CN101084589A - 用于薄膜晶体管的n型半导体材料 - Google Patents

用于薄膜晶体管的n型半导体材料 Download PDF

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Publication number
CN101084589A
CN101084589A CNA2005800432979A CN200580043297A CN101084589A CN 101084589 A CN101084589 A CN 101084589A CN A2005800432979 A CNA2005800432979 A CN A2005800432979A CN 200580043297 A CN200580043297 A CN 200580043297A CN 101084589 A CN101084589 A CN 101084589A
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CN
China
Prior art keywords
goods
film
thin
electrode
gate
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Pending
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CNA2005800432979A
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English (en)
Chinese (zh)
Inventor
D·舒克拉
D·C·弗里曼
S·F·奈尔逊
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Eastman Kodak Co
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Eastman Kodak Co
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Publication of CN101084589A publication Critical patent/CN101084589A/zh
Pending legal-status Critical Current

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    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09B—ORGANIC DYES OR CLOSELY-RELATED COMPOUNDS FOR PRODUCING DYES, e.g. PIGMENTS; MORDANTS; LAKES
    • C09B5/00—Dyes with an anthracene nucleus condensed with one or more heterocyclic rings with or without carbocyclic rings
    • C09B5/62—Cyclic imides or amidines of peri-dicarboxylic acids of the anthracene, benzanthrene, or perylene series
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462—Insulated gate field-effect transistors [IGFETs]
    • H10K10/464—Lateral top-gate IGFETs comprising only a single gate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462—Insulated gate field-effect transistors [IGFETs]
    • H10K10/466—Lateral bottom-gate IGFETs comprising only a single gate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/14—Carrier transporting layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/60—Organic compounds having low molecular weight
    • H10K85/615—Polycyclic condensed aromatic hydrocarbons, e.g. anthracene
    • H10K85/621—Aromatic anhydride or imide compounds, e.g. perylene tetra-carboxylic dianhydride or perylene tetracarboxylic di-imide
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/60—Organic compounds having low molecular weight
    • H10K85/649—Aromatic compounds comprising a hetero atom
    • H10K85/654—Aromatic compounds comprising a hetero atom comprising only nitrogen as heteroatom
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/549—Organic PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

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  • Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Optics & Photonics (AREA)
  • Thin Film Transistor (AREA)
CNA2005800432979A 2004-12-17 2005-12-02 用于薄膜晶体管的n型半导体材料 Pending CN101084589A (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US11/015,897 2004-12-17
US11/015,897 US7326956B2 (en) 2004-12-17 2004-12-17 Fluorine-containing N,N′-diaryl perylene-based tetracarboxylic diimide compounds as N-type semiconductor materials for thin film transistors

Publications (1)

Publication Number Publication Date
CN101084589A true CN101084589A (zh) 2007-12-05

Family

ID=36588362

Family Applications (1)

Application Number Title Priority Date Filing Date
CNA2005800432979A Pending CN101084589A (zh) 2004-12-17 2005-12-02 用于薄膜晶体管的n型半导体材料

Country Status (7)

Country Link
US (1) US7326956B2 (enExample)
EP (1) EP1825533A2 (enExample)
JP (1) JP2008524846A (enExample)
KR (1) KR20070098807A (enExample)
CN (1) CN101084589A (enExample)
TW (1) TW200633285A (enExample)
WO (1) WO2006065548A2 (enExample)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN105862133A (zh) * 2015-01-23 2016-08-17 国家纳米科学中心 一种n型有机半导体晶体材料及其制备方法和用途
CN111892605A (zh) * 2020-06-10 2020-11-06 中国科学院化学研究所 新型五元环苝二酰亚胺分子材料及其制备方法与应用

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CN1980791B (zh) * 2004-01-26 2012-08-22 西北大学 苝n-型半导体和相关器件
US7198977B2 (en) * 2004-12-21 2007-04-03 Eastman Kodak Company N,N′-di(phenylalky)-substituted perylene-based tetracarboxylic diimide compounds as n-type semiconductor materials for thin film transistors
GB0506899D0 (en) * 2005-04-05 2005-05-11 Plastic Logic Ltd Multiple conductive layer TFT
US8138075B1 (en) 2006-02-06 2012-03-20 Eberlein Dietmar C Systems and methods for the manufacture of flat panel devices
US7569693B2 (en) * 2006-06-12 2009-08-04 Northwestern University Naphthalene-based semiconductor materials and methods of preparing and use thereof
EP2089398A2 (en) * 2006-10-25 2009-08-19 Polyera Corporation Organic semiconductor materials and methods of preparing and use thereof
US7902363B2 (en) 2006-11-17 2011-03-08 Polyera Corporation Diimide-based semiconductor materials and methods of preparing and using the same
WO2008085942A2 (en) * 2007-01-08 2008-07-17 Polyera Corporation Methods for preparing arene-bis(dicarboximide)-based semiconducting materials and related intermediates for preparing same
CN100456517C (zh) * 2007-01-23 2009-01-28 中国科学院长春应用化学研究所 轴向取代酞菁化合物用于制备有机薄膜晶体管的应用
WO2008091670A2 (en) * 2007-01-24 2008-07-31 Polyera Corporation Organic semiconductor materials and precursors thereof
US7649199B2 (en) * 2008-04-11 2010-01-19 Eastman Kodak Company N-type semiconductor materials in thin film transistors and electronic devices
KR101012542B1 (ko) * 2008-12-12 2011-02-07 재단법인대구경북과학기술원 고분자 화합물 및 그를 포함하는 태양전지
KR101491888B1 (ko) 2009-10-29 2015-02-09 다이니치 세이카 고교 가부시키가이샤 페릴렌 테트라카르복시디이미드 유도체
US9133193B2 (en) 2009-10-29 2015-09-15 Dainichiseika Color & Chemicals Mfg. Co., Ltd. Organic semiconductor material, organic semiconductor thin film, and organic thin film transistor
US8283469B2 (en) * 2010-03-24 2012-10-09 National Tsing Hua University Perylene diimide derivative and organic semiconductor element using the same material
US8314265B2 (en) 2010-04-30 2012-11-20 Eastman Kodak Company Aromatic amic acids or amic esters and compositions
US8411489B2 (en) 2010-04-30 2013-04-02 Eastman Kodak Company Semiconducting devices and methods of preparing
US20110269966A1 (en) 2010-04-30 2011-11-03 Deepak Shukla Semiconducting articles
US8530270B2 (en) 2010-04-30 2013-09-10 Eastman Kodak Company Methods of preparing semiconductive compositions and devices
US8404892B2 (en) 2010-05-27 2013-03-26 Eastman Kodak Company Aromatic amic acid salts and compositions
CN103081149B (zh) 2010-08-29 2016-07-06 国立大学法人信州大学 有机半导体微粒材料、有机半导体薄膜、有机半导体膜形成用分散液、有机半导体薄膜的制造方法及有机薄膜晶体管
KR20130128468A (ko) 2011-03-03 2013-11-26 바스프 에스이 페릴렌-기재 반도체 물질
US8471020B2 (en) 2011-03-03 2013-06-25 Basf Se Perylene-based semiconducting materials
KR20140021014A (ko) 2011-05-11 2014-02-19 바스프 에스이 할로겐화 페릴렌계 반도체 물질
CN103764787A (zh) 2011-08-12 2014-04-30 巴斯夫欧洲公司 氟化苝基半导体材料
JP7464397B2 (ja) * 2020-01-31 2024-04-09 保土谷化学工業株式会社 ペリレン誘導体化合物、該化合物を用いた有機半導体用組成物、該有機半導体用組成物を用いた有機薄膜トランジスタ
WO2023187690A1 (en) * 2022-03-30 2023-10-05 Oti Lumionics Inc. Nitrogen-containing heterocyclic compounds for forming a patterning coating and devices incorporating same
CN116768892B (zh) * 2023-05-26 2025-10-31 西北工业大学太仓长三角研究院 一种硫代苝二酰亚胺的n型光敏场效应晶体管材料

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CN1190709C (zh) * 2002-01-25 2005-02-23 浙江大学 含有氟代苝酰亚胺的单层有机光电导体及其制备方法
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Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN105862133A (zh) * 2015-01-23 2016-08-17 国家纳米科学中心 一种n型有机半导体晶体材料及其制备方法和用途
CN111892605A (zh) * 2020-06-10 2020-11-06 中国科学院化学研究所 新型五元环苝二酰亚胺分子材料及其制备方法与应用
CN111892605B (zh) * 2020-06-10 2021-11-02 中国科学院化学研究所 新型五元环苝二酰亚胺分子材料及其制备方法与应用

Also Published As

Publication number Publication date
EP1825533A2 (en) 2007-08-29
KR20070098807A (ko) 2007-10-05
WO2006065548A2 (en) 2006-06-22
US7326956B2 (en) 2008-02-05
WO2006065548A3 (en) 2007-01-04
TW200633285A (en) 2006-09-16
US20060131564A1 (en) 2006-06-22
JP2008524846A (ja) 2008-07-10

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Open date: 20071205