JP2010509789A5 - - Google Patents
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- Publication number
- JP2010509789A5 JP2010509789A5 JP2009540234A JP2009540234A JP2010509789A5 JP 2010509789 A5 JP2010509789 A5 JP 2010509789A5 JP 2009540234 A JP2009540234 A JP 2009540234A JP 2009540234 A JP2009540234 A JP 2009540234A JP 2010509789 A5 JP2010509789 A5 JP 2010509789A5
- Authority
- JP
- Japan
- Prior art keywords
- substituted
- substituent
- thin film
- organic
- semiconductor material
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 claims 13
- 229910052757 nitrogen Inorganic materials 0.000 claims 12
- 239000010409 thin film Substances 0.000 claims 11
- 125000001424 substituent group Chemical group 0.000 claims 9
- 239000000463 material Substances 0.000 claims 8
- -1 4-substituted cyclohexyl ring Chemical group 0.000 claims 6
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims 5
- 125000002723 alicyclic group Chemical group 0.000 claims 4
- 239000010408 film Substances 0.000 claims 3
- 150000001875 compounds Chemical class 0.000 claims 2
- 125000000113 cyclohexyl group Chemical group [H]C1([H])C([H])([H])C([H])([H])C([H])(*)C([H])([H])C1([H])[H] 0.000 claims 2
- 230000005669 field effect Effects 0.000 claims 2
- 238000004519 manufacturing process Methods 0.000 claims 2
- 150000002790 naphthalenes Chemical class 0.000 claims 2
- 238000000151 deposition Methods 0.000 claims 1
- 150000003949 imides Chemical class 0.000 claims 1
- 150000002466 imines Chemical class 0.000 claims 1
- 125000001905 inorganic group Chemical group 0.000 claims 1
- 239000011159 matrix material Substances 0.000 claims 1
- 238000000034 method Methods 0.000 claims 1
- UFWIBTONFRDIAS-UHFFFAOYSA-N naphthalene-acid Natural products C1=CC=CC2=CC=CC=C21 UFWIBTONFRDIAS-UHFFFAOYSA-N 0.000 claims 1
- 125000000962 organic group Chemical group 0.000 claims 1
- 239000000758 substrate Substances 0.000 claims 1
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US11/567,954 | 2006-12-07 | ||
| US11/567,954 US7804087B2 (en) | 2006-12-07 | 2006-12-07 | Configurationally controlled N,N'-Dicycloalkyl-substituted naphthalene-based tetracarboxylic diimide compounds as N-type semiconductor materials for thin film transistors |
| PCT/US2007/024342 WO2008057610A2 (en) | 2006-12-07 | 2007-11-21 | Naphthalene-based tetracarboxylic diimide compounds as semiconductor materials |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2010509789A JP2010509789A (ja) | 2010-03-25 |
| JP2010509789A5 true JP2010509789A5 (enExample) | 2010-11-11 |
| JP5336385B2 JP5336385B2 (ja) | 2013-11-06 |
Family
ID=39183038
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2009540234A Expired - Fee Related JP5336385B2 (ja) | 2006-12-07 | 2007-11-21 | 半導体材料としてのナフタレン系テトラカルボン酸ジイミド化合物 |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US7804087B2 (enExample) |
| EP (1) | EP2089919B1 (enExample) |
| JP (1) | JP5336385B2 (enExample) |
| AT (1) | ATE518260T1 (enExample) |
| WO (1) | WO2008057610A2 (enExample) |
Families Citing this family (22)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4921982B2 (ja) * | 2004-01-26 | 2012-04-25 | ノースウエスタン ユニバーシティ | ペリレンｎ型半導体及び関連装置 |
| WO2007146250A2 (en) * | 2006-06-12 | 2007-12-21 | Northwestern University | Naphthalene-based semiconductor materials and methods of preparing and use thereof |
| WO2008051552A2 (en) * | 2006-10-25 | 2008-05-02 | Northwestern University | Organic semiconductor materials and methods of preparing and use thereof |
| WO2008063609A2 (en) | 2006-11-17 | 2008-05-29 | Polyera Corporation | Diimide-based semiconductor materials and methods of preparing and using the same |
| EP2104676A2 (en) * | 2007-01-08 | 2009-09-30 | Polyera Corporation | Methods for preparing arene-bis(dicarboximide)-based semiconducting materials and related intermediates for preparing same |
| US8022214B2 (en) * | 2007-01-24 | 2011-09-20 | Polyera Corporation | Organic semiconductor materials and precursors thereof |
| US7649199B2 (en) | 2008-04-11 | 2010-01-19 | Eastman Kodak Company | N-type semiconductor materials in thin film transistors and electronic devices |
| JP5320921B2 (ja) | 2008-09-16 | 2013-10-23 | 株式会社リコー | 画像形成装置、画像形成方法、画像形成プログラム |
| US8212243B2 (en) * | 2010-01-22 | 2012-07-03 | Eastman Kodak Company | Organic semiconducting compositions and N-type semiconductor devices |
| US8309394B2 (en) * | 2010-01-22 | 2012-11-13 | Eastman Kodak Company | Method of making N-type semiconductor devices |
| TWI422573B (zh) * | 2010-02-11 | 2014-01-11 | Nat Univ Tsing Hua | 有機薄膜電晶體暨其製備方法 |
| US20110269966A1 (en) | 2010-04-30 | 2011-11-03 | Deepak Shukla | Semiconducting articles |
| US8530270B2 (en) | 2010-04-30 | 2013-09-10 | Eastman Kodak Company | Methods of preparing semiconductive compositions and devices |
| US8411489B2 (en) | 2010-04-30 | 2013-04-02 | Eastman Kodak Company | Semiconducting devices and methods of preparing |
| US8314265B2 (en) | 2010-04-30 | 2012-11-20 | Eastman Kodak Company | Aromatic amic acids or amic esters and compositions |
| US8404892B2 (en) | 2010-05-27 | 2013-03-26 | Eastman Kodak Company | Aromatic amic acid salts and compositions |
| US8450726B2 (en) | 2010-05-27 | 2013-05-28 | Eastman Kodak Company | Articles containing coatings of amic acid salts |
| US8431433B2 (en) | 2010-05-27 | 2013-04-30 | Eastman Kodak Company | Methods of providing semiconductor layers from amic acid salts |
| DE102010061963A1 (de) * | 2010-11-25 | 2012-05-31 | Bayer Materialscience Aktiengesellschaft | EL-Elemente enthaltend eine Pigmentschicht mit vernetzenden Systemen mit blockierten Isocyanat-Gruppen |
| US8692238B2 (en) | 2012-04-25 | 2014-04-08 | Eastman Kodak Company | Semiconductor devices and methods of preparation |
| US8779415B2 (en) | 2012-11-08 | 2014-07-15 | Eastman Kodak Company | Devices containing organic polymeric multi-metallic composites |
| WO2015191293A1 (en) | 2014-06-11 | 2015-12-17 | Eastman Kodak Company | Devices having dielectric layers with thiosulfate-containing polymers |
Family Cites Families (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US2087133A (en) * | 1933-04-15 | 1937-07-13 | Gen Aniline Works Inc | Dyestuffs of the naphthalene-1.4.5.8-tetracarboxylic acid dhmide series |
| DE2951349A1 (de) | 1979-12-20 | 1981-07-02 | Bayer Ag, 5090 Leverkusen | Naphthalintetracarbonsaeurediimide als elektrische halbleiter und photoleiter |
| JPH0527457A (ja) * | 1991-07-19 | 1993-02-05 | Kao Corp | 電子写真感光体 |
| US5468583A (en) * | 1994-12-28 | 1995-11-21 | Eastman Kodak Company | Cyclic bis-dicarboximide electron transport compounds for electrophotography |
| US6387727B1 (en) * | 1999-03-29 | 2002-05-14 | Agere Systems Guardian Corp. | Device comprising n-channel semiconductor material |
| US6794102B2 (en) * | 2002-07-17 | 2004-09-21 | Xerox Corporation | Naphthalene tetracarboxylic diimide dimers |
| EP1434282A3 (en) * | 2002-12-26 | 2007-06-27 | Konica Minolta Holdings, Inc. | Protective layer for an organic thin-film transistor |
| US6861664B2 (en) * | 2003-07-25 | 2005-03-01 | Xerox Corporation | Device with n-type semiconductor |
| JP4723812B2 (ja) * | 2004-01-22 | 2011-07-13 | 三井化学株式会社 | ナフタレンカルボン酸誘導体を用いた有機薄膜トランジスタ |
| JP4921982B2 (ja) * | 2004-01-26 | 2012-04-25 | ノースウエスタン ユニバーシティ | ペリレンｎ型半導体及び関連装置 |
| US7422777B2 (en) * | 2005-11-22 | 2008-09-09 | Eastman Kodak Company | N,N′-dicycloalkyl-substituted naphthalene-based tetracarboxylic diimide compounds as n-type semiconductor materials for thin film transistors |
-
2006
- 2006-12-07 US US11/567,954 patent/US7804087B2/en not_active Expired - Fee Related
-
2007
- 2007-11-21 JP JP2009540234A patent/JP5336385B2/ja not_active Expired - Fee Related
- 2007-11-21 AT AT07862202T patent/ATE518260T1/de not_active IP Right Cessation
- 2007-11-21 EP EP07862202A patent/EP2089919B1/en not_active Not-in-force
- 2007-11-21 WO PCT/US2007/024342 patent/WO2008057610A2/en not_active Ceased
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