JP2009516930A - 半導体材料としてのナフタレン系テトラカルボン酸ジイミド - Google Patents

半導体材料としてのナフタレン系テトラカルボン酸ジイミド Download PDF

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Publication number
JP2009516930A
JP2009516930A JP2008542331A JP2008542331A JP2009516930A JP 2009516930 A JP2009516930 A JP 2009516930A JP 2008542331 A JP2008542331 A JP 2008542331A JP 2008542331 A JP2008542331 A JP 2008542331A JP 2009516930 A JP2009516930 A JP 2009516930A
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article
thin film
group
organic
substituted
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Japanese (ja)
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JP2009516930A5 (enExample
Inventor
シュクラ，ディーパック
キャロル フリーマン，ダイアン
フォレスター ネルソン，シェルビー
トッド キャリー，ジェフリー
ジー． アヘアン，ウェンディー
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イーストマン コダック カンパニー
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Publication of JP2009516930A publication Critical patent/JP2009516930A/ja
Publication of JP2009516930A5 publication Critical patent/JP2009516930A5/ja
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09B—ORGANIC DYES OR CLOSELY-RELATED COMPOUNDS FOR PRODUCING DYES, e.g. PIGMENTS; MORDANTS; LAKES
    • C09B57/00—Other synthetic dyes of known constitution
    • C09B57/08—Naphthalimide dyes; Phthalimide dyes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/60—Organic compounds having low molecular weight
    • H10K85/615—Polycyclic condensed aromatic hydrocarbons, e.g. anthracene
    • H10K85/621—Aromatic anhydride or imide compounds, e.g. perylene tetra-carboxylic dianhydride or perylene tetracarboxylic di-imide
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K2323/00—Functional layers of liquid crystal optical display excluding electroactive liquid crystal layer characterised by chemical composition
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462—Insulated gate field-effect transistors [IGFETs]
    • H10K10/466—Lateral bottom-gate IGFETs comprising only a single gate
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/549—Organic PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/31504—Composite [nonstructural laminate]
    • Y10T428/31721—Of polyimide

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  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Physics & Mathematics (AREA)
  • Materials Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Composite Materials (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Thin Film Transistor (AREA)
  • Nitrogen Condensed Heterocyclic Rings (AREA)
  • Photovoltaic Devices (AREA)
JP2008542331A 2005-11-22 2006-11-07 半導体材料としてのナフタレン系テトラカルボン酸ジイミド Pending JP2009516930A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US11/285,238 US7422777B2 (en) 2005-11-22 2005-11-22 N,N′-dicycloalkyl-substituted naphthalene-based tetracarboxylic diimide compounds as n-type semiconductor materials for thin film transistors
PCT/US2006/043200 WO2007061614A1 (en) 2005-11-22 2006-11-07 Naphthalene based tetracarboxylic diimides as semiconductor materials

Publications (2)

Publication Number Publication Date
JP2009516930A true JP2009516930A (ja) 2009-04-23
JP2009516930A5 JP2009516930A5 (enExample) 2009-12-17

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
JP2008542331A Pending JP2009516930A (ja) 2005-11-22 2006-11-07 半導体材料としてのナフタレン系テトラカルボン酸ジイミド

Country Status (6)

Country Link
US (1) US7422777B2 (enExample)
EP (1) EP1952453B1 (enExample)
JP (1) JP2009516930A (enExample)
KR (1) KR20080073303A (enExample)
TW (1) TWI416721B (enExample)
WO (1) WO2007061614A1 (enExample)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010534403A (ja) * 2007-06-29 2010-11-04 イーストマン コダック カンパニー 薄膜トランジスタのためのテトラカルボン酸ジイミド半導体
KR20110041791A (ko) * 2009-10-16 2011-04-22 삼성전자주식회사 그라핀 소자 및 그 제조 방법
JP2011514399A (ja) * 2008-02-05 2011-05-06 ビーエーエスエフ ソシエタス・ヨーロピア ナフタレン−イミド半導体ポリマー
JP2011514884A (ja) * 2008-02-05 2011-05-12 ビーエーエスエフ ソシエタス・ヨーロピア ペリレン半導体並びにその製造方法及び使用
WO2019176634A1 (ja) * 2018-03-16 2019-09-19 国立大学法人大阪大学 ｎ型有機半導体材料、有機半導体膜形成用組成物、有機半導体膜及びその製造方法、有機薄膜トランジスタ及びその製造方法、並びに化合物の製造方法

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JP4921982B2 (ja) * 2004-01-26 2012-04-25 ノースウエスタン ユニバーシティ ペリレンｎ型半導体及び関連装置
WO2007146250A2 (en) * 2006-06-12 2007-12-21 Northwestern University Naphthalene-based semiconductor materials and methods of preparing and use thereof
WO2008051552A2 (en) * 2006-10-25 2008-05-02 Northwestern University Organic semiconductor materials and methods of preparing and use thereof
WO2008063609A2 (en) 2006-11-17 2008-05-29 Polyera Corporation Diimide-based semiconductor materials and methods of preparing and using the same
WO2008063583A1 (en) * 2006-11-17 2008-05-29 Polyera Corporation Acene-based organic semiconductor materials and methods of preparing and using the same
US7804087B2 (en) * 2006-12-07 2010-09-28 Eastman Kodak Company Configurationally controlled N,N'-Dicycloalkyl-substituted naphthalene-based tetracarboxylic diimide compounds as N-type semiconductor materials for thin film transistors
EP2104676A2 (en) * 2007-01-08 2009-09-30 Polyera Corporation Methods for preparing arene-bis(dicarboximide)-based semiconducting materials and related intermediates for preparing same
US8022214B2 (en) * 2007-01-24 2011-09-20 Polyera Corporation Organic semiconductor materials and precursors thereof
WO2009089283A2 (en) * 2008-01-07 2009-07-16 The Johns Hopkins University Low-voltage, n-channel hybrid transistors
US7649199B2 (en) * 2008-04-11 2010-01-19 Eastman Kodak Company N-type semiconductor materials in thin film transistors and electronic devices
US8309394B2 (en) * 2010-01-22 2012-11-13 Eastman Kodak Company Method of making N-type semiconductor devices
US8212243B2 (en) * 2010-01-22 2012-07-03 Eastman Kodak Company Organic semiconducting compositions and N-type semiconductor devices
US8530270B2 (en) 2010-04-30 2013-09-10 Eastman Kodak Company Methods of preparing semiconductive compositions and devices
US8411489B2 (en) 2010-04-30 2013-04-02 Eastman Kodak Company Semiconducting devices and methods of preparing
US8314265B2 (en) 2010-04-30 2012-11-20 Eastman Kodak Company Aromatic amic acids or amic esters and compositions
US20110269966A1 (en) 2010-04-30 2011-11-03 Deepak Shukla Semiconducting articles
US8450726B2 (en) 2010-05-27 2013-05-28 Eastman Kodak Company Articles containing coatings of amic acid salts
US8404892B2 (en) 2010-05-27 2013-03-26 Eastman Kodak Company Aromatic amic acid salts and compositions
US8431433B2 (en) 2010-05-27 2013-04-30 Eastman Kodak Company Methods of providing semiconductor layers from amic acid salts
DE102011013897A1 (de) * 2011-03-11 2012-09-13 Technische Universität Dresden Organische Solarzelle
US8692238B2 (en) 2012-04-25 2014-04-08 Eastman Kodak Company Semiconductor devices and methods of preparation
US8779415B2 (en) 2012-11-08 2014-07-15 Eastman Kodak Company Devices containing organic polymeric multi-metallic composites
KR101490104B1 (ko) * 2013-06-12 2015-03-25 경상대학교산학협력단 나프탈렌 다이이미드 유도체 화합물 및 제조방법과 이를 포함하는 유기전자소자
WO2015191293A1 (en) 2014-06-11 2015-12-17 Eastman Kodak Company Devices having dielectric layers with thiosulfate-containing polymers
US12490574B2 (en) * 2021-02-08 2025-12-02 Uif (University Industry Foundation), Yonsei University Skin-conformable biosignal monitoring sensor by applying organic-inorganic hybrid photo transistor and manufacturing method thereof

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JP2001040237A (ja) * 1999-07-28 2001-02-13 Kyocera Mita Corp フタロシアニン結晶及びその製造方法と、これを含有した電子写真感光体
JP2004014982A (ja) * 2002-06-11 2004-01-15 Konica Minolta Holdings Inc 半導体回路および画像表示装置
JP2005029559A (ja) * 2003-07-04 2005-02-03 Samsung Electronics Co Ltd ナフタレンテトラカルボン酸ジイミド誘導体及びこれを含む電子写真感光体
JP2005208617A (ja) * 2003-12-26 2005-08-04 Canon Inc 電子写真感光体、電子写真感光体の製造方法、プロセスカートリッジおよび電子写真装置
JP2005286329A (ja) * 2004-03-24 2005-10-13 Samsung Sdi Co Ltd 有機電界効果トランジスタ、それを具備する平板ディスプレイ装置、及び有機電界効果トランジスタの製造方法

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JP4921982B2 (ja) 2004-01-26 2012-04-25 ノースウエスタン ユニバーシティ ペリレンｎ型半導体及び関連装置
US7579619B2 (en) * 2005-04-20 2009-08-25 Eastman Kodak Company N,N′-di(arylalkyl)-substituted naphthalene-based tetracarboxylic diimide compounds as n-type semiconductor materials for thin film transistors
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Patent Citations (5)

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Publication number Priority date Publication date Assignee Title
JP2001040237A (ja) * 1999-07-28 2001-02-13 Kyocera Mita Corp フタロシアニン結晶及びその製造方法と、これを含有した電子写真感光体
JP2004014982A (ja) * 2002-06-11 2004-01-15 Konica Minolta Holdings Inc 半導体回路および画像表示装置
JP2005029559A (ja) * 2003-07-04 2005-02-03 Samsung Electronics Co Ltd ナフタレンテトラカルボン酸ジイミド誘導体及びこれを含む電子写真感光体
JP2005208617A (ja) * 2003-12-26 2005-08-04 Canon Inc 電子写真感光体、電子写真感光体の製造方法、プロセスカートリッジおよび電子写真装置
JP2005286329A (ja) * 2004-03-24 2005-10-13 Samsung Sdi Co Ltd 有機電界効果トランジスタ、それを具備する平板ディスプレイ装置、及び有機電界効果トランジスタの製造方法

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010534403A (ja) * 2007-06-29 2010-11-04 イーストマン コダック カンパニー 薄膜トランジスタのためのテトラカルボン酸ジイミド半導体
JP2011514399A (ja) * 2008-02-05 2011-05-06 ビーエーエスエフ ソシエタス・ヨーロピア ナフタレン−イミド半導体ポリマー
JP2011514884A (ja) * 2008-02-05 2011-05-12 ビーエーエスエフ ソシエタス・ヨーロピア ペリレン半導体並びにその製造方法及び使用
KR20110041791A (ko) * 2009-10-16 2011-04-22 삼성전자주식회사 그라핀 소자 및 그 제조 방법
KR101694877B1 (ko) 2009-10-16 2017-01-11 삼성전자주식회사 그라핀 소자 및 그 제조 방법
WO2019176634A1 (ja) * 2018-03-16 2019-09-19 国立大学法人大阪大学 ｎ型有機半導体材料、有機半導体膜形成用組成物、有機半導体膜及びその製造方法、有機薄膜トランジスタ及びその製造方法、並びに化合物の製造方法

Also Published As

Publication number Publication date
KR20080073303A (ko) 2008-08-08
EP1952453B1 (en) 2016-07-27
WO2007061614A1 (en) 2007-05-31
TW200733378A (en) 2007-09-01
US7422777B2 (en) 2008-09-09
US20070116895A1 (en) 2007-05-24
TWI416721B (zh) 2013-11-21
EP1952453A1 (en) 2008-08-06

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