JP4556436B2 - 半導体装置 - Google Patents

半導体装置 Download PDF

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Publication number
JP4556436B2
JP4556436B2 JP2004015839A JP2004015839A JP4556436B2 JP 4556436 B2 JP4556436 B2 JP 4556436B2 JP 2004015839 A JP2004015839 A JP 2004015839A JP 2004015839 A JP2004015839 A JP 2004015839A JP 4556436 B2 JP4556436 B2 JP 4556436B2
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Prior art keywords
bonding
semiconductor
gold
gold wire
semiconductor element
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JP2005209938A (ja
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浩史 藤田
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Sumitomo Bakelite Co Ltd
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Sumitomo Bakelite Co Ltd
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Description

本発明は耐熱性に優れた半導体装置に関するものである。
従来より、金線により半導体素子と外部端子につながるリ−ドフレームまたはパターン加工された配線基板とを接合する技術は半導体装置の製造方法として広く知られていたが、金線と半導体素子上に作られたアルミ配線部（いわゆるボンディングパッド部）の接合状態を明確に規定したものは無かった。
近年の半導体装置は技術革新が飛躍的に進み、金線のファインピッチ化、接合速度の高速化、金線接合時の接合圧力による半導体素子へのダメージ、スタック技術に代表される半導体装置の内部構造の変革による接合条件の変化などによって接合部の信頼性は著しく低下する傾向にある。
従来技術として下記特許文献１に示すような金−アルミ接合に関する接合方法や接合強度向上のための手法、特許文献２に示すような合金層生成時の厚みを制限する手法、特許文献３に示すような接合部材の薄膜の厚みを制限した手法などに関するものおよび非特許文献１のように封止材料が接合部の信頼性に影響を与えることを示す研究、非特許文献２のように接合部の信頼性を示めす高温保管処理後の接合部の腐食生成に関する原因を研究する報告などは既に公知であるが、本発明に示す金−アルミによる金属間化合物の生成面積に着目した接合信頼性を示す報告は全くなく、非特許文献１に示される封止材中に含有されるＢｒ系化合物を含有しない封止材料においても、同様の高温保管不良が発生するものであった。
特開平５−２４３３０８号公報（第２〜５頁） 特開平１０−１２６７０号公報（第２〜１１頁） 特開平９−３６１６９号公報（第２〜１１頁） 大野恭秀、清水勲著「Ａｕ−Ａｌ接合部の信頼性におよぼす樹脂封止の影響」溶接学会論文集第１５巻第２号ｐ．３８３−３８８（１９９７年） 大野恭秀、清水勲、今里英一郎著「Ａｕ−Ａｌ接合部のＢｒ腐食の温度依存性」溶接学会論文集第１６巻第３号ｐ．３１２−３１８（１９９８年）
本発明は従来の金線とアルミパッド部の接合部における電気的導通信頼性の問題点を解決するためになされたもので、その目的とするところは電気的特性および他の諸特性を劣化させることなく、耐熱処理後の電気的導通信頼性が著しく優れた半導体装置を提供することにある。
本発明は、
〔１〕半導体素子と外部端子との接合方法として金線を用い、半導体素子と外部端子につながるリードフレームまたはパターン加工された配線基板とを半導体封止用樹脂組成物により封止してなる半導体装置において、半導体素子と金線との接合面に金・アルミによる合金層が形成される面積が全接合面積の２０％以上であり、前記半導体封止用樹脂組成物が一般式（１）で表されるエポキシ樹脂、及び硬化剤を含有し、該硬化剤が一般式（２）で表されるフェノール樹脂硬化剤のみからなり、且つ難燃剤を含有しないエポキシ樹脂組成物であることを特徴とする半導体装置、
である。
（ｎは平均値で、１〜５の正数である。）
（ｎは平均値で、１〜５の正数である。）
本発明の方法に従うと、半導体素子の電気的導通のために行う金線による半導体素子と外部端子に通ずるリ−ドフレームまたはパターン加工された配線基板との接合信頼性を飛躍的に向上させること、すなわち従来の欠陥である高温での加熱処理後におけるボンディングパッド部の接合信頼性の向上が図られるので半導体装置として好適である。
本発明は、封止材料が接合部の信頼性に影響を与えることを示す研究である非特許文献１に示されている、Ｂｒ系化合物を含有しない封止材料においても、高温保管不良が発生することを見いだし、その原因を追及した結果、金−アルミによる接合部の金属間化合物の生成比率が異なると、後の高温保管特性に多大な影響を与えることを見いだし、発明に至ったものである。即ち、本発明は、半導体素子と外部端子との接合方法として金線を用い、半導体素子と外部端子につながるリ−ドフレームまたはパターン加工された配線基板とを半導体封止用樹脂組成物により封止してなる半導体装置において、半導体素子と金線との接合面に金・アルミによる合金層が形成される面積を全接合面積の２０％以上とすることにより、半導体素子の電気的導通のために行う金線による半導体素子と外部端子に通ずるリ−ドフレームまたはパターン加工された配線基板との接合信頼性を飛躍的に向上させること、すなわち従来の欠陥である高温での加熱処理後におけるボンディングパッド部の接合信頼性の向上が図られるのものである。
以下、本発明について詳細に説明する。
本発明において用いられる金線は、通常半導体装置製造用として市販されている金線であればその化学的組成、硬さ、径などを問われるものではない。また、半導体素子のボンディングパッドに関してはアルミ主体の組成であれば、その化学的組成、形状、厚みなどを問われるものではなく、金線とボンディングパッド部の接合において金とアルミの合金の生成が接合面積全体に対し面積比で２０％以上であればよい。
接合部の面積比は、下記の方法により算出できる。金線とアルミパッド部をワイヤーボンディング装置にて接合した後、アルカリ水溶液中に浸漬し、ボンディングパッド部のアルミを溶解、除去する。その後、接合面を観察し、接合面積に対する金・アルミ合金層の面積を画像解析装置により判別し面積比を計算する。
この比率が下限値未満であると半導体装置としての耐熱信頼性が著しく劣り半導体装置としての動作異常や導通不良が発生する。また、この比率は、更に高い信頼性を得ようとするならば５０％以上が望ましい。
金線とボンディングパッドの接合部における接合面積全体に対する金−アルミ合金の面積比は、接合時における温度、荷重、超音波パワー、超音波時間等のボンディング条件を調整することにより、上記範囲内に調整することができる。
本発明に用いる半導体封止用樹脂組成物には、ハロゲン系の難燃剤を意図的に含有しないことが望ましく、その理由は接合部の耐熱信頼性を高めるためである。本発明で使用可能な難燃剤としては、臭素および塩素に代表されるハロゲン元素をその主構造に意図的に含有していない難燃剤であり、具体的には金属酸化物、金属水酸化物、リン系難燃剤、窒素系難燃剤、およびリン・窒素による複合系難燃剤があげられ、それらを組み合わせて使用しても差し支えない。半導体封止用樹脂組成物の樹脂成分は種類を限定するものではないが、その中でも耐湿信頼性、リフロー耐熱性を考慮するとエポキシ樹脂による組成物が望ましく、更に耐熱信頼性の向上および環境問題を考慮すると、上記のハロゲン元素を含有しない難燃剤をも含有しないことがより望ましい。
ハロゲン元素を含有しない難燃剤をも含有せずに、良好な難燃性を得るためには、前記半導体封止用樹脂組成物の樹脂成分が、一般式（１）で表されるエポキシ樹脂、及び／又は一般式（２）で表されるフェノール樹脂硬化剤を含有するものが最も望ましい。
（ｎは平均値で、１〜５の正数である。）
（ｎは平均値で、１〜５の正数である。）
以下に本発明の実施例を示すが、本発明はこれらに限定されるものではない。
［半導体封止用樹脂組成物の製造］
一般式（１）で示されるエポキシ樹脂（軟化点５８℃、エポキシ当量２７２ｇ／ｅｑ）
８．０重量部
一般式（２）で示されるフェノール樹脂（軟化点６５℃、水酸基当量２００ｇ／ｅｑ）
６．０重量部
トリフェニルホスフィン ０．３重量部
溶融球状シリカ（平均粒径２０μｍ） ８５．２重量部
カーボンブラック ０．２重量部
離型剤１： ０．３重量部
をミキサーにて混合し、熱ロールを用いて、１００℃で２分間混練して冷却後粉砕し、半導体封止用樹脂組成物を得た。
実施例１
半導体素子と外部端子との接合方法として金線を用い、半導体素子と外部端子につながるリ−ドフレームを上記記載の半導体封止用樹脂組成物により封止した半導体装置において、半導体素子と金線との接合面に金・アルミによる合金層が形成される面積を全接合面積の９０％とした半導体装置（１６ｐＤＩＰ）を用い下記の信頼性試験を行った。接合面積の特定は確認評価が破壊試験であるため同一組み立て条件の半導体装置を使用した。結果を表１に示す。
実施例２
金線との接合面に金・アルミによる合金層が形成される面積を全接合面積の４０％としたほかは、実施例１と同様にして製造した半導体装置（１６ｐＤＩＰ）を用い、実施例１と同様の信頼性試験を行った。結果を表１に示す。
比較例１
金線との接合面に金・アルミによる合金層が形成される面積を全接合面積の１０％としたほかは、実施例１、２と同様にして製造した半導体装置（１６ｐＤＩＰ）を用い、実施例１、２と同様の信頼性試験を行った。結果を表１に示す。
信頼性試験方法
高温保管試験１
下記の条件で、高温保管処理した後の抵抗電流値を測定し、高温保管処理前の初期段階の測定値に対し１．２倍を越えた抵抗値を示したものを不合格と判定した。
評価数はｎ＝１０とし不良率は評価母数に対する不良数を百分率表示した。
処理条件：１７５℃ １０００ｈｒ放置
高温保管試験２
高温保管試験１を実施後の半導体装置を、パッケージ開封器を用いて開封する。開封後、ワイヤプルテスターによって金線とボンディングパッド部の接合強度を測定した。測定するワイヤー数は５０本以上とし、接合強度４ｇ以下が２０％を越える発生率で且つ金線とアルミパッド部の界面で破壊するモードを不良と判定した。
本発明の方法に従うと、半導体素子の電気的導通のために行う金線による半導体素子と外部端子に通ずるリ−ドフレームまたはパターン加工された配線基板との接合信頼性を飛躍的に向上させること、すなわち従来の欠陥である高温での加熱処理後におけるボンディングパッド部の接合信頼性の向上が図られるので、本発明は金線とアルミパッドによる電気的接合を有する半導体装置全般用として好適である。
ボンディングパッド部の接合事例を示す垂直断面写真である。 高温保管試験１を実施後のボンディングパッド部の接合事例（不良）を示す垂直断面写真である。 アルカリ溶液によってアルミを溶解、除去させた接部の裏面写真である。
符号の説明
１ 金線
２ 半導体封止用樹脂組成物の硬化物
３ 半導体素子
４ 金−アルミ合金部
５ ボイド
６ 腐食
７ クラック
８ 金
９ 金・アルミ合金部

Claims (1)

  1. 半導体素子と外部端子との接合方法として金線を用い、半導体素子と外部端子につながるリードフレームまたはパターン加工された配線基板とを半導体封止用樹脂組成物により封止してなる半導体装置において、半導体素子と金線との接合面に金・アルミによる合金層が形成される面積が全接合面積の２０％以上であり、前記半導体封止用樹脂組成物が一般式（１）で表されるエポキシ樹脂、及び硬化剤を含有し、該硬化剤が一般式（２）で表されるフェノール樹脂硬化剤のみからなり、且つ難燃剤を含有しないエポキシ樹脂組成物であることを特徴とする半導体装置。
    （ｎは平均値で、１〜５の正数である。）
    （ｎは平均値で、１〜５の正数である。）
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Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05243308A (ja) * 1991-11-20 1993-09-21 Nippon Steel Corp 金細線の接合方法と半導体装置
JP2001072743A (ja) * 1999-09-02 2001-03-21 Nitto Denko Corp 半導体封止用エポキシ樹脂組成物およびそれを用いた半導体装置
JP2003082197A (ja) * 2001-09-17 2003-03-19 Sumitomo Bakelite Co Ltd エポキシ樹脂組成物及び半導体装置
JP2003246847A (ja) * 2002-02-25 2003-09-05 Sumitomo Bakelite Co Ltd 難燃性エポキシ樹脂組成物およびそれを用いた半導体封止材料並びに半導体装置
JP2003252961A (ja) * 2002-03-05 2003-09-10 Toray Ind Inc エポキシ系樹脂組成物およびそれを用いた半導体装置
JP2003258022A (ja) * 2002-03-07 2003-09-12 Hitachi Ltd 半導体装置およびその製造方法
JP2003292569A (ja) * 2002-03-29 2003-10-15 Sumitomo Bakelite Co Ltd エポキシ樹脂組成物及び半導体装置
JP2004128184A (ja) * 2002-10-02 2004-04-22 Nippon Steel Corp 半導体用金ボンディングワイヤ

Patent Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05243308A (ja) * 1991-11-20 1993-09-21 Nippon Steel Corp 金細線の接合方法と半導体装置
JP2001072743A (ja) * 1999-09-02 2001-03-21 Nitto Denko Corp 半導体封止用エポキシ樹脂組成物およびそれを用いた半導体装置
JP2003082197A (ja) * 2001-09-17 2003-03-19 Sumitomo Bakelite Co Ltd エポキシ樹脂組成物及び半導体装置
JP2003246847A (ja) * 2002-02-25 2003-09-05 Sumitomo Bakelite Co Ltd 難燃性エポキシ樹脂組成物およびそれを用いた半導体封止材料並びに半導体装置
JP2003252961A (ja) * 2002-03-05 2003-09-10 Toray Ind Inc エポキシ系樹脂組成物およびそれを用いた半導体装置
JP2003258022A (ja) * 2002-03-07 2003-09-12 Hitachi Ltd 半導体装置およびその製造方法
JP2003292569A (ja) * 2002-03-29 2003-10-15 Sumitomo Bakelite Co Ltd エポキシ樹脂組成物及び半導体装置
JP2004128184A (ja) * 2002-10-02 2004-04-22 Nippon Steel Corp 半導体用金ボンディングワイヤ

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