JP2009516930A5 - - Google Patents

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Publication number
JP2009516930A5
JP2009516930A5 JP2008542331A JP2008542331A JP2009516930A5 JP 2009516930 A5 JP2009516930 A5 JP 2009516930A5 JP 2008542331 A JP2008542331 A JP 2008542331A JP 2008542331 A JP2008542331 A JP 2008542331A JP 2009516930 A5 JP2009516930 A5 JP 2009516930A5
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JP
Japan
Prior art keywords
thin film
semiconductor material
organic
compound
alicyclic
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2008542331A
Other languages
English (en)
Japanese (ja)
Other versions
JP2009516930A (ja
Filing date
Publication date
Priority claimed from US11/285,238 external-priority patent/US7422777B2/en
Application filed filed Critical
Publication of JP2009516930A publication Critical patent/JP2009516930A/ja
Publication of JP2009516930A5 publication Critical patent/JP2009516930A5/ja
Pending legal-status Critical Current

Links

JP2008542331A 2005-11-22 2006-11-07 半導体材料としてのナフタレン系テトラカルボン酸ジイミド Pending JP2009516930A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US11/285,238 US7422777B2 (en) 2005-11-22 2005-11-22 N,N′-dicycloalkyl-substituted naphthalene-based tetracarboxylic diimide compounds as n-type semiconductor materials for thin film transistors
PCT/US2006/043200 WO2007061614A1 (en) 2005-11-22 2006-11-07 Naphthalene based tetracarboxylic diimides as semiconductor materials

Publications (2)

Publication Number Publication Date
JP2009516930A JP2009516930A (ja) 2009-04-23
JP2009516930A5 true JP2009516930A5 (enExample) 2009-12-17

Family

ID=37733692

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2008542331A Pending JP2009516930A (ja) 2005-11-22 2006-11-07 半導体材料としてのナフタレン系テトラカルボン酸ジイミド

Country Status (6)

Country Link
US (1) US7422777B2 (enExample)
EP (1) EP1952453B1 (enExample)
JP (1) JP2009516930A (enExample)
KR (1) KR20080073303A (enExample)
TW (1) TWI416721B (enExample)
WO (1) WO2007061614A1 (enExample)

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KR101148868B1 (ko) * 2004-01-26 2012-05-29 노오쓰웨스턴 유니버시티 페릴렌 ｎ-형 반도체 및 관련된 소자
US7569693B2 (en) * 2006-06-12 2009-08-04 Northwestern University Naphthalene-based semiconductor materials and methods of preparing and use thereof
EP2089398A2 (en) * 2006-10-25 2009-08-19 Polyera Corporation Organic semiconductor materials and methods of preparing and use thereof
EP2086974B1 (en) 2006-11-17 2013-07-24 Polyera Corporation Diimide-based semiconductor materials and methods of preparing and using the same
WO2008063583A1 (en) * 2006-11-17 2008-05-29 Polyera Corporation Acene-based organic semiconductor materials and methods of preparing and using the same
US7804087B2 (en) * 2006-12-07 2010-09-28 Eastman Kodak Company Configurationally controlled N,N'-Dicycloalkyl-substituted naphthalene-based tetracarboxylic diimide compounds as N-type semiconductor materials for thin film transistors
EP2104676A2 (en) * 2007-01-08 2009-09-30 Polyera Corporation Methods for preparing arene-bis(dicarboximide)-based semiconducting materials and related intermediates for preparing same
WO2008091670A2 (en) * 2007-01-24 2008-07-31 Polyera Corporation Organic semiconductor materials and precursors thereof
US7858970B2 (en) * 2007-06-29 2010-12-28 Eastman Kodak Company Heterocycloalkyl-substituted naphthalene-based tetracarboxylic diimide compounds as N-type semiconductor materials for thin film transistors
US8963126B2 (en) * 2008-01-07 2015-02-24 The Johns Hopkins University Low-voltage, N-channel transistors including a hybrid semiconductor-dielectric material
KR20160029863A (ko) * 2008-02-05 2016-03-15 바스프 에스이 페릴렌 반도체 및 이의 제조 방법 및 용도
JP2011515505A (ja) * 2008-02-05 2011-05-19 ビーエーエスエフ ソシエタス・ヨーロピア ペリレン−イミド半導体ポリマー
US7649199B2 (en) * 2008-04-11 2010-01-19 Eastman Kodak Company N-type semiconductor materials in thin film transistors and electronic devices
KR101694877B1 (ko) * 2009-10-16 2017-01-11 삼성전자주식회사 그라핀 소자 및 그 제조 방법
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US8314265B2 (en) 2010-04-30 2012-11-20 Eastman Kodak Company Aromatic amic acids or amic esters and compositions
US8411489B2 (en) 2010-04-30 2013-04-02 Eastman Kodak Company Semiconducting devices and methods of preparing
US8530270B2 (en) 2010-04-30 2013-09-10 Eastman Kodak Company Methods of preparing semiconductive compositions and devices
US20110269966A1 (en) * 2010-04-30 2011-11-03 Deepak Shukla Semiconducting articles
US8404892B2 (en) 2010-05-27 2013-03-26 Eastman Kodak Company Aromatic amic acid salts and compositions
US8450726B2 (en) 2010-05-27 2013-05-28 Eastman Kodak Company Articles containing coatings of amic acid salts
US8431433B2 (en) 2010-05-27 2013-04-30 Eastman Kodak Company Methods of providing semiconductor layers from amic acid salts
DE102011013897A1 (de) * 2011-03-11 2012-09-13 Technische Universität Dresden Organische Solarzelle
US8692238B2 (en) 2012-04-25 2014-04-08 Eastman Kodak Company Semiconductor devices and methods of preparation
US8779415B2 (en) 2012-11-08 2014-07-15 Eastman Kodak Company Devices containing organic polymeric multi-metallic composites
KR101490104B1 (ko) * 2013-06-12 2015-03-25 경상대학교산학협력단 나프탈렌 다이이미드 유도체 화합물 및 제조방법과 이를 포함하는 유기전자소자
WO2015191293A1 (en) 2014-06-11 2015-12-17 Eastman Kodak Company Devices having dielectric layers with thiosulfate-containing polymers
JP2021082619A (ja) * 2018-03-16 2021-05-27 国立大学法人大阪大学 ｎ型有機半導体材料及びそれを含有する有機半導体膜並びに有機薄膜トランジスタ
US12490574B2 (en) * 2021-02-08 2025-12-02 Uif (University Industry Foundation), Yonsei University Skin-conformable biosignal monitoring sensor by applying organic-inorganic hybrid photo transistor and manufacturing method thereof

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US7629605B2 (en) * 2005-10-31 2009-12-08 Eastman Kodak Company N-type semiconductor materials for thin film transistors

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