TWI416721B - 作為ｎ型半導體材料之經ｎ，ｎ’-二環烷基取代之以萘為主的四羧酸二醯亞胺 - Google Patents
作為ｎ型半導體材料之經ｎ，ｎ’-二環烷基取代之以萘為主的四羧酸二醯亞胺 Download PDFInfo
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- 238000005286 illumination Methods 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- PZOUSPYUWWUPPK-UHFFFAOYSA-N indole Natural products CC1=CC=CC2=C1C=CN2 PZOUSPYUWWUPPK-UHFFFAOYSA-N 0.000 description 1
- RKJUIXBNRJVNHR-UHFFFAOYSA-N indolenine Natural products C1=CC=C2CC=NC2=C1 RKJUIXBNRJVNHR-UHFFFAOYSA-N 0.000 description 1
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- MZYHMUONCNKCHE-UHFFFAOYSA-N naphthalene-1,2,3,4-tetracarboxylic acid Chemical compound C1=CC=CC2=C(C(O)=O)C(C(=O)O)=C(C(O)=O)C(C(O)=O)=C21 MZYHMUONCNKCHE-UHFFFAOYSA-N 0.000 description 1
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- CSHWQDPOILHKBI-UHFFFAOYSA-N peryrene Natural products C1=CC(C2=CC=CC=3C2=C2C=CC=3)=C3C2=CC=CC3=C1 CSHWQDPOILHKBI-UHFFFAOYSA-N 0.000 description 1
- 125000001997 phenyl group Chemical group [H]C1=C([H])C([H])=C(*)C([H])=C1[H] 0.000 description 1
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- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 1
- 229920000636 poly(norbornene) polymer Polymers 0.000 description 1
- 229920001467 poly(styrenesulfonates) Polymers 0.000 description 1
- 229920000058 polyacrylate Polymers 0.000 description 1
- 229920002647 polyamide Polymers 0.000 description 1
- 239000004417 polycarbonate Substances 0.000 description 1
- 229920000515 polycarbonate Polymers 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 229920001470 polyketone Polymers 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 229920001955 polyphenylene ether Polymers 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 238000007639 printing Methods 0.000 description 1
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- 230000005855 radiation Effects 0.000 description 1
- 229910052703 rhodium Inorganic materials 0.000 description 1
- 239000010948 rhodium Substances 0.000 description 1
- MHOVAHRLVXNVSD-UHFFFAOYSA-N rhodium atom Chemical compound [Rh] MHOVAHRLVXNVSD-UHFFFAOYSA-N 0.000 description 1
- 238000005096 rolling process Methods 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
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- 230000003335 steric effect Effects 0.000 description 1
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- 125000005504 styryl group Chemical group 0.000 description 1
- 125000003107 substituted aryl group Chemical group 0.000 description 1
- 125000005346 substituted cycloalkyl group Chemical group 0.000 description 1
- BDHFUVZGWQCTTF-UHFFFAOYSA-M sulfonate Chemical compound [O-]S(=O)=O BDHFUVZGWQCTTF-UHFFFAOYSA-M 0.000 description 1
- 229910052717 sulfur Inorganic materials 0.000 description 1
- 239000011593 sulfur Substances 0.000 description 1
- 238000003786 synthesis reaction Methods 0.000 description 1
- 125000000999 tert-butyl group Chemical group [H]C([H])([H])C(*)(C([H])([H])[H])C([H])([H])[H] 0.000 description 1
- 238000002207 thermal evaporation Methods 0.000 description 1
- 125000003396 thiol group Chemical class [H]S* 0.000 description 1
- LLZRNZOLAXHGLL-UHFFFAOYSA-J titanic acid Chemical compound O[Ti](O)(O)O LLZRNZOLAXHGLL-UHFFFAOYSA-J 0.000 description 1
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 1
- 238000001771 vacuum deposition Methods 0.000 description 1
- 125000000391 vinyl group Chemical group [H]C([*])=C([H])[H] 0.000 description 1
- 239000004246 zinc acetate Substances 0.000 description 1
- 229910052984 zinc sulfide Inorganic materials 0.000 description 1
- DRDVZXDWVBGGMH-UHFFFAOYSA-N zinc;sulfide Chemical compound [S-2].[Zn+2] DRDVZXDWVBGGMH-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09B—ORGANIC DYES OR CLOSELY-RELATED COMPOUNDS FOR PRODUCING DYES, e.g. PIGMENTS; MORDANTS; LAKES
- C09B57/00—Other synthetic dyes of known constitution
- C09B57/08—Naphthalimide dyes; Phthalimide dyes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/60—Organic compounds having low molecular weight
- H10K85/615—Polycyclic condensed aromatic hydrocarbons, e.g. anthracene
- H10K85/621—Aromatic anhydride or imide compounds, e.g. perylene tetra-carboxylic dianhydride or perylene tetracarboxylic di-imide
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K2323/00—Functional layers of liquid crystal optical display excluding electroactive liquid crystal layer characterised by chemical composition
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
- H10K10/40—Organic transistors
- H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
- H10K10/462—Insulated gate field-effect transistors [IGFETs]
- H10K10/466—Lateral bottom-gate IGFETs comprising only a single gate
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/549—Organic PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/31504—Composite [nonstructural laminate]
- Y10T428/31721—Of polyimide
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Nanotechnology (AREA)
- Physics & Mathematics (AREA)
- Materials Engineering (AREA)
- Crystallography & Structural Chemistry (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Composite Materials (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Mathematical Physics (AREA)
- Theoretical Computer Science (AREA)
- Organic Chemistry (AREA)
- Thin Film Transistor (AREA)
- Nitrogen Condensed Heterocyclic Rings (AREA)
- Photovoltaic Devices (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US11/285,238 US7422777B2 (en) | 2005-11-22 | 2005-11-22 | N,N′-dicycloalkyl-substituted naphthalene-based tetracarboxylic diimide compounds as n-type semiconductor materials for thin film transistors |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW200733378A TW200733378A (en) | 2007-09-01 |
| TWI416721B true TWI416721B (zh) | 2013-11-21 |
Family
ID=37733692
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW95142933A TWI416721B (zh) | 2005-11-22 | 2006-11-21 | 作為ｎ型半導體材料之經ｎ，ｎ’-二環烷基取代之以萘為主的四羧酸二醯亞胺 |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US7422777B2 (enExample) |
| EP (1) | EP1952453B1 (enExample) |
| JP (1) | JP2009516930A (enExample) |
| KR (1) | KR20080073303A (enExample) |
| TW (1) | TWI416721B (enExample) |
| WO (1) | WO2007061614A1 (enExample) |
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| JP4921982B2 (ja) * | 2004-01-26 | 2012-04-25 | ノースウエスタン ユニバーシティ | ペリレンｎ型半導体及び関連装置 |
| WO2007146250A2 (en) * | 2006-06-12 | 2007-12-21 | Northwestern University | Naphthalene-based semiconductor materials and methods of preparing and use thereof |
| WO2008051552A2 (en) * | 2006-10-25 | 2008-05-02 | Northwestern University | Organic semiconductor materials and methods of preparing and use thereof |
| WO2008063609A2 (en) | 2006-11-17 | 2008-05-29 | Polyera Corporation | Diimide-based semiconductor materials and methods of preparing and using the same |
| WO2008063583A1 (en) * | 2006-11-17 | 2008-05-29 | Polyera Corporation | Acene-based organic semiconductor materials and methods of preparing and using the same |
| US7804087B2 (en) * | 2006-12-07 | 2010-09-28 | Eastman Kodak Company | Configurationally controlled N,N'-Dicycloalkyl-substituted naphthalene-based tetracarboxylic diimide compounds as N-type semiconductor materials for thin film transistors |
| EP2104676A2 (en) * | 2007-01-08 | 2009-09-30 | Polyera Corporation | Methods for preparing arene-bis(dicarboximide)-based semiconducting materials and related intermediates for preparing same |
| US8022214B2 (en) * | 2007-01-24 | 2011-09-20 | Polyera Corporation | Organic semiconductor materials and precursors thereof |
| US7858970B2 (en) * | 2007-06-29 | 2010-12-28 | Eastman Kodak Company | Heterocycloalkyl-substituted naphthalene-based tetracarboxylic diimide compounds as N-type semiconductor materials for thin film transistors |
| WO2009089283A2 (en) * | 2008-01-07 | 2009-07-16 | The Johns Hopkins University | Low-voltage, n-channel hybrid transistors |
| CN101952988B (zh) * | 2008-02-05 | 2015-12-16 | 巴斯夫欧洲公司 | 苝半导体及其制备方法和用途 |
| JP5683274B2 (ja) * | 2008-02-05 | 2015-03-11 | ビーエーエスエフ ソシエタス・ヨーロピアＢａｓｆ Ｓｅ | リレン−（π−受容体）コポリマーから製造される半導体材料 |
| US7649199B2 (en) * | 2008-04-11 | 2010-01-19 | Eastman Kodak Company | N-type semiconductor materials in thin film transistors and electronic devices |
| KR101694877B1 (ko) * | 2009-10-16 | 2017-01-11 | 삼성전자주식회사 | 그라핀 소자 및 그 제조 방법 |
| US8309394B2 (en) * | 2010-01-22 | 2012-11-13 | Eastman Kodak Company | Method of making N-type semiconductor devices |
| US8212243B2 (en) * | 2010-01-22 | 2012-07-03 | Eastman Kodak Company | Organic semiconducting compositions and N-type semiconductor devices |
| US8530270B2 (en) | 2010-04-30 | 2013-09-10 | Eastman Kodak Company | Methods of preparing semiconductive compositions and devices |
| US8411489B2 (en) | 2010-04-30 | 2013-04-02 | Eastman Kodak Company | Semiconducting devices and methods of preparing |
| US8314265B2 (en) | 2010-04-30 | 2012-11-20 | Eastman Kodak Company | Aromatic amic acids or amic esters and compositions |
| US20110269966A1 (en) | 2010-04-30 | 2011-11-03 | Deepak Shukla | Semiconducting articles |
| US8450726B2 (en) | 2010-05-27 | 2013-05-28 | Eastman Kodak Company | Articles containing coatings of amic acid salts |
| US8404892B2 (en) | 2010-05-27 | 2013-03-26 | Eastman Kodak Company | Aromatic amic acid salts and compositions |
| US8431433B2 (en) | 2010-05-27 | 2013-04-30 | Eastman Kodak Company | Methods of providing semiconductor layers from amic acid salts |
| DE102011013897A1 (de) * | 2011-03-11 | 2012-09-13 | Technische Universität Dresden | Organische Solarzelle |
| US8692238B2 (en) | 2012-04-25 | 2014-04-08 | Eastman Kodak Company | Semiconductor devices and methods of preparation |
| US8779415B2 (en) | 2012-11-08 | 2014-07-15 | Eastman Kodak Company | Devices containing organic polymeric multi-metallic composites |
| KR101490104B1 (ko) * | 2013-06-12 | 2015-03-25 | 경상대학교산학협력단 | 나프탈렌 다이이미드 유도체 화합물 및 제조방법과 이를 포함하는 유기전자소자 |
| WO2015191293A1 (en) | 2014-06-11 | 2015-12-17 | Eastman Kodak Company | Devices having dielectric layers with thiosulfate-containing polymers |
| JP2021082619A (ja) * | 2018-03-16 | 2021-05-27 | 国立大学法人大阪大学 | ｎ型有機半導体材料及びそれを含有する有機半導体膜並びに有機薄膜トランジスタ |
| US12490574B2 (en) * | 2021-02-08 | 2025-12-02 | Uif (University Industry Foundation), Yonsei University | Skin-conformable biosignal monitoring sensor by applying organic-inorganic hybrid photo transistor and manufacturing method thereof |
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| US6387727B1 (en) * | 1999-03-29 | 2002-05-14 | Agere Systems Guardian Corp. | Device comprising n-channel semiconductor material |
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| US20050176970A1 (en) * | 2004-01-26 | 2005-08-11 | Marks Tobin J. | Perylene n-type semiconductors and related devices |
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| DE2636421A1 (de) | 1976-08-13 | 1978-02-16 | Basf Ag | Elektrisch leitfaehige perylenderivate |
| DE2951349A1 (de) | 1979-12-20 | 1981-07-02 | Bayer Ag, 5090 Leverkusen | Naphthalintetracarbonsaeurediimide als elektrische halbleiter und photoleiter |
| US4578334A (en) | 1984-11-23 | 1986-03-25 | Eastman Kodak Company | Multi-active photoconductive insulating elements and method for their manufacture |
| DE3526249A1 (de) | 1985-07-23 | 1987-01-29 | Hoechst Ag | Elektrophotographisches aufzeichnungsmaterial |
| US4719163A (en) | 1986-06-19 | 1988-01-12 | Eastman Kodak Company | Multi-active photoconductive insulating elements exhibiting far red sensitivity |
| JP3369515B2 (ja) * | 1999-07-28 | 2003-01-20 | 京セラミタ株式会社 | フタロシアニン結晶及びその製造方法と、これを含有した電子写真感光体 |
| DE20021356U1 (de) | 2000-12-18 | 2001-02-22 | Basf Ag, 67063 Ludwigshafen | Polyvinylchlorid mit kernhydrierten Phthalat-Weichmachern |
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| US6977275B2 (en) | 2002-01-16 | 2005-12-20 | Eastman Chemical Company | Carbohydrate esters and polyol esters as plasticizers for polymers, compositions and articles including such plasticizers and methods of using the same |
| JP2004014982A (ja) * | 2002-06-11 | 2004-01-15 | Konica Minolta Holdings Inc | 半導体回路および画像表示装置 |
| KR100513700B1 (ko) * | 2003-07-04 | 2005-09-09 | 삼성전자주식회사 | 나프탈렌테트라카르복시디이미드 유도체 및 이를 포함하는전자사진감광체 |
| JP2005208617A (ja) * | 2003-12-26 | 2005-08-04 | Canon Inc | 電子写真感光体、電子写真感光体の製造方法、プロセスカートリッジおよび電子写真装置 |
| US7838871B2 (en) * | 2004-03-24 | 2010-11-23 | Samsung Mobile Display Co., Ltd. | Organic field-effect transistor, flat panel display device including the same, and a method of manufacturing the organic field-effect transistor |
| US7579619B2 (en) * | 2005-04-20 | 2009-08-25 | Eastman Kodak Company | N,N′-di(arylalkyl)-substituted naphthalene-based tetracarboxylic diimide compounds as n-type semiconductor materials for thin film transistors |
| US7629605B2 (en) * | 2005-10-31 | 2009-12-08 | Eastman Kodak Company | N-type semiconductor materials for thin film transistors |
-
2005
- 2005-11-22 US US11/285,238 patent/US7422777B2/en active Active
-
2006
- 2006-11-07 WO PCT/US2006/043200 patent/WO2007061614A1/en not_active Ceased
- 2006-11-07 KR KR1020087012156A patent/KR20080073303A/ko not_active Ceased
- 2006-11-07 EP EP06836979.2A patent/EP1952453B1/en not_active Ceased
- 2006-11-07 JP JP2008542331A patent/JP2009516930A/ja active Pending
- 2006-11-21 TW TW95142933A patent/TWI416721B/zh not_active IP Right Cessation
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| US5468583A (en) * | 1994-12-28 | 1995-11-21 | Eastman Kodak Company | Cyclic bis-dicarboximide electron transport compounds for electrophotography |
| US6387727B1 (en) * | 1999-03-29 | 2002-05-14 | Agere Systems Guardian Corp. | Device comprising n-channel semiconductor material |
| US20020192397A1 (en) * | 2001-02-20 | 2002-12-19 | Fuji Photo Film Co., Ltd. | Polarizing plate protection film |
| US20030037703A1 (en) * | 2001-04-25 | 2003-02-27 | Koichi Saito | Cellulose ester film |
| US20050176970A1 (en) * | 2004-01-26 | 2005-08-11 | Marks Tobin J. | Perylene n-type semiconductors and related devices |
Also Published As
| Publication number | Publication date |
|---|---|
| KR20080073303A (ko) | 2008-08-08 |
| EP1952453B1 (en) | 2016-07-27 |
| WO2007061614A1 (en) | 2007-05-31 |
| TW200733378A (en) | 2007-09-01 |
| US7422777B2 (en) | 2008-09-09 |
| US20070116895A1 (en) | 2007-05-24 |
| JP2009516930A (ja) | 2009-04-23 |
| EP1952453A1 (en) | 2008-08-06 |
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