JP2005519486A5 - - Google Patents

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Publication number
JP2005519486A5
JP2005519486A5 JP2003575431A JP2003575431A JP2005519486A5 JP 2005519486 A5 JP2005519486 A5 JP 2005519486A5 JP 2003575431 A JP2003575431 A JP 2003575431A JP 2003575431 A JP2003575431 A JP 2003575431A JP 2005519486 A5 JP2005519486 A5 JP 2005519486A5
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JP
Japan
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group
otft
alkyl
substituted
pentacene
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JP2003575431A
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English (en)
Japanese (ja)
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JP4589004B2 (ja
JP2005519486A (ja
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Priority claimed from US10/094,007 external-priority patent/US6768132B2/en
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Publication of JP2005519486A publication Critical patent/JP2005519486A/ja
Publication of JP2005519486A5 publication Critical patent/JP2005519486A5/ja
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Publication of JP4589004B2 publication Critical patent/JP4589004B2/ja
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Expired - Fee Related legal-status Critical Current

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JP2003575431A 2002-03-07 2003-02-11 有機薄膜トランジスタ及びその製造方法 Expired - Fee Related JP4589004B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10/094,007 US6768132B2 (en) 2002-03-07 2002-03-07 Surface modified organic thin film transistors
PCT/US2003/003905 WO2003077327A1 (en) 2002-03-07 2003-02-11 Organic thin film transistors with modified surface of gate-dielectric

Publications (3)

Publication Number Publication Date
JP2005519486A JP2005519486A (ja) 2005-06-30
JP2005519486A5 true JP2005519486A5 (enExample) 2006-03-30
JP4589004B2 JP4589004B2 (ja) 2010-12-01

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Family Applications (1)

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JP2003575431A Expired - Fee Related JP4589004B2 (ja) 2002-03-07 2003-02-11 有機薄膜トランジスタ及びその製造方法

Country Status (8)

Country Link
US (1) US6768132B2 (enExample)
EP (1) EP1481428A1 (enExample)
JP (1) JP4589004B2 (enExample)
KR (1) KR20040094773A (enExample)
CN (1) CN100456518C (enExample)
AU (1) AU2003209087A1 (enExample)
TW (1) TWI278133B (enExample)
WO (1) WO2003077327A1 (enExample)

Families Citing this family (50)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6946676B2 (en) * 2001-11-05 2005-09-20 3M Innovative Properties Company Organic thin film transistor with polymeric interface
US7285440B2 (en) * 2002-11-25 2007-10-23 International Business Machines Corporation Organic underlayers that improve the performance of organic semiconductors
US7088145B2 (en) * 2002-12-23 2006-08-08 3M Innovative Properties Company AC powered logic circuitry
WO2004088765A1 (en) * 2003-03-31 2004-10-14 Canon Kabushiki Kaisha Organic thin film transistor and manufacturing method thereof
US6858527B2 (en) * 2003-04-14 2005-02-22 Intel Corporation Method to increase electromigration resistance of copper using self-assembled organic thiolate monolayers
DE10328811B4 (de) * 2003-06-20 2005-12-29 Infineon Technologies Ag Verbindung zur Bildung einer selbstorganisierenden Monolage, Schichtstruktur, Halbleiterbauelement mit einer Schichtstruktur und Verfahren zur Herstellung einer Schichtstruktur
KR100995451B1 (ko) * 2003-07-03 2010-11-18 삼성전자주식회사 다층 구조의 게이트 절연막을 포함하는 유기 박막 트랜지스터
US7122828B2 (en) * 2003-09-24 2006-10-17 Lucent Technologies, Inc. Semiconductor devices having regions of induced high and low conductivity, and methods of making the same
US6969634B2 (en) * 2003-09-24 2005-11-29 Lucent Technologies Inc. Semiconductor layers with roughness patterning
US8450723B2 (en) 2003-11-04 2013-05-28 Alcatel Lucent Apparatus having an aromatic dielectric and an aromatic organic semiconductor including an alkyl chain
US7115900B2 (en) * 2003-11-26 2006-10-03 Lucent Technologies Inc. Devices having patterned regions of polycrystalline organic semiconductors, and methods of making the same
US7078937B2 (en) * 2003-12-17 2006-07-18 3M Innovative Properties Company Logic circuitry powered by partially rectified ac waveform
JP4661065B2 (ja) * 2004-03-22 2011-03-30 セイコーエプソン株式会社 相補型有機半導体装置
DE102004025423B4 (de) * 2004-05-24 2008-03-06 Qimonda Ag Dünnfilm-Feldeffekt-Transistor mit Gate-Dielektrikum aus organischem Material und Verfahren zu dessen Herstellung
WO2005122293A2 (en) * 2004-06-08 2005-12-22 Princeton University Formation of ordered thin films of organics on metal oxide surfaces
US7374984B2 (en) * 2004-10-29 2008-05-20 Randy Hoffman Method of forming a thin film component
US7315042B2 (en) * 2004-11-18 2008-01-01 3M Innovative Properties Company Semiconductors containing trans-1,2-bis(acenyl)ethylene compounds
US20060105199A1 (en) * 2004-11-18 2006-05-18 3M Innovative Properties Company Electroluminescent devices containing trans-1,2-bis(acenyl)ethylene compounds
US20060142520A1 (en) * 2004-12-27 2006-06-29 3M Innovative Properties Company Hole transport layers for organic electroluminescent devices
KR100637210B1 (ko) * 2005-01-28 2006-10-23 삼성에스디아이 주식회사 박막 트랜지스터, 이의 제조 방법 및 이를 구비한 평판표시 장치
US7619242B2 (en) * 2005-02-25 2009-11-17 Xerox Corporation Celluloses and devices thereof
JP2008544936A (ja) * 2005-05-12 2008-12-11 ジョージア テック リサーチ コーポレイション コーティングされた金属酸化物ナノ粒子およびその製造方法
KR100708720B1 (ko) * 2005-10-19 2007-04-17 삼성에스디아이 주식회사 유기 박막 트랜지스터, 이의 제조 방법 및 이를 구비한평판 표시 장치
US8414962B2 (en) 2005-10-28 2013-04-09 The Penn State Research Foundation Microcontact printed thin film capacitors
KR20070053060A (ko) 2005-11-19 2007-05-23 삼성전자주식회사 표시장치와 이의 제조방법
KR100661695B1 (ko) 2005-11-22 2006-12-26 삼성코닝 주식회사 자기조립단분자막을 이용한 반도체 박막 및 그 제조방법
US20070145359A1 (en) * 2005-12-07 2007-06-28 Chi Ming Che Materials for organic thin film transistors
JP2007266355A (ja) * 2006-03-29 2007-10-11 Brother Ind Ltd 有機トランジスタ及び有機トランジスタの製造方法
CN100590904C (zh) * 2006-06-06 2010-02-17 中华映管股份有限公司 图案化制程及应用此制程的有机薄膜晶体管的制作方法
KR101151159B1 (ko) 2006-09-19 2012-06-01 삼성전자주식회사 포스페이트계 자기조립단분자막을 포함하는 유기 박막트랜지스터 및 그 제조방법
US8405069B2 (en) * 2006-11-10 2013-03-26 Georgia Tech Research Corporation Printable thin-film transistors with high dielectric constant gate insulators and methods for producing same
US7892454B2 (en) * 2006-11-17 2011-02-22 Polyera Corporation Acene-based organic semiconductor materials and methods of preparing and using the same
JP5209996B2 (ja) 2007-03-23 2013-06-12 山本化成株式会社 有機トランジスタ
TWI355106B (en) 2007-05-07 2011-12-21 Chunghwa Picture Tubes Ltd Organic photodetector and fabricating method of or
JP5153227B2 (ja) * 2007-06-26 2013-02-27 キヤノン株式会社 有機発光素子
US7891636B2 (en) * 2007-08-27 2011-02-22 3M Innovative Properties Company Silicone mold and use thereof
JP5291321B2 (ja) * 2007-10-24 2013-09-18 旭化成株式会社 有機半導体薄膜及び有機半導体素子
JP5396709B2 (ja) * 2007-12-11 2014-01-22 セイコーエプソン株式会社 薄膜トランジスタ、電気光学装置および電子機器
JP5329816B2 (ja) * 2008-01-25 2013-10-30 旭化成株式会社 有機半導体層を有する新規光電界効果トランジスタ
EP2259355B1 (en) 2008-03-10 2013-02-20 Yamamoto Chemicals, Inc. Organic transistor
US8119445B2 (en) * 2008-05-27 2012-02-21 The Board Of Trustees Of The Leland Stanford Junior University Organic semiconductors and growth approaches therefor
JP5334465B2 (ja) * 2008-06-17 2013-11-06 山本化成株式会社 有機トランジスタ
JP5666474B2 (ja) * 2009-12-14 2015-02-12 出光興産株式会社 多環縮環化合物、及び、それを用いた有機薄膜トランジスタ
JP2012067051A (ja) * 2010-09-27 2012-04-05 Idemitsu Kosan Co Ltd 有機薄膜トランジスタ用化合物及びそれを用いた有機薄膜トランジスタ
EP2500009A1 (en) 2011-03-17 2012-09-19 3M Innovative Properties Company Dental ceramic article, process of production and use thereof
WO2013069366A1 (ja) * 2011-11-10 2013-05-16 富士電機株式会社 有機薄膜トランジスタ及びその製造方法
CN102507659B (zh) * 2011-11-28 2013-11-13 电子科技大学 基于有机薄膜晶体管的甲醛气体传感器及其制备方法
JP5921359B2 (ja) * 2012-06-22 2016-05-24 公立大学法人兵庫県立大学 テトラベンゾテトラセン誘導体、その合成方法およびその用途
CN103045232B (zh) * 2012-10-18 2014-07-23 吉林奥来德光电材料股份有限公司 二氢并五苯烯烃类有机发光材料及其制备方法和应用
KR102038124B1 (ko) * 2016-06-27 2019-10-29 숭실대학교산학협력단 유기 반도체 소자의 제조 방법

Family Cites Families (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB680343A (en) 1949-07-25 1952-10-01 C D Patents Ltd Improvements in or relating to the manufacture of synthetic resins from aromatic substituted olefinic hydrocarbons
JPS6058467B2 (ja) 1977-10-22 1985-12-20 株式会社リコー 電子写真用感光体
US4539061A (en) 1983-09-07 1985-09-03 Yeda Research And Development Co., Ltd. Process for the production of built-up films by the stepwise adsorption of individual monolayers
US5079179A (en) 1987-10-09 1992-01-07 Hughes Aircraft Company Process of making GaAs electrical circuit devices with Langmuir-Blodgett insulator layer
EP0344111A3 (de) 1988-05-27 1990-04-04 Ciba-Geigy Ag Substituierte Tetrathio- und Tetraselenotetracene
FR2664430B1 (fr) 1990-07-04 1992-09-18 Centre Nat Rech Scient Transistor a effet de champ en couche mince de structure mis, dont l'isolant et le semiconducteur sont realises en materiaux organiques.
US5625199A (en) 1996-01-16 1997-04-29 Lucent Technologies Inc. Article comprising complementary circuit with inorganic n-channel and organic p-channel thin film transistors
US6326640B1 (en) 1996-01-29 2001-12-04 Motorola, Inc. Organic thin film transistor with enhanced carrier mobility
US5965679A (en) 1996-09-10 1999-10-12 The Dow Chemical Company Polyphenylene oligomers and polymers
DE19815220C2 (de) 1998-03-27 2003-12-18 Univ Dresden Tech Verfahren zur haftfesten und dichten chemischen oder galvanischen Metallisierung von Substraten sowie Haftvermittler zur Durchführung des Verfahrens
JP3102414B2 (ja) 1998-06-08 2000-10-23 日本電気株式会社 有機エレクトロルミネッセンス素子
EP1093663A2 (en) 1998-06-19 2001-04-25 Thin Film Electronics ASA Integrated inorganic/organic complementary thin-film transistor circuit
US6215130B1 (en) 1998-08-20 2001-04-10 Lucent Technologies Inc. Thin film transistors
US6252245B1 (en) 1999-03-29 2001-06-26 Howard Edan Katz Device comprising n-channel semiconductor material
US6265243B1 (en) 1999-03-29 2001-07-24 Lucent Technologies Inc. Process for fabricating organic circuits
NO312867B1 (no) 1999-06-30 2002-07-08 Penn State Res Found Anordning til elektrisk kontaktering eller isolering av organiske eller uorganiske halvledere, samt fremgangsmåte til densfremstilling
JP2001244467A (ja) * 2000-02-28 2001-09-07 Hitachi Ltd コプラナー型半導体装置とそれを用いた表示装置および製法
CA2401487C (en) * 2000-02-29 2011-06-21 Japan Science And Technology Corporation Polyacene derivatives and process of producing thereof
US6433359B1 (en) * 2001-09-06 2002-08-13 3M Innovative Properties Company Surface modifying layers for organic thin film transistors
US20030097010A1 (en) * 2001-09-27 2003-05-22 Vogel Dennis E. Process for preparing pentacene derivatives

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