JP2008524846A - 薄膜トランジスタのためのｎ型半導体材料 - Google Patents

薄膜トランジスタのためのｎ型半導体材料 Download PDF

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Publication number
JP2008524846A
JP2008524846A JP2007546723A JP2007546723A JP2008524846A JP 2008524846 A JP2008524846 A JP 2008524846A JP 2007546723 A JP2007546723 A JP 2007546723A JP 2007546723 A JP2007546723 A JP 2007546723A JP 2008524846 A JP2008524846 A JP 2008524846A
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thin film
fluorine
article
semiconductor material
organic semiconductor
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Japanese (ja)
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JP2008524846A5 (enExample
Inventor
シャクラ，ディーパック
キャロル フリーマン，ダイアン
フォレスター ネルソン，シェルビー
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イーストマン コダック カンパニー
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Publication of JP2008524846A publication Critical patent/JP2008524846A/ja
Publication of JP2008524846A5 publication Critical patent/JP2008524846A5/ja
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    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09B—ORGANIC DYES OR CLOSELY-RELATED COMPOUNDS FOR PRODUCING DYES, e.g. PIGMENTS; MORDANTS; LAKES
    • C09B5/00—Dyes with an anthracene nucleus condensed with one or more heterocyclic rings with or without carbocyclic rings
    • C09B5/62—Cyclic imides or amidines of peri-dicarboxylic acids of the anthracene, benzanthrene, or perylene series
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462—Insulated gate field-effect transistors [IGFETs]
    • H10K10/464—Lateral top-gate IGFETs comprising only a single gate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462—Insulated gate field-effect transistors [IGFETs]
    • H10K10/466—Lateral bottom-gate IGFETs comprising only a single gate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/14—Carrier transporting layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/60—Organic compounds having low molecular weight
    • H10K85/615—Polycyclic condensed aromatic hydrocarbons, e.g. anthracene
    • H10K85/621—Aromatic anhydride or imide compounds, e.g. perylene tetra-carboxylic dianhydride or perylene tetracarboxylic di-imide
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/60—Organic compounds having low molecular weight
    • H10K85/649—Aromatic compounds comprising a hetero atom
    • H10K85/654—Aromatic compounds comprising a hetero atom comprising only nitrogen as heteroatom
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/549—Organic PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

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  • Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Optics & Photonics (AREA)
  • Thin Film Transistor (AREA)
JP2007546723A 2004-12-17 2005-12-02 薄膜トランジスタのためのｎ型半導体材料 Pending JP2008524846A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US11/015,897 US7326956B2 (en) 2004-12-17 2004-12-17 Fluorine-containing N,N′-diaryl perylene-based tetracarboxylic diimide compounds as N-type semiconductor materials for thin film transistors
PCT/US2005/043505 WO2006065548A2 (en) 2004-12-17 2005-12-02 N-type semiconductor materials for thin film transistors

Publications (2)

Publication Number Publication Date
JP2008524846A true JP2008524846A (ja) 2008-07-10
JP2008524846A5 JP2008524846A5 (enExample) 2008-12-11

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JP2007546723A Pending JP2008524846A (ja) 2004-12-17 2005-12-02 薄膜トランジスタのためのｎ型半導体材料

Country Status (7)

Country Link
US (1) US7326956B2 (enExample)
EP (1) EP1825533A2 (enExample)
JP (1) JP2008524846A (enExample)
KR (1) KR20070098807A (enExample)
CN (1) CN101084589A (enExample)
TW (1) TW200633285A (enExample)
WO (1) WO2006065548A2 (enExample)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2011052719A1 (ja) 2009-10-29 2011-05-05 大日精化工業株式会社 ペリレンテトラカルボキシジイミド誘導体
WO2011052721A1 (ja) 2009-10-29 2011-05-05 大日精化工業株式会社 有機半導体材料、有機半導体薄膜および有機薄膜トランジスタ
WO2012029544A1 (ja) 2010-08-29 2012-03-08 国立大学法人信州大学 有機半導体微粒子材料、有機半導体薄膜、有機半導体膜形成用分散液、有機半導体薄膜の製造方法および有機薄膜トランジスタ
JP2014519490A (ja) * 2011-05-11 2014-08-14 ビーエーエスエフ ソシエタス・ヨーロピア ハロゲン化ペリレンベースの半導体材料

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KR101148868B1 (ko) * 2004-01-26 2012-05-29 노오쓰웨스턴 유니버시티 페릴렌 ｎ-형 반도체 및 관련된 소자
US7198977B2 (en) * 2004-12-21 2007-04-03 Eastman Kodak Company N,N′-di(phenylalky)-substituted perylene-based tetracarboxylic diimide compounds as n-type semiconductor materials for thin film transistors
GB0506899D0 (en) * 2005-04-05 2005-05-11 Plastic Logic Ltd Multiple conductive layer TFT
US8138075B1 (en) 2006-02-06 2012-03-20 Eberlein Dietmar C Systems and methods for the manufacture of flat panel devices
US7569693B2 (en) * 2006-06-12 2009-08-04 Northwestern University Naphthalene-based semiconductor materials and methods of preparing and use thereof
WO2008051552A2 (en) * 2006-10-25 2008-05-02 Northwestern University Organic semiconductor materials and methods of preparing and use thereof
JP5380296B2 (ja) * 2006-11-17 2014-01-08 ポリエラ コーポレイション ジイミド系半導体材料ならびにジイミド系半導体材料を調製および使用する方法
JP2010515684A (ja) * 2007-01-08 2010-05-13 ポリエラ コーポレイション アレーン−ビス（ジカルボキシイミド）系半導体材料、およびそれを調製するための関連する中間体を調製する方法
CN100456517C (zh) * 2007-01-23 2009-01-28 中国科学院长春应用化学研究所 轴向取代酞菁化合物用于制备有机薄膜晶体管的应用
US8022214B2 (en) * 2007-01-24 2011-09-20 Polyera Corporation Organic semiconductor materials and precursors thereof
US7649199B2 (en) * 2008-04-11 2010-01-19 Eastman Kodak Company N-type semiconductor materials in thin film transistors and electronic devices
KR101012542B1 (ko) * 2008-12-12 2011-02-07 재단법인대구경북과학기술원 고분자 화합물 및 그를 포함하는 태양전지
US8283469B2 (en) * 2010-03-24 2012-10-09 National Tsing Hua University Perylene diimide derivative and organic semiconductor element using the same material
US8530270B2 (en) 2010-04-30 2013-09-10 Eastman Kodak Company Methods of preparing semiconductive compositions and devices
US20110269966A1 (en) 2010-04-30 2011-11-03 Deepak Shukla Semiconducting articles
US8314265B2 (en) 2010-04-30 2012-11-20 Eastman Kodak Company Aromatic amic acids or amic esters and compositions
US8411489B2 (en) 2010-04-30 2013-04-02 Eastman Kodak Company Semiconducting devices and methods of preparing
US8404892B2 (en) 2010-05-27 2013-03-26 Eastman Kodak Company Aromatic amic acid salts and compositions
CN103492387A (zh) 2011-03-03 2014-01-01 巴斯夫欧洲公司 苝基半导体材料
US8471020B2 (en) 2011-03-03 2013-06-25 Basf Se Perylene-based semiconducting materials
CN103764787A (zh) 2011-08-12 2014-04-30 巴斯夫欧洲公司 氟化苝基半导体材料
CN105862133B (zh) * 2015-01-23 2021-04-13 国家纳米科学中心 一种n型有机半导体晶体材料及其制备方法和用途
JP7464397B2 (ja) * 2020-01-31 2024-04-09 保土谷化学工業株式会社 ペリレン誘導体化合物、該化合物を用いた有機半導体用組成物、該有機半導体用組成物を用いた有機薄膜トランジスタ
CN111892605B (zh) * 2020-06-10 2021-11-02 中国科学院化学研究所 新型五元环苝二酰亚胺分子材料及其制备方法与应用
WO2023187690A1 (en) * 2022-03-30 2023-10-05 Oti Lumionics Inc. Nitrogen-containing heterocyclic compounds for forming a patterning coating and devices incorporating same
CN116768892B (zh) * 2023-05-26 2025-10-31 西北工业大学太仓长三角研究院 一种硫代苝二酰亚胺的n型光敏场效应晶体管材料

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JP2002289353A (ja) * 2001-03-26 2002-10-04 Pioneer Electronic Corp 有機半導体ダイオード
WO2004013922A2 (en) * 2002-08-06 2004-02-12 Avecia Limited Organic electronic devices
JP2004247716A (ja) * 2003-01-23 2004-09-02 Mitsubishi Chemicals Corp 積層体の製造方法

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DE10218618A1 (de) * 2002-04-25 2003-11-06 Basf Ag Verfahren zur Herstellung von Perylen-3,4:9,10-tetracarbonsäuredimiden und Perylen-3,4:9,10-tetracarbonsäuredianhydrid sowie von Naphthalin-1,8-dicarbonsäureimiden
EP1361619A3 (en) 2002-05-09 2007-08-15 Konica Corporation Organic thin-film transistor, organic thin-film transistor sheet and manufacturing method thereof
KR101148868B1 (ko) * 2004-01-26 2012-05-29 노오쓰웨스턴 유니버시티 페릴렌 ｎ-형 반도체 및 관련된 소자
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DE1141740B (de) * 1962-01-09 1962-12-27 Basf Ag Verfahren zur Herstellung eines Farbstoffes
JP2002289353A (ja) * 2001-03-26 2002-10-04 Pioneer Electronic Corp 有機半導体ダイオード
WO2004013922A2 (en) * 2002-08-06 2004-02-12 Avecia Limited Organic electronic devices
JP2004247716A (ja) * 2003-01-23 2004-09-02 Mitsubishi Chemicals Corp 積層体の製造方法

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JPN6012005686; Ｈｏｎｇ-Ｚｈｅｎｇ　Ｃｈｅｎ　ｅｔｃ．: 'Ａ　ｎｏｖｅｌ　ｏｒｇａｎｉｃ　ｎ-ｔｙｐｅ　ｍａｔｅｒｉａｌ：ｆｌｕｏｒｉｎａｔｅｄ　ｐｅｒｙｌｅｎｅ　ｄｉｉｍｉｄｅ' Ｓｏｌａｒ　Ｅｎｅｒｇｙ　Ｍａｔｅｒｉａｌｓ　＆　Ｓｏｌａｒ　Ｃｅｌｌｓ Ｖｏｌ．８７, 20041202, ５２１-５２７ *

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2011052719A1 (ja) 2009-10-29 2011-05-05 大日精化工業株式会社 ペリレンテトラカルボキシジイミド誘導体
WO2011052721A1 (ja) 2009-10-29 2011-05-05 大日精化工業株式会社 有機半導体材料、有機半導体薄膜および有機薄膜トランジスタ
US9133193B2 (en) 2009-10-29 2015-09-15 Dainichiseika Color & Chemicals Mfg. Co., Ltd. Organic semiconductor material, organic semiconductor thin film, and organic thin film transistor
WO2012029544A1 (ja) 2010-08-29 2012-03-08 国立大学法人信州大学 有機半導体微粒子材料、有機半導体薄膜、有機半導体膜形成用分散液、有機半導体薄膜の製造方法および有機薄膜トランジスタ
US9518224B2 (en) 2010-08-29 2016-12-13 Shinshu University Organic semiconductor particulate material, organic semiconductor thin-film, dispersion liquid for forming organic semiconductor film, method for producing organic semiconductor thin-film, and organic thin-film transistor
JP2014519490A (ja) * 2011-05-11 2014-08-14 ビーエーエスエフ ソシエタス・ヨーロピア ハロゲン化ペリレンベースの半導体材料

Also Published As

Publication number Publication date
CN101084589A (zh) 2007-12-05
WO2006065548A2 (en) 2006-06-22
US20060131564A1 (en) 2006-06-22
TW200633285A (en) 2006-09-16
WO2006065548A3 (en) 2007-01-04
US7326956B2 (en) 2008-02-05
KR20070098807A (ko) 2007-10-05
EP1825533A2 (en) 2007-08-29

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