JP2009514223A - 薄膜トランジスタのためのｎ型半導体材料 - Google Patents

薄膜トランジスタのためのｎ型半導体材料 Download PDF

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Publication number
JP2009514223A
JP2009514223A JP2008537779A JP2008537779A JP2009514223A JP 2009514223 A JP2009514223 A JP 2009514223A JP 2008537779 A JP2008537779 A JP 2008537779A JP 2008537779 A JP2008537779 A JP 2008537779A JP 2009514223 A JP2009514223 A JP 2009514223A
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Prior art keywords
thin film
article
group
organic
semiconductor material
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JP2008537779A
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English (en)
Japanese (ja)
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JP2009514223A5 (enExample
Inventor
シュクラ，ディーパック
キャロル フリーマン，ダイアン
フォレスター ネルソン，シェルビー
トッド キャリー，ジェフリー
ジー． アヘアーン，ウェンディ
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イーストマン コダック カンパニー
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Application filed by イーストマン コダック カンパニー filed Critical イーストマン コダック カンパニー
Publication of JP2009514223A publication Critical patent/JP2009514223A/ja
Publication of JP2009514223A5 publication Critical patent/JP2009514223A5/ja
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/60—Organic compounds having low molecular weight
    • H10K85/615—Polycyclic condensed aromatic hydrocarbons, e.g. anthracene
    • H10K85/621—Aromatic anhydride or imide compounds, e.g. perylene tetra-carboxylic dianhydride or perylene tetracarboxylic di-imide
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09B—ORGANIC DYES OR CLOSELY-RELATED COMPOUNDS FOR PRODUCING DYES, e.g. PIGMENTS; MORDANTS; LAKES
    • C09B57/00—Other synthetic dyes of known constitution
    • C09B57/08—Naphthalimide dyes; Phthalimide dyes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462—Insulated gate field-effect transistors [IGFETs]
    • H10K10/466—Lateral bottom-gate IGFETs comprising only a single gate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/10—Deposition of organic active material
    • H10K71/16—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/549—Organic PV cells

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  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Physics & Mathematics (AREA)
  • Materials Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Composite Materials (AREA)
  • Organic Chemistry (AREA)
  • Thin Film Transistor (AREA)
  • Nitrogen Condensed Heterocyclic Rings (AREA)
JP2008537779A 2005-10-31 2006-10-16 薄膜トランジスタのためのｎ型半導体材料 Pending JP2009514223A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US11/263,111 US7629605B2 (en) 2005-10-31 2005-10-31 N-type semiconductor materials for thin film transistors
PCT/US2006/040750 WO2007053303A2 (en) 2005-10-31 2006-10-16 N-type semiconductor materials for thin film transistors

Publications (2)

Publication Number Publication Date
JP2009514223A true JP2009514223A (ja) 2009-04-02
JP2009514223A5 JP2009514223A5 (enExample) 2010-12-16

Family

ID=37882142

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2008537779A Pending JP2009514223A (ja) 2005-10-31 2006-10-16 薄膜トランジスタのためのｎ型半導体材料

Country Status (6)

Country Link
US (2) US7629605B2 (enExample)
EP (1) EP1943691A2 (enExample)
JP (1) JP2009514223A (enExample)
KR (1) KR20080063803A (enExample)
TW (1) TW200729571A (enExample)
WO (1) WO2007053303A2 (enExample)

Families Citing this family (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4921982B2 (ja) * 2004-01-26 2012-04-25 ノースウエスタン ユニバーシティ ペリレンｎ型半導体及び関連装置
US7629605B2 (en) * 2005-10-31 2009-12-08 Eastman Kodak Company N-type semiconductor materials for thin film transistors
US7422777B2 (en) * 2005-11-22 2008-09-09 Eastman Kodak Company N,N′-dicycloalkyl-substituted naphthalene-based tetracarboxylic diimide compounds as n-type semiconductor materials for thin film transistors
WO2007146250A2 (en) * 2006-06-12 2007-12-21 Northwestern University Naphthalene-based semiconductor materials and methods of preparing and use thereof
WO2008051552A2 (en) * 2006-10-25 2008-05-02 Northwestern University Organic semiconductor materials and methods of preparing and use thereof
WO2008063609A2 (en) 2006-11-17 2008-05-29 Polyera Corporation Diimide-based semiconductor materials and methods of preparing and using the same
EP2104676A2 (en) * 2007-01-08 2009-09-30 Polyera Corporation Methods for preparing arene-bis(dicarboximide)-based semiconducting materials and related intermediates for preparing same
US8022214B2 (en) * 2007-01-24 2011-09-20 Polyera Corporation Organic semiconductor materials and precursors thereof
WO2009089283A2 (en) * 2008-01-07 2009-07-16 The Johns Hopkins University Low-voltage, n-channel hybrid transistors
US7649199B2 (en) * 2008-04-11 2010-01-19 Eastman Kodak Company N-type semiconductor materials in thin film transistors and electronic devices
US20110079773A1 (en) * 2009-08-21 2011-04-07 Wasielewski Michael R Selectively Functionalized Rylene Imides and Diimides
US8530270B2 (en) 2010-04-30 2013-09-10 Eastman Kodak Company Methods of preparing semiconductive compositions and devices
US20110269966A1 (en) 2010-04-30 2011-11-03 Deepak Shukla Semiconducting articles
US8411489B2 (en) 2010-04-30 2013-04-02 Eastman Kodak Company Semiconducting devices and methods of preparing
US8314265B2 (en) 2010-04-30 2012-11-20 Eastman Kodak Company Aromatic amic acids or amic esters and compositions
US8404892B2 (en) 2010-05-27 2013-03-26 Eastman Kodak Company Aromatic amic acid salts and compositions
US8692238B2 (en) 2012-04-25 2014-04-08 Eastman Kodak Company Semiconductor devices and methods of preparation
US8779415B2 (en) 2012-11-08 2014-07-15 Eastman Kodak Company Devices containing organic polymeric multi-metallic composites
KR101490104B1 (ko) * 2013-06-12 2015-03-25 경상대학교산학협력단 나프탈렌 다이이미드 유도체 화합물 및 제조방법과 이를 포함하는 유기전자소자
WO2015191293A1 (en) 2014-06-11 2015-12-17 Eastman Kodak Company Devices having dielectric layers with thiosulfate-containing polymers
KR102330698B1 (ko) * 2015-09-04 2021-11-23 삼성전자주식회사 유기 광전 소자 및 이미지 센서

Citations (1)

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Publication number Priority date Publication date Assignee Title
US4468444A (en) * 1983-04-21 1984-08-28 Eastman Kodak Company Pyrylium-sensitized leuco base photoconductive compositions and elements containing naphthalene bis-dicarboximide compounds

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DE2951349A1 (de) 1979-12-20 1981-07-02 Bayer Ag, 5090 Leverkusen Naphthalintetracarbonsaeurediimide als elektrische halbleiter und photoleiter
US4442193A (en) * 1983-02-22 1984-04-10 Eastman Kodak Company Photoconductive compositions and elements containing naphthalene bis-dicarboximide compounds
EP0769532B1 (de) * 1995-10-12 2002-03-13 Ciba SC Holding AG Naphthalinlactamimid-Fluoreszenzfarbstoffe
JP3373783B2 (ja) 1998-05-29 2003-02-04 京セラミタ株式会社 ナフタレンテトラカルボン酸ジイミド誘導体及び電子写真用感光体
JP3559173B2 (ja) * 1998-07-01 2004-08-25 京セラミタ株式会社 負帯電単層型電子写真感光体
JP2000113504A (ja) * 1998-10-05 2000-04-21 Mitsui Chemicals Inc 光記録媒体
US6387727B1 (en) 1999-03-29 2002-05-14 Agere Systems Guardian Corp. Device comprising n-channel semiconductor material
DE20021356U1 (de) 2000-12-18 2001-02-22 Basf Ag, 67063 Ludwigshafen Polyvinylchlorid mit kernhydrierten Phthalat-Weichmachern
EP1237017A1 (en) * 2001-02-20 2002-09-04 Fuji Photo Film Co., Ltd. Polarizing plate protection film
US6844033B2 (en) * 2001-03-01 2005-01-18 Konica Corporation Cellulose ester film, its manufacturing method, polarizing plate, and liquid crystal display
JP4792677B2 (ja) * 2001-04-25 2011-10-12 コニカミノルタホールディングス株式会社 セルロースエステルフィルム
US6977275B2 (en) 2002-01-16 2005-12-20 Eastman Chemical Company Carbohydrate esters and polyol esters as plasticizers for polymers, compositions and articles including such plasticizers and methods of using the same
EP1434282A3 (en) * 2002-12-26 2007-06-27 Konica Minolta Holdings, Inc. Protective layer for an organic thin-film transistor
WO2005066718A1 (ja) * 2003-12-26 2005-07-21 Canon Kabushiki Kaisha 電子写真感光体、プロセスカートリッジおよび電子写真装置
JP4921982B2 (ja) * 2004-01-26 2012-04-25 ノースウエスタン ユニバーシティ ペリレンｎ型半導体及び関連装置
US7629605B2 (en) * 2005-10-31 2009-12-08 Eastman Kodak Company N-type semiconductor materials for thin film transistors

Patent Citations (1)

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Publication number Priority date Publication date Assignee Title
US4468444A (en) * 1983-04-21 1984-08-28 Eastman Kodak Company Pyrylium-sensitized leuco base photoconductive compositions and elements containing naphthalene bis-dicarboximide compounds

Also Published As

Publication number Publication date
KR20080063803A (ko) 2008-07-07
EP1943691A2 (en) 2008-07-16
TW200729571A (en) 2007-08-01
US20070096084A1 (en) 2007-05-03
WO2007053303A2 (en) 2007-05-10
WO2007053303A3 (en) 2007-06-21
US7807994B2 (en) 2010-10-05
US20090312553A1 (en) 2009-12-17
US7629605B2 (en) 2009-12-08

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