TWI289328B - Nickel silicide with reduced interface roughness - Google Patents

Nickel silicide with reduced interface roughness Download PDF

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Publication number
TWI289328B
TWI289328B TW092113429A TW92113429A TWI289328B TW I289328 B TWI289328 B TW I289328B TW 092113429 A TW092113429 A TW 092113429A TW 92113429 A TW92113429 A TW 92113429A TW I289328 B TWI289328 B TW I289328B
Authority
TW
Taiwan
Prior art keywords
layer
gate electrode
nitrogen
nickel
semiconductor substrate
Prior art date
Application number
TW092113429A
Other languages
English (en)
Chinese (zh)
Other versions
TW200403731A (en
Inventor
Eric Paton
Paul Raymond Besser
Simon S Chan
Fred Hause
Original Assignee
Advanced Micro Devices Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Advanced Micro Devices Inc filed Critical Advanced Micro Devices Inc
Publication of TW200403731A publication Critical patent/TW200403731A/zh
Application granted granted Critical
Publication of TWI289328B publication Critical patent/TWI289328B/zh

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H10P95/50—Alloying conductive materials with semiconductor bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P30/00—Ion implantation into wafers, substrates or parts of devices
    • H10P30/20—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping
    • H10P30/202—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping characterised by the semiconductor materials
    • H10P30/204—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping characterised by the semiconductor materials into Group IV semiconductors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/01—Manufacture or treatment
    • H10D64/011—Manufacture or treatment of electrodes ohmically coupled to a semiconductor
    • H10D64/0111—Manufacture or treatment of electrodes ohmically coupled to a semiconductor to Group IV semiconductors
    • H10D64/0112—Manufacture or treatment of electrodes ohmically coupled to a semiconductor to Group IV semiconductors using conductive layers comprising silicides
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/01—Manufacture or treatment
    • H10D64/013—Manufacture or treatment of electrodes having a conductor capacitively coupled to a semiconductor by an insulator
    • H10D64/01302—Manufacture or treatment of electrodes having a conductor capacitively coupled to a semiconductor by an insulator the insulator being formed after the semiconductor body, the semiconductor being silicon
    • H10D64/01304—Manufacture or treatment of electrodes having a conductor capacitively coupled to a semiconductor by an insulator the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor
    • H10D64/01306—Manufacture or treatment of electrodes having a conductor capacitively coupled to a semiconductor by an insulator the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor the conductor comprising a layer of silicon contacting the insulator, e.g. polysilicon
    • H10D64/01308—Manufacture or treatment of electrodes having a conductor capacitively coupled to a semiconductor by an insulator the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor the conductor comprising a layer of silicon contacting the insulator, e.g. polysilicon the conductor further comprising a non-elemental silicon additional conductive layer, e.g. a metal silicide layer formed by the reaction of silicon with an implanted metal
    • H10D64/0131—Manufacture or treatment of electrodes having a conductor capacitively coupled to a semiconductor by an insulator the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor the conductor comprising a layer of silicon contacting the insulator, e.g. polysilicon the conductor further comprising a non-elemental silicon additional conductive layer, e.g. a metal silicide layer formed by the reaction of silicon with an implanted metal the additional conductive layer comprising a silicide layer formed by the silicidation reaction between the layer of silicon with a metal layer which is not formed by metal implantation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P30/00—Ion implantation into wafers, substrates or parts of devices
    • H10P30/20—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping
    • H10P30/208—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping of electrically inactive species
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/0212—Manufacture or treatment of FETs having insulated gates [IGFET] using self-aligned silicidation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/0223—Manufacture or treatment of FETs having insulated gates [IGFET] having source and drain regions or source and drain extensions self-aligned to sides of the gate
    • H10D30/0227—Manufacture or treatment of FETs having insulated gates [IGFET] having source and drain regions or source and drain extensions self-aligned to sides of the gate having both lightly-doped source and drain extensions and source and drain regions self-aligned to the sides of the gate, e.g. lightly-doped drain [LDD] MOSFET or double-diffused drain [DDD] MOSFET

Landscapes

  • Electrodes Of Semiconductors (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Thin Film Transistor (AREA)
TW092113429A 2002-05-31 2003-05-19 Nickel silicide with reduced interface roughness TWI289328B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US10/157,807 US6873051B1 (en) 2002-05-31 2002-05-31 Nickel silicide with reduced interface roughness

Publications (2)

Publication Number Publication Date
TW200403731A TW200403731A (en) 2004-03-01
TWI289328B true TWI289328B (en) 2007-11-01

Family

ID=32228405

Family Applications (1)

Application Number Title Priority Date Filing Date
TW092113429A TWI289328B (en) 2002-05-31 2003-05-19 Nickel silicide with reduced interface roughness

Country Status (9)

Country Link
US (2) US6873051B1 (https=)
EP (1) EP1509947B1 (https=)
JP (1) JP4866549B2 (https=)
KR (1) KR101117320B1 (https=)
CN (1) CN1333441C (https=)
AU (1) AU2003299495A1 (https=)
DE (1) DE60304225T2 (https=)
TW (1) TWI289328B (https=)
WO (1) WO2004040622A2 (https=)

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KR100870176B1 (ko) * 2003-06-27 2008-11-25 삼성전자주식회사 니켈 합금 샐리사이드 공정, 이를 사용하여 반도체소자를제조하는 방법, 그에 의해 형성된 니켈 합금 실리사이드막및 이를 사용하여 제조된 반도체소자
JP2005072264A (ja) * 2003-08-25 2005-03-17 Seiko Epson Corp トランジスタの製造方法、トランジスタ、回路基板、電気光学装置及び電子機器
US20050056881A1 (en) * 2003-09-15 2005-03-17 Yee-Chia Yeo Dummy pattern for silicide gate electrode
BE1015721A3 (nl) * 2003-10-17 2005-07-05 Imec Inter Uni Micro Electr Werkwijze voor het reduceren van de contactweerstand van de aansluitgebieden van een halfgeleiderinrichting.
JP3879003B2 (ja) * 2004-02-26 2007-02-07 国立大学法人名古屋大学 シリサイド膜の作製方法
US7253125B1 (en) 2004-04-16 2007-08-07 Novellus Systems, Inc. Method to improve mechanical strength of low-k dielectric film using modulated UV exposure
US7132352B1 (en) * 2004-08-06 2006-11-07 Advanced Micro Devices, Inc. Method of eliminating source/drain junction spiking, and device produced thereby
JP2006060045A (ja) * 2004-08-20 2006-03-02 Toshiba Corp 半導体装置
US9659769B1 (en) * 2004-10-22 2017-05-23 Novellus Systems, Inc. Tensile dielectric films using UV curing
JP2006261635A (ja) 2005-02-21 2006-09-28 Matsushita Electric Ind Co Ltd 半導体装置及びその製造方法
US8980769B1 (en) 2005-04-26 2015-03-17 Novellus Systems, Inc. Multi-station sequential curing of dielectric films
US8454750B1 (en) 2005-04-26 2013-06-04 Novellus Systems, Inc. Multi-station sequential curing of dielectric films
US8889233B1 (en) 2005-04-26 2014-11-18 Novellus Systems, Inc. Method for reducing stress in porous dielectric films
KR100679224B1 (ko) * 2005-11-04 2007-02-05 한국전자통신연구원 반도체 소자 및 그 제조방법
US7608515B2 (en) * 2006-02-14 2009-10-27 Taiwan Semiconductor Manufacturing Company, Ltd. Diffusion layer for stressed semiconductor devices
JP5042517B2 (ja) * 2006-04-10 2012-10-03 ルネサスエレクトロニクス株式会社 半導体装置の製造方法
JP4920310B2 (ja) * 2006-05-30 2012-04-18 株式会社東芝 半導体装置およびその製造方法
WO2008035490A1 (en) * 2006-09-20 2008-03-27 Nec Corporation Semiconductor device and method for manufacturing same
US10037905B2 (en) 2009-11-12 2018-07-31 Novellus Systems, Inc. UV and reducing treatment for K recovery and surface clean in semiconductor processing
US8465991B2 (en) * 2006-10-30 2013-06-18 Novellus Systems, Inc. Carbon containing low-k dielectric constant recovery using UV treatment
US20090004851A1 (en) * 2007-06-29 2009-01-01 Taiwan Semiconductor Manufacturing Co., Ltd. Salicidation process using electroless plating to deposit metal and introduce dopant impurities
US8211510B1 (en) 2007-08-31 2012-07-03 Novellus Systems, Inc. Cascaded cure approach to fabricate highly tensile silicon nitride films
DE102008035809B3 (de) * 2008-07-31 2010-03-25 Advanced Micro Devices, Inc., Sunnyvale Technik zum Verringern der Silizidungleichmäßigkeiten in Polysiliziumgateelektroden durch eine dazwischenliegende Diffusionsblockierschicht
US9050623B1 (en) 2008-09-12 2015-06-09 Novellus Systems, Inc. Progressive UV cure
US20110001169A1 (en) * 2009-07-01 2011-01-06 International Business Machines Corporation Forming uniform silicide on 3d structures
CN102593174B (zh) * 2011-01-18 2015-08-05 中国科学院微电子研究所 半导体器件及其制造方法
CN102593173B (zh) * 2011-01-18 2015-08-05 中国科学院微电子研究所 半导体器件及其制造方法
US9607842B1 (en) * 2015-10-02 2017-03-28 Asm Ip Holding B.V. Methods of forming metal silicides
US9847221B1 (en) 2016-09-29 2017-12-19 Lam Research Corporation Low temperature formation of high quality silicon oxide films in semiconductor device manufacturing
JP7583550B2 (ja) * 2020-08-13 2024-11-14 東京エレクトロン株式会社 半導体装置の電極部及びその製造方法
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Also Published As

Publication number Publication date
AU2003299495A1 (en) 2004-05-25
KR20050005524A (ko) 2005-01-13
EP1509947A2 (en) 2005-03-02
WO2004040622A2 (en) 2004-05-13
DE60304225T2 (de) 2006-12-14
US6967160B1 (en) 2005-11-22
EP1509947B1 (en) 2006-03-22
AU2003299495A8 (en) 2004-05-25
JP2005539402A (ja) 2005-12-22
US6873051B1 (en) 2005-03-29
DE60304225D1 (de) 2006-05-11
KR101117320B1 (ko) 2012-03-22
WO2004040622A3 (en) 2004-07-22
TW200403731A (en) 2004-03-01
JP4866549B2 (ja) 2012-02-01
CN1333441C (zh) 2007-08-22
CN1656605A (zh) 2005-08-17

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