KR20080073303A - 반도체 물질로서의 나프탈렌계 테트라카복실릭 다이이미드 - Google Patents

반도체 물질로서의 나프탈렌계 테트라카복실릭 다이이미드 Download PDF

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Publication number
KR20080073303A
KR20080073303A KR1020087012156A KR20087012156A KR20080073303A KR 20080073303 A KR20080073303 A KR 20080073303A KR 1020087012156 A KR1020087012156 A KR 1020087012156A KR 20087012156 A KR20087012156 A KR 20087012156A KR 20080073303 A KR20080073303 A KR 20080073303A
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KR
South Korea
Prior art keywords
thin film
groups
naphthalene
organic
substituted
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
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KR1020087012156A
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English (en)
Korean (ko)
Inventor
디팩 슈클라
디앤 캐롤 프리만
쉘비 포레스터 넬손
제프리 토드 카레이
웬디 지 아해른
Original Assignee
이스트맨 코닥 캄파니
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Application filed by 이스트맨 코닥 캄파니 filed Critical 이스트맨 코닥 캄파니
Publication of KR20080073303A publication Critical patent/KR20080073303A/ko
Ceased legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09B—ORGANIC DYES OR CLOSELY-RELATED COMPOUNDS FOR PRODUCING DYES, e.g. PIGMENTS; MORDANTS; LAKES
    • C09B57/00—Other synthetic dyes of known constitution
    • C09B57/08—Naphthalimide dyes; Phthalimide dyes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/60—Organic compounds having low molecular weight
    • H10K85/615—Polycyclic condensed aromatic hydrocarbons, e.g. anthracene
    • H10K85/621—Aromatic anhydride or imide compounds, e.g. perylene tetra-carboxylic dianhydride or perylene tetracarboxylic di-imide
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K2323/00—Functional layers of liquid crystal optical display excluding electroactive liquid crystal layer characterised by chemical composition
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462—Insulated gate field-effect transistors [IGFETs]
    • H10K10/466—Lateral bottom-gate IGFETs comprising only a single gate
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/549—Organic PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/31504—Composite [nonstructural laminate]
    • Y10T428/31721—Of polyimide

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  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Physics & Mathematics (AREA)
  • Materials Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Composite Materials (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Thin Film Transistor (AREA)
  • Photovoltaic Devices (AREA)
  • Nitrogen Condensed Heterocyclic Rings (AREA)
KR1020087012156A 2005-11-22 2006-11-07 반도체 물질로서의 나프탈렌계 테트라카복실릭 다이이미드 Ceased KR20080073303A (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US11/285,238 US7422777B2 (en) 2005-11-22 2005-11-22 N,N′-dicycloalkyl-substituted naphthalene-based tetracarboxylic diimide compounds as n-type semiconductor materials for thin film transistors
US11/285,238 2005-11-22

Publications (1)

Publication Number Publication Date
KR20080073303A true KR20080073303A (ko) 2008-08-08

Family

ID=37733692

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020087012156A Ceased KR20080073303A (ko) 2005-11-22 2006-11-07 반도체 물질로서의 나프탈렌계 테트라카복실릭 다이이미드

Country Status (6)

Country Link
US (1) US7422777B2 (enExample)
EP (1) EP1952453B1 (enExample)
JP (1) JP2009516930A (enExample)
KR (1) KR20080073303A (enExample)
TW (1) TWI416721B (enExample)
WO (1) WO2007061614A1 (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2014200249A1 (ko) * 2013-06-12 2014-12-18 경상대학교산학협력단 나프탈렌 다이이미드 유도체 화합물 및 제조방법과 이를 포함하는 유기전자소자

Families Citing this family (29)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1980791B (zh) * 2004-01-26 2012-08-22 西北大学 苝n-型半导体和相关器件
US7569693B2 (en) 2006-06-12 2009-08-04 Northwestern University Naphthalene-based semiconductor materials and methods of preparing and use thereof
EP2089398A2 (en) * 2006-10-25 2009-08-19 Polyera Corporation Organic semiconductor materials and methods of preparing and use thereof
US7902363B2 (en) 2006-11-17 2011-03-08 Polyera Corporation Diimide-based semiconductor materials and methods of preparing and using the same
WO2008063583A1 (en) * 2006-11-17 2008-05-29 Polyera Corporation Acene-based organic semiconductor materials and methods of preparing and using the same
US7804087B2 (en) * 2006-12-07 2010-09-28 Eastman Kodak Company Configurationally controlled N,N'-Dicycloalkyl-substituted naphthalene-based tetracarboxylic diimide compounds as N-type semiconductor materials for thin film transistors
WO2008085942A2 (en) * 2007-01-08 2008-07-17 Polyera Corporation Methods for preparing arene-bis(dicarboximide)-based semiconducting materials and related intermediates for preparing same
WO2008091670A2 (en) * 2007-01-24 2008-07-31 Polyera Corporation Organic semiconductor materials and precursors thereof
US7858970B2 (en) * 2007-06-29 2010-12-28 Eastman Kodak Company Heterocycloalkyl-substituted naphthalene-based tetracarboxylic diimide compounds as N-type semiconductor materials for thin film transistors
WO2009108397A1 (en) * 2008-01-07 2009-09-03 The Johns Hopkins University Devices having high dielectric-constant, ionically-polarizable materials
EP2240970B1 (en) * 2008-02-05 2018-03-14 Basf Se Perylene semiconductors and methods of preparation and use thereof
TWI427098B (zh) * 2008-02-05 2014-02-21 Basf Se 由芮－（π－受體）共聚物製備之半導體材料
US7649199B2 (en) 2008-04-11 2010-01-19 Eastman Kodak Company N-type semiconductor materials in thin film transistors and electronic devices
KR101694877B1 (ko) * 2009-10-16 2017-01-11 삼성전자주식회사 그라핀 소자 및 그 제조 방법
US8212243B2 (en) * 2010-01-22 2012-07-03 Eastman Kodak Company Organic semiconducting compositions and N-type semiconductor devices
US8309394B2 (en) * 2010-01-22 2012-11-13 Eastman Kodak Company Method of making N-type semiconductor devices
US8530270B2 (en) 2010-04-30 2013-09-10 Eastman Kodak Company Methods of preparing semiconductive compositions and devices
US8411489B2 (en) 2010-04-30 2013-04-02 Eastman Kodak Company Semiconducting devices and methods of preparing
US8314265B2 (en) 2010-04-30 2012-11-20 Eastman Kodak Company Aromatic amic acids or amic esters and compositions
US20110269966A1 (en) 2010-04-30 2011-11-03 Deepak Shukla Semiconducting articles
US8450726B2 (en) * 2010-05-27 2013-05-28 Eastman Kodak Company Articles containing coatings of amic acid salts
US8431433B2 (en) 2010-05-27 2013-04-30 Eastman Kodak Company Methods of providing semiconductor layers from amic acid salts
US8404892B2 (en) 2010-05-27 2013-03-26 Eastman Kodak Company Aromatic amic acid salts and compositions
DE102011013897A1 (de) * 2011-03-11 2012-09-13 Technische Universität Dresden Organische Solarzelle
US8692238B2 (en) 2012-04-25 2014-04-08 Eastman Kodak Company Semiconductor devices and methods of preparation
US8779415B2 (en) 2012-11-08 2014-07-15 Eastman Kodak Company Devices containing organic polymeric multi-metallic composites
EP3155623B1 (en) 2014-06-11 2019-05-08 Eastman Kodak Company Devices having dielectric layers with thiosulfate-containing polymers
JP2021082619A (ja) * 2018-03-16 2021-05-27 国立大学法人大阪大学 ｎ型有機半導体材料及びそれを含有する有機半導体膜並びに有機薄膜トランジスタ
US12490574B2 (en) * 2021-02-08 2025-12-02 Uif (University Industry Foundation), Yonsei University Skin-conformable biosignal monitoring sensor by applying organic-inorganic hybrid photo transistor and manufacturing method thereof

Family Cites Families (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2636421A1 (de) 1976-08-13 1978-02-16 Basf Ag Elektrisch leitfaehige perylenderivate
DE2951349A1 (de) 1979-12-20 1981-07-02 Bayer Ag, 5090 Leverkusen Naphthalintetracarbonsaeurediimide als elektrische halbleiter und photoleiter
US4578334A (en) 1984-11-23 1986-03-25 Eastman Kodak Company Multi-active photoconductive insulating elements and method for their manufacture
DE3526249A1 (de) 1985-07-23 1987-01-29 Hoechst Ag Elektrophotographisches aufzeichnungsmaterial
US4719163A (en) 1986-06-19 1988-01-12 Eastman Kodak Company Multi-active photoconductive insulating elements exhibiting far red sensitivity
US5468583A (en) * 1994-12-28 1995-11-21 Eastman Kodak Company Cyclic bis-dicarboximide electron transport compounds for electrophotography
US6387727B1 (en) * 1999-03-29 2002-05-14 Agere Systems Guardian Corp. Device comprising n-channel semiconductor material
JP3369515B2 (ja) * 1999-07-28 2003-01-20 京セラミタ株式会社 フタロシアニン結晶及びその製造方法と、これを含有した電子写真感光体
DE20021356U1 (de) 2000-12-18 2001-02-22 Basf Ag, 67063 Ludwigshafen Polyvinylchlorid mit kernhydrierten Phthalat-Weichmachern
US20020192397A1 (en) * 2001-02-20 2002-12-19 Fuji Photo Film Co., Ltd. Polarizing plate protection film
US6844033B2 (en) * 2001-03-01 2005-01-18 Konica Corporation Cellulose ester film, its manufacturing method, polarizing plate, and liquid crystal display
JP4792677B2 (ja) * 2001-04-25 2011-10-12 コニカミノルタホールディングス株式会社 セルロースエステルフィルム
US6977275B2 (en) 2002-01-16 2005-12-20 Eastman Chemical Company Carbohydrate esters and polyol esters as plasticizers for polymers, compositions and articles including such plasticizers and methods of using the same
JP2004014982A (ja) * 2002-06-11 2004-01-15 Konica Minolta Holdings Inc 半導体回路および画像表示装置
KR100513700B1 (ko) * 2003-07-04 2005-09-09 삼성전자주식회사 나프탈렌테트라카르복시디이미드 유도체 및 이를 포함하는전자사진감광체
JP2005208617A (ja) * 2003-12-26 2005-08-04 Canon Inc 電子写真感光体、電子写真感光体の製造方法、プロセスカートリッジおよび電子写真装置
CN1980791B (zh) * 2004-01-26 2012-08-22 西北大学 苝n-型半导体和相关器件
US7838871B2 (en) * 2004-03-24 2010-11-23 Samsung Mobile Display Co., Ltd. Organic field-effect transistor, flat panel display device including the same, and a method of manufacturing the organic field-effect transistor
US7579619B2 (en) * 2005-04-20 2009-08-25 Eastman Kodak Company N,N′-di(arylalkyl)-substituted naphthalene-based tetracarboxylic diimide compounds as n-type semiconductor materials for thin film transistors
US7629605B2 (en) * 2005-10-31 2009-12-08 Eastman Kodak Company N-type semiconductor materials for thin film transistors

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2014200249A1 (ko) * 2013-06-12 2014-12-18 경상대학교산학협력단 나프탈렌 다이이미드 유도체 화합물 및 제조방법과 이를 포함하는 유기전자소자
KR101490104B1 (ko) * 2013-06-12 2015-03-25 경상대학교산학협력단 나프탈렌 다이이미드 유도체 화합물 및 제조방법과 이를 포함하는 유기전자소자

Also Published As

Publication number Publication date
TWI416721B (zh) 2013-11-21
TW200733378A (en) 2007-09-01
US20070116895A1 (en) 2007-05-24
EP1952453A1 (en) 2008-08-06
US7422777B2 (en) 2008-09-09
WO2007061614A1 (en) 2007-05-31
EP1952453B1 (en) 2016-07-27
JP2009516930A (ja) 2009-04-23

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