JP5599181B2 - 薄膜トランジスタ - Google Patents

薄膜トランジスタ Download PDF

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Publication number
JP5599181B2
JP5599181B2 JP2009274818A JP2009274818A JP5599181B2 JP 5599181 B2 JP5599181 B2 JP 5599181B2 JP 2009274818 A JP2009274818 A JP 2009274818A JP 2009274818 A JP2009274818 A JP 2009274818A JP 5599181 B2 JP5599181 B2 JP 5599181B2
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JP
Japan
Prior art keywords
dielectric
phase
dielectric material
low
layer
Prior art date
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Expired - Fee Related
Application number
JP2009274818A
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English (en)
Japanese (ja)
Other versions
JP2010135793A (ja
JP2010135793A5 (enExample
Inventor
ウー イーリアン
エフ スミス ポール
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Xerox Corp
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Xerox Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Publication date
Application filed by Xerox Corp filed Critical Xerox Corp
Publication of JP2010135793A publication Critical patent/JP2010135793A/ja
Publication of JP2010135793A5 publication Critical patent/JP2010135793A5/ja
Application granted granted Critical
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Expired - Fee Related legal-status Critical Current
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462—Insulated gate field-effect transistors [IGFETs]
    • H10K10/468—Insulated gate field-effect transistors [IGFETs] characterised by the gate dielectrics
    • H10K10/471—Insulated gate field-effect transistors [IGFETs] characterised by the gate dielectrics the gate dielectric comprising only organic materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462—Insulated gate field-effect transistors [IGFETs]
    • H10K10/468—Insulated gate field-effect transistors [IGFETs] characterised by the gate dielectrics
    • H10K10/478—Insulated gate field-effect transistors [IGFETs] characterised by the gate dielectrics the gate dielectric comprising a layer of composite material comprising interpenetrating or embedded materials, e.g. TiO2 particles in a polymer matrix
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462—Insulated gate field-effect transistors [IGFETs]
    • H10K10/464—Lateral top-gate IGFETs comprising only a single gate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462—Insulated gate field-effect transistors [IGFETs]
    • H10K10/466—Lateral bottom-gate IGFETs comprising only a single gate
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/31504—Composite [nonstructural laminate]
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/31504—Composite [nonstructural laminate]
    • Y10T428/31652—Of asbestos
    • Y10T428/31663—As siloxane, silicone or silane
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/31504—Composite [nonstructural laminate]
    • Y10T428/31855—Of addition polymer from unsaturated monomers
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/31504—Composite [nonstructural laminate]
    • Y10T428/31855—Of addition polymer from unsaturated monomers
    • Y10T428/31931—Polyene monomer-containing

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Composite Materials (AREA)
  • Materials Engineering (AREA)
  • Thin Film Transistor (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Formation Of Insulating Films (AREA)
  • Electroluminescent Light Sources (AREA)
JP2009274818A 2008-12-05 2009-12-02 薄膜トランジスタ Expired - Fee Related JP5599181B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US12/328,849 US8154080B2 (en) 2008-12-05 2008-12-05 Dielectric structure having lower-k and higher-k materials
US12/328,849 2008-12-05

Publications (3)

Publication Number Publication Date
JP2010135793A JP2010135793A (ja) 2010-06-17
JP2010135793A5 JP2010135793A5 (enExample) 2013-01-24
JP5599181B2 true JP5599181B2 (ja) 2014-10-01

Family

ID=42230123

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2009274818A Expired - Fee Related JP5599181B2 (ja) 2008-12-05 2009-12-02 薄膜トランジスタ

Country Status (2)

Country Link
US (1) US8154080B2 (enExample)
JP (1) JP5599181B2 (enExample)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20130061678A (ko) * 2010-04-16 2013-06-11 가부시키가이샤 한도오따이 에네루기 켄큐쇼 전원 회로
US8623447B2 (en) * 2010-12-01 2014-01-07 Xerox Corporation Method for coating dielectric composition for fabricating thin-film transistors
US8821962B2 (en) * 2010-12-01 2014-09-02 Xerox Corporation Method of forming dielectric layer with a dielectric composition
CN105229814B (zh) * 2013-05-23 2017-11-10 富士胶片株式会社 有机半导体组合物、有机薄膜晶体管、以及电子纸及显示装置
JP6460592B2 (ja) 2013-07-31 2019-01-30 株式会社半導体エネルギー研究所 Ｄｃｄｃコンバータ、及び半導体装置
TWI581969B (zh) 2013-09-30 2017-05-11 樂金顯示科技股份有限公司 用於有機電子裝置之基板
CA3241608A1 (en) * 2021-12-20 2023-06-29 Benoit Hugo Lessard Polymer capacitive sensors and methods of uses thereof

Family Cites Families (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2885311B2 (ja) 1994-11-01 1999-04-19 工業技術院長 ポリマーの相分離を利用した表面加工法
US6465532B1 (en) * 1997-03-05 2002-10-15 Csp Tecnologies, Inc. Co-continuous interconnecting channel morphology polymer having controlled gas transmission rate through the polymer
US5883219A (en) * 1997-05-29 1999-03-16 International Business Machines Corporation Integrated circuit device and process for its manufacture
US6528218B1 (en) * 1998-12-15 2003-03-04 International Business Machines Corporation Method of fabricating circuitized structures
GB9928353D0 (en) * 1999-12-01 2000-01-26 Koninkl Philips Electronics Nv Liquid crystal display and method of manufacture
GB0130485D0 (en) 2001-12-21 2002-02-06 Plastic Logic Ltd Self-aligned printing
JP4014431B2 (ja) * 2002-03-27 2007-11-28 富士通株式会社 半導体記憶装置及び半導体記憶装置の製造方法
US6528409B1 (en) * 2002-04-29 2003-03-04 Advanced Micro Devices, Inc. Interconnect structure formed in porous dielectric material with minimized degradation and electromigration
JP2004241528A (ja) 2003-02-05 2004-08-26 Ricoh Co Ltd 有機半導体装置及びそれを有する表示素子
US7098525B2 (en) * 2003-05-08 2006-08-29 3M Innovative Properties Company Organic polymers, electronic devices, and methods
JP2005072569A (ja) * 2003-08-06 2005-03-17 Mitsubishi Chemicals Corp 有機電界効果トランジスタ
JP2005277223A (ja) * 2004-03-25 2005-10-06 National Institute Of Advanced Industrial & Technology 半導体装置およびその製造方法
US20060214154A1 (en) * 2005-03-24 2006-09-28 Eastman Kodak Company Polymeric gate dielectrics for organic thin film transistors and methods of making the same
US7528448B2 (en) * 2006-07-17 2009-05-05 E.I. Du Pont De Nemours And Company Thin film transistor comprising novel conductor and dielectric compositions
US7795614B2 (en) * 2007-04-02 2010-09-14 Xerox Corporation Device with phase-separated dielectric structure
US7754510B2 (en) * 2007-04-02 2010-07-13 Xerox Corporation Phase-separated dielectric structure fabrication process
JP2011508967A (ja) * 2007-12-17 2011-03-17 スリーエム イノベイティブ プロパティズ カンパニー アントラセンを主成分とする溶液加工性有機半導体
US20100067172A1 (en) * 2008-03-13 2010-03-18 Strategic Polymer Sciences, Inc. High electric energy density polymeric compositions, methods of the manufacture therefor, and articles comprising the same
US7855097B2 (en) * 2008-07-11 2010-12-21 Organicid, Inc. Method of increasing yield in OFETs by using a high-K dielectric layer in a dual dielectric layer

Also Published As

Publication number Publication date
US8154080B2 (en) 2012-04-10
JP2010135793A (ja) 2010-06-17
US20100140705A1 (en) 2010-06-10

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