JP5336385B2 - 半導体材料としてのナフタレン系テトラカルボン酸ジイミド化合物 - Google Patents

半導体材料としてのナフタレン系テトラカルボン酸ジイミド化合物 Download PDF

Info

Publication number
JP5336385B2
JP5336385B2 JP2009540234A JP2009540234A JP5336385B2 JP 5336385 B2 JP5336385 B2 JP 5336385B2 JP 2009540234 A JP2009540234 A JP 2009540234A JP 2009540234 A JP2009540234 A JP 2009540234A JP 5336385 B2 JP5336385 B2 JP 5336385B2
Authority
JP
Japan
Prior art keywords
substituted
substituent
thin film
organic
group
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2009540234A
Other languages
English (en)
Japanese (ja)
Other versions
JP2010509789A5 (enExample
JP2010509789A (ja
Inventor
シュクラ，ディーパク
ロバート ウェルター，トーマス
トッド キャリー，ジェフリー
ラジェスワラン，マンジュ
ジー． エイハーン，ウェンディ
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Eastman Kodak Co
Original Assignee
Eastman Kodak Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Eastman Kodak Co filed Critical Eastman Kodak Co
Publication of JP2010509789A publication Critical patent/JP2010509789A/ja
Publication of JP2010509789A5 publication Critical patent/JP2010509789A5/ja
Application granted granted Critical
Publication of JP5336385B2 publication Critical patent/JP5336385B2/ja
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09B—ORGANIC DYES OR CLOSELY-RELATED COMPOUNDS FOR PRODUCING DYES, e.g. PIGMENTS; MORDANTS; LAKES
    • C09B5/00—Dyes with an anthracene nucleus condensed with one or more heterocyclic rings with or without carbocyclic rings
    • C09B5/62—Cyclic imides or amidines of peri-dicarboxylic acids of the anthracene, benzanthrene, or perylene series
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/60—Organic compounds having low molecular weight
    • H10K85/615—Polycyclic condensed aromatic hydrocarbons, e.g. anthracene
    • H10K85/621—Aromatic anhydride or imide compounds, e.g. perylene tetra-carboxylic dianhydride or perylene tetracarboxylic di-imide
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462—Insulated gate field-effect transistors [IGFETs]
    • H10K10/464—Lateral top-gate IGFETs comprising only a single gate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462—Insulated gate field-effect transistors [IGFETs]
    • H10K10/466—Lateral bottom-gate IGFETs comprising only a single gate
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/549—Organic PV cells

Landscapes

  • Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Thin Film Transistor (AREA)
  • Nitrogen Condensed Heterocyclic Rings (AREA)
  • Nitrogen And Oxygen Or Sulfur-Condensed Heterocyclic Ring Systems (AREA)
JP2009540234A 2006-12-07 2007-11-21 半導体材料としてのナフタレン系テトラカルボン酸ジイミド化合物 Expired - Fee Related JP5336385B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US11/567,954 2006-12-07
US11/567,954 US7804087B2 (en) 2006-12-07 2006-12-07 Configurationally controlled N,N'-Dicycloalkyl-substituted naphthalene-based tetracarboxylic diimide compounds as N-type semiconductor materials for thin film transistors
PCT/US2007/024342 WO2008057610A2 (en) 2006-12-07 2007-11-21 Naphthalene-based tetracarboxylic diimide compounds as semiconductor materials

Publications (3)

Publication Number Publication Date
JP2010509789A JP2010509789A (ja) 2010-03-25
JP2010509789A5 JP2010509789A5 (enExample) 2010-11-11
JP5336385B2 true JP5336385B2 (ja) 2013-11-06

Family

ID=39183038

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2009540234A Expired - Fee Related JP5336385B2 (ja) 2006-12-07 2007-11-21 半導体材料としてのナフタレン系テトラカルボン酸ジイミド化合物

Country Status (5)

Country Link
US (1) US7804087B2 (enExample)
EP (1) EP2089919B1 (enExample)
JP (1) JP5336385B2 (enExample)
AT (1) ATE518260T1 (enExample)
WO (1) WO2008057610A2 (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8743392B2 (en) 2008-09-16 2014-06-03 Ricoh Company, Ltd. Apparatus, method, and computer program product for forming images

Families Citing this family (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7671202B2 (en) * 2004-01-26 2010-03-02 Northwestern University Perylene n-type semiconductors and related devices
US7569693B2 (en) * 2006-06-12 2009-08-04 Northwestern University Naphthalene-based semiconductor materials and methods of preparing and use thereof
EP2089398A2 (en) * 2006-10-25 2009-08-19 Polyera Corporation Organic semiconductor materials and methods of preparing and use thereof
JP5380296B2 (ja) 2006-11-17 2014-01-08 ポリエラ コーポレイション ジイミド系半導体材料ならびにジイミド系半導体材料を調製および使用する方法
JP2010515684A (ja) * 2007-01-08 2010-05-13 ポリエラ コーポレイション アレーン−ビス（ジカルボキシイミド）系半導体材料、およびそれを調製するための関連する中間体を調製する方法
US8022214B2 (en) * 2007-01-24 2011-09-20 Polyera Corporation Organic semiconductor materials and precursors thereof
US7649199B2 (en) 2008-04-11 2010-01-19 Eastman Kodak Company N-type semiconductor materials in thin film transistors and electronic devices
US8309394B2 (en) * 2010-01-22 2012-11-13 Eastman Kodak Company Method of making N-type semiconductor devices
US8212243B2 (en) 2010-01-22 2012-07-03 Eastman Kodak Company Organic semiconducting compositions and N-type semiconductor devices
TWI422573B (zh) * 2010-02-11 2014-01-11 Nat Univ Tsing Hua 有機薄膜電晶體暨其製備方法
US20110269966A1 (en) 2010-04-30 2011-11-03 Deepak Shukla Semiconducting articles
US8530270B2 (en) 2010-04-30 2013-09-10 Eastman Kodak Company Methods of preparing semiconductive compositions and devices
US8411489B2 (en) 2010-04-30 2013-04-02 Eastman Kodak Company Semiconducting devices and methods of preparing
US8314265B2 (en) 2010-04-30 2012-11-20 Eastman Kodak Company Aromatic amic acids or amic esters and compositions
US8431433B2 (en) 2010-05-27 2013-04-30 Eastman Kodak Company Methods of providing semiconductor layers from amic acid salts
US8450726B2 (en) 2010-05-27 2013-05-28 Eastman Kodak Company Articles containing coatings of amic acid salts
US8404892B2 (en) 2010-05-27 2013-03-26 Eastman Kodak Company Aromatic amic acid salts and compositions
DE102010061963A1 (de) * 2010-11-25 2012-05-31 Bayer Materialscience Aktiengesellschaft EL-Elemente enthaltend eine Pigmentschicht mit vernetzenden Systemen mit blockierten Isocyanat-Gruppen
US8692238B2 (en) 2012-04-25 2014-04-08 Eastman Kodak Company Semiconductor devices and methods of preparation
US8779415B2 (en) 2012-11-08 2014-07-15 Eastman Kodak Company Devices containing organic polymeric multi-metallic composites
WO2015191293A1 (en) 2014-06-11 2015-12-17 Eastman Kodak Company Devices having dielectric layers with thiosulfate-containing polymers

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2087133A (en) * 1933-04-15 1937-07-13 Gen Aniline Works Inc Dyestuffs of the naphthalene-1.4.5.8-tetracarboxylic acid dhmide series
DE2951349A1 (de) 1979-12-20 1981-07-02 Bayer Ag, 5090 Leverkusen Naphthalintetracarbonsaeurediimide als elektrische halbleiter und photoleiter
JPH0527457A (ja) * 1991-07-19 1993-02-05 Kao Corp 電子写真感光体
US5468583A (en) 1994-12-28 1995-11-21 Eastman Kodak Company Cyclic bis-dicarboximide electron transport compounds for electrophotography
US6387727B1 (en) 1999-03-29 2002-05-14 Agere Systems Guardian Corp. Device comprising n-channel semiconductor material
US6794102B2 (en) * 2002-07-17 2004-09-21 Xerox Corporation Naphthalene tetracarboxylic diimide dimers
EP1434282A3 (en) 2002-12-26 2007-06-27 Konica Minolta Holdings, Inc. Protective layer for an organic thin-film transistor
US6861664B2 (en) * 2003-07-25 2005-03-01 Xerox Corporation Device with n-type semiconductor
JP4723812B2 (ja) * 2004-01-22 2011-07-13 三井化学株式会社 ナフタレンカルボン酸誘導体を用いた有機薄膜トランジスタ
US7671202B2 (en) 2004-01-26 2010-03-02 Northwestern University Perylene n-type semiconductors and related devices
US7422777B2 (en) * 2005-11-22 2008-09-09 Eastman Kodak Company N,N′-dicycloalkyl-substituted naphthalene-based tetracarboxylic diimide compounds as n-type semiconductor materials for thin film transistors

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8743392B2 (en) 2008-09-16 2014-06-03 Ricoh Company, Ltd. Apparatus, method, and computer program product for forming images

Also Published As

Publication number Publication date
EP2089919A2 (en) 2009-08-19
ATE518260T1 (de) 2011-08-15
EP2089919B1 (en) 2011-07-27
WO2008057610A8 (en) 2009-07-23
US20080135833A1 (en) 2008-06-12
US7804087B2 (en) 2010-09-28
WO2008057610A2 (en) 2008-05-15
JP2010509789A (ja) 2010-03-25
WO2008057610A3 (en) 2008-07-24

Similar Documents

Publication Publication Date Title
JP5336385B2 (ja) 半導体材料としてのナフタレン系テトラカルボン酸ジイミド化合物
TWI416721B (zh) 作為ｎ型半導體材料之經ｎ，ｎ’-二環烷基取代之以萘為主的四羧酸二醯亞胺
US7981719B2 (en) N,N′-di(arylalkyl)-substituted naphthalene-based tetracarboxylic diimide compounds as n-type semiconductor materials for thin film transistors
US7807994B2 (en) N-type semiconductor materials for thin film transistors
JP5485981B2 (ja) 薄膜トランジスタにおけるｎ型半導体材料
US7326956B2 (en) Fluorine-containing N,N′-diaryl perylene-based tetracarboxylic diimide compounds as N-type semiconductor materials for thin film transistors
US7198977B2 (en) N,N′-di(phenylalky)-substituted perylene-based tetracarboxylic diimide compounds as n-type semiconductor materials for thin film transistors
CN101849300B (zh) 用于薄膜晶体管的四羧酸二酰亚胺半导体

Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20100908

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20100908

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20111109

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20121127

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20130227

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20130702

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20130801

R150 Certificate of patent or registration of utility model

Free format text: JAPANESE INTERMEDIATE CODE: R150

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

LAPS Cancellation because of no payment of annual fees