JP2008524846A5 - - Google Patents

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Publication number
JP2008524846A5
JP2008524846A5 JP2007546723A JP2007546723A JP2008524846A5 JP 2008524846 A5 JP2008524846 A5 JP 2008524846A5 JP 2007546723 A JP2007546723 A JP 2007546723A JP 2007546723 A JP2007546723 A JP 2007546723A JP 2008524846 A5 JP2008524846 A5 JP 2008524846A5
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JP
Japan
Prior art keywords
fluorine
thin film
semiconductor material
carbocyclic
compound
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2007546723A
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English (en)
Japanese (ja)
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JP2008524846A (ja
Filing date
Publication date
Priority claimed from US11/015,897 external-priority patent/US7326956B2/en
Application filed filed Critical
Publication of JP2008524846A publication Critical patent/JP2008524846A/ja
Publication of JP2008524846A5 publication Critical patent/JP2008524846A5/ja
Pending legal-status Critical Current

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JP2007546723A 2004-12-17 2005-12-02 薄膜トランジスタのためのn型半導体材料 Pending JP2008524846A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US11/015,897 US7326956B2 (en) 2004-12-17 2004-12-17 Fluorine-containing N,N′-diaryl perylene-based tetracarboxylic diimide compounds as N-type semiconductor materials for thin film transistors
PCT/US2005/043505 WO2006065548A2 (en) 2004-12-17 2005-12-02 N-type semiconductor materials for thin film transistors

Publications (2)

Publication Number Publication Date
JP2008524846A JP2008524846A (ja) 2008-07-10
JP2008524846A5 true JP2008524846A5 (enExample) 2008-12-11

Family

ID=36588362

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2007546723A Pending JP2008524846A (ja) 2004-12-17 2005-12-02 薄膜トランジスタのためのn型半導体材料

Country Status (7)

Country Link
US (1) US7326956B2 (enExample)
EP (1) EP1825533A2 (enExample)
JP (1) JP2008524846A (enExample)
KR (1) KR20070098807A (enExample)
CN (1) CN101084589A (enExample)
TW (1) TW200633285A (enExample)
WO (1) WO2006065548A2 (enExample)

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KR101148868B1 (ko) * 2004-01-26 2012-05-29 노오쓰웨스턴 유니버시티 페릴렌 n-형 반도체 및 관련된 소자
US7198977B2 (en) * 2004-12-21 2007-04-03 Eastman Kodak Company N,N′-di(phenylalky)-substituted perylene-based tetracarboxylic diimide compounds as n-type semiconductor materials for thin film transistors
GB0506899D0 (en) 2005-04-05 2005-05-11 Plastic Logic Ltd Multiple conductive layer TFT
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US7569693B2 (en) * 2006-06-12 2009-08-04 Northwestern University Naphthalene-based semiconductor materials and methods of preparing and use thereof
EP2089398A2 (en) * 2006-10-25 2009-08-19 Polyera Corporation Organic semiconductor materials and methods of preparing and use thereof
EP2086974B1 (en) * 2006-11-17 2013-07-24 Polyera Corporation Diimide-based semiconductor materials and methods of preparing and using the same
EP2104676A2 (en) * 2007-01-08 2009-09-30 Polyera Corporation Methods for preparing arene-bis(dicarboximide)-based semiconducting materials and related intermediates for preparing same
CN100456517C (zh) * 2007-01-23 2009-01-28 中国科学院长春应用化学研究所 轴向取代酞菁化合物用于制备有机薄膜晶体管的应用
WO2008091670A2 (en) * 2007-01-24 2008-07-31 Polyera Corporation Organic semiconductor materials and precursors thereof
US7649199B2 (en) * 2008-04-11 2010-01-19 Eastman Kodak Company N-type semiconductor materials in thin film transistors and electronic devices
KR101012542B1 (ko) * 2008-12-12 2011-02-07 재단법인대구경북과학기술원 고분자 화합물 및 그를 포함하는 태양전지
KR101429370B1 (ko) 2009-10-29 2014-08-11 다이니치 세이카 고교 가부시키가이샤 유기 반도체 재료, 유기 반도체 박막 및 유기 박막 트랜지스터
JP5643215B2 (ja) 2009-10-29 2014-12-17 大日精化工業株式会社 ペリレンテトラカルボキシジイミド誘導体
US8283469B2 (en) * 2010-03-24 2012-10-09 National Tsing Hua University Perylene diimide derivative and organic semiconductor element using the same material
US8530270B2 (en) 2010-04-30 2013-09-10 Eastman Kodak Company Methods of preparing semiconductive compositions and devices
US20110269966A1 (en) * 2010-04-30 2011-11-03 Deepak Shukla Semiconducting articles
US8314265B2 (en) 2010-04-30 2012-11-20 Eastman Kodak Company Aromatic amic acids or amic esters and compositions
US8411489B2 (en) 2010-04-30 2013-04-02 Eastman Kodak Company Semiconducting devices and methods of preparing
US8404892B2 (en) 2010-05-27 2013-03-26 Eastman Kodak Company Aromatic amic acid salts and compositions
EP2613375B1 (en) 2010-08-29 2021-01-13 Shinshu University Dispersion liquid for forming organic semiconductor film
JP2014514256A (ja) 2011-03-03 2014-06-19 ビーエーエスエフ ソシエタス・ヨーロピア ペリレン系半導体材料
US8471020B2 (en) 2011-03-03 2013-06-25 Basf Se Perylene-based semiconducting materials
KR20140021014A (ko) * 2011-05-11 2014-02-19 바스프 에스이 할로겐화 페릴렌계 반도체 물질
WO2013024026A1 (en) 2011-08-12 2013-02-21 Basf Se Fluorinated perylene-based semiconducting materials
CN105862133B (zh) * 2015-01-23 2021-04-13 国家纳米科学中心 一种n型有机半导体晶体材料及其制备方法和用途
JP7464397B2 (ja) * 2020-01-31 2024-04-09 保土谷化学工業株式会社 ペリレン誘導体化合物、該化合物を用いた有機半導体用組成物、該有機半導体用組成物を用いた有機薄膜トランジスタ
CN111892605B (zh) * 2020-06-10 2021-11-02 中国科学院化学研究所 新型五元环苝二酰亚胺分子材料及其制备方法与应用
WO2023187690A1 (en) * 2022-03-30 2023-10-05 Oti Lumionics Inc. Nitrogen-containing heterocyclic compounds for forming a patterning coating and devices incorporating same
CN116768892B (zh) * 2023-05-26 2025-10-31 西北工业大学太仓长三角研究院 一种硫代苝二酰亚胺的n型光敏场效应晶体管材料

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