TWI290761B - Semiconductor device and a method of manufacturing the same - Google Patents

Semiconductor device and a method of manufacturing the same Download PDF

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Publication number
TWI290761B
TWI290761B TW092104922A TW92104922A TWI290761B TW I290761 B TWI290761 B TW I290761B TW 092104922 A TW092104922 A TW 092104922A TW 92104922 A TW92104922 A TW 92104922A TW I290761 B TWI290761 B TW I290761B
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Taiwan
Prior art keywords
film
metal
semiconductor device
ball portion
metal film
Prior art date
Application number
TW092104922A
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English (en)
Other versions
TW200305266A (en
Inventor
Yasuyuki Nakajima
Toshiaki Morita
Tomoo Matsuzawa
Seiichi Tomoi
Naoki Watanabe
Original Assignee
Hitachi Ltd
Hitachi Ulsi Sys Co Ltd
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Application filed by Hitachi Ltd, Hitachi Ulsi Sys Co Ltd filed Critical Hitachi Ltd
Publication of TW200305266A publication Critical patent/TW200305266A/zh
Application granted granted Critical
Publication of TWI290761B publication Critical patent/TWI290761B/zh

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  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)

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1290761 玫、發明說明： 【發明所屬之技術領域】 本發明係關於半導體裝置及其製造技術，特別係關於可 有效適用於具有連接半導體晶片（pellet)與外部連接端子之 金屬線之半導體裝置及其製造方法之技術。 【先前技術】 為了使IC (Integrated Circuit ;積體電路）晶片發揮其機 能’有必要將電訊號之輸出入取出於外部。因此，有利用 金線（焊接線）連接1C晶片之焊接墊部與導線框等之外部引 出用端子，然後以樹脂封裝IC晶片及金線等之安裝方法。 例如，在日本特開平1-215030號公報曾經揭示下列技 術：將利用連接器用金屬線連接半導體晶片與導線框，並 以樹脂予以封裝之半導體裝置構成其金屬線前端之球部之 厚度⑴與焊接寬（S)之比（t/s)為〇·2以下之構造，藉以防止洋 接塾部之下部所發生之裂痕14。 發明所欲解決之問題 本發明人等一向從事半導體裝置之研究•開發，且採用 利用前述金線及樹脂之半導體裝置之安裝方法。 例如，利用使金線之一端熔融壓接（第一焊接）在ic晶片之 最^之梅（配.線）之露出部之焊接塾部上，以連接冗晶片 與金線，並將金線之他請樣地熱祕（第n接）在配線基 板上〈外邵連接用端予上。再利用樹脂等密封㈣片與金 線等而完成封裝體。 〃 在此種安裝工序中 利用在烊接塾邵形成銘與金之合 1290761 金’以連接A1膜（配線）與金線之前端（球部）。 另一方面，隨著LSI (Large Scale Integrated Circuit ;大型 積體電路)之多機能化，接腳（外部連接用端子數）不斷地增 加，更配合LSI之高積體化之發展，使得接腳（外部連接用 端子）之間距也愈來愈傾向狹窄化，且在LSI之微細化之同 時，配線也逐漸趨向薄膜化。 將前述焊接方法適用於此種多機能化、高積體化之裝置 之結果，在施行評價（試驗）半導體裝置之耐用性之溫度循環 試驗後，卻頻頻發生斷線瑕症。 因此，針對此種瑕疵，經本發明人等銳意探討之結果， 獲悉其原因在於鋁與金之合金層内之破壞現象（裂痕、龜 裂）。又，如前述日本特開平^^5030號公報所示，由於在 該部位之破壞現象以焊接墊部之下部之裂痕較多因此，更 進一步加以探討時，如後面所詳細說明一般，得知鋁與金 之合金層之情形異於以往之合金層。 本發明之目的係在於提高焊接墊部（配線）與球部之接著 性。尤其係以在配線之膜厚小時，也可確保配線與球部之 接著性為目的。 又，本發明之另一目的在於利用提高配線與球部之接著 性’以增進半導體裝置之可靠性，且提高半導體裝置之製 成率。 又，本發明之另一目的在於提供可適用於焊接墊部之間 距較窄之半導體裝置及其製造方法之合適之技術。 本發明之前述及其他目的與新穎之特徵可由本專利說明 1290761 書之說明及附圖獲得更明確之瞭解。 【發明内容】 本案所揭示之發明中，較具有代表性之發明之概要可 單說明如下： ⑴本發明《半導體裝置係包含形成於半導體晶片之上方 心第一金屬膜、與形成於前述第一金屬膜上之第二金屬組 成之球部，形成於此等之間之第一金屬與第二金屬之合金 層達到則述弟-金屬膜之底部。又，也可利用樹脂覆蓋前 述球邵。又，前述球部之高度h與前述金球部之最大外周直 徑D之關係也可設定為9-D/h-2。 =)本發明之半㈣裝置係包含形成料導體晶片之上方 义弟一金屬膜'形成於前述第一金屬膜上之第二金屬组成 ^部、及形成於前述第—金屬膜與前述料之間之前述 弟金屬與乐二金屬之合金層，前述第一金屬膜與前述球 以接觸區域之直徑d、與前述合金層形成區域之直徑g之 關係可設定為g-〇.8d。又，前 、 j丈罘一金屬膜與前述球部之 接觸區域之直徑d與前述球部之悬 、、 1 &lt;取大外周直徑D之關係也可 奋又疋為d ^ 〇. 8 D。 (3) 本發明之半導體裝置之製 表匕万法係包含將墊部開口之 絕緣膜形成於半導體晶片之上 _ &lt;罘一金屬膜上後，利用 使用頻率110 kHz以上之超音波之 人@ 、 反 &lt; 起音波熱壓接法，將第二 至屬組成之球邵接著於前述墊部上之工序 (4) 本發明之半導體裝置之製 &amp; &amp;万法係包含將墊部開口之 絕緣膜形成於半導體晶片之上 万 &lt; 第一金屬膜上後，利用 1290761 將則述弟-金屬與第二金屬之合金層形成於前述第一金屬 膜與前述球部之接觸區域之观以上之區域，以便在前述第 -金屬膜上將第二金屬組成之球部接著於前述塾部上。此 以樹脂覆蓋前述球部’〖，也可將樹脂覆蓋之半導體 晶片置於高溫下以後，檢查其特性。又，也可將第二金: 組成之球部以前述接觸區域之直徑d、與球部之最大外周直 徑D保持dg〇.8D之關侈之方式加以成形。 【實施方式】 以下，依據圖式詳細說明有關本發明之實施形能。又， 在說明實施《之料时，對於具有同—機^構件， 附以同一符號予以表示，而省略其重複之說明。 兹將本發明之實施形態之半導體裝置（半導體積體電路 裝置）’依照其製造方法予以說明之。 如圖1所示，準備形成氧化碎膜u及第二層配線姐之半導 體基板卜又，在氧化珍膜„中，形成有Μ_τ (μ_ Insulator Semiconductor Fleld Effect Transist〇r ;金屬絕緣體 轉體場效電晶體）等半導體元件及第—層配線、連接元件 與第-層配線之插塞、連接第_層配線與後述第二層配線 之插塞等，惟在此省略其圖示。又，在半導體基幻中，也 適當地形成有由氧切膜等構成之元件分離部，惟在此也 省略其圖示。 其/入’如圖2所不’在第二層配線⑽上，以cvd vaporDeposltlon;化學氣相沉積）法沉積氧化碎膜12，以作 為層間絕緣膜。接著，利用乾式㈣除去第二層配線⑽上 1290761 之氧化矽膜12，以形成接觸孔C3。接著，在包含接觸孔C3 内之氧化矽膜11上，以CVD法沉積例如鎢（W)膜，以作為導 電性膜。接著，例如以 CMP (Chemical Mechanical Polishing ; 化學機械研磨）法除去接觸孔C3外部之W膜，以形成插塞 P3 〇 接著，如圖3及圖4所示，在含插塞P3上之氧化矽膜12上， 例如以藏射法依次沉積5 0 nm程度之TiN(氮化鈥）膜M3a、 700 nm程度之A1(鋁）膜M3b及50 nm程度之TiN膜M3c，以作 為導電性膜。在此，所稱之A1膜為以A1為主成分之薄膜_， 也包含與其他金屬之合金膜。 形成TiN膜M3a及M3c之目的係為確保1)提高A1膜M3b與 氧化矽膜12等之絕緣膜之接著性、及2)提高A1合金構成之 第二層配線M2之電子遷移耐性等配線之可靠性。又，除了 TiN膜外，也可使用Ti(鈦）膜、丁iW(鈦鎢）膜、Ta(鈕）膜、W 膜或WN(氮化鎢）膜之單層膜、或此等膜之疊層膜。 接著，以光阻膜（未圖示）作為光罩，將TiN膜M3a、A1膜 M3b及TiN膜M3c乾式蝕刻，以形成第三層配線M3。又，圖 4係圖3之A-A部之剖面圖（第三層配線M3之延伸方向之剖 面圖）(在圖6及圖8也同）。 接著，如圖5及圖6所示，在第三層配線M3上，例如以CVD 法依序沉積氮化矽膜及氧化矽膜，以作為保護膜，而形成 此等之疊層膜構成之純化膜41。又，純化膜41也可利用單 層予以構成。 接著，如圖7及圖8所示，在鈍化膜41之上層形成有在特 -10 - 1290761 定位置具有開口部之聚醢亞胺樹脂膜43。為了形成此聚酿 亞胺樹脂膜43 ,首先，利用旋轉塗敷法塗敷5“m程度之感 光性聚醯亞胺樹脂膜，施以熱處理（預烘烤）。接著，將聚酉氛 亞胺樹脂膜曝光、顯影而形成開口後，施以熱處理（後洪 烤），使聚醯亞胺樹脂膜硬化（熟化）。 其次，以上述聚醯亞胺樹脂膜4 3作為光罩，乾式餘列下 層之純化膜41，再將TlN膜M3c乾式蝕刻，其結果，露出ai 膜M3b之表面之一部分。此Ai膜M3b之露出區域稱為焊接墊 部BP。圖9係表示焊接墊部BP形成後之基板（晶片區域）之要 邵平面圖。 在此之前之工序多半在所謂晶圓狀態下執行。此時，將 具有夕數略呈矩形之半導體晶片區域之晶圓（半導體基板） 切斷（切割）成各個半導體晶片。 接著’在半導體晶片上之焊接墊部BP上接著（第一焊接） 金線WR，有關此工序，茲一面參照圖1〇、圖u，一面說明 如下： 首先，如圖1 0所示，準備軸心貫通金線WR用之細孔之毛 細管CA，其内部貫通金線…尺。接著，利用電焊炬（未圖示） 將來自電極之放電能施加至突出毛細管CA之前端之金線 WR ’使金線WR熔化而形成球mb。 其次，如圖11及圖12所示，使熔融球MB接著於焊接墊部 BP此接著工序係利用一面以毛細管CA加壓熔融球mb， 面對毛細管c A施加超音波之方式施行。此時，焊接墊部 BP係被未圖示之加熱器所加熱。此種處理方法稱為超音波 1290761 热壓接法。其後，拉起金線WR時，即可將金線WR接著於 焊接墊邵BP上。又，如圖12所示，被接著之金線WR之前端 稱為球邵B或金球部B。此球部B與焊接墊部BP (A1膜M3b) 係利用在此等之界面形成Al-Au合金層之方式加以接著。 圖13係表示毛細管CA之高度Z與時間T之關係。如圖13所 不，毛細管CA由時間T0開始下降，但在時間τΐ中，其速度 變小。接著，在時間T2中，熔融球MB被搭載於焊接墊部BP 上’保持該狀態一定期間（時間T2〜T3)。此期間稱為焊接期 間。其後（時間T3以後），毛細管C A上升，拉起金線WR。又， 如圖14所示，拉起之金線WR例如被超音波熱壓接於配線基 板60上之印刷配線（未圖示）上（第二焊接）。 茲說明有關本發明人所探討之技術。 首先，針對在膜厚t為700 nm程度之A1膜M3b上接合金線 WR時，在溫度循環試驗後發生斷線的瑕疵之情形，探求斷 線處之結果，如圖15所示，獲悉在Al-Au合金層50中已經發 生裂痕（crack)。因此，更詳細分析Al-Au合金層50之結果， 發現Al-Au合金層50由下層算起，係由Α1Αιΐ2膜50a、A12Au5 膜50b、及AIA114膜50c所組成（參照圖16及圖17)。且確認在 金球部B與焊接墊部BP(A1膜M3b)之界面有未形成Al-Au合 金層50之區域53。又，在組成Al-Au合金層50之A1Au2膜 50a、AI2A115膜 50b、及 AIA114膜 50c 中’最穩定的是 AI2A115。 圖16及圖17係圖15之圓圈圍成之區域E部之放大圖。 由於在A1膜M3b之膜厚較大，例如為1000 nm程度時，並 未確認到有A1Au4存在，因此認為此現象可能係由於A1膜 -12 - 1290761 M3b(配線）之薄膜化，減少μ之供應量，而在金球部6侧產 生A1之組成比小之AlAu4膜所致。 其結果，如圖16所示，在Al-Au合金層50之形成時，在 AhAu5膜50b與AlAu4膜50c之間，產生合金化反應之非整合 部，而成為空隙（空孔）55。 此種空隙因溫度循環試驗而擴大，成為如圖17所示之裂 痕、·冬於/貝變成為斷線瑕戚。又，在裂痕部有產生A1及Au 等之氧化物Ox。此係由於後述之封裝樹脂中所含之微量氧 氣所引起。 為了避免斷線之發生，固然可考慮採用擴大嫁化金球部Β 之範圍，以增加Α1膜M3b之接著面積之方法，但，擴大熔化 金球部B之範圍時，即無法再確保與相鄰之焊接墊及在其上 之別的金球之短路容許範圍，而增加短路（sh〇rt)不良之發 生。特別因半導體裝置之微細化，使焊接墊部Bpi間隙變 小時’此短路不良之問題會變得更為嚴重，且擴大溶化金 球部B之範圍時，有時焊接條件對烊接塾造成之傷害有可能 加大。 因此本I明人等乃探討在不大幅變更金球部B之形狀 下可面將其，欠形量控制於技術規格值以内，一面確保 接合強度之金球部B之形狀及其製造工序。 首先，面參照圖丨.8，一面說明有關金球部B之形狀。如 圖18所示，將金球部B之連接區域直徑d、與金球部B之最大 卜周直仏D之關係叹定為d^〇 8D。所謂連接區域—係指金 球邵B與A1膜M3b(配線）之接觸區域。所謂連接區域直徑d -13 - 1290761 係指金球部B與A1膜M3b(配線）之接觸區域之直徑。 利用此種關係，可確保短路容許範圍，並確保接觸面積。 又，利用金球部B之連接區域Ad與金球部B之最大外周所 劃分之區域AD之關係來表示d - 0.8D之關係時，為Ad -0.64AD。又，如將製造之墊部之表面狀態及焊接條件之差 異列入考慮時，滿足Ad-0.7AD之關係更為理想。 又，金球部B之高度h以9-D/h-2之範圍為宜，且D在65 以下時，以在5//m以上15//m以下為宜。又，金球部b 之直徑（寬）WW以在25//m以下為宜。 又，金球部B之連接區域直徑d與Al-Au合金層50之形成區 域直徑g之關係設定為g^〇.8d。 構成此種關係時，可確保金球部B與A1膜M3b(配線）之 Al-Au合金層50之接合強度，降低前述空隙及裂痕之影響， 其結果，可降低連接不良。 又，利用金球部B之連接區域Ad與Al-Au合金層50之形成 區域Ag之關係來表示g^〇.8d之關係時，為Ag^0.64Ad。 又，依據後述之資料（圖23)，以滿足Ag- 0.7Ad之關係更為 理想。 因此，即使A1膜M3b之膜厚例如在700 nm以下且形成A1 之組成比小之合金層（A1Au4)時，也可確保接合強度。 在此，A1膜M3b為薄膜時，Al-Au合金層50會延伸至A1膜 M3b之底部，因此，Al-Au合金層50之下層有TiN膜M3 a存在 (參照圖27)。 又，本實施形態之連接區域直徑d、金球部B之最大外周 -14- 1290761 直l D及Al_Au合金層50之形成區域直徑§無必要為正圓之 直徑，只要屬於此等區域之中心部之線段即已足夠。 對此，本發明人將A1膜之膜厚較大，且焊接墊部Bp之間 距較大時所探討之焊接條件，例如，㈣將此料中坪接 溫度、焊接期間設定為相同，而將毛細管與金線直徑變更 為對應太所希望之墊距之直徑（初期球體積），調整焊接載重 與超音波施加輸出，以所希望之壓接球徑之方式，在薄的 A1膜上施行焊接時，呈現圖19所示之形狀。 此時，金球邵B之連接區域直徑d、與金球部B之最大外周 直徑D心關係為d$〇.8D，又，金球部3之連接區域直徑d與 Al-Au合金層50之形成區域直徑§之關係為〇 8d。 因此，難以確保金球部B與AW4M3b(配線）之A1_Au合金層 50之接合強度。尤其八丨膜較薄時，會產生較厚之八丨組成比 小的ΑΙΑιμ膜，受到其後之溫度循環試驗之影響時，即容易 在AlAu4膜之界面發生裂痕。 此現象例如如圖20所示，也可能在焊接墊部Bpt間距寬 達130#m之情形中發生。但，此時，由於可確保較大之絕 對的接合區域及Al-Au合金層之形成區域直徑，故可避免發 生斷線瑕疵。在此，所稱之焊接墊部Bp之間距，係指焊接 墊部BP之中心部間之距離而言。 但，如直接將圖19所示之球部B之形狀縮小，以適用於窄 間距（例如70//m以下）時，卻會發生接觸不良。且欲在此形 狀下’確保連接區域時，由於金球部B之連接區域直徑d、 與金球部B之最大外周直徑〇之差較大，故會發生短路不 1290761 良。 對此’採用圖1 8所示之本實施形態之構成時，可確保金 球部B與A1膜M3b(配線）之Al-Au合金層之接合強度，且可確 保短路谷許範圍。尤其可有效適用於窄間距之焊接塾部B p 及薄A1膜（配線）上之焊接墊部Bp。 其次，說明圖1 8所示之形狀之金球形成用之焊接工序之 一例0 例如，在熔融球MB搭載於焊接墊部BP上之焊接期間（圖 13之時間T2〜T3)施加11〇 kHz以上之超音波。 圖21係表示各超音波頻率之壓接球部之直徑（#m)與抗剪 強度（N)之關係。又，接合溫度為2〇(rc，初期之球徑為” 土 5 # m。所謂抗剪強度（n)係指由橫方向對球部B施加應 力，在增加其應力之際，使球部B達到剝離時之應力而言。 如圖21所示，例如，施加12〇]^1^及18〇]&lt;112之頻率之超音 波之抗男強度比施加60 kHz之頻率之超音波之抗剪強度更 大。在120 kHz與180 kHz中，180 kHz之超音波方面之抗剪 強度稍大。又，施加例如60 kHz之頻率之超音波在壓接球 徑SOem程度時之抗剪強度為〇 35N，但施加例如18〇 ^^^之 頻率之超音波在壓接球徑42 程度時，也可確保同等之抗 剪強度（0.35N)。 圖22係表示各超音波頻率之超音波振幅㈧叫與抗剪強度 (N)之關係。如圖22所示，可知··頻率愈高時，振幅α⑷ 愈小，且屬於點振幅。振幅小時，也具有降低焊接傷 害之效果。 1290761 其次，依據圖21所示之抗剪強度之結果，調查各超音波 頻率之壓接球部直徑（/zm)與合金形成面積率（％ )之關係， 其結果如圖23所示。所謂合金形成面積率，係指對抗剪結 果顯現於焊接墊部BP上之壓接印面積l之合金形成面積s 之比例（％)。 … 如圖23所示，例如，施加12〇kHz之超音波（曲線圖化》及 施加180 kHz之超音波（曲線圖⑷）之合金形成面積率（％)比 施加60 kHz之頻率之超音波（曲線圖⑷）之情形更大。又，在 120他與18〇 kHz中，施加刚版之合金形成面積率⑼ 較大。又，施加例如18GkHz之頻率之超音波在壓接球⑽ 轉〜程度時，可獲得⑽以上之合金形成面積率⑼，
但施加例如m kHz之料之超音波在壓接球徑W m程度時，也可獲得7G%之合金形成面積率（％)。 在此，雖_料大超音波^率1 造之金球部3及A1_Au合金層 斤丁 &lt;構 心合金層之形狀之要辛，仍:：可5周整金球部Μ 素。 狀t要素，仍可考慮使用圖25所示之要 杜吳骨波方 ，除了頻率（f)以外，尚 施加超音波之時間⑷以及毛細管所引起有=田（啦 墊部BP之加熱溫度（t)等。 （）及焊為 具體而言，除了增大超音波 慮採用在焊接期間（時 万法以外，仍可考 間丁2〜丁3)使毛細管cA所？丨如、礼 (F)緩慢上升或階段丄 CA所引起&lt; 載重 乂㉟段地增大等方法， 方面，除了時間之It 且在起曰波又施加時間 長心外’可考慮採用在焊接期間以前 -17- 1290761 即施加超音波等之方法及組合此等條件之方法（參照圖26)。 圖24係表示焊接墊部之間距（pad pitch)、和金球部b之連 接區域直徑d與Al-Au合金層之形成區域直徑g之比（g/d)之 關係。曲線圖（a)之上部區域表示可確保金球部8之可靠性 之區域Q，曲線圖（a)之下部區域表示發生斷線瑕疵之區域 NQ。又，A1膜之膜厚為7〇〇 nm。 如圖24所tf，比值（g/d)在80%以上時，即使焊接墊部之間 距在60//m以下，仍可確保可靠性。 圖27係表示將金線WR接著（第一坪接）於焊接墊部61&gt;上 之後之基板之要部剖面圖。 接著，如參照圖14所說明，將金線界尺超音波熱壓接（第 二焊接）於玻璃環氧等配線基板60上之印刷配線（未圖示） 上。圖28係表示第二焊接後之IC晶片j及配線基板6〇之狀態 (立體圖）。圖29係圖28之圓圈部之要部放大圖。 接著，如圖30所示，利用樹脂封裝體64，將金線WRiic 晶片周圍密封。例如，前述樹脂封裝體64係利用以模具夾 持配線基板60，將熔融樹脂注入模具内，使其硬化而予以 在封 &lt; 傳迗模塑法所形成。前述樹脂例如係含有二氧化矽 作為填料之環氧系熱硬化性樹脂。 在此樹脂之注入或硬化之際，需將應力施加至金線…厌及 其球斗B，但依據本實施形態，由於將金球部B之連接區域 直徑d、與Al-Au合金層50之形成區域直徑g之關係設定為g -〇.8d，故可確保金球部3與八1膜M3b(配線）之Ai_Au合金層 5〇之接合強度。 1290761 前述樹脂封裝體64形成後，在配線基板6〇之背面形成凸 塊電極62。此凸塊電極連接於形成在前述配線基板6〇之背 面之背面電極，惟此並未予以圖示。 則逑背面電極經由配線基板60之内部配線而電性連接於 至線WR。前述凸塊電極62例如係用來施行對搭載有可攜式 機器等所使用之多數電子零件之安裝基板之電性連接。 · 又，圖30所示之實施形態稱為BGA(ballgridarray:球柵陣 嫌 列）。 此後，為了保證製品壽命，利用未出貨之樣品執行溫度鲁 循環試驗等品質試驗。在此溫度循環試驗中，將半導體裝 置施以例如顧客安裝時之熱歷程處理（260 °C X l〇s X 3次） 後，置於15(TC之高溫下10分鐘，接著，置於_55艺之低溫 下10分鐘，如此交互施行1000次（1000個週期）。 此時，由於樹脂64、1C晶片1及配線基板60之熱膨脹係數 不同’故树脂64與1C晶片因熱而變形之程度也不同，其会士 果’在每1週期均會對金球部B施加應力。 _ 但’在本實施形態中，由於將金球部B之連接區域直徑d、 與ΑΙ-Αιι合金層50之形成區域直徑g之關係設定為g^〇 8d， 故可確保金球部3與八1膜]^131)(配線）iA1_Au合金層5〇之接 合強度’防止應力所引起之斷線。 ，· 又，縱使在A1膜M3b(配線）薄膜化，因AiAu4膜之產生而 形成較難承受應力之部分時，也可確保接合強度，防止斷 ^ 線。對此’為了防止AIA114膜之產生，固然也可考慮在金線 WR之第一焊接之前，在焊接墊部Bp上增加一層八〗膜。但， -19- 1290761 此情形卻會因增加一層A1膜而使工序複雜化。對此，依據 本實施形態，可避免因增加一層A1膜而使工序複雜化。 又’一般，焊接墊與墊以外之配線圖案雖係同時形成， 但適用本實施形態時，連有利於細化IC晶片上之配線寬之 薄的A1膜也可獲得充分之強度。 因此，可利用形成更微細之圖案，以提高晶片之積體度， 故可增加每1塊晶圓所能取得之晶片數，降低製造成本。 又，由於半導體裝置之微細化及高機能化可達成多接腳 化’故在焊接墊邵BP已變小之情形下，仍可確保接合強度， 防止斷線。 又，由於半導體裝置之微細化及高機能化可達成多接腳 化，故在焊接墊部BP之間距已變小之情形下，仍可確保接 合強度，防止斷線。 另外，如將金球邵B之連接區域直徑d、與金球部B之最大 外周直徑D之關係設定為d — 0.8D，則由於半導體裝置之微 、·、田化及鬲機能化可達成多接腳化，在焊接塾部Bp之間距已 變小之情形下，仍可確保金球之短路容許範圍。 以上，已就本發明人所創見之發明，依據實施形態予以 具體說明，μ發明並不I限定於前述實施形態，在不脫 離其要旨之範圍内，當然可作種種適當之變更。 特別在前述實施形態中，雖將本發明應用於嫌與金球 部Β之接合’但除此之外’也可廣泛適科利用形成合金層 万式接合金屬配線與金球部（例如也可為凸塊電極）之半導 體裝置。 -20 - 1290761 本實施形怨不僅適用於BGA，也可適用於使用導線框之 QFP (quad flat package:扁平式四邊有接腳型封裝體）之半 導體裝置。 發明之效果 本案所揭7F (發明中，較具有代表性之發明所能獲得之 效果可簡單說明如下： 在利用第一金屬與第二金屬之合金層接合形成於半導體 晶片之上方之第一金屬膜、與形成於第二金屬組成之球部 之際，由於將前述第一金屬膜與前述球部之接觸區域之直 徑d、與前述合金層形成區域之直徑g之關係設定為g ^ 〇.8d，且將接觸區域之直徑d與球部之最大外周直徑]〇之關 係設足為d - 0.8D，故可確保具有第一金屬膜之配線與球部 之接著性。 又，可提高半導體裝置之可靠性。 又，可提高半導體裝置之製成率。 又，一般，焊接墊與墊以外之配線圖案雖係同時形成， 但適用本實施形態之構成時，連有利於細化1〇晶片上之配 線寬之薄的A1膜也可獲得充分之強度。 因此，可利用形成更微細之圖案，提高晶片之積體度， 故可增加每1塊晶圓所能取得之晶片數，降低製造成本。 【圖式簡單說明】 圖1係表7F本發明之實施形態之半導體裝置之製造工序 之基板之要部剖面圖。 圖2係表示本發明之實施形態之半導體裝置之製造工序 1290761 之基板之要部剖面圖。 圖3係表不本發明之實施形態之半導體裝置之製造工序 之基板之要部剖面圖。 圖4係表示本發明之實施形態之半導體裝置之製造工序 之基板之要部剖面圖。 圖5係表示本發明之實施形態之半導體装置之製造工序 之基板之要部剖面圖。 圖6係表示本發明之實施形態之半導體裝置之製造工序 之基板之要部剖面圖。 圖7係表示本發明之實施形態之半導體裝置之製造工序 之基板之要部剖面圖。 圖8係表示本發明之實施形態之半導體裝置之製造工序 之基板之要部剖面圖。 圖9係表示本發明之實施形態之半導體裝置之製造工序 之基板之要部平面圖。 圖10係表示使用於本發明之實施形態之半導體裝置之製 造工序之毛細管之圖。 圖11係表示本發明之實施形態之半導體裝置之製造工序 之基板（焊接墊部）之要部剖面圖。 圖12係表示本發明之實施形態之半導體裝置之製造工序 之基板（焊接墊部）之要部剖面圖。 圖13係表示使用於本發明之實施形態之半導體裝置之製 造工序之毛細管之動作之曲線圖。 圖14係表示本發明之實施形態之半導體裝置之製造工序 1290761 之基板（焊接墊部）之要部剖面圖。 圖15係說明本發明之實施形態之效果之半導體裝置之焊 接墊部之要部剖面圖。 圖16係說明本發明之實施形態之效果之半導體裝置之焊 接墊部之要部剖面圖。 圖17係說明本發明之實施形態之效果之半導體裝置之焊 接墊部之要部剖面圖。 圖18係本發明之實施形態之半導體裝置之焊接墊部之要 邵剖面圖。 圖19係說明本發明之實施形態之效果之半導體裝置之焊 接塾邵之要部剖面圖。 圖20係說明本發明之實施形態之效果之半導體裝置之烊 接墊部之要部剖面圖。 圖21係表示各超音波頻率之壓接球部之直徑（/zm)與抗剪 強度（N)之關係之曲線圖。 圖22係表示各超音波頻率之超音波振幅（//m)與抗剪強度 (N)之關係之曲線圖。 圖23係表示各超音波頻率之壓接球部直徑（#m)與合金形 成面積率（％)之關係之曲線圖。 圖24係表示烊接墊部之間距、和金球部6之連接區域直徑 d與ΑΙ-Αιι合金層之形成區域直徑g之比（g/d)之關係之曲線 圖。 圖25係表示本發明之實施形態之半導體裝置之製造工序 之基板（焊接塾部）之要部剖面圖。 1290761 圖26係表示使用於本發明之實施形態之半導體裝置之製 造工序之毛細管之動作等之曲線圖。 圖27係表示本發明之實施形態之半導體裝置之製造工序 之基板之要部剖面圖。 圖28係表示本發明之實施形態之半導體裝置之製造工序 之基板等之立體圖圖。 圖29係表示本發明之實施形態之半導體裝置之製造工序 之圖28之局部放大圖。 圖30係表示本發明之實施形態之半導體裝置之製造工序 之基板等之立體圖圖。 圖式代表符號說明 I 半導體基板 II 氧化矽膜 12 氧化矽膜 41 鈍化膜 43 聚醯亞胺樹脂膜 50 Al-Au合金層 50a A1Au2 膜 50b Al2Au5 膜 50c AIA114 膜 53 區域 55 空隙（空孔） 60 配線基板 62 凸塊電極 -24- 1290761 64 樹脂 B 金球部（球部） BP 焊接墊部 C3 接觸孔 CA 毛細管 E 區域 M2 第二層配線 M3 第三層配線 M3a TiN膜 M3b A1膜 M3c TiN膜 MB 熔融球 〇x 氧化物 P3 插塞 TO 〜丁 3 時間 WR 金線 L 壓接印面積 S 合金形成面積 d 金球部與A1膜之連接（接觸）區域直徑 Ad 金球部與A1膜之連接（接觸）區域 g Al-Au合金層之形成區域直徑 Ag Al-Au合金層之形成區域 D 金球部之最大外周直徑 AD 金球部之最大外周所規定之區域
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h WW 金球部之高度 金球部之直徑（寬）
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Claims (1)

1^0冢紐104922號專利申請案I购、 中文申請專利範圍替換本一一 〜 拾、申諳專利範園： 1· 一種半導體裝置，其特徵在於包含·· 0)形成於半導體晶片上方 (b)由形成於前述第一金屬膜上 诞， 球部；及 〈罘二金屬所組成之 (C)形成於前述第一金屬膜 一全龎盥篆-八昆、人 』迮球部之間之前述第 鱼屬舁罘一金屬又合金層；其中 ⑷：述合金層達到前述第一金屬膜之底部； (e)前述球部係被樹脂所覆蓋。 2· —種半導體裝置，其特徵在於包含： (a) 形成於半導體晶片上 膜； 乂銘（八丨）為主成分之A1 (b) 形成於前述八丨膜上而以 部；及 王1Au)為王成分之金球 ⑷形成於前述A1膜與前述金球部之間之鋁與金之合 金層；其中 口 (d) 刖述合金層達到前述A1膜之底部； (e) 前述金球部係被樹脂所覆蓋。 3·如申請專利範圍第2項之半導體·;置，纟中前述合金層 中包含A1Au4膜。 4.如刚利範圍第2項之半導體裝置，其中前述合金層 係包含璺層膜’在前述疊層膜中，相對於鋁之金之組成 比由下層向上層增大。 5·如申請專利範圍第2項之半導體裝置，其中前述合金層 1290761 係由下層起包含A1Au2膜、Al2Au5膜及A1Au4膜。 6·如申請專利範圍第2項之半導體裝置，其中前述A1膜之 膜厚在700 nm以下。 如申请專利範圍第2項之半導體裝置，其中 前述半導體裝置係包含多數之前述A1膜， 則述多數A1膜係被將墊區域開口之絕緣膜所覆蓋， 前述墊區域之最短距離在7〇//m以下。 •如申請專利範圍第2項之半導體裝置，其中前述金球部 之最大外周直徑在65//m以下。 9·如申請專利範圍第2項之半導體裝置，其中前述金球部 之南度h與如述金球邵之最大外周直徑〇之關係為9 ^ - 2 〇 10·如申請專利範圍第2項之半導體裝置，其中前述金球部 之向度在15//m以下。 h如申請專利範圍第2項之半導體裝置，其中前述金球部 之南度在以上l5//m以下。 12·如申請專利範圍第2項之半導體裝置，其中金線係由前 述金球部上延伸至外部連接端子。 13·—種半導體裝置，其特徵在於包含： (a) 形成於半導體晶片上方之第一金屬膜； (b) 由形成於前述第一金屬膜上之第二金屬所組 球部；及 &quot; (C)形成於前述第一金屬膜與前述球部之間之前述第 —金屬與第二金屬之合金層；其中 -2- 14. 15. 16. 17. 18. 19. 20. 21. 22. w前述合金層達到前述第—金屬膜之底部； 、⑷前述球部之高度h與前述金球部之最大外周直徑d 又購係為9-D/hg2。 如申請專利範圍第13項之丰壤喊世班 、·^牛導體裝置，其中前述第一金 屬膜係以鋁（A1)為主成分之膜， 、 ，則逑球部係以金（Au)為 主成分之球部。 如申請專利範圍第Η項之半導触 丄 心千導眼裝置，其中前述合金層 中包含A1Au4膜。 如申請專利範圍第14項之半導體裝置，其中前述合金層 係包含疊層膜’在前述疊層膜中，相對㈣之金之組成 比由下層向上層增大。 如申請專利範圍第14項之半導體裝置，其中前述合金層 係由下層起包含姐化膜、Al2Au5膜及aiau4膜。 如申請專利範圍第14項之半導體裝置，其中前述A1膜之 膜厚在700 nm以下。 如申請專利範圍第14項之半導體裝置，其中 前述半導體裝置係包含多數之前述A1膜， 則述多數A1膜係被將墊區域開口之絕緣膜所覆蓋， 前述墊區域之最短距離在7〇#m以下。 如申請專利範圍第14項之半導體裝置，其中前述金球部 之最大外周直徑在65//m以下。 如申請專利範圍第14項之半導體裝置，其中前述金球部 之鬲度在15 //m以下。 如申請專利範圍第14項之半導體裝置，其中前述金球部 -3- 1290761 之南度在5//m以上15//m以下。 23.如申請專利範圍第14項之半導體裳置，其中金線係由前 述金球邵上延伸至外部連接端子。 24· —種半導體裝置，其特徵在於包含： (a) 形成於半導體晶片上方之第一金屬膜； (b) 由形成於前述第一金屬膜上 ^ 球部；及 弟-金屬所組成之 ⑷形成於前述第-金屬膜與前述球部之間之前述第 金屬與第二金屬之合金層；其中 ⑷前述第-金屬膜與前述球部之接觸區域之直η 與前述合金層形成區域之直徑§之關係為g&gt;〇8d。工 請專利_第24項之半導體裝置，其切·述第一金 主成分之球部。 …係以金㈣為 况如申請專利範圍第24項之半㈣^ 達到前述第一金屬膜之底部。 /、 1、、’層 2入如申請專利範圍第24項之半導體以， 域之直徑d與前述球部之最大外周m區 〇.8D。 仏U又關係為 28. 如申請專利範圍第24項之半導體裝置，复由义 域係以前述球部之最大外周所劃分之區域之=接觸區 29. 如申請專利範圍第25項之半導體裳置， :上。 中包含乂八…膜。 ，、中則述合金層 30. 如申請專利範圍第25項之半導髀#苗 -4- 4置，其中前述合金層 1290761 係包含疊層膜，在前述疊層膜中，相對於鋁之金之組成 比由下層向上層增大。 h如申請專利範圍第25項之半導體裝置，其中前述合金層 係由下層起包含A1AU2膜、AIMW膜及“AW膜。 如申清專利範圍第25項之半導體裝置，其中前述A1膜之 膜厚在700 nm以下。 33·如申請專利範圍第乃項之半導體裝置，其中 前述半導體裝置係包含多數之前述A1膜’ 前述多數A1膜係被將墊區域開口之絕緣膜所覆蓋， 前述墊區域之最短距離在7〇/Zm以下。 34·如申請專利範圍第25項之半導體裝置，其中前述以金 (Au)為主成分之球邵之最大外周直徑在以下。 35.如申请專利範圍第25項之半導體裝置，其中前述以金 (Au)為主成分之球邵之高度h與前述金球部之最大外周 直徑D之關係為9 - D/h - 2。 36·如申請專利範圍第25項之半導體裝置，其中前述以金 (Au)為主成分之球邵之高度在I? 以下。 3 7.如申請專利範圍第25項之半導體裝置，其中前述以金 (An)為主成分之球邵之高度在5#m以上15//m以下。 38·如申請專利範圍第25項之半導體裝置，其中金線係由前 述以至（Au)為主成为之球部上延伸至外部連接端子。 39· ^種半導體裝置，其特徵在於包含·· (a) 形成於半導體晶片上方之第一金屬膜； (b) 由形成於前述第一金屬膜上之第二金屬所組 -5- 、’ !29〇76l 球部；及 (c) 形成於前述第一金屬膜與前述球部之間之貧述第 金屬與第二金屬之合金層；其中 (d) 在前述第一金屬膜與前述球部之接觸區域之 以上之區域形成合金層。 40. 41. 42. 如申請專利範圍第39項之半導體裝置，其中前述接觸區 域疋直徑d與前述球部之最大外周直徑D之關係為4^ 0.8D 〇 種半導體裝置，其特徵在於包含： · (a) 形成於半導體晶片之上方之第一金屬膜； (b) 由形成於前述第一金屬膜上之第二金屬所組成之 球部；及 (c) 形成於前述第一金屬膜與前述球部之間之前述第 一金屬與第二金屬之合金層；其中 (d) 則述第一金屬膜與前述球部之接觸區域之直徑^ 與前述球部之最大外周直徑!3之關係為〇·8Γ)。 一種半導體裝置，其特徵在於包含： 胃 (a) 开;?成於半導體晶片上方之第一金屬膜； (b) 由形成於前述第一金屬膜上之第二金屬所組成之 球部；及 - (c) 形成於如述第一金屬膜與前述球部之間之前述第 _ 一金屬與第二金屬之合金層丨其中 * (d) 前述第一金屬膜與前述球部之接觸區域係以前述 球部之最大外周所劃分之區域之7〇%以上。 129〇761 .—種半導體裝置之製造方法，其特徵在於包含： (a) 在半導體晶片區域上方形成第一金屬膜之工序； (b) 於前述第一金屬膜上形成使前述第一金屬膜上之 塾邵開口之絕緣膜之工序；及 (勹利用超音波熱壓接法，將由第二金屬所組成之球 部接著於前述墊部之工序，其係使用頻率11〇 kHz以上 之超音波進行接著。 44·如申請專利範谓第43項之半導體裝置之製造方法，其中 則述（c)工序係在施加前述超音波之期間，使施加在前 述墊部之加壓力上升。 45·如申請專利範圍第43項之半導體裝置之製造方法，其中 在前述（c)工序之後，包含（d)以樹脂覆蓋前述球部/，、以 施行封裝之工序。 46. —種半導體裝置之製造方法，其特徵在於包含： (a) 在半導體晶片區域上方形成第—金屬膜之工序； (b) 於前述第一金屬膜上形成使前述第一金屬膜上之 墊部開口之絕緣膜之工序； (C)利用超音波熱壓接法 邵接著於前述墊部之工序 之超音波進行接著； 將由第二金屬戶斤組成之球 其係使用頻率110 kHz以上 (d) 以樹脂覆蓋前述球部，以施行封襞之工序· (e) 在前述（d)工序之後，準備多數個被封裝之半^彳 晶片，將前述多數個半導體晶片之一部 ' 1刀置於鬲溫下 以檢查其特性之工序。 -7- 1290761 47. 一種半導體裝置之製造方法，其特徵在於包含： (:)在：導體晶片區域上方形成第—金屬膜之工序； 孰a万、則迷弟—金屬膜上形成使前述第-金屬膜上之 土邵開口之絕緣膜之工序； ^ (C)將由第二金屬所組成之球部形成於前述第一金屬 膜上之工序’其係將前述第—金屬與第二金屬之合金層 成二則述第一金屬與前述球部之揍觸區域之70%以 上之區域，藉以將前述球部接著於前述墊部上； ⑷利用樹脂覆蓋前述球部，以施行封裝之工序；及 ⑷在前述⑷工序之後，準備多數個被封裝之半導體 晶片，將前述多數個半導體晶片之—部分置於高溫下， 以檢查其特性之工序。 48. 一種半導體裝置之製造方法，其特徵在於包含： ⑷在半導體晶片區域上方形成第一金屬膜之工序； (b)於前述第一金屬膜上形成使前述第一金屬膜上之 塾部開口之絕緣膜之工序； (C)將由第二金屬所組成之球部形成於前述第一金屬 膜上之工序，其係將前述第一金屬與第二金屬之合金層 形成於前述第一金屬與前述球部之接觸區域之70% 2 上之區域，藉以將球部接著於前述第—金屬膜上，前 述接觸區域之直徑d與球部之最大外周直徑0之關係2 d — 0.8D :及 (d)利用樹脂覆蓋前述球部，以施行封裝之工序 一種半導體裝置之製造方法，其特徵在於包含： -8- ° 49. 1290761 (a) 在半導體晶片區域上方形成第一 (b) 於前述第一金屬膜上形成使前逑 墊部開口之絕緣膜之工序，· 卞)將第二金屬組成之球部形成於 U序’其係將前述第—金屬與第 八至屬膜 於前述第-金屬膜與前述料 =金層形 :=猎:將球部接著於前述第-金屬膜上，前述 =域…d與球部之最大外周直經d之關係^ ⑷利用樹脂覆蓋前述球部，以施行封裝之工序.及 =在前述⑷工序之後，準備多數個被封裝之半導體 :片’將前述多數個半導體晶片之-部分曝露在高温 下，以檢查其特性之工序。 50, 金屬膜之工序； 第一金屬膜上之 :種：導體裝置之製造方法，其特徵在於包含：⑷在 丰導體晶片區域上方形成第一金屬膜之工序; ⑻於前述第-金屬膜上形成使前述第—金屬膜上之 墊邵開口之絕緣膜之工序；及 上之超音波進行接著； (c)利用超音波熱壓接法， 接著於前述塾部上之工序 到達前述第一金屬膜底部之 kHz以 將由第二金屬組成之球部 其係以前述球部之一部份 方式接著，並使用頻率11 〇 其中在前述工序（。）中，在施加上述超音波期 施加在前述墊部之加壓 51·如申請專利範圍第％項 間，使 力上升。 之半導體裝置之製造方法，其 中 1290761 以 在前述（C)工序之後，包含（d)以樹 A 打如覆盍前述球部’ 她订封裝之工序。 52·如申請專利範圍第50項之半導 、 爷裝置之製造方法，其中 在前述球部與前述墊部接觸前施加前述超立、 /' M· —種半導體裝置之製造方法，盆 &lt; S音波。 /、特破在於包含：（a)在 半導體晶片區域上方形成第一金屬膜之工序· (b) 於前述第—金屬膜上形成使前述第屬膜上之 塾邵開口之絕緣膜之工序； (c) 利用超音波熱壓接法，將由第— ^ 、 对田罘一金屬組成之球部接 著於前述墊部上之工序，：It佴以命、 /、係以則述球部之一部份到達 前述第一金屬膜底部之方式接著，你 安考並使用頻率110 kHz 以上之超音波進行接著； (d) 利用樹脂覆蓋前述球部，以施行封裝之工序·及 (e) 在前述（d)工序之後，準備多數個經封裝之半導體晶 片，將前述多數個半導體晶片之一部分曝露在高溫 以檢查其特性之工序： 〇 其中在前述工序（c)中，在施加上述超音波期間，使施 加在前述墊部之加壓力上升。 54· —種半導體裝置之製造方法，其特徵在於包含··（句在 半導體晶片區域上方形成第一金屬膜之工序； Ε (b) 於前述第一金屬膜上形成使前述第一金屬膜上之 墊部開口之絕緣膜之工序； (c) 將由第二金屬組成之球部形成於前述第一金屬膜 上之工序，其係以前述球部之一部份到達前逑第一八 -10- 孟屬 1290761 膜底部之方式接著，且藉由將前述第_金 之合金層形成於前述第一金屬膜與前：= 域之70%以上之區域，驻乂、+、分. 要觸 膜上； &amp;將則述球邵接著於前述第-金屬 ⑷利用樹脂覆蓋前述球部，以施行封裝之 ⑷在前述⑷工序之後，準備多數個經封裝導=曰 片，：前述多數個半導體晶片之—部分曝 以檢查其特性之工序； 隹呵/皿下， 其中在前述工序， &gt; 加在前述塾部之加壓力上升⑩° 4超音波期間，使施 55.:1 =利範圍第5,之半導體裝置之製造方法，巧 在則'求邵與前述藝部接觸前施加前述超&quot;、 A I種IT體裝置之製造方法，其待徵在於包含:⑷在 ’導體亡片區域上方形成第-金屬膜之工序;° · 3 形成使前述第-金屬膜上之 :第：“二形成於--金屬膜 &lt;工序，其係以前述球部之一 膜底部之方々 。刀到達前述第一金屬 之合金〜人I’；&quot;藉由將前述第-金屬與第二金屬 王層形成於前述第一金屬 域之㈣以上之區域，將球部接著邵之接觸區 上，前逑接心域之直㈣與球 ^金屬膜 關係為dg〇.8D;及 取大外周直徑D之 (d)利用樹脂霜客命 、 覆^述;f邵，以施行封裝之工序，· 1290761 其中在前述工序⑷中，在施加上述超音波期間，使 她加在前述墊部之加壓力上升。 種半導體裝置之製造方法，其特徵在於包含 +導體晶片區域上方形成第-金屬膜之工序； ()7、则述第-金屬膜上形成使前述第-金屬膜上、 塾部開口之絕緣膜之工序； ’屬膜上《 ⑷將由第二金屬組成之球部形成㈣述第—金 膜Γ序’其係以前述球部之—部份到達前述第-金屬 膜：邵之方式接著，且藉由將前述第一金屬與： 域之卿。以上之£二 與則述球部之接觸區 ^ 应域，將球部接著於前述第一金屬膜 :处接觸區域之直徑d與球部之最大外 關係為d^〇.8D; &lt; ⑷利用樹脂覆蓋前述球部，以施行封裝之 ⑷在前述⑷工序之後，準備多數個 ， 晶片，將前述多數個半導體晶片之一部分眼：：導體 下，以檢查其特性之工序； 暴路在高溫 其中在前述工序（C)中，在施加上述超音 加在前述墊部之加壓力上升。 〃《，使施 -12-
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