JP2010534403A - 薄膜トランジスタのためのテトラカルボン酸ジイミド半導体 - Google Patents

薄膜トランジスタのためのテトラカルボン酸ジイミド半導体 Download PDF

Info

Publication number
JP2010534403A
JP2010534403A JP2010514797A JP2010514797A JP2010534403A JP 2010534403 A JP2010534403 A JP 2010534403A JP 2010514797 A JP2010514797 A JP 2010514797A JP 2010514797 A JP2010514797 A JP 2010514797A JP 2010534403 A JP2010534403 A JP 2010534403A
Authority
JP
Japan
Prior art keywords
article
substituted
thin film
group
heterocycloalkyl
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
JP2010514797A
Other languages
English (en)
Japanese (ja)
Other versions
JP2010534403A5 (enExample
Inventor
シュクラ，ディーパック
ロバート ウェルター，トーマス
ジー． エーハン，ウェンディ
Original Assignee
イーストマン コダック カンパニー
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by イーストマン コダック カンパニー filed Critical イーストマン コダック カンパニー
Publication of JP2010534403A publication Critical patent/JP2010534403A/ja
Publication of JP2010534403A5 publication Critical patent/JP2010534403A5/ja
Ceased legal-status Critical Current

Links

Images

Classifications

    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09B—ORGANIC DYES OR CLOSELY-RELATED COMPOUNDS FOR PRODUCING DYES, e.g. PIGMENTS; MORDANTS; LAKES
    • C09B57/00—Other synthetic dyes of known constitution
    • C09B57/08—Naphthalimide dyes; Phthalimide dyes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/60—Organic compounds having low molecular weight
    • H10K85/615—Polycyclic condensed aromatic hydrocarbons, e.g. anthracene
    • H10K85/621—Aromatic anhydride or imide compounds, e.g. perylene tetra-carboxylic dianhydride or perylene tetracarboxylic di-imide
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462—Insulated gate field-effect transistors [IGFETs]
    • H10K10/466—Lateral bottom-gate IGFETs comprising only a single gate
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/549—Organic PV cells

Landscapes

  • Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Thin Film Transistor (AREA)
  • Nitrogen Condensed Heterocyclic Rings (AREA)
  • Nitrogen And Oxygen Or Sulfur-Condensed Heterocyclic Ring Systems (AREA)
  • Photovoltaic Devices (AREA)
  • Electroluminescent Light Sources (AREA)
JP2010514797A 2007-06-29 2008-06-25 薄膜トランジスタのためのテトラカルボン酸ジイミド半導体 Ceased JP2010534403A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US11/771,196 US7858970B2 (en) 2007-06-29 2007-06-29 Heterocycloalkyl-substituted naphthalene-based tetracarboxylic diimide compounds as N-type semiconductor materials for thin film transistors
PCT/US2008/007913 WO2009005669A2 (en) 2007-06-29 2008-06-25 Tetracarboxylic diimide semiconductor for thin film transistors

Publications (2)

Publication Number Publication Date
JP2010534403A true JP2010534403A (ja) 2010-11-04
JP2010534403A5 JP2010534403A5 (enExample) 2011-08-04

Family

ID=40159276

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2010514797A Ceased JP2010534403A (ja) 2007-06-29 2008-06-25 薄膜トランジスタのためのテトラカルボン酸ジイミド半導体

Country Status (6)

Country Link
US (1) US7858970B2 (enExample)
EP (1) EP2162932A2 (enExample)
JP (1) JP2010534403A (enExample)
CN (1) CN101849300B (enExample)
TW (1) TW200908408A (enExample)
WO (1) WO2009005669A2 (enExample)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5155616B2 (ja) * 2007-07-25 2013-03-06 沖プリンテッドサーキット株式会社 Ｒｆｉｄタグ、ｒｆｉｄシステムおよびｒｆｉｄタグの製造方法
US8692238B2 (en) 2012-04-25 2014-04-08 Eastman Kodak Company Semiconductor devices and methods of preparation
US8779415B2 (en) 2012-11-08 2014-07-15 Eastman Kodak Company Devices containing organic polymeric multi-metallic composites
US9541829B2 (en) 2013-07-24 2017-01-10 Orthogonal, Inc. Cross-linkable fluorinated photopolymer
KR20160118340A (ko) 2014-02-07 2016-10-11 올싸거널 인코포레이티드 교차-결합 가능한 플루오르화된 포토폴리머
EP3155623B1 (en) 2014-06-11 2019-05-08 Eastman Kodak Company Devices having dielectric layers with thiosulfate-containing polymers
CN104976947A (zh) * 2015-07-20 2015-10-14 天津大学 一种柔性薄膜场效应晶体管曲率测量传感器
EP3383876B1 (en) * 2015-12-02 2025-04-23 University of Utah Research Foundation Chemical self-doping of one-dimensional organic nanomaterials for high conductivity application in chemiresistive sensing gas or vapor

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5695241A (en) * 1979-12-20 1981-08-01 Bayer Ag Naphthalene tetracarbonic acid diimide as semicondctor and photoconductor
WO2005092901A1 (ja) * 2004-03-29 2005-10-06 Mitsui Chemicals, Inc. 新規化合物、および該化合物を用いた有機エレクトロニクス素子
JP2006045165A (ja) * 2004-08-09 2006-02-16 Mitsui Chemicals Inc テトラカルボン酸誘導体、および該化合物を用いた電子写真感光体、電子写真装置
US20070116895A1 (en) * 2005-11-22 2007-05-24 Eastman Kodak Company N,N'-dicycloalkyl-substituted naphthalene-based tetracarboxylic diimide compounds as n-type semiconductor materials for thin film transistors

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6387727B1 (en) * 1999-03-29 2002-05-14 Agere Systems Guardian Corp. Device comprising n-channel semiconductor material
KR100561357B1 (ko) * 2003-11-21 2006-03-16 삼성전자주식회사 나프탈렌테트라카르복시디이미드 유도체 및 이를 이용한전자사진 감광체
US20050214471A1 (en) * 2003-12-31 2005-09-29 James Theobald Molecular templating of a surface
CA2554302C (en) * 2004-01-26 2013-03-26 Northwestern University Perylene n-type semiconductors and related devices

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5695241A (en) * 1979-12-20 1981-08-01 Bayer Ag Naphthalene tetracarbonic acid diimide as semicondctor and photoconductor
WO2005092901A1 (ja) * 2004-03-29 2005-10-06 Mitsui Chemicals, Inc. 新規化合物、および該化合物を用いた有機エレクトロニクス素子
JP2006045165A (ja) * 2004-08-09 2006-02-16 Mitsui Chemicals Inc テトラカルボン酸誘導体、および該化合物を用いた電子写真感光体、電子写真装置
US20070116895A1 (en) * 2005-11-22 2007-05-24 Eastman Kodak Company N,N'-dicycloalkyl-substituted naphthalene-based tetracarboxylic diimide compounds as n-type semiconductor materials for thin film transistors
JP2009516930A (ja) * 2005-11-22 2009-04-23 イーストマン コダック カンパニー 半導体材料としてのナフタレン系テトラカルボン酸ジイミド

Also Published As

Publication number Publication date
TW200908408A (en) 2009-02-16
CN101849300B (zh) 2013-04-03
WO2009005669A3 (en) 2009-03-12
EP2162932A2 (en) 2010-03-17
US20090001354A1 (en) 2009-01-01
WO2009005669A2 (en) 2009-01-08
US7858970B2 (en) 2010-12-28
CN101849300A (zh) 2010-09-29

Similar Documents

Publication Publication Date Title
JP5336385B2 (ja) 半導体材料としてのナフタレン系テトラカルボン酸ジイミド化合物
US7807994B2 (en) N-type semiconductor materials for thin film transistors
TWI416721B (zh) 作為ｎ型半導體材料之經ｎ，ｎ’-二環烷基取代之以萘為主的四羧酸二醯亞胺
US7981719B2 (en) N,N′-di(arylalkyl)-substituted naphthalene-based tetracarboxylic diimide compounds as n-type semiconductor materials for thin film transistors
JP5485981B2 (ja) 薄膜トランジスタにおけるｎ型半導体材料
TWI423493B (zh) 用於薄膜電晶體之ｎ型半導體材料、製造薄膜半導體裝置之方法、電子裝置及積體電路
US7326956B2 (en) Fluorine-containing N,N′-diaryl perylene-based tetracarboxylic diimide compounds as N-type semiconductor materials for thin film transistors
CN101849300B (zh) 用于薄膜晶体管的四羧酸二酰亚胺半导体

Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20110616

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20110616

A761 Written withdrawal of application

Free format text: JAPANESE INTERMEDIATE CODE: A761

Effective date: 20130502

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20130507

AA92 Notification that decision to refuse application was cancelled

Free format text: JAPANESE INTERMEDIATE CODE: A971092

Effective date: 20130521