TWI300810B - Ozone post-deposition treatment to remove carbon in a flowable oxide film - Google Patents

Ozone post-deposition treatment to remove carbon in a flowable oxide film Download PDF

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TWI300810B
TWI300810B TW093112473A TW93112473A TWI300810B TW I300810 B TWI300810 B TW I300810B TW 093112473 A TW093112473 A TW 093112473A TW 93112473 A TW93112473 A TW 93112473A TW I300810 B TWI300810 B TW I300810B
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Taiwan
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insulating material
flowable
ozone
flowable insulating
exposing
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TW093112473A
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TW200502428A (en
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Gurtej S Sandhu
Li Li
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Micron Technology Inc
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    • H01L21/02337—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment treatment by exposure to a gas or vapour
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    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
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    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/40—Oxides
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    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
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    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
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Description

1300810 P知中之該殘餘碳沉積 ，直到該溝渠被填滿至該 且暴露於A之下，以移除在該第 物。可以重複進行該連續的方法 絕緣層1 〇所希冀的程度。 為了測定該經暴露於 下之絕緣層1 Ω ^ ^ 數量，可以刹田TMQ Α Γ 中所出現的石反 r以利用TMS的CVD以及〇3於5 絕緣層1 η私 $ 4 r a 0 C的溫度下將 象盾1 〇於一再生區晶圓（blan 該絕緣層1〇在大約6 0 0 A的厚度下二進仃沉積。 沒有吴雨私η 進仃，儿積。相較於 又有暴路於〇3下之絕緣層1 〇 層1 n n女 U 兄暴露於〇3下之絕緣 1 〇大幅降低了碳的數量。如圖 ^ Λ, 1 T所顯不，JL择 …、…1如以上所敘述之絕緣層丄〇 ^ (STMQ、w 7弟—離子質譜測定法 、US)分析，相較於暴露至 f 3卜丄ϋ 〇秒的絕緣層1 〇 〈心員不於圖3中）而言，該沒有被昊 η目士 又虿破暴路至〇3下之絕緣層工 有較高之碳數量（顯示於圖2中）。經暴露至〇3Τ1 的絕緣層1 ◦顯示了碳的背景程度（baekgr〇und 將該絕緣層i 〇於5 3 〇t下被暴露至〇3下，以改變 一時間。圖4顯示了相較於經暴露至〇3下丄〇 〇秒、2 〇 0私、以及3 0 〇秒之絕緣層i 〇的碳深度數據圖表。如 同圖4中所顯示，暴露至〇3下丄〇 〇秒、2 〇 〇秒、以及 ^ 〇 0秒會大幅降低了存在於絕緣層丄〇中之碳數量。這 二絕緣層1 〇具有一些無法偵測數量的碳，如同圖4中所 示由米日（noise )及石反的月景數量（background amount )。 藉由SIMS分析所偵測的結果，相較於以〇3處理過後之絕 、、彖層1 0，該沒有暴露於〇3下之控制絕緣層顯示了 一顯著 13 1300810 液體的形式被供應，並且可以在該半導體基板2之溝槽8 之中進行沉積，以形成該絕緣層i 〇。可將該絕緣層丄〇 暴路表〇3下，如先前所敘述，以移除殘餘的碳沉積物。 在暴露於〇3下以移除殘餘的碳沉積物之後，該具有絕 緣層1 0 (實質上*含殘餘的碳）之半導體基板2可以更 進一步進行加工，如習知技術一般，以製造出所希冀的半 導體裝置結構。舉例而言，可以使用平面化製程來製造該 半導體裝置結構。當使用03來移除殘餘碳沉積物被敛述用/ 於溝槽絕緣應用中時，03亦可被用於其他的例子當中，這 ^例子當中殘餘碳的沉積物是從可流動氧化物材料、或者 是旋屬、可流動氧化物材料中所移除。舉例而言，當Μ t料被用來填充介於金屬線之間的溝渠時、或者是;該; ，動乳化物材料制於低介電常數（低的應用中時， 可以使用〇3來移除殘餘的碳沉積物。 、U♦明可谷許各種不同的修改及變化型式，但是 仍以圖式中的實施例方式顯示 一 敛述。然而，應該要了解到的/、：：樣並加以並詳盡 示之特定… 疋，本發明被不揭限於所揭 請專剎r円士 '之的纟务明在以下所附加之申 口月專利乾圍中所定義的精神 r 等同物、以及變化。㈠内包含了所有的修改、 【圖式簡單說明】 雖然本說明書以申請專利專 白要求本發明所請， 111作―’特別指出並明 本發明之更細部的解優點可以藉由以下對於 解”兒並且結合其伴隨的圖式可以更_ 15 1300810 易地了解，其中的圖式： 圖1 A — 1 C係為本發明之中間半導體裝置結構的橫 截面圖；以及 圖2、3、4、以及5 :係顯示未處理之絕緣層的碳 等級、以及以臭氧.處理過後之絕緣層的碳等級。 【元件符號說明】 2 . 半導體基板 4 . 活性區域 6 . 非活性區域 8 . 溝槽 10. 絕緣層 16

Claims (1)

  1. 嚷豐，)正替·] 十、申請專利範園： 1 · 一種移除殘餘碳沉積物的方法，其包括： 提供包括矽、碳及氫之可流動絕緣材料；並且 將碑可流動絕緣材料暴露於至少一種基本上由臭氧所 組成的氣體以從該可流動絕緣材料上移除殘餘碳沉積物。 2. 根據中請專利範圍第丨項之方法，其中提供可流動 絕緣材料的步驟包括了提供—種包括至少—個溝槽的半導 體基板並且在該至少—個溝槽中沉積該可流動絕緣材料。
    3. 根據中請專利範圍冑2項之方法，其中在該至少— 個溝槽中沉積該可流動絕緣材料的步驟包括了以該可流動 絕緣材料將該至少一個溝槽進行完全地填充。 4·根據中請專利範圍帛2項之方法，其中在該至少一 個溝槽中沉積該可流動絕緣材料的步驟包括了以該可流動 絕緣材料將該至少一個溝槽進行部份地填充。 5·根據中請專利範圍第i項之方法，其中提供可流動 絕緣材料的步驟包括了藉由化學氣相沉積來沉積該可流動
    絕緣材/料。 6.根據申請專利範圍第5項之方法，其中藉由化學氣 相:積來沉積該可流動絕緣材料的步驟包括了將—種有機 矽前驅物和一種氧化劑流經該半導體基板。 7 ·根據申請專利If 望c； xg > 士 , 弟5項之方法，其中該藉由化學 氣相丨儿積來7儿積該可0 p > » 'li'i rL· ^ J /爪動絶緣材料的步驟包括了將三甲基 石夕烧與臭氧流經該半導體基板。 8.根據申請專利蘇圍笛·| g 兮〜乾固弟1項之方法，其中該提供可流 17 1300810 動絕緣材料 料。 的步驟包括了提供一種旋壓、可流動氧化物材 ” 9·根據申請專利範圍帛1項之方法，其中將該可流動· :緣材料暴露於至少一種基本上由臭氧所組成的氣體的步· 驟包括將該可流動絕緣材料暴露於-種另外包括-種惰性 載體氣體的氣體。 ^ ι〇·根據申請專利範圍第1項之方法，其中將該可流動 絶緣材料暴露於至少一種基本上由臭氧所組成的氣體的步 私包括了在介於大約0艽和大約1 000。〇之間的溫度下，將 _ 該可流動絕緣材料暴露於臭氧之中。 Π.根據_請專利範圍第丨項之方法，其中將該可流動 絕緣材料暴露於至少一種基本上由臭氧所組成的氣體的步 驟包括了在大約400°c至大約700°C的溫度下，使臭氧流 經該可流動絕緣材料。 12 ·根據申請專利範圍第1項之方法，其中將該可流動 絕緣材料暴露於至少一種基本上由臭氧所組成的氣體的 步驟包括了以在每分鐘大約1 〇標準立方公分和每分鐘大 籲 約2 0，〇 〇 〇標準立方公分之間的速率，將該可流動絕緣材 料暴露於臭氧之中。 13 ·根據申清專利範圍第1項之方法，其中將該可流動 絕緣材料暴露於至少一種基本上由臭氧所組成的氣體的步 — 驟包栝了以每分鐘大約2, 000標準立方公分至每分鐘大約 5，〇 0 0標準立方公分的速率，將臭氧流經該可流動絕緣材 料。 18 1300810 14.根據申請專利範圍第丨項之方法，其中將該可流動 絕緣材料暴露於至少-種基本上由臭氧所組成的氣體的步 驟包括了在超過大肖1%的臭氧濃度下，將臭氧流經該可 流動絕緣材料。 15·根據中請專利範圍第！項之方法，其中將該可流動 絶緣材料暴露於至少一種基本上由臭氧所組成的氣體的步 驟包括了在超過大肖12%的臭氧濃度下，將臭氧流經該可 流動絕緣材料。 16·根據中請專利範圍第1項之方法，其中將該可流動 絕緣材料暴露於至少一種基本上由臭氧所組成的氣體的步 驟包括了在超過大約17¾ 曲+ Ί 的臭乳濃度下，將臭氧流經該可 流動絕緣材料。 17·根據申請專利範圍第1項之方法，其中將該可流 絕緣材料暴露於至少—種基本上由臭氧所組成的氣體的 驟包括了將該可流動絕緣材料暴露於臭氧之中，歷時一 足以將該殘餘碳沉積物氧化的時間。
    18·根據申請專利範圍第1項之方法，其中將該可流 絕緣材料暴露於至少_鍤I士 種基本上由臭氧所組成的氣體的 驟包括了將該可流動维续u Μ 助、巴緣材枓暴露於臭氧之中，歷時在 約20秒和大約300秒之間。 1 9 ·根據申請專利_ i轭圍苐1項之方法，其中將該可流: 絕緣材料暴露於至少__I 士 種基本上由臭氧所組成的氣體的： 驟包括了將該可流動絕缕奸 巴緣材科暴露於臭氧之中，歷時大丨 20秒。 19 1300810 20·根據申請專利範圍第丨項之方法，其中將該可流動 絕緣材料暴露於至少一種基本上由臭氧所組成的氣體的步 驟包括了將該殘餘碳沉積物氧化成具有揮發性的碳種類。 - 21·根據申請專利範圍第丨項之方法，其中將該可 、 絕緣材料暴露於至少一種美太上由# ^ " v檀基本上由臭虱所組成的氣體的步 驟包括了將存在於該絕緣材料之中的碳的量降低至少 約5原子％ 。 ^ 一種牛導體裝置結構，其包括：
    二半導體基板，其包括至少一個溝槽，該溝槽係 -種由石夕和虱所組成的或由石夕、氫以及氧和氮中至少— 所組成的絕緣材料來進行至少 枓筏1古士从， 刀也具充，其中該絕緣 枓係具有少於大約5%的殘餘碳。 23·根據申請專利範 中令够缝奴把一 2員之+導體裝置結構， 中H緣材枓貫質上不含殘餘的碳。 24·根據申請專利範圍第22 中該半導體I置結構传為插由 體裝置結構， 、口傅1系马一種中間丰霉 絕緣材料是處於可流動的狀態。、-、置結構’而: 25·根據申請專利範圍第22項之半導 中該半導體裝置纟士槿孫&级 千V體裳置結構，： 該絕緣材料被固化。 · ^體裝置結構，！ 十一、圓式： 如次頁 20 1300810 七、 指定代表圖： (一） 本案指定代表圖為：第（1A )圖。 (二) 本代表圖之元件符號簡單說明： 2 . 半導體基板 4 . 活性區域 6 . 非活性區域 八、 本案若有化學式時，請揭示最能顯示發明特徵的化學式:
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WO2004102651A1 (en) 2004-11-25
JP2007516603A (ja) 2007-06-21
CN101176190A (zh) 2008-05-07
EP1623455A1 (en) 2006-02-08
CN101176190B (zh) 2012-10-24
US20050282328A1 (en) 2005-12-22
TW200502428A (en) 2005-01-16
KR100788183B1 (ko) 2007-12-26
KR20060014393A (ko) 2006-02-15
US20040224510A1 (en) 2004-11-11

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