TWI476266B - 異方性導電膏 - Google Patents

異方性導電膏 Download PDF

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TWI476266B
TWI476266B TW097109587A TW97109587A TWI476266B TW I476266 B TWI476266 B TW I476266B TW 097109587 A TW097109587 A TW 097109587A TW 97109587 A TW97109587 A TW 97109587A TW I476266 B TWI476266 B TW I476266B
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Taiwan
Prior art keywords
conductive paste
anisotropic conductive
solder particles
particle size
average particle
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TW097109587A
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English (en)
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TW200902673A (en
Inventor
Tadahiko Sakai
Hideki Eifuku
Yukinari Abe
Satomi Kawamoto
Kaori Matsumura
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Namics Corp
Panasonic Corp
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Publication of TW200902673A publication Critical patent/TW200902673A/zh
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Publication of TWI476266B publication Critical patent/TWI476266B/zh

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    • H05K3/32—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits
    • H05K3/321—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits by conductive adhesives
    • H05K3/323—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits by conductive adhesives by applying an anisotropic conductive adhesive layer over an array of pads
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Description

異方性導電膏
本發明係有關異方性導電膏、使用該異方性導電膏之連接方法、以及包含使用該異方性導電膏之連接的半導體裝置。
近年來，以電子機器之更進一步地輕薄短小化以及高頻率化為背景，將半導體晶片直接搭載於印刷配線板之覆晶(flip chip)安裝係受到注目。其中，尤以在晶片的端子設置凸塊(bump)，使其與配線板上的電極對向，並於兩者間隔介異方性導電膏進行熱壓著的方式，受到熱衷地研究。
因異方性導電膏在使用步驟中之短時間化的要求，而使用環氧－咪唑硬化系之樹脂(例如參照專利文獻1)。
可是，在使用經使用有環氧－咪唑硬化系樹脂之異方性導電膏時，吸水率高，尤其是膏(paste)之硬化物在高溫高濕下會吸濕而膨脹，有容易引起電性連接不良的問題。
因此，提案有藉由選擇室溫下浸漬於水中時之吸水率低的原料成分來防止因吸濕所造成的不良(例如參照專利文獻2)。
可是，由於環氧樹脂之硬化而產生羥基使吸水率上升，故只以原料成分之選擇來減低吸水率係為困難。
[專利文獻1]日本國特開平09－310057號公報[專利文獻2]日本國特開2003－176473號公報
本發明之目的係解決上述問題，獲得即使在高溫高濕下亦可進行信賴性高之電性連接的異方性導電膏。
本發明人等係經努力檢討的結果，發現使用焊料粒子作為異方性導電膏之導電粒子，再調配具有平均粒子尺寸較焊料粒子之平均粒子尺寸小的絕緣性無機填料之方式，係在即使於高溫高濕下亦可維持良好之電性連接的方面為非常有效，而得以完成本發明。
亦即，本發明係為一種異方性導電膏，其包含環氧樹脂、咪唑化合物、焊料粒子、以及絕緣性無機填料，其中，絕緣性無機填料的平均粒子尺寸係較焊料粒子的平均粒子尺寸小。在使用本發明之異方性導電膏時，推測在電子機器的安裝中，膏中之焊料粒子係與欲連接之對象(例如，晶片端子之凸塊以及配線板上之電極)合金化，結果使兩者的連接變強固並維持良好之電性連接，且藉由併用絕緣性無機填料而可謀求吸濕性之降低。
根據本發明，可提供一種異方性導電膏，其即使在高溫高濕下亦可進行信賴性高之電性連接。此外，可提供一種半導體裝置，其使用有該異方性導電膏，並具有即使在高溫高濕下亦為高信賴度之電性連接。再者，根據本發明之異方性導電膏，可在短時間進行良好之電性連接，亦可謀求生產性提升。
本發明係為一種異方性導電膏，其包含環氧樹脂、咪唑化合物、焊料粒子、以及絕緣性無機填料，其中，絕緣性無機填料的平均粒子尺寸係較焊料粒子的平均粒子尺寸小。
本發明中之環氧樹脂並非為特別限定者，可使用公知者。
就環氧樹脂而言，可舉出公知者，只要是在分子中具有至少2個環氧鍵結者，於分子構造、分子量等便無特別限制，但以環氧樹脂本身在常溫下為液狀為佳。就具體例而言，可舉出二環戊二烯型、甲酚酚醛(cresol novolac)型、酚酚醛型、雙酚型(雙酚A型、雙酚F型)、聯苯型等各種環氧樹脂。環氧樹脂係可單獨或併用2種以上。
咪唑化合物並無特別限定，可使用公知者。就具體例而言，可舉出2－甲基咪唑、2－乙基－4－甲基咪唑、2－苯基－4－甲基咪唑、以及使其等化合物微膠囊化者等。此等化合物係可單獨或併用2種以上。相對於環氧樹脂100重量份，咪唑化合物係以10至50重量份為佳，較宜為15至30重量份。
本發明之異方性導電膏係含有焊料粒子。焊料粒子係作為導電粒子而發揮功能者。焊料粒子以熔點在100至350℃為佳，較宜為在130至250℃。
就焊料粒子而言，以含Sn合金為佳。在此，含Sn合金係指含有Sn之合金，可舉出Sn－Pb系合金、Sn－Bi系合 金、Sn－Ag－Cu系合金、Sn－Ag系合金、Sn－Cu系合金、Sn－Zn系合金、Sn－Zn－Bi系合金、Sn－Cu－Ni系合金、Sn－Cu－Ni－Ge系合金、Sn－Ag－Cu－Bi系合金、Sn－Ag－In－Bi系合金。亦可使用Sn粒子。
就焊料粒子的形狀而言並無特別限定，可舉出球狀、鱗片狀、針狀、以及不定形等。從膏之作業性的觀點來看，以球狀為佳。
就焊料粒子之平均粒子尺寸而言，可舉出0.5至50μm。一般而言，在異方性導電膏中，為了避免導電粒子於安裝時熔融．變形而產生在壓著方向以外的導通，故使用較高熔點之導電粒子。焊料粒子係通常熔點較此等為低，但藉由使平均粒子尺寸在上述範圍內，而可容易地保持壓著方向以外之絕緣性。平均粒子尺寸係宜為1至40μm，較宜為3至30μm。在本說明書中，所謂平均粒子尺寸係指，在球狀時為粒子徑，鱗片狀時為粒子薄片之長徑，針狀時為長度，不定形時為最長之長度的平均值。
本發明之異方性導電膏，復包含絕緣性無機填料。藉由調配絕緣性無機填料，而可使硬化物之線膨脹係數變小。除此之外，在本發明中，絕緣性無機填料的平均粒子尺寸係較焊料粒子的平均粒子尺寸小，而與單獨調配絕緣性無機填料或焊料粒子的情形相比，藉由兩者之併用，發現硬化物之吸濕性大幅下降，可謀求電性連接之信賴性的提升。
就絕緣性填料而言，可舉出矽石(silica；又稱氧化 矽)、氧化鋁、氮化鋁、碳酸鈣、矽酸鋁、矽酸鎂、碳酸鎂、硫酸鋇、碳酸鋇、硫酸鈣、氫氧化鋁、矽酸鈣、鈦酸鉀、氧化鈦、氧化鋅、碳化矽、氮化矽、氮化硼等。以氧化矽、氧化鋁、以及氮化鋁為佳。
從吸濕性降低的觀點來看，尤以矽石為佳。矽石係可使用結晶狀矽石、非結晶狀矽石之任一者，但以非結晶狀矽石為佳。此外雖亦可使用熔融矽石、煙矽石(fumed silica)、粉碎矽石等，但以熔融矽石為佳。矽石係亦可使用經表面處理者。
絕緣性無機填料的形狀並無特別限定，可舉出球狀、鱗片狀、針狀、以及不定形等。從膏之作業性的觀點來看，以球狀為佳。
就絕緣性無機填料之平均粒子尺寸而言，從作業性的觀點來看，以0.01μm以上者為佳。更宜為0.025至25μm，而尤以超過0.1μm且在10μm以下者為佳。
焊料粒子與絕緣性無機填料之平均粒子尺寸，係可依據以本發明之異方性導電膏連接之連接對象物而適當選擇。在本發明中，絕緣性無機填料具有較焊料粒子小的平均粒子尺寸。例如，在使基板彼此互相連接時，以焊料粒子之平均粒子尺寸為20至30μm，並且絕緣性無機填料之平均粒子尺寸為超過0.1μm且在10μm以下而為佳；在覆晶安裝中，使晶片與電極連接時，焊料粒子之平均粒子尺寸為3至7μm，並且絕緣性無機填料之平均粒子尺寸為超過0.1μm且在10μm以下。另外，藉由使焊料粒子之平均 粒子尺寸成為在絕緣性無機填料之最大平均粒子尺寸以上，而可使連接性變得更加確實。
從異方性的觀點來看，相對於環氧樹脂100重量份，焊料粒子係以5至900重量份為佳，較宜為40至650重量份，更宜為50至300重量份。
從信賴性以及膏之作業性的觀點來看，絕緣性無機填料係以在異方性導電膏中為2.5至35重量%為佳。
在本發明之異方性導電膏中，可在不損及本發明之效果的範圍內，調配其他硬化劑、導電粒子，此外，亦可調配矽烷耦合劑、密著性賦予劑、調平劑、界面活性劑、消泡劑、黏度調整劑、搖變性調整劑、應力調整劑、耐熱安定劑、耐光安定劑、阻燃劑、表面改質劑、防鏽劑、著色劑、分散劑、抗靜電劑、無機纖維、離子阱(ion trap)劑、內部離型劑、敏化劑等添加劑。
本發明之異方性導電膏的製造方法並無特別限定，例如可藉由在擂潰機、球磨機、三輥研磨機、迴轉式混合機、二軸混合機等各種混合機中投入、混合各成分而製造。
從塗佈安定性、塗出安定性的觀點來看，本發明之異方性導電膏係以黏度(25℃、HBT型黏度計、回轉數50rpm)為約1至150Pa．s為佳。
從本發明之異方性導電膏的示差掃描熱析曲線求得之最大發熱尖峰溫度，係以較從焊料粒子的示差掃描熱析曲線求得之最大吸熱尖峰溫度高為佳。在此，示差掃描熱析係於30至300℃的溫度範圍以每分鐘500℃等速升溫。 若為如此之關係，則在使用異方性導電膏時，由於藉由焊料粒子的熔融，而形成焊料粒子間之電性連接、以及與欲與焊料粒子連接之對象的合金化所造成的電性連接後，環氧樹脂會硬化，故電性連接變得更為確實。
相對於從本發明之異方性導電膏的示差掃描熱析曲線所求得之總發熱量，在焊料粒子之最大吸熱尖峰溫度以下的溫度之發熱量係以20%以下為佳，在此，示差掃描熱析係於30至300℃的溫度範圍以每分鐘500℃等速升溫。若為如此之關係，則在使用異方性導電膏時，在焊料粒子熔融前，環氧樹脂不會實質性地硬化，並由於藉由焊料粒子的熔融，而形成焊料粒子間之電性連接，以及與欲與焊料粒子連接之對象的合金化所造成的電性連接後，環氧樹脂會硬化，故電性連接變得更為確實。
本發明之異方性導電膏係可使用於覆晶安裝中之電性連接。例如，除了晶片端子之凸塊與配線板上之電極的連接之外，還可應用在電極與電極的連接、基板與基板的連接，而在半導體裝置之製造中為有用。尤其，若連接對象之凸塊或電極表面之材質為Au、Cu、或焊料，則容易與膏中之焊料粒子合金化，例如可在5秒以下之短時間內容易地獲得強固的連接，在生產性方面亦為優秀。順帶一提，以往的異方性導電膏為了電性連接，必須使膏中之樹脂硬化，因此至少需要5秒左右。
舉例來說，在晶片的端子設置凸塊，使其與配線板上的電極對向，在兩者之間隔介本發明之異方性導電膏而可 使其熱壓合。更具體而言，可將本發明之異方性導電膏以塗布器(dispenser)等塗佈在配線板上的電極上，之後，使晶片端子之凸塊成為與電極對向，並從晶片的上方以熱板加壓，而將晶片熱壓合至配線板。可令熱板的溫度為150至400℃，壓力為1g/chip至50kg/chip，時間為0.1至5秒。之後，移除熱板並維持在100至250℃、1至180分鐘，使異方性導電膏經後硬化(postcure)而可完成連接。
(實施例)
以下，雖藉由實施例詳細說明本發明，但本發明並非由此等限制者。標示若無特別註明，係為重量份。
依照下述表1、表2之調配，在室溫下以輥磨機混練成分2小時，調製實施例1至7、以及比較例1至8的異方性導電膏，從而獲得實施例以及比較例之各異方性導電膏。
焊料粒子1：Sn－Bi合金(Sn42：Bi58)，球狀，平均粒子尺寸5μm 焊料粒子2：Sn－Ag－Cu合金(Sn96.5：Ag3.0：Cu0.5)，球狀，平均粒子尺寸5μm 焊料粒子3：Sn－Bi合金(Sn42：Bi58)，球狀，平均粒子尺寸10μm 導電粒子1：Ni粉，球狀，平均粒子尺寸5μm 樹脂核鍍金粒子：在平均粒徑5μm之橡膠粒子表面鍍Ni與Au者。 矽石填料1：球狀熔融矽石，平均粒子尺寸0.5μm，BET 比表面積6m2 /g，最大粒子尺寸5μm 矽石填料2：球狀熔融矽石，平均粒子尺寸6μm，最大粒子尺寸25μm 矽烷耦合劑：γ－環氧丙氧基丙基三甲氧基矽烷 錪鹽：(4－甲基苯基)[4－(2－甲基丙基)苯基]－六氟磷酸錪(1－)與碳酸丙烯酯之3：1的混合物 芳族胺：二胺基二乙基二苯基甲烷 2MAOK：2,4－二胺基－6－[2'－甲基咪唑基－(1')]－乙基－s－三異三聚氰酸加成物
[安裝樣品之製造]
用於評估之安裝樣品係以如下的方式製造。
晶片：9.6mm×9.6mm。由凸塊徑85μm、高度70μm之Au釘頭凸塊(stud bump)以節距150μm配置240個為周緣狀(peripheral)的IC晶片。
配線板：在對應晶片凸塊之位置具有鍍Ni/Au之銅電極的FR－4基板。
將配線板以150℃、30分鐘的條件乾燥後，使用塗布器(岩下Engineering公司製AD9000)將各異方性導電膏20mg塗佈至對應晶片之9.6mm×9.6mm的部分。之後，使晶片之凸塊成為與電極對向，從晶片的上方以熱板加壓，而可將晶片熱壓合(熱壓合的條件為溫度270℃、壓力12 kg/chip、1秒)至配線板，接著移除熱板並進行後硬化(溫度150℃，時間30分鐘)。比較例8之安裝樣品係以溫度 270℃、壓力12 kg/chip、15秒的條件進行熱壓合。
[評估]
1.合金之形成
試驗1：從配線板剝下晶片，以金屬顯微鏡確認在電極是否有焊料熔融的痕跡。
試驗2：以SEM(掃描式電子顯微鏡)觀察安裝樣品的剖面，確認焊料是否存在於凸塊－電極間。
在試驗1以及2中，確認到焊料之存在時為○，其他情形為×。將結果顯示於表1與表2。
2.連接性(電阻值試驗)
以數位萬用表(digital multimeter)測定電阻值。取得連接的情形為○，開路(open)不良的情形為×。將結果顯示於表1與表2。
3.接著強度
以萬能試驗機測定晶片－配線板間的剪斷強度，以作為接著強度。將起始值與PCT試驗(條件：121℃，2大氣壓(飽和)，20小時)後的值顯示於表1、表2。
4.吸水率
藉由測定上述PCT試驗後之重量變化而測定。吸水率(%)係由(PCT試驗後之安裝樣品的重量－起始之安裝樣品的重量)/(起始之安裝樣品的重量)×100而求得。將結果顯示於表1與表2。
5.示差掃描熱析
將實施例1與比較例6之異方性導電膏以及實施例1 與比較例6所使用之焊料粒子5mg，使用Perkin Elmer公司製之示差掃描熱析裝置(型號：Pyrisl)，於30至300℃的溫度範圍以每分鐘500℃等速升溫而獲得示差掃描熱析曲線。將結果顯示於第1圖。
實施例1至7中，雖然熱壓著時間為短至1秒的時間，卻仍在凸塊與電極間形成合金，獲得良好之電性連接。此外，即使在高溫高濕下，亦保有接著強度。另一方面，不含矽石填料之比較例1係吸水率大，在高溫高濕下連接強度會下降。不含焊料粒子之比較例2至4係無法獲得良好之電性連接。矽石填料之平均粒子尺寸較焊料粒子之平均粒子尺寸大的比較例5，係無法獲得良好之電性連接。在使用咪唑化合物以外之硬化劑的比較例6與7，係無法獲得良好之電性連接。尤其是比較例7，異方性導電膏沒有硬化，無法進行電性連接、接著強度、以及吸水率之測定。比較例8係針對比較例7而使熱壓合時間延長之例，但即使如此亦無法獲得良好的電性連接。
如第1圖所示，從實施例1之示差掃描熱析曲線A求得之最大發熱尖峰溫度a、與從比較例6之示差掃描熱析曲線B求得之最大發熱尖峰溫度b，係分別為170℃，128℃。相對的，從焊料粒子1之示差掃描熱析曲線C求得之最大吸熱尖峰溫度c，係為145℃。可推測在實施例1中，由於在焊料粒子熔融後，環氧樹脂會硬化，故可獲得良好的電性連接。相對於此，可推測在比較例6中，由於環氧樹脂在焊料粒子熔融前就已經硬化，故無法獲得良好的電 性連接。接著，在實施例1之示差掃描熱析曲線中，相對於對基線L顯示發熱的135至220℃之總發熱量，在焊料粒子之最大吸熱尖峰溫度c以下之135至145℃的發熱量為9.3%。藉此，可推測由於在焊料粒子熔融前，環氧樹脂不會實質性地硬化，而在焊料粒子熔融後，環氧樹脂硬化，故可獲得良好的電性連接。
(產業上之可利用性)
根據本發明可提供一種異方性導電膏，其係在覆晶安裝(尤其是在半導體晶片的端子設置凸塊，使其與配線板上的電極對向，並於兩者間隔介異方性導電膏而進行熱壓合的方式)中，即使在高溫高濕下亦可進行高信賴度之電性連接。此外，可提供一種半導體裝置，其使用有該異方性導電膏，並具有即使在高溫高濕下亦為高信賴度之電性連接。再者，根據本發明之異方性導電膏，可在短時間進行良好之電性連接，亦可謀求生產性提升。
第1圖中，A係表示實施例1之示差掃描熱析曲線，L係其基線。a係表示最大發熱尖峰溫度。B係表示比較例6之示差掃描熱析曲線，b係表示最大發熱尖峰溫度。C係表示實施例1以及比較例6所使用的焊料粒子之示差掃描熱析曲線，c係表示最大吸熱尖峰溫度。

Claims (11)

  1. 一種異方性導電膏，係包含環氧樹脂、咪唑化合物、焊料粒子、以及絕緣性無機填料，其中，絕緣性無機填料的平均粒子尺寸係較焊料粒子的平均粒子尺寸小，其中，相對於從異方性導電膏之示差掃描熱析曲線求得之總發熱量，在焊料粒子之最大吸熱尖峰溫度以下的溫度之發熱量係為20%以下，在此，示差掃描熱析係於30至300℃的溫度範圍以每分鐘500℃等速升溫，其中，相對於環氧樹脂100重量份，咪唑化合物係為10至50重量份。
  2. 如申請專利範圍第1項之異方性導電膏，其中，相對於環氧樹脂100重量份，焊料粒子係為5至900重量份。
  3. 如申請專利範圍第1或2項之異方性導電膏，其中，從異方性導電膏之示差掃描熱析曲線求得之最大發熱尖峰溫度係較從焊料粒子之示差掃描熱析曲線求得之最大吸熱尖峰溫度高，在此，示差掃描熱析係於30至300℃的溫度範圍以每分鐘500℃等速升溫。
  4. 如申請專利範圍第1或2項之異方性導電膏，其中，焊料粒子係為含Sn合金。
  5. 如申請專利範圍第1或2項之異方性導電膏，其中，焊料粒子之平均粒子尺寸係為0.5至50μm。
  6. 如申請專利範圍第1或2項之異方性導電膏，其中，絕緣性無機填料係為矽石(silica)。
  7. 如申請專利範圍第1或2項之異方性導電膏，其中，絕緣性無機填料之平均粒子尺寸係為0.025至25μm。
  8. 如申請專利範圍第1或2項之異方性導電膏，其中，異方性導電膏中之絕緣性無機填料係為2.5至35重量%。
  9. 一種連接方法，係包含：在電子機器的安裝中，使連接對象物彼此隔介申請專利範圍第1至8項中任一項之異方性導電膏並進行熱壓合。
  10. 如申請專利範圍第9項之連接方法，其中，連接對象物之一方係為晶片之端子的凸塊，另一方係為配線板上之電極。
  11. 一種半導體裝置，係包含使用有申請專利範圍第1至8項中任一項之異方性導電膏的連接。
TW097109587A 2007-03-19 2008-03-19 異方性導電膏 TWI476266B (zh)

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