TWI256051B - Internal voltage generating circuit - Google Patents
Internal voltage generating circuitInfo
- Publication number
- TWI256051B TWI256051B TW093107515A TW93107515A TWI256051B TW I256051 B TWI256051 B TW I256051B TW 093107515 A TW093107515 A TW 093107515A TW 93107515 A TW93107515 A TW 93107515A TW I256051 B TWI256051 B TW I256051B
- Authority
- TW
- Taiwan
- Prior art keywords
- internal voltage
- driving signal
- generating circuit
- voltage generating
- response
- Prior art date
Links
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C5/00—Details of stores covered by group G11C11/00
- G11C5/14—Power supply arrangements, e.g. power down, chip selection or deselection, layout of wirings or power grids, or multiple supply levels
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C5/00—Details of stores covered by group G11C11/00
- G11C5/14—Power supply arrangements, e.g. power down, chip selection or deselection, layout of wirings or power grids, or multiple supply levels
- G11C5/147—Voltage reference generators, voltage or current regulators; Internally lowered supply levels; Compensation for voltage drops
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Dram (AREA)
- Continuous-Control Power Sources That Use Transistors (AREA)
- Static Random-Access Memory (AREA)
- Logic Circuits (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020030017598A KR100629258B1 (ko) | 2003-03-20 | 2003-03-20 | 내부 전압 발생회로 |
Publications (2)
Publication Number | Publication Date |
---|---|
TW200502969A TW200502969A (en) | 2005-01-16 |
TWI256051B true TWI256051B (en) | 2006-06-01 |
Family
ID=33297298
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW093107515A TWI256051B (en) | 2003-03-20 | 2004-03-19 | Internal voltage generating circuit |
Country Status (5)
Country | Link |
---|---|
US (1) | US7049881B2 (zh) |
JP (1) | JP4350568B2 (zh) |
KR (1) | KR100629258B1 (zh) |
DE (1) | DE102004014386A1 (zh) |
TW (1) | TWI256051B (zh) |
Families Citing this family (25)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2005229763A (ja) * | 2004-02-16 | 2005-08-25 | Nec Kansai Ltd | 昇圧回路 |
US7158423B2 (en) * | 2004-06-22 | 2007-01-02 | Samsung ′Electronics Co., Ltd. | Semiconductor memory device and array internal power voltage generating method thereof |
JP4354360B2 (ja) * | 2004-07-26 | 2009-10-28 | Okiセミコンダクタ株式会社 | 降圧電源装置 |
KR100645048B1 (ko) * | 2004-10-20 | 2006-11-10 | 삼성전자주식회사 | 반도체 메모리 장치에 사용되는 전압 레귤레이터 |
DE102005019955A1 (de) * | 2005-04-29 | 2006-11-02 | Infineon Technologies Ag | Variables Ansteuermodul zur Ansteuerung einer Last |
KR100702771B1 (ko) * | 2005-06-03 | 2007-04-03 | 주식회사 하이닉스반도체 | 안정적인 내부 전압을 발생하는 반도체 메모리 장치의 내부전압 발생 회로 |
KR100826974B1 (ko) * | 2005-12-29 | 2008-05-02 | 주식회사 하이닉스반도체 | 내부 전압 발생 회로 |
KR100816729B1 (ko) * | 2006-09-28 | 2008-03-25 | 주식회사 하이닉스반도체 | 코어전압 생성 장치 및 그를 포함하는 반도체 메모리 장치 |
JP4858140B2 (ja) * | 2006-12-12 | 2012-01-18 | ソニー株式会社 | バス用出力回路 |
KR100909355B1 (ko) * | 2007-01-08 | 2009-07-24 | 삼성전자주식회사 | 반도체 메모리 장치 및 그것의 오버 드라이빙 방법 |
KR100885489B1 (ko) * | 2007-03-05 | 2009-02-24 | 주식회사 하이닉스반도체 | 반도체장치의 내부전압 생성회로 및 그 내부전압 생성방법. |
JP2009118605A (ja) * | 2007-11-05 | 2009-05-28 | Toshiba Corp | 電圧発生回路 |
US8638160B2 (en) * | 2007-12-14 | 2014-01-28 | Fuji Electric Co., Ltd. | Integrated circuit and semiconductor device |
KR101442174B1 (ko) * | 2008-02-15 | 2014-09-18 | 삼성전자주식회사 | 반도체 메모리 장치 및 반도체 메모리 장치의 내부 전압발생 방법 |
KR100925394B1 (ko) * | 2008-09-25 | 2009-11-09 | 주식회사 하이닉스반도체 | 반도체 메모리 장치 |
KR100984228B1 (ko) * | 2008-11-14 | 2010-09-28 | 주식회사 하이닉스반도체 | 전압 강하 변환기 |
KR101541706B1 (ko) | 2009-01-19 | 2015-08-05 | 삼성전자주식회사 | 온도 감지 발진 회로 및 이를 포함하는 반도체 메모리 장치 |
KR20100089547A (ko) | 2009-02-04 | 2010-08-12 | 삼성전자주식회사 | 내부 전압을 발생하는 반도체 장치 및 그 장치를 포함하는 메모리 시스템 장치 |
KR101020294B1 (ko) | 2009-03-26 | 2011-03-07 | 주식회사 하이닉스반도체 | 내부전압 생성회로 |
KR20110024912A (ko) | 2009-09-03 | 2011-03-09 | 삼성전자주식회사 | 내부 전압 발생 회로 및 그를 이용한 반도체 메모리 장치 |
KR101094383B1 (ko) * | 2009-12-14 | 2011-12-15 | 주식회사 하이닉스반도체 | 내부전압 발생기 |
JP2011238103A (ja) * | 2010-05-12 | 2011-11-24 | Renesas Electronics Corp | 電源回路 |
US9317051B2 (en) * | 2014-02-06 | 2016-04-19 | SK Hynix Inc. | Internal voltage generation circuits |
JP6522201B1 (ja) * | 2018-05-14 | 2019-05-29 | ウィンボンド エレクトロニクス コーポレーション | 半導体装置 |
CN108829174B (zh) * | 2018-09-29 | 2020-06-05 | 上海华虹宏力半导体制造有限公司 | 线性稳压器电路 |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS60176121A (ja) * | 1984-02-22 | 1985-09-10 | Toshiba Corp | 電圧降下回路 |
US5721485A (en) * | 1996-01-04 | 1998-02-24 | Ibm Corporation | High performance on-chip voltage regulator designs |
JP3709246B2 (ja) * | 1996-08-27 | 2005-10-26 | 株式会社日立製作所 | 半導体集積回路 |
JPH11231954A (ja) * | 1998-02-16 | 1999-08-27 | Mitsubishi Electric Corp | 内部電源電圧発生回路 |
FR2820904B1 (fr) * | 2001-02-09 | 2003-06-13 | Atmel Nantes Sa | Dispositif generateur d'une tension de reference precise |
-
2003
- 2003-03-20 KR KR1020030017598A patent/KR100629258B1/ko active IP Right Grant
-
2004
- 2004-03-09 US US10/799,023 patent/US7049881B2/en not_active Expired - Lifetime
- 2004-03-18 DE DE102004014386A patent/DE102004014386A1/de not_active Withdrawn
- 2004-03-19 TW TW093107515A patent/TWI256051B/zh not_active IP Right Cessation
- 2004-03-19 JP JP2004080134A patent/JP4350568B2/ja not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
JP4350568B2 (ja) | 2009-10-21 |
JP2004288190A (ja) | 2004-10-14 |
KR100629258B1 (ko) | 2006-09-29 |
US20040217804A1 (en) | 2004-11-04 |
KR20040082894A (ko) | 2004-09-30 |
US7049881B2 (en) | 2006-05-23 |
TW200502969A (en) | 2005-01-16 |
DE102004014386A1 (de) | 2004-11-25 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
MM4A | Annulment or lapse of patent due to non-payment of fees |