TW200902673A - Anisotropic conductive paste - Google Patents

Anisotropic conductive paste Download PDF

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Publication number
TW200902673A
TW200902673A TW097109587A TW97109587A TW200902673A TW 200902673 A TW200902673 A TW 200902673A TW 097109587 A TW097109587 A TW 097109587A TW 97109587 A TW97109587 A TW 97109587A TW 200902673 A TW200902673 A TW 200902673A
Authority
TW
Taiwan
Prior art keywords
range
anisotropic conductive
temperature
conductive paste
solder particles
Prior art date
Application number
TW097109587A
Other languages
Chinese (zh)
Other versions
TWI476266B (en
Inventor
Tadahiko Sakai
Hideki Eifuku
Yukinari Abe
Satomi Kawamoto
Kaori Matsumura
Original Assignee
Namics Corp
Matsushita Electric Ind Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Namics Corp, Matsushita Electric Ind Co Ltd filed Critical Namics Corp
Publication of TW200902673A publication Critical patent/TW200902673A/en
Application granted granted Critical
Publication of TWI476266B publication Critical patent/TWI476266B/en

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    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
    • C08L63/00—Compositions of epoxy resins; Compositions of derivatives of epoxy resins
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/30—Assembling printed circuits with electric components, e.g. with resistor
    • H05K3/32—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits
    • H05K3/321—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits by conductive adhesives
    • H05K3/323—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits by conductive adhesives by applying an anisotropic conductive adhesive layer over an array of pads
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
    • C08K5/00—Use of organic ingredients
    • C08K5/16—Nitrogen-containing compounds
    • C08K5/34—Heterocyclic compounds having nitrogen in the ring
    • C08K5/3442—Heterocyclic compounds having nitrogen in the ring having two nitrogen atoms in the ring
    • C08K5/3445—Five-membered rings
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
    • C08K7/00—Use of ingredients characterised by shape
    • C08K7/16—Solid spheres
    • C08K7/18—Solid spheres inorganic
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    • H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
    • H01B1/20—Conductive material dispersed in non-conductive organic material
    • H01B1/22—Conductive material dispersed in non-conductive organic material the conductive material comprising metals or alloys
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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Organic Chemistry (AREA)
  • Health & Medical Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Medicinal Chemistry (AREA)
  • Polymers & Plastics (AREA)
  • Manufacturing & Machinery (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Dispersion Chemistry (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Physics & Mathematics (AREA)
  • Wire Bonding (AREA)
  • Conductive Materials (AREA)
  • Electric Connection Of Electric Components To Printed Circuits (AREA)
  • Compositions Of Macromolecular Compounds (AREA)
  • Epoxy Resins (AREA)
  • Adhesives Or Adhesive Processes (AREA)

Abstract

The present invention provides an anisotropic conductive paste capable of providing electrical connection with high reliability even in high temperature and high humidity, and a semiconductor device containing connections using the anisotropic conductive paste. The anisotropic conductive paste includes epoxy resin, imidazole compound, bonder grains and insulation inorganic filler, wherein the average grain size of the insulation inorganic filler is smaller than the average grain size of the bonder grains.

Description

200902673 九、發明說明： 【發明所屬之技術領域】 使用該異方性導電膏之 導電膏之連接的半導體 本發明係有關異方性導電膏、 連接方法、以及包含使用該異方性 裝置。 【先前技術】 近年來，以電子機器之更進一步地輕薄短小化以及高 頻率化為背景，將半導體晶片直接搭載於印刷配線板之覆 晶σπΡ chip)安裝係受到注目。其中，尤以在w的端子設 置凸塊（bump)，使其與配線板上的電極對向，並於兩 間隔介異方性導電膏進行㈣著的方式，受到熱衷地研究。 ，異方性導電膏在使用步驟中之短時間化的要求，而 使用環氧-咪唑硬化系之樹脂（例如參照專利文獻丨）。 /可是’在使用經使用有環氧-咪唑硬化系樹脂之異方性 導電膏時’吸水率高’尤其是膏（paste)之硬化物在高溫高 濕下會吸濕而膨脹，有容易引起電性連接不良的問題。 因此，提案有藉由選擇室溫下浸潰於水中時之吸水率 低的原料成分來防止因吸濕所造成的不良（例如參照專利 文獻2 )。 可是，由於環氧樹脂之硬化而產生羥基使吸水率上 升故，、以原料成分之選擇來減低吸水率係為困難。 [專利文獻1]曰本國特開平〇9_31〇〇57號公報 [專利文獻2]曰本國特開2〇〇3_176473號公報 【發明内容】 5 320060 200902673 (發明欲解決的課題） 本發明之目的係解決上述問 下亦可進行㈣性古夕^ 〜㉖传即使在高溫高濕 m 電性連接的異方性導電膏。 (解決課題的手段） 电 作為！方j·生二：係二努力檢討的結果’發現使用焊料粒子 作為異方性導電貧之導電粒子： 較焊料粒子之平灼 +均粒子尺寸 传在㈣W 寸小的絕緣性無機填料之方式， 知在即使於咼潘高濕下亦可維持良杯夕士u Α 非常有效，而得以完成本=良好之電性連接的方面為 亦即’本a S月係為一種異方性 脂、咪唑化合物、焊 ^ 包；壤乳樹 〜 粒子、以及絕緣性無機㈣，且中， 、，，巴緣性热機填料的平均粒子尺寸係 尺寸小。在使用本發明之異方性導電暮的平均粒子 器的安裝中，春由 〃、万性蛉電膏時，推測在電子機 曰片^ W中之焊料粒子係與欲連接之對象（例如， 阳片為子之凸塊以及配線板上之 〗如 者的連接變強固並維持良好 ° “化’結果使兩 性無機填料而可謀求==連接，且藉由併用絕緣 (發明的效果） 發明’可提供一種異方性導電膏 :_下亦可進行信賴性高之電性連接。此外，可接：二 半‘體裝置，其使用有該異方性導電客，並且右 高溫高濕下亦為高信賴度之電性連接。： 在 謀求Sr:::可在短時間進行良好之電性連接，亦可 320060 6 200902673 【實施方式】 本I仏為—種異方性 唑化合物、垾料粒 、具包含環氧樹脂、咪 性無機填料的平以及緣性無機填料’其中，絕緣 小。 尺寸仏較焊料粒子的平均粒子尺寸 者 本發明中之環氧樹 F与特別限疋者，可使用公知 ,%乳樹脂而言，可舉出公知 有至少2個環氧鍵結者，於分…“要疋在刀子中具 限制，但以環氧樹脂本身在常分子量等便無特別 而言，可舉出- 在吊/现下為液狀為佳。就具體例 牛、出一核戊二烯型、甲 型、酚酚醛型、雙酚 Ccresolnovolac) 等客藉产条w 雙八型、雙紛F型）、聯苯型 專各種％氧樹脂。環氧 如本型 咪唑卟人从^ τ J早獨或併用2種以上。 化δ物並無特別限定，可 而言，可舉出2_甲基㈣ ：：者。就具體例 甲基味唾、以及使其等化合物微甲基味唾、苯基冰 係可單獨或併用 η囊化者等。此等化合物 味唾化合物係以10至50重：，曰100重-份’ 量份。 里知為佳，較宜為]5至30重200902673 IX. Description of the Invention: [Technical Field] The semiconductor of the present invention relates to an anisotropic conductive paste, a method of connection, and a device comprising the use of the anisotropy. [Prior Art] In recent years, the mounting system for mounting a semiconductor wafer directly on a printed wiring board has been attracting attention in the lighter, thinner, and higher frequency of electronic equipment. Among them, a bump is placed on the terminal of w, and is opposed to the electrode on the wiring board, and is subjected to (four) in the form of two spacer dielectric pastes, and is studied enthusiastically. The anisotropic conductive paste is required to be used for a short period of time in the use step, and an epoxy-imidazole hardening resin is used (for example, refer to the patent document 丨). / However, 'when using an anisotropic conductive paste using an epoxy-imidazole hardening resin, the 'high water absorption rate', especially the hardened paste, will absorb moisture and swell under high temperature and high humidity, which may easily cause Poor electrical connection. Therefore, it has been proposed to prevent defects caused by moisture absorption by selecting a raw material component having a low water absorption rate when immersed in water at room temperature (for example, refer to Patent Document 2). However, since the hydroxyl group is generated by the hardening of the epoxy resin to increase the water absorption rate, it is difficult to reduce the water absorption rate by selecting the raw material component. [Patent Document 1] Japanese Laid-Open Patent Publication No. Hei. No. Hei. No. Hei. No. Hei. No. Hei. Solve the above question can also be carried out (four) sexual ancient eve ^ ~ 26 transmission even in the high temperature and high humidity m electrical connection of the anisotropic conductive paste. (Means for solving the problem) Electric As! Fang j·sheng 2: The result of the second effort review 'I found that the use of solder particles as an anisotropic conductive conductive particle: the method of flat burning of the solder particles + the average particle size transmitted in (4) small insulating insulating inorganic filler, It is known that it is very effective to maintain a good cup even if it is under the high humidity of the pan, and it is very effective to complete this = good electrical connection, that is, 'this a S month is an isotropic lipid, imidazole The average particle size of the compound, the solder package, the seed milk tree, the particles, and the insulating inorganic (four), and the medium, and the barrage heat medium filler are small. In the mounting of the average particle device using the anisotropic conductive crucible of the present invention, it is presumed that the solder particles in the electronic film are connected to the object to be connected (for example, The positive film is a sub-bump and the connection on the wiring board is strengthened and maintained at a good level. As a result, the amphoteric inorganic filler can be obtained by == connection, and by insulation (effect of the invention) invention An anisotropic conductive paste can be provided: _ can also be used for electrical connection with high reliability. In addition, it can be connected to the two-half body device, which uses the anisotropic conductive user and is also under high temperature and high humidity. For the high-reliability electrical connection: In the Sr::: can be a good electrical connection in a short time, can also be 320060 6 200902673 [Embodiment] This I is an isoflavone compound, dip Granules, flat and marginal inorganic fillers comprising epoxy resin and azo-based inorganic fillers, wherein the insulation is small. The size 仏 is smaller than the average particle size of the solder particles, and the epoxy tree F of the present invention and the special limiter can be Use well known, % milk resin For example, it is known that there are at least two epoxy bonds. In the case of "there is a limitation in the knife, the epoxy resin itself is not particularly specific in terms of normal molecular weight, and the like" Now it is better for liquid. For specific cases, bovine, nucleopentadiene type, type A, phenolic phenolic type, bisphenol Ccresolnovolac, etc., such as the production of double-eight, double-type F-type, biphenyl type Specialized in various oxygen resins. Epoxy As this type of imidazolium, from ^ τ J alone or in combination of two or more. The δ substance is not particularly limited, and examples thereof include 2-methyl (tetra):. Specific examples of the methyl scented saliva, and the like, such as a compound such as a micromethyl sulphate or a phenyl sulphate, may be used singly or in combination with η. These compounds have a salivary compound weight of 10 to 50: 曰100 parts by weight to parts by weight. Lizhi is better, preferably 5 to 30 weight

本發明之異方性導雷客作人士 L 作為墓+ + ’T、3有焊料粒子。焊料粒子係 作為V電粒卞而發揮功能者 丁打 為佳，較宜為在】3G至觀核子以炫點在_至別 就焊料粒子而言，以含Sn 金係指含有Sn之合金，可舉出/^土。在此，含〜合 J舉出sn-Pb系合金、Sn_Bi系合 320060 7 200902673 二：八§广系合金、如，系合金、Sn-CU系合金、Sn-Zn 系合金、一丨系合金、$一心 使心粒子^❿系合金、如Bi系合金。亦可 鱗片^"^子的形狀而言並無特別限定，可舉出球狀、 以球狀為1以及不定形等。從膏之作業性的觀點來看， 就烊料粒子 5,。―般而言，可舉出0.5至 於安物融·變⑽為了避免導電粒子 較高炼點之！+ / 生在壓者方向以外的導通，故使用 但藉由使=Γ。焊料粒子係通常溶點較此等為低， 著方向以外之嗜緣0寸在上述範圍内’而可容易地保持塵 較宜為3【3Γ 平均粒子尺寸係宜為1至卿m， 指，在球狀時為粒子徑，鱗片；粒:尺寸係 狀時為長度， 月趴^•為粒子溥片之長徑，針 本發明之異：：：為最長之長度的平均值。 由調配絕緣性無機填7 f ’ σ復包含絕緣性無機填料。藉 小。除此之外，在才旅而可使硬化物之線膨脹係數變 尺寸係較烊料粒子：二:子生無機填料的平均粒子 性無機填料或焊料粒寸小:而與單獨調配絕緣 現硬化物之吸涔性+ , 3 )目比，糟由兩者之併用，發 提升。 ^大幅下降’可謀求電性連接之信賴性的 就絕緣性填料而 ° ’可舉出石夕石（si丨ica ; 又稱氧化 320060 200902673 石夕）、氧隸、氮仙、碳_ 、㈣鎂、碳酸鎮、 硫酸鋇、碳酸鋇、硫_、氫氧化链、儀、鈦酸鉀、 氧化鈦、氧化鋅、碳切、氮切、氮化㈣。以氧化石夕、 氧化鋁 '以及氮化鋁為佳。 從吸濕性降低的觀點來看，尤以石夕石為佳。石夕石係可 使用結晶狀石夕石、非結晶狀石夕石之任—者，但以非結晶狀 =佳。此外雖亦可使用炫融石夕石、煙石夕石_ 石等’但—石為佳，係亦可使 鱗二 球狀、 以球狀為佳。 0之作業性的觀點來看， # ^絕緣性無機填料之平均粒子尺寸而言，從作業性的 以__以上者為佳。更宜為〇 〇25至25_， 而尤以超過〇·1μιη且在1〇μιη以下者為佳。 據以與絕緣性無機填料之平均好尺寸，係可依 方性導電膏連接之連接對象物而適當選 :粒明中’絕緣性無機填料具有較焊料粒子小的平 子 牛例如’在使基板彼此互相連接時，以焊料粒 平均：子為20至3。_，並且絕緣性無機填料之 尺寸為超過〇加且在10_以下而為佳；在覆 ;;為2;使晶片與電極連接時，焊料粒子之平均粒子尺 ^ 〇 J Mm ’亚且絕緣性無機填料之平均粒子尺寸為超 且在]〇_以下。另外’藉由使焊料粒子之平均 320060 9 200902673 粒子尺寸成為在絕緣性無 — 上，而可使連接性變得更加確實、。之最大平均粒子尺寸以 從異方性的觀點來看，相對 焊料粒子係以5至900重量份 '衣乳树知】00重量份， 份，更宜為50至300重量份。’ 土，較宜為40至650重量 從信賴性以及膏之作業性 料係以在異方性導電春 點來看，絕緣性無機填 在本發明之異方二至35重量%為佳。 果的範圍内，調配其他:二中導=不損及本發明之效 配石夕垸輕合劑、密著性賦 2子，此外，亦可調 泡劑、黏度調整劑、搖變性，整:則、界面活性劑、消 定劑、耐光$ — 凋整蜊、應力調整劑、耐熱安 町九文疋劑 '阻燃劑、 劑、分今夠、面改質劑、防鏽劑、著色 内部離=靜電劑、無機纖維、離子wap)劑、 円邙離型劑、敏化劑等添加劑。 PJ 4 如可，由:二：方14 ‘电膏的製造方法並無特別限定，例 二轴'機、球磨機研磨機、迴轉式混合機、 轴=㈣種混合機中投入、混合各成分而製造。 方性導性、塗出安定性的觀點來看，本發明之異 〜）為約…⑽·s二咖級度計、回轉數 =本發明之異方性導電f的示差掃描熱析曲線求得 曲c溫度’係以較從焊料粒子的示差掃描熱析 析你:之取A吸熱尖缘溫度高為佳。在此，示差掃描熱 丁、·^至300°C的溫度範圍以每分鐘5〇(rc等速升溫。 320060 10 200902673 ，若為如此之關係，則在使用異方性车 + 料粒子的熔融，而形成焊·早广“，由於藉由焊 盘燁料…Μ 間之電性連接、以及與欲 :、：= 對象的合金化所造成的電性連接後1 乳樹月曰會硬化，故電性連接變得更為確實。 < 相對於從本發明之異方性 線所求得之總發敎量，在㈣W“的不差知描熱析曲 下H之㈣^ 之最大吸熱尖蜂溫度以 的皿度之發熱置係以20%以下為佳，在此， 析係於30至30〇1的，片^ 在此，不差掃描熱 + C的，皿度乾圍以母分鐘5〇〇〇c等 若為如此之關係，則在使用異方性導 = 子的炫融’而形成焊料二並由於藉由焊料粒 J〜风烊科粒子間之電性連接， ’:：子連接之對象的合金化所造成的電性連接後，、‘氧二 月曰會硬化，故電性連接變得更為確實。 、乳树 ^發明之異純導電膏係可使料覆晶安裝 例如’除了晶片端子之凸塊與配線板上之電極= 纟’還可應用在電極與電極的連接、基板盥義柘的 ^接’而在半導體裝置之製造中為有用。尤其若= 象之凸塊或電極表面之材質^如、a ' 、 與膏中之焊料粒子合金化，例如可在5秒以下之^谷易 容易地獲得強固的連接，在生產 且$間内 提’以往的異方性導電膏為了電性連接=::帶-脂硬化，因此至少需要5秒左右。 、β中之樹 舉例來說’在晶片的端子設置凸塊，使t 的電極對向，在兩者之p A 、一 /、配、，表板上 間^本發明之異方性導電膏而可 320〇6〇 11 200902673 使其熱壓合。更具體而s，可將本發明之異方性導電膏以 塗布器（dispenser)等塗佈在配線板上的電極上，之^， 使晶片端子之凸塊成為與電極對向，並從晶片的上方以熱 板加壓，而將晶片熱壓合至配線板。可令熱板的溫度為 至400 C，麼力為]g/chip至5〇kg/chip，時間為〇】至5 秒。之後，移除熱板並維持在]〇〇至25〇〇c、1至1 分鐘， 使異方性¥電膏經後硬化（p〇stcure)而可完成連接。 (貫施例） 以下’雖藉由實施例詳細說明本發明，但本發明並 由此等限制者。標示若#特別t主明，係為重量份。 :…：述表1 5表2之調配’在室温下以輥磨機混練 刀 h 4 ’調製實施例1至7、以及比較例1 5 8 方性莲雷暮 』1主8的異 备 电β ’從而獲得實施例以及比較例之各異方性導電 320060 12 200902673 表1 實施 貫施 實施 實施 實施 實施 實施 交 比較 比較 峨 比較 例1 例2 例3 例4 例5 例6 例7 例1 例2 例3 例4 例5 熱硬化性樹脂：雙酚A 24.9 37.4 12.5 12.5 38.4 24.9 24.9 41.5 24.9 24.9 41.5 24.9 型環氧樹脂（環氧當量 189) 硬化劑：2-苯基-4-曱 5.1 7.7 2.5 2.5 8.7 5.1 5.1 8.5 8.5 5.1 8.5 5.1 基_"圭 導電粒子 焊料粒子1 50.0 25.0 75.0 50.0 50.0 50.0 50.0 焊料粒子2 50.0 焊料粒子3 50.0 導電粒子1 50.0 樹脂核鍵金粒子 50.0 其他 石夕石填料1 20.0 30.0 10.0 35.0 3.0 20.0 20.0 0.0 20.0 20.0 50.0 矽石填料2 20.0 矽烷耦合劑 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 合金之形成 〇 〇 〇 〇 〇 〇 〇 〇 X X X X 接續性(電阻值試驗)[Ω ] 6.9 7.1 6.9 7.2 7.1 7.0 7.1 6.8 X X X X 接著強度[kgf/mm2]初期 3.7 3.6 4.0 3.8 3.4 3.5 3.7 3.2 3.5 3.4 3.5 3.8 PCT 20小時後 3.7 3.0 3.7 3.6 3.4 3.5 3.6 1.2 1.5 1.3 1.5 3.6 吸水率[%] 1.5 2.0 1.1 1.2 2.5 1.5 1.5 3.0 1.7 3.5 3.0 1.5 13 320060 200902673 表2 熱硬化性樹脂：雙 樹脂（環氧當量189) 又 硬化劑 2- 苯基-4-曱基咪唑 3- 乙基-2-羥基甲基氧雜環丁燒 銷鹽 芳族胺 比較例The heterosexual guide of the present invention has a solder particle as a tomb + + 'T, 3. It is preferable that the solder particles function as a V-electrode granule, and it is preferable to use a Sn-containing alloy in the case of a solder powder containing Sn gold. Can be cited / ^ soil. Here, the combination of the Sn-Pb alloy and the Sn_Bi alloy 320060 7 200902673 2: the eight § wide alloy, for example, the alloy, the Sn-CU alloy, the Sn-Zn alloy, the tantalum alloy , $ one heart to make the heart particles ^ alloy, such as Bi alloy. The shape of the scales is not particularly limited, and examples thereof include a spherical shape, a spherical shape of 1 and an indefinite shape. From the viewpoint of the workability of the paste, the particles 5 are extracted. In general, it can be mentioned that 0.5 is suitable for the transformation of the material (10) in order to avoid the conductive particles. + / The conduction is outside the direction of the pressure, so use it but by =. The solder particle system usually has a lower melting point than the above, and the affinity 0 inch outside the direction is within the above range', and the dust can be easily maintained at 3 [3 Γ, the average particle size is preferably 1 to qing m, meaning, In the case of a sphere, it is a particle diameter, a scale; a grain: a size is a length, and a moon is a long diameter of a particle, and the difference of the invention is: the average value of the longest length. The insulating inorganic filler is further contained by blending an insulating inorganic filler 7f'. Borrow small. In addition, in the brigade, the coefficient of linear expansion of the hardened material can be changed to smaller than that of the pigment particles: two: the average particulate inorganic filler of the inorganic inorganic filler or the small size of the solder: The sucking property of the object +, 3) the ratio, the difference between the two, and the promotion. ^Large drop' can be used for the reliability of electrical connection. Insulation fillers can be cited as 'Shi丨shi (also known as oxidation 320060 200902673 Shi Xi), oxygen, nitrogen, carbon _, (4) Magnesium, carbonated town, barium sulfate, barium carbonate, sulfur_, hydroxide chain, instrument, potassium titanate, titanium oxide, zinc oxide, carbon cutting, nitrogen cutting, nitriding (four). It is preferred to use oxidized oxide, alumina, and aluminum nitride. From the viewpoint of the decrease in hygroscopicity, especially Shi Xishi is preferred. The Shi Xishi system can use the crystalline Shi Xi stone, the non-crystalline Shi Xi stone, but it is non-crystalline. In addition, it is also possible to use dazzling stone, stone, stone, stone, stone, etc., but stone is preferred, and the scale may be spherical or spherical. From the viewpoint of workability of 0, the average particle size of the #^ insulating inorganic filler is preferably from __ or more in terms of workability. It is more preferably 〇 25 to 25 _, and particularly preferably 〇 1 μmη and less than 1 〇 μηη. According to the average size of the insulating inorganic filler, it can be appropriately selected according to the connection object to which the conductive paste is connected: the insulating inorganic filler has a smaller size than the solder particles, for example, in the substrate When connected to each other, the average of the solder particles is 20 to 3. _, and the size of the insulating inorganic filler is more than 〇 and is preferably 10_ or less; in the coating; 2; when the wafer is connected to the electrode, the average particle size of the solder particles is MJ Mm ' The average particle size of the inorganic filler is super and below 〇_. In addition, by making the average particle size of the solder particles 320060 9 200902673 non-insulating, the connectivity can be made more reliable. The maximum average particle size is from 00 parts by weight, more preferably from 50 to 300 parts by weight, based on the weight of the solder particles, from 5 to 900 parts by weight of the "milk tree". ‘ soil, preferably 40 to 650 weights. From the reliability and the workability of the paste, it is preferable that the insulating inorganic filler is filled in the anisotropy of the present invention in an amount of two to 35 wt%. Within the scope of the fruit, the other is formulated: the second middle guide = does not damage the effect of the present invention, the Shi Xi 垸 light combination agent, the adhesion property 2, in addition, the foaming agent, the viscosity adjusting agent, the shaking property, and the whole: Then, surfactant, eliminator, light-resistant $ — tidying, stress adjuster, heat-resistant Ancho ninth sputum agent' flame retardant, agent, enough, surface modifier, rust inhibitor, coloring interior From = electrostatic agent, inorganic fiber, ion wap agent, bismuth release agent, sensitizer and other additives. PJ 4 If possible, the method of manufacturing the second: square 14' electric paste is not particularly limited. For example, the two-axis machine, the ball mill grinder, the rotary mixer, and the shaft=(four) type mixers are used to mix and mix the components. Manufacturing. From the viewpoint of square conductivity and coating stability, the difference of the present invention is about... (10)·s two coffee grading meter, the number of revolutions = the differential scanning thermal analysis curve of the anisotropic conductive f of the present invention It is better to scan the heat from the differential scanning of the solder particles. It is better to take the temperature of the A heat-absorbing edge. Here, the temperature range of the differential scanning, from ^ to 300 ° C is 5 每 per minute (rc is equating to a constant temperature. 320060 10 200902673 , if so, the melting of the anisotropic car + material particles is used. And the formation of the welding, the early and the wide", due to the electrical connection between the padding material, and the electrical connection caused by the alloying of the object::: = 1 the milky tree will harden, Therefore, the electrical connection becomes more certain. < With respect to the total amount of hair strands obtained from the anisotropic line of the present invention, the maximum endothermic heat of H (4)^ under (4) W" The temperature of the tip of the bee is preferably less than 20%, and here, the strain is 30 to 30 〇1, and the sheet is here, and the scanning heat + C is not bad. If the relationship between 5 〇〇〇 c and so on is in the relationship, the solder is formed by the use of the anisotropic conduction = sub-fusion and due to the electrical connection between the particles of the solder particles J~ : After the electrical connection caused by the alloying of the sub-joined object, 'Oxygen February will harden, so the electrical connection becomes more certain. The transparent conductive paste can be used for flip chip mounting, for example, 'except for the bumps of the wafer terminals and the electrodes on the wiring board = 纟' can also be applied to the connection of electrodes and electrodes, and the connection of the substrate to the semiconductor It is useful in the manufacture of the device. Especially if the material of the bump or the surface of the electrode is, for example, a ', alloyed with the solder particles in the paste, for example, it is easy to obtain a strong connection in the valley of 5 seconds or less. In the production and in the room, the conventional anisotropic conductive paste is electrically connected =:: tape-lipid hardening, so it takes at least about 5 seconds. The tree in β is exemplified by the fact that the terminal of the wafer is convex. Block, the opposite electrode of t, in the two p A, a /, match, between the table ^ the anisotropic conductive paste of the invention can be 320〇6〇11 200902673 to make it thermocompression. Specifically, the anisotropic conductive paste of the present invention can be applied to the electrodes on the wiring board by a dispenser or the like, so that the bumps of the wafer terminals are opposed to the electrodes, and are from the wafer. The upper part is pressurized with a hot plate, and the wafer is thermocompression bonded to the wiring board to allow the temperature of the hot plate For the 400 C, the force is from [g/chip to 5〇kg/chip, the time is 〇] to 5 seconds. After that, remove the hot plate and maintain it at 25〇〇c, 1 to 1 minute, The heterogeneity of the electric paste can be post-hardened to complete the connection. (Examples) Hereinafter, the present invention will be described in detail by way of examples, but the present invention is not limited thereto. In particular, the main parts are in parts by weight. :...:Table 1 5 Table 2 Preparation 'mixing knife h 4 ' at room temperature with a roll mill h 4 'modulate Examples 1 to 7, and Comparative Example 1 5 8 Square Lotus Thunder 』1 The singularity of the main 8 '' to obtain the anisotropic conductivity of the embodiment and the comparative example 320060 12 200902673 Table 1 Implementation Implementation Implementation Implementation Comparison Comparison 峨 Comparative Example 1 Example 2 Example 3 Example 4 Example 5 cases 6 cases 7 cases 1 cases 2 cases 3 cases 4 cases 5 thermosetting resin: bisphenol A 24.9 37.4 12.5 12.5 38.4 24.9 24.9 41.5 24.9 24.9 41.5 24.9 type epoxy resin (epoxy equivalent 189) Hardener: 2- Phenyl-4-indene 5.1 7.7 2.5 2.5 8.7 5.1 5.1 8.5 8.5 5.1 8.5 5.1 base _" Conductive Particles Solder Particles 1 50.0 25.0 75.0 50.0 50.0 50.0 50.0 Solder Particles 2 50.0 Solder Particles 3 50.0 Conductive Particles 1 50.0 Resin Core Bond Gold Particles 50.0 Other Shi Xi Shi Packing 1 20.0 30.0 10.0 35.0 3.0 20.0 20.0 0.0 20.0 20.0 50.0 Vermiculite Filler 2 20.0 decane coupling agent 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 Formation of alloy 〇〇〇〇〇〇〇〇XXXX continuity (resistance value test) [Ω ] 6.9 7.1 6.9 7.2 7.1 7.0 7.1 6.8 XXXX Next strength [kgf/mm2] Initial 3.7 3.6 4.0 3.8 3.4 3.5 3.7 3.2 3.5 3.4 3.5 3.8 PCT 20 hours later 3.7 3.0 3.7 3.6 3.4 3.5 3.6 1.2 1.5 1.3 1.5 3.6 Water absorption [%] 1.5 2.0 1.1 1.2 2.5 1.5 1.5 3.0 1.7 3.5 3.0 1.5 13 320060 200902673 Table 2 Thermosetting resin: double resin (epoxy equivalent 189) and hardener 2- phenyl-4-mercaptoimidazole 3-ethyl-2-hydroxymethyl oxetane Group amine comparison

5.1 2.45.1 2.4

其他 矽石填料1 矽烷耦合劑 合金之形成 連接性（電阻值試驗）「〇1 Ϊ著強度[kgf/mm2]^ PCT 20小時徭Other vermiculite filler 1 decane couplant alloy formation connectivity (resistance value test) "〇1 Ϊ strength [kgf/mm2]^ PCT 20 hours徭

X X 1.0. 由於未硬化 而無法測定 3. 3T7X X 1.0. Unable to measure due to unhardening 3. 3T7

吸水率[%] 丈干料粒子1 : Sn-Bi合金（Sn42 : Bi58 尺寸5μιη 焊料粒子2 : Sn_Ag心合金（Sn96 5 : :⑽”， 球狀’平均粒子尺寸5 μ m 焊料粒子3 : Sn_Bi合金（Sn42 :⑽），球狀，平均粒子 尺寸〗Ομηι 導電粒子1 : Ni粉，球狀，平均粒子尺寸5_ 樹脂核鍍金粒子：在平均粒徑私 μ心保骖叔子表面鍍Ni 與Au者。 矽石填料1 :球狀熔融矽石’ 卞尺寸 〇.5μιη，BET 無法測定 球狀，平均粒子 320060 14 200902673 比表面積6m2/g，最大粒子尺寸5μηι 矽石填料2 .球狀熔融矽石，平均粒子尺寸6，，最大粒 子尺寸25μπι 石夕院麵合劑：卜環氧丙氧基丙基三曱氧基石夕烷 錤鹽.（4-甲基苯基）[4_(2_甲基丙基）苯基卜六氣碌酸銷（1·) 與碳酸丙烯酯之3 : 1的混合物 ^無月女.一胺基二乙基二苯基甲烧 2^皿：2,4-二胺基_6_[2,_甲基_'唾基_(11)卜乙基小三哄異 二聚氰酸加成物 [安裝樣品之製造] 用於評估之安裝樣品係以如下的方式製造。 晶片：9.6mmx9.6mm。由凸塊徑85μηι、高度7卟也之Water absorption rate [%] Dry material particle 1: Sn-Bi alloy (Sn42: Bi58 size 5μιη solder particles 2: Sn_Ag core alloy (Sn96 5 : :(10)", spherical 'average particle size 5 μ m Solder particles 3 : Sn_Bi Alloy (Sn42:(10)), spherical, average particle size〗 Ομηι Conductive particle 1: Ni powder, spherical, average particle size 5_ Resin core gold-plated particles: Ni-plated and Au-coated on the surface of the average particle size Vermiculite filler 1: spherical molten vermiculite '卞 size 〇.5μιη, BET cannot measure spherical shape, average particle 320060 14 200902673 specific surface area 6m2/g, maximum particle size 5μηι vermiculite filler 2. spherical molten vermiculite, Average particle size 6, the largest particle size 25μπι Shi Xiyuan noodle mixture: p-glycidoxypropyl tridecyloxy oxazide salt. (4-methylphenyl) [4_(2-methylpropyl) a mixture of phenyl b hexahydrate acid (1·) and propylene carbonate 3:1 ^ 无月女. Aminodiethyldiphenylmethyl 2^: 2,4-diamino _6_[2,_Methyl_'salyl-(11)-ethyl succinyl isomeric cyanuric acid adduct [manufacture of mounting samples] for evaluation Line containing the sample wafer manufactured in the following manner:. 9.6mmx9.6mm a bump diameter 85μηι, also the height of 7 porphyrin.

Au釘頭凸塊（stud bump)以節距15〇μιη配置24〇個為周緣 狀（peripheral)的 1C 晶片。 配線板：在對應晶片凸塊之位置具有鍍州/Au之銅電 極的FR-4基板。 將配線板以15CTC、30分鐘的條件乾燥後，使用塗布 器（岩下Engineering公司製AD9000)將各異方性導電膏 2〇mg塗佈至對應晶片之9.6mmx9.6mm的部分。之後，使 晶片之凸塊成為與電極對向，從晶片的上方以熱板加壓， 而可將晶片熱壓合（熱壓合的條件為溫度27〇t、壓力12 kg/chip、1秒）至配線板，接著移除熱板並進行後硬化（溫 度150°C，時帛30分鐘）。比較例8之安裝樣品係以溫度 320060 15 200902673 270°C、壓力12 kg/chip、15秒的條件進行熱壓合。 [評估] ° 1.合金之形成 試驗1:從配線板剝 極是否有焊料熔融的痕跡 試驗2:以SEM (掃描式電子顯微鏡）觀察 的剖面，確認焊料是否存在於凸塊_電極間。 、衣 在試驗1以及2中，確認到焊料之存在時 情形為X。將結果顯示於表丨與表2。 ’、、、 ，/、他 2. 連接性（電阻值試驗） 以數位萬用表（digital multimeter)測定電阻值 接的情形為〇，開路（open)不良的情形 : 表1與表2。 肘、、，。果顯不於 3. 接著強度 以萬能試驗機測定晶片·配線板間 接著強度。將起始值與料驗(條件為 壓（飽和），20小時）後的值顯示於表 大虱 4. 吸水率 衣2。 卜上述PCT試驗後之重量變化而測定。吸水率 樣品的重量）/(起始之安裝樣 起始…、 將結果顯示於與表2。 ）重董）X100而求得。 5. 示差掃描熱析 將實施例1與比較例6之異方性導電膏以及實施例】 320060 200902673 ^比較例6所使用之焊料粒子5叫，使用以他公 司製之示差掃描熱析|置（型號：pyrisi)，於％至剔 =溫度範圍以每分鐘·。c等速升溫而獲得示差掃描熱 析曲線。將結果顯示於第】圖。 實施例1至7中，雖然熱麗著時間為短至^'的時間， 部仍在凸塊與電極間形成合金，獲得良好之電性連接。此 外，即使在高溫高濕下，亦保有接著強度。另一方面，不 ίΓΓΓ之比較例1係吸水率大，在高溫高濕下連接強 度曰下降。不含焊料粒子之比較例2至4係'無法獲得良好 電f連##石填料之平均粒子尺寸較焊料粒子之平均 粒子尺寸大的比㈣"，係無法獲得良好之電性連接。在 化合物以外之硬化劑的比較例6肖7，係無法獲 2之電性連接。尤其是比較们，異方性導電膏沒有 更化，無法進行電性連接、接著強度、以及吸水率之測定。 比較例8係針對比較例7而使熱壓合時間延長之例，但即 使如此亦無法獲得良好的電性連接。 〜圖所示，從實施例！之示差掃描熱析曲線八求 ^取大發熱尖峰溫度3、與從比較例6之示差掃描熱析 、、泉b求得之最大發熱尖锋溫度b，係分別為17代，以 曰相對的，k焊料粒子i之示差掃描熱析曲線c求得之 二大吸熱太峰溫度e，係為145t>c。可推測在實施例】中， 於在焊料粒子㈣後’環氧樹脂會硬化，故可獲得良好 =性連接。相對於此’可推測在比較例6巾，由於環氧 ①月曰在焊料粒子炫融前就已經硬化，故無法獲得良好的電 320060 17 200902673 性連接。接著，在實施例】之示差掃描熱析曲線中，相對 於對基線L顯示發熱的】35至22〇χ：之總發熱量，在焊料 粒子之最大吸熱尖峰溫度c以下之135至14代的㈣量 〜ff，可推測由於在焊料粒子溶融前，環氧樹脂 不曰只貝性地硬而在焊料粒子炼融後，環氧樹脂硬化， 故可獲得良好的電性連接。 (產業上之可利用性） 根據本發明可提供一種異方性導電膏 =其是在半導髓晶片的端子設置― 的電，對向，並於兩者間隔介異方性導電奮而進行㈣合 :方中’即使在高溫高濕下亦可進行高信賴 =此外’可提供-種半導體裝置，其使用有該異方性導 電膏，並具有即傕名古、、拉古、θ ^， ，、刀炫等 同’皿同匕下亦為高信賴度之電性連 接。再者，根據本發明之異方性導 良好之m ”万性導電贫，可在短時間進行 良好之lil連接’亦可謀求生產性提升。 【圖式簡單說明】 “丄：中’ Α係表示實施例1之示差掃描熱析曲線， nl ϋ示最Α發熱尖蜂溫 ό之示差掃描埶杯恥始L〆 如表不比#乂例 ，干H…線，b係表示最大發熱尖峰溫度。C係 以及比較例6所使用的焊料粒子之干差奸 熱析曲線，C係表示最大吸熱尖缘溫度。 差^田 【主要元件符號說明】 益〇 320060 ]8Au stud bumps were arranged with 24 turns of a peripheral 1C wafer at a pitch of 15 μm. Wiring board: An FR-4 substrate having a plated/Au copper electrode at a position corresponding to the wafer bump. After the wiring board was dried at 15 CTC for 30 minutes, 2 〇mg of each anisotropic conductive paste was applied to a portion of the corresponding wafer of 9.6 mm x 9.6 mm using an applicator (AD9000 manufactured by Iwate Engineering Co., Ltd.). Thereafter, the bumps of the wafer are opposed to the electrodes, and the wafer is pressed from above the wafer by hot plates, and the wafer can be thermocompression-bonded (the temperature is 27 〇t, the pressure is 12 kg/chip, 1 second). ) to the wiring board, then remove the hot plate and post-harden (temperature 150 ° C, 帛 30 minutes). The mounting sample of Comparative Example 8 was thermocompression-bonded under the conditions of a temperature of 320060 15 200902673 270 ° C, a pressure of 12 kg/chip, and 15 seconds. [Evaluation] ° 1. Formation of alloy Test 1: Detachment from the wiring board. Trace of solder melting. Test 2: A cross section observed by SEM (scanning electron microscope) to confirm whether or not solder exists between the bumps. In the tests 1 and 2, it was confirmed that the presence of solder was X. The results are shown in Tables and Table 2. ', , , , / , 2. Connection (resistance value test) The digital multimeter is used to measure the resistance value. The case where the connection is 〇, open (open) is not good: Table 1 and Table 2. elbow,,,. It is not obvious. 3. Then, the strength between the wafer and the wiring board was measured by a universal testing machine. The values after the initial value and the test (conditions are pressure (saturation), 20 hours) are shown in the table. 4. Water absorption rate 2. The weight change after the above PCT test was measured. Water absorption rate of the sample) / (starting installation sample start..., the results are shown in Table 2). 5. Differential Scanning Thermal Analysis The anisotropic conductive paste of Example 1 and Comparative Example 6 and Examples 320060 200902673 ^Comparative Example 6 used for solder particles 5, using a differential scanning pyrolysis system made by the company (Model: pyrisi), in % to tick = temperature range per minute. c is isothermally heated to obtain a differential scanning thermal analysis curve. The results are shown in the figure. In Examples 1 to 7, although the heat aging time was as short as ^', the portion was still alloyed between the bump and the electrode, and a good electrical connection was obtained. In addition, the bonding strength is maintained even under high temperature and high humidity. On the other hand, Comparative Example 1 which is not inferior has a large water absorption rate, and the connection strength is lowered under high temperature and high humidity. Comparative Examples 2 to 4, which do not contain solder particles, are incapable of obtaining a good electrical connection. The ratio of the average particle size of the stone filler to the average particle size of the solder particles is (4) ", a good electrical connection cannot be obtained. In Comparative Example 6 of the hardener other than the compound, the electrical connection was not obtained. In particular, in comparison, the anisotropic conductive paste was not improved, and electrical connection, subsequent strength, and water absorption were not measured. Comparative Example 8 is an example in which the thermocompression bonding time was extended for Comparative Example 7, but even in this case, a good electrical connection could not be obtained. ~ Figure shown from the example! The differential scanning calorimetry curve is obtained by taking the large heating peak temperature 3, and the differential heating peak temperature b obtained from the differential scanning of Comparative Example 6, and the maximum heating tip temperature b obtained by the spring b, respectively, is 17 generations, The differential endothermic peak temperature e obtained by the differential scanning calorimetry curve c of the solder particles i is 145t > c. It is presumed that in the examples, the epoxy resin hardens after the solder particles (four), so that a good = sexual connection can be obtained. On the other hand, it is presumed that in the case of Comparative Example 6, since the epoxy enamel was hardened before the solder particles were fused, it was not possible to obtain a good electrical connection. Next, in the differential scanning calorimetry curve of the embodiment, the total calorific value of 35 to 22 Å which shows heat generation to the baseline L is 135 to 14 generations below the maximum endothermic peak temperature c of the solder particles. (4) The amount ff is ff. It is presumed that the epoxy resin is hardened after the solder particles are melted, and the epoxy resin is hardened after the solder particles are fused, so that good electrical connection can be obtained. (Industrial Applicability) According to the present invention, it is possible to provide an anisotropic conductive paste = which is disposed at the terminal of the semi-guided pith chip, and is electrically opposed to each other and is separated by anisotropic conduction. (4) Combine: Fangzhong' can carry out high reliability even under high temperature and high humidity = In addition, it can provide a kind of semiconductor device, which uses the anisotropic conductive paste, and has the instant, ancient, Lagu, θ ^ , ,, knife and the same as the same dish is also a high-reliability electrical connection. Furthermore, according to the present invention, the heterogeneity is good, the m-thin conductivity is poor, and a good lil connection can be performed in a short time. It is also possible to improve productivity. [Simplified Schematic] "丄: 中" The differential scanning calorimetry curve of the first embodiment is shown, and the n1 ϋ indicates the most Α Α 尖 蜂 ό 示 示 示 示 耻 耻 耻 耻 耻 〆 〆 〆 〆 〆 〆 〆 〆 〆 〆 〆 〆 〆 〆 〆 〆 〆 〆 〆 〆 〆 〆 〆 〆 〆 〆 〆 乂 乂 乂The dryness of the solder particles used in the C system and the comparative example 6 is the thermal analysis curve, and the C system indicates the maximum endothermic sharp edge temperature.差^田 [Main component symbol description] 益〇 320060 ]8

Claims (1)

200902673 十、申請專利範圍·· I. 一種異方性導雷暮，> 七人iro ρ 焊㈣早 网係包合裱氧樹脂、咪唑化合物、 坪村粒子、以及絕 填料的平均翁；H、機填科’其中，絕緣性無機 小。 _ "尺寸係較焊料粒子的平均粒子尺寸 2. 如!請專利範圍第1項之異方性導電膏，其中，相對 於％氧樹脂1〇〇重量份，_ 、 份。 里忉坪科粒子係為5至900重量 3· :申請專利範圍第1項或第2項之異方性導電春，复 4. t申：：利：圍第I i 3項中任-項之異方性導電 二^、，從異方性導電膏之示差掃描熱析曲線求得 =發熱尖峰溫度係較從焊料粒子之示差掃描熱析 柄^ 最大吸熱尖峰溫度高，在此，示差掃描熱 巧’τ於30至300〇c的溫度範圍以每分鐘$⑼它等速升 0 、：申請專利範圍第…項中任一項之異方性導電 焉’其中，相對於從異方性導電膏之示差掃描熱析曲 線未得之總發熱量，在焊料粒子之最大吸熱尖峰溫度 以下的溫度之發熱量係為2〇%以下，在此，示差掃描 …析ίτ於〇0至30(TC的溫度範圍以每分鐘5〇(Γ(：等 升溫。 ' 申叫專利範圍第1至5項中任一項之異方性導電 19 320060 200902673 貧’其中’焊料粒子係為含Sn合金。 7.如申明專利範圍第〗至6項中任一項之異方性導電 貧，其中，焊料粒子之平均粒子尺寸係為〇.5至 8」:申請專利範圍第…項中任一項之異方性導電 貧，其巾，絕緣性無機填料係為石夕石（silica)。 毛 9. 利範圍第】i 8項中任—項之異方性 I ;=二，絕緣性無機填料之平均粒子尺寸係為〇.〇25 10. ^申請專利範圍第】至9項中任—項之 性導電…絕緣性無機填料係= 種連接方法’係包含：在電子機器的安裝 之：：物彼此隔介申請專利範圍第1至]〇項中任、 之異方性導電膏並進行熱壓合。 貞中任-項 】2·如申請專利範圍第】]項之連 物之一方俘其中，連接對象 上之電極+的㈣’另―方係為配線板 ]3.—種半導體裝置，係包含使 】〇項t任—項之显 有申5月專利範圍第I至 兵方性導電言的連接。 320060 20200902673 X. The scope of application for patents·· I. An anisotropy-induced thunder, > Seven-person iro ρ welding (4) Early network inclusion of oxygenated resin, imidazole compound, Pingcun particles, and average filler of the filler; H , machine filling section ' Among them, the insulating inorganic is small. _ " Size is the average particle size of the solder particles. 2. For example, please refer to the anisotropic conductive paste of the first item of the patent range, where _ and parts are relative to 1% by weight of the % oxygen resin.忉 忉 科 粒子 粒子 粒子 5 5 5 5 5 5 5 5 : : : : : : : : : : : : : : : : : 粒子 粒子 粒子 粒子 粒子 粒子 粒子 粒子 粒子 粒子 粒子 粒子 粒子 粒子 粒子 粒子 粒子 粒子 粒子 粒子The anisotropic conductivity is determined by the differential scanning pyrolysis curve of the anisotropic conductive paste. = The heating peak temperature is higher than the differential scanning temperature of the solder particles. The maximum endothermic peak temperature is high. Here, the differential scanning is performed. The thermal temperature 'τ is in the temperature range of 30 to 300 〇c at a rate of $(9) per minute. It rises at a constant rate of 0.: The anisotropic conductive 焉 of any one of the patent application scopes... The differential calorific value of the conductive paste is not obtained, and the calorific value of the temperature below the maximum endothermic peak temperature of the solder particles is 2% or less. Here, the differential scanning is performed at 〇0 to 30 ( The temperature range of TC is 5 每 per minute (Γ(:equal temperature rise. 'The patented range of any of items 1 to 5 of the patent range 19 320060 200902673 is poor' where the solder particles are Sn-containing alloys. 7. If the aforesaid patent range is from 〗 〖6 to 6 The average particle size of the solder particles is 〇.5 to 8": the anisotropy of the conductive range of any of the scopes of the patent application, the towel, the insulating inorganic filler is silica. In the range of i], the anisotropy of the term - i; the second, the average particle size of the insulating inorganic filler is 〇.〇25 10. ^ the scope of the patent application] to the nine items Conductive Insulation...Insulating Inorganic Filler = Kind of Connection Method' Contains: In the installation of an electronic device: the object is separated from each other by the anisotropic conductive paste of the patent application range 1 to 并Pressing. 贞中任-item] 2·If one of the items of the patent application scope]] is captured, the electrode on the connection object is (4) 'the other side is the wiring board】3.--Semiconductor device , which includes the connection of the 〇 t 任 任 任 项 项 项 项 项 项 项 项 项 项 项 项 项 项 项 项 项 项 项 项 项
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Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3648277B2 (en) * 1995-01-12 2005-05-18 株式会社東芝 Semiconductor device
JPH1021746A (en) * 1996-07-02 1998-01-23 Toshiba Chem Corp Anisotropic conductive film
EP0914027B1 (en) * 1996-07-15 2002-10-09 Hitachi Chemical Company, Ltd. Film-like adhesive for connecting circuit and circuit board
KR100568491B1 (en) * 1997-07-04 2006-04-07 제온 코포레이션 Adhesive for semiconductor components
JP2001184949A (en) * 1999-12-24 2001-07-06 Asahi Kasei Corp Anisotropy conductive material
WO2005035617A1 (en) * 2003-10-10 2005-04-21 Asahi Kasei Chemicals Corporation Latent curing agent and composition
JP4867181B2 (en) * 2005-03-17 2012-02-01 富士電機株式会社 Thermosetting resin composition for mounting electronic components
JP4626495B2 (en) * 2005-11-16 2011-02-09 日立化成工業株式会社 Adhesive for circuit connection

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI499775B (en) * 2013-01-28 2015-09-11 Tanaka Precious Metal Ind Metal paste for forming gas sensor electrodes
TWI671382B (en) * 2014-03-07 2019-09-11 日商積水化學工業股份有限公司 Conductive paste, connection structure, and manufacturing method of connection structure

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