JP4589004B2 - 有機薄膜トランジスタ及びその製造方法 - Google Patents

有機薄膜トランジスタ及びその製造方法 Download PDF

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Publication number
JP4589004B2
JP4589004B2 JP2003575431A JP2003575431A JP4589004B2 JP 4589004 B2 JP4589004 B2 JP 4589004B2 JP 2003575431 A JP2003575431 A JP 2003575431A JP 2003575431 A JP2003575431 A JP 2003575431A JP 4589004 B2 JP4589004 B2 JP 4589004B2
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substituted
otft
alkyl
group
pentacene
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JP2003575431A
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Japanese (ja)
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JP2005519486A (ja
JP2005519486A5 (enExample
Inventor
ピー． スミス，テランス
ディー． ボードマン，ラリー
ディー． ダンバー，ティモシー
ジェイ． ペラライト，マーク
ダブリュ． ケリー，トミー
ブイ． マイルズ，ダウン
イー． ボーゲル，デニス
エム． ボーゲル，キム
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3M Innovative Properties Co
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3M Innovative Properties Co
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Publication of JP2005519486A publication Critical patent/JP2005519486A/ja
Publication of JP2005519486A5 publication Critical patent/JP2005519486A5/ja
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462—Insulated gate field-effect transistors [IGFETs]
    • H10K10/468—Insulated gate field-effect transistors [IGFETs] characterised by the gate dielectrics
    • H10K10/474—Insulated gate field-effect transistors [IGFETs] characterised by the gate dielectrics the gate dielectric comprising a multilayered structure
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B3/00—Insulators or insulating bodies characterised by the insulating materials; Selection of materials for their insulating or dielectric properties
    • H01B3/18—Insulators or insulating bodies characterised by the insulating materials; Selection of materials for their insulating or dielectric properties mainly consisting of organic substances
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462—Insulated gate field-effect transistors [IGFETs]
    • H10K10/468—Insulated gate field-effect transistors [IGFETs] characterised by the gate dielectrics
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/60—Organic compounds having low molecular weight
    • H10K85/615—Polycyclic condensed aromatic hydrocarbons, e.g. anthracene
    • H10K85/623—Polycyclic condensed aromatic hydrocarbons, e.g. anthracene containing five rings, e.g. pentacene
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462—Insulated gate field-effect transistors [IGFETs]
    • H10K10/466—Lateral bottom-gate IGFETs comprising only a single gate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/10—Deposition of organic active material
    • H10K71/12—Deposition of organic active material using liquid deposition, e.g. spin coating
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S428/00—Stock material or miscellaneous articles
    • Y10S428/901—Printed circuit

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  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Materials Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Composite Materials (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Thin Film Transistor (AREA)
JP2003575431A 2002-03-07 2003-02-11 有機薄膜トランジスタ及びその製造方法 Expired - Fee Related JP4589004B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10/094,007 US6768132B2 (en) 2002-03-07 2002-03-07 Surface modified organic thin film transistors
PCT/US2003/003905 WO2003077327A1 (en) 2002-03-07 2003-02-11 Organic thin film transistors with modified surface of gate-dielectric

Publications (3)

Publication Number Publication Date
JP2005519486A JP2005519486A (ja) 2005-06-30
JP2005519486A5 JP2005519486A5 (enExample) 2006-03-30
JP4589004B2 true JP4589004B2 (ja) 2010-12-01

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JP2003575431A Expired - Fee Related JP4589004B2 (ja) 2002-03-07 2003-02-11 有機薄膜トランジスタ及びその製造方法

Country Status (8)

Country Link
US (1) US6768132B2 (enExample)
EP (1) EP1481428A1 (enExample)
JP (1) JP4589004B2 (enExample)
KR (1) KR20040094773A (enExample)
CN (1) CN100456518C (enExample)
AU (1) AU2003209087A1 (enExample)
TW (1) TWI278133B (enExample)
WO (1) WO2003077327A1 (enExample)

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Also Published As

Publication number Publication date
US20030175551A1 (en) 2003-09-18
WO2003077327A1 (en) 2003-09-18
TWI278133B (en) 2007-04-01
JP2005519486A (ja) 2005-06-30
TW200306027A (en) 2003-11-01
CN100456518C (zh) 2009-01-28
CN1639884A (zh) 2005-07-13
AU2003209087A1 (en) 2003-09-22
US6768132B2 (en) 2004-07-27
EP1481428A1 (en) 2004-12-01
KR20040094773A (ko) 2004-11-10

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