TWI278133B - Surface modified organic thin film transistors and method of making the transistors - Google Patents

Surface modified organic thin film transistors and method of making the transistors Download PDF

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Publication number
TWI278133B
TWI278133B TW092103916A TW92103916A TWI278133B TW I278133 B TWI278133 B TW I278133B TW 092103916 A TW092103916 A TW 092103916A TW 92103916 A TW92103916 A TW 92103916A TW I278133 B TWI278133 B TW I278133B
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TW
Taiwan
Prior art keywords
group
fused
otft
pentacene
substituted
Prior art date
Application number
TW092103916A
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English (en)
Chinese (zh)
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TW200306027A (en
Inventor
Terrance Patrick Smith
Timothy Dehaven Dunbar
Mark James Pellerite
Tommie Wilson Kelley
Dawn Victoria Muyres
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3M Innovative Properties Co
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Publication of TW200306027A publication Critical patent/TW200306027A/zh
Application granted granted Critical
Publication of TWI278133B publication Critical patent/TWI278133B/zh

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462—Insulated gate field-effect transistors [IGFETs]
    • H10K10/468—Insulated gate field-effect transistors [IGFETs] characterised by the gate dielectrics
    • H10K10/474—Insulated gate field-effect transistors [IGFETs] characterised by the gate dielectrics the gate dielectric comprising a multilayered structure
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B3/00—Insulators or insulating bodies characterised by the insulating materials; Selection of materials for their insulating or dielectric properties
    • H01B3/18—Insulators or insulating bodies characterised by the insulating materials; Selection of materials for their insulating or dielectric properties mainly consisting of organic substances
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462—Insulated gate field-effect transistors [IGFETs]
    • H10K10/468—Insulated gate field-effect transistors [IGFETs] characterised by the gate dielectrics
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/60—Organic compounds having low molecular weight
    • H10K85/615—Polycyclic condensed aromatic hydrocarbons, e.g. anthracene
    • H10K85/623—Polycyclic condensed aromatic hydrocarbons, e.g. anthracene containing five rings, e.g. pentacene
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462—Insulated gate field-effect transistors [IGFETs]
    • H10K10/466—Lateral bottom-gate IGFETs comprising only a single gate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/10—Deposition of organic active material
    • H10K71/12—Deposition of organic active material using liquid deposition, e.g. spin coating
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S428/00—Stock material or miscellaneous articles
    • Y10S428/901—Printed circuit

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  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Materials Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Composite Materials (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Thin Film Transistor (AREA)
TW092103916A 2002-03-07 2003-02-25 Surface modified organic thin film transistors and method of making the transistors TWI278133B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US10/094,007 US6768132B2 (en) 2002-03-07 2002-03-07 Surface modified organic thin film transistors

Publications (2)

Publication Number Publication Date
TW200306027A TW200306027A (en) 2003-11-01
TWI278133B true TWI278133B (en) 2007-04-01

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
TW092103916A TWI278133B (en) 2002-03-07 2003-02-25 Surface modified organic thin film transistors and method of making the transistors

Country Status (8)

Country Link
US (1) US6768132B2 (enExample)
EP (1) EP1481428A1 (enExample)
JP (1) JP4589004B2 (enExample)
KR (1) KR20040094773A (enExample)
CN (1) CN100456518C (enExample)
AU (1) AU2003209087A1 (enExample)
TW (1) TWI278133B (enExample)
WO (1) WO2003077327A1 (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
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US8330146B2 (en) 2007-05-07 2012-12-11 Chunghwa Picture Tubes, Ltd. Organic photodetector

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Also Published As

Publication number Publication date
US20030175551A1 (en) 2003-09-18
CN100456518C (zh) 2009-01-28
AU2003209087A1 (en) 2003-09-22
JP2005519486A (ja) 2005-06-30
WO2003077327A1 (en) 2003-09-18
TW200306027A (en) 2003-11-01
CN1639884A (zh) 2005-07-13
EP1481428A1 (en) 2004-12-01
KR20040094773A (ko) 2004-11-10
US6768132B2 (en) 2004-07-27
JP4589004B2 (ja) 2010-12-01

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