KR20070098807A - 박막 트랜지스터용 ｎ-형 반도체 물질 - Google Patents
박막 트랜지스터용 ｎ-형 반도체 물질 Download PDFInfo
- Publication number
- KR20070098807A KR20070098807A KR1020077013632A KR20077013632A KR20070098807A KR 20070098807 A KR20070098807 A KR 20070098807A KR 1020077013632 A KR1020077013632 A KR 1020077013632A KR 20077013632 A KR20077013632 A KR 20077013632A KR 20070098807 A KR20070098807 A KR 20070098807A
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- South Korea
- Prior art keywords
- thin film
- fluorine
- semiconductor material
- electrode
- perylene
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- 125000006615 aromatic heterocyclic group Chemical group 0.000 claims abstract description 11
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- -1 tetracarboxylic diimide compound Chemical class 0.000 claims description 24
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- MZYHMUONCNKCHE-UHFFFAOYSA-N naphthalene-1,2,3,4-tetracarboxylic acid Chemical compound C1=CC=CC2=C(C(O)=O)C(C(=O)O)=C(C(O)=O)C(C(O)=O)=C21 MZYHMUONCNKCHE-UHFFFAOYSA-N 0.000 description 1
- 125000002347 octyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
- 125000000962 organic group Chemical group 0.000 description 1
- 229920000620 organic polymer Polymers 0.000 description 1
- 239000003960 organic solvent Substances 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- SLIUAWYAILUBJU-UHFFFAOYSA-N pentacene Chemical compound C1=CC=CC2=CC3=CC4=CC5=CC=CC=C5C=C4C=C3C=C21 SLIUAWYAILUBJU-UHFFFAOYSA-N 0.000 description 1
- 125000001147 pentyl group Chemical group C(CCCC)* 0.000 description 1
- FVDOBFPYBSDRKH-UHFFFAOYSA-N perylene-3,4,9,10-tetracarboxylic acid Chemical class C=12C3=CC=C(C(O)=O)C2=C(C(O)=O)C=CC=1C1=CC=C(C(O)=O)C2=C1C3=CC=C2C(=O)O FVDOBFPYBSDRKH-UHFFFAOYSA-N 0.000 description 1
- 239000012071 phase Substances 0.000 description 1
- 238000005240 physical vapour deposition Methods 0.000 description 1
- 239000000049 pigment Substances 0.000 description 1
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 1
- 230000010287 polarization Effects 0.000 description 1
- 229920000636 poly(norbornene) polymer Polymers 0.000 description 1
- 229920001467 poly(styrenesulfonates) Polymers 0.000 description 1
- 229920002647 polyamide Polymers 0.000 description 1
- 229920000515 polycarbonate Polymers 0.000 description 1
- 239000004417 polycarbonate Substances 0.000 description 1
- 229920001470 polyketone Polymers 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 239000002861 polymer material Substances 0.000 description 1
- 229920006380 polyphenylene oxide Polymers 0.000 description 1
- 238000007639 printing Methods 0.000 description 1
- 125000001436 propyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
- OGEZSLXPCKHGKO-UHFFFAOYSA-N ptcdi-ph Chemical compound O=C1C(C2=C34)=CC=C3C(C=35)=CC=C(C(N(C=6C=CC=CC=6)C6=O)=O)C5=C6C=CC=3C4=CC=C2C(=O)N1C1=CC=CC=C1 OGEZSLXPCKHGKO-UHFFFAOYSA-N 0.000 description 1
- 125000003226 pyrazolyl group Chemical group 0.000 description 1
- 229920006395 saturated elastomer Polymers 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 239000007790 solid phase Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 238000013112 stability test Methods 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- VEALVRVVWBQVSL-UHFFFAOYSA-N strontium titanate Chemical compound [Sr+2].[O-][Ti]([O-])=O VEALVRVVWBQVSL-UHFFFAOYSA-N 0.000 description 1
- 125000005504 styryl group Chemical group 0.000 description 1
- 238000005092 sublimation method Methods 0.000 description 1
- 229910052717 sulfur Inorganic materials 0.000 description 1
- 239000011593 sulfur Substances 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- 229910001936 tantalum oxide Inorganic materials 0.000 description 1
- 125000000999 tert-butyl group Chemical group [H]C([H])([H])C(*)(C([H])([H])[H])C([H])([H])[H] 0.000 description 1
- 125000006158 tetracarboxylic acid group Chemical group 0.000 description 1
- 238000002207 thermal evaporation Methods 0.000 description 1
- 125000001544 thienyl group Chemical group 0.000 description 1
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 1
- 238000001771 vacuum deposition Methods 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- 238000001947 vapour-phase growth Methods 0.000 description 1
- 125000000391 vinyl group Chemical group [H]C([*])=C([H])[H] 0.000 description 1
- 229920002554 vinyl polymer Polymers 0.000 description 1
- 239000004246 zinc acetate Substances 0.000 description 1
- 229910052984 zinc sulfide Inorganic materials 0.000 description 1
- DRDVZXDWVBGGMH-UHFFFAOYSA-N zinc;sulfide Chemical compound [S-2].[Zn+2] DRDVZXDWVBGGMH-UHFFFAOYSA-N 0.000 description 1
Images
Classifications
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09B—ORGANIC DYES OR CLOSELY-RELATED COMPOUNDS FOR PRODUCING DYES, e.g. PIGMENTS; MORDANTS; LAKES
- C09B5/00—Dyes with an anthracene nucleus condensed with one or more heterocyclic rings with or without carbocyclic rings
- C09B5/62—Cyclic imides or amidines of peri-dicarboxylic acids of the anthracene, benzanthrene, or perylene series
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
- H10K10/40—Organic transistors
- H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
- H10K10/462—Insulated gate field-effect transistors [IGFETs]
- H10K10/464—Lateral top-gate IGFETs comprising only a single gate
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
- H10K10/40—Organic transistors
- H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
- H10K10/462—Insulated gate field-effect transistors [IGFETs]
- H10K10/466—Lateral bottom-gate IGFETs comprising only a single gate
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
- H10K50/14—Carrier transporting layers
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/60—Organic compounds having low molecular weight
- H10K85/615—Polycyclic condensed aromatic hydrocarbons, e.g. anthracene
- H10K85/621—Aromatic anhydride or imide compounds, e.g. perylene tetra-carboxylic dianhydride or perylene tetracarboxylic di-imide
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/60—Organic compounds having low molecular weight
- H10K85/649—Aromatic compounds comprising a hetero atom
- H10K85/654—Aromatic compounds comprising a hetero atom comprising only nitrogen as heteroatom
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/549—Organic PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Spectroscopy & Molecular Physics (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Organic Chemistry (AREA)
- Optics & Photonics (AREA)
- Thin Film Transistor (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US11/015,897 | 2004-12-17 | ||
| US11/015,897 US7326956B2 (en) | 2004-12-17 | 2004-12-17 | Fluorine-containing N,N′-diaryl perylene-based tetracarboxylic diimide compounds as N-type semiconductor materials for thin film transistors |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| KR20070098807A true KR20070098807A (ko) | 2007-10-05 |
Family
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
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| KR1020077013632A Withdrawn KR20070098807A (ko) | 2004-12-17 | 2005-12-02 | 박막 트랜지스터용 ｎ-형 반도체 물질 |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US7326956B2 (enExample) |
| EP (1) | EP1825533A2 (enExample) |
| JP (1) | JP2008524846A (enExample) |
| KR (1) | KR20070098807A (enExample) |
| CN (1) | CN101084589A (enExample) |
| TW (1) | TW200633285A (enExample) |
| WO (1) | WO2006065548A2 (enExample) |
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| JP4921982B2 (ja) * | 2004-01-26 | 2012-04-25 | ノースウエスタン ユニバーシティ | ペリレンｎ型半導体及び関連装置 |
| US7198977B2 (en) * | 2004-12-21 | 2007-04-03 | Eastman Kodak Company | N,N′-di(phenylalky)-substituted perylene-based tetracarboxylic diimide compounds as n-type semiconductor materials for thin film transistors |
| GB0506899D0 (en) * | 2005-04-05 | 2005-05-11 | Plastic Logic Ltd | Multiple conductive layer TFT |
| US8138075B1 (en) | 2006-02-06 | 2012-03-20 | Eberlein Dietmar C | Systems and methods for the manufacture of flat panel devices |
| WO2007146250A2 (en) * | 2006-06-12 | 2007-12-21 | Northwestern University | Naphthalene-based semiconductor materials and methods of preparing and use thereof |
| WO2008051552A2 (en) * | 2006-10-25 | 2008-05-02 | Northwestern University | Organic semiconductor materials and methods of preparing and use thereof |
| WO2008063609A2 (en) | 2006-11-17 | 2008-05-29 | Polyera Corporation | Diimide-based semiconductor materials and methods of preparing and using the same |
| EP2104676A2 (en) * | 2007-01-08 | 2009-09-30 | Polyera Corporation | Methods for preparing arene-bis(dicarboximide)-based semiconducting materials and related intermediates for preparing same |
| CN100456517C (zh) * | 2007-01-23 | 2009-01-28 | 中国科学院长春应用化学研究所 | 轴向取代酞菁化合物用于制备有机薄膜晶体管的应用 |
| US8022214B2 (en) * | 2007-01-24 | 2011-09-20 | Polyera Corporation | Organic semiconductor materials and precursors thereof |
| US7649199B2 (en) * | 2008-04-11 | 2010-01-19 | Eastman Kodak Company | N-type semiconductor materials in thin film transistors and electronic devices |
| KR101012542B1 (ko) * | 2008-12-12 | 2011-02-07 | 재단법인대구경북과학기술원 | 고분자 화합물 및 그를 포함하는 태양전지 |
| CN102574806B (zh) | 2009-10-29 | 2014-07-02 | 大日精化工业株式会社 | 苝四甲酰二亚胺衍生物 |
| JP5665137B2 (ja) | 2009-10-29 | 2015-02-04 | 大日精化工業株式会社 | 有機半導体材料、有機半導体薄膜および有機薄膜トランジスタ |
| US8283469B2 (en) * | 2010-03-24 | 2012-10-09 | National Tsing Hua University | Perylene diimide derivative and organic semiconductor element using the same material |
| US20110269966A1 (en) | 2010-04-30 | 2011-11-03 | Deepak Shukla | Semiconducting articles |
| US8530270B2 (en) | 2010-04-30 | 2013-09-10 | Eastman Kodak Company | Methods of preparing semiconductive compositions and devices |
| US8411489B2 (en) | 2010-04-30 | 2013-04-02 | Eastman Kodak Company | Semiconducting devices and methods of preparing |
| US8314265B2 (en) | 2010-04-30 | 2012-11-20 | Eastman Kodak Company | Aromatic amic acids or amic esters and compositions |
| US8404892B2 (en) | 2010-05-27 | 2013-03-26 | Eastman Kodak Company | Aromatic amic acid salts and compositions |
| KR101473124B1 (ko) | 2010-08-29 | 2014-12-15 | 고쿠리츠 다이가쿠 호우징 신슈 다이가쿠 | 유기 반도체 미립자 재료, 유기 반도체 박막, 유기 반도체막 형성용 분산액, 유기 반도체 박막의 제조 방법 및 유기 박막 트랜지스터 |
| JP2014514256A (ja) | 2011-03-03 | 2014-06-19 | ビーエーエスエフ ソシエタス・ヨーロピア | ペリレン系半導体材料 |
| US8471020B2 (en) | 2011-03-03 | 2013-06-25 | Basf Se | Perylene-based semiconducting materials |
| EP2707455A1 (en) * | 2011-05-11 | 2014-03-19 | Basf Se | Halogenated perylene-based semiconducting materials |
| KR20140058621A (ko) | 2011-08-12 | 2014-05-14 | 바스프 에스이 | 플루오린화 페릴렌계 반도체 물질 |
| CN105862133B (zh) * | 2015-01-23 | 2021-04-13 | 国家纳米科学中心 | 一种n型有机半导体晶体材料及其制备方法和用途 |
| JP7464397B2 (ja) * | 2020-01-31 | 2024-04-09 | 保土谷化学工業株式会社 | ペリレン誘導体化合物、該化合物を用いた有機半導体用組成物、該有機半導体用組成物を用いた有機薄膜トランジスタ |
| CN111892605B (zh) * | 2020-06-10 | 2021-11-02 | 中国科学院化学研究所 | 新型五元环苝二酰亚胺分子材料及其制备方法与应用 |
| WO2023187690A1 (en) * | 2022-03-30 | 2023-10-05 | Oti Lumionics Inc. | Nitrogen-containing heterocyclic compounds for forming a patterning coating and devices incorporating same |
| CN116768892B (zh) * | 2023-05-26 | 2025-10-31 | 西北工业大学太仓长三角研究院 | 一种硫代苝二酰亚胺的n型光敏场效应晶体管材料 |
Family Cites Families (13)
| Publication number | Priority date | Publication date | Assignee | Title |
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| DE1141740B (de) * | 1962-01-09 | 1962-12-27 | Basf Ag | Verfahren zur Herstellung eines Farbstoffes |
| FR2664430B1 (fr) | 1990-07-04 | 1992-09-18 | Centre Nat Rech Scient | Transistor a effet de champ en couche mince de structure mis, dont l'isolant et le semiconducteur sont realises en materiaux organiques. |
| US6387727B1 (en) | 1999-03-29 | 2002-05-14 | Agere Systems Guardian Corp. | Device comprising n-channel semiconductor material |
| US6635507B1 (en) | 1999-07-14 | 2003-10-21 | Hughes Electronics Corporation | Monolithic bypass-diode and solar-cell string assembly |
| JP2002289353A (ja) | 2001-03-26 | 2002-10-04 | Pioneer Electronic Corp | 有機半導体ダイオード |
| US7026643B2 (en) | 2001-05-04 | 2006-04-11 | International Business Machines Corporation | Organic n-channel semiconductor device of N,N' 3,4,9,10 perylene tetracarboxylic diimide |
| CN1190709C (zh) * | 2002-01-25 | 2005-02-23 | 浙江大学 | 含有氟代苝酰亚胺的单层有机光电导体及其制备方法 |
| DE10218618A1 (de) * | 2002-04-25 | 2003-11-06 | Basf Ag | Verfahren zur Herstellung von Perylen-3,4:9,10-tetracarbonsäuredimiden und Perylen-3,4:9,10-tetracarbonsäuredianhydrid sowie von Naphthalin-1,8-dicarbonsäureimiden |
| EP1361619A3 (en) | 2002-05-09 | 2007-08-15 | Konica Corporation | Organic thin-film transistor, organic thin-film transistor sheet and manufacturing method thereof |
| US7332369B2 (en) * | 2002-08-06 | 2008-02-19 | Merck Patent Gmbh | Organic electronic devices |
| JP2004247716A (ja) * | 2003-01-23 | 2004-09-02 | Mitsubishi Chemicals Corp | 積層体の製造方法 |
| JP4921982B2 (ja) | 2004-01-26 | 2012-04-25 | ノースウエスタン ユニバーシティ | ペリレンｎ型半導体及び関連装置 |
| US7057205B2 (en) | 2004-03-17 | 2006-06-06 | Lucent Technologies Inc. | P-type OFET with fluorinated channels |
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2004
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-
2005
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- 2005-12-02 KR KR1020077013632A patent/KR20070098807A/ko not_active Withdrawn
- 2005-12-02 EP EP05852668A patent/EP1825533A2/en not_active Withdrawn
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- 2005-12-02 JP JP2007546723A patent/JP2008524846A/ja active Pending
- 2005-12-16 TW TW094144605A patent/TW200633285A/zh unknown
Also Published As
| Publication number | Publication date |
|---|---|
| JP2008524846A (ja) | 2008-07-10 |
| WO2006065548A3 (en) | 2007-01-04 |
| US20060131564A1 (en) | 2006-06-22 |
| CN101084589A (zh) | 2007-12-05 |
| WO2006065548A2 (en) | 2006-06-22 |
| US7326956B2 (en) | 2008-02-05 |
| EP1825533A2 (en) | 2007-08-29 |
| TW200633285A (en) | 2006-09-16 |
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