TWI240959B - Mechanical enhancement of dense and porous organosilicate materials by UV exposure - Google Patents
Mechanical enhancement of dense and porous organosilicate materials by UV exposure Download PDFInfo
- Publication number
- TWI240959B TWI240959B TW093105331A TW93105331A TWI240959B TW I240959 B TWI240959 B TW I240959B TW 093105331 A TW093105331 A TW 093105331A TW 93105331 A TW93105331 A TW 93105331A TW I240959 B TWI240959 B TW I240959B
- Authority
- TW
- Taiwan
- Prior art keywords
- film
- organic
- deposition
- exposure
- patent application
- Prior art date
Links
Classifications
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- H10P14/6922—
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- E—FIXED CONSTRUCTIONS
- E21—EARTH OR ROCK DRILLING; MINING
- E21B—EARTH OR ROCK DRILLING; OBTAINING OIL, GAS, WATER, SOLUBLE OR MELTABLE MATERIALS OR A SLURRY OF MINERALS FROM WELLS
- E21B4/00—Drives for drilling, used in the borehole
- E21B4/06—Down-hole impacting means, e.g. hammers
- E21B4/14—Fluid operated hammers
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/40—Oxides
- C23C16/401—Oxides containing silicon
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/56—After-treatment
-
- H10P14/6336—
-
- H10P14/6538—
-
- H10P14/665—
-
- H10P14/6682—
-
- H10P14/6686—
-
- H10P95/00—
-
- E—FIXED CONSTRUCTIONS
- E21—EARTH OR ROCK DRILLING; MINING
- E21B—EARTH OR ROCK DRILLING; OBTAINING OIL, GAS, WATER, SOLUBLE OR MELTABLE MATERIALS OR A SLURRY OF MINERALS FROM WELLS
- E21B33/00—Sealing or packing boreholes or wells
- E21B33/10—Sealing or packing boreholes or wells in the borehole
- E21B33/13—Methods or devices for cementing, for plugging holes, crevices or the like
- E21B33/138—Plastering the borehole wall; Injecting into the formation
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Organic Chemistry (AREA)
- General Chemical & Material Sciences (AREA)
- Metallurgy (AREA)
- Geology (AREA)
- Mining & Mineral Resources (AREA)
- Materials Engineering (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Life Sciences & Earth Sciences (AREA)
- General Life Sciences & Earth Sciences (AREA)
- Geochemistry & Mineralogy (AREA)
- Environmental & Geological Engineering (AREA)
- Fluid Mechanics (AREA)
- Physics & Mathematics (AREA)
- Inorganic Chemistry (AREA)
- Formation Of Insulating Films (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Chemical Vapour Deposition (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US10/379,466 US7098149B2 (en) | 2003-03-04 | 2003-03-04 | Mechanical enhancement of dense and porous organosilicate materials by UV exposure |
| US10/624,357 US7468290B2 (en) | 2003-03-04 | 2003-07-21 | Mechanical enhancement of dense and porous organosilicate materials by UV exposure |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW200428494A TW200428494A (en) | 2004-12-16 |
| TWI240959B true TWI240959B (en) | 2005-10-01 |
Family
ID=32775665
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW093105331A TWI240959B (en) | 2003-03-04 | 2004-03-01 | Mechanical enhancement of dense and porous organosilicate materials by UV exposure |
Country Status (5)
| Country | Link |
|---|---|
| EP (2) | EP1457583B8 (enExample) |
| JP (1) | JP2004274052A (enExample) |
| KR (1) | KR100637093B1 (enExample) |
| CN (1) | CN100543947C (enExample) |
| TW (1) | TWI240959B (enExample) |
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| US7332445B2 (en) * | 2004-09-28 | 2008-02-19 | Air Products And Chemicals, Inc. | Porous low dielectric constant compositions and methods for making and using same |
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| US7041748B2 (en) | 2003-01-08 | 2006-05-09 | International Business Machines Corporation | Patternable low dielectric constant materials and their use in ULSI interconnection |
| JP4651076B2 (ja) * | 2003-01-24 | 2011-03-16 | 日本エー・エス・エム株式会社 | 半導体基板上の絶縁膜の形成方法 |
| US7288292B2 (en) | 2003-03-18 | 2007-10-30 | International Business Machines Corporation | Ultra low k (ULK) SiCOH film and method |
| US20040197474A1 (en) * | 2003-04-01 | 2004-10-07 | Vrtis Raymond Nicholas | Method for enhancing deposition rate of chemical vapor deposition films |
| JP4344841B2 (ja) | 2003-05-30 | 2009-10-14 | 独立行政法人産業技術総合研究所 | 低誘電率絶縁膜の形成方法 |
| KR100554157B1 (ko) | 2003-08-21 | 2006-02-22 | 학교법인 포항공과대학교 | 저유전 특성의 유기 실리케이트 고분자 복합체 |
| US20050048795A1 (en) | 2003-08-27 | 2005-03-03 | Chung-Chi Ko | Method for ultra low-K dielectric deposition |
-
2004
- 2004-03-01 TW TW093105331A patent/TWI240959B/zh not_active IP Right Cessation
- 2004-03-02 EP EP04004877.9A patent/EP1457583B8/en not_active Expired - Lifetime
- 2004-03-02 EP EP17167460.9A patent/EP3231892B1/en not_active Expired - Lifetime
- 2004-03-03 JP JP2004059560A patent/JP2004274052A/ja not_active Withdrawn
- 2004-03-04 CN CNB2004100326587A patent/CN100543947C/zh not_active Expired - Lifetime
- 2004-03-04 KR KR1020040014731A patent/KR100637093B1/ko not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| KR20040078603A (ko) | 2004-09-10 |
| CN1527366A (zh) | 2004-09-08 |
| TW200428494A (en) | 2004-12-16 |
| KR100637093B1 (ko) | 2006-10-23 |
| EP1457583A3 (en) | 2010-02-17 |
| EP1457583A2 (en) | 2004-09-15 |
| CN100543947C (zh) | 2009-09-23 |
| JP2004274052A (ja) | 2004-09-30 |
| EP3231892B1 (en) | 2020-08-05 |
| EP1457583B1 (en) | 2017-05-31 |
| EP3231892A1 (en) | 2017-10-18 |
| EP1457583B8 (en) | 2017-10-11 |
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