を有し、これは溶融さ
れた時隣接粒子の上を覆う導電性被覆となって溶融した
導電性粒子の網を形成する。
ポリマ材料を有する粒子のペーストを形成しこのペース
トが接着性かつ電気的な接合を与えるようにしてチップ
上の導電性バンプと接触パッドとの間に導電性接合を形
成する方法にある。熱及び圧力が導電性粒子を溶融し互
いに融着して粒子を接触パッドに冶金的に接着させる。
ポリマ材料を有する粒子のペーストを形成しこのペース
トが接着性かつ電気的な接合を与えるようにしてAML
CDのガラス・パネルTABリードとの間に導電性接合
を形成する方法にある。熱及び圧力が導電性粒子を溶融
し互いに融着して粒子を接触パッドに冶金的に接着させ
る。
の当業者にとって以下の詳細な説明から直ちに明らかと
なるであろう。以下の詳細な説明において、本発明を実
施するための最良の態様を示すことにより本発明の好適
な実施例が示されかつ記述される。本発明がその他の異
なる実施例により実施され得ること、及びその細部が本
発明の精神から逸脱する事無く種々の自明な観点から変
更されうることは勿論であることが理解されよう。従っ
て、以下の記述はその性質上例示的なものであり、限定
的なものとして理解されるべきではない。
図を参照して説明する。
の例が図3に示されており、そこでTABリード37の
IC32上の金バンプ33への接合が導電性接着剤36
を用いて行われる。適当な導電性ペースト接着剤36の
例は本出願人の出願に関わる米国特許出願番号08/641,4
06、08/883,188、60/052,172、08/868,772、及び08/87
7,991に開示されている。
ラスティック及び熱硬化ポリマの両方またはどちらかを
含み、選択的にその他の成分を含むマトリックス中に分
散された導電性充填材粒子から成る。導電性接着剤は、
熱可塑性プラスティックまたは熱硬化ポリマ樹脂のマト
リックスと、清浄不要型(はんだ付け後の清浄が不要)
はんだフラックスと、導電性の可融性被覆を有する複数
の導電性粒子であって、その少なくとも幾分かは溶融し
て導電性の可融性被覆を通して別の導電性粒子に融着す
るものと、を含む事が好ましい。
径であることが好ましい。導電性の可融性被覆層は約
0.1ないし2ミクロンの厚さであることが好ましい。
例は、ポリイミド、シロキサン、ポリイミド−シロキサ
ン、フェノキシ・ポリマ、スチレン・アリール・アルコ
ール・ポリマ、エポキシ及びリグニン、セルローズ、木
材油、植物油、またはそれらの混合物から誘導されるバ
イオロジーに基づくポリマ樹脂を含む。
Pd、Pt、それらの混合物、および合金を含む。
n,In,Pb,Bi,Sbまたはそれらの組み合わせ
を含む。
06にはSnでめっきされたCuの粉末がポリマ樹脂マト
リックスに分散されたものが開示されている。米国特許
出願番号08/868,771にはInでめっきされたCuデンド
ライトの粉末が樹脂マトリックスに分散されたものが開
示されている。米国特許出願番号60/052,1726にはBi
/Sn合金でめっきされたCuの粉末がポリマ樹脂マト
リックスに分散されたものが開示されている。米国特許
出願番号60/052,172にはIn/Sn(またはBi/S
n)でめっきされたCuデンドライトの粉末がポリマ樹
脂マトリックスに分散されたものが開示されている。
ード37の先端領域に注入器で点滴することができる。
TABリード37は裸の銅、または表面にSnメッキ、
Auメッキ、或いはAu/Niメッキされたものであ
る。導電性ビーム・リード37はポリイミド、ポリエス
テル等の絶縁性ポリマ層によって支持することができ
る。
Snで被覆された充填材と共に用いると、AuからSn
への従来の共融ボンディングよりも低い温度でさえもT
ABプロセスを可能にする。更に、Snめっきされたテ
ープを導電性ペースト材料と共に用いると、Auのバン
プ表面における界面反応がAuからSnへの共融ボンデ
ィングに比べて少ししか広がらない。この結果得られる
接合構造はAuからSnへの従来の共融ボンディングよ
りも優れた機械的及び熱的疲労特性を持つものと期待さ
れる。TABテープのAuメッキされたCuリードにつ
いては、導電性接着材料を用いることによりAu対Au
の熱圧着ボンディング・プロセスがAu対Sn、Au対
In,またはAu対Bi/Snの冶金ボンディングに変
わり、これは一層低い温度で行うことができる。TAB
構造に導電性接着材料を用いる別の利点は、低いボンデ
ィング圧力を用いることができるため、熱圧着または共
融ボンディングよりも金バンプのひずみが少ない事によ
って実現される。
はフリップ・チップはんだバンプ47が導電性接着剤5
0を用いてモジュール基板52に取り付けられている。
導電性接着剤50は図3に関して述べた接着剤36と同
じものである。本発明に従う導電性ペースト材料の少量
が注入器またはスクリーン印刷によりモジュール52の
端子パッド51に点滴される。モリブデンまたは銅で金
属化された端子パッド52の頂部にはニッケル49及び
金48の表面冶金層が付着されている。アルミニウムま
たは銅で金属化された導電パッド42の頂部に付着され
たクロム、チタニウム、またはチタニウム・タングステ
ン44と、銅45と、金46とを含む薄膜層頂部にPb
−Snはんだバンプ47を付着することによりICチッ
プ41が準備される。はんだバンプ47はボンディング
の台としての役割を持つが、接合の間溶融することはな
い。Au,Cu,Ni,Co,Ag,Pd,Pt,P
b,Sn,In,Bi、Sb、Zn、或いはそれらの合
金または組合せなどのその他のバンプ材料も使用でき
る。
ル基板上の金属化物48/49と冶金接合を形成する。
本発明に従う 導電性接着材料を用いることにより、約
150ないし250°Cの温度範囲のような低温接合プ
ロセスが可能となるが、これに対して従来技術のフリッ
プ・チップ・ボンディングでは約350°Cとなる。
グは、はんだバンプの完全な溶融を必要とするので、接
合界面及びはんだバンプ内に種々の金属間化合物が広範
囲にわたって形成され、これが屡々接合の信頼性に重大
な懸念を生じる。本発明においては、導電性接着材料及
び接合材料の局所化された反応に付随する低温接合のた
め、金属間化合物の形成は一層少なくなるものと期待さ
れ、これはより優れた接合の一体性および接合信頼度の
強化をもたらすことになる。
こでは導電性接着剤60を用いてアクティブ・マトリッ
クス液晶ディスプレイ(AMLCD)が印刷回路板62
に接続される。ここに示されるAMLCDは3つの要
素、つまり、2枚のガラス板54、照明源56、及び電
子装置を内蔵する印刷回路板62より成る。薄い液晶層
55が2枚のガラス板の間に挟まれ、その上側のガラス
板にはカラー・フィルタ層が形成され、下側のガラス板
には透過光を変調するための薄膜トランジスタのアレイ
が作られている。ガラス板54と印刷回路板62との間
の接続は可撓性TABテープ59を用いて行われ、この
テープにはドライブ・チップ57が金バンプによって取
り付けられている。
相互接続は異方性導電フィルム(ACF)を用いてなさ
れるのが一般的である。この異方性導電フィルムは直径
数ミクロンの導電性充填粒子を絶縁性ポリマ樹脂に分散
したものから成る。充填粒子は固体の金属粉(銅、ニッ
ケル、金、銀、パラディウム、はんだ等)または金/ニ
ッケルで被覆されたプラスティック・ボールである。A
CFはTABリードとガラス板上の電極との間の導電性
接着ボンディングを与える。
加えることによって行われるが、接合部に何らの冶金的
ボンディングをも生じない。接着接合を通る電気伝導は
銅導電部材の加圧接触により与えられるので接合部の電
気的特性は、樹脂マトリックスに応力の緩和を生じる熱
に露呈されることに対して非常に敏感である。
代わりに導電性接着剤60が用いられる。この導電性接
着剤60は図3に関して述べた接着剤36と同じもので
ある。低温ボンディングを達成するためにはBi/Sn
またはIn/Snで被覆された充填材を含む導電性接着
剤が好ましい。熱及び圧力を加えると、導電性充填材の
間及び粒子と基板との間に冶金接合が作られる。この冶
金接合に加えてポリマ樹脂マトリックスによる接着接合
はガラス板と印刷回路板との間に機械的に強くかつ電気
的に安定な接合を与えることになる。本発明のこの概念
は従来技術のニッケル及び金で被覆されたプラスティッ
ク・ボールを、Sn,In,Bi,Sbまたはそれらの
合金より成る可融性層で更に被覆することによってその
働きを強化するためにも適用されうる。これはプラステ
ィック・ボールの圧縮可能な性質を利用した上、追加の
可融性被覆により可能とされる冶金的ボンディングによ
ってその性能を高めることになる。
06には、錫で被覆された銅の粉末、ポリイミド−シロキ
サン、溶剤、カルボン酸界面活性剤、及び清浄不要型フ
ラックスから成る導電性ペーストが開示されている。こ
の組成で接合処理はSnの融点230°Cに近い温度で
行われ、その時Sn対SnまたはSn対Auの冶金接合
が粒子対粒子及び粒子対基板パッド界面に形成される。
冶金接合であるため、銀を充填したエポキシ材料と比べ
て高い導電性および大きな接合強度が見られる。この冶
金接合は熱に曝されたときおよび熱サイクルを受けたと
きに接合に安定な電気的導電性を与えた。別の米国特許
出願番号60/052,173には、ビスマスー錫で被覆された銅
粉末、熱可塑性ポリマ樹脂、溶剤、及び清浄不要型フラ
ックスから作られた導電性ペーストが開示されている。
接合処理は約139°CであるBi−Snの共融温度近
くで行われる。別の米国特許出願番号08/868,771には、
インディウム錫で被覆された銅粉末、熱可塑性ポリマ樹
脂、溶剤、及び清浄不要型フラックスから作られた導電
性ペーストが開示されている。接合処理は約120°C
であるIn−Snの共融温度近くで行われる。Bi−S
nまたはIn−Snで被覆された銅粉末を含む導電性ペ
ーストはポリマの印刷回路板について使用できる。また
Snで被覆された銅粉末はセラミック基板について使用
できる。
明された。この明細書の開示は本発明の好適な実施例だ
けを示し、記述したものであるが、上に述べたように、
本発明がその他の種々な組合せ、変更及び環境で使用さ
れうること、及び本明細書で表明された本発明の概念の
中で上述の教示及びこの分野の技能及び知識に従って変
更または修正を成し得ることは言うまでもない。更に、
上で述べられた実施例は本発明を実施するための知る限
りの最良の態様を説明し、当業者が上記実施例またはそ
の他の実施例において本発明の特定の応用または用途に
必要とされる種々の変更を加えて本発明を利用できるよ
うにする事を意図するものである。従って、上記記述は
本発明をここに開示した形態に限定することを意図する
ものではない。また、本明細書の特許請求の範囲が代替
の実施例を包括するように解釈されることが意図される
ものである。
いて集積回路装置に相互接続する従来技術のテープ自動
化ボンディング(TAB)を表す概略断面図である。熱
バンプ付き構造によりTABビーム・リードを集積回路
装置にボンディングするのに圧着ボンディングが一般的
に用いられる。
バンプを用いてセラミック・モジュールにフリップ・チ
ップ相互接続する代表的な従来技術を表す概略断面図で
ある。
あり、この構造において本発明に従って開発された新規
な導電性ペーストが、より低い印加圧力で熱圧着ボンデ
ィングを促進し、接合部における界面の反応を抑制し、
これによりTAB相互接続構造の信頼性を強化するため
に用いられる。
略断面図であり、本発明に従って開発された新規な導電
性ペーストが接合温度を下げるボンディング材料として
用いられ、接合部における界面の反応を抑制し、これに
よりフリップ・チップ相互接続構造の信頼性を強化する
ために用いられる。
(AMLCD)相互接続構造を表す図であり、ここで本
発明に従って開発された新規な導電性接着材料がガラス
・パネル・ディスプレイと印刷回路ボードとの間のボン
ディング材料として用いられる。
Claims (46)
- 【請求項1】TABパッケージの電子的チップのキャリ
ア上にアレイ状に配列された複数の導電性ビーム・リー
ドを含み、前記ビーム・リードが導電性接着剤でボンデ
ィング用の台またはバンプに電気的かつ機械的に接合さ
れている構造物。 - 【請求項2】前記導電性ビーム・リードは、銅から作ら
れるか、或いは、Snでメッキされた表面、Auでメッ
キされた表面、またはAu/Niでメッキされた表面を
有し、前記導電性ビーム・リードはポリイミドまたはポ
リエステルの絶縁性ポリマによって支持される請求項1
の構造物。 - 【請求項3】前記導電性接着剤は、 熱可塑性または熱硬化性ポリマ樹脂マトリックスと、 清浄不要型はんだフラックスと、 導電性の可融性被覆を有する複数の導電性粒子であっ
て、その少なくともいくらかの粒子は溶融された時導電
性の可融性被覆を通して他の粒子に融着するようになっ
ている導電性粒子と、 を含む請求項1の構造物。 - 【請求項4】前記導電性粒子はCu,Au,Ag,A
l,PdおよびPtから選ばれる少なくとも1つの材料
から作られる請求項3の構造物。 - 【請求項5】前記可融性被覆はSn,Zn,In,P
b,Bi,およびSbから選ばれる請求項3の構造物。 - 【請求項6】前記ポリマ樹脂マトリックスの材料は、ポ
リイミド、シロキサン、ポリイミド−シロキサン、フェ
ノキシ・ポリマ、スチレン・アリール・アルコール・ポ
リマ、エポキシ、またはリグニン、セルローズ、木材
油、及び植物油の少なくとも1つのものから誘導される
バイオロジに基づくポリマ樹脂から選ばれる請求項3の
構造物。 - 【請求項7】前記ポリマ樹脂マトリックスの材料は前記
ボンディング用の台またはバンプの接着接合を与える請
求項3の構造物。 - 【請求項8】前記導電性粒子は1ないし50ミクロンの
直径である請求項3の構造物。 - 【請求項9】前記可融性被覆は0.1ないし2ミクロン
の厚さである請求項3の構造物。 - 【請求項10】前記構造物は電子的装置である請求項1
の構造物。 - 【請求項11】前記構造物は計算装置である請求項1の
構造物。 - 【請求項12】前記構造物はTABパッケージの電子的
チップのキャリアである請求項1の構造物。 - 【請求項13】前記導電性接着剤による前記ビーム・リ
ードの接合はある時間の間熱及び圧力を加えることによ
ってなされる請求項1の構造物。 - 【請求項14】前記ビーム・リードの先端領域への前記
導電性接着剤の付着は注入器を用いて行われる請求項1
の構造物。 - 【請求項15】前記ボンディング用の台または集積回路
装置のバンプへの前記導電性接着剤の付着は注入器、ス
クリーン・プリント、またはステンシル・プリントを用
いて行われる請求項1の構造物。 - 【請求項16】集積回路装置上でアレイ状に配置された
フリップ・チップ相互接続のための複数の導電性バンプ
を含み、 前記バンプは電子的チップのキャリア・モジュール状の
端子パッドに導電性接着剤で電気的かつ機械的に接合さ
れ、 前記導電性接着剤が前記チップのキャリア・モジュール
の前記端子パッドまたは前記集積回路装置の前記導電性
バンプに付着されている、 構造物。 - 【請求項17】前記導電性バンプは、Au,Cu,N
i,Co,Ag,Pd,Pt,Pb,Sn,In,B
i、Sb、Snまたはそれらの合金から選ばれる材料か
ら作られる請求項16の構造物。 - 【請求項18】前記導電性バンプは、Cr/Cu/A
u、Ti/Cu/AuまたはTiW/Cu/Auから成
る薄膜層の上に付着され、前記薄膜層は集積回路装置の
アルミまたは銅金属化層の上に付着される請求項16の
構造物。 - 【請求項19】前記導電性接着剤は、 熱可塑性または熱硬化性ポリマ樹脂マトリックスと、 清浄不要型はんだフラックスと、 導電性の可融性被覆を有する複数の導電性粒子であっ
て、その少なくともいくらかの粒子は溶融された時導電
性の可融性被覆を通して他の粒子に融着するようになっ
ている導電性粒子と、 を含む請求項16の構造物。 - 【請求項20】前記導電性粒子はCu,Au,Ag,A
l,PdおよびPtから選ばれる少なくとも1つの材料
から作られる請求項19の構造物。 - 【請求項21】前記可融性被覆はSn,Zn,In,P
b,Bi,およびSbから選ばれる請求項19の構造
物。 - 【請求項22】前記ポリマ樹脂マトリックスの材料は、
ポリイミド、シロキサン、ポリイミド−シロキサン、フ
ェノキシ・ポリマ、スチレン・アリール・アルコール・
ポリマ、エポキシ、またはリグニン、セルローズ、木材
油及び植物油の少なくとも1つのものから誘導されるバ
イオロジに基づくポリマ樹脂から選ばれる請求項19の
構造物。 - 【請求項23】前記ポリマ樹脂マトリックスの材料は前
記導電性バンプの接着接合を与える請求項19の構造
物。 - 【請求項24】前記導電性粒子は1ないし50ミクロン
の直径である請求項19の構造物。 - 【請求項25】前記可融性被覆は0.1ないし2ミクロ
ンの厚さである請求項19の構造物。 - 【請求項26】前記構造物は電子的装置である請求項1
6の構造物。 - 【請求項27】前記構造物は計算装置である請求項16
の構造物。 - 【請求項28】前記構造物はフリップ・チップ・パッケ
ージの電子的チップのキャリアである請求項16構造
物。 - 【請求項29】前記導電性接着剤による前記キャリア・
モジュールへの前記導電性バンプの接合はある時間の間
熱及び圧力を加えることによってなされる請求項16の
構造物。 - 【請求項30】前記キャリア・モジュールの前記端子パ
ッドへの前記導電性接着剤の付着は注入器を用いてまた
はスクリーン印刷により行われる請求項16の構造物。 - 【請求項31】前記集積回路装置の前記導電性バンプの
頂部への前記導電性接着剤の付着は注入器を用いてまた
はスクリーン・プリントにより行われる請求項16の構
造物。 - 【請求項32】アクティブ・マトリックス液晶ディスプ
レイ(AMLCD)と印刷回路板とを電気的に相互接続
するために用いられるTABパッケージの電子的チップ
のキャリア上でアレイ状に配置された複数の導電性ビー
ム・リードを含み、 前記ビーム・リードはAMLCDのガラス板上の電極パ
ッドに導電性接着剤で電気的かつ機械的に接合され、 前記導電性接着剤が前記ガラス板の前記電極パッドまた
はTABパッケージの前記導電性ビーム・リードに付着
されている、 構造物。 - 【請求項33】前記導電性ビーム・リードは、銅から作
られるか、或いは、Snでメッキされた表面、Auでメ
ッキされた表面、またはAu/Niでメッキされた表面
を有し、前記導電性ビーム・リードはポリイミドまたは
ポリエステルの絶縁性ポリマによって支持される請求項
32の構造物。 - 【請求項34】前記導電性接着剤は、 熱可塑性または熱硬化性ポリマ樹脂マトリックスと、 清浄不要型はんだフラックスと、 導電性の可融性被覆を有する複数の導電性粒子であっ
て、その少なくともいくらかの粒子は溶融された時導電
性の可融性被覆を通して他の粒子に融着するようになっ
ている導電性粒子と、 を含む請求項32の構造物。 - 【請求項35】前記導電性粒子はCU,Au,Ag,A
l,Pd,Pt、或いはNI,Co,Cu,Au,A
G,Pt,Pd、またはそれらの組合せから選ばれたも
のにより被覆されたプラスティック・ボールから選ばれ
た少なくとも1つの材料から作られる請求項34の構造
物。 - 【請求項36】前記可融性被覆はSn,Zn,In,P
b,Bi,Sbまたはそれらの組合せから選ばれた材料
である請求項34の構造物。 - 【請求項37】前記ポリマ樹脂マトリックスの材料は、
ポリイミド、シロキサン、ポリイミド−シロキサン、フ
ェノキシ・ポリマ、スチレン・アリール・アルコール・
ポリマ、エポキシ、またはリグニン、セルローズ、木材
油及び植物油の少なくとも1つのものから誘導されるバ
イオロジに基づくポリマ樹脂から選ばれる請求項34の
構造物。 - 【請求項38】前記ポリマ樹脂マトリックスの材料はボ
ンディング用の台またはバンプの接着接合を与える請求
項34の構造物。 - 【請求項39】前記導電性粒子は1ないし50ミクロン
の直径である請求項34の構造物。 - 【請求項40】前記可融性被覆は0.1ないし2ミクロ
ンの厚さである請求項34の構造物。 - 【請求項41】前記構造物は電子的装置である請求項3
2の構造物。 - 【請求項42】前記構造物は計算装置である請求項32
の構造物。 - 【請求項43】前記構造物はアクティブ・マトリックス
液晶ディスプレイ(AMLCD)の電子的パッケージン
グに用いられるTABパッケージの電子的チップのキャ
リアである請求項32の構造物。 - 【請求項44】前記導電性接着剤による前記ビーム・リ
ードの接合はある時間の間熱及び圧力を加えることによ
ってなされる請求項32の構造物。 - 【請求項45】前記ビーム・リードの先端領域への前記
導電性接着剤の付着は注入器を用いて行われる請求項3
2の構造物。 - 【請求項46】前記ガラス板上の電極パッドへの前記導
電性接着剤の付着は注入器、スクリーン・プリント、ま
たはステンシル・プリントを用いて行われる請求項32
の構造物。
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US5217397P | 1997-07-10 | 1997-07-10 | |
US60/052173 | 1998-06-30 | ||
US09/106780 | 1998-06-30 | ||
US09/106,780 US6337522B1 (en) | 1997-07-10 | 1998-06-30 | Structure employing electrically conductive adhesives |
Publications (2)
Publication Number | Publication Date |
---|---|
JPH1197480A true JPH1197480A (ja) | 1999-04-09 |
JP3329276B2 JP3329276B2 (ja) | 2002-09-30 |
Family
ID=26730283
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP19529698A Expired - Lifetime JP3329276B2 (ja) | 1997-07-10 | 1998-07-10 | 導電性接着剤による相互接続構造物 |
Country Status (2)
Country | Link |
---|---|
US (2) | US6337522B1 (ja) |
JP (1) | JP3329276B2 (ja) |
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Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2002280417A (ja) * | 2001-01-15 | 2002-09-27 | Nec Corp | 半導体装置及びその製造方法並びに半導体製造装置 |
JP4656275B2 (ja) * | 2001-01-15 | 2011-03-23 | 日本電気株式会社 | 半導体装置の製造方法 |
JP2003092308A (ja) * | 2001-09-19 | 2003-03-28 | Sony Corp | 半導体装置およびその製造方法 |
JP2007095810A (ja) * | 2005-09-27 | 2007-04-12 | Tokai Rika Co Ltd | コネクタ一体型デバイス |
JP2018505060A (ja) * | 2015-02-11 | 2018-02-22 | アルファ・アセンブリー・ソリューションズ・インコーポレイテッドAlpha Assembly Solutions Inc. | 電気接続テープ |
Also Published As
Publication number | Publication date |
---|---|
US6646355B2 (en) | 2003-11-11 |
JP3329276B2 (ja) | 2002-09-30 |
US20020056925A1 (en) | 2002-05-16 |
US6337522B1 (en) | 2002-01-08 |
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