CN102687603B - 导电连接材料、电子部件的生产方法以及具有导电连接材料的电子构件和电子部件 - Google Patents
导电连接材料、电子部件的生产方法以及具有导电连接材料的电子构件和电子部件 Download PDFInfo
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- 239000000463 material Substances 0.000 title claims abstract description 197
- 238000000034 method Methods 0.000 title claims description 84
- 229920005989 resin Polymers 0.000 claims abstract description 259
- 239000011347 resin Substances 0.000 claims abstract description 258
- 229910052751 metal Inorganic materials 0.000 claims abstract description 185
- 239000002184 metal Substances 0.000 claims abstract description 185
- 239000000758 substrate Substances 0.000 claims abstract description 49
- 239000000945 filler Substances 0.000 claims abstract description 36
- 238000010438 heat treatment Methods 0.000 claims description 57
- 229920005992 thermoplastic resin Polymers 0.000 claims description 55
- 150000001875 compounds Chemical class 0.000 claims description 46
- 208000034189 Sclerosis Diseases 0.000 claims description 42
- 238000004519 manufacturing process Methods 0.000 claims description 41
- 239000000843 powder Substances 0.000 claims description 36
- ISWSIDIOOBJBQZ-UHFFFAOYSA-N phenol group Chemical group C1(=CC=CC=C1)O ISWSIDIOOBJBQZ-UHFFFAOYSA-N 0.000 claims description 23
- 125000003178 carboxy group Chemical group [H]OC(*)=O 0.000 claims description 12
- 125000002887 hydroxy group Chemical group [H]O* 0.000 claims description 10
- 239000002245 particle Substances 0.000 claims description 8
- 238000007711 solidification Methods 0.000 claims description 8
- 230000008023 solidification Effects 0.000 claims description 8
- 229920001187 thermosetting polymer Polymers 0.000 claims description 7
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 6
- 230000015572 biosynthetic process Effects 0.000 claims description 5
- 239000000126 substance Substances 0.000 claims description 5
- 125000000962 organic group Chemical group 0.000 claims description 4
- 239000011342 resin composition Substances 0.000 description 111
- 239000003822 epoxy resin Substances 0.000 description 41
- 229920000647 polyepoxide Polymers 0.000 description 41
- 239000000203 mixture Substances 0.000 description 23
- 239000003795 chemical substances by application Substances 0.000 description 19
- IISBACLAFKSPIT-UHFFFAOYSA-N bisphenol A Chemical compound C=1C=C(O)C=CC=1C(C)(C)C1=CC=C(O)C=C1 IISBACLAFKSPIT-UHFFFAOYSA-N 0.000 description 18
- -1 glycidyl ester Chemical class 0.000 description 17
- 239000004065 semiconductor Substances 0.000 description 17
- 229920001577 copolymer Polymers 0.000 description 14
- CXMXRPHRNRROMY-UHFFFAOYSA-N sebacic acid Chemical compound OC(=O)CCCCCCCCC(O)=O CXMXRPHRNRROMY-UHFFFAOYSA-N 0.000 description 14
- 239000002253 acid Substances 0.000 description 13
- 238000002844 melting Methods 0.000 description 13
- 230000008018 melting Effects 0.000 description 13
- 229920001721 polyimide Polymers 0.000 description 13
- ZWEHNKRNPOVVGH-UHFFFAOYSA-N 2-Butanone Chemical compound CCC(C)=O ZWEHNKRNPOVVGH-UHFFFAOYSA-N 0.000 description 12
- 239000011248 coating agent Substances 0.000 description 12
- 238000000576 coating method Methods 0.000 description 12
- 239000009719 polyimide resin Substances 0.000 description 12
- 239000006087 Silane Coupling Agent Substances 0.000 description 11
- 229920000178 Acrylic resin Polymers 0.000 description 10
- 239000004925 Acrylic resin Substances 0.000 description 10
- 229920003986 novolac Polymers 0.000 description 10
- XNGIFLGASWRNHJ-UHFFFAOYSA-N phthalic acid Chemical compound OC(=O)C1=CC=CC=C1C(O)=O XNGIFLGASWRNHJ-UHFFFAOYSA-N 0.000 description 10
- 229910000679 solder Inorganic materials 0.000 description 10
- PNEYBMLMFCGWSK-UHFFFAOYSA-N Alumina Chemical group [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 9
- 238000010521 absorption reaction Methods 0.000 description 9
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 description 9
- 239000002904 solvent Substances 0.000 description 9
- 229930185605 Bisphenol Natural products 0.000 description 8
- 239000000853 adhesive Substances 0.000 description 8
- 230000001070 adhesive effect Effects 0.000 description 8
- WNLRTRBMVRJNCN-UHFFFAOYSA-N adipic acid Chemical compound OC(=O)CCCCC(O)=O WNLRTRBMVRJNCN-UHFFFAOYSA-N 0.000 description 8
- 229910045601 alloy Inorganic materials 0.000 description 8
- 239000000956 alloy Substances 0.000 description 8
- CERQOIWHTDAKMF-UHFFFAOYSA-N alpha-methacrylic acid Natural products CC(=C)C(O)=O CERQOIWHTDAKMF-UHFFFAOYSA-N 0.000 description 8
- PXKLMJQFEQBVLD-UHFFFAOYSA-N bisphenol F Chemical compound C1=CC(O)=CC=C1CC1=CC=C(O)C=C1 PXKLMJQFEQBVLD-UHFFFAOYSA-N 0.000 description 8
- LNTHITQWFMADLM-UHFFFAOYSA-N gallic acid Chemical compound OC(=O)C1=CC(O)=C(O)C(O)=C1 LNTHITQWFMADLM-UHFFFAOYSA-N 0.000 description 8
- 229920000305 Nylon 6,10 Polymers 0.000 description 7
- OFOBLEOULBTSOW-UHFFFAOYSA-N Propanedioic acid Natural products OC(=O)CC(O)=O OFOBLEOULBTSOW-UHFFFAOYSA-N 0.000 description 7
- 230000000694 effects Effects 0.000 description 7
- 229920006287 phenoxy resin Polymers 0.000 description 7
- 239000013034 phenoxy resin Substances 0.000 description 7
- 230000009467 reduction Effects 0.000 description 7
- 238000012360 testing method Methods 0.000 description 7
- 238000005382 thermal cycling Methods 0.000 description 7
- UHOVQNZJYSORNB-UHFFFAOYSA-N Benzene Chemical compound C1=CC=CC=C1 UHOVQNZJYSORNB-UHFFFAOYSA-N 0.000 description 6
- 229920002799 BoPET Polymers 0.000 description 6
- 239000005041 Mylar™ Substances 0.000 description 6
- ZMXDDKWLCZADIW-UHFFFAOYSA-N N,N-Dimethylformamide Chemical compound CN(C)C=O ZMXDDKWLCZADIW-UHFFFAOYSA-N 0.000 description 6
- FFFPYJTVNSSLBQ-UHFFFAOYSA-N Phenolphthalin Chemical compound OC(=O)C1=CC=CC=C1C(C=1C=CC(O)=CC=1)C1=CC=C(O)C=C1 FFFPYJTVNSSLBQ-UHFFFAOYSA-N 0.000 description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical group O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 6
- 229940106691 bisphenol a Drugs 0.000 description 6
- 230000000052 comparative effect Effects 0.000 description 6
- 239000002966 varnish Substances 0.000 description 6
- 150000008064 anhydrides Chemical class 0.000 description 5
- WPYMKLBDIGXBTP-UHFFFAOYSA-N benzoic acid Chemical compound OC(=O)C1=CC=CC=C1 WPYMKLBDIGXBTP-UHFFFAOYSA-N 0.000 description 5
- 239000010949 copper Substances 0.000 description 5
- 239000013078 crystal Substances 0.000 description 5
- 239000011888 foil Substances 0.000 description 5
- 125000000524 functional group Chemical group 0.000 description 5
- 150000004693 imidazolium salts Chemical class 0.000 description 5
- 239000005011 phenolic resin Substances 0.000 description 5
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 5
- GLDQAMYCGOIJDV-UHFFFAOYSA-N 2,3-dihydroxybenzoic acid Chemical compound OC(=O)C1=CC=CC(O)=C1O GLDQAMYCGOIJDV-UHFFFAOYSA-N 0.000 description 4
- UIAFKZKHHVMJGS-UHFFFAOYSA-N 2,4-dihydroxybenzoic acid Chemical compound OC(=O)C1=CC=C(O)C=C1O UIAFKZKHHVMJGS-UHFFFAOYSA-N 0.000 description 4
- WXTMDXOMEHJXQO-UHFFFAOYSA-N 2,5-dihydroxybenzoic acid Chemical compound OC(=O)C1=CC(O)=CC=C1O WXTMDXOMEHJXQO-UHFFFAOYSA-N 0.000 description 4
- QTWJRLJHJPIABL-UHFFFAOYSA-N 2-methylphenol;3-methylphenol;4-methylphenol Chemical compound CC1=CC=C(O)C=C1.CC1=CC=CC(O)=C1.CC1=CC=CC=C1O QTWJRLJHJPIABL-UHFFFAOYSA-N 0.000 description 4
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 4
- PPBRXRYQALVLMV-UHFFFAOYSA-N Styrene Chemical compound C=CC1=CC=CC=C1 PPBRXRYQALVLMV-UHFFFAOYSA-N 0.000 description 4
- KKEYFWRCBNTPAC-UHFFFAOYSA-N Terephthalic acid Chemical compound OC(=O)C1=CC=C(C(O)=O)C=C1 KKEYFWRCBNTPAC-UHFFFAOYSA-N 0.000 description 4
- 229920006243 acrylic copolymer Polymers 0.000 description 4
- 239000001361 adipic acid Substances 0.000 description 4
- 235000011037 adipic acid Nutrition 0.000 description 4
- 125000001931 aliphatic group Chemical group 0.000 description 4
- GCAIEATUVJFSMC-UHFFFAOYSA-N benzene-1,2,3,4-tetracarboxylic acid Chemical compound OC(=O)C1=CC=C(C(O)=O)C(C(O)=O)=C1C(O)=O GCAIEATUVJFSMC-UHFFFAOYSA-N 0.000 description 4
- 229930003836 cresol Natural products 0.000 description 4
- SWXVUIWOUIDPGS-UHFFFAOYSA-N diacetone alcohol Chemical compound CC(=O)CC(C)(C)O SWXVUIWOUIDPGS-UHFFFAOYSA-N 0.000 description 4
- 238000011049 filling Methods 0.000 description 4
- XOXYHGOIRWABTC-UHFFFAOYSA-N gentisin Chemical compound C1=C(O)C=C2C(=O)C3=C(O)C=C(OC)C=C3OC2=C1 XOXYHGOIRWABTC-UHFFFAOYSA-N 0.000 description 4
- LEQAOMBKQFMDFZ-UHFFFAOYSA-N glyoxal Chemical compound O=CC=O LEQAOMBKQFMDFZ-UHFFFAOYSA-N 0.000 description 4
- 238000009413 insulation Methods 0.000 description 4
- 238000003475 lamination Methods 0.000 description 4
- 239000003960 organic solvent Substances 0.000 description 4
- 150000002924 oxiranes Chemical class 0.000 description 4
- 150000002989 phenols Chemical class 0.000 description 4
- 230000000704 physical effect Effects 0.000 description 4
- WLJVNTCWHIRURA-UHFFFAOYSA-N pimelic acid Chemical compound OC(=O)CCCCCC(O)=O WLJVNTCWHIRURA-UHFFFAOYSA-N 0.000 description 4
- 229920000728 polyester Polymers 0.000 description 4
- 229920006324 polyoxymethylene Polymers 0.000 description 4
- YGSDEFSMJLZEOE-UHFFFAOYSA-N salicylic acid Chemical compound OC(=O)C1=CC=CC=C1O YGSDEFSMJLZEOE-UHFFFAOYSA-N 0.000 description 4
- 239000000523 sample Substances 0.000 description 4
- TYFQFVWCELRYAO-UHFFFAOYSA-N suberic acid Chemical compound OC(=O)CCCCCCC(O)=O TYFQFVWCELRYAO-UHFFFAOYSA-N 0.000 description 4
- QFGCFKJIPBRJGM-UHFFFAOYSA-N 12-[(2-methylpropan-2-yl)oxy]-12-oxododecanoic acid Chemical compound CC(C)(C)OC(=O)CCCCCCCCCCC(O)=O QFGCFKJIPBRJGM-UHFFFAOYSA-N 0.000 description 3
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 description 3
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 3
- 239000004593 Epoxy Substances 0.000 description 3
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 3
- LYCAIKOWRPUZTN-UHFFFAOYSA-N Ethylene glycol Chemical compound OCCO LYCAIKOWRPUZTN-UHFFFAOYSA-N 0.000 description 3
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 3
- OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical compound OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 description 3
- MUBZPKHOEPUJKR-UHFFFAOYSA-N Oxalic acid Chemical compound OC(=O)C(O)=O MUBZPKHOEPUJKR-UHFFFAOYSA-N 0.000 description 3
- 229910020816 Sn Pb Inorganic materials 0.000 description 3
- 229910020922 Sn-Pb Inorganic materials 0.000 description 3
- 229910008783 Sn—Pb Inorganic materials 0.000 description 3
- WYURNTSHIVDZCO-UHFFFAOYSA-N Tetrahydrofuran Chemical compound C1CCOC1 WYURNTSHIVDZCO-UHFFFAOYSA-N 0.000 description 3
- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Chemical compound CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 description 3
- GTDPSWPPOUPBNX-UHFFFAOYSA-N ac1mqpva Chemical compound CC12C(=O)OC(=O)C1(C)C1(C)C2(C)C(=O)OC1=O GTDPSWPPOUPBNX-UHFFFAOYSA-N 0.000 description 3
- 150000008065 acid anhydrides Chemical class 0.000 description 3
- XECAHXYUAAWDEL-UHFFFAOYSA-N acrylonitrile butadiene styrene Chemical compound C=CC=C.C=CC#N.C=CC1=CC=CC=C1 XECAHXYUAAWDEL-UHFFFAOYSA-N 0.000 description 3
- 239000004676 acrylonitrile butadiene styrene Substances 0.000 description 3
- 229920000122 acrylonitrile butadiene styrene Polymers 0.000 description 3
- 239000000654 additive Substances 0.000 description 3
- 150000007933 aliphatic carboxylic acids Chemical class 0.000 description 3
- 125000000484 butyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 3
- 230000004087 circulation Effects 0.000 description 3
- 238000001816 cooling Methods 0.000 description 3
- 229910052802 copper Inorganic materials 0.000 description 3
- 150000004985 diamines Chemical class 0.000 description 3
- ZUOUZKKEUPVFJK-UHFFFAOYSA-N diphenyl Chemical compound C1=CC=CC=C1C1=CC=CC=C1 ZUOUZKKEUPVFJK-UHFFFAOYSA-N 0.000 description 3
- 238000001035 drying Methods 0.000 description 3
- 150000002148 esters Chemical group 0.000 description 3
- 238000001704 evaporation Methods 0.000 description 3
- 230000008020 evaporation Effects 0.000 description 3
- 239000010931 gold Substances 0.000 description 3
- 238000005098 hot rolling Methods 0.000 description 3
- 239000007788 liquid Substances 0.000 description 3
- 230000000873 masking effect Effects 0.000 description 3
- 238000007747 plating Methods 0.000 description 3
- 229920005749 polyurethane resin Polymers 0.000 description 3
- 238000007639 printing Methods 0.000 description 3
- 230000008569 process Effects 0.000 description 3
- 230000009257 reactivity Effects 0.000 description 3
- 229920006395 saturated elastomer Polymers 0.000 description 3
- 239000000377 silicon dioxide Substances 0.000 description 3
- 235000012239 silicon dioxide Nutrition 0.000 description 3
- DHKHKXVYLBGOIT-UHFFFAOYSA-N 1,1-Diethoxyethane Chemical compound CCOC(C)OCC DHKHKXVYLBGOIT-UHFFFAOYSA-N 0.000 description 2
- RTBFRGCFXZNCOE-UHFFFAOYSA-N 1-methylsulfonylpiperidin-4-one Chemical compound CS(=O)(=O)N1CCC(=O)CC1 RTBFRGCFXZNCOE-UHFFFAOYSA-N 0.000 description 2
- 229940082044 2,3-dihydroxybenzoic acid Drugs 0.000 description 2
- BWAPJIHJXDYDPW-UHFFFAOYSA-N 2,5-dimethyl-p-phenylenediamine Chemical compound CC1=CC(N)=C(C)C=C1N BWAPJIHJXDYDPW-UHFFFAOYSA-N 0.000 description 2
- NKTOLZVEWDHZMU-UHFFFAOYSA-N 2,5-xylenol Chemical group CC1=CC=C(C)C(O)=C1 NKTOLZVEWDHZMU-UHFFFAOYSA-N 0.000 description 2
- NXXYKOUNUYWIHA-UHFFFAOYSA-N 2,6-Dimethylphenol Chemical compound CC1=CC=CC(C)=C1O NXXYKOUNUYWIHA-UHFFFAOYSA-N 0.000 description 2
- AKEUNCKRJATALU-UHFFFAOYSA-N 2,6-dihydroxybenzoic acid Chemical compound OC(=O)C1=C(O)C=CC=C1O AKEUNCKRJATALU-UHFFFAOYSA-N 0.000 description 2
- SMZOUWXMTYCWNB-UHFFFAOYSA-N 2-(2-methoxy-5-methylphenyl)ethanamine Chemical compound COC1=CC=C(C)C=C1CCN SMZOUWXMTYCWNB-UHFFFAOYSA-N 0.000 description 2
- IOHPVZBSOKLVMN-UHFFFAOYSA-N 2-(2-phenylethyl)benzoic acid Chemical compound OC(=O)C1=CC=CC=C1CCC1=CC=CC=C1 IOHPVZBSOKLVMN-UHFFFAOYSA-N 0.000 description 2
- PTTPXKJBFFKCEK-UHFFFAOYSA-N 2-Methyl-4-heptanone Chemical compound CC(C)CC(=O)CC(C)C PTTPXKJBFFKCEK-UHFFFAOYSA-N 0.000 description 2
- CQOZJDNCADWEKH-UHFFFAOYSA-N 2-[3,3-bis(2-hydroxyphenyl)propyl]phenol Chemical compound OC1=CC=CC=C1CCC(C=1C(=CC=CC=1)O)C1=CC=CC=C1O CQOZJDNCADWEKH-UHFFFAOYSA-N 0.000 description 2
- ZNQVEEAIQZEUHB-UHFFFAOYSA-N 2-ethoxyethanol Chemical class CCOCCO ZNQVEEAIQZEUHB-UHFFFAOYSA-N 0.000 description 2
- KXGFMDJXCMQABM-UHFFFAOYSA-N 2-methoxy-6-methylphenol Chemical compound [CH]OC1=CC=CC([CH])=C1O KXGFMDJXCMQABM-UHFFFAOYSA-N 0.000 description 2
- XLLIQLLCWZCATF-UHFFFAOYSA-N 2-methoxyethyl acetate Chemical compound COCCOC(C)=O XLLIQLLCWZCATF-UHFFFAOYSA-N 0.000 description 2
- UYEMGAFJOZZIFP-UHFFFAOYSA-N 3,5-dihydroxybenzoic acid Chemical compound OC(=O)C1=CC(O)=CC(O)=C1 UYEMGAFJOZZIFP-UHFFFAOYSA-N 0.000 description 2
- YELLAPKUWRTITI-UHFFFAOYSA-N 3,5-dihydroxynaphthalene-2-carboxylic acid Chemical class C1=CC(O)=C2C=C(O)C(C(=O)O)=CC2=C1 YELLAPKUWRTITI-UHFFFAOYSA-N 0.000 description 2
- TYOXIFXYEIILLY-UHFFFAOYSA-N 5-methyl-2-phenyl-1h-imidazole Chemical compound N1C(C)=CN=C1C1=CC=CC=C1 TYOXIFXYEIILLY-UHFFFAOYSA-N 0.000 description 2
- FERIUCNNQQJTOY-UHFFFAOYSA-N Butyric acid Chemical compound CCCC(O)=O FERIUCNNQQJTOY-UHFFFAOYSA-N 0.000 description 2
- VTYYLEPIZMXCLO-UHFFFAOYSA-L Calcium carbonate Chemical group [Ca+2].[O-]C([O-])=O VTYYLEPIZMXCLO-UHFFFAOYSA-L 0.000 description 2
- VZCYOOQTPOCHFL-OWOJBTEDSA-N Fumaric acid Chemical compound OC(=O)\C=C\C(O)=O VZCYOOQTPOCHFL-OWOJBTEDSA-N 0.000 description 2
- PEDCQBHIVMGVHV-UHFFFAOYSA-N Glycerine Chemical compound OCC(O)CO PEDCQBHIVMGVHV-UHFFFAOYSA-N 0.000 description 2
- PWLXTFFHCFWCGG-UHFFFAOYSA-N Heneicosanedioic acid Chemical compound OC(=O)CCCCCCCCCCCCCCCCCCCC(O)=O PWLXTFFHCFWCGG-UHFFFAOYSA-N 0.000 description 2
- PEEHTFAAVSWFBL-UHFFFAOYSA-N Maleimide Chemical compound O=C1NC(=O)C=C1 PEEHTFAAVSWFBL-UHFFFAOYSA-N 0.000 description 2
- BAPJBEWLBFYGME-UHFFFAOYSA-N Methyl acrylate Chemical compound COC(=O)C=C BAPJBEWLBFYGME-UHFFFAOYSA-N 0.000 description 2
- NTIZESTWPVYFNL-UHFFFAOYSA-N Methyl isobutyl ketone Chemical compound CC(C)CC(C)=O NTIZESTWPVYFNL-UHFFFAOYSA-N 0.000 description 2
- UIHCLUNTQKBZGK-UHFFFAOYSA-N Methyl isobutyl ketone Natural products CCC(C)C(C)=O UIHCLUNTQKBZGK-UHFFFAOYSA-N 0.000 description 2
- LRHPLDYGYMQRHN-UHFFFAOYSA-N N-Butanol Chemical compound CCCCO LRHPLDYGYMQRHN-UHFFFAOYSA-N 0.000 description 2
- 229930182556 Polyacetal Natural products 0.000 description 2
- 239000004952 Polyamide Substances 0.000 description 2
- 239000004962 Polyamide-imide Substances 0.000 description 2
- 239000005062 Polybutadiene Substances 0.000 description 2
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical group [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 2
- 239000011354 acetal resin Substances 0.000 description 2
- 230000000996 additive effect Effects 0.000 description 2
- JFCQEDHGNNZCLN-UHFFFAOYSA-N anhydrous glutaric acid Natural products OC(=O)CCCC(O)=O JFCQEDHGNNZCLN-UHFFFAOYSA-N 0.000 description 2
- 239000003963 antioxidant agent Substances 0.000 description 2
- 230000003078 antioxidant effect Effects 0.000 description 2
- 239000002216 antistatic agent Substances 0.000 description 2
- TZCXTZWJZNENPQ-UHFFFAOYSA-L barium sulfate Chemical compound [Ba+2].[O-]S([O-])(=O)=O TZCXTZWJZNENPQ-UHFFFAOYSA-L 0.000 description 2
- UJMDYLWCYJJYMO-UHFFFAOYSA-N benzene-1,2,3-tricarboxylic acid Chemical compound OC(=O)C1=CC=CC(C(O)=O)=C1C(O)=O UJMDYLWCYJJYMO-UHFFFAOYSA-N 0.000 description 2
- QMKYBPDZANOJGF-UHFFFAOYSA-N benzene-1,3,5-tricarboxylic acid Chemical compound OC(=O)C1=CC(C(O)=O)=CC(C(O)=O)=C1 QMKYBPDZANOJGF-UHFFFAOYSA-N 0.000 description 2
- 229940114055 beta-resorcylic acid Drugs 0.000 description 2
- 239000004305 biphenyl Substances 0.000 description 2
- 235000010290 biphenyl Nutrition 0.000 description 2
- FACXGONDLDSNOE-UHFFFAOYSA-N buta-1,3-diene;styrene Chemical compound C=CC=C.C=CC1=CC=CC=C1.C=CC1=CC=CC=C1 FACXGONDLDSNOE-UHFFFAOYSA-N 0.000 description 2
- BPOZNMOEPOHHSC-UHFFFAOYSA-N butyl prop-2-enoate;prop-2-enoic acid Chemical compound OC(=O)C=C.CCCCOC(=O)C=C BPOZNMOEPOHHSC-UHFFFAOYSA-N 0.000 description 2
- 229920005549 butyl rubber Polymers 0.000 description 2
- YCIMNLLNPGFGHC-UHFFFAOYSA-N catechol Chemical compound OC1=CC=CC=C1O YCIMNLLNPGFGHC-UHFFFAOYSA-N 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 229940125904 compound 1 Drugs 0.000 description 2
- 229940125782 compound 2 Drugs 0.000 description 2
- 238000010276 construction Methods 0.000 description 2
- 230000008878 coupling Effects 0.000 description 2
- 238000010168 coupling process Methods 0.000 description 2
- 238000005859 coupling reaction Methods 0.000 description 2
- JHIVVAPYMSGYDF-UHFFFAOYSA-N cyclohexanone Chemical compound O=C1CCCCC1 JHIVVAPYMSGYDF-UHFFFAOYSA-N 0.000 description 2
- 230000000254 damaging effect Effects 0.000 description 2
- RGLYKWWBQGJZGM-ISLYRVAYSA-N diethylstilbestrol Chemical group C=1C=C(O)C=CC=1C(/CC)=C(\CC)C1=CC=C(O)C=C1 RGLYKWWBQGJZGM-ISLYRVAYSA-N 0.000 description 2
- 229960000452 diethylstilbestrol Drugs 0.000 description 2
- XBDQKXXYIPTUBI-UHFFFAOYSA-N dimethylselenoniopropionate Natural products CCC(O)=O XBDQKXXYIPTUBI-UHFFFAOYSA-N 0.000 description 2
- TVIDDXQYHWJXFK-UHFFFAOYSA-N dodecanedioic acid Chemical compound OC(=O)CCCCCCCCCCC(O)=O TVIDDXQYHWJXFK-UHFFFAOYSA-N 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- FKRCODPIKNYEAC-UHFFFAOYSA-N ethyl propionate Chemical compound CCOC(=O)CC FKRCODPIKNYEAC-UHFFFAOYSA-N 0.000 description 2
- 230000004907 flux Effects 0.000 description 2
- 229940074391 gallic acid Drugs 0.000 description 2
- 235000004515 gallic acid Nutrition 0.000 description 2
- 229940015043 glyoxal Drugs 0.000 description 2
- IPCSVZSSVZVIGE-UHFFFAOYSA-N hexadecanoic acid Chemical compound CCCCCCCCCCCCCCCC(O)=O IPCSVZSSVZVIGE-UHFFFAOYSA-N 0.000 description 2
- FUZZWVXGSFPDMH-UHFFFAOYSA-N hexanoic acid Chemical compound CCCCCC(O)=O FUZZWVXGSFPDMH-UHFFFAOYSA-N 0.000 description 2
- 238000007731 hot pressing Methods 0.000 description 2
- 239000001257 hydrogen Substances 0.000 description 2
- 229910052739 hydrogen Inorganic materials 0.000 description 2
- CBFCDTFDPHXCNY-UHFFFAOYSA-N icosane Chemical compound CCCCCCCCCCCCCCCCCCCC CBFCDTFDPHXCNY-UHFFFAOYSA-N 0.000 description 2
- 150000002460 imidazoles Chemical class 0.000 description 2
- 239000011256 inorganic filler Substances 0.000 description 2
- 229910003475 inorganic filler Inorganic materials 0.000 description 2
- 238000009434 installation Methods 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- YDSWCNNOKPMOTP-UHFFFAOYSA-N mellitic acid Chemical compound OC(=O)C1=C(C(O)=O)C(C(O)=O)=C(C(O)=O)C(C(O)=O)=C1C(O)=O YDSWCNNOKPMOTP-UHFFFAOYSA-N 0.000 description 2
- BDAGIHXWWSANSR-UHFFFAOYSA-N methanoic acid Natural products OC=O BDAGIHXWWSANSR-UHFFFAOYSA-N 0.000 description 2
- 229940043265 methyl isobutyl ketone Drugs 0.000 description 2
- 238000002156 mixing Methods 0.000 description 2
- 239000000178 monomer Substances 0.000 description 2
- 150000005209 naphthoic acids Chemical class 0.000 description 2
- BDJRBEYXGGNYIS-UHFFFAOYSA-N nonanedioic acid Chemical compound OC(=O)CCCCCCCC(O)=O BDJRBEYXGGNYIS-UHFFFAOYSA-N 0.000 description 2
- QWVGKYWNOKOFNN-UHFFFAOYSA-N o-cresol Chemical compound CC1=CC=CC=C1O QWVGKYWNOKOFNN-UHFFFAOYSA-N 0.000 description 2
- RZJRJXONCZWCBN-UHFFFAOYSA-N octadecane Chemical compound CCCCCCCCCCCCCCCCCC RZJRJXONCZWCBN-UHFFFAOYSA-N 0.000 description 2
- 239000012766 organic filler Substances 0.000 description 2
- FJKROLUGYXJWQN-UHFFFAOYSA-N papa-hydroxy-benzoic acid Natural products OC(=O)C1=CC=C(O)C=C1 FJKROLUGYXJWQN-UHFFFAOYSA-N 0.000 description 2
- 229920001568 phenolic resin Polymers 0.000 description 2
- LGRFSURHDFAFJT-UHFFFAOYSA-N phthalic anhydride Chemical compound C1=CC=C2C(=O)OC(=O)C2=C1 LGRFSURHDFAFJT-UHFFFAOYSA-N 0.000 description 2
- 239000000049 pigment Substances 0.000 description 2
- 239000004014 plasticizer Substances 0.000 description 2
- 229920001084 poly(chloroprene) Polymers 0.000 description 2
- 229920002037 poly(vinyl butyral) polymer Polymers 0.000 description 2
- 229920000058 polyacrylate Polymers 0.000 description 2
- 229920002647 polyamide Polymers 0.000 description 2
- 229920002312 polyamide-imide Polymers 0.000 description 2
- 229920002857 polybutadiene Polymers 0.000 description 2
- 229920000642 polymer Polymers 0.000 description 2
- 229920002689 polyvinyl acetate Polymers 0.000 description 2
- 239000011118 polyvinyl acetate Substances 0.000 description 2
- 238000002360 preparation method Methods 0.000 description 2
- 238000003825 pressing Methods 0.000 description 2
- CYIDZMCFTVVTJO-UHFFFAOYSA-N pyromellitic acid Chemical compound OC(=O)C1=CC(C(O)=O)=C(C(O)=O)C=C1C(O)=O CYIDZMCFTVVTJO-UHFFFAOYSA-N 0.000 description 2
- GHMLBKRAJCXXBS-UHFFFAOYSA-N resorcinol Chemical compound OC1=CC=CC(O)=C1 GHMLBKRAJCXXBS-UHFFFAOYSA-N 0.000 description 2
- 238000005096 rolling process Methods 0.000 description 2
- 229960004889 salicylic acid Drugs 0.000 description 2
- 238000007493 shaping process Methods 0.000 description 2
- 238000004904 shortening Methods 0.000 description 2
- 239000007787 solid Substances 0.000 description 2
- 239000003381 stabilizer Substances 0.000 description 2
- 238000003860 storage Methods 0.000 description 2
- 229920000468 styrene butadiene styrene block copolymer Polymers 0.000 description 2
- KDYFGRWQOYBRFD-UHFFFAOYSA-N succinic acid Chemical compound OC(=O)CCC(O)=O KDYFGRWQOYBRFD-UHFFFAOYSA-N 0.000 description 2
- VZCYOOQTPOCHFL-UHFFFAOYSA-N trans-butenedioic acid Natural products OC(=O)C=CC(O)=O VZCYOOQTPOCHFL-UHFFFAOYSA-N 0.000 description 2
- 238000012546 transfer Methods 0.000 description 2
- 125000005591 trimellitate group Chemical group 0.000 description 2
- ARCGXLSVLAOJQL-UHFFFAOYSA-N trimellitic acid Chemical compound OC(=O)C1=CC=C(C(O)=O)C(C(O)=O)=C1 ARCGXLSVLAOJQL-UHFFFAOYSA-N 0.000 description 2
- DQZNLOXENNXVAD-UHFFFAOYSA-N trimethoxy-[2-(7-oxabicyclo[4.1.0]heptan-4-yl)ethyl]silane Chemical compound C1C(CC[Si](OC)(OC)OC)CCC2OC21 DQZNLOXENNXVAD-UHFFFAOYSA-N 0.000 description 2
- NQPDZGIKBAWPEJ-UHFFFAOYSA-N valeric acid Chemical compound CCCCC(O)=O NQPDZGIKBAWPEJ-UHFFFAOYSA-N 0.000 description 2
- 229920002554 vinyl polymer Polymers 0.000 description 2
- 230000000007 visual effect Effects 0.000 description 2
- HBGPNLPABVUVKZ-POTXQNELSA-N (1r,3as,4s,5ar,5br,7r,7ar,11ar,11br,13as,13br)-4,7-dihydroxy-3a,5a,5b,8,8,11a-hexamethyl-1-prop-1-en-2-yl-2,3,4,5,6,7,7a,10,11,11b,12,13,13a,13b-tetradecahydro-1h-cyclopenta[a]chrysen-9-one Chemical compound C([C@@]12C)CC(=O)C(C)(C)[C@@H]1[C@H](O)C[C@]([C@]1(C)C[C@@H]3O)(C)[C@@H]2CC[C@H]1[C@@H]1[C@]3(C)CC[C@H]1C(=C)C HBGPNLPABVUVKZ-POTXQNELSA-N 0.000 description 1
- RUEBPOOTFCZRBC-UHFFFAOYSA-N (5-methyl-2-phenyl-1h-imidazol-4-yl)methanol Chemical compound OCC1=C(C)NC(C=2C=CC=CC=2)=N1 RUEBPOOTFCZRBC-UHFFFAOYSA-N 0.000 description 1
- WRIDQFICGBMAFQ-UHFFFAOYSA-N (E)-8-Octadecenoic acid Natural products CCCCCCCCCC=CCCCCCCC(O)=O WRIDQFICGBMAFQ-UHFFFAOYSA-N 0.000 description 1
- WBYWAXJHAXSJNI-VOTSOKGWSA-M .beta-Phenylacrylic acid Natural products [O-]C(=O)\C=C\C1=CC=CC=C1 WBYWAXJHAXSJNI-VOTSOKGWSA-M 0.000 description 1
- WIAPFNDQWLOVKC-UHFFFAOYSA-N 1,3,5-trimethylcyclohexa-2,4-diene-1-carboxylic acid Chemical compound CC1=CC(C)=CC(C)(C(O)=O)C1 WIAPFNDQWLOVKC-UHFFFAOYSA-N 0.000 description 1
- URJFKQPLLWGDEI-UHFFFAOYSA-N 1-benzyl-2-methylimidazole Chemical compound CC1=NC=[C]N1CC1=CC=CC=C1 URJFKQPLLWGDEI-UHFFFAOYSA-N 0.000 description 1
- XZKLXPPYISZJCV-UHFFFAOYSA-N 1-benzyl-2-phenylimidazole Chemical compound C1=CN=C(C=2C=CC=CC=2)N1CC1=CC=CC=C1 XZKLXPPYISZJCV-UHFFFAOYSA-N 0.000 description 1
- VLDPXPPHXDGHEW-UHFFFAOYSA-N 1-chloro-2-dichlorophosphoryloxybenzene Chemical compound ClC1=CC=CC=C1OP(Cl)(Cl)=O VLDPXPPHXDGHEW-UHFFFAOYSA-N 0.000 description 1
- PFRGGOIBYLYVKM-UHFFFAOYSA-N 15alpha-hydroxylup-20(29)-en-3-one Natural products CC(=C)C1CCC2(C)CC(O)C3(C)C(CCC4C5(C)CCC(=O)C(C)(C)C5CCC34C)C12 PFRGGOIBYLYVKM-UHFFFAOYSA-N 0.000 description 1
- HDIJZFORGDBEKL-UHFFFAOYSA-N 2,3,4-trimethylbenzoic acid Chemical compound CC1=CC=C(C(O)=O)C(C)=C1C HDIJZFORGDBEKL-UHFFFAOYSA-N 0.000 description 1
- 150000000341 2,3-xylenols Chemical class 0.000 description 1
- FFFIRKXTFQCCKJ-UHFFFAOYSA-N 2,4,6-trimethylbenzoic acid Chemical compound CC1=CC(C)=C(C(O)=O)C(C)=C1 FFFIRKXTFQCCKJ-UHFFFAOYSA-N 0.000 description 1
- 150000005174 2,4-dihydroxybenzoic acids Chemical class 0.000 description 1
- KUFFULVDNCHOFZ-UHFFFAOYSA-N 2,4-xylenol Chemical group CC1=CC=C(O)C(C)=C1 KUFFULVDNCHOFZ-UHFFFAOYSA-N 0.000 description 1
- JPSKCQCQZUGWNM-UHFFFAOYSA-N 2,7-Oxepanedione Chemical compound O=C1CCCCC(=O)O1 JPSKCQCQZUGWNM-UHFFFAOYSA-N 0.000 description 1
- ICQLQVWXFUWFRI-UHFFFAOYSA-N 2-(2-methylimidazol-1-yl)propanenitrile Chemical compound N#CC(C)N1C=CN=C1C ICQLQVWXFUWFRI-UHFFFAOYSA-N 0.000 description 1
- XNWFRZJHXBZDAG-UHFFFAOYSA-N 2-METHOXYETHANOL Chemical compound COCCO XNWFRZJHXBZDAG-UHFFFAOYSA-N 0.000 description 1
- NIXOWILDQLNWCW-UHFFFAOYSA-N 2-Propenoic acid Natural products OC(=O)C=C NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 description 1
- POAOYUHQDCAZBD-UHFFFAOYSA-N 2-butoxyethanol Chemical compound CCCCOCCO POAOYUHQDCAZBD-UHFFFAOYSA-N 0.000 description 1
- SVONRAPFKPVNKG-UHFFFAOYSA-N 2-ethoxyethyl acetate Chemical compound CCOCCOC(C)=O SVONRAPFKPVNKG-UHFFFAOYSA-N 0.000 description 1
- YTWBFUCJVWKCCK-UHFFFAOYSA-N 2-heptadecyl-1h-imidazole Chemical compound CCCCCCCCCCCCCCCCCC1=NC=CN1 YTWBFUCJVWKCCK-UHFFFAOYSA-N 0.000 description 1
- 229940044192 2-hydroxyethyl methacrylate Drugs 0.000 description 1
- LXBGSDVWAMZHDD-UHFFFAOYSA-N 2-methyl-1h-imidazole Chemical compound CC1=NC=CN1 LXBGSDVWAMZHDD-UHFFFAOYSA-N 0.000 description 1
- DUIOKRXOKLLURE-UHFFFAOYSA-N 2-octylphenol Chemical compound CCCCCCCCC1=CC=CC=C1O DUIOKRXOKLLURE-UHFFFAOYSA-N 0.000 description 1
- ZCUJYXPAKHMBAZ-UHFFFAOYSA-N 2-phenyl-1h-imidazole Chemical compound C1=CNC(C=2C=CC=CC=2)=N1 ZCUJYXPAKHMBAZ-UHFFFAOYSA-N 0.000 description 1
- LLEASVZEQBICSN-UHFFFAOYSA-N 2-undecyl-1h-imidazole Chemical compound CCCCCCCCCCCC1=NC=CN1 LLEASVZEQBICSN-UHFFFAOYSA-N 0.000 description 1
- LQJBNNIYVWPHFW-UHFFFAOYSA-N 20:1omega9c fatty acid Natural products CCCCCCCCCCC=CCCCCCCCC(O)=O LQJBNNIYVWPHFW-UHFFFAOYSA-N 0.000 description 1
- UMVOQQDNEYOJOK-UHFFFAOYSA-N 3,5-dimethylbenzoic acid Chemical compound CC1=CC(C)=CC(C(O)=O)=C1 UMVOQQDNEYOJOK-UHFFFAOYSA-N 0.000 description 1
- 150000000469 3,5-xylenols Chemical class 0.000 description 1
- UIDDPPKZYZTEGS-UHFFFAOYSA-N 3-(2-ethyl-4-methylimidazol-1-yl)propanenitrile Chemical compound CCC1=NC(C)=CN1CCC#N UIDDPPKZYZTEGS-UHFFFAOYSA-N 0.000 description 1
- BVYPJEBKDLFIDL-UHFFFAOYSA-N 3-(2-phenylimidazol-1-yl)propanenitrile Chemical compound N#CCCN1C=CN=C1C1=CC=CC=C1 BVYPJEBKDLFIDL-UHFFFAOYSA-N 0.000 description 1
- SZUPZARBRLCVCB-UHFFFAOYSA-N 3-(2-undecylimidazol-1-yl)propanenitrile Chemical compound CCCCCCCCCCCC1=NC=CN1CCC#N SZUPZARBRLCVCB-UHFFFAOYSA-N 0.000 description 1
- GGGXENQKNGTQSF-UHFFFAOYSA-N 3-[dimethylsilyloxy(dimethyl)silyl]propan-1-amine Chemical compound C[SiH](C)O[Si](C)(C)CCCN GGGXENQKNGTQSF-UHFFFAOYSA-N 0.000 description 1
- DCSSXQMBIGEQGN-UHFFFAOYSA-N 4,6-dimethylbenzene-1,3-diamine Chemical compound CC1=CC(C)=C(N)C=C1N DCSSXQMBIGEQGN-UHFFFAOYSA-N 0.000 description 1
- OSWFIVFLDKOXQC-UHFFFAOYSA-N 4-(3-methoxyphenyl)aniline Chemical compound COC1=CC=CC(C=2C=CC(N)=CC=2)=C1 OSWFIVFLDKOXQC-UHFFFAOYSA-N 0.000 description 1
- VESRBMGDECAMNH-UHFFFAOYSA-N 4-[2-(4-hydroxyphenyl)propan-2-yl]-2,3,5,6-tetramethylphenol Chemical compound CC1=C(C(=C(C(=C1O)C)C)C(C)(C)C1=CC=C(C=C1)O)C VESRBMGDECAMNH-UHFFFAOYSA-N 0.000 description 1
- QHPQWRBYOIRBIT-UHFFFAOYSA-N 4-tert-butylphenol Chemical compound CC(C)(C)C1=CC=C(O)C=C1 QHPQWRBYOIRBIT-UHFFFAOYSA-N 0.000 description 1
- ULKLGIFJWFIQFF-UHFFFAOYSA-N 5K8XI641G3 Chemical compound CCC1=NC=C(C)N1 ULKLGIFJWFIQFF-UHFFFAOYSA-N 0.000 description 1
- CSHJJWDAZSZQBT-UHFFFAOYSA-N 7a-methyl-4,5-dihydro-3ah-2-benzofuran-1,3-dione Chemical compound C1=CCCC2C(=O)OC(=O)C21C CSHJJWDAZSZQBT-UHFFFAOYSA-N 0.000 description 1
- QSBYPNXLFMSGKH-UHFFFAOYSA-N 9-Heptadecensaeure Natural products CCCCCCCC=CCCCCCCCC(O)=O QSBYPNXLFMSGKH-UHFFFAOYSA-N 0.000 description 1
- 229920002126 Acrylic acid copolymer Polymers 0.000 description 1
- 229910017944 Ag—Cu Inorganic materials 0.000 description 1
- 229910052582 BN Inorganic materials 0.000 description 1
- 229920001342 Bakelite® Polymers 0.000 description 1
- 239000005711 Benzoic acid Substances 0.000 description 1
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical group N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 description 1
- 229910001018 Cast iron Inorganic materials 0.000 description 1
- WBYWAXJHAXSJNI-SREVYHEPSA-N Cinnamic acid Chemical compound OC(=O)\C=C/C1=CC=CC=C1 WBYWAXJHAXSJNI-SREVYHEPSA-N 0.000 description 1
- 239000004641 Diallyl-phthalate Substances 0.000 description 1
- 206010059866 Drug resistance Diseases 0.000 description 1
- 206010013786 Dry skin Diseases 0.000 description 1
- KRHYYFGTRYWZRS-UHFFFAOYSA-M Fluoride anion Chemical compound [F-] KRHYYFGTRYWZRS-UHFFFAOYSA-M 0.000 description 1
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 1
- VQTUBCCKSQIDNK-UHFFFAOYSA-N Isobutene Chemical group CC(C)=C VQTUBCCKSQIDNK-UHFFFAOYSA-N 0.000 description 1
- 229920000106 Liquid crystal polymer Polymers 0.000 description 1
- 239000004977 Liquid-crystal polymers (LCPs) Substances 0.000 description 1
- IFAWYXIHOVRGHQ-UHFFFAOYSA-N Nonadecandioic acid Chemical compound OC(=O)CCCCCCCCCCCCCCCCCC(O)=O IFAWYXIHOVRGHQ-UHFFFAOYSA-N 0.000 description 1
- 239000004677 Nylon Substances 0.000 description 1
- 239000005642 Oleic acid Substances 0.000 description 1
- ZQPPMHVWECSIRJ-UHFFFAOYSA-N Oleic acid Natural products CCCCCCCCC=CCCCCCCCC(O)=O ZQPPMHVWECSIRJ-UHFFFAOYSA-N 0.000 description 1
- 235000021314 Palmitic acid Nutrition 0.000 description 1
- 239000004696 Poly ether ether ketone Substances 0.000 description 1
- 229920002319 Poly(methyl acrylate) Polymers 0.000 description 1
- 229920002732 Polyanhydride Polymers 0.000 description 1
- 239000004695 Polyether sulfone Substances 0.000 description 1
- 239000004697 Polyetherimide Substances 0.000 description 1
- 239000004642 Polyimide Substances 0.000 description 1
- 239000004721 Polyphenylene oxide Substances 0.000 description 1
- 239000004734 Polyphenylene sulfide Substances 0.000 description 1
- 239000004372 Polyvinyl alcohol Substances 0.000 description 1
- SOKRNBGSNZXYIO-UHFFFAOYSA-N Resinone Natural products CC(=C)C1CCC2(C)C(O)CC3(C)C(CCC4C5(C)CCC(=O)C(C)(C)C5CCC34C)C12 SOKRNBGSNZXYIO-UHFFFAOYSA-N 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 229910001128 Sn alloy Inorganic materials 0.000 description 1
- 229910020836 Sn-Ag Inorganic materials 0.000 description 1
- 229910020830 Sn-Bi Inorganic materials 0.000 description 1
- 229910020988 Sn—Ag Inorganic materials 0.000 description 1
- 229910018728 Sn—Bi Inorganic materials 0.000 description 1
- 229910018956 Sn—In Inorganic materials 0.000 description 1
- 229920002125 Sokalan® Polymers 0.000 description 1
- 235000021355 Stearic acid Nutrition 0.000 description 1
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical group O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 1
- XTXRWKRVRITETP-UHFFFAOYSA-N Vinyl acetate Chemical compound CC(=O)OC=C XTXRWKRVRITETP-UHFFFAOYSA-N 0.000 description 1
- BZHJMEDXRYGGRV-UHFFFAOYSA-N Vinyl chloride Chemical compound ClC=C BZHJMEDXRYGGRV-UHFFFAOYSA-N 0.000 description 1
- QYKIQEUNHZKYBP-UHFFFAOYSA-N Vinyl ether Chemical compound C=COC=C QYKIQEUNHZKYBP-UHFFFAOYSA-N 0.000 description 1
- UUQQGGWZVKUCBD-UHFFFAOYSA-N [4-(hydroxymethyl)-2-phenyl-1h-imidazol-5-yl]methanol Chemical compound N1C(CO)=C(CO)N=C1C1=CC=CC=C1 UUQQGGWZVKUCBD-UHFFFAOYSA-N 0.000 description 1
- 235000011054 acetic acid Nutrition 0.000 description 1
- 150000001298 alcohols Chemical class 0.000 description 1
- 239000004411 aluminium Substances 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- WNROFYMDJYEPJX-UHFFFAOYSA-K aluminium hydroxide Chemical group [OH-].[OH-].[OH-].[Al+3] WNROFYMDJYEPJX-UHFFFAOYSA-K 0.000 description 1
- 229910021502 aluminium hydroxide Inorganic materials 0.000 description 1
- 150000001412 amines Chemical class 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 229910052787 antimony Inorganic materials 0.000 description 1
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 1
- 229910000410 antimony oxide Inorganic materials 0.000 description 1
- 150000004984 aromatic diamines Chemical class 0.000 description 1
- 150000004945 aromatic hydrocarbons Chemical class 0.000 description 1
- 125000003118 aryl group Chemical group 0.000 description 1
- 239000011324 bead Substances 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 235000010233 benzoic acid Nutrition 0.000 description 1
- LLEMOWNGBBNAJR-UHFFFAOYSA-N biphenyl-2-ol Chemical compound OC1=CC=CC=C1C1=CC=CC=C1 LLEMOWNGBBNAJR-UHFFFAOYSA-N 0.000 description 1
- QUDWYFHPNIMBFC-UHFFFAOYSA-N bis(prop-2-enyl) benzene-1,2-dicarboxylate Chemical compound C=CCOC(=O)C1=CC=CC=C1C(=O)OCC=C QUDWYFHPNIMBFC-UHFFFAOYSA-N 0.000 description 1
- 229910052797 bismuth Inorganic materials 0.000 description 1
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 description 1
- ZFVMWEVVKGLCIJ-UHFFFAOYSA-N bisphenol AF Chemical compound C1=CC(O)=CC=C1C(C(F)(F)F)(C(F)(F)F)C1=CC=C(O)C=C1 ZFVMWEVVKGLCIJ-UHFFFAOYSA-N 0.000 description 1
- 229910000019 calcium carbonate Inorganic materials 0.000 description 1
- 150000001732 carboxylic acid derivatives Chemical class 0.000 description 1
- 239000001913 cellulose Substances 0.000 description 1
- 229920002678 cellulose Polymers 0.000 description 1
- 238000004587 chromatography analysis Methods 0.000 description 1
- 229930016911 cinnamic acid Natural products 0.000 description 1
- 235000013985 cinnamic acid Nutrition 0.000 description 1
- 239000004927 clay Chemical group 0.000 description 1
- 229910052570 clay Inorganic materials 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 229940126214 compound 3 Drugs 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 235000009508 confectionery Nutrition 0.000 description 1
- 238000007596 consolidation process Methods 0.000 description 1
- 239000007822 coupling agent Substances 0.000 description 1
- LDHQCZJRKDOVOX-NSCUHMNNSA-N crotonic acid Chemical compound C\C=C\C(O)=O LDHQCZJRKDOVOX-NSCUHMNNSA-N 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 238000000354 decomposition reaction Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 125000006159 dianhydride group Chemical group 0.000 description 1
- IEJIGPNLZYLLBP-UHFFFAOYSA-N dimethyl carbonate Chemical compound COC(=O)OC IEJIGPNLZYLLBP-UHFFFAOYSA-N 0.000 description 1
- POULHZVOKOAJMA-UHFFFAOYSA-M dodecanoate Chemical compound CCCCCCCCCCCC([O-])=O POULHZVOKOAJMA-UHFFFAOYSA-M 0.000 description 1
- 210000005069 ears Anatomy 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 230000005674 electromagnetic induction Effects 0.000 description 1
- 239000012776 electronic material Substances 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 239000012530 fluid Substances 0.000 description 1
- 235000019253 formic acid Nutrition 0.000 description 1
- 239000012634 fragment Substances 0.000 description 1
- 239000001530 fumaric acid Substances 0.000 description 1
- ANSXAPJVJOKRDJ-UHFFFAOYSA-N furo[3,4-f][2]benzofuran-1,3,5,7-tetrone Chemical compound C1=C2C(=O)OC(=O)C2=CC2=C1C(=O)OC2=O ANSXAPJVJOKRDJ-UHFFFAOYSA-N 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 239000011521 glass Chemical group 0.000 description 1
- 239000003365 glass fiber Chemical group 0.000 description 1
- 230000009477 glass transition Effects 0.000 description 1
- 235000011187 glycerol Nutrition 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000004021 humic acid Substances 0.000 description 1
- 125000004435 hydrogen atom Chemical class [H]* 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 230000008595 infiltration Effects 0.000 description 1
- 238000001764 infiltration Methods 0.000 description 1
- 239000004615 ingredient Substances 0.000 description 1
- QXJSBBXBKPUZAA-UHFFFAOYSA-N isooleic acid Natural products CCCCCCCC=CCCCCCCCCC(O)=O QXJSBBXBKPUZAA-UHFFFAOYSA-N 0.000 description 1
- 150000002576 ketones Chemical class 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 229940070765 laurate Drugs 0.000 description 1
- 150000002632 lipids Chemical class 0.000 description 1
- 238000011068 loading method Methods 0.000 description 1
- 239000000314 lubricant Substances 0.000 description 1
- RLSSMJSEOOYNOY-UHFFFAOYSA-N m-cresol Chemical compound CC1=CC=CC(O)=C1 RLSSMJSEOOYNOY-UHFFFAOYSA-N 0.000 description 1
- VTHJTEIRLNZDEV-UHFFFAOYSA-L magnesium dihydroxide Chemical group [OH-].[OH-].[Mg+2] VTHJTEIRLNZDEV-UHFFFAOYSA-L 0.000 description 1
- 239000000347 magnesium hydroxide Chemical group 0.000 description 1
- 229910001862 magnesium hydroxide Inorganic materials 0.000 description 1
- 239000000395 magnesium oxide Chemical group 0.000 description 1
- CPLXHLVBOLITMK-UHFFFAOYSA-N magnesium oxide Inorganic materials [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 description 1
- AXZKOIWUVFPNLO-UHFFFAOYSA-N magnesium;oxygen(2-) Chemical group [O-2].[Mg+2] AXZKOIWUVFPNLO-UHFFFAOYSA-N 0.000 description 1
- VZCYOOQTPOCHFL-UPHRSURJSA-N maleic acid Chemical compound OC(=O)\C=C/C(O)=O VZCYOOQTPOCHFL-UPHRSURJSA-N 0.000 description 1
- 239000011976 maleic acid Substances 0.000 description 1
- 239000000155 melt Substances 0.000 description 1
- AUHZEENZYGFFBQ-UHFFFAOYSA-N mesitylene Substances CC1=CC(C)=CC(C)=C1 AUHZEENZYGFFBQ-UHFFFAOYSA-N 0.000 description 1
- 125000001827 mesitylenyl group Chemical group [H]C1=C(C(*)=C(C([H])=C1C([H])([H])[H])C([H])([H])[H])C([H])([H])[H] 0.000 description 1
- 229940100630 metacresol Drugs 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 229920003145 methacrylic acid copolymer Polymers 0.000 description 1
- 229940117841 methacrylic acid copolymer Drugs 0.000 description 1
- ADFPJHOAARPYLP-UHFFFAOYSA-N methyl 2-methylprop-2-enoate;styrene Chemical compound COC(=O)C(C)=C.C=CC1=CC=CC=C1 ADFPJHOAARPYLP-UHFFFAOYSA-N 0.000 description 1
- WBYWAXJHAXSJNI-UHFFFAOYSA-N methyl p-hydroxycinnamate Natural products OC(=O)C=CC1=CC=CC=C1 WBYWAXJHAXSJNI-UHFFFAOYSA-N 0.000 description 1
- 239000010445 mica Chemical group 0.000 description 1
- 229910052618 mica group Inorganic materials 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- WQEPLUUGTLDZJY-UHFFFAOYSA-N n-Pentadecanoic acid Natural products CCCCCCCCCCCCCCC(O)=O WQEPLUUGTLDZJY-UHFFFAOYSA-N 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 229920001778 nylon Polymers 0.000 description 1
- ZWLPBLYKEWSWPD-UHFFFAOYSA-N o-toluic acid Chemical compound CC1=CC=CC=C1C(O)=O ZWLPBLYKEWSWPD-UHFFFAOYSA-N 0.000 description 1
- 229940038384 octadecane Drugs 0.000 description 1
- QIQXTHQIDYTFRH-UHFFFAOYSA-N octadecanoic acid Chemical compound CCCCCCCCCCCCCCCCCC(O)=O QIQXTHQIDYTFRH-UHFFFAOYSA-N 0.000 description 1
- OQCDKBAXFALNLD-UHFFFAOYSA-N octadecanoic acid Natural products CCCCCCCC(C)CCCCCCCCC(O)=O OQCDKBAXFALNLD-UHFFFAOYSA-N 0.000 description 1
- 239000003921 oil Substances 0.000 description 1
- ZQPPMHVWECSIRJ-KTKRTIGZSA-N oleic acid Chemical compound CCCCCCCC\C=C/CCCCCCCC(O)=O ZQPPMHVWECSIRJ-KTKRTIGZSA-N 0.000 description 1
- 235000006408 oxalic acid Nutrition 0.000 description 1
- AHHWIHXENZJRFG-UHFFFAOYSA-N oxetane Chemical compound C1COC1 AHHWIHXENZJRFG-UHFFFAOYSA-N 0.000 description 1
- AFEQENGXSMURHA-UHFFFAOYSA-N oxiran-2-ylmethanamine Chemical compound NCC1CO1 AFEQENGXSMURHA-UHFFFAOYSA-N 0.000 description 1
- VTRUBDSFZJNXHI-UHFFFAOYSA-N oxoantimony Chemical group [Sb]=O VTRUBDSFZJNXHI-UHFFFAOYSA-N 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- IWDCLRJOBJJRNH-UHFFFAOYSA-N p-cresol Chemical compound CC1=CC=C(O)C=C1 IWDCLRJOBJJRNH-UHFFFAOYSA-N 0.000 description 1
- NRZWYNLTFLDQQX-UHFFFAOYSA-N p-tert-Amylphenol Chemical compound CCC(C)(C)C1=CC=C(O)C=C1 NRZWYNLTFLDQQX-UHFFFAOYSA-N 0.000 description 1
- 238000012856 packing Methods 0.000 description 1
- VHDHONCVIHDOAO-UHFFFAOYSA-N pentacosanedioic acid Chemical compound OC(=O)CCCCCCCCCCCCCCCCCCCCCCCC(O)=O VHDHONCVIHDOAO-UHFFFAOYSA-N 0.000 description 1
- 229920005575 poly(amic acid) Polymers 0.000 description 1
- 229920001490 poly(butyl methacrylate) polymer Polymers 0.000 description 1
- 229920001483 poly(ethyl methacrylate) polymer Polymers 0.000 description 1
- 229920003214 poly(methacrylonitrile) Polymers 0.000 description 1
- 229920003229 poly(methyl methacrylate) Polymers 0.000 description 1
- 229920002401 polyacrylamide Polymers 0.000 description 1
- 239000004584 polyacrylic acid Substances 0.000 description 1
- 229920002239 polyacrylonitrile Polymers 0.000 description 1
- 229920001225 polyester resin Polymers 0.000 description 1
- 239000004645 polyester resin Substances 0.000 description 1
- 229920006393 polyether sulfone Polymers 0.000 description 1
- 229920002530 polyetherether ketone Polymers 0.000 description 1
- 229920001601 polyetherimide Polymers 0.000 description 1
- 229920000120 polyethyl acrylate Polymers 0.000 description 1
- 229920000193 polymethacrylate Polymers 0.000 description 1
- 239000004926 polymethyl methacrylate Substances 0.000 description 1
- 229920006380 polyphenylene oxide Polymers 0.000 description 1
- 229920000069 polyphenylene sulfide Polymers 0.000 description 1
- 229920002451 polyvinyl alcohol Polymers 0.000 description 1
- 229920000915 polyvinyl chloride Polymers 0.000 description 1
- 239000002243 precursor Substances 0.000 description 1
- 125000002924 primary amino group Chemical group [H]N([H])* 0.000 description 1
- 230000001737 promoting effect Effects 0.000 description 1
- 235000019260 propionic acid Nutrition 0.000 description 1
- 238000004080 punching Methods 0.000 description 1
- HNJBEVLQSNELDL-UHFFFAOYSA-N pyrrolidin-2-one Chemical compound O=C1CCCN1 HNJBEVLQSNELDL-UHFFFAOYSA-N 0.000 description 1
- IUVKMZGDUIUOCP-BTNSXGMBSA-N quinbolone Chemical compound O([C@H]1CC[C@H]2[C@H]3[C@@H]([C@]4(C=CC(=O)C=C4CC3)C)CC[C@@]21C)C1=CCCC1 IUVKMZGDUIUOCP-BTNSXGMBSA-N 0.000 description 1
- 150000003254 radicals Chemical class 0.000 description 1
- 230000002787 reinforcement Effects 0.000 description 1
- 230000003252 repetitive effect Effects 0.000 description 1
- 238000004626 scanning electron microscopy Methods 0.000 description 1
- FZHAPNGMFPVSLP-UHFFFAOYSA-N silanamine Chemical compound [SiH3]N FZHAPNGMFPVSLP-UHFFFAOYSA-N 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 238000005476 soldering Methods 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- 239000008117 stearic acid Substances 0.000 description 1
- 238000005728 strengthening Methods 0.000 description 1
- 229920003048 styrene butadiene rubber Polymers 0.000 description 1
- 229960005137 succinic acid Drugs 0.000 description 1
- RINCXYDBBGOEEQ-UHFFFAOYSA-N succinic anhydride Chemical compound O=C1CCC(=O)O1 RINCXYDBBGOEEQ-UHFFFAOYSA-N 0.000 description 1
- 239000000454 talc Chemical group 0.000 description 1
- 229910052623 talc Inorganic materials 0.000 description 1
- 235000012222 talc Nutrition 0.000 description 1
- JBQYATWDVHIOAR-UHFFFAOYSA-N tellanylidenegermanium Chemical compound [Te]=[Ge] JBQYATWDVHIOAR-UHFFFAOYSA-N 0.000 description 1
- TUNFSRHWOTWDNC-HKGQFRNVSA-N tetradecanoic acid Chemical compound CCCCCCCCCCCCC[14C](O)=O TUNFSRHWOTWDNC-HKGQFRNVSA-N 0.000 description 1
- 238000005979 thermal decomposition reaction Methods 0.000 description 1
- 230000000930 thermomechanical effect Effects 0.000 description 1
- 229920002803 thermoplastic polyurethane Polymers 0.000 description 1
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 1
- LDHQCZJRKDOVOX-UHFFFAOYSA-N trans-crotonic acid Natural products CC=CC(O)=O LDHQCZJRKDOVOX-UHFFFAOYSA-N 0.000 description 1
- QENJZWZWAWWESF-UHFFFAOYSA-N tri-methylbenzoic acid Natural products CC1=CC(C)=C(C(O)=O)C=C1C QENJZWZWAWWESF-UHFFFAOYSA-N 0.000 description 1
- SRPWOOOHEPICQU-UHFFFAOYSA-N trimellitic anhydride Chemical compound OC(=O)C1=CC=C2C(=O)OC(=O)C2=C1 SRPWOOOHEPICQU-UHFFFAOYSA-N 0.000 description 1
- 229920006337 unsaturated polyester resin Polymers 0.000 description 1
- 229940005605 valeric acid Drugs 0.000 description 1
- 229940117958 vinyl acetate Drugs 0.000 description 1
- 238000003466 welding Methods 0.000 description 1
- 239000011787 zinc oxide Chemical group 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/30—Assembling printed circuits with electric components, e.g. with resistor
- H05K3/32—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits
- H05K3/34—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits by soldering
- H05K3/3457—Solder materials or compositions; Methods of application thereof
- H05K3/3478—Applying solder preforms; Transferring prefabricated solder patterns
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/30—Assembling printed circuits with electric components, e.g. with resistor
- H05K3/32—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits
- H05K3/34—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits by soldering
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
- C08L63/00—Compositions of epoxy resins; Compositions of derivatives of epoxy resins
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B5/00—Non-insulated conductors or conductive bodies characterised by their form
- H01B5/02—Single bars, rods, wires, or strips
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/10—Bump connectors ; Manufacturing methods related thereto
- H01L24/11—Manufacturing methods
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L24/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
- H01L24/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L24/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L24/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L24/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01R—ELECTRICALLY-CONDUCTIVE CONNECTIONS; STRUCTURAL ASSOCIATIONS OF A PLURALITY OF MUTUALLY-INSULATED ELECTRICAL CONNECTING ELEMENTS; COUPLING DEVICES; CURRENT COLLECTORS
- H01R11/00—Individual connecting elements providing two or more spaced connecting locations for conductive members which are, or may be, thereby interconnected, e.g. end pieces for wires or cables supported by the wire or cable and having means for facilitating electrical connection to some other wire, terminal, or conductive member, blocks of binding posts
- H01R11/01—Individual connecting elements providing two or more spaced connecting locations for conductive members which are, or may be, thereby interconnected, e.g. end pieces for wires or cables supported by the wire or cable and having means for facilitating electrical connection to some other wire, terminal, or conductive member, blocks of binding posts characterised by the form or arrangement of the conductive interconnection between the connecting locations
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/04026—Bonding areas specifically adapted for layer connectors
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
- H01L2224/0554—External layer
- H01L2224/0556—Disposition
- H01L2224/05568—Disposition the whole external layer protruding from the surface
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/11—Manufacturing methods
- H01L2224/115—Manufacturing methods by chemical or physical modification of a pre-existing or pre-deposited material
- H01L2224/1152—Self-assembly, e.g. self-agglomeration of the bump material in a fluid
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
- H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
- H01L2224/29001—Core members of the layer connector
- H01L2224/2901—Shape
- H01L2224/29012—Shape in top view
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
- H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
- H01L2224/29001—Core members of the layer connector
- H01L2224/29075—Plural core members
- H01L2224/29076—Plural core members being mutually engaged together, e.g. through inserts
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
- H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
- H01L2224/29001—Core members of the layer connector
- H01L2224/29075—Plural core members
- H01L2224/2908—Plural core members being stacked
- H01L2224/29083—Three-layer arrangements
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
- H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
- H01L2224/29001—Core members of the layer connector
- H01L2224/29099—Material
- H01L2224/291—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2224/29101—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of less than 400°C
- H01L2224/29109—Indium [In] as principal constituent
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
- H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
- H01L2224/29001—Core members of the layer connector
- H01L2224/29099—Material
- H01L2224/291—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2224/29101—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of less than 400°C
- H01L2224/29111—Tin [Sn] as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
- H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
- H01L2224/29001—Core members of the layer connector
- H01L2224/29099—Material
- H01L2224/291—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2224/29101—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of less than 400°C
- H01L2224/29113—Bismuth [Bi] as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
- H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
- H01L2224/29001—Core members of the layer connector
- H01L2224/29099—Material
- H01L2224/291—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2224/29101—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of less than 400°C
- H01L2224/29116—Lead [Pb] as principal constituent
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- H—ELECTRICITY
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Abstract
本发明公开了一种导电连接材料30,其用于形成电子构件的多个端子11上的导电部,其中所述电子构件具有基板10和位于基板10上的多个端子11,所述导电连接材料30包含金属层110以及具有树脂成分和填料的树脂层120,其中通过使导电连接材料与多个端子接触并加热导电连接材料,使所述金属层聚集在各端子上,从而在所述多个端子上形成导电部。
Description
技术领域
本发明涉及导电连接材料、电子构件的制造方法、具有导电连接材料的电子构件和电子部件。
背景技术
近年,随着电子装置的高机能化和小型化的要求,电子材料的连接端子间的间距越来越窄,并且精细布线电路的端子间连接也已高端化。作为连接端子的方法,已知的有例如倒装芯片连接技术(flip chip connection technique),在所述技术中,当将IC芯片电连接于电路基板时,使用各向异性导电粘合剂或各向异性导电薄膜同时连接多个端子。这种非各向异性导电粘合剂或各向异性导电薄膜是在以热固性树脂为主成分的粘合剂中分散着导电性颗颗粒的薄膜或糊膏[参见,例如日本专利特开S 61-276873号公报(专利文献1)及日本专利特开2004-260131号公报(专利文献2)]。通过将其放置于待连接的电子构件间并实施热压接合,即可同时连接相对向的多个端子,并且通过粘合剂中的树脂即可确保相邻端子间的绝缘性。
但是,在现有的各向异性导电粘合剂或各向异性导电薄膜中,非常难以控制导电性颗粒的聚集。因此,会有下述问题:(1)由于导电性颗粒与端子或导电性颗粒彼此间并未充分接触,部分相对向端子未导通;和(2)在相对向端子间(导通性区域)以外区域的树脂中(绝缘性区域)留有导电性颗粒,导致漏电流,并因此导致在一些情况下无法充分确保相邻端子间的绝缘性。因而,通过使用常规的各向异性导电粘合剂或各向异性导电薄膜难以进一步窄化端子间的间距。
另一方面,在电子构件的电极上制造连接端子时,通常,在具有金属垫的基板上印刷焊膏,再使用回焊装置将焊膏加热熔融而形成连接端子。然而,在该方法中,如果连接端子的间距窄,则用于印刷焊膏所使用的掩体的成本便会提高。此外,如果连接端子的尺寸过小,则在一些情况下无法施行焊膏印刷。还存在通过将焊锡球搭载于连接端子,并使用回焊装置将焊球加热熔融,而制造连接端子的方法。但是,在该方法中,如果连接端子过小,制作焊锡球的成本会增加,且在一些情况下技术上难以制作小尺寸焊锡球。
相关文献
专利文献
专利文献1:日本专利特开S 61-276873号公报
专利文献2:日本专利特开2004-260131号公报
发明内容
在上述情况下,期望提供可确保相对向端子间的优异电连接以及相邻端子间高绝缘可靠性的导电连接材料。此外,还期望提供对具有多个端子的电子构件的连接、以及在电子构件的电极上形成连接端子有利的导电连接材料。
本发明提供了一种导电连接材料,其用于在电子构件的多个端子上形成导电部,所述电子构件具有基板和设置于基板上的多个端子,所述导电连接材料包括金属层,及含有树脂成分和填料的树脂层,其中通过使所述导电连接材料与多个端子接触并加热导电连接材料,使金属层聚集在各端子上,从而在多个端子上形成导电部。
为解决上述问题,本发明者经深入探讨,结果发现,取代使用其中分散有导电性颗粒的薄膜,改为使用具有金属层与树脂层的导电连接材料,便可使金属层容易地聚集在端子上。因此,根据本发明,可获得相对向端子间的优异电连接。另外,可抑制金属层在树脂层中的残留,并可在相邻端子间获得高绝缘可靠性。此外,通过加热导电连接材料使金属层聚集于各端子上,进而使具有多个端子的电子构件彼此容易地连接,并可在电子构件的多个电极上容易地形成连接端子。
本发明提供了一种电子部件的制造方法,所述方法包括将上述导电连接材料置于两个彼此相对的且其各自的多个端子朝向内侧的电子构件之间,并使导电连接材料与两个电子构件各自的多个端子接触的步骤;加热导电连接材料,使两个电子构件各自的多个端子通过在多个端子上形成的导电部而相互连接的步骤;以及硬化或固化树脂层的步骤。
本发明提供了一种电子部件的制造方法,当上述端子是电极而上述导电部是连接端子时,所述方法包括使上述导电连接材料与多个端子接触的步骤,加热上述导电连接材料从而在上述多个端子上形成导电部的步骤;以及硬化或固化树脂层的步骤。
本发明提供了一种具有导电连接材料的电子构件,其中使上述导电连接材料连接于电子构件的基板,从而与多个端子相接触。
本发明提供了一种电子部件,其中通过使用上述导电连接材料而形成的导电部,将两个彼此相对的且其各自的多个端子朝向内侧的电子构件所各自具有的多个端子相互连接。
发明效果
本发明可提供能确保相对向端子间的优异电连接和相邻端子间的高绝缘可靠性的导电连接材料,且其有利于具有多个端子的电子构件间的连接以及在电子构件的电极上形成连接端子。
附图说明
通过对某些优选实施方式的描述并结合附图,本发明的上述目的以及其它目的、优点及特征将更加明显。
图1为例示本发明所使用金属层的形状的一个实例的平面示意图。
图2为在本发明电子部件的连接方法中,在将导电连接材料置于端子间后,基板及导电连接材料的状态的一个实例的示意性剖视图。
图3为在本发明电子部件的连接方法中,对置于端子间的导电连接材料施行加热、硬化/固化后,基板、导电区域及绝缘区域的状态的一个实例的示意性剖视图。
图4为在本发明电子部件的连接方法中,在将导电连接材料置于端子间后,基板和导电连接材料的状态的一个实例的示意性剖视图。
图5为在本发明电子部件的生产方法中,在将导电连接材料置于设置在基板上的电极上后,基板和导电连接材料的状态的一个实例的示意性剖视图。
图6为在本发明电子部件的生产方法中,在将导电连接材料置于设置在基板上的电极后,基板和导电连接材料的状态的一个实例的示意性剖视图。
图7为在本发明电子部件的生产方法中,对置于基板的电极上的导电连接材料施行加热、硬化/固化后,基板、导电区域和绝缘区域的状态的一个实例的示意性剖视图。
发明内容
以下,针对本发明的导电连接材料、使用该导电连接材料连接电子部件的方法以及使用本发明的导电连接材料电连接的电子部件,分别进行详细说明。
1.导电连接材料
本发明的导电连接材料由树脂层和金属层构成,其形态是具有由树脂层与金属层构成的多层结构的积层体。每个树脂层和金属层均可由一层或多层构成。对于导电连接材料的积层结构并无特别的限制,其可为由树脂层与金属层组成的双层结构(树脂层/金属层),或者为其中树脂层和金属层中的一者或两者由多个层构成的三层结构或大于三层的多层结构。使用多个树脂层或金属层时,各层的组成可相同或不同。
在本发明的一个实施方式中,从利用具助焊剂功能的化合物还原金属层表面的氧化物层的角度出发,金属层的上层和下层优选为树脂层。例如,优选为三层结构(树脂层/金属层/树脂层)。在这种情况下,金属层两侧的树脂层厚度可相同或不同。树脂层的厚度可依照待连接的端子的导体厚度而适当调整。例如,当使用其中金属层两侧的树脂层厚度不同的导电连接材料生产连接端子时,优选将较薄的树脂层置于连接端子侧(电极侧)。通过缩短金属层与连接端子间的距离,可容易地控制金属层向连接端子部的聚集。
在本发明的另一实施方式中,例如,当在诸如半导体晶圆等的电子构件上生产连接端子时,由于部分金属层可被暴露,优选导电连接材料仅在金属层的单侧具有树脂层。当使用双层结构的导电连接材料连接相对向的连接端子时,导电连接材料可以如下方式放置:使树脂层侧与连接端子接触,或者使金属层侧与连接端子接触。当使用双层结构的导电连接材料连接相对向的电子构件的连接端子时,优选将导电连接材料结合于两个相对向的电子构件,然后使具有导电连接材料的电子构件相互连接。可依照金属层的图案形状而适当选择导电连接材料的方向。
以下,针对本发明所使用的树脂层和金属层分别进行说明。
(1)树脂层
本发明中,树脂层由含有树脂成分及填料的树脂组合物构成。树脂组合物可在常温下呈液状或固态状。在本文中,术语“常温下呈液状”表示在常温(25℃)下没有一定形态的状态,并且糊膏状也包含在其中。
本发明中,树脂组合物可以为硬化性树脂组合物或热塑性树脂组合物。本发明所使用的硬化性树脂组合物包括通过加热硬化的树脂组合物,或通过化学射线的照射而硬化的树脂组合物等。从硬化后的热膨胀系数与弹性模数等优异的机械特性的角度出发,优选使用热固性树脂组合物。对于本发明所使用的热塑性树脂组合物并无特别限制,只要其柔软性足以通过加热至既定温度而成型。
(a)硬化性树脂组合物
根据需要,除了硬化性树脂及填料外,本发明所使用的硬化性树脂组合物还可含有薄膜形成性树脂、硬化剂、硬化促进剂、具助焊剂功能的化合物、硅烷偶合剂等。
(i)硬化性树脂
对于本发明所使用的硬化性树脂并无特别的限定,只要其通常可以用作半导体装置制造用的粘合剂成分。所述硬化性树脂的实例包括环氧树脂、苯氧树脂、聚硅氧树脂、氧杂环丁烷树脂、酚树脂、(甲基)丙烯酸酯树脂、聚酯树脂(不饱和聚酯树脂)、邻苯二甲酸二烯丙酯树脂、马来酰亚胺树脂、聚酰亚胺树脂(聚酰亚胺前体树脂)和双马来酰亚胺-三嗪树脂等。尤其优选使用的是含有选自如下组中的至少之一的热固性树脂:环氧树脂、(甲基)丙烯酸酯树脂、苯氧树脂、聚酯树脂、聚酰亚胺树脂、聚硅氧树脂、马来酰亚胺树脂和双马来酰亚胺-三嗪树脂。其中,从优异的硬化性和存贮稳定性、硬化产品的优异耐热性、耐湿性及耐药性的角度出发,优选使用环氧树脂。这些硬化性树脂可单独使用或两种以上组合使用。
硬化性树脂的含量可根据硬化性树脂组合物的形态而适当设定。
例如当硬化性树脂组合物呈液状时,硬化性树脂的含量相对于硬化性树脂组合物总重量优选为10重量%以上,更优选为15重量%以上,还优选为20重量%以上,还更优选为25重量%以上,最优选为30重量%以上,且尤其为35重量%以上。同时,优选小于100重量%,更优选为95重量%以下,还优选为90重量%以下,还更优选为75重量%以下,最优选为65重量%以下,且尤其优选为55重量%以下。
当硬化性树脂组合物呈固态状时,硬化性树脂的含量相对于硬化性树脂组合物总重量优选为5重量%以上,更优选为10重量%以上,还优选为15重量%以上,且尤其优选为20重量%以上。同时,优选为90重量%以下,更优选为85重量%以下,还优选为80重量%以下,还更优选75重量%以下,最优选为65重量%以下,且尤其优选为55重量%以下。
当硬化性树脂的含量在上述范围内时,便可足以确保端子间的电连接强度及机械性接合强度。
在本发明中,可使用在室温下呈液状或呈固态状的任意环氧树脂。可同时使用室温下呈液状的环氧树脂与室温下呈固态状的环氧树脂。当硬化性树脂组合物呈液状时,优选使用室温下呈液状的环氧树脂。当硬化性树脂组合物呈固态状时,可使用室温下为液状或固态状的环氧树脂,但当使用固态状环氧树脂时,优选适当地与薄膜形成性树脂一起使用。
室温(25℃)下呈液状的环氧树脂的优选实例包括双酚A型环氧树脂和双酚F型环氧树脂等。可同时使用双酚A型环氧树脂和双酚F型环氧树脂。
室温下呈液状的环氧树脂的环氧当量优选为150~300g/eq,更优选为160~250g/eq,并且尤其优选为170~220g/eq。如果上述环氧当量小于上述下限,硬化产品的收缩率趋于变大,并在某些情况下引起翘曲。相反,如果超过上述上限,当与薄膜形成性树脂一起使用时,与薄膜形成性树脂特别是聚酰亚胺树脂间的反应性趋于降低。
室温(25℃)下呈固态状的环氧树脂的实例包括双酚A型环氧树脂、双酚S型环氧树脂、苯酚酚醛型环氧树脂、甲酚酚醛型环氧树脂、缩水甘油胺型环氧树脂、缩水甘油酯型环氧树脂、三官能环氧树脂和四官能环氧树脂等。其中,优选使用固态三官能环氧树脂和甲酚酚醛型环氧树脂等。这些环氧树脂可单独使用或两种以上组合使用。
室温下呈固态状的环氧树脂的环氧当量优选为150~3000g/eq,更优选为160~2500g/eq,并且尤其优选为170~2000g/eq。
室温下呈固态状的环氧树脂的软化点优选为40~120℃,更优选为50~110℃,并且尤其优选为60~100℃。如果上述软化点在上述范围内,便可抑制沾黏性,并可有利于操控。
(ii)填料
对于本发明所使用的填料并无特别的限制,只要在常温存贮时或加热时性能稳定且不引起变质,并且可使用无机填料或有机填料。填料可单独使用或两种以上组合使用。
无机填料的实例包括二氧化硅、氧化铝、氧化锌、氧化镁、氧化钛、氧化锑、氢氧化铝、氢氧化镁、氮化硼、碳酸钙、黏土、滑石、云母、玻璃纤维、玻璃碎片、玻璃珠和硫酸钡等,优选使用杂质尽可能少的二氧化硅和氧化铝。这些填料可单独使用或两种以上组合使用。
有机填料的实例包括纤维素、氟化树脂、环氧树脂、聚氨酯树脂(urethaneresin)、三聚氰胺树脂、酚树脂、丙烯酸树脂、聚酯树脂、苯乙烯树脂和苯乙烯丁二烯共聚物等。优选使用的是对树脂组合物的硬化产物的线性膨胀系数的降低效果大的环氧树脂和酚树脂。这些填料可单独使用或两种以上组合使用。
上述填料的形状优选为球状或鳞片状。特别地,因为球状填料的各向异性低,因此其具有优异的降低树脂组合物整体线性膨胀系数的能力,所以优选球状填料。填料的粒径优选为10nm以上,更优选为50nm以上,并且尤其优选为100nm以上。同时,优选为50μm以下,更优选为20μm以下,并且尤其优选为10μm以下。如果填料粒径小于上述下限值,则作业性和在树脂组合物中的分散性降低。相反,如果超过上述上限值,则由于相邻端子间存在填料会扩散,导致通过金属箔的端子间连接受到抑制。
填料的含量相对于硬化性树脂组合物总重量优选为1重量%以上,更优选为10重量%以上,且尤其优选为20重量%以上。同时,优选为80重量%以下,更优选为70重量%以下,且尤其优选为60重量%以下。如果填料含量小于上述下限值,则无法实现在硬化后降低树脂组合物的线性膨胀系数的效果。相反,如果超过上述上限值,则树脂组合物对粘合物的粘合力降低,并因此降低电子部件的可靠性,并使树脂组合物的流动性极端降低,导致无法成型。
此外,作为上述填料的含量,当上述填料的体积为Fv且金属层的体积为Mv时,Fv/Mv优选为0.01~10.0,更优选为0.02~8.0,并且尤其优选为0.05~5.0。如果Fv/Mv等于或大于上述下限值,便可有效地降低硬化后树脂组合物的线性膨胀系数,进而可提高电子部件的可靠性。同时,如果Fv/Mv等于或小于上述上限值,金属层便可在后文所述的加热步骤中确实地在树脂组合物中移动,从而可实现端子间的优异连接。
在具有由树脂层与金属层构成的积层结构的导电连接材料中,通过将填料混合入树脂层中,便可降低硬化后树脂层的线性膨胀系数,且可降低因部件安装或热循环试验时的加热所造成的热膨胀引起的施加至连接部的应力,进而可提高电子部件的可靠性。此外,如果混入有填料,则树脂层中的树脂成分含有率降低,因而可降低硬化后的树脂层的吸湿或吸水量,还可提高电子部件在吸湿条件下的耐热性。同时,填料的混入可抑制各端子上所聚集的金属层自端子上方区域向外流出。虽理由尚不明确,但认为由于在树脂层中混入了填料以保持金属层在各端子上的聚集,因此填料阻止了金属层自端子上方区域向外流出。因此,可提高电子部件的可靠性。
(iii)薄膜形成性树脂
当使用固态状硬化性树脂组合物时,优选将上述硬化性树脂与薄膜形成性树脂一起使用。对于本发明所使用的薄膜形成性树脂并无特别的限制,只要其可溶于有机溶剂中且单独具有成膜性。作为薄膜形成性树脂,可单独使用热塑性树脂或热固性树脂,或将其组合使用。具体的薄膜形成性树脂的实例包括(甲基)丙烯酸树脂、苯氧树脂、聚酯树脂(饱和聚酯树脂)、聚氨酯树脂、聚酰亚胺树脂、聚酰胺酰亚胺树脂、硅氧烷改性聚酰亚胺树脂、聚丁二烯树脂、聚丙烯树脂、苯乙烯-丁二烯-苯乙烯共聚物、苯乙烯-乙烯-丁烯-苯乙烯共聚物、聚缩醛树脂、聚乙烯丁醛树脂、聚乙烯缩醛树脂、丁基橡胶、氯丁二烯橡胶、聚酰胺树脂、丙烯腈-丁二烯共聚物、丙烯腈-丁二烯-丙烯酸共聚物、丙烯腈-丁二烯-苯乙烯共聚物、聚乙酸乙烯酯和尼龙等。其中,优选使用(甲基)丙烯酸树脂、苯氧树脂、聚酯树脂及聚酰亚胺树脂。薄膜形成性树脂可单独使用或两种以上组合使用。
本文使用的术语“(甲基)丙烯酸树脂”是指(甲基)丙烯酸及其衍生物的聚合物,或者(甲基)丙烯酸及其衍生物与其它单体的共聚物。因此,在描述“(甲基)丙烯酸”等时,其是指丙烯酸或甲基丙烯酸。
本发明所使用的(甲基)丙烯酸树脂的实例包括聚丙烯酸;聚甲基丙烯酸;聚丙烯酸酯,例如聚丙烯酸甲酯、聚丙烯酸乙酯、聚丙烯酸丁酯和聚(丙烯酸-2-乙基己酯)等;聚甲基丙烯酸酯,例如聚甲基丙烯酸甲酯、聚甲基丙烯酸乙酯和聚甲基丙烯酸丁酯等;聚丙烯腈;聚甲基丙烯腈;聚丙烯酰胺;丙烯酸丁酯-丙烯酸乙酯-丙烯腈共聚物;丙烯腈-丁二烯共聚物;丙烯腈-丁二烯-丙烯酸共聚物;丙烯腈-丁二烯-苯乙烯共聚物;丙烯腈-苯乙烯共聚物;甲基丙烯酸甲酯-苯乙烯共聚物;甲基丙烯酸甲酯-丙烯腈共聚物;甲基丙烯酸甲酯-α-甲基苯乙烯共聚物;丙烯酸丁酯-丙烯酸乙酯-丙烯腈-甲基丙烯酸-2-羟乙酯-甲基丙烯酸共聚物;丙烯酸丁酯-丙烯酸乙酯-丙烯腈-甲基丙烯酸-2-羟乙酯-丙烯酸共聚物;丙烯酸丁酯-丙烯腈-甲基丙烯酸-2-羟乙酯共聚物;丙烯酸丁酯-丙烯腈-丙烯酸共聚物;和丙烯酸乙酯-丙烯腈-N,N-二甲基丙烯酰胺共聚物等。其中,优选使用丙烯酸丁酯-丙烯酸乙酯-丙烯腈共聚物和丙烯酸乙酯-丙烯腈-N,N-二甲基丙烯酰胺共聚物。这些(甲基)丙烯酸树脂可单独使用或两种以上组合使用。
对于本发明所使用的苯氧树脂的骨架并无特别的限制,但优选使用双酚A型、双酚F型和联苯型等。
对于本发明所使用的聚酰亚胺树脂并无特别的限制,只要在重复单元中具有酰亚胺键。可举例如通过使二胺与酸二酐进行反应并将所获得的聚酰胺酸施行加热以引起脱水和环闭合而获得的那些。
上述二胺的实例包括芳香族二胺,例如3,3’-二甲基-4,4’-二胺基二苯基,4,6-二甲基间苯二胺和2,5-二甲基-对苯二胺等;以及硅氧烷二胺,例如1,3-双(3-氨基丙基)-1,1,3,3-四甲基二硅氧烷等。这些二胺可单独使用或两种以上组合使用。
上述酸二酐的实例包括3,3’,4,4’-联苯基四羧酸、均苯四甲酸二酐和4,4’-氧基二酞酸二酐等。这些酸二酐可单独使用或两种以上组合使用。
聚酰亚胺树脂可溶于溶剂中或不溶于溶剂中,但由于清漆在与其它成分相混时易于获得且具有优异的可操控性,优选使用可溶于溶剂中的聚酰亚胺树脂。尤其优选使用的是硅氧烷改性聚酰亚胺树脂,原因是其可溶于多种有机溶剂中。
本发明所使用的薄膜形成性树脂的重均分子量优选为8,000-1,000,000,更优选为8,500~950,000,且尤其优选为9,000~900,000。如果薄膜形成性树脂的重均分子量在上述范围内,便可提高制膜性,且能抑制硬化前导电连接材料的流动。另外,薄膜形成性树脂的重均分子量可利用GPC(凝胶渗透色层分析)进行测定。
在本发明中,可使用市售产品作为薄膜形成性树脂。并且,在不损坏本发明效果的范围内,可在薄膜形成性树脂中混入诸如增塑剂、稳定剂、抗静电剂、抗氧化剂和颜料的各种添加剂。
在本发明所使用的导电连接材料中,可根据所使用硬化性树脂组合物的形态而适当设定上述薄膜形成性树脂的含量。
例如在固态状硬化性树脂组合物的情况下,薄膜形成性树脂的含量相对于硬化性树脂组合物总重量优选为5重量%以上,更优选为10重量%以上,尤其优选为15重量%以上。同时,优选为50重量%以下,更优选为45重量%以下,尤其优选为40重量%以下。如果薄膜形成性树脂的含量在上述范围内,便可在熔融前抑制硬化性树脂组合物的流动性,并由此可促进导电连接材料的操控性质。
(iv)硬化剂
作为本发明所使用的硬化剂,优选使用酚类、酸酐及胺化合物。可根据硬化性树脂的种类等而适当选择硬化剂。例如,如果将环氧树脂用作硬化性树脂,从与环氧树脂间的优异反应性、硬化时尺寸的小变化和硬化后合适的物理性质(例如耐热性和耐湿性)的角度出发,优选使用酚类作为硬化剂,然而从硬化性树脂经硬化后的优异物理性质的角度出发,更优选使用双官能以上的酚类。此外,这些硬化剂可单独使用或两种以上组合使用。
上述酚类的实例包括双酚A、四甲基双酚A、二烯丙基双酚A、双酚、双酚F、二烯丙基双酚F、三酚、四酚、苯酚酚醛树脂和甲酚酚醛树脂等。其中,从与环氧树脂间的反应性优异以及经硬化后的优异物理性质的角度出发,优选使用苯酚酚醛树脂和甲酚酚醛树脂。
根据所使用的硬化性树脂或硬化剂的种类,并且在下文所述具有助焊剂功能的化合物具有发挥硬化剂功能的官能基时,根据所述官能基的种类和使用量,适当地选择硬化剂的含量。
例如,当将环氧树脂用作硬化性树脂时,硬化剂的含量相对于硬化性树脂组合物总重量优选为0.1~50重量%,更优选为0.2~40重量%,且尤其优选为0.5~30重量%。如果硬化剂的含量在上述范围内,则足以确保端子间的电连接强度及机械性接合强度。
(v)硬化促进剂
本发明所使用的硬化促进剂的实例包括咪唑化合物,例如咪唑、2-甲基咪唑、2-十一烷基咪唑、2-十七烷基咪唑、1,2-二甲基咪唑、2-乙基-4-甲基咪唑、2-苯基咪唑、2-苯基-4-甲基咪唑、1-苄基-2-苯基咪唑、1-苄基-2-甲基咪唑、1-氰乙基-2-甲基咪唑、1-氰乙基-2-乙基-4-甲基咪唑、1-氰乙基-2-十一烷基咪唑、1-氰乙基-2-苯基咪唑、1-氰乙基-2-十一烷基咪唑鎓偏苯三酸酯、1-氰乙基-2-苯基咪唑鎓偏苯三酸酯、2,4-二氨基-6-[2’-甲基咪唑基(1’)]-乙基-s-三嗪、2,4-二氨基-6-[2’-十一烷基咪唑基(1’)]-乙基-s-三嗪、2,4-二氨基-6-[2’-乙基-4-甲基咪唑基(1’)]-乙基-s-三嗪、2,4-二氨基-6-[2’-甲基咪唑基(1’)]-乙基-s-三嗪-异三聚氰酸加成物、2-苯基咪唑-异三聚氰酸加成物、2-甲基咪唑-异三聚氰酸加成物、2-苯基-4,5-二羟基二甲基咪唑和2-苯基-4-甲基-5-羟甲基咪唑等。
硬化促进剂的含量可根据所使用硬化促进剂的种类而适当设定。
例如,如果使用咪唑化合物,咪唑化合物的含量相对于硬化性树脂组合物总重量优选为0.001重量%以上,更优选为0.003重量%以上,且尤其优选为0.005重量%以上。同时,优选为1.0重量%以下,更优选为0.7重量%以下,且尤其优选为0.5重量%以下。如果咪唑化合物的含量小于上述下限,则无法充分发挥作为硬化促进剂的作用,并因此使硬化性树脂组合物在一些情况下不可充分硬化。相反,如果咪唑化合物的含量超过上述上限,则在硬化性树脂组合物完成硬化前金属层没有在端子表面完全移动,并且在绝缘区域残留有金属层,从而造成在一些情况下无法充分确保绝缘性。此外,在一些情况下,导电连接材料的存贮稳定性降低。
(vi)具助焊剂功能的化合物
本发明所使用具助焊剂功能的化合物具有还原金属氧化物层,例如端子和金属箔表面的氧化物层的作用。例如,作为具有具助焊剂功能的化合物,优选使用具酚羟基和/或羧基的化合物。具有酚羟基的化合物的实例包括含酚羟基的单体,例如苯酚、邻甲酚、2,6-二甲酚、对甲酚、间甲酚、邻乙酚、2,4-二甲酚、2,5-二甲酚、间乙酚、2,3-二甲酚、2,4,6-三甲酚、3,5-二甲酚、对叔丁基酚、邻苯二酚、对叔戊基酚、间苯二酚、对辛基酚、对苯基酚、双酚F、双酚AF、双酚、二烯丙基双酚F、二烯丙基双酚A、三酚和四酚等;含酚羟基的树脂,例如苯酚酚醛树脂、邻甲酚酚醛树脂、双酚F酚醛树脂和双酚A酚醛树脂等。
具有羧基的化合物的实例包括脂肪族酸酐、脂环式酸酐、芳香族酸酐、脂肪族羧酸和芳香族羧酸等。上述脂肪族酸酐的实例包括琥珀酸酐、聚己二酸酐、聚壬二酸酐和聚癸二酸酐等。上述脂环式酸酐的实例包括甲基四氢酞酸酐、甲基六氢酞酸酐、甲基腐植酸酐、六氢酞酸酐、四氢酞酸酐、三烷基四氢酞酸酐和甲基环己烯二羧酸酐等。上述芳香族酸酐的实例包括酞酸酐、偏苯三酸酐、均苯四甲酸酐、二苯基酮四羧酸酐、乙二醇双偏苯三酸酯和甘油三偏苯三酸酯等。
上述脂肪族羧酸的实例包括甲酸、醋酸、丙酸、丁酸、戊酸、三甲基乙酸、己酸、辛酸、月桂酸、肉豆蔻酸、棕榈酸、硬脂酸、丙烯酸、甲基丙烯酸、巴豆酸、油酸、富马酸、马来酸、草酸、丙二酸、琥珀酸、戊二酸、己二酸、癸二酸、十二烷二酸和庚二酸等。其中,优选为下式(1)所示脂肪族羧酸,更优选使用己二酸、癸二酸和十二烷二酸,
HOOC-(CH2)n–COOH(1)
其中,在式(1)中,n为1~20的整数。
对于芳香族羧酸的结构并无特别的限制,但优选使用下式(2)或(3)所示化合物:
[化学式1]
其中,在上式中,R1~R5分别独立地为单价有机基团;且R1~R5中至少之一是羟基,
[化学式2]
其中,在上式中,R6~R20分别独立地为单价有机基团;且R6~R20中至少之一为羟基或羧基。
芳香族羧酸的实例包括苯甲酸衍生物,例如苯甲酸、酞酸、异酞酸、对苯二甲酸、1,2,3-苯三甲酸、偏苯三甲酸、均苯三甲酸、偏苯四甲酸、连苯四甲酸、均苯四甲酸、苯六甲酸、二甲基苯甲酸、2,3-二甲基苯甲酸、2,4,6-三甲基苯甲酸(mesitylene acid)、2,3,4-三甲基苯甲酸、甲苯酸、肉桂酸、水杨酸、2,3-二羟基苯甲酸、2,4-二羟基苯甲酸、龙胆酸(2,5-二羟基苯甲酸)、2,6-二羟基苯甲酸、3,5-二羟基苯甲酸和没食子酸(3,4,5-三羟基苯甲酸)等;萘甲酸衍生物,例如1,4-二羟基-2-萘甲酸、3,5-二羟基-2-萘甲酸和3,5-2-二羟基-2-萘甲酸等;酚酞啉;和二酚酸等。
这些中,本发明中优选使用的是具有具助焊剂功能并且用作用于硬化性树脂的硬化剂的化合物。即,作为本发明中使用的具有具助焊剂功能的化合物,优选使用的是具有还原诸如金属层和端子的金属表面的氧化物层的作用,且具有能与硬化性树脂进行反应的官能基的化合物。所述官能基根据硬化性树脂的种类而适当选择。例如,如果将环氧树脂用作硬化性树脂,则该官能基优选能与环氧基进行反应,例如羧基、羟基和氨基。具有具助焊剂功能的化合物也用作硬化剂将诸如金属层和端子的金属表面的氧化物层还原,以提高金属表面的湿润性,并进而有利于导电区域的形成。此外,在形成导电区域后,通过将所述化合物加入至硬化性树脂中,可提高树脂的弹性模数或Tg。同时,通过将具助焊剂功能的化合物用作硬化剂,便不需要助焊剂清洗,且可抑制因助焊剂残留而导致的离子迁移的发生。
具有具助焊剂功能的此类化合物优选为至少具有一个羧基。例如,当将环氧树脂用作硬化性树脂时,该化合物的实例包括脂肪族二羧酸和具有羧基与酚羟基的化合物。
脂肪族二羧酸优选为脂肪族烃基上结合有2个羧基的化合物。脂肪族烃基可为饱和或不饱和的非环式,或者可为饱和或不饱和的环式。同时,当脂肪族烃基是非环式时,其可为直链状或分支状。
这种脂肪族二羧酸优选为在上式(1)中n为1~20的整数的化合物。如果上式(1)中的n在上述范围内,则助焊剂活性、接合时的逸气以及硬化后导电连接材料的弹性模数与玻璃转移温度间的均衡便会均呈优异。特别地,从可抑制硬化后导电连接材料的弹性模数增加并可提高与被粘合物间的粘合性的角度出发,n优选为3以上。此外,从可抑制弹性模数降低且可更进一步提高连接可靠性的事实看,n优选为10以下。
上式(1)所示脂肪族二羧酸的实例包括戊二酸、己二酸、庚二酸、辛二酸、壬二酸、癸二酸、十一烷二酸、十二烷二酸、十三烷二酸、十四烷二酸、十五烷二酸、十八烷二酸、十九烷二酸和二十烷二酸等。其中,优选为己二酸、辛二酸、癸二酸和十二烷二酸,尤其优选使用癸二酸。
上述具有羧基与酚羟基的化合物的实例包括苯甲酸衍生物,例如水杨酸、2,3-二羟基苯甲酸、2,4-二羟基苯甲酸、龙胆酸(2,5-二羟基苯甲酸)、2,6-二羟基苯甲酸、3,4-二羟基苯甲酸和没食子酸(3,4,5-三羟基苯甲酸)等;萘甲酸衍生物,例如1,4-二羟基-2-萘甲酸和3,5-二羟基-2-萘甲酸等;酚酞啉;和二酚酸等。其中,优选使用酚酞啉、龙胆酸、2,4-二羟基苯甲酸、2,6-二羟基苯甲酸,尤其优选使用酚酞啉和龙胆酸。
具助焊剂功能的化合物可单独使用或两种以上组合使用。此外,由于这些化合物均具有高吸湿性并引起孔隙,因而优选在使用前提前干燥所述具助焊剂功能的化合物。
具助焊剂功能的化合物的含量可根据所使用树脂组合物的形态而适当设定。
例如,当树脂组合物呈液状时,具助焊剂功能的化合物的含量相对于硬化性树脂组合物总重量优选为1重量%以上,更优选为2重量部%以上,且尤其优选为3重量%以上。同时,优选为50重量%以下,更优选为40重量%以下,还优选为30重量%以下,且尤其优选为25重量%以下。
在树脂组合物为固态状时,具助焊剂功能的化合物的含量相对于硬化性树脂组合物总重量优选为1重量%以上,更优选为2重量%以上,尤其优选为3重量%以上。同时,优选为50重量%以下,更优选为40重量%以下,还优选为30重量%以下,且尤其优选为25重量%以下。
如果具助焊剂功能的化合物的含量在上述范围内,便可将金属层和端子表面的氧化物层去除至能进行电连接的程度。此外,如果树脂组合物为硬化性树脂,在硬化时,所述化合物能高效地加入至树脂,从而提高树脂的弹性模数或Tg。此外,可抑制因未反应的具助焊剂功能的化合物所引发的离子迁移的发生。
(vii)硅烷偶合剂
本发明所使用的硅烷偶合剂的实例包括环氧硅烷偶合剂和含芳香环的氨基硅烷偶合剂等。通过添加硅烷偶合剂,可提高接合构件与导电连接材料间的粘合性。硅烷偶合剂可单独使用或两种以上组合使用。
硅烷偶合剂的含量可根据接合构件与硬化性树脂的种类而适当选择。例如,硅烷偶合剂的含量相对于硬化性树脂组合物总重量优选为0.01重量%以上,更优选为0.05重量%以上,且尤其优选为0.1重量%以上。同时,优选为2重量%以下,更优选为1.5重量%以下,且尤其优选为1重量%以下。
在不损害本发明效果的范围内,本发明所使用的硬化性树脂组合物中可混合入增塑剂、稳定剂、增粘剂、润滑剂、填料、抗静电剂、抗氧化剂或颜料等。
在本发明中,上述硬化性树脂组合物可通过使各成分混合和分散而制备。对于各成分的混合和分散方法并无特别的限定,可依照通常已知的方法进行混合和分散。
此外,在本发明中,上述各成分可在溶剂存在下或无溶剂下进行混合,以制备液状硬化性树脂组合物。此时所使用的溶剂并无特别的限定,只要其不与各成分反应。所述溶剂的实例包括酮类,例如丙酮、甲乙酮(MEK)、甲基异丁酮(MIBK)、二异丁酮(DIBK)、环己酮和二丙酮醇(DAA)等;芳香族烃类,例如苯、二甲苯和甲苯等;醇类,例如甲醇、乙醇、异丙醇和正丁醇等;溶纤剂类,例如甲基溶纤剂、乙基溶纤剂、丁基溶纤剂、甲基溶纤剂醋酸酯和乙基溶纤剂醋酸酯等;N-甲基-2-比咯烷酮(NMP)、四氢呋喃(THF)、二甲基甲酰胺(DMF)、二元酸酯(DBE)、3-乙氧基丙酸乙酯(EEP)和碳酸二甲酯(DMC)等。此外,溶剂的使用量的范围优选为溶剂中所混合的成分的固体浓度为10~60重量%的量。
(b)热塑性树脂组合物
在本发明中,热塑性树脂组合物也可以用作树脂组合物。
除了热塑性树脂和填料,本发明所使用的热塑性树脂组合物还可视需要而含有具助焊剂功能的化合物或硅烷偶合剂等。
(i)热塑性树脂
本发明所使用的热塑性树脂的实例包括醋酸乙烯酯、聚乙烯醇树脂、聚乙烯丁缩醛树脂、氯乙烯树脂、(甲基)丙烯酸树脂、苯氧树脂、聚酯树脂、聚酰亚胺树脂、聚酰胺酰亚胺树脂、硅氧烷改性的聚酰亚胺树脂、聚丁二烯树脂、丙烯酸树脂、苯乙烯树脂、聚乙烯树脂、聚丙烯树脂、聚酰胺树脂、纤维素树脂、异丁烯树脂、乙烯醚树脂、液晶聚合物树脂、聚苯硫醚树脂、聚苯醚树脂、聚醚砜树脂、聚醚酰亚胺树脂、聚醚醚酮树脂、聚氨酯树脂、苯乙烯-丁二烯-苯乙烯共聚物、苯乙烯-乙烯-丁烯-苯乙烯共聚物、聚缩醛树脂、聚乙烯缩醛树脂、丁基橡胶、氯丁二烯橡胶、丙烯腈-丁二烯共聚物、丙烯腈-丁二烯-丙烯酸共聚物、丙烯腈-丁二烯-苯乙烯共聚物和聚乙酸乙烯酯等。热塑性树脂可为单一聚合物,或者可为由两种以上上述热塑树脂组成的共聚物。
对于热塑性树脂的软化点并无特别的限制,但优选比构成导电连接材料的金属层熔点低10℃以上,更优选为低20℃以上,且尤其优选为低30℃以上。
此外,对于热塑性树脂的分解温度并无特别的限制,但优选比构成导电连接材料的金属层熔点高出10℃以上,更优选为高出20℃以上,且尤其优选为高出30℃以上。
热塑性树脂的含量可根据所使用的热塑性树脂组合物的形态而适当设定。
例如,如果热塑性树脂组合物呈液状,热塑性树脂的含量相对于热塑性树脂组合物总重量优选为10重量%以上,更优选为15重量%以上,还优选为20重量%以上,还更优选为25重量%以上,再更优选为30重量%以上,且尤其优选为35重量%以上。同时,优选为100重量%以下,更优选为95重量%以下,还优选为90重量%以下,还更优选为75重量%以下,再更优选为65重量%以下,且尤其优选为55重量%以下。
当热塑性树脂组合物呈固态状时,热塑性树脂的含量相对于热塑性树脂组合物总重量优选为5重量%以上,更优选为10重量%以上,还优选为15重量%以上,且尤其优选为20重量%以上。同时,优选为90重量%以下,更优选为85重量%以下,还优选为80重量%以下,还更优选为75重量%以下,再更优选为65重量%以下,且尤其优选为55重量%以下。
如果热塑性树脂的含量在上述范围内,便可充分确保端子间的电连接强度和机械性接合强度。
(ii)其它添加剂
本发明热塑性树脂组合物所使用的填料、具助焊剂功能的化合物、硅烷偶合剂以及其它的添加剂可以与在上述(a)硬化性树脂组合物部分中所描述的那些相同。各成分的含量、优选化合物以及生产方法也可以与在硬化性树脂组合物部分所描述的那些相同。
在本发明中,优选将硬化性树脂组合物用作树脂组合物。其中,相对于树脂组合物总重量,更优选为含有环氧树脂10~90重量%、填料1~80重量%、硬化剂0.1~50重量%、薄膜形成性树脂5~50重量%和具助焊剂功能的化合物1~50重量%。此外,相对于树脂组合物总重量,更优选为含有环氧树脂20~80重量%、填料10~70重量%、硬化剂0.2~40重量%、薄膜形成性树脂10~45重量%和具助焊剂功能的化合物2~40重量%。此外,尤其优选为相对于树脂组合物总重量含有环氧树脂35~55重量%、填料20~60重量%、硬化剂0.5~30重量%、薄膜形成性树脂15~40重量%和具助焊剂功能的化合物3~25重量%。
对于本发明的导电连接材料中的树脂层的厚度并无特别的限制,但优选为1μm以上,更优选为3μm以上,且尤其优选为5μm以上。同时,树脂层的厚度优选为200μm以下,更优选为150μm以下,且尤其优选为100μm以下。如果树脂层的厚度在上述范围内,便可将树脂组合物充分填充于相邻端子间的间隙中。因此,在树脂组合物硬化后,可足以确保固化后的机械粘合强度以及相对向端子间的电连接,还可进行连接端子的生产。
当本发明的导电连接材料含有多个树脂层时,各树脂层的组成可相同,或者可根据所使用的树脂成分的种类以及配方的不同而不同。各树脂层的熔融粘度与软化温度等物理性质可以相同或不同。例如,可将液状树脂层与固态状树脂层组合使用。
对于本发明的树脂层,优选在室温起至100℃下的平均线性膨胀系数为3~70ppm。在这种情况下,可降低因部件安装或热循环试验时的加热所造成的热膨胀引起的施加于电连接电子构件所用的连接部的应力。
(2)金属层
本发明的金属层是由金属箔构成的层。金属层可以形成于至少一部分树脂层俯视面上,或者可以形成于树脂层的整个表面。
对于金属层的形状并无特别的限制,可以以重复图案形成预定形状,或者形状可以为不规则形状。也可以是规则形状与不规则形状共存。图1是图示金属层的形状的一个实例的平面示意图。在树脂层120上形成具有各种形状的金属层110。如图1所示,金属层的形状的实例包括(a)虚线状的洞图案、(b)条纹图案、(c)波点图案、(d)矩形图案、(e)棋盘格图案、(f)框架状、(g)格子图案和(h)多画框图案。这些形状仅为实例的一部分,并且可以根据目的和应用而对这些形状进行组合或修饰。
在本发明的一个实施方式中,当将整个格型的粘合物进行连接从而将待连接的电极置于粘合物的整个连接表面时,优选在树脂层的整个表面上形成薄片状金属层。
此外,当将外周型粘合物连接从而使待连接的电极置于粘合物的连接表面周边时,从有效利用金属层和相邻电极间的残留金属层的存在角度出发,优选在至少一部分树脂层上形成重复图案的金属层。在这种情况下,可以根据电极的间距和形态等而适当地选择金属层的形状。
本发明所使用的金属层优选在金属层的表面具有氧化物层,其能够通过具有助焊剂功能的化合物的还原作用而除去。所述金属层优选为由选自以下组的至少两种或更多种金属的合金制成:锡(Sn)、铅(Pb)、银(Ag)、铋(Bi)、铟(In)、锌(Zn)、镍(Ni)、锑(Sb)、铁(Fe)、铝(Al)、金(Au)、锗(Ge)和铜(Cu),或由锡单独制成。
在这些中,考虑到熔融温度和机械性质,作为金属层,更优选使用的是由诸如Sn-Pb合金、属于无铅焊料的Sn-Bi合金、Sn-Ag-Cu合金、Sn-In合金和Sn-Ag合金的含Sn合金构成的焊锡箔(solder foils)。当使用Sn-Pb合金时,锡的含量优选为30重量%以上且小于100重量%,更优选为35重量%以上且小于100重量%,并且尤其优选为40重量%以上。同时,优选小于100重量%。此外,在使用无铅焊料时,锡的含有率优选为15重量%以上且小于100重量%,更优选为20重量%以上且小于100重量%,且尤其优选为25重量%以上且小于100重量%。Sn-Pb合金的优选实例包括Sn63-Pb(熔点:183℃)、Sn-3.0Ag-0.5Cu(熔点:217℃)、Sn-3.5Ag(熔点:221℃)、Sn-58Bi(熔点:139℃)、Sn-9.0Zn(熔点:199℃)、Sn-3.5Ag-0.5Bi-3.0In(熔点:193℃)和Au-20Sn(熔点:280℃)等。
金属层根据待连接的电子构件与半导体装置的耐热性而适当选择。例如,对于半导体装置中的端子间的连接,为防止半导体装置的构件因热经历而遭受损坏,优选使用熔点330℃以下(更优选为300℃以下,尤其优选为280℃以下,还进一步优选为260℃以下)的金属层。此外,为确保半导体装置在端子间连接后的耐热性,优选使用熔点100℃以上(更优选为110℃以上且尤其优选为120℃以上)的金属层。金属层的熔点可利用微分扫描热量计(DSC)进行测定。
金属层的厚度可根据相对向端子间的间隙和相邻端子间的距离等而适当选择。例如,在半导体装置中的半导体芯片、基板和半导体晶圆等各连接端子间的连接时,金属层的厚度优选为0.5μm以上,更优选为3μm以上并且尤其优选为5μm以上。同时,优选为100μm以下,更优选为50μm以下并且尤其优选为20μm以下。如果金属层的厚度小于上述下限,则未连接端子数由于构成导电部用金属的缺乏而趋增加。相反,如果厚度超过上述上限,则由于金属过剩而导致相邻端子间引发桥接,进而易于导致短路的倾向。
金属层的制作方法的实例包括通过轧延铸铁等块体制备金属层的方法,以及通过对树脂层进行直接蒸镀、溅镀或电镀等而形成金属层的方法。此外,具有重复图案的金属层的制作方法的实例包括将金属层冲孔为预定图案的方法、通过蚀刻等形成预定图案的方法,以及使用遮蔽板或掩体等通过蒸镀、溅镀、电镀等形成金属层的方法。
金属层的含量相对于导电连接材料总重量优选为5重量%以上,更优选为20重量%以上,且尤其优选为30重量%以上。同时,优选为小于100重量%,更优选为80重量%以下,并且尤其优选为70重量%以下。如果金属层的含量小于上述下限,则在一些情况下由于构成导电部用的金属不足,会导致未连接端子增加。相反,如果金属层含量超过上述上限,则由于金属过量而导致相邻端子间的桥接趋于容易发生。
或者,可通过相对于导电连接材料的体积比率定义金属层的含量。例如,金属层的含量相对于导电连接材料,优选为1体积%以上,更优选为5体积%以上,且尤其优选为10体积%以上。同时,优选为90体积%以下,更优选为80体积%以下,且尤其优选为70体积%以下。如果金属层的含量小于上述下限,则构成导电部用的金属不足,导致未连接端子趋于增加。相反,如果金属层含量超过上述上限,则由于过剩金属导致相邻端子间桥接趋于易于发生。
在本发明中,导电连接材料的形态可根据树脂组合物的形态等而适当选择。例如,在树脂组合物呈液状的情况下,出于半硬化(B-阶段)等目的在预定温度进行干燥和制膜,然后将金属层粘合于其上而形成薄膜等,从而提供作为导电连接材料的金属层双面涂布有树脂组合物的产品,或者诸如聚酯薄片的剥离基材的表面涂布有树脂组合物的产品。当树脂组合物呈固态状的情况下,在预定温度下干燥,然后使金属层粘合于其上,或者进行蒸镀等而形成薄膜,从而提供用作导电连接材料的诸如聚酯薄片的剥离基材上涂布有溶解于有机溶剂中的树脂组合物清漆的产品。
此外,为增强与端子的接触,本发明的导电连接材料和用于导电连接材料的金属层可被浮雕加工。
对于本发明的导电连接材料的厚度并无特别的限制,优选为1μm以上,更优选为3μm以上,并且尤其优选为5μm以上。同时,优选为200μm以下,更优选为150μm以下,并且尤其优选为100μm以下。如果导电连接材料的厚度在上述范围内,便可用树脂组合物充分填充相邻端子间的间隙。此外,可充分确保树脂成分硬化后或固化后的机械粘合强度以及彼此对向的端子间的电连接。此外,亦可根据目的与用途生产连接端子。
在下文中,将对导电连接材料的生产方法进行描述。
当本发明所使用的树脂组合物在25℃下呈液状时,例如将金属层浸渍于液状的树脂组合物中,从而使液状树脂组合物粘合在金属层的双面,由此生产本发明的导电连接材料。如果必需控制树脂组合物的厚度,利用诸如使浸渍于液状树脂组合物中的金属层经过具一定间隙的棒涂布机的方法,或者将液状树脂组合物利用喷雾涂布机等进行喷涂的方法,用于生产导电连接材料。
如果本发明所使用的树脂组合物在25℃下呈薄膜状,例如,可以按照如下所述方法生产导电连接材料。首先,将溶解于有机溶剂中的树脂组合物的清漆涂布于诸如聚酯薄片等剥离基材上,并在预定温度下干燥和制膜,以制得薄膜状树脂组合物。接着,制备形成于剥离基材上的两片树脂组合物薄膜,并将金属层包夹在待利用热辊施行层压的两个片间,由此制备具有三个层的导电连接材料,所述三个层由树脂层、金属层和树脂层构成,其中树脂层被置于金属层的两面。此外,如果利用上述层压方法将树脂层置于金属层的一面,可以制备由树脂层和金属层构成的双层导电连接材料。
在使用轧制的金属层时,将金属层用作基板,并将上述薄膜状树脂组合物置于利用热辊施行层压的金属层的两面或一面,由此获得卷筒状导电连接材料。此外,在使用轧制的金属层时,在金属层的两面或一面直接涂布清漆状树脂组合物,并使溶剂挥发,由此制备轧制的导电连接材料。
在使用图案状金属层制作导电连接材料时,将金属层置于剥离基材上,并利用模具(die)从金属层侧对半切割金属层,并将多余的金属层除去,由此制得图案状金属层。然后,可以利用热辊将上述薄膜状树脂组合物层压于其上。当图案状金属层的两面上设置有树脂层时,将剥离基材撕开,并在图案状金属层已形成有树脂层的面的对面上进一步层压薄膜状树脂组合物。
导电连接材料的生产方法并不仅局限于上述方法。本领域技术人员可根据目的与用途适当选择导电连接材料的生产方法。
2.生产电子部件的第一方法
在下文中将对本发明生产电子部件的第一方法进行描述。
本发明的生产电子部件的第一方法涉及使用上述导电连接材料连接端子的方法,并且包括将导电连接材料置于两个彼此相对的且其各自具有的多个端子朝向内侧的电子构件之间,并使导电连接材料与两个电子构件各自的多个端子接触的步骤;对上述导电连接材料施行加热,并通过在多个端子上所形成的导电部,将两个电子构件各自所具有的多个端子相接的加热步骤;以及硬化或固化上述树脂层的硬化/固化步骤。在例如连接在半导体晶圆、半导体芯片、刚性基板、挠性基板和其它电子构件中所形成的端子时,可以使用本发明的生产电子部件的第一方法。
在本发明的生产电子部件的第一方法中,在导电连接材料的树脂组合物为硬化性树脂组合物时的连接方法中涉及的步骤,与树脂组合物是热塑性树脂组合物时的连接方法中涉及的步骤略有不同。在下文中,将导电连接材料的树脂层具有硬化性树脂的情况称为第一实施方式,将树脂层具有热塑性树脂的情况称为第二实施方式,并且这些实施方式将独立进行描述。
(1)第一实施方式
在本发明第一实施方式的生产电子部件的第一方法中,使电子构件相互连接的步骤是通过在金属层熔点以上且树脂层硬化尚未完成的温度下加热导电连接材料而实施的;而硬化或固化树脂层的步骤是通过在完成树脂层硬化的温度下加热导电连接材料而实施的。
根据该生产方法,可在端子间选择性地聚集经加热熔融的金属层从而形成导电区域,并在导电区域周围由硬化性树脂组合物形成绝缘区域。结果,可通过确保相邻端子间的绝缘性而防止漏电,并因此可改善端子间连接的连接可靠性。此外,可在细微的布线电路中电连接多个端子,并促进具有多个端子的电子构件间的连接。此外,通过使硬化性树脂组合物硬化,可提高导电区域或绝缘区域的机械强度。
以下,将参照附图对本发明第一实施方式的生产电子部件的第一方法的优选实施方式进行详细描述,但本发明的连接方法并不仅局限于附图。
(a)放置步骤
首先,如图2所示,使设有多个端子11的基板10与设有多个端子21的基板20,以多个端子11与多个端子21相对向的方式进行放置。然后,在这些端子间,放置具备金属层110和树脂层120的导电连接材料30,所述树脂层120由设置于金属层110两面的硬化性树脂组合物构成。在这种情况下,如图4所示,可使用复膜机或压合机等装置,通过预先热压将导电连接材料30连接至基板10和基板20两者之一或其两者。此外,为了提供良好的电连接,如果需要,端子11与21的表面可经受诸如清洗、研磨、电镀和表面活化的处理。然后,使导电连接材料30与多个端子11和多个端子21相接触。
(b)加热步骤
在加热步骤中,将在上述放置步骤中置于端子间的导电连接材料30,在金属层110的熔点以上的温度下加热。加热温度可为金属层110的熔点以上。例如,对于上限并无特别的限制,只要温度在金属层110能在硬化性树脂中移动的范围内,也即通过调整加热时间(例如,缩短加热时间)使由硬化性树脂组合物构成的树脂层120的硬化没有完成。加热温度优选为较金属层110的熔点高出5℃以上的温度,更优选为高出10℃以上的温度,还优选为高出20℃以上的温度,并且尤其优选高出30℃以上的温度。
加热温度可根据所使用的金属层及硬化性树脂组合物的组成而适当选择,但优选为100℃以上,更优选为130℃以上,尤其优选为140℃以上,且最优选为150℃以上。为防止待连接的基板等发生热恶化,加热温度优选为260℃以下,更优选为250℃以下,并且尤其优选为240℃以下。
如果在上述温度下加热导电连接材料30,则金属层110熔融并且熔融的金属层110可在由硬化性树脂组合物构成的树脂层120中移动。熔融的金属层110由于其湿润性而聚集于端子11与21上。因此,如图3所示,在上述端子间形成导电部130,并由此使端子11与21电连接。在本文中,在端子上的聚集表示金属层110俯视面的面积比最初的面积增大或缩小,并且还表示金属层110移动至端子11和21上,从而具有用于连接端子11和21的优异形状。因此,涵盖金属层110的俯视面面积缩小的情况和扩大的情况。另一方面,在导电部130的周围填充硬化性树脂组合物,以形成绝缘区域140。结果,可确保相邻端子间的绝缘性,并防止相邻端子间的短路。即,导电连接材料30与多个端子11和21接触,并施行加热,由此具有各向异性电导率。
当硬化性树脂组合物含有具助焊剂功能的化合物时,通过硬化性树脂组合物所含的具助焊剂功能的化合物的还原作用,金属层110表面的氧化物层被除去,并由此使金属层110的湿润性得到改善且金属结合得到促进,从而有利于在相对向端子间的聚集。另一方面,通过具助焊剂功能的化合物的还原作用,端子11与21表面氧化物层也被除去,从而提高湿润性。因此,有利于与金属层110间的金属结合。
在本发明生产电子部件的第一方法中,可以在压力下进行加热,从而使相对向端子间的距离缩短。例如,通过利用诸如公知的热压结合装置的方式加热并朝图2中的基板10相对向于基板20的方向施压,便可将相对向端子间的距离控制为恒定,并可提高相对向端子间的电连接可靠性。
此外,在加压或加热时,可施加超音波或电场等,或亦可采用诸如雷射和电磁感应的特殊加热。
(c)硬化步骤
在本发明生产电子部件的第一方法中,在上述加热步骤中形成导电区域130与绝缘区域140后,使硬化性树脂组合物硬化,从而固定绝缘区域140。因此,可充分确保端子间的电可靠性及机械连接强度。特别是在本发明生产电子部件的第一方法中,因为使用具高绝缘电阻值的硬化性树脂组合物,可更加充分地确保绝缘性区域的绝缘性。
硬化性树脂组合物的硬化可通过对导电连接材料30施行加热而实施。导电连接材料30的硬化温度可根据硬化性树脂组合物的组成而适当设定,但优选为较上述加热步骤中的加热温度至少低5℃的温度,并且尤其优选为至少低10℃的温度。具体而言,硬化温度优选为100℃以上,更优选为120℃以上,尤其优选为130℃以上,且最优选为150℃以上。同时,优选为300℃以下,更优选为260℃以下,尤其优选为250℃以下,且最优选为240℃以下。如果硬化温度在上述范围内,便不会使导电连接材料30热分解,并且可使硬化性树脂组合物充分硬化。
(2)第二实施方式
在下文中,将对本发明第二实施方式的生产电子部件的第一方法进行说明。在本发明第二实施方式的生产电子部件的第一方法中,使电子构件相互连接的步骤是通过在金属层熔点以上且树脂层被软化的温度下加热导电连接材料而进行的;而硬化或固化树脂层的步骤是通过将导电连接材料冷却至树脂层固化的温度而进行的。
(a)放置步骤
在使用含有热塑性树脂组合物和金属层110的导电连接材料30的情况下,可以以与使用含有硬化性树脂组合物和金属层110的导电连接材料30的情况相同的方式,放置导电连接材料30。
(b)加热步骤
对于加热步骤并无特别的限制,但在金属层110的熔点以上加热在上述放置步骤中置于端子间的导电连接材料30。加热温度优选为较金属层熔点高出5℃以上的温度,更优选为高出10℃以上的温度,还优选为高出20℃以上的温,且尤其优选高出30℃以上的温度。对于加热温度的上限并无特别的限制,只要在金属层110的熔点以上,且所述温度在由热塑性树脂组合物构成的树脂层120被软化从而使金属层110能够在由热塑性树脂构成的树脂层120中进行移动的范围内,即由热塑性树脂组合物构成的树脂层120被软化的范围内。
加热温度可依照所使用的金属层及热塑性树脂组合物的组成而适当选择。例如,可在与含有硬化性树脂组合物和金属层的导电连接材料相同的加热温度下施行加热。
如果在上述温度加热导电连接材料30,则金属层110熔融,并且熔融的金属层110可在由热塑性树脂组合物构成的树脂层120中移动。熔融的金属层110由于其湿润性而聚集于端子11与21上。因此,如图3所示,在上述端子间形成导电部130,并由此使端子11与21电连接。另一方面,在导电部130的周围填充热塑树脂组合物,以形成绝缘区域140。结果,可确保相邻端子间的绝缘性,并可防止相邻端子间的短路。即,导电连接材料30与多个经加热由此具有各向异性电导率的端子11和21接触。
当热塑性树脂组合物含有具助焊剂功能的化合物时,通过热塑性树脂组合物中所含具助焊剂功能的化合物的还原作用,金属层110表面的氧化物层被除去,并由此改善金属层110的湿润性,且促进金属结合,从而有利于在相对向端子间的聚集。另一方面,通过具助焊剂功能的化合物的还原作用,端子11与21表面的氧化物层也被除去,从而提高湿润性。因此,有利于与金属层110间的金属结合。
(c)固化步骤
在本发明生产电子部件的第一方法中,在上述加热步骤中形成导电区域130和绝缘区域140后,使热塑性树脂组合物固化,从而固定绝缘区域140。因此,可充分确保端子间的电可靠性和机械连接强度。
可通过将在上述加热步骤中加热并熔融的导电连接材料30予以冷却或固化,实施热塑性树脂组合物的固化。导电连接材料30的冷却或固化可根据热塑性树脂组合物的组成而适当设定,并无特别的限制。可采取自然冷却的方法。或者,也可采取喷冷气等的方法。
对于上述热塑性树脂组合物的固化温度并无特别的限制,但优选为低于金属层110的熔点。更具体而言,热塑性树脂组合物的固化温度优选为较金属层110的熔点低10℃以上,尤其优选为低20℃以上。同时,热塑性树脂组合物的固化温度优选为50℃以上,尤其优选为60℃以上,且还优选为100℃以上。如果上述热塑性树脂组合物的固化温度在上述范围内,可确实地形成导电部130,且绝缘区域140可具有所需耐热性。因此,可确保相邻端子间的绝缘性,且可更确实地防止相邻端子间的短路。
在本发明生产电子部件的第一方法中,使用由树脂层和金属层构成的导电连接材料。因此,通过对导电连接材料施行加热,便可将金属层选择性地聚集于相对向的端子间。结果使电连接相对向的端子,且确保相邻端子间的绝缘性。此外,在诸如半导体装置等的细微布线电路中,可使多个端子同时电导通,并有利于可靠性优异的端子间连接。
3.生产电子部件的第二方法
在下文中,将对本发明生产电子部件的第二方法进行说明。
本发明生产电子部件的第二方法包括使导电连接材料与多个端子接触的放置步骤;加热导电连接材料而在多个端子上形成导电部的加热步骤;以及对树脂层进行硬化或固化的硬化/固化步骤。生产电子部件的第二方法涉及,例如使用上述导电连接材料在电子构件的电极上生产连接端子的方法。在这种情况下,上述端子是例如电极。此外,上述导电部是例如连接端子。可在例如半导体晶圆、半导体芯片、刚性基板、可挠性基板和其它电子部件的电极上生产连接端子时,使用本发明生产电子部件的第二方法。
在本发明的生产电子部件的第二方法中,在导电连接材料的树脂组合物为硬化性树脂组合物时用于连接端子的生产步骤,与在树脂组合物是热塑性树脂组合物时用于连接端子的生产步骤略有不同。在下文中,将导电连接材料的树脂层是硬化性树脂的情况称为为第一实施方式,将树脂组合物是热塑性树脂的情况称为第二实施方式,并且这些实施方式将独立描述。
(1)第一实施方式
在本发明第一实施方式的生产电子部件的第二方法中,形成导电部的步骤是通过在金属层熔点以上且树脂层尚未完成硬化的温度下加热导电连接材料而进行的;而硬化或固化树脂层的步骤是通过在树脂层完成硬化的温度下加热导电连接材料而进行的。
在生产电子部件的第二方法中,可使加热且熔融的金属层选择性地聚集于基板上的电极上,从而形成连接端子,并通过连接端子周围的硬化性树脂组合物形成绝缘区域。结果,连接端子的周围覆盖有硬化性树脂组合物,并因此使导电性区域被固定。此外,因为通过绝缘区域确保相邻连接端子间的绝缘性质,可提高连接可靠性。根据该方法,可在细微的布线电路中同时产生多个连接端子,并有利于在电极上形成连接端子。
在下文中,将参考附图对本发明第一实施方式的生产电子部件的第二方法的最佳实施方式进行详细说明。然而,本发明生产电子部件的第二方法并不限于附图。
(a)放置步骤
首先,如图5所示,将具有由硬化性树脂组合物构成的树脂层120和金属层110的导电连接材料50,置于已设有多个电极41的基板40上。在这种情况下,当使用图案状金属层110时,必需使导电连接材料50与基板40上的电极41进行位置调整。在图5中,使用在金属层110的一个表面形成的由硬化性树脂组合物构成的树脂层120,但由硬化性树脂组合物构成的树脂层120可形成于金属层110的两面。此外,在图5中,以使由硬化性树脂组合物构成的树脂层120与电极41呈相对向的方式放置导电连接材料50,但也可以使金属层110与电极41呈相对向的方式放置导电连接材料50。
如图5所示,可使用复膜机或压合机等装置,通过热压使导电连接材料50连接至基板40上。图6中,电极41覆盖有由硬化性树脂组合物构成的树脂层120,但由热固性树脂组合物构成的树脂层120的厚度可小于或大于电极41的厚度,并可根据目的及用途而适当调整。此外,为了提供良好的电连接或为了改善与金属层110的粘合性质,如果需要,电极41的表面可经历诸如清洗、研磨、电镀及表面活化的处理。
(b)加热步骤
在加热步骤中,在金属层110的熔点以上且上述硬化性树脂组合物尚未完成硬化的温度下,加热在上述放置步骤中置于基板40上的电极41上的导电连接材料50。因此,如图7所示,可在电极41上形成连接端子150。另一方面,在连接端子150的周围填充硬化性树脂组合物,以形成绝缘区域140。结果,可确保相邻连接端子150间的绝缘性,并可防止相邻连接端子150间的短路。
硬化性树脂组合物的加热温度及加压条件,可以与生产电子部件的第一方法中使用具有硬化性树脂组合物和金属层的上述导电连接材料连接端子情况下的条件相同。
(c)硬化步骤
在硬化步骤中,在上述加热步骤中形成连接端子150和绝缘区域140后,使硬化性树脂组合物硬化,从而固定绝缘区域140。因此,可以补强基板40上的电极41与连接端子150间的粘合。特别是本发明第一实施方式中,因为使用具高绝缘电阻值的硬化性树脂组合物,可更充分地确保绝缘区域的绝缘性。虽无特别限制,但优选在形成连接端子150且将基板60安装于待连接的另一电子部件或基板上后,实施该硬化步骤。
硬化步骤中的导电连接材料的加热温度可以与生产电子部件的第一方法中使用具有硬化性树脂组合物和金属层的导电连接材料连接端子的情况下的加热温度相同。
(2)第二实施方式
在下文中,将对本发明第二实施方式的生产电子部件的第二方法进行说明。
在本发明第二实施方式的生产电子部件的第二方法中,形成导电部的步骤是通过在金属层的熔点以上且树脂层软化的温度下加热导电连接材料而进行的;而硬化或固化树脂层施行的步骤是通过将导电连接材料冷却至树脂层会固化的温度而进行的。
在第二实施方式的制造方法,可使加热且熔融的金属层选择性地聚集于基板上的电极上,从而形成连接端子,并通过在连接端子周围的热塑性树脂组合物形成绝缘区域。结果,连接端子周围覆盖有热塑性树脂组合物,并因此固定导电区域。此外,因为通过绝缘区域确保相邻连接端子间的绝缘性,可提高连接可靠性。根据该方法,可在细微的布线电路中同时产生多个连接端子。
(a)放置步骤
在使用含有热塑性树脂组合物和金属层的导电连接材料的情况下,可以与第一实施方式使用含硬化性树脂组合物和金属层的导电连接材料的情况相同的方式,将导电连接材料置于设有电极的基板上。
(b)加热步骤
在加热步骤中,在金属层110的熔点以上且由热塑性树脂组合物构成的树脂层120被软化的温度下,加热在上述放置步骤中置于基板上所设置的电极上的导电连接材料50。因此,可以以与第一实施方式相同的方式,在电极41上制备连接端子150。另一方面,在连接端子150的周围填充热塑性树脂组合物,从而形成绝缘区域140。结果,可确保相邻连接端子150间的绝缘性,并可防止相邻连接端子150间的短路。
热塑性树脂组合物的加热温度及加压条件可以与生产电子部件的第一方法中使用具有热塑性树脂组合物和金属箔的上述导电连接材料连接端子情况下的加热温度及加压条件相同。
(c)固化步骤
在固化步骤中,在上述加热步骤中形成连接端子150和绝缘区域140后,使热塑性树脂组合物冷却并固化,从而固定绝缘区域140。因此,可补强电极41与连接端子150间的粘合。
热塑性树脂组合物的冷却方法及优选的固化温度,与生产电子部件的第一方法中使用具有热塑性树脂组合物和金属层的上述导电连接材料连接端子的情况下的冷却方法和优选固化温度相同。
如上述,在本发明生产电子部件的第二方法中,通过使用本发明的导电连接材料,可使金属层选择性地聚集于形成有连接端子的区域,并因此可使用简便的方法生产连接端子。根据本发明生产电子部件的第二方法,可在诸如半导体装置的细微布线电路中同时生产多个连接端子。此外,可在多个连接端子的周围形成绝缘区域,从而可固定连接端子并可确保相邻连接端子间的绝缘性质。因此,可有利于生产具有优异的连接可靠性的连接端子。
4.具有导电连接材料的电子构件和电子部件
本发明还包括具有导电连接材料的电子构件,其中在所述电子构件形成有多个端子的电连接面上结合有本发明的导电连接材料。在本发明具有导电连接材料的电子构件中,导电连接材料待与电子构件的电连接面粘合的面优选为树脂层。该树脂层可直接结合于电子构件的电连接面上,或者可经由粘合剂层进行结合。通过使本发明具有导电连接材料的电子构件相互结合,或者通过使本发明具有导电连接材料的电子构件结合于待经历热压结合的另一类型的电子构件的电连接面,便可将此类电子构件相互电连接。
本发明还包括其中的电子构件使用本发明以上述方式获得的导电连接材料而电连接的半导体晶圆、半导体芯片、刚性基板、可挠性基板和其它电子部件。
实施例
以下,参考实施例对本发明进行说明。然而,本发明并不仅局限于下述实施例。
[实施例1~7]
(1)硬化性树脂组合物的生产
将表1所示各成分溶解于甲乙酮(MEK)中,以获得树脂固含量为40%的树脂组合物清漆。使用逗点式涂布仪将所获得的清漆涂布于聚酯薄片上,并在90℃干燥5分钟,获得厚度30μm的薄膜状硬化性树脂组合物。
(2)树脂组合物的热膨胀系数的测定
将(1)中获得的硬化性树脂组合物在180℃硬化1小时,从而获得样本。利用热机械分析装置(TMA,SS6100,商购自Seiko Instruments Inc.),依照拉应力法(tensile stress method)在升温速度为10℃/min且荷重为50mN的条件下,使用所述样本测定树脂组合物的热膨胀系数。将室温起至100℃的热膨胀系数的平均值作为测定值。
(3)导电连接材料的生产
在60℃、2kgf/cm2和0.3m/min的条件下,将所获得的薄膜状硬化性树脂组合物层压于表1所示焊锡箔的两面上,以产生厚度为70μm的导电连接材料。
(4)端子间连接
接着,使用所获得的导电连接材料连接基板上的端子。制备由FR-4基材(厚度0.1mm)和电路层(铜电路,厚度12μm)构成且在铜电路上具有通过Ni/Au电镀(厚度3μm)而形成的连接端子(端子径100μm、相邻端子间的中心距离200μm)的2片基板,并用于连接。在具有连接端子的所述基板间放置上述导电连接材料,并使用热压结合装置(TMV1-200ASB,商购自TsukubaMechanics Co.,Ltd.),在230℃、0.5MPa和120秒的条件下进行热压结合(基板间间隙50μm),从而连接端子。然后,通过在180℃加热1小时硬化硬化性树脂组合物,从而获得积层体。
比较例1
以与实施例1同样的方式制备不含填料的硬化性树脂组合物,并将所获得的厚度为30μm的硬化性树脂组合物层压于表1所示的焊锡箔的两面上,从而产生厚度为70μm的导电连接材料。此外,按照与实施例1同样的方法(上述(4)端子间连接所记载的方法),使用所获得的导电连接材料使基板的端子相互连接。
在各实施例和比较例所获得的积层体中,利用下述方法评估相对向端子间的连接电阻、相对向端子间的导通路的形成性以及冷热循环试验后的导通电阻。
[1]相对向端子间的连接电阻
利用四端子法(电阻计:数字式万用表VOA7510,商购自Iwatsu ElectricCo.,Ltd.;测定探针:针脚型引线9771,商购自Hioki E.E.Corporation)在12点测定各实施例和比较例中获得的层积体中相对向的端子间的连接电阻,按照如下进行判定:当平均值小于30mΩ时,判定为“A”;当平均值为30mΩ以上时,判定为“B”。
[2]相对向端子间的导通路的形成性
对于各实施例和比较例所获得的积层体中相对向的10对端子,利用扫描电子显微镜(SEM)(JSM-7401F,商购自JEOL Ltd.)观察端子间的截面,并按照以下进行判定:当在全部10对端子中均由焊料形成圆柱状导通路时,判定为“A”;当在至少一对端子中没有形成导通路时,判定为“B”;当在相邻端子间出现短路时,判定为“C”。
[3]热循环试验后的连接电阻
利用四端子法(电阻计:数字式万用表VOA7510,商购自Iwatsu ElectricCo.,Ltd.;测定探针:针脚型引线9771,商购自Hioki E.E.Corporation)在12点测定各实施例和比较例中获得的层积体中相对向的端子间的连接电阻。接着使积层体接受1000个循环和1500个循环的热循环试验(一个循环是在-40℃进行10分钟和在85℃进行10分钟),并如上所述以相同的方式测定端子间的连接电阻。
按照如下判定:在所有点的连接电阻的初始值的变化均小于±5%且没有可视损坏时,判定为“A”;在连接电阻离初始值的变化为±5%以上且小于±10%并且没有可视损坏时,判定为“B”;并且在热循环试验后外观出现膨胀、剥落等,或连接电阻离初始值的变化为±10%以上时,判定为“C”。
[4]吸水率
以以下方式测定具有各实施例与比较例获得的导电连接材料的树脂层的吸水率WA[%]。首先,将具备所生产的导电连接材料的树脂层在依180℃和1小时的条件下进行硬化和干燥。然后,立即测定树脂层的重量W0[g]。接着,在将导电连接材料在温度85℃和湿度85%RH的条件下放置24小时后,测定树脂层的重量W1[g]。利用下式由所测得的W0[g]与W1[g]测定吸水率WA[%]。
WA[%]=(W1-W0)/W0×100
结果如表1所示。
表1
表1(继续)
使用以下产品用于表1中的树脂层成分和金属层。
环氧树脂:双酚A型环氧树脂,“EPICLON-840S”,商购自DICCorporation,环氧当量185g/eq
硬化剂:苯酚酚醛,“PR-53647”,商购自Sumitomo Bakelite Co.,Ltd.
薄膜形成性树脂:改性的双酚型苯氧树脂,“YX-6954”,商购自JapanEpoxy Resins Co.,重均分子量39,000
具助焊剂功能的化合物1:癸二酸,“癸二酸”,商购自Tokyo ChemicalIndustry Co.,Ltd.
具助焊剂功能的化合物2:酚酞啉,“酚酞啉”,商购自Tokyo ChemicalIndustry Co.,Ltd.
硅烷偶合剂:2-(3,4-环氧环己基)乙基三甲氧基硅烷,“KBM-303”,商购自Shin-Etsu Chemical Co.,Ltd.
咪唑:2-苯基-4-甲基咪唑,“CUREZOL 2P4MZ”,商购自ShikokuChemicals Corporation
填料1:二氧化硅,“SE2050”,商购自Admatechs Co.,Ltd.,平均粒径0.5μm,比重2.2
填料2:氧化铝,“AS-50”,商购自Showa Denko Kabushiki Kaisha,平均粒径9μm,比重3.8
金属层A:Sn/Pb=63/37(熔点:183℃),厚度10μm
金属层B:Sn/Ag/Cu=96.5/3.0/0.5(熔点:217℃),厚度10μm
由表1中的结果可知,通过将含有树脂成分和填料的树脂层用作导电连接材料的树脂层,可降低硬化后的树脂层的热膨胀系数,可减轻因部件安装或热循环试验时的加热而造成的热膨胀所导致的施加至连接部的应力,并可提高电子部件的可靠性。此外,通过将含有填料的树脂层用作导电连接材料的树脂层,可降低硬化后的树脂层的吸湿或吸水量,并可提高电子部件在吸湿下的耐热性。
本申请基于2009年12月24日所提交的日本专利申请号2009-292706,且将其内容通过引用并入本文。
产业上的可利用性
可在电连接电子部件中的电子构件或在基板上生产连接端子时,适当地使用本发明的导电连接材料。通过使用本发明的导电连接材料,可兼顾电子构件间的优异电连接和高绝缘可靠性。通过使用本发明的导电连接材料,也可在细微布线电路中连接端子。通过使用本发明的导电连接材料,还可满足电子装置的高机能化及小型化的要求。
Claims (21)
1.导电连接材料,其用于形成电子构件的多个端子上的导电部,其中所述电子构件具有基板和设置在所述基板上的多个端子,所述导电连接材料包括
金属层;和
具有树脂成分和填料的树脂层;
其中,通过使薄膜状的单一导电连接材料与所述设置在所述基板上的多个端子接触并加热所述导电连接材料,使所述金属层聚集于各端子上,从而在所述多个端子上形成所述导电部,且
其中,所述填料的粒径为10nm~50μm。
2.根据权利要求1所述的导电连接材料,其中,通过使所述导电连接材料与所述多个端子接触并加热所述导电连接材料,从而使所述金属层分离出而聚集于各端子上。
3.根据权利要求1所述的导电连接材料,其中,在所述金属层其上形成有树脂层的表面的对向表面上设置有其它树脂层。
4.根据权利要求1所述的导电连接材料,其中,所述金属层由焊锡或锡构成。
5.根据权利要求1所述的导电连接材料,其中,所述填料的含量相对于所述树脂层总重量为1~80重量%。
6.根据权利要求1所述的导电连接材料,其中,所述填料的体积为Fv,所述金属层的体积为Mv,Fv/Mv为0.01~10。
7.根据权利要求1所述的导电连接材料,其中,所述树脂层在室温至100℃的热膨胀系数为3~70ppm。
8.根据权利要求1所述的导电连接材料,其中,所述树脂层含有具助焊剂功能的化合物。
9.根据权利要求8所述的导电连接材料,其中,所述具助焊剂功能的化合物具有酚羟基和/或羧基。
10.根据权利要求8所述的导电连接材料,其中,所述具助焊剂功能的化合物含有以下通式(1)所示的化合物:
HOOC-(CH2)n–COOH (1)
其中,在上式中,n为1~20的整数。
11.根据权利要求8所述的导电连接材料,其中,所述具助焊剂功能的化合物含有以下通式(2)和/或(3)所示的化合物:
[化学式1]
其中,在上式中,R1~R5分别独立地为单价有机基团,R1~R5中至少之一为羟基;
[化学式2]
其中,在上式中,R6~R20分别独立为单价有机基团,且R6~R20中至少之一为羟基或羧基。
12.根据权利要求1所述的导电连接材料,其中,所述金属层的熔点为100℃~330℃。
13.根据权利要求1所述的导电连接材料,其中,所述端子为电极,所述导电部为连接端子。
14.电子部件的生产方法,所述方法包括以下步骤:
将权利要求1-12中任一项所述的导电连接材料置于两个彼此相对的且其各自的多个端子朝向内侧的电子构件之间,并使所述导电连接材料与所述两个电子构件各自的多个端子接触的步骤;
加热所述导电连接材料,使所述两个电子构件各自的多个端子通过在所述多个端子上形成的导电部相互连接的步骤;和
硬化或固化所述树脂层的步骤。
15.根据权利要求14所述的电子部件的生产方法,其中,所述树脂层具有热固性树脂;
使所述电子构件相互连接的步骤是通过在所述金属层的熔点以上且所述树脂层尚未完成硬化的温度下加热所述导电连接材料而进行的;和
硬化或固化所述树脂层的步骤是通过在所述树脂层完成硬化的温度下加热所述导电连接材料而进行的。
16.根据权利要求14所述的电子部件的生产方法,其中,所述树脂层具有热塑性树脂;
使所述电子构件相互连接的步骤是通过在所述金属层的熔点以上且所述树脂层被软化的温度下加热所述导电连接材料而进行的;和
硬化或固化所述树脂层的步骤是通过将所述导电连接材料冷却至所述树脂层固化的温度而进行的。
17.电子部件的生产方法,所述方法包括
使权利要求13所述的导电连接材料与所述多个端子接触的步骤;
加热所述导电连接材料从而在所述多个端子上形成所述导电部的步骤;和
硬化或固化所述树脂层的步骤。
18.根据权利要求17所述的电子部件的生产方法,其中,所述树脂层具有热固性树脂;
形成所述导电部的步骤是通过在所述金属层的熔点以上且所述树脂层尚未完成硬化的温度下加热所述导电连接材料而进行的;和
硬化或固化所述树脂层的步骤是通过在所述树脂层完成硬化的温度下加热所述导电连接材料而进行的。
19.根据权利要求17所述的电子部件的生产方法,其中,所述树脂层具有热塑性树脂;
形成所述导电部的步骤是通过在所述金属层的熔点以上且所述树脂层被软化的温度下加热所述导电连接材料而进行的;和
硬化或固化所述树脂层的步骤是通过将所述导电连接材料冷却至所述树脂层固化的温度而进行的。
20.具有导电连接材料的电子构件,其中使权利要求1-13中任一项所述的导电连接材料结合至所述电子构件的所述基板上,从而与所述多个端子相接触。
21.电子部件,其中两个彼此相对的且各自的多个端子朝向内侧的电子构件各自的所述多个端子通过使用权利要求1-13中任一项所述的导电连接材料所形成的所述导电部而相互连接。
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---|---|---|---|---|
CN102725912B (zh) * | 2010-01-29 | 2016-04-06 | 住友电木株式会社 | 导电连接片、端子间的连接方法、连接端子的形成方法、半导体装置和电子设备 |
JP5564964B2 (ja) * | 2010-01-29 | 2014-08-06 | 住友ベークライト株式会社 | 導電接続シート、端子間の接続方法、接続端子の形成方法、半導体装置および電子機器 |
JP2011176143A (ja) * | 2010-02-24 | 2011-09-08 | Sumitomo Bakelite Co Ltd | 導電接続シート、端子間の接続方法、接続端子の形成方法、半導体装置および電子機器 |
WO2011132647A1 (ja) * | 2010-04-19 | 2011-10-27 | 日東電工株式会社 | フリップチップ型半導体裏面用フィルム |
US12053934B2 (en) * | 2012-06-18 | 2024-08-06 | Ormet Circuits, Inc. | Conductive film adhesive |
JP2014075317A (ja) * | 2012-10-05 | 2014-04-24 | Sumitomo Bakelite Co Ltd | 導電接続シート、半導体装置および電子機器 |
TWI618728B (zh) * | 2013-08-07 | 2018-03-21 | 日立化成股份有限公司 | 環氧樹脂組成物及電子零件裝置 |
CN103607856A (zh) * | 2013-10-26 | 2014-02-26 | 溧阳市东大技术转移中心有限公司 | 一种复合挠性基板的制造方法 |
US10808123B2 (en) * | 2014-09-23 | 2020-10-20 | The Boeing Company | Nanoparticles for improving the dimensional stability of resins |
US9899330B2 (en) * | 2014-10-03 | 2018-02-20 | Mc10, Inc. | Flexible electronic circuits with embedded integrated circuit die |
JP6500565B2 (ja) * | 2015-04-01 | 2019-04-17 | 富士電機株式会社 | 半導体モジュール |
CN106132102B (zh) * | 2016-07-12 | 2018-09-07 | 北京梦之墨科技有限公司 | 液态金属双层电路制作方法及复合电路制作方法 |
GB201613051D0 (en) | 2016-07-28 | 2016-09-14 | Landa Labs (2012) Ltd | Applying an electrical conductor to a substrate |
JP7185252B2 (ja) | 2018-01-31 | 2022-12-07 | 三国電子有限会社 | 接続構造体の作製方法 |
JP7160302B2 (ja) * | 2018-01-31 | 2022-10-25 | 三国電子有限会社 | 接続構造体および接続構造体の作製方法 |
JP7046351B2 (ja) | 2018-01-31 | 2022-04-04 | 三国電子有限会社 | 接続構造体の作製方法 |
TWI730493B (zh) * | 2019-11-06 | 2021-06-11 | 台灣愛司帝科技股份有限公司 | 具有加熱功能的非導電薄膜以及電子裝置 |
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Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1242403A (zh) * | 1998-03-18 | 2000-01-26 | 住友电木株式会社 | 各向异性导电粘合剂、其制法和使用该粘合剂的电子装置 |
CN1498520A (zh) * | 2001-03-19 | 2004-05-19 | 住友电木株式会社 | 一种电子部件的生产方法及该方法生产的电子部件 |
CN102144432A (zh) * | 2008-09-05 | 2011-08-03 | 住友电木株式会社 | 导电连接材料、使用该导电连接材料的端子之间的连接方法以及连接端子的制造方法 |
Family Cites Families (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS61276873A (ja) | 1985-05-31 | 1986-12-06 | Sony Chem Kk | 導電異方性接着剤 |
US6034331A (en) * | 1996-07-23 | 2000-03-07 | Hitachi Chemical Company, Ltd. | Connection sheet and electrode connection structure for electrically interconnecting electrodes facing each other, and method using the connection sheet |
TW581800B (en) * | 1997-02-27 | 2004-04-01 | Seiko Epson Corp | Adhesive, liquid crystal device, process for manufacturing liquid crystal device, and electronic equipment |
JPH10270497A (ja) * | 1997-03-27 | 1998-10-09 | Sumitomo Bakelite Co Ltd | 半導体素子固定方法 |
JP3335896B2 (ja) * | 1997-12-26 | 2002-10-21 | 株式会社東芝 | ハンダ材及びハンダ材の製造方法 |
JP2000332393A (ja) * | 1999-05-21 | 2000-11-30 | Sumitomo Bakelite Co Ltd | 厚さ方向導電シート |
JP3769688B2 (ja) * | 2003-02-05 | 2006-04-26 | 独立行政法人科学技術振興機構 | 端子間の接続方法及び半導体装置の実装方法 |
KR100732017B1 (ko) * | 2003-06-25 | 2007-06-25 | 히다치 가세고교 가부시끼가이샤 | 회로접속재료, 이것을 이용한 필름상 회로접속재료,회로부재의 접속구조 및 그 제조방법 |
JP4282417B2 (ja) * | 2003-09-12 | 2009-06-24 | ソニーケミカル&インフォメーションデバイス株式会社 | 接続構造体 |
JP2005203693A (ja) * | 2004-01-19 | 2005-07-28 | Mitsubishi Electric Corp | 接続シートおよび実装部品の実装方法 |
WO2006103918A1 (ja) * | 2005-03-28 | 2006-10-05 | Matsushita Electric Industrial Co., Ltd. | フリップチップ実装体とフリップチップ実装方法及びフリップチップ実装装置 |
KR101063710B1 (ko) * | 2006-09-26 | 2011-09-07 | 히다치 가세고교 가부시끼가이샤 | 이방 도전성 접착제 조성물, 이방 도전성 필름, 회로 부재의 접속 구조, 및 피복 입자의 제조 방법 |
JP2008111990A (ja) * | 2006-10-30 | 2008-05-15 | Sumitomo Bakelite Co Ltd | 接着剤付き光回路基板、光素子実装用部品及び光素子実装部品 |
CN101669197B (zh) * | 2007-04-27 | 2012-07-18 | 住友电木株式会社 | 半导体晶片的接合方法和半导体装置的制造方法 |
US8157887B2 (en) * | 2010-08-06 | 2012-04-17 | Scott William Frame | Metal recovery system |
-
2010
- 2010-12-17 CN CN201080059170.7A patent/CN102687603B/zh not_active Expired - Fee Related
- 2010-12-17 WO PCT/JP2010/007323 patent/WO2011077679A1/ja active Application Filing
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- 2010-12-17 EP EP10838919A patent/EP2519088A1/en not_active Withdrawn
- 2010-12-24 TW TW099145746A patent/TWI540039B/zh not_active IP Right Cessation
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1242403A (zh) * | 1998-03-18 | 2000-01-26 | 住友电木株式会社 | 各向异性导电粘合剂、其制法和使用该粘合剂的电子装置 |
CN1498520A (zh) * | 2001-03-19 | 2004-05-19 | 住友电木株式会社 | 一种电子部件的生产方法及该方法生产的电子部件 |
CN102144432A (zh) * | 2008-09-05 | 2011-08-03 | 住友电木株式会社 | 导电连接材料、使用该导电连接材料的端子之间的连接方法以及连接端子的制造方法 |
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