TWI245805B - Thin film aluminum alloy and sputtering target to form the same - Google Patents

Thin film aluminum alloy and sputtering target to form the same Download PDF

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Publication number
TWI245805B
TWI245805B TW091119708A TW91119708A TWI245805B TW I245805 B TWI245805 B TW I245805B TW 091119708 A TW091119708 A TW 091119708A TW 91119708 A TW91119708 A TW 91119708A TW I245805 B TWI245805 B TW I245805B
Authority
TW
Taiwan
Prior art keywords
aluminum alloy
film
thin film
alloy
hardness
Prior art date
Application number
TW091119708A
Other languages
English (en)
Chinese (zh)
Inventor
Junichiro Hagiwara
Ichiro Tokuda
Original Assignee
Ulvac Materials Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ulvac Materials Inc filed Critical Ulvac Materials Inc
Application granted granted Critical
Publication of TWI245805B publication Critical patent/TWI245805B/zh

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/40—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials
    • H10P14/42—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials using a gas or vapour
    • H10P14/44—Physical vapour deposition [PVD]
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22F—CHANGING THE PHYSICAL STRUCTURE OF NON-FERROUS METALS AND NON-FERROUS ALLOYS
    • C22F1/00—Changing the physical structure of non-ferrous metals or alloys by heat treatment or by hot or cold working
    • C22F1/04—Changing the physical structure of non-ferrous metals or alloys by heat treatment or by hot or cold working of aluminium or alloys based thereon
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/14—Metallic material, boron or silicon
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
    • C23C14/3414—Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/40—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
    • H10W20/41—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes characterised by their conductive parts
    • H10W20/44—Conductive materials thereof
    • H10W20/4403—Conductive materials thereof based on metals, e.g. alloys, metal silicides
    • H10W20/4405—Conductive materials thereof based on metals, e.g. alloys, metal silicides the principal metal being aluminium
    • H10W20/4407—Aluminium alloys
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/60—Insulating or insulated package substrates; Interposers; Redistribution layers
    • H10W70/62—Insulating or insulated package substrates; Interposers; Redistribution layers characterised by their interconnections
    • H10W70/66—Conductive materials thereof
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/136286—Wiring, e.g. gate line, drain line
    • G02F1/136295—Materials; Compositions; Manufacture processes

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Physics & Mathematics (AREA)
  • Thermal Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Physical Vapour Deposition (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Liquid Crystal (AREA)
TW091119708A 2001-08-31 2002-08-29 Thin film aluminum alloy and sputtering target to form the same TWI245805B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2001263085A JP4783525B2 (ja) 2001-08-31 2001-08-31 薄膜アルミニウム合金及び薄膜アルミニウム合金形成用スパッタリングターゲット

Publications (1)

Publication Number Publication Date
TWI245805B true TWI245805B (en) 2005-12-21

Family

ID=19089896

Family Applications (2)

Application Number Title Priority Date Filing Date
TW091119708A TWI245805B (en) 2001-08-31 2002-08-29 Thin film aluminum alloy and sputtering target to form the same
TW093132008A TWI245806B (en) 2001-08-31 2002-08-29 Thin film aluminum alloy and sputtering target to form the same

Family Applications After (1)

Application Number Title Priority Date Filing Date
TW093132008A TWI245806B (en) 2001-08-31 2002-08-29 Thin film aluminum alloy and sputtering target to form the same

Country Status (3)

Country Link
US (1) US6791188B2 (https=)
JP (1) JP4783525B2 (https=)
TW (2) TWI245805B (https=)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7385293B2 (en) 2004-09-27 2008-06-10 Kobe Steel, Ltd. Copper alloy, fabrication method thereof, and sputtering target
CN107768348A (zh) * 2017-09-25 2018-03-06 江苏时瑞电子科技有限公司 一种用于铜互联的导电阻挡层材料及其制备方法

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JP3940385B2 (ja) * 2002-12-19 2007-07-04 株式会社神戸製鋼所 表示デバイスおよびその製法
JP2005086118A (ja) * 2003-09-11 2005-03-31 Renesas Technology Corp 半導体装置
ATE382188T1 (de) * 2003-10-31 2008-01-15 Nxp Bv Mikroelektromechanische hochfrequenz-systeme und verfahren zur herstellung solcher systeme
JP4390260B2 (ja) * 2004-02-16 2009-12-24 三井金属鉱業株式会社 高耐熱性アルミニウム合金配線材料及びターゲット材
US20060081465A1 (en) * 2004-10-19 2006-04-20 Kobelco Research Institute, Inc. Assembly for sputtering aluminum-neodymium alloys
JP4330517B2 (ja) * 2004-11-02 2009-09-16 株式会社神戸製鋼所 Ｃｕ合金薄膜およびＣｕ合金スパッタリングターゲット並びにフラットパネルディスプレイ
JP2006240289A (ja) * 2005-02-07 2006-09-14 Kobe Steel Ltd 光情報記録媒体用記録膜および光情報記録媒体ならびにスパッタリングターゲット
JP4117001B2 (ja) * 2005-02-17 2008-07-09 株式会社神戸製鋼所 薄膜トランジスタ基板、表示デバイス、および表示デバイス用のスパッタリングターゲット
CN100511687C (zh) * 2005-02-17 2009-07-08 株式会社神户制钢所 显示器和用于制备该显示器的溅射靶
JP2007072427A (ja) * 2005-03-10 2007-03-22 Mitsubishi Materials Corp 耐腐食性に優れた反射板用反射膜およびこの耐腐食性に優れた反射板用反射膜を形成するためのスパッタリングターゲット
JP4621989B2 (ja) * 2005-03-10 2011-02-02 三菱マテリアル株式会社 耐腐食性に優れた反射板用反射膜およびこの耐腐食性に優れた反射板用反射膜を形成するためのスパッタリングターゲット
JP4542008B2 (ja) * 2005-06-07 2010-09-08 株式会社神戸製鋼所 表示デバイス
US7683370B2 (en) 2005-08-17 2010-03-23 Kobe Steel, Ltd. Source/drain electrodes, transistor substrates and manufacture methods, thereof, and display devices
US7411298B2 (en) * 2005-08-17 2008-08-12 Kabushiki Kaisha Kobe Seiko Sho (Kobe Steel, Ltd.) Source/drain electrodes, thin-film transistor substrates, manufacture methods thereof, and display devices
JP4117002B2 (ja) * 2005-12-02 2008-07-09 株式会社神戸製鋼所 薄膜トランジスタ基板および表示デバイス
JP4559490B2 (ja) * 2005-12-22 2010-10-06 パイオニア株式会社 光記録媒体
WO2007102988A2 (en) * 2006-03-06 2007-09-13 Tosoh Smd, Inc. Electronic device, method of manufacture of same and sputtering target
WO2007103014A2 (en) * 2006-03-06 2007-09-13 Tosoh Smd, Inc. Sputtering target
US20070251819A1 (en) * 2006-05-01 2007-11-01 Kardokus Janine K Hollow cathode magnetron sputtering targets and methods of forming hollow cathode magnetron sputtering targets
US7781767B2 (en) 2006-05-31 2010-08-24 Kobe Steel, Ltd. Thin film transistor substrate and display device
JP2008098611A (ja) * 2006-09-15 2008-04-24 Kobe Steel Ltd 表示装置
JP4280277B2 (ja) * 2006-09-28 2009-06-17 株式会社神戸製鋼所 表示デバイスの製法
CN101523612B (zh) 2006-10-13 2011-07-06 株式会社神户制钢所 薄膜晶体管基板及显示器件
JP2008127623A (ja) * 2006-11-20 2008-06-05 Kobelco Kaken:Kk Ａｌ基合金スパッタリングターゲットおよびその製造方法
JP4377906B2 (ja) * 2006-11-20 2009-12-02 株式会社コベルコ科研 Ａｌ−Ｎｉ−Ｌａ系Ａｌ基合金スパッタリングターゲット、およびその製造方法
JP4170367B2 (ja) 2006-11-30 2008-10-22 株式会社神戸製鋼所 表示デバイス用Ａｌ合金膜、表示デバイス、及びスパッタリングターゲット
JP4355743B2 (ja) * 2006-12-04 2009-11-04 株式会社神戸製鋼所 Ｃｕ合金配線膜とそのＣｕ合金配線膜を用いたフラットパネルディスプレイ用ＴＦＴ素子、及びそのＣｕ合金配線膜を作製するためのＣｕ合金スパッタリングターゲット
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Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7385293B2 (en) 2004-09-27 2008-06-10 Kobe Steel, Ltd. Copper alloy, fabrication method thereof, and sputtering target
CN107768348A (zh) * 2017-09-25 2018-03-06 江苏时瑞电子科技有限公司 一种用于铜互联的导电阻挡层材料及其制备方法
CN107768348B (zh) * 2017-09-25 2019-07-12 江苏时恒电子科技有限公司 一种用于铜互联的导电阻挡层材料及其制备方法

Also Published As

Publication number Publication date
TWI245806B (en) 2005-12-21
US20030047812A1 (en) 2003-03-13
US6791188B2 (en) 2004-09-14
JP2003073810A (ja) 2003-03-12
TW200504231A (en) 2005-02-01
JP4783525B2 (ja) 2011-09-28

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