TW200724272A - Method for bonding between electrical devices using ultrasonic vibration - Google Patents
Method for bonding between electrical devices using ultrasonic vibrationInfo
- Publication number
- TW200724272A TW200724272A TW095143148A TW95143148A TW200724272A TW 200724272 A TW200724272 A TW 200724272A TW 095143148 A TW095143148 A TW 095143148A TW 95143148 A TW95143148 A TW 95143148A TW 200724272 A TW200724272 A TW 200724272A
- Authority
- TW
- Taiwan
- Prior art keywords
- bonding
- electrical devices
- ultrasonic vibration
- electrical device
- adhesives
- Prior art date
Links
- 239000000853 adhesive Substances 0.000 abstract 2
- 230000001070 adhesive effect Effects 0.000 abstract 2
Classifications
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Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Wire Bonding (AREA)
- Pressure Welding/Diffusion-Bonding (AREA)
- Electric Connection Of Electric Components To Printed Circuits (AREA)
Abstract
The present invention is to provide a method for bonding between electrical devices, including the steps of: aligning electrodes on a bonded area of an upper electrical device and a lower electrical device to be bonded; and curing of adhesives by applying ultrasonic energy to the adhesives between the upper electrical device and the lower electrical device.
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020050113105A KR100746330B1 (en) | 2005-11-24 | 2005-11-24 | Method for bonding between electrical devices using ultrasonication |
Publications (2)
Publication Number | Publication Date |
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TW200724272A true TW200724272A (en) | 2007-07-01 |
TWI306423B TWI306423B (en) | 2009-02-21 |
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ID=38067402
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TW095143148A TWI306423B (en) | 2005-11-24 | 2006-11-22 | Method for bonding between electrical devices using ultrasonic vibration |
Country Status (6)
Country | Link |
---|---|
JP (1) | JP2009517861A (en) |
KR (1) | KR100746330B1 (en) |
CN (1) | CN101322233B (en) |
DE (1) | DE112006003181T5 (en) |
TW (1) | TWI306423B (en) |
WO (1) | WO2007061216A1 (en) |
Cited By (2)
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TWI492342B (en) * | 2011-10-12 | 2015-07-11 | Novatek Microelectronics Corp | Ic chip package and chip-on-glass structure using the same |
US9236360B2 (en) | 2011-10-12 | 2016-01-12 | Novatek Microelectronics Corp. | IC chip package and chip-on-glass structure using the same |
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JP4364928B2 (en) * | 2007-04-13 | 2009-11-18 | 積水化学工業株式会社 | Conductive fine particles, anisotropic conductive material, and conductive connection structure |
KR100844430B1 (en) * | 2007-08-24 | 2008-07-08 | (주)에이앤아이 | Method for bonding between electrical devices |
DE102008050000A1 (en) * | 2008-09-30 | 2010-04-01 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Method for the simultaneous mechanical and electrical connection of two parts |
KR20100053016A (en) * | 2008-11-12 | 2010-05-20 | 한국과학기술원 | (method for bonding between electrical devices by adjusting the heating temperature of adhesive and apparatus for bonding between electrical devices by adjusting the heating temperature of adhesive |
KR101046590B1 (en) | 2009-02-16 | 2011-07-05 | 한국과학기술원 | Electronic component joining method using vibration energy and vibration energy application device |
KR101051045B1 (en) * | 2009-06-02 | 2011-07-21 | 중앙대학교 산학협력단 | Terminal connection method using conductive adhesive |
KR101025620B1 (en) * | 2009-07-13 | 2011-03-30 | 한국과학기술원 | Anisotropic Conductive Adhesives for UltraSonic Bonding and Electrical Interconnection Method of Electronic Components Using Thereof |
US8129220B2 (en) | 2009-08-24 | 2012-03-06 | Hong Kong Polytechnic University | Method and system for bonding electrical devices using an electrically conductive adhesive |
KR101582943B1 (en) * | 2009-10-15 | 2016-01-08 | 삼성디스플레이 주식회사 | Manufacturing method of flat panel display |
DE102010039339A1 (en) | 2010-08-16 | 2012-08-09 | Steffen Möglich | Adhesive system, useful for a workpiece, comprises microcapsules in which a coupling agent or a component of a coupling agent is encapsulated |
CN102157406A (en) * | 2011-01-20 | 2011-08-17 | 中南大学 | Method for bonding chip with resin substrate through ultrasonic vibration |
KR101908501B1 (en) * | 2011-12-07 | 2018-10-17 | 엘지디스플레이 주식회사 | Integrated Touch Screen With Organic Emitting Display Device and Method for Manufacturing the Same |
DE102013009234B4 (en) | 2012-06-01 | 2019-10-02 | Technische Universität Dresden | Process for the preparation of electrically conductive compounds between joining partners as well as a use of a polymer or polymer mixture |
KR101348127B1 (en) | 2012-06-18 | 2014-01-07 | 손재설 | Maunfacturing method for circuit pattern on heat sink |
JP2014053597A (en) * | 2012-08-09 | 2014-03-20 | Hitachi Chemical Co Ltd | Chip type electronic component and connection structure |
US9603580B2 (en) | 2013-05-24 | 2017-03-28 | Fujifilm Sonosite, Inc. | High frequency ultrasound probe |
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CN104051281B (en) * | 2014-06-13 | 2016-08-31 | 武汉理工大学 | Filling device and method under ultrasonic activation auxiliary flip-chip plastic packaging molding |
CN104157617B (en) * | 2014-07-29 | 2017-11-17 | 华为技术有限公司 | Integrated chip module, chip-packaging structure and integrated chip method |
CN109803812A (en) * | 2016-10-07 | 2019-05-24 | 多种材料焊接股份公司 | The method for activating adhesive |
KR101740006B1 (en) * | 2016-11-23 | 2017-06-09 | 지스마트 주식회사 | Flexible circuit board for transparent display board improved durability and the assembling method thereof |
KR101932337B1 (en) | 2017-04-12 | 2018-12-26 | 한국과학기술원 | Anisotropic conductive film including polymer layer for suppressing movement of conductive particles and manufacturing method thereof using vertical ultrasonic wave |
WO2018207547A1 (en) * | 2017-05-12 | 2018-11-15 | コニカミノルタ株式会社 | Light-emitting device |
GB2584106B (en) * | 2019-05-21 | 2024-03-27 | Pragmatic Printing Ltd | Flexible electronic structure |
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JP7406955B2 (en) * | 2019-10-29 | 2023-12-28 | セイコーインスツル株式会社 | 2-layer single-sided flexible board and method for manufacturing a 2-layer single-sided flexible board |
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CN112867288B (en) | 2021-01-05 | 2021-08-17 | 江苏特丽亮镀膜科技有限公司 | ACF conductive adhesive film structure, hot pressing method thereof and hot pressing assembly |
KR102520768B1 (en) * | 2021-04-21 | 2023-04-12 | 주식회사 경신전선 | Method for ultrasonic bonding for circuit device using anisotropic conductive film |
Family Cites Families (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH07137042A (en) * | 1993-11-17 | 1995-05-30 | San Giken Kk | Curing method of curing resin |
JPH10199935A (en) * | 1997-01-06 | 1998-07-31 | Matsushita Electric Ind Co Ltd | Method of mounting works |
TW396471B (en) * | 1997-06-04 | 2000-07-01 | Ibm | Electrodeposition of low temperature, high conductivity, powder materials for electrically conductive paste formulations |
JP4097379B2 (en) * | 1999-01-29 | 2008-06-11 | 松下電器産業株式会社 | Electronic component mounting method and apparatus |
JP3339450B2 (en) * | 1999-03-02 | 2002-10-28 | 株式会社村田製作所 | Method for manufacturing surface acoustic wave device |
JP3351402B2 (en) * | 1999-04-28 | 2002-11-25 | 株式会社村田製作所 | Electronic element, surface acoustic wave element, mounting method thereof, electronic component or surface acoustic wave device manufacturing method, and surface acoustic wave device |
KR100367407B1 (en) * | 2000-03-31 | 2003-01-14 | 학교법인 한양학원 | low contact resistance chip bonding method |
JP2002222405A (en) * | 2001-01-26 | 2002-08-09 | Toppan Forms Co Ltd | Tag for baggage and its manufacturing method |
JP4526195B2 (en) * | 2001-01-26 | 2010-08-18 | トッパン・フォームズ株式会社 | Baggage tag and its manufacturing method |
JP2002288612A (en) * | 2001-03-27 | 2002-10-04 | Toppan Forms Co Ltd | Manufacturing method for tag for loading |
JPWO2003012863A1 (en) * | 2001-07-31 | 2004-12-09 | 株式会社ルネサステクノロジ | Semiconductor device and manufacturing method thereof |
JP4059497B2 (en) * | 2003-06-24 | 2008-03-12 | 日東電工株式会社 | Die bonding adhesive film, dicing die bonding adhesive film, and semiconductor device |
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2005
- 2005-11-24 KR KR1020050113105A patent/KR100746330B1/en active IP Right Grant
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2006
- 2006-11-22 DE DE112006003181T patent/DE112006003181T5/en not_active Ceased
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- 2006-11-22 TW TW095143148A patent/TWI306423B/en active
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TWI492342B (en) * | 2011-10-12 | 2015-07-11 | Novatek Microelectronics Corp | Ic chip package and chip-on-glass structure using the same |
US9236360B2 (en) | 2011-10-12 | 2016-01-12 | Novatek Microelectronics Corp. | IC chip package and chip-on-glass structure using the same |
Also Published As
Publication number | Publication date |
---|---|
KR20070025889A (en) | 2007-03-08 |
WO2007061216A1 (en) | 2007-05-31 |
CN101322233B (en) | 2011-04-20 |
JP2009517861A (en) | 2009-04-30 |
KR100746330B1 (en) | 2007-08-03 |
DE112006003181T5 (en) | 2008-11-06 |
TWI306423B (en) | 2009-02-21 |
CN101322233A (en) | 2008-12-10 |
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