CN100456518C - 有机薄膜晶体管及其制备方法 - Google Patents

有机薄膜晶体管及其制备方法 Download PDF

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Publication number
CN100456518C
CN100456518C CNB038053217A CN03805321A CN100456518C CN 100456518 C CN100456518 C CN 100456518C CN B038053217 A CNB038053217 A CN B038053217A CN 03805321 A CN03805321 A CN 03805321A CN 100456518 C CN100456518 C CN 100456518C
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CN
China
Prior art keywords
thin film
film transistor
substituted
pentacene
groups
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Expired - Fee Related
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CNB038053217A
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English (en)
Chinese (zh)
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CN1639884A (zh
Inventor
特伦斯·P·史密斯
拉里·D·伯德曼
蒂莫西·D·邓巴
马克·J·佩勒瑞特
汤米·W·凯利
道恩·V·梅耶斯
丹尼斯·E·沃格尔
基姆·M·沃格尔
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3M Innovative Properties Co
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3M Innovative Properties Co
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Publication of CN1639884A publication Critical patent/CN1639884A/zh
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462—Insulated gate field-effect transistors [IGFETs]
    • H10K10/468—Insulated gate field-effect transistors [IGFETs] characterised by the gate dielectrics
    • H10K10/474—Insulated gate field-effect transistors [IGFETs] characterised by the gate dielectrics the gate dielectric comprising a multilayered structure
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B3/00—Insulators or insulating bodies characterised by the insulating materials; Selection of materials for their insulating or dielectric properties
    • H01B3/18—Insulators or insulating bodies characterised by the insulating materials; Selection of materials for their insulating or dielectric properties mainly consisting of organic substances
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462—Insulated gate field-effect transistors [IGFETs]
    • H10K10/468—Insulated gate field-effect transistors [IGFETs] characterised by the gate dielectrics
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/60—Organic compounds having low molecular weight
    • H10K85/615—Polycyclic condensed aromatic hydrocarbons, e.g. anthracene
    • H10K85/623—Polycyclic condensed aromatic hydrocarbons, e.g. anthracene containing five rings, e.g. pentacene
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462—Insulated gate field-effect transistors [IGFETs]
    • H10K10/466—Lateral bottom-gate IGFETs comprising only a single gate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/10—Deposition of organic active material
    • H10K71/12—Deposition of organic active material using liquid deposition, e.g. spin coating
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S428/00—Stock material or miscellaneous articles
    • Y10S428/901—Printed circuit

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  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Materials Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Composite Materials (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Thin Film Transistor (AREA)
CNB038053217A 2002-03-07 2003-02-11 有机薄膜晶体管及其制备方法 Expired - Fee Related CN100456518C (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10/094,007 2002-03-07
US10/094,007 US6768132B2 (en) 2002-03-07 2002-03-07 Surface modified organic thin film transistors

Publications (2)

Publication Number Publication Date
CN1639884A CN1639884A (zh) 2005-07-13
CN100456518C true CN100456518C (zh) 2009-01-28

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Family Applications (1)

Application Number Title Priority Date Filing Date
CNB038053217A Expired - Fee Related CN100456518C (zh) 2002-03-07 2003-02-11 有机薄膜晶体管及其制备方法

Country Status (8)

Country Link
US (1) US6768132B2 (enExample)
EP (1) EP1481428A1 (enExample)
JP (1) JP4589004B2 (enExample)
KR (1) KR20040094773A (enExample)
CN (1) CN100456518C (enExample)
AU (1) AU2003209087A1 (enExample)
TW (1) TWI278133B (enExample)
WO (1) WO2003077327A1 (enExample)

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KR100995451B1 (ko) * 2003-07-03 2010-11-18 삼성전자주식회사 다층 구조의 게이트 절연막을 포함하는 유기 박막 트랜지스터
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US20070145359A1 (en) * 2005-12-07 2007-06-28 Chi Ming Che Materials for organic thin film transistors
JP2007266355A (ja) * 2006-03-29 2007-10-11 Brother Ind Ltd 有機トランジスタ及び有機トランジスタの製造方法
CN100590904C (zh) * 2006-06-06 2010-02-17 中华映管股份有限公司 图案化制程及应用此制程的有机薄膜晶体管的制作方法
KR101151159B1 (ko) 2006-09-19 2012-06-01 삼성전자주식회사 포스페이트계 자기조립단분자막을 포함하는 유기 박막트랜지스터 및 그 제조방법
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JP5209996B2 (ja) 2007-03-23 2013-06-12 山本化成株式会社 有機トランジスタ
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JP5153227B2 (ja) * 2007-06-26 2013-02-27 キヤノン株式会社 有機発光素子
US7891636B2 (en) * 2007-08-27 2011-02-22 3M Innovative Properties Company Silicone mold and use thereof
JP5291321B2 (ja) * 2007-10-24 2013-09-18 旭化成株式会社 有機半導体薄膜及び有機半導体素子
JP5396709B2 (ja) * 2007-12-11 2014-01-22 セイコーエプソン株式会社 薄膜トランジスタ、電気光学装置および電子機器
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US4539061A (en) * 1983-09-07 1985-09-03 Yeda Research And Development Co., Ltd. Process for the production of built-up films by the stepwise adsorption of individual monolayers
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Also Published As

Publication number Publication date
EP1481428A1 (en) 2004-12-01
US6768132B2 (en) 2004-07-27
KR20040094773A (ko) 2004-11-10
JP2005519486A (ja) 2005-06-30
TW200306027A (en) 2003-11-01
TWI278133B (en) 2007-04-01
WO2003077327A1 (en) 2003-09-18
AU2003209087A1 (en) 2003-09-22
CN1639884A (zh) 2005-07-13
JP4589004B2 (ja) 2010-12-01
US20030175551A1 (en) 2003-09-18

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Termination date: 20120211