JP2009514223A5 - - Google Patents
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- Publication number
- JP2009514223A5 JP2009514223A5 JP2008537779A JP2008537779A JP2009514223A5 JP 2009514223 A5 JP2009514223 A5 JP 2009514223A5 JP 2008537779 A JP2008537779 A JP 2008537779A JP 2008537779 A JP2008537779 A JP 2008537779A JP 2009514223 A5 JP2009514223 A5 JP 2009514223A5
- Authority
- JP
- Japan
- Prior art keywords
- thin film
- semiconductor material
- electron
- organic
- organic semiconductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 claims 10
- 229910052757 nitrogen Inorganic materials 0.000 claims 8
- 239000000463 material Substances 0.000 claims 6
- 125000001424 substituent group Chemical group 0.000 claims 6
- 239000010409 thin film Substances 0.000 claims 6
- 125000003118 aryl group Chemical group 0.000 claims 4
- 125000002837 carbocyclic group Chemical group 0.000 claims 4
- 125000001997 phenyl group Chemical group [H]C1=C([H])C([H])=C(*)C([H])=C1[H] 0.000 claims 3
- -1 1,4,5,8-naphthalene tetracarboxylic acid diimide compound Chemical class 0.000 claims 2
- 239000010408 film Substances 0.000 claims 2
- 125000000962 organic group Chemical group 0.000 claims 2
- GSOFREOFMHUMMZ-UHFFFAOYSA-N 3,4-dicarbamoylnaphthalene-1,2-dicarboxylic acid Chemical class C1=CC=CC2=C(C(O)=N)C(C(=N)O)=C(C(O)=O)C(C(O)=O)=C21 GSOFREOFMHUMMZ-UHFFFAOYSA-N 0.000 claims 1
- 230000002411 adverse Effects 0.000 claims 1
- 238000000151 deposition Methods 0.000 claims 1
- 229910000071 diazene Inorganic materials 0.000 claims 1
- 230000005669 field effect Effects 0.000 claims 1
- 238000004519 manufacturing process Methods 0.000 claims 1
- MZYHMUONCNKCHE-UHFFFAOYSA-N naphthalene-1,2,3,4-tetracarboxylic acid Chemical class C1=CC=CC2=C(C(O)=O)C(C(=O)O)=C(C(O)=O)C(C(O)=O)=C21 MZYHMUONCNKCHE-UHFFFAOYSA-N 0.000 claims 1
- 238000006467 substitution reaction Methods 0.000 claims 1
- 239000000758 substrate Substances 0.000 claims 1
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US11/263,111 US7629605B2 (en) | 2005-10-31 | 2005-10-31 | N-type semiconductor materials for thin film transistors |
| PCT/US2006/040750 WO2007053303A2 (en) | 2005-10-31 | 2006-10-16 | N-type semiconductor materials for thin film transistors |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2009514223A JP2009514223A (ja) | 2009-04-02 |
| JP2009514223A5 true JP2009514223A5 (enExample) | 2010-12-16 |
Family
ID=37882142
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2008537779A Pending JP2009514223A (ja) | 2005-10-31 | 2006-10-16 | 薄膜トランジスタのためのｎ型半導体材料 |
Country Status (6)
| Country | Link |
|---|---|
| US (2) | US7629605B2 (enExample) |
| EP (1) | EP1943691A2 (enExample) |
| JP (1) | JP2009514223A (enExample) |
| KR (1) | KR20080063803A (enExample) |
| TW (1) | TW200729571A (enExample) |
| WO (1) | WO2007053303A2 (enExample) |
Families Citing this family (21)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR101148868B1 (ko) * | 2004-01-26 | 2012-05-29 | 노오쓰웨스턴 유니버시티 | 페릴렌 ｎ-형 반도체 및 관련된 소자 |
| US7629605B2 (en) * | 2005-10-31 | 2009-12-08 | Eastman Kodak Company | N-type semiconductor materials for thin film transistors |
| US7422777B2 (en) * | 2005-11-22 | 2008-09-09 | Eastman Kodak Company | N,N′-dicycloalkyl-substituted naphthalene-based tetracarboxylic diimide compounds as n-type semiconductor materials for thin film transistors |
| US7569693B2 (en) * | 2006-06-12 | 2009-08-04 | Northwestern University | Naphthalene-based semiconductor materials and methods of preparing and use thereof |
| EP2089398A2 (en) * | 2006-10-25 | 2009-08-19 | Polyera Corporation | Organic semiconductor materials and methods of preparing and use thereof |
| EP2086974B1 (en) | 2006-11-17 | 2013-07-24 | Polyera Corporation | Diimide-based semiconductor materials and methods of preparing and using the same |
| EP2104676A2 (en) * | 2007-01-08 | 2009-09-30 | Polyera Corporation | Methods for preparing arene-bis(dicarboximide)-based semiconducting materials and related intermediates for preparing same |
| WO2008091670A2 (en) * | 2007-01-24 | 2008-07-31 | Polyera Corporation | Organic semiconductor materials and precursors thereof |
| US8963126B2 (en) * | 2008-01-07 | 2015-02-24 | The Johns Hopkins University | Low-voltage, N-channel transistors including a hybrid semiconductor-dielectric material |
| US7649199B2 (en) * | 2008-04-11 | 2010-01-19 | Eastman Kodak Company | N-type semiconductor materials in thin film transistors and electronic devices |
| US20110079773A1 (en) * | 2009-08-21 | 2011-04-07 | Wasielewski Michael R | Selectively Functionalized Rylene Imides and Diimides |
| US8314265B2 (en) | 2010-04-30 | 2012-11-20 | Eastman Kodak Company | Aromatic amic acids or amic esters and compositions |
| US8411489B2 (en) | 2010-04-30 | 2013-04-02 | Eastman Kodak Company | Semiconducting devices and methods of preparing |
| US20110269966A1 (en) * | 2010-04-30 | 2011-11-03 | Deepak Shukla | Semiconducting articles |
| US8530270B2 (en) | 2010-04-30 | 2013-09-10 | Eastman Kodak Company | Methods of preparing semiconductive compositions and devices |
| US8404892B2 (en) | 2010-05-27 | 2013-03-26 | Eastman Kodak Company | Aromatic amic acid salts and compositions |
| US8692238B2 (en) | 2012-04-25 | 2014-04-08 | Eastman Kodak Company | Semiconductor devices and methods of preparation |
| US8779415B2 (en) | 2012-11-08 | 2014-07-15 | Eastman Kodak Company | Devices containing organic polymeric multi-metallic composites |
| KR101490104B1 (ko) * | 2013-06-12 | 2015-03-25 | 경상대학교산학협력단 | 나프탈렌 다이이미드 유도체 화합물 및 제조방법과 이를 포함하는 유기전자소자 |
| WO2015191293A1 (en) | 2014-06-11 | 2015-12-17 | Eastman Kodak Company | Devices having dielectric layers with thiosulfate-containing polymers |
| KR102330698B1 (ko) * | 2015-09-04 | 2021-11-23 | 삼성전자주식회사 | 유기 광전 소자 및 이미지 센서 |
Family Cites Families (17)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE2951349A1 (de) | 1979-12-20 | 1981-07-02 | Bayer Ag, 5090 Leverkusen | Naphthalintetracarbonsaeurediimide als elektrische halbleiter und photoleiter |
| US4442193A (en) * | 1983-02-22 | 1984-04-10 | Eastman Kodak Company | Photoconductive compositions and elements containing naphthalene bis-dicarboximide compounds |
| US4468444A (en) | 1983-04-21 | 1984-08-28 | Eastman Kodak Company | Pyrylium-sensitized leuco base photoconductive compositions and elements containing naphthalene bis-dicarboximide compounds |
| DE59608872D1 (de) * | 1995-10-12 | 2002-04-18 | Ciba Sc Holding Ag | Naphthalinlactamimid-Fluoreszenzfarbstoffe |
| JP3373783B2 (ja) | 1998-05-29 | 2003-02-04 | 京セラミタ株式会社 | ナフタレンテトラカルボン酸ジイミド誘導体及び電子写真用感光体 |
| JP3559173B2 (ja) * | 1998-07-01 | 2004-08-25 | 京セラミタ株式会社 | 負帯電単層型電子写真感光体 |
| JP2000113504A (ja) * | 1998-10-05 | 2000-04-21 | Mitsui Chemicals Inc | 光記録媒体 |
| US6387727B1 (en) | 1999-03-29 | 2002-05-14 | Agere Systems Guardian Corp. | Device comprising n-channel semiconductor material |
| DE20021356U1 (de) | 2000-12-18 | 2001-02-22 | Basf Ag, 67063 Ludwigshafen | Polyvinylchlorid mit kernhydrierten Phthalat-Weichmachern |
| EP1237017A1 (en) | 2001-02-20 | 2002-09-04 | Fuji Photo Film Co., Ltd. | Polarizing plate protection film |
| US6844033B2 (en) | 2001-03-01 | 2005-01-18 | Konica Corporation | Cellulose ester film, its manufacturing method, polarizing plate, and liquid crystal display |
| JP4792677B2 (ja) | 2001-04-25 | 2011-10-12 | コニカミノルタホールディングス株式会社 | セルロースエステルフィルム |
| WO2003062314A1 (en) | 2002-01-16 | 2003-07-31 | Eastman Chemical Company | Novel carbohydrate esters and polyol esters as plasticizers for polymers, compositions and articles including such plasticizers and methods of using the same |
| EP1434282A3 (en) | 2002-12-26 | 2007-06-27 | Konica Minolta Holdings, Inc. | Protective layer for an organic thin-film transistor |
| WO2005066718A1 (ja) | 2003-12-26 | 2005-07-21 | Canon Kabushiki Kaisha | 電子写真感光体、プロセスカートリッジおよび電子写真装置 |
| KR101148868B1 (ko) | 2004-01-26 | 2012-05-29 | 노오쓰웨스턴 유니버시티 | 페릴렌 ｎ-형 반도체 및 관련된 소자 |
| US7629605B2 (en) * | 2005-10-31 | 2009-12-08 | Eastman Kodak Company | N-type semiconductor materials for thin film transistors |
-
2005
- 2005-10-31 US US11/263,111 patent/US7629605B2/en not_active Expired - Fee Related
-
2006
- 2006-10-16 KR KR1020087010409A patent/KR20080063803A/ko not_active Ceased
- 2006-10-16 JP JP2008537779A patent/JP2009514223A/ja active Pending
- 2006-10-16 WO PCT/US2006/040750 patent/WO2007053303A2/en not_active Ceased
- 2006-10-16 EP EP06817131A patent/EP1943691A2/en not_active Withdrawn
- 2006-10-30 TW TW095139948A patent/TW200729571A/zh unknown
-
2009
- 2009-08-21 US US12/545,337 patent/US7807994B2/en not_active Expired - Fee Related
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