CN101849300B - 用于薄膜晶体管的四羧酸二酰亚胺半导体 - Google Patents

用于薄膜晶体管的四羧酸二酰亚胺半导体 Download PDF

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Publication number
CN101849300B
CN101849300B CN2008800227821A CN200880022782A CN101849300B CN 101849300 B CN101849300 B CN 101849300B CN 2008800227821 A CN2008800227821 A CN 2008800227821A CN 200880022782 A CN200880022782 A CN 200880022782A CN 101849300 B CN101849300 B CN 101849300B
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CN
China
Prior art keywords
thin film
organic
article
heterocycloalkyl
substituted
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Expired - Fee Related
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CN2008800227821A
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English (en)
Chinese (zh)
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CN101849300A (zh
Inventor
D·舒克拉
T·R·韦尔特
W·G·埃亨
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Eastman Kodak Co
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Eastman Kodak Co
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/60—Organic compounds having low molecular weight
    • H10K85/615—Polycyclic condensed aromatic hydrocarbons, e.g. anthracene
    • H10K85/621—Aromatic anhydride or imide compounds, e.g. perylene tetra-carboxylic dianhydride or perylene tetracarboxylic di-imide
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09B—ORGANIC DYES OR CLOSELY-RELATED COMPOUNDS FOR PRODUCING DYES, e.g. PIGMENTS; MORDANTS; LAKES
    • C09B57/00—Other synthetic dyes of known constitution
    • C09B57/08—Naphthalimide dyes; Phthalimide dyes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462—Insulated gate field-effect transistors [IGFETs]
    • H10K10/466—Lateral bottom-gate IGFETs comprising only a single gate
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/549—Organic PV cells

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  • Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Thin Film Transistor (AREA)
  • Electroluminescent Light Sources (AREA)
  • Nitrogen Condensed Heterocyclic Rings (AREA)
  • Nitrogen And Oxygen Or Sulfur-Condensed Heterocyclic Ring Systems (AREA)
  • Photovoltaic Devices (AREA)
CN2008800227821A 2007-06-29 2008-06-25 用于薄膜晶体管的四羧酸二酰亚胺半导体 Expired - Fee Related CN101849300B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US11/771,196 US7858970B2 (en) 2007-06-29 2007-06-29 Heterocycloalkyl-substituted naphthalene-based tetracarboxylic diimide compounds as N-type semiconductor materials for thin film transistors
US11/771,196 2007-06-29
PCT/US2008/007913 WO2009005669A2 (en) 2007-06-29 2008-06-25 Tetracarboxylic diimide semiconductor for thin film transistors

Publications (2)

Publication Number Publication Date
CN101849300A CN101849300A (zh) 2010-09-29
CN101849300B true CN101849300B (zh) 2013-04-03

Family

ID=40159276

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CN2008800227821A Expired - Fee Related CN101849300B (zh) 2007-06-29 2008-06-25 用于薄膜晶体管的四羧酸二酰亚胺半导体

Country Status (6)

Country Link
US (1) US7858970B2 (enExample)
EP (1) EP2162932A2 (enExample)
JP (1) JP2010534403A (enExample)
CN (1) CN101849300B (enExample)
TW (1) TW200908408A (enExample)
WO (1) WO2009005669A2 (enExample)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5155616B2 (ja) * 2007-07-25 2013-03-06 沖プリンテッドサーキット株式会社 Ｒｆｉｄタグ、ｒｆｉｄシステムおよびｒｆｉｄタグの製造方法
US8692238B2 (en) 2012-04-25 2014-04-08 Eastman Kodak Company Semiconductor devices and methods of preparation
US8779415B2 (en) 2012-11-08 2014-07-15 Eastman Kodak Company Devices containing organic polymeric multi-metallic composites
US9541829B2 (en) 2013-07-24 2017-01-10 Orthogonal, Inc. Cross-linkable fluorinated photopolymer
KR20160118340A (ko) 2014-02-07 2016-10-11 올싸거널 인코포레이티드 교차-결합 가능한 플루오르화된 포토폴리머
CN106688050B (zh) 2014-06-11 2018-09-18 伊斯曼柯达公司 具有带含硫代硫酸盐聚合物的电介质层的器件
CN104976947A (zh) * 2015-07-20 2015-10-14 天津大学 一种柔性薄膜场效应晶体管曲率测量传感器
US11022592B2 (en) 2015-12-02 2021-06-01 University Of Utah Research Foundation Chemical self-doping of one-dimensional organic nanomaterials for high conductivity application in chemiresistive sensing gas or vapor

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2951349A1 (de) 1979-12-20 1981-07-02 Bayer Ag, 5090 Leverkusen Naphthalintetracarbonsaeurediimide als elektrische halbleiter und photoleiter
US6387727B1 (en) 1999-03-29 2002-05-14 Agere Systems Guardian Corp. Device comprising n-channel semiconductor material
KR100561357B1 (ko) 2003-11-21 2006-03-16 삼성전자주식회사 나프탈렌테트라카르복시디이미드 유도체 및 이를 이용한전자사진 감광체
US20050214471A1 (en) 2003-12-31 2005-09-29 James Theobald Molecular templating of a surface
WO2005076815A2 (en) 2004-01-26 2005-08-25 Northwestern University PERYLENE n-TYPE SEMICONDUCTORS AND RELATED DEVICES
US7763727B2 (en) 2004-03-29 2010-07-27 Mitsui Chemicals, Inc. Compound and organic electronic device using the same
JP2006045165A (ja) 2004-08-09 2006-02-16 Mitsui Chemicals Inc テトラカルボン酸誘導体、および該化合物を用いた電子写真感光体、電子写真装置
US7422777B2 (en) * 2005-11-22 2008-09-09 Eastman Kodak Company N,N′-dicycloalkyl-substituted naphthalene-based tetracarboxylic diimide compounds as n-type semiconductor materials for thin film transistors

Also Published As

Publication number Publication date
JP2010534403A (ja) 2010-11-04
WO2009005669A3 (en) 2009-03-12
TW200908408A (en) 2009-02-16
CN101849300A (zh) 2010-09-29
WO2009005669A2 (en) 2009-01-08
EP2162932A2 (en) 2010-03-17
US20090001354A1 (en) 2009-01-01
US7858970B2 (en) 2010-12-28

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Granted publication date: 20130403

Termination date: 20180625