JP2010135793A5 - - Google Patents

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Publication number
JP2010135793A5
JP2010135793A5 JP2009274818A JP2009274818A JP2010135793A5 JP 2010135793 A5 JP2010135793 A5 JP 2010135793A5 JP 2009274818 A JP2009274818 A JP 2009274818A JP 2009274818 A JP2009274818 A JP 2009274818A JP 2010135793 A5 JP2010135793 A5 JP 2010135793A5
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JP
Japan
Prior art keywords
dielectric
dielectric polymer
low
thin film
film transistor
Prior art date
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Application number
JP2009274818A
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English (en)
Japanese (ja)
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JP2010135793A (ja
JP5599181B2 (ja
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Publication date
Priority claimed from US12/328,849 external-priority patent/US8154080B2/en
Application filed filed Critical
Publication of JP2010135793A publication Critical patent/JP2010135793A/ja
Publication of JP2010135793A5 publication Critical patent/JP2010135793A5/ja
Application granted granted Critical
Publication of JP5599181B2 publication Critical patent/JP5599181B2/ja
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

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JP2009274818A 2008-12-05 2009-12-02 薄膜トランジスタ Expired - Fee Related JP5599181B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US12/328,849 2008-12-05
US12/328,849 US8154080B2 (en) 2008-12-05 2008-12-05 Dielectric structure having lower-k and higher-k materials

Publications (3)

Publication Number Publication Date
JP2010135793A JP2010135793A (ja) 2010-06-17
JP2010135793A5 true JP2010135793A5 (enExample) 2013-01-24
JP5599181B2 JP5599181B2 (ja) 2014-10-01

Family

ID=42230123

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2009274818A Expired - Fee Related JP5599181B2 (ja) 2008-12-05 2009-12-02 薄膜トランジスタ

Country Status (2)

Country Link
US (1) US8154080B2 (enExample)
JP (1) JP5599181B2 (enExample)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2011129209A1 (en) * 2010-04-16 2011-10-20 Semiconductor Energy Laboratory Co., Ltd. Power source circuit
US8821962B2 (en) * 2010-12-01 2014-09-02 Xerox Corporation Method of forming dielectric layer with a dielectric composition
US8623447B2 (en) * 2010-12-01 2014-01-07 Xerox Corporation Method for coating dielectric composition for fabricating thin-film transistors
JPWO2014189114A1 (ja) * 2013-05-23 2017-02-23 富士フイルム株式会社 有機半導体組成物および有機薄膜トランジスタならびに電子ペーパーおよびディスプレイデバイス
JP6460592B2 (ja) 2013-07-31 2019-01-30 株式会社半導体エネルギー研究所 Ｄｃｄｃコンバータ、及び半導体装置
JP6525994B2 (ja) * 2013-09-30 2019-06-05 エルジー ディスプレイ カンパニー リミテッド 有機電子素子用基板
CA3241608A1 (en) * 2021-12-20 2023-06-29 Benoit Hugo Lessard Polymer capacitive sensors and methods of uses thereof

Family Cites Families (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2885311B2 (ja) 1994-11-01 1999-04-19 工業技術院長 ポリマーの相分離を利用した表面加工法
US6465532B1 (en) * 1997-03-05 2002-10-15 Csp Tecnologies, Inc. Co-continuous interconnecting channel morphology polymer having controlled gas transmission rate through the polymer
US5883219A (en) 1997-05-29 1999-03-16 International Business Machines Corporation Integrated circuit device and process for its manufacture
US6528218B1 (en) 1998-12-15 2003-03-04 International Business Machines Corporation Method of fabricating circuitized structures
GB9928353D0 (en) * 1999-12-01 2000-01-26 Koninkl Philips Electronics Nv Liquid crystal display and method of manufacture
GB0130485D0 (en) 2001-12-21 2002-02-06 Plastic Logic Ltd Self-aligned printing
JP4014431B2 (ja) 2002-03-27 2007-11-28 富士通株式会社 半導体記憶装置及び半導体記憶装置の製造方法
US6528409B1 (en) 2002-04-29 2003-03-04 Advanced Micro Devices, Inc. Interconnect structure formed in porous dielectric material with minimized degradation and electromigration
JP2004241528A (ja) 2003-02-05 2004-08-26 Ricoh Co Ltd 有機半導体装置及びそれを有する表示素子
US7098525B2 (en) 2003-05-08 2006-08-29 3M Innovative Properties Company Organic polymers, electronic devices, and methods
JP2005072569A (ja) * 2003-08-06 2005-03-17 Mitsubishi Chemicals Corp 有機電界効果トランジスタ
JP2005277223A (ja) * 2004-03-25 2005-10-06 National Institute Of Advanced Industrial & Technology 半導体装置およびその製造方法
US20060214154A1 (en) * 2005-03-24 2006-09-28 Eastman Kodak Company Polymeric gate dielectrics for organic thin film transistors and methods of making the same
US7528448B2 (en) * 2006-07-17 2009-05-05 E.I. Du Pont De Nemours And Company Thin film transistor comprising novel conductor and dielectric compositions
US7795614B2 (en) * 2007-04-02 2010-09-14 Xerox Corporation Device with phase-separated dielectric structure
US7754510B2 (en) * 2007-04-02 2010-07-13 Xerox Corporation Phase-separated dielectric structure fabrication process
JP2011508967A (ja) * 2007-12-17 2011-03-17 スリーエム イノベイティブ プロパティズ カンパニー アントラセンを主成分とする溶液加工性有機半導体
US20100067172A1 (en) * 2008-03-13 2010-03-18 Strategic Polymer Sciences, Inc. High electric energy density polymeric compositions, methods of the manufacture therefor, and articles comprising the same
US7855097B2 (en) * 2008-07-11 2010-12-21 Organicid, Inc. Method of increasing yield in OFETs by using a high-K dielectric layer in a dual dielectric layer

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