JP2010534403A5 - - Google Patents

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Publication number
JP2010534403A5
JP2010534403A5 JP2010514797A JP2010514797A JP2010534403A5 JP 2010534403 A5 JP2010534403 A5 JP 2010534403A5 JP 2010514797 A JP2010514797 A JP 2010514797A JP 2010514797 A JP2010514797 A JP 2010514797A JP 2010534403 A5 JP2010534403 A5 JP 2010534403A5
Authority
JP
Japan
Prior art keywords
heterocycloalkyl
substituted
ring system
thin film
independently
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
JP2010514797A
Other languages
English (en)
Japanese (ja)
Other versions
JP2010534403A (ja
Filing date
Publication date
Priority claimed from US11/771,196 external-priority patent/US7858970B2/en
Application filed filed Critical
Publication of JP2010534403A publication Critical patent/JP2010534403A/ja
Publication of JP2010534403A5 publication Critical patent/JP2010534403A5/ja
Ceased legal-status Critical Current

Links

JP2010514797A 2007-06-29 2008-06-25 薄膜トランジスタのためのテトラカルボン酸ジイミド半導体 Ceased JP2010534403A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US11/771,196 US7858970B2 (en) 2007-06-29 2007-06-29 Heterocycloalkyl-substituted naphthalene-based tetracarboxylic diimide compounds as N-type semiconductor materials for thin film transistors
PCT/US2008/007913 WO2009005669A2 (en) 2007-06-29 2008-06-25 Tetracarboxylic diimide semiconductor for thin film transistors

Publications (2)

Publication Number Publication Date
JP2010534403A JP2010534403A (ja) 2010-11-04
JP2010534403A5 true JP2010534403A5 (enExample) 2011-08-04

Family

ID=40159276

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2010514797A Ceased JP2010534403A (ja) 2007-06-29 2008-06-25 薄膜トランジスタのためのテトラカルボン酸ジイミド半導体

Country Status (6)

Country Link
US (1) US7858970B2 (enExample)
EP (1) EP2162932A2 (enExample)
JP (1) JP2010534403A (enExample)
CN (1) CN101849300B (enExample)
TW (1) TW200908408A (enExample)
WO (1) WO2009005669A2 (enExample)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5155616B2 (ja) * 2007-07-25 2013-03-06 沖プリンテッドサーキット株式会社 Rfidタグ、rfidシステムおよびrfidタグの製造方法
US8692238B2 (en) 2012-04-25 2014-04-08 Eastman Kodak Company Semiconductor devices and methods of preparation
US8779415B2 (en) 2012-11-08 2014-07-15 Eastman Kodak Company Devices containing organic polymeric multi-metallic composites
US9541829B2 (en) 2013-07-24 2017-01-10 Orthogonal, Inc. Cross-linkable fluorinated photopolymer
KR20160118340A (ko) 2014-02-07 2016-10-11 올싸거널 인코포레이티드 교차-결합 가능한 플루오르화된 포토폴리머
EP3155623B1 (en) 2014-06-11 2019-05-08 Eastman Kodak Company Devices having dielectric layers with thiosulfate-containing polymers
CN104976947A (zh) * 2015-07-20 2015-10-14 天津大学 一种柔性薄膜场效应晶体管曲率测量传感器
EP3383876B1 (en) * 2015-12-02 2025-04-23 University of Utah Research Foundation Chemical self-doping of one-dimensional organic nanomaterials for high conductivity application in chemiresistive sensing gas or vapor

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2951349A1 (de) 1979-12-20 1981-07-02 Bayer Ag, 5090 Leverkusen Naphthalintetracarbonsaeurediimide als elektrische halbleiter und photoleiter
US6387727B1 (en) * 1999-03-29 2002-05-14 Agere Systems Guardian Corp. Device comprising n-channel semiconductor material
KR100561357B1 (ko) * 2003-11-21 2006-03-16 삼성전자주식회사 나프탈렌테트라카르복시디이미드 유도체 및 이를 이용한전자사진 감광체
US20050214471A1 (en) * 2003-12-31 2005-09-29 James Theobald Molecular templating of a surface
CA2554302C (en) * 2004-01-26 2013-03-26 Northwestern University Perylene n-type semiconductors and related devices
JP4627528B2 (ja) 2004-03-29 2011-02-09 三井化学株式会社 新規化合物、および該化合物を用いた有機エレクトロニクス素子
JP2006045165A (ja) 2004-08-09 2006-02-16 Mitsui Chemicals Inc テトラカルボン酸誘導体、および該化合物を用いた電子写真感光体、電子写真装置
US7422777B2 (en) * 2005-11-22 2008-09-09 Eastman Kodak Company N,N′-dicycloalkyl-substituted naphthalene-based tetracarboxylic diimide compounds as n-type semiconductor materials for thin film transistors

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